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AP1501A-50K5G-13 AP1501A-50K5G-13 DIODES INCORPORATED AP1501A-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 5VDC; 5A; TO263-5; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 5V DC
Output current: 5A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 78%
на замовлення 124 шт:
термін постачання 21-30 дні (днів)
2+358.43 грн
10+233.72 грн
25+214.73 грн
100+185.00 грн
Мінімальне замовлення: 2
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DT1240A-08LP3810-7 DIODES INCORPORATED DT1240A-08LP3810.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 5.5A; unidirectional; uDFN9; Ch: 8; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: uDFN9
Max. off-state voltage: 3.3V
Leakage current: 0.5µA
Number of channels: 8
Kind of package: reel; tape
Capacitance: 0.7pF
Application: HDMI; USB
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DT1240V3-04LP-7 DIODES INCORPORATED DT1240V3-04LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; unidirectional; DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 0.5µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
Application: HDMI
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DT1240-04LP-7 DIODES INCORPORATED DT1240-04LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 60W; unidirectional; U-DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 5.5V
Leakage current: 0.5µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
Application: HDMI; USB
Peak pulse power dissipation: 60W
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DT1240-08LP3810-7 DIODES INCORPORATED DT1240-08LP3810.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; unidirectional; uDFN9; Ch: 8; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: uDFN9
Max. off-state voltage: 5.5V
Leakage current: 0.5µA
Number of channels: 8
Kind of package: reel; tape
Capacitance: 0.6pF
Application: HDMI; USB
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DT1240-04LP20-7 DIODES INCORPORATED Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
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DT1240-04LPQ-7 DIODES INCORPORATED DT1240-04LPQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 60W; unidirectional; U-DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 5.5V
Leakage current: 0.5µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
Application: automotive industry; HDMI; USB
Peak pulse power dissipation: 60W
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DT1240A-04LP-7 DIODES INCORPORATED DT1240A-04LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 5.5A; unidirectional; DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
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DT1240A-04LPQ-7 DIODES INCORPORATED DT1240A-04LPQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 5.5A; unidirectional; DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
Application: automotive industry
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DT1240A-08LP3810Q-7 DIODES INCORPORATED DT1240A-08LP3810Q.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 5.5A; unidirectional; uDFN9; Ch: 8; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: uDFN9
Max. off-state voltage: 3.3V
Leakage current: 0.5µA
Number of channels: 8
Kind of package: reel; tape
Capacitance: 0.7pF
Application: automotive industry; HDMI; USB
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DT1240-04LP20-7 DIODES INCORPORATED Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 0.06kW; unidirectional; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5.5V
Leakage current: 0.5µA
Number of channels: 4
Application: HDMI; USB
Peak pulse power dissipation: 60W
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+5.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DT1240A-04LPQ-7 DIODES INCORPORATED DT1240A-04LPQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.052kW; U-DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 3.3V
Number of channels: 4
Application: HDMI; USB
Peak pulse power dissipation: 0.052kW
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+8.54 грн
Мінімальне замовлення: 3000
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1N4934-T 1N4934-T DIODES INCORPORATED 1N4934_37.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
на замовлення 495 шт:
термін постачання 21-30 дні (днів)
72+6.23 грн
84+4.96 грн
93+4.46 грн
130+3.19 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
AP9101CAK6-ANTRG1 AP9101CAK6-ANTRG1 DIODES INCORPORATED AP9101C.pdf Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; shutdown input; SOT26
Kind of integrated circuit: battery charging controller
Kind of package: reel; tape
Type of integrated circuit: PMIC
Mounting: SMD
Integrated circuit features: shutdown input
Case: SOT26
Operating temperature: -40...85°C
Supply voltage: 1.5...5.5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
на замовлення 175 шт:
термін постачання 21-30 дні (днів)
35+11.89 грн
100+10.57 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
AP9101CK6-AXTRG1 AP9101CK6-AXTRG1 DIODES INCORPORATED AP9101C.pdf Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; shutdown input; SOT26
Kind of integrated circuit: battery charging controller
Kind of package: reel; tape
Type of integrated circuit: PMIC
Mounting: SMD
Integrated circuit features: shutdown input
Case: SOT26
Operating temperature: -40...85°C
Supply voltage: 1.5...5.5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
на замовлення 400 шт:
термін постачання 21-30 дні (днів)
30+14.94 грн
35+12.31 грн
100+10.90 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
AP9211SA-AL-HAC-7 AP9211SA-AL-HAC-7 DIODES INCORPORATED AP9211.pdf Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Mounting: SMD
Number of rechargeable batteries: 1 x Li+
Case: U-DFN2030-6
Supply voltage: 1.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: MOSFET; shutdown input
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)
6+74.71 грн
25+40.72 грн
100+36.01 грн
500+32.37 грн
Мінімальне замовлення: 6
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74AUP1G04FW4-7 DIODES INCORPORATED 74AUP1G04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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US2JDF-13 DIODES INCORPORATED US2JDF.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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US2JDFQ-13 DIODES INCORPORATED US2JDFQ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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DMG1029SVQ-7 DMG1029SVQ-7 DIODES INCORPORATED DMG1029SV-7.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N/P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.4/-0.28A
On-state resistance: 1.7/4Ω
Power dissipation: 0.66W
Kind of transistor: complementary pair
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
Version: ESD
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DMG1023UVQ-13 DIODES INCORPORATED DMG1023UVQ.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; automotive industry
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Application: automotive industry
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DMG1023UVQ-7 DIODES INCORPORATED DMG1023UVQ.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -3A; 530mW
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -3A
Drain current: -680mA
Gate charge: 622pC
On-state resistance: 25Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of channel: enhancement
Application: automotive industry
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DMG1026UVQ-7 DIODES INCORPORATED DMG1026UVQ_NRND.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 1A
Drain current: 0.32A
Gate charge: 0.45pC
On-state resistance: 2.1Ω
Power dissipation: 0.65W
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
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ZXTD2090E6TA DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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DESD5V0S1BA-7 DESD5V0S1BA-7 DIODES INCORPORATED DESD5V0S1BA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Peak pulse power dissipation: 130W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Number of channels: 1
Kind of package: reel; tape
Leakage current: 0.1µA
на замовлення 943 шт:
термін постачання 21-30 дні (днів)
34+13.34 грн
45+9.25 грн
70+5.95 грн
100+4.83 грн
500+3.08 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
DESD5V0U1BA-7 DESD5V0U1BA-7 DIODES INCORPORATED DESD5V0U1BA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷9.5V; 3A; bidirectional; SOD323; reel,tape; Ch: 1
Type of diode: TVS
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Number of channels: 1
Kind of package: reel; tape
Leakage current: 0.1µA
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DESD5V0S1BB-7 DESD5V0S1BB-7 DIODES INCORPORATED DESD5V0S1BB.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD523; reel,tape
Type of diode: TVS
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Peak pulse power dissipation: 130W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 5V
Number of channels: 1
Kind of package: reel; tape
Leakage current: 0.1µA
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FMMTA42TA FMMTA42TA DIODES INCORPORATED FMMTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
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FMMTA42TA FMMTA42TA DIODES INCORPORATED FMMTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)
28+16.01 грн
33+12.55 грн
100+8.07 грн
500+5.78 грн
1000+5.10 грн
Мінімальне замовлення: 28
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FMMTA42QTA FMMTA42QTA DIODES INCORPORATED FMMTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
19+24.01 грн
26+16.27 грн
100+8.73 грн
Мінімальне замовлення: 19
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DMNH6008SPS-13 DIODES INCORPORATED DMNH6008SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 352A; 3.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Pulsed drain current: 352A
Power dissipation: 3.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 40.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMNH6008SPSQ-13 DIODES INCORPORATED DMNH6008SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 352A; 3.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Pulsed drain current: 352A
Power dissipation: 3.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 40.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2023UFDF-13 DIODES INCORPORATED DMP2023UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.6A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 27nC
Pulsed drain current: -40A
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DMP2023UFDF-7 DIODES INCORPORATED DMP2023UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ6.0CA-13-F SMBJ6.0CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 850 шт:
термін постачання 21-30 дні (днів)
28+16.01 грн
38+10.90 грн
43+9.83 грн
100+7.76 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
DMN3020UFDF-7 DIODES INCORPORATED DMN3020UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 0.12Ω
Power dissipation: 1.3W
Drain current: 8.3A
Pulsed drain current: 40A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN2320UFB4-7B DIODES INCORPORATED DMN2320UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 6A; 1.07W
Mounting: SMD
Case: X2-DFN1006-3
Polarisation: unipolar
Gate charge: 0.89nC
On-state resistance: 1Ω
Power dissipation: 1.07W
Drain current: 0.7A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN3020UFDF-13 DIODES INCORPORATED DMN3020UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 0.12Ω
Power dissipation: 1.3W
Drain current: 8.3A
Pulsed drain current: 40A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN2020UFCL-7 DIODES INCORPORATED DMN2020UFCL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 45A; 610mW
Mounting: SMD
Case: X1-DFN1616-6
Polarisation: unipolar
Gate charge: 21.5nC
On-state resistance: 26mΩ
Power dissipation: 0.61W
Drain current: 7.1A
Pulsed drain current: 45A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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BCR420UFDQ-7 DIODES INCORPORATED BCR420UFDQ-BCR421UFDQ.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Case: U-DFN2020-6
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Topology: single transistor
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BCR420UFD-7 DIODES INCORPORATED BCR420UFD.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Case: U-DFN2020-6
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Topology: single transistor
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ZXTN25060BFHTA DIODES INCORPORATED ZXTN25060BFH.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
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DMN3024SFG-13 DMN3024SFG-13 DIODES INCORPORATED DMN3024SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 60A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2018 шт:
термін постачання 21-30 дні (днів)
16+29.35 грн
18+23.87 грн
100+18.50 грн
500+15.28 грн
1000+14.29 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
74AHC125S14-13 74AHC125S14-13 DIODES INCORPORATED 74AHC125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: AHC
Case: SO14
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74HCT126S14-13 74HCT126S14-13 DIODES INCORPORATED 74HCT126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Manufacturer series: HCT
на замовлення 1100 шт:
термін постачання 21-30 дні (днів)
23+19.57 грн
28+15.03 грн
32+13.30 грн
36+11.48 грн
100+9.50 грн
250+8.75 грн
500+8.26 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
74HCT126T14-13 DIODES INCORPORATED 74HCT126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
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74AHC126S14-13 74AHC126S14-13 DIODES INCORPORATED 74AHC126.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: AHC
на замовлення 1506 шт:
термін постачання 21-30 дні (днів)
36+12.45 грн
50+8.34 грн
100+7.27 грн
500+6.52 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BC846BW-13-F BC846BW-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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MURS120-13-F MURS120-13-F DIODES INCORPORATED MURS120.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Capacitance: 27pF
на замовлення 1989 шт:
термін постачання 21-30 дні (днів)
20+22.24 грн
25+16.85 грн
28+15.20 грн
100+10.65 грн
500+8.01 грн
800+7.27 грн
1000+7.02 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
FMMT593TA FMMT593TA DIODES INCORPORATED FMMT593.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 1499 шт:
термін постачання 21-30 дні (днів)
13+36.47 грн
17+24.61 грн
50+16.85 грн
100+14.29 грн
500+10.08 грн
1000+8.92 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
FMMT593QTA DIODES INCORPORATED FMMT593.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Current gain: 50...300
Pulsed collector current: 2A
Application: automotive industry
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AP7363-18D-13 AP7363-18D-13 DIODES INCORPORATED AP7363.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.5A; DPAK; SMD
Kind of package: reel; tape
Manufacturer series: AP7363
Type of integrated circuit: voltage regulator
Case: DPAK
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 0.24V
Number of channels: 1
Output current: 1.5A
Output voltage: 1.8V
Input voltage: 2.2...5.5V
на замовлення 1928 шт:
термін постачання 21-30 дні (днів)
11+40.91 грн
14+30.56 грн
100+20.40 грн
250+17.26 грн
500+16.02 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MSB30M-13 DIODES INCORPORATED MSB30M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; MSBL
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: MSBL
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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MSB30KH-13 DIODES INCORPORATED MSB30KH.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 3A; Ifsm: 110A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 3A
Max. forward impulse current: 110A
Case: MSBL
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DMHT3006LFJ-13 DIODES INCORPORATED DMHT3006LFJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Case: V-DFN5045-12
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 80A
Drain current: 10A
Kind of package: 13 inch reel; tape
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AP1506-50K5G-13 AP1506-50K5G-13 DIODES INCORPORATED AP1506x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 5VDC; 3A; TO263-5; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...22V DC
Output voltage: 5V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 80%
на замовлення 464 шт:
термін постачання 21-30 дні (днів)
5+83.41 грн
25+75.98 грн
100+74.33 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AP1507-D5-13
+1
 		AP1507-D5-13 DIODES INCORPORATED AP1507x-DTE.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 1.23÷18VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...22V DC
Output voltage: 1.23...18V DC
Output current: 3A
Case: TO252-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 74%
на замовлення 142 шт:
термін постачання 21-30 дні (днів)
7+70.26 грн
10+47.24 грн
25+42.78 грн
100+37.33 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMP2016UFDF-7 DIODES INCORPORATED DMP2016UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
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ZUMTS17NTA DIODES INCORPORATED ZUMTS17N.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 0.05A; 350mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT323
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
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SBR6100CTL-13 DIODES INCORPORATED SBR6100CTL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 3Ax2; reel,tape
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Load current: 3A x2
Max. forward impulse current: 78A
Max. off-state voltage: 100V
Semiconductor structure: common cathode; double
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AP1501A-50K5G-13 AP1501A-DTE.pdf
AP1501A-50K5G-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 5VDC; 5A; TO263-5; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 5V DC
Output current: 5A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 78%
на замовлення 124 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+358.43 грн
10+233.72 грн
25+214.73 грн
100+185.00 грн
Мінімальне замовлення: 2
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DT1240A-08LP3810-7 DT1240A-08LP3810.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 5.5A; unidirectional; uDFN9; Ch: 8; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: uDFN9
Max. off-state voltage: 3.3V
Leakage current: 0.5µA
Number of channels: 8
Kind of package: reel; tape
Capacitance: 0.7pF
Application: HDMI; USB
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DT1240V3-04LP-7 DT1240V3-04LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; unidirectional; DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 0.5µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
Application: HDMI
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DT1240-04LP-7 DT1240-04LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 60W; unidirectional; U-DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 5.5V
Leakage current: 0.5µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
Application: HDMI; USB
Peak pulse power dissipation: 60W
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DT1240-08LP3810-7 DT1240-08LP3810.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; unidirectional; uDFN9; Ch: 8; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: uDFN9
Max. off-state voltage: 5.5V
Leakage current: 0.5µA
Number of channels: 8
Kind of package: reel; tape
Capacitance: 0.6pF
Application: HDMI; USB
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DT1240-04LP20-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Mounting: SMD
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DT1240-04LPQ-7 DT1240-04LPQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5.5A; 60W; unidirectional; U-DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 5.5V
Leakage current: 0.5µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
Application: automotive industry; HDMI; USB
Peak pulse power dissipation: 60W
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DT1240A-04LP-7 DT1240A-04LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 5.5A; unidirectional; DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
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DT1240A-04LPQ-7 DT1240A-04LPQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 5.5A; unidirectional; DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.65pF
Application: automotive industry
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DT1240A-08LP3810Q-7 DT1240A-08LP3810Q.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 5.5A; unidirectional; uDFN9; Ch: 8; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: uDFN9
Max. off-state voltage: 3.3V
Leakage current: 0.5µA
Number of channels: 8
Kind of package: reel; tape
Capacitance: 0.7pF
Application: automotive industry; HDMI; USB
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DT1240-04LP20-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 0.06kW; unidirectional; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5.5V
Leakage current: 0.5µA
Number of channels: 4
Application: HDMI; USB
Peak pulse power dissipation: 60W
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+5.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DT1240A-04LPQ-7 DT1240A-04LPQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.052kW; U-DFN2510-10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: U-DFN2510-10
Max. off-state voltage: 3.3V
Number of channels: 4
Application: HDMI; USB
Peak pulse power dissipation: 0.052kW
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+8.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
1N4934-T 1N4934_37.pdf
1N4934-T
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
на замовлення 495 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.23 грн
84+4.96 грн
93+4.46 грн
130+3.19 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
AP9101CAK6-ANTRG1 AP9101C.pdf
AP9101CAK6-ANTRG1
Виробник: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; shutdown input; SOT26
Kind of integrated circuit: battery charging controller
Kind of package: reel; tape
Type of integrated circuit: PMIC
Mounting: SMD
Integrated circuit features: shutdown input
Case: SOT26
Operating temperature: -40...85°C
Supply voltage: 1.5...5.5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
на замовлення 175 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
35+11.89 грн
100+10.57 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
AP9101CK6-AXTRG1 AP9101C.pdf
AP9101CK6-AXTRG1
Виробник: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; shutdown input; SOT26
Kind of integrated circuit: battery charging controller
Kind of package: reel; tape
Type of integrated circuit: PMIC
Mounting: SMD
Integrated circuit features: shutdown input
Case: SOT26
Operating temperature: -40...85°C
Supply voltage: 1.5...5.5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
на замовлення 400 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.94 грн
35+12.31 грн
100+10.90 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
AP9211SA-AL-HAC-7 AP9211.pdf
AP9211SA-AL-HAC-7
Виробник: DIODES INCORPORATED
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; MOSFET,shutdown input
Type of integrated circuit: PMIC
Kind of integrated circuit: battery charging controller
Mounting: SMD
Number of rechargeable batteries: 1 x Li+
Case: U-DFN2030-6
Supply voltage: 1.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: MOSFET; shutdown input
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.71 грн
25+40.72 грн
100+36.01 грн
500+32.37 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
74AUP1G04FW4-7 74AUP1G04.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; X2-DFN1010-6; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AUP
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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US2JDF-13 US2JDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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US2JDFQ-13 US2JDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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DMG1029SVQ-7 DMG1029SV-7.pdf
DMG1029SVQ-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N/P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.4/-0.28A
On-state resistance: 1.7/4Ω
Power dissipation: 0.66W
Kind of transistor: complementary pair
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
Version: ESD
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DMG1023UVQ-13 DMG1023UVQ.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; automotive industry
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Application: automotive industry
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DMG1023UVQ-7 DMG1023UVQ.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -3A; 530mW
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -3A
Drain current: -680mA
Gate charge: 622pC
On-state resistance: 25Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of channel: enhancement
Application: automotive industry
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DMG1026UVQ-7 DMG1026UVQ_NRND.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563
Kind of package: 7 inch reel; tape
Case: SOT563
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 1A
Drain current: 0.32A
Gate charge: 0.45pC
On-state resistance: 2.1Ω
Power dissipation: 0.65W
Gate-source voltage: ±20V
Kind of channel: enhancement
Application: automotive industry
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ZXTD2090E6TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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DESD5V0S1BA-7 DESD5V0S1BA.pdf
DESD5V0S1BA-7
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Peak pulse power dissipation: 130W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Number of channels: 1
Kind of package: reel; tape
Leakage current: 0.1µA
на замовлення 943 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+13.34 грн
45+9.25 грн
70+5.95 грн
100+4.83 грн
500+3.08 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
DESD5V0U1BA-7 DESD5V0U1BA.pdf
DESD5V0U1BA-7
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷9.5V; 3A; bidirectional; SOD323; reel,tape; Ch: 1
Type of diode: TVS
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Number of channels: 1
Kind of package: reel; tape
Leakage current: 0.1µA
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DESD5V0S1BB-7 DESD5V0S1BB.pdf
DESD5V0S1BB-7
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 130W; 5.5÷9.5V; 12A; bidirectional; SOD523; reel,tape
Type of diode: TVS
Breakdown voltage: 5.5...9.5V
Max. forward impulse current: 12A
Peak pulse power dissipation: 130W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 5V
Number of channels: 1
Kind of package: reel; tape
Leakage current: 0.1µA
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FMMTA42TA FMMTA42.pdf
FMMTA42TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
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FMMTA42TA FMMTA42.pdf
FMMTA42TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+16.01 грн
33+12.55 грн
100+8.07 грн
500+5.78 грн
1000+5.10 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
FMMTA42QTA FMMTA42.pdf
FMMTA42QTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+24.01 грн
26+16.27 грн
100+8.73 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
DMNH6008SPS-13 DMNH6008SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 352A; 3.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Pulsed drain current: 352A
Power dissipation: 3.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 40.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMNH6008SPSQ-13 DMNH6008SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 352A; 3.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Pulsed drain current: 352A
Power dissipation: 3.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 40.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP2023UFDF-13 DMP2023UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.6A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 27nC
Pulsed drain current: -40A
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DMP2023UFDF-7 DMP2023UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ6.0CA-13-F SMBJ_ser.pdf
SMBJ6.0CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.67V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.67V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 850 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+16.01 грн
38+10.90 грн
43+9.83 грн
100+7.76 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
DMN3020UFDF-7 DMN3020UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 0.12Ω
Power dissipation: 1.3W
Drain current: 8.3A
Pulsed drain current: 40A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN2320UFB4-7B DMN2320UFB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 6A; 1.07W
Mounting: SMD
Case: X2-DFN1006-3
Polarisation: unipolar
Gate charge: 0.89nC
On-state resistance: 1Ω
Power dissipation: 1.07W
Drain current: 0.7A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN3020UFDF-13 DMN3020UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; Idm: 40A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Gate charge: 27nC
On-state resistance: 0.12Ω
Power dissipation: 1.3W
Drain current: 8.3A
Pulsed drain current: 40A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN2020UFCL-7 DMN2020UFCL.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 45A; 610mW
Mounting: SMD
Case: X1-DFN1616-6
Polarisation: unipolar
Gate charge: 21.5nC
On-state resistance: 26mΩ
Power dissipation: 0.61W
Drain current: 7.1A
Pulsed drain current: 45A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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BCR420UFDQ-7 BCR420UFDQ-BCR421UFDQ.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Case: U-DFN2020-6
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Topology: single transistor
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BCR420UFD-7 BCR420UFD.pdf
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Case: U-DFN2020-6
Operating temperature: -55...150°C
Output current: 10...350mA
Number of channels: 1
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Topology: single transistor
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ZXTN25060BFHTA ZXTN25060BFH.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
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DMN3024SFG-13 DMN3024SFG.pdf
DMN3024SFG-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 60A
Power dissipation: 1.4W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2018 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+29.35 грн
18+23.87 грн
100+18.50 грн
500+15.28 грн
1000+14.29 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
74AHC125S14-13 74AHC125.pdf
74AHC125S14-13
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: AHC
Case: SO14
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74HCT126S14-13 74HCT126.pdf
74HCT126S14-13
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Manufacturer series: HCT
на замовлення 1100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+19.57 грн
28+15.03 грн
32+13.30 грн
36+11.48 грн
100+9.50 грн
250+8.75 грн
500+8.26 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
74HCT126T14-13 74HCT126.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS,TTL; SMD; TSSOP14; -40÷150°C; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
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74AHC126S14-13 74AHC126.pdf
74AHC126S14-13
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of output: 3-state
Manufacturer series: AHC
на замовлення 1506 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.45 грн
50+8.34 грн
100+7.27 грн
500+6.52 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BC846BW-13-F
BC846BW-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 100mA; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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MURS120-13-F MURS120.pdf
MURS120-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Capacitance: 27pF
на замовлення 1989 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.24 грн
25+16.85 грн
28+15.20 грн
100+10.65 грн
500+8.01 грн
800+7.27 грн
1000+7.02 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
FMMT593TA FMMT593.pdf
FMMT593TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 1499 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+36.47 грн
17+24.61 грн
50+16.85 грн
100+14.29 грн
500+10.08 грн
1000+8.92 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
FMMT593QTA FMMT593.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Current gain: 50...300
Pulsed collector current: 2A
Application: automotive industry
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AP7363-18D-13 AP7363.pdf
AP7363-18D-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.5A; DPAK; SMD
Kind of package: reel; tape
Manufacturer series: AP7363
Type of integrated circuit: voltage regulator
Case: DPAK
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 0.24V
Number of channels: 1
Output current: 1.5A
Output voltage: 1.8V
Input voltage: 2.2...5.5V
на замовлення 1928 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.91 грн
14+30.56 грн
100+20.40 грн
250+17.26 грн
500+16.02 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MSB30M-13 MSB30M.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; MSBL
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: MSBL
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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MSB30KH-13 MSB30KH.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 3A; Ifsm: 110A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 3A
Max. forward impulse current: 110A
Case: MSBL
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DMHT3006LFJ-13 DMHT3006LFJ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 80A; 2.1W
Case: V-DFN5045-12
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 80A
Drain current: 10A
Kind of package: 13 inch reel; tape
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AP1506-50K5G-13 AP1506x-DTE.pdf
AP1506-50K5G-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 5VDC; 3A; TO263-5; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...22V DC
Output voltage: 5V DC
Output current: 3A
Case: TO263-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 80%
на замовлення 464 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+83.41 грн
25+75.98 грн
100+74.33 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AP1507-D5-13 AP1507x-DTE.pdf
AP1507-D5-13
+1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷22VDC; Uout: 1.23÷18VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...22V DC
Output voltage: 1.23...18V DC
Output current: 3A
Case: TO252-5
Mounting: SMD
Frequency: 150kHz
Topology: buck
Operating temperature: -20...85°C
Kind of package: reel; tape
Efficiency: 74%
на замовлення 142 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.26 грн
10+47.24 грн
25+42.78 грн
100+37.33 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMP2016UFDF-7 DMP2016UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
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ZUMTS17NTA ZUMTS17N.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 11V; 0.05A; 350mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 11V
Collector current: 50mA
Power dissipation: 0.35W
Case: SOT323
Current gain: 56...180
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 1.4...3.2GHz
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SBR6100CTL-13 SBR6100CTL.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 100V; 3Ax2; reel,tape
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Technology: SBR®
Type of diode: Schottky rectifying
Max. forward voltage: 0.74V
Load current: 3A x2
Max. forward impulse current: 78A
Max. off-state voltage: 100V
Semiconductor structure: common cathode; double
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