Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72934) > Сторінка 1212 з 1216
| Фото | Назва | Виробник | Інформація |
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| ZXMN6A25GTA | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 6.7A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.7A Power dissipation: 2W Case: SOT223 On-state resistance: 50mΩ Mounting: SMD Gate charge: 11nC |
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GBU608 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
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ZXTN25012EZTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 6.5A Case: SOT89 Current gain: 30...1500 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 260MHz |
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| ZXTN25012EFLTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 2A; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 2A Case: SOT23 Mounting: SMD Frequency: 260MHz Pulsed collector current: 12A Power dissipation: 0.35W |
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| 74AHC32S14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Technology: CMOS Case: SO14 Mounting: SMD Kind of input: with Schmitt trigger Kind of gate: OR Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Operating temperature: -40...150°C Number of inputs: 2 Supply voltage: 2...5.5V DC Family: AHC |
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| 74AHC32T14-13 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Technology: CMOS Case: TSSOP14 Mounting: SMD Kind of input: with Schmitt trigger Kind of gate: OR Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Operating temperature: -40...150°C Number of inputs: 2 Supply voltage: 2...5.5V DC Family: AHC |
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| KBP406G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 130A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 130A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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| BZT52C3V6LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 3.6V; SMD; X1-DFN1006-2; reel,tape Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5.5% Case: X1-DFN1006-2 Kind of package: reel; tape Semiconductor structure: single diode |
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| BZT52C3V6Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.37W; 3.6V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 3.6V Mounting: SMD Tolerance: ±6% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
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74LVC1G97DW-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOT363 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Number of channels: 1 Kind of integrated circuit: buffer; inverter; multiplexer |
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| 74LVC1G97FW4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Number of channels: 1 Kind of integrated circuit: buffer; inverter; multiplexer |
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| 74LVC1G97FZ4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Number of channels: 1 Kind of integrated circuit: buffer; inverter; multiplexer |
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74LVC1G97W6-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOT26 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Kind of output: push-pull Number of channels: 1 Kind of integrated circuit: buffer; inverter; multiplexer |
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| SMAJ12CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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DMP3036SSD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -8.5A Gate charge: 16.5nC On-state resistance: 29mΩ Power dissipation: 1.1W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape |
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DMP3028LSD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -30V Drain current: -5.8A Gate charge: 22nC On-state resistance: 38mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
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DMP3048LSD-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -35A Drain-source voltage: -30V Drain current: -3.8A Gate charge: 29.6nC On-state resistance: 80mΩ Power dissipation: 1.7W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
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DMP3056LSDQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8 Mounting: SMD Case: SO8 Application: automotive industry Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -30V Drain current: -5.8A Gate charge: 13.7nC On-state resistance: 65mΩ Power dissipation: 2.5W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
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| ZXT951KTC | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 6A; 4.2W; TO252-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 4.2W Case: TO252-3 Mounting: SMD Frequency: 120MHz |
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AS324MTR-G1 | DIODES INCORPORATED |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 2mV; reel,tape Type of integrated circuit: operational amplifier Case: SO14 Number of channels: 4 Mounting: SMT Operating temperature: -40...85°C Kind of package: reel; tape Input offset voltage: 2mV Power dissipation: 0.8W Voltage supply range: 3...36V DC Integrated circuit features: low power |
на замовлення 1278 шт: термін постачання 14-30 дні (днів) |
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DMP3028LK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252 Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -22A Pulsed drain current: -40A Gate-source voltage: ±20V On-state resistance: 25mΩ Power dissipation: 1.6W Kind of package: 13 inch reel; tape Case: TO252 Kind of channel: enhancement |
на замовлення 1396 шт: термін постачання 14-30 дні (днів) |
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DMP3008SFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8 Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.1A Gate-source voltage: ±20V On-state resistance: 25mΩ Power dissipation: 0.9W Kind of package: 7 inch reel; tape Application: automotive industry Case: PowerDI®3333-8 Kind of channel: enhancement |
на замовлення 3220 шт: термін постачання 14-30 дні (днів) |
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SDT20A120CT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 120V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward voltage: 0.79V Max. forward impulse current: 150A |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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| DT2042-04TS-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 5.5V Semiconductor structure: unidirectional Case: TSOT26 Kind of package: reel; tape Capacitance: 1.5pF Leakage current: 1µA Number of channels: 4 Breakdown voltage: 6V Max. forward impulse current: 10A Application: HDMI |
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| DT2042-04SO-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 5.5V Semiconductor structure: unidirectional Case: SOT23-6 Kind of package: reel; tape Capacitance: 1.5pF Leakage current: 1µA Number of channels: 4 Breakdown voltage: 6V Max. forward impulse current: 10A |
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| SDT20B100D1-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 20A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Leakage current: 16mA Max. forward voltage: 0.82V Max. forward impulse current: 100A |
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| SDT20A100CT | DIODES INCORPORATED |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Leakage current: 20mA Max. forward voltage: 0.67V Max. forward impulse current: 200A |
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DMN2053U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.4A Pulsed drain current: 22A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 91mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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DMMT5551S-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.2A Power dissipation: 0.3W Case: SOT26 Current gain: 50...250 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100...300MHz |
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AP7313-15SAG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.5V Output current: 0.15A Case: SOT23 Mounting: SMD Manufacturer series: AP7313 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V |
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| ZXRE160FT4-7 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: SMD Case: DFN1520-6 Operating temperature: -40...125°C Operating voltage: 0.6...18V Kind of package: reel; tape Maximum output current: 15mA |
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| ZXRE160AH5TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; ±0.5%; SC70-5 Type of integrated circuit: voltage reference source Tolerance: ±0.5% Mounting: SMD Case: SC70-5 Operating temperature: -40...125°C |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| ZXRE160ET5TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; ±1%; SOT25 Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: SMD Case: SOT25 Operating temperature: -40...125°C |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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| MMBZ5257B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
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| MMBZ5257BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
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| MMBZ5257BT-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT523 Kind of package: reel; tape Semiconductor structure: single diode |
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| MMBZ5257BTS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 33V; SMD; SOT363; reel,tape; triple independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOT363 Kind of package: reel; tape Semiconductor structure: triple independent |
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DDTA123ECA-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 20 Quantity in set/package: 3000pcs. Frequency: 250MHz |
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| DDTA123EE-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 20 Quantity in set/package: 3000pcs. Frequency: 250MHz |
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SMAJ75A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 3.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 5009 шт: термін постачання 14-30 дні (днів) |
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SMAJ75CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 3.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| P6SMAJ75ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| P6SMAJ75ADFQ-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
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| DMN1054UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W Case: X1-WLB0808-4 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15nC On-state resistance: 0.11Ω Drain current: 3.2A Power dissipation: 1.34W Gate-source voltage: ±5V Pulsed drain current: 8A Drain-source voltage: 8V Kind of channel: enhancement |
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| T5V0DLP-7B | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array Type of diode: TVS array Mounting: SMD |
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DF005S-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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| 74LVC2G06FX4-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 2 Technology: CMOS Mounting: SMD Case: X2-DFN1409-6 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: open drain Supply voltage: 1.65...5.5V DC Family: LVC |
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| 74LVC2G06FZ4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 2 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: open drain Supply voltage: 1.65...5.5V DC Family: LVC |
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74LVC2G06W6-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, drivers Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; -40÷150°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 2 Technology: CMOS Mounting: SMD Case: SOT26 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: open drain Supply voltage: 1.65...5.5V DC Family: LVC |
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| D3V3XA4B10LP-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array Type of diode: TVS array Mounting: SMD |
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| D3V3XA4B10LP-7 | DIODES INCORPORATED |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; 0.024kW; bidirectional; ESD; U-DFN2510-10 Type of diode: TVS array Breakdown voltage: 5V Peak pulse power dissipation: 24W Semiconductor structure: bidirectional Version: ESD Mounting: SMD Case: U-DFN2510-10 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 4 Application: USB |
на замовлення 9000 шт: термін постачання 14-30 дні (днів) |
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BAW156TQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common anode; double Case: SOT523 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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KBJ601G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 170A Max. off-state voltage: 0.1kV Case: KBJ Kind of package: tube Leads: flat pin Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 6A Max. forward impulse current: 170A Version: flat |
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 |
DMN601WK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
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|
DMN601WKQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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|
DMN601WKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
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| DDZ12ASF-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD323F; reel,tape; single diode Mounting: SMD Semiconductor structure: single diode Zener voltage: 12V Kind of package: reel; tape Case: SOD323F Type of diode: Zener Power dissipation: 0.5W |
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| BC847PN-7R-F | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Polarisation: bipolar Kind of transistor: complementary pair Case: SOT363 Type of transistor: NPN / PNP Mounting: SMD Collector current: 0.1A Pulsed collector current: 0.2A Power dissipation: 0.2W Collector-emitter voltage: 45V Current gain: 200...450 Quantity in set/package: 3000pcs. Frequency: 100...300MHz Kind of package: reel; tape |
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| BC847PNQ-7-F | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Application: automotive industry Polarisation: bipolar Kind of transistor: complementary pair Case: SOT363 Type of transistor: NPN / PNP Mounting: SMD Collector current: 0.1A Pulsed collector current: 0.2A Power dissipation: 0.2W Collector-emitter voltage: 45V Current gain: 200...450 Quantity in set/package: 3000pcs. Frequency: 100...300MHz Kind of package: reel; tape |
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| BC847PNQ-7R-F | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Application: automotive industry Polarisation: bipolar Kind of transistor: complementary pair Case: SOT363 Type of transistor: NPN / PNP Mounting: SMD Collector current: 0.1A Pulsed collector current: 0.2A Power dissipation: 0.2W Collector-emitter voltage: 45V Current gain: 200...450 Quantity in set/package: 3000pcs. Frequency: 100...300MHz Kind of package: reel; tape |
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| ZXMN6A25GTA |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.7A
Power dissipation: 2W
Case: SOT223
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.7A
Power dissipation: 2W
Case: SOT223
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 11nC
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| GBU608 |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| ZXTN25012EZTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6.5A
Case: SOT89
Current gain: 30...1500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 260MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6.5A
Case: SOT89
Current gain: 30...1500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 260MHz
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| ZXTN25012EFLTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2A
Case: SOT23
Mounting: SMD
Frequency: 260MHz
Pulsed collector current: 12A
Power dissipation: 0.35W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2A
Case: SOT23
Mounting: SMD
Frequency: 260MHz
Pulsed collector current: 12A
Power dissipation: 0.35W
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| 74AHC32S14-13 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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| 74AHC32T14-13 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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| KBP406G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 130A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 130A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 130A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| BZT52C3V6LP-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.6V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.6V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5.5%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
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| BZT52C3V6Q-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.6V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| 74LVC1G97DW-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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| 74LVC1G97FW4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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| 74LVC1G97FZ4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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| 74LVC1G97W6-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer; Ch: 1; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
Number of channels: 1
Kind of integrated circuit: buffer; inverter; multiplexer
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| SMAJ12CAQ-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| DMP3036SSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -8.5A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 1.1W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -80A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -8.5A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 1.1W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
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| DMP3028LSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -5.8A
Gate charge: 22nC
On-state resistance: 38mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Drain current: -5.8A
Gate charge: 22nC
On-state resistance: 38mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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| DMP3048LSD-13 |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -35A
Drain-source voltage: -30V
Drain current: -3.8A
Gate charge: 29.6nC
On-state resistance: 80mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -35A; 1.7W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -35A
Drain-source voltage: -30V
Drain current: -3.8A
Gate charge: 29.6nC
On-state resistance: 80mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
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| DMP3056LSDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Mounting: SMD
Case: SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -30V
Drain current: -5.8A
Gate charge: 13.7nC
On-state resistance: 65mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -24A; 2.5W; SO8
Mounting: SMD
Case: SO8
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -30V
Drain current: -5.8A
Gate charge: 13.7nC
On-state resistance: 65mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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| ZXT951KTC |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 4.2W; TO252-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 4.2W
Case: TO252-3
Mounting: SMD
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 4.2W; TO252-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 4.2W
Case: TO252-3
Mounting: SMD
Frequency: 120MHz
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| AS324MTR-G1 |
|
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 2mV; reel,tape
Type of integrated circuit: operational amplifier
Case: SO14
Number of channels: 4
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Input offset voltage: 2mV
Power dissipation: 0.8W
Voltage supply range: 3...36V DC
Integrated circuit features: low power
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; 3÷36VDC; SO14; 2mV; reel,tape
Type of integrated circuit: operational amplifier
Case: SO14
Number of channels: 4
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Input offset voltage: 2mV
Power dissipation: 0.8W
Voltage supply range: 3...36V DC
Integrated circuit features: low power
на замовлення 1278 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.93 грн |
| 16+ | 27.43 грн |
| 20+ | 21.76 грн |
| 100+ | 10.33 грн |
| 500+ | 7.79 грн |
| 1000+ | 7.28 грн |
| DMP3028LK3-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -22A
Pulsed drain current: -40A
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Power dissipation: 1.6W
Kind of package: 13 inch reel; tape
Case: TO252
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -22A
Pulsed drain current: -40A
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Power dissipation: 1.6W
Kind of package: 13 inch reel; tape
Case: TO252
Kind of channel: enhancement
на замовлення 1396 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.43 грн |
| 12+ | 36.82 грн |
| 100+ | 23.96 грн |
| 500+ | 18.28 грн |
| 1000+ | 16.51 грн |
| DMP3008SFGQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Power dissipation: 0.9W
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI®3333-8
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Power dissipation: 0.9W
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI®3333-8
Kind of channel: enhancement
на замовлення 3220 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 100.28 грн |
| 10+ | 59.09 грн |
| 100+ | 43.51 грн |
| 500+ | 38.18 грн |
| SDT20A120CT |
|
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 10Ax2; TO220AB; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward voltage: 0.79V
Max. forward impulse current: 150A
на замовлення 47 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.05 грн |
| 12+ | 35.64 грн |
| DT2042-04TS-7 |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: TSOT26
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: HDMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: TSOT26
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Application: HDMI
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| DT2042-04SO-7 |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 10A; unidirectional; SOT23-6; Ch: 4; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Case: SOT23-6
Kind of package: reel; tape
Capacitance: 1.5pF
Leakage current: 1µA
Number of channels: 4
Breakdown voltage: 6V
Max. forward impulse current: 10A
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| SDT20B100D1-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Leakage current: 16mA
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Leakage current: 16mA
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
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| SDT20A100CT |
|
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Leakage current: 20mA
Max. forward voltage: 0.67V
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Leakage current: 20mA
Max. forward voltage: 0.67V
Max. forward impulse current: 200A
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| DMN2053U-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMMT5551S-7-F |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 160V; 0.2A; 300mW; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT26
Current gain: 50...250
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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| AP7313-15SAG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7313
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7313
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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| ZXRE160FT4-7 |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: DFN1520-6
Operating temperature: -40...125°C
Operating voltage: 0.6...18V
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; DFN1520-6; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: DFN1520-6
Operating temperature: -40...125°C
Operating voltage: 0.6...18V
Kind of package: reel; tape
Maximum output current: 15mA
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| ZXRE160AH5TA |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±0.5%; SC70-5
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SC70-5
Operating temperature: -40...125°C
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±0.5%; SC70-5
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SC70-5
Operating temperature: -40...125°C
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 27.17 грн |
| ZXRE160ET5TA |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT25
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT25
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.07 грн |
| MMBZ5257B-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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| MMBZ5257BQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 33V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| MMBZ5257BT-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.15W; 33V; SMD; SOT523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT523
Kind of package: reel; tape
Semiconductor structure: single diode
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| MMBZ5257BTS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 33V; SMD; SOT363; reel,tape; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 33V; SMD; SOT363; reel,tape; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
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| DDTA123ECA-7-F |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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| DDTA123EE-7-F |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 20
Quantity in set/package: 3000pcs.
Frequency: 250MHz
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| SMAJ75A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 5009 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.76 грн |
| 44+ | 9.65 грн |
| 50+ | 8.55 грн |
| 68+ | 6.30 грн |
| 100+ | 5.58 грн |
| 250+ | 4.83 грн |
| 500+ | 4.42 грн |
| 1000+ | 4.23 грн |
| SMAJ75CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3÷92.1V; 3.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 3.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| P6SMAJ75ADF-13 |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| P6SMAJ75ADFQ-13 |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷95.8V; 4.9A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| DMN1054UCB4-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Case: X1-WLB0808-4
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.11Ω
Drain current: 3.2A
Power dissipation: 1.34W
Gate-source voltage: ±5V
Pulsed drain current: 8A
Drain-source voltage: 8V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W
Case: X1-WLB0808-4
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.11Ω
Drain current: 3.2A
Power dissipation: 1.34W
Gate-source voltage: ±5V
Pulsed drain current: 8A
Drain-source voltage: 8V
Kind of channel: enhancement
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| T5V0DLP-7B |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
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| DF005S-T |
|
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| 74LVC2G06FX4-7 |
|
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
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| 74LVC2G06FZ4-7 |
|
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
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| 74LVC2G06W6-7 |
|
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; -40÷150°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Family: LVC
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| D3V3XA4B10LP-7 |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
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| D3V3XA4B10LP-7 |
|
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.024kW; bidirectional; ESD; U-DFN2510-10
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 24W
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Application: USB
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.024kW; bidirectional; ESD; U-DFN2510-10
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 24W
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Application: USB
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.65 грн |
| BAW156TQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common anode; double
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.82 грн |
| 22+ | 20.06 грн |
| 100+ | 10.07 грн |
| 500+ | 5.27 грн |
| 1000+ | 4.55 грн |
| KBJ601G |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 170A
Max. off-state voltage: 0.1kV
Case: KBJ
Kind of package: tube
Leads: flat pin
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 6A
Max. forward impulse current: 170A
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 170A
Max. off-state voltage: 0.1kV
Case: KBJ
Kind of package: tube
Leads: flat pin
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 6A
Max. forward impulse current: 170A
Version: flat
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| DMN601WK-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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| DMN601WKQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMN601WKQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 200mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DDZ12ASF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323F; reel,tape; single diode
Mounting: SMD
Semiconductor structure: single diode
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323F
Type of diode: Zener
Power dissipation: 0.5W
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323F; reel,tape; single diode
Mounting: SMD
Semiconductor structure: single diode
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD323F
Type of diode: Zener
Power dissipation: 0.5W
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| BC847PN-7R-F |
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Polarisation: bipolar
Kind of transistor: complementary pair
Case: SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Pulsed collector current: 0.2A
Power dissipation: 0.2W
Collector-emitter voltage: 45V
Current gain: 200...450
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Polarisation: bipolar
Kind of transistor: complementary pair
Case: SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Pulsed collector current: 0.2A
Power dissipation: 0.2W
Collector-emitter voltage: 45V
Current gain: 200...450
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
Kind of package: reel; tape
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| BC847PNQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Application: automotive industry
Polarisation: bipolar
Kind of transistor: complementary pair
Case: SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Pulsed collector current: 0.2A
Power dissipation: 0.2W
Collector-emitter voltage: 45V
Current gain: 200...450
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Application: automotive industry
Polarisation: bipolar
Kind of transistor: complementary pair
Case: SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Pulsed collector current: 0.2A
Power dissipation: 0.2W
Collector-emitter voltage: 45V
Current gain: 200...450
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
Kind of package: reel; tape
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| BC847PNQ-7R-F |
|
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Application: automotive industry
Polarisation: bipolar
Kind of transistor: complementary pair
Case: SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Pulsed collector current: 0.2A
Power dissipation: 0.2W
Collector-emitter voltage: 45V
Current gain: 200...450
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Application: automotive industry
Polarisation: bipolar
Kind of transistor: complementary pair
Case: SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Pulsed collector current: 0.2A
Power dissipation: 0.2W
Collector-emitter voltage: 45V
Current gain: 200...450
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
Kind of package: reel; tape
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