Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74491) > Сторінка 1207 з 1242
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMT8012LK3-13 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Drain current: 28A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2.7W Gate charge: 34nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| DMT8012LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 7 inch reel; tape Drain current: 30A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Power dissipation: 2.2W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DMT8012LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain current: 7.6A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2.2W Gate charge: 34nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| DMT8012LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain current: 7.2A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2.1W Gate charge: 34nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
 |
DMT8012LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Drain current: 7.8A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2W Gate charge: 34nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
 |
BZT52C4V7S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BZT52C4V3S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BZT52C4V3LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 4.3V; SMD; X1-DFN1006-2; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: X1-DFN1006-2 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
BZT52C4V3T-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||
 |
BZT52C4V3TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BZT52C4V7SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BZT52C4V7TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
ZLDO1117QG12TA | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD Kind of package: reel; tape Case: SOT223 Mounting: SMD Tolerance: ±2% Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 1A Number of channels: 1 Output voltage: 1.2V Voltage drop: 1.3V Input voltage: 2.7...12V Application: automotive industry Manufacturer series: ZLDO1117 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DMTH84M1SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 400A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 63nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
 |
DMP4065S-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DMTH10H009LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Pulsed drain current: 360A Power dissipation: 3.1W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 40.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
 |
SMCJ15A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 61.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
| DMN62D1LFD-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 0.55nC Drain current: 0.4A Power dissipation: 0.5W On-state resistance: 2Ω Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| DMN62D1LFDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW; U-DFN1212-3 Type of transistor: N-MOSFET Mounting: SMD Case: U-DFN1212-3 Polarisation: unipolar Gate charge: 0.55nC Drain current: 0.4A Power dissipation: 0.5W On-state resistance: 2Ω Drain-source voltage: 60V Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||
| DMN601TKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 343mA; 500mW; SOT523 Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Gate charge: 0.51nC Drain current: 343mA Power dissipation: 0.5W On-state resistance: 2Ω Drain-source voltage: 60V Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| DMG8601UFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW Kind of package: 7 inch reel; tape Pulsed drain current: 27A Power dissipation: 920mW Gate charge: 8.8nC Polarisation: unipolar Drain current: 5.2A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Case: U-DFN3030-8 On-state resistance: 34mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
|
BZT52C36S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 36V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 36V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
на замовлення 5371 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
 |
GBU606 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: tube Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
GBU602 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Max. forward impulse current: 175A Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 200V Electrical mounting: THT Load current: 6A Kind of package: tube Case: GBU Type of bridge rectifier: single-phase |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
|
GBU6005 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
GBU601 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
SMCJ70A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 70V Breakdown voltage: 77.8...86V Max. forward impulse current: 13.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMCJ70AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 77.8V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 70V Breakdown voltage: 77.8V Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Number of channels: 1 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
|
|||||||||||||
 |
US1K_HF | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 75ns; SMA; 1.7V; 5uA Type of diode: rectifying Mounting: SMD Reverse recovery time: 75ns Case: SMA Max. forward voltage: 1.7V Leakage current: 5µA Capacitance: 10pF |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
 |
MBR230S1F-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape Mounting: SMD Case: SOD123F Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 30A Max. forward voltage: 0.42V Max. off-state voltage: 30V |
на замовлення 138 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
|
ZXMP10A13FTA | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.5A; 0.625W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -500mA Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
ZXMP10A13FQTA | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; Idm: -3.1A; 0.625W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -700mA Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -3.1A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
ZXMP10A13FTC | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; Idm: -3.1A; 0.625W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -700mA Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -3.1A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
|
|
SMCJ54CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
| MMDT3906VC-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 150mW; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SOT563 Current gain: 30...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
DMN3115UDMQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26 Case: SOT26 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.13Ω Power dissipation: 0.9W Drain current: 3.2A Gate-source voltage: ±8V Pulsed drain current: 12.8A Drain-source voltage: 30V Kind of package: 13 inch reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
 |
DDTC113ZCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DDTC113ZE-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
DDTC113ZUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MMBZ5248B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 18V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MMBZ5248BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 18V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.35W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
MMBZ5248BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 18V; SMD; SOT363; double independent; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT363 Semiconductor structure: double independent Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MMBZ5248BTS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 18V; SMD; SOT363; triple independent; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT363 Semiconductor structure: triple independent Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
 |
MMBZ5248BW-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 18V; SMD; SOT323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MMSZ5251BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 22V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 236 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
|
MMBZ5251B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 22V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
MMBZ5251BTS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 22V; SMD; SOT363; reel,tape; triple independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SOT363 Kind of package: reel; tape Semiconductor structure: triple independent |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
 |
SMAJ7.5A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 8.33÷9.21V; 31A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.1mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
BAV116W-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 130V; 0.215A; 3us; SOD123; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 130V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD123 Max. forward voltage: 1.25V Kind of package: reel; tape |
на замовлення 2242 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
 |
BAV116T-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 3us; SOD523; Ufmax: 1.1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD523 Max. forward voltage: 1.1V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
BAV116HWFQ-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD123F; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD123F Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BAV116HWF-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD123F; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
ZXTN19020DZQTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 7.5A; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 7.5A Case: SOT89 Pulsed collector current: 20A Mounting: SMD Kind of package: reel; tape Frequency: 160MHz Application: automotive industry Manufacturer standard package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| ZXTN19020DFFTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 6.5A; 1.5W; SOT23F Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 6.5A Case: SOT23F Pulsed collector current: 20A Mounting: SMD Frequency: 150MHz Power dissipation: 1.5W |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| DXTP19020DP5-13 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 8A; 3W; PowerDI®5 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 8A Case: PowerDI®5 Mounting: SMD Frequency: 176MHz Power dissipation: 3W |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| ZXTN19020CFFTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 7A; 1.5W; SOT23F Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 7A Case: SOT23F Pulsed collector current: 15A Mounting: SMD Frequency: 150MHz Power dissipation: 1.5W |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
|
|
ZXTN19020DGTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 9A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 9A Case: SOT223 Pulsed collector current: 20A Mounting: SMD Frequency: 160MHz Power dissipation: 3W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
AP2196SG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD Kind of package: reel; tape Case: SO8 Kind of integrated circuit: high-side; USB switch Number of channels: 2 On-state resistance: 90mΩ Mounting: SMD Supply voltage: 2.7...5.5V DC Active logical level: high Output current: 1.5A Type of integrated circuit: power switch Kind of output: P-Channel |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
|
B0540W-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Capacitance: 170pF Max. forward voltage: 0.46V Max. forward impulse current: 5.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| GBJ1010-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 170A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 170A Version: flat Case: GBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. |
| DMT8012LK3-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.7W
Gate charge: 34nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.7W
Gate charge: 34nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT8012LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Power dissipation: 2.2W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Power dissipation: 2.2W
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| DMT8012LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.2W
Gate charge: 34nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.2W
Gate charge: 34nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT8012LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain current: 7.2A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 34nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain current: 7.2A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 34nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT8012LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain current: 7.8A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2W
Gate charge: 34nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain current: 7.8A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2W
Gate charge: 34nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BZT52C4V7S-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C4V3S-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C4V3LP-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C4V3T-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| BZT52C4V3TQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C4V7SQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C4V7TQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| ZLDO1117QG12TA |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Tolerance: ±2%
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 1A
Number of channels: 1
Output voltage: 1.2V
Voltage drop: 1.3V
Input voltage: 2.7...12V
Application: automotive industry
Manufacturer series: ZLDO1117
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Tolerance: ±2%
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 1A
Number of channels: 1
Output voltage: 1.2V
Voltage drop: 1.3V
Input voltage: 2.7...12V
Application: automotive industry
Manufacturer series: ZLDO1117
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику
од. на суму грн.
| DMTH84M1SPSQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMP4065S-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H009LPSQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Pulsed drain current: 360A
Power dissipation: 3.1W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 40.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Pulsed drain current: 360A
Power dissipation: 3.1W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 40.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SMCJ15A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMN62D1LFD-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 0.55nC
Drain current: 0.4A
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 0.55nC
Drain current: 0.4A
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMN62D1LFDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW; U-DFN1212-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN1212-3
Polarisation: unipolar
Gate charge: 0.55nC
Drain current: 0.4A
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW; U-DFN1212-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN1212-3
Polarisation: unipolar
Gate charge: 0.55nC
Drain current: 0.4A
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN601TKQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 343mA; 500mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Gate charge: 0.51nC
Drain current: 343mA
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 343mA; 500mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Gate charge: 0.51nC
Drain current: 343mA
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMG8601UFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW
Kind of package: 7 inch reel; tape
Pulsed drain current: 27A
Power dissipation: 920mW
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: U-DFN3030-8
On-state resistance: 34mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW
Kind of package: 7 inch reel; tape
Pulsed drain current: 27A
Power dissipation: 920mW
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: U-DFN3030-8
On-state resistance: 34mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C36S-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 36V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 36V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
на замовлення 5371 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 82+ | 5.07 грн |
| 96+ | 4.36 грн |
| 157+ | 2.66 грн |
| 500+ | 1.89 грн |
| 3000+ | 1.72 грн |
| GBU606 |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
товару немає в наявності
В кошику
од. на суму грн.
| GBU602 |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Max. forward impulse current: 175A
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: GBU
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Max. forward impulse current: 175A
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: GBU
Type of bridge rectifier: single-phase
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 124.33 грн |
| 10+ | 75.91 грн |
| 20+ | 68.52 грн |
| GBU6005 |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| GBU601 |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ70A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 13.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 13.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ70AQ-13-F |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 77.8V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.93 грн |
| US1K_HF |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 75ns; SMA; 1.7V; 5uA
Type of diode: rectifying
Mounting: SMD
Reverse recovery time: 75ns
Case: SMA
Max. forward voltage: 1.7V
Leakage current: 5µA
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 75ns; SMA; 1.7V; 5uA
Type of diode: rectifying
Mounting: SMD
Reverse recovery time: 75ns
Case: SMA
Max. forward voltage: 1.7V
Leakage current: 5µA
Capacitance: 10pF
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.90 грн |
| MBR230S1F-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 30A
Max. forward voltage: 0.42V
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 30A
Max. forward voltage: 0.42V
Max. off-state voltage: 30V
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.21 грн |
| 40+ | 10.38 грн |
| 45+ | 9.30 грн |
| 50+ | 8.64 грн |
| 100+ | 8.22 грн |
| ZXMP10A13FTA |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.5A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -500mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.5A; 0.625W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -500mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| ZXMP10A13FQTA |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; Idm: -3.1A; 0.625W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -700mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -3.1A
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; Idm: -3.1A; 0.625W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -700mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -3.1A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| ZXMP10A13FTC |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; Idm: -3.1A; 0.625W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -700mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -3.1A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.7A; Idm: -3.1A; 0.625W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -700mA
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -3.1A
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SMCJ54CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMDT3906VC-7 |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| DMN3115UDMQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26
Case: SOT26
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.13Ω
Power dissipation: 0.9W
Drain current: 3.2A
Gate-source voltage: ±8V
Pulsed drain current: 12.8A
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26
Case: SOT26
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.13Ω
Power dissipation: 0.9W
Drain current: 3.2A
Gate-source voltage: ±8V
Pulsed drain current: 12.8A
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DDTC113ZCA-7-F |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| DDTC113ZE-7-F |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| DDTC113ZUA-7-F |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5248B-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5248BQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5248BS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOT363; double independent; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOT363; double independent; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: double independent
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5248BTS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOT363; triple independent; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOT363; triple independent; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBZ5248BW-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5251BS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 236 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 85+ | 4.90 грн |
| 174+ | 2.39 грн |
| MMBZ5251B-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 22V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 22V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5251BTS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; SOT363; reel,tape; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; SOT363; reel,tape; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Semiconductor structure: triple independent
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMAJ7.5A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.33÷9.21V; 31A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 8.33÷9.21V; 31A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BAV116W-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 130V; 0.215A; 3us; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 130V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 130V; 0.215A; 3us; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 130V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Max. forward voltage: 1.25V
Kind of package: reel; tape
на замовлення 2242 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.52 грн |
| 50+ | 8.47 грн |
| 57+ | 7.39 грн |
| 100+ | 4.92 грн |
| 500+ | 3.96 грн |
| 1000+ | 3.54 грн |
| BAV116T-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 3us; SOD523; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 3us; SOD523; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 1.1V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BAV116HWFQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BAV116HWF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| ZXTN19020DZQTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 7.5A; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 7.5A
Case: SOT89
Pulsed collector current: 20A
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 7.5A; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 7.5A
Case: SOT89
Pulsed collector current: 20A
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
Manufacturer standard package: 1000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| ZXTN19020DFFTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6.5A; 1.5W; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6.5A
Case: SOT23F
Pulsed collector current: 20A
Mounting: SMD
Frequency: 150MHz
Power dissipation: 1.5W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6.5A; 1.5W; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 6.5A
Case: SOT23F
Pulsed collector current: 20A
Mounting: SMD
Frequency: 150MHz
Power dissipation: 1.5W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DXTP19020DP5-13 |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 8A; 3W; PowerDI®5
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 8A
Case: PowerDI®5
Mounting: SMD
Frequency: 176MHz
Power dissipation: 3W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 8A; 3W; PowerDI®5
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 8A
Case: PowerDI®5
Mounting: SMD
Frequency: 176MHz
Power dissipation: 3W
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ZXTN19020CFFTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 7A; 1.5W; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 7A
Case: SOT23F
Pulsed collector current: 15A
Mounting: SMD
Frequency: 150MHz
Power dissipation: 1.5W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 7A; 1.5W; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 7A
Case: SOT23F
Pulsed collector current: 15A
Mounting: SMD
Frequency: 150MHz
Power dissipation: 1.5W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ZXTN19020DGTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 9A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 9A
Case: SOT223
Pulsed collector current: 20A
Mounting: SMD
Frequency: 160MHz
Power dissipation: 3W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 9A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 9A
Case: SOT223
Pulsed collector current: 20A
Mounting: SMD
Frequency: 160MHz
Power dissipation: 3W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| AP2196SG-13 |
|
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: high-side; USB switch
Number of channels: 2
On-state resistance: 90mΩ
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: high
Output current: 1.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 2; P-Channel; SMD
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: high-side; USB switch
Number of channels: 2
On-state resistance: 90mΩ
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Active logical level: high
Output current: 1.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| B0540W-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| GBJ1010-F |
|
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 170A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 170A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.