Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73959) > Сторінка 1207 з 1233
| Фото | Назва | Виробник | Інформація |
Доступність |
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DMHC3025LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 11.7/11.4nC On-state resistance: 25/50mΩ Power dissipation: 1.5W Drain current: 6/-4.2A Gate-source voltage: ±20V Drain-source voltage: 30/-30V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Case: SO8 Kind of channel: enhancement |
на замовлення 492 шт: термін постачання 21-30 дні (днів) |
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DMG6602SVT-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.8/-3.4A Power dissipation: 1.112W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 0.06/0.095Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 923 шт: термін постачання 21-30 дні (днів) |
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ZTX653 | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO92 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 175MHz |
на замовлення 3265 шт: термін постачання 21-30 дні (днів) |
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BZX84C3V3W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 3.3V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
на замовлення 2573 шт: термін постачання 21-30 дні (днів) |
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ZXTR2012Z-13 | DIODES INCORPORATED |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 12V; 0.015A; SOT89; SMD; ±10% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 15mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±10% Number of channels: 1 Input voltage: 15...100V |
на замовлення 1392 шт: термін постачання 21-30 дні (днів) |
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BAS40W-04-7-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape Type of diode: Schottky rectifying Case: SOT523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Capacitance: 5pF Reverse recovery time: 5ns Leakage current: 0.2µA Power dissipation: 0.2W |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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DMP4047SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252 Kind of channel: enhancement Type of transistor: P-MOSFET Case: TO252 Mounting: SMD Polarisation: unipolar Drain current: -18A Drain-source voltage: -40V On-state resistance: 55mΩ Power dissipation: 1.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 2164 шт: термін постачання 21-30 дні (днів) |
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| DMP4047LFDEQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W Kind of channel: enhancement Type of transistor: P-MOSFET Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Pulsed drain current: -36A Drain current: -5.2A Drain-source voltage: -40V Gate charge: 24.9nC On-state resistance: 50mΩ Power dissipation: 2.1W Gate-source voltage: ±20V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ54A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 4460 шт: термін постачання 21-30 дні (днів) |
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SMBJ54CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 60÷69V; 6.9A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 465 шт: термін постачання 21-30 дні (днів) |
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DNBT8105-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.6W Collector current: 1A Current gain: 100...300 Collector-emitter voltage: 60V Quantity in set/package: 3000pcs. Polarisation: bipolar Frequency: 150MHz Type of transistor: NPN |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
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ZTX653STZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO92 Mounting: THT Quantity in set/package: 2000pcs. Kind of package: Ammo Pack Frequency: 175MHz |
на замовлення 1617 шт: термін постачання 21-30 дні (днів) |
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| 1N4937-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N4937G-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DT1042-04TS-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.2V; unidirectional; TSOT26; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.2V Semiconductor structure: unidirectional Mounting: SMD Case: TSOT26 Max. off-state voltage: 5V Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape Capacitance: 0.8pF Application: HDMI |
на замовлення 2966 шт: термін постачання 21-30 дні (днів) |
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DMN61D8LVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: 7 inch reel; tape Drain current: 0.5A Gate charge: 740pC On-state resistance: 2.4Ω Power dissipation: 1.09W Gate-source voltage: ±12V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V |
на замовлення 2823 шт: термін постачання 21-30 дні (днів) |
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| DST3904DJ-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 300mW; SOT963 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.3W Case: SOT963 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BC847CWQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Application: automotive industry Pulsed collector current: 0.2A Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP2552AFDC-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Kind of package: reel; tape Mounting: SMD Kind of integrated circuit: high-side; USB switch Active logical level: low Kind of output: P-Channel Type of integrated circuit: power switch Case: U-DFN2020-6 Type C On-state resistance: 80mΩ Number of channels: 1 Output current: 2.5A Supply voltage: 2.7...5.5V DC |
на замовлення 2997 шт: термін постачання 21-30 дні (днів) |
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AP2553FDC-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD Active logical level: high Kind of integrated circuit: high-side; USB switch Case: U-DFN2020-6 Type C Kind of output: P-Channel Kind of package: reel; tape Mounting: SMD On-state resistance: 80mΩ Number of channels: 1 Supply voltage: 2.7...5.5V DC Output current: 2.5A Type of integrated circuit: power switch |
на замовлення 2748 шт: термін постачання 21-30 дні (днів) |
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| DMTH4014LPD-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 10.2nC On-state resistance: 25mΩ Power dissipation: 2.4W Drain current: 7.5A Case: PowerDI5060-8 Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 174A Type of transistor: N-MOSFET Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMTH4014LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 11.2nC On-state resistance: 26mΩ Power dissipation: 3.1W Application: automotive industry Drain current: 8.1A Case: PowerDI3333-8 Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 180A Type of transistor: N-MOSFET Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMTH4014LFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W Kind of package: 7 inch reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 11.2nC On-state resistance: 26mΩ Power dissipation: 3.1W Application: automotive industry Drain current: 8.1A Case: PowerDI3333-8 Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 180A Type of transistor: N-MOSFET Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMTH4014LPDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 10.2nC On-state resistance: 25mΩ Power dissipation: 2.4W Application: automotive industry Drain current: 7.5A Case: PowerDI5060-8 Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 174A Type of transistor: N-MOSFET Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BC857BV-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 45V; 0.1A; 150mW; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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| ADTC124ECAQ-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Application: automotive industry Current gain: 56 Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ADTC124ECAQ-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Application: automotive industry Current gain: 56 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DDTC124ECA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP3602AKTR-G1 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; charge pump; SOT26; 50÷100mA; 2.7÷5VDC; 1.2MHz Type of integrated circuit: driver Kind of integrated circuit: charge pump Case: SOT26 Output current: 50...100mA Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.7...5V DC Frequency: 1.2MHz |
на замовлення 2987 шт: термін постачання 21-30 дні (днів) |
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DDTC114ECA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 50mA Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Power dissipation: 0.2W Quantity in set/package: 3000pcs. Frequency: 250MHz |
на замовлення 5760 шт: термін постачання 21-30 дні (днів) |
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ADTC114ECAQ-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Power dissipation: 0.31W Current gain: 30 Quantity in set/package: 3000pcs. Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NE555S-13 | DIODES INCORPORATED |
Category: Watchdog and reset circuitsDescription: IC: peripheral circuit Type of integrated circuit: peripheral circuit |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| GBU806-01-LS | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
на замовлення 21000 шт: термін постачання 21-30 дні (днів) |
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| BSS84DWQ-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: BSS84DWQ-13 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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DMN6070SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Case: SO8 On-state resistance: 0.1Ω Power dissipation: 1.2W Drain current: 3.6A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 13 inch reel; tape Polarisation: unipolar |
на замовлення 1057 шт: термін постачання 21-30 дні (днів) |
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AZ23C36-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOT23; double,common anode Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 36V Tolerance: ±5% Semiconductor structure: common anode; double |
на замовлення 2978 шт: термін постачання 21-30 дні (днів) |
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| DDTC124EE-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DDTC124EUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DDTC124EUAQ-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Quantity in set/package: 3000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DDTC124TCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Current gain: 100...600 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PAM2312AABADJ | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz Case: TSOT25 Mounting: SMD Kind of package: reel; tape Frequency: 1.5MHz Operating temperature: -40...85°C Output current: 1A Input voltage: 2.5...5.5V DC Efficiency: 96% Type of integrated circuit: PMIC Topology: buck Kind of integrated circuit: DC/DC converter |
на замовлення 8895 шт: термін постачання 21-30 дні (днів) |
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SMBJ100CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SMBJ100CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DT1140-04LPQ-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array Type of diode: TVS array |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| ZXSC300E5TA | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver Type of integrated circuit: driver |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| DMP2016UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET Type of transistor: P-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| MBR10200CT-G1 | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 15mA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ZXLD1360QET5TA | DIODES INCORPORATED |
Category: Integrated circuits - UnclassifiedDescription: ZXLD1360QET5TA |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| TLV431BQFTA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; ±0.5%; SOT23-3 Type of integrated circuit: voltage reference source Tolerance: ±0.5% Mounting: SMD Case: SOT23-3 Operating temperature: -40...125°C |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| TLV431AQE5TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; ±1%; SOT25 Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: SMD Case: SOT25 Operating temperature: -40...125°C |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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74HCT595T16-13 | DIODES INCORPORATED |
Category: Shift registersDescription: IC: digital; 8bit,shift register,serial input,parallel out Operating temperature: -40...150°C Kind of package: reel; tape Case: TSSOP16 Type of integrated circuit: digital Family: HCT Mounting: SMD Kind of input: with Schmitt trigger Kind of integrated circuit: 8bit; parallel out; serial input; shift register Number of channels: 8 Supply voltage: 4.5...5.5V DC Technology: CMOS; TTL Kind of output: 3-state |
на замовлення 182 шт: термін постачання 21-30 дні (днів) |
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| MMBT4401Q-13-F | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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| ULN62003AS16-13 | DIODES INCORPORATED |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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SMBJ120CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...153V Max. forward impulse current: 3.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2850 шт: термін постачання 21-30 дні (днів) |
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AL9910AS-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 10VDC; 90% Type of integrated circuit: driver Kind of integrated circuit: LED driver Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 10V DC Efficiency: 90% Integrated circuit features: linear dimming; PWM |
на замовлення 1415 шт: термін постачання 21-30 дні (днів) |
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| 74AHCT32S14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Case: SO14 Kind of gate: OR Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Number of inputs: 2 Family: AHCT Supply voltage: 4.5...5.5V DC Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74AHCT32T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Case: TSSOP14 Kind of gate: OR Kind of output: push-pull Number of channels: 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Number of inputs: 2 Family: AHCT Supply voltage: 4.5...5.5V DC Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMC1018UPD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| DMC1018UPDWQ-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| ZXTN23015CFHTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
на замовлення 21000 шт: термін постачання 21-30 дні (днів) |
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| DMHC3025LSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 11.7/11.4nC
On-state resistance: 25/50mΩ
Power dissipation: 1.5W
Drain current: 6/-4.2A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Case: SO8
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; complementary pair; 30/-30V; 1.5W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 11.7/11.4nC
On-state resistance: 25/50mΩ
Power dissipation: 1.5W
Drain current: 6/-4.2A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Case: SO8
Kind of channel: enhancement
на замовлення 492 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.95 грн |
| 10+ | 51.25 грн |
| 50+ | 38.05 грн |
| 100+ | 33.38 грн |
| 250+ | 28.05 грн |
| DMG6602SVT-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.8/-3.4A
Power dissipation: 1.112W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.06/0.095Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.8/-3.4A
Power dissipation: 1.112W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.06/0.095Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 923 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.61 грн |
| 25+ | 16.73 грн |
| 50+ | 10.74 грн |
| 100+ | 8.86 грн |
| 500+ | 5.99 грн |
| ZTX653 |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 175MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 175MHz
на замовлення 3265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.37 грн |
| 10+ | 46.42 грн |
| 40+ | 36.98 грн |
| 100+ | 31.90 грн |
| 200+ | 28.62 грн |
| 500+ | 24.85 грн |
| 1000+ | 24.60 грн |
| BZX84C3V3W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
на замовлення 2573 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.36 грн |
| 52+ | 8.04 грн |
| 101+ | 4.08 грн |
| 1000+ | 2.85 грн |
| 2000+ | 2.72 грн |
| ZXTR2012Z-13 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.015A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 15...100V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.015A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 15...100V
на замовлення 1392 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.26 грн |
| 20+ | 21.49 грн |
| 22+ | 19.11 грн |
| 25+ | 16.48 грн |
| 100+ | 13.78 грн |
| 250+ | 12.63 грн |
| 500+ | 12.05 грн |
| BAS40W-04-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 5pF
Reverse recovery time: 5ns
Leakage current: 0.2µA
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Capacitance: 5pF
Reverse recovery time: 5ns
Leakage current: 0.2µA
Power dissipation: 0.2W
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.30 грн |
| 1000+ | 4.17 грн |
| DMP4047SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Drain current: -18A
Drain-source voltage: -40V
On-state resistance: 55mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO252
Mounting: SMD
Polarisation: unipolar
Drain current: -18A
Drain-source voltage: -40V
On-state resistance: 55mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 2164 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.82 грн |
| 12+ | 35.84 грн |
| 100+ | 23.95 грн |
| 500+ | 17.80 грн |
| 1000+ | 15.58 грн |
| DMP4047LFDEQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -36A
Drain current: -5.2A
Drain-source voltage: -40V
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: -36A
Drain current: -5.2A
Drain-source voltage: -40V
Gate charge: 24.9nC
On-state resistance: 50mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ54A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4460 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.31 грн |
| 26+ | 16.07 грн |
| 30+ | 13.78 грн |
| 40+ | 10.50 грн |
| 100+ | 6.72 грн |
| 500+ | 5.33 грн |
| SMBJ54CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 465 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.96 грн |
| 25+ | 16.89 грн |
| 29+ | 14.60 грн |
| 100+ | 8.61 грн |
| DNBT8105-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.6W
Collector current: 1A
Current gain: 100...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.6W
Collector current: 1A
Current gain: 100...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: NPN
на замовлення 289 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.78 грн |
| 40+ | 10.50 грн |
| 57+ | 7.28 грн |
| 100+ | 6.21 грн |
| ZTX653STZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 175MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 175MHz
на замовлення 1617 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.60 грн |
| 10+ | 53.06 грн |
| 25+ | 43.22 грн |
| 100+ | 31.74 грн |
| 250+ | 26.49 грн |
| 500+ | 24.93 грн |
| 1N4937-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
товару немає в наявності
В кошику
од. на суму грн.
| 1N4937G-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| DT1042-04TS-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.8pF
Application: HDMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; unidirectional; TSOT26; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.8pF
Application: HDMI
на замовлення 2966 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 32+ | 12.96 грн |
| 36+ | 11.56 грн |
| 42+ | 9.84 грн |
| 100+ | 7.72 грн |
| 500+ | 5.97 грн |
| 1000+ | 5.40 грн |
| DMN61D8LVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
на замовлення 2823 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.27 грн |
| 15+ | 29.28 грн |
| 30+ | 23.78 грн |
| 100+ | 18.86 грн |
| 150+ | 17.39 грн |
| 500+ | 13.78 грн |
| 1000+ | 12.05 грн |
| DST3904DJ-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 300mW; SOT963
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT963
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 300mW; SOT963
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT963
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Quantity in set/package: 3000pcs.
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| BC847CWQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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| AP2552AFDC-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Number of channels: 1
Output current: 2.5A
Supply voltage: 2.7...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Case: U-DFN2020-6 Type C
On-state resistance: 80mΩ
Number of channels: 1
Output current: 2.5A
Supply voltage: 2.7...5.5V DC
на замовлення 2997 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.61 грн |
| 22+ | 19.52 грн |
| 24+ | 17.39 грн |
| 28+ | 15.01 грн |
| 100+ | 12.38 грн |
| 250+ | 11.23 грн |
| 500+ | 10.91 грн |
| AP2553FDC-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Case: U-DFN2020-6 Type C
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 80mΩ
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Output current: 2.5A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Case: U-DFN2020-6 Type C
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 80mΩ
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Output current: 2.5A
Type of integrated circuit: power switch
на замовлення 2748 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.26 грн |
| 20+ | 21.16 грн |
| 22+ | 18.86 грн |
| 26+ | 16.16 грн |
| 100+ | 13.28 грн |
| 250+ | 11.97 грн |
| 500+ | 11.32 грн |
| 1000+ | 10.74 грн |
| DMTH4014LPD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 10.2nC
On-state resistance: 25mΩ
Power dissipation: 2.4W
Drain current: 7.5A
Case: PowerDI5060-8
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 174A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 10.2nC
On-state resistance: 25mΩ
Power dissipation: 2.4W
Drain current: 7.5A
Case: PowerDI5060-8
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 174A
Type of transistor: N-MOSFET
Kind of channel: enhancement
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| DMTH4014LFVWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 11.2nC
On-state resistance: 26mΩ
Power dissipation: 3.1W
Application: automotive industry
Drain current: 8.1A
Case: PowerDI3333-8
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 180A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 11.2nC
On-state resistance: 26mΩ
Power dissipation: 3.1W
Application: automotive industry
Drain current: 8.1A
Case: PowerDI3333-8
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 180A
Type of transistor: N-MOSFET
Kind of channel: enhancement
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од. на суму грн.
| DMTH4014LFVWQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W
Kind of package: 7 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 11.2nC
On-state resistance: 26mΩ
Power dissipation: 3.1W
Application: automotive industry
Drain current: 8.1A
Case: PowerDI3333-8
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 180A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W
Kind of package: 7 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 11.2nC
On-state resistance: 26mΩ
Power dissipation: 3.1W
Application: automotive industry
Drain current: 8.1A
Case: PowerDI3333-8
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 180A
Type of transistor: N-MOSFET
Kind of channel: enhancement
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В кошику
од. на суму грн.
| DMTH4014LPDQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 10.2nC
On-state resistance: 25mΩ
Power dissipation: 2.4W
Application: automotive industry
Drain current: 7.5A
Case: PowerDI5060-8
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 174A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.5A; Idm: 174A; 2.4W
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 10.2nC
On-state resistance: 25mΩ
Power dissipation: 2.4W
Application: automotive industry
Drain current: 7.5A
Case: PowerDI5060-8
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 174A
Type of transistor: N-MOSFET
Kind of channel: enhancement
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од. на суму грн.
| BC857BV-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.96 грн |
| 29+ | 14.43 грн |
| 100+ | 8.97 грн |
| ADTC124ECAQ-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 10000pcs.
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од. на суму грн.
| ADTC124ECAQ-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Current gain: 56
Quantity in set/package: 3000pcs.
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| DDTC124ECA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
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| AP3602AKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; charge pump; SOT26; 50÷100mA; 2.7÷5VDC; 1.2MHz
Type of integrated circuit: driver
Kind of integrated circuit: charge pump
Case: SOT26
Output current: 50...100mA
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.7...5V DC
Frequency: 1.2MHz
Category: LED drivers
Description: IC: driver; charge pump; SOT26; 50÷100mA; 2.7÷5VDC; 1.2MHz
Type of integrated circuit: driver
Kind of integrated circuit: charge pump
Case: SOT26
Output current: 50...100mA
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.7...5V DC
Frequency: 1.2MHz
на замовлення 2987 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.79 грн |
| 17+ | 24.27 грн |
| 20+ | 21.40 грн |
| 25+ | 18.29 грн |
| 100+ | 15.25 грн |
| 250+ | 15.09 грн |
| 500+ | 14.52 грн |
| 1000+ | 14.02 грн |
| DDTC114ECA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 50mA; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 50mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Frequency: 250MHz
на замовлення 5760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.36 грн |
| 60+ | 6.89 грн |
| 108+ | 3.81 грн |
| 250+ | 3.01 грн |
| 500+ | 2.53 грн |
| 3000+ | 1.66 грн |
| ADTC114ECAQ-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.31W
Current gain: 30
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.31W
Current gain: 30
Quantity in set/package: 3000pcs.
Frequency: 250MHz
Application: automotive industry
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| NE555S-13 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: peripheral circuit
Type of integrated circuit: peripheral circuit
Category: Watchdog and reset circuits
Description: IC: peripheral circuit
Type of integrated circuit: peripheral circuit
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 7.60 грн |
| GBU806-01-LS |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 21000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 320+ | 20.22 грн |
| BSS84DWQ-13 |
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на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.01 грн |
| DMN6070SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: SO8
On-state resistance: 0.1Ω
Power dissipation: 1.2W
Drain current: 3.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: SO8
On-state resistance: 0.1Ω
Power dissipation: 1.2W
Drain current: 3.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Polarisation: unipolar
на замовлення 1057 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.51 грн |
| 13+ | 32.97 грн |
| 14+ | 29.69 грн |
| 100+ | 19.11 грн |
| 500+ | 14.10 грн |
| 1000+ | 13.37 грн |
| AZ23C36-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOT23; double,common anode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Tolerance: ±5%
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOT23; double,common anode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Tolerance: ±5%
Semiconductor structure: common anode; double
на замовлення 2978 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.36 грн |
| 45+ | 9.18 грн |
| 52+ | 7.95 грн |
| 100+ | 4.59 грн |
| 500+ | 3.50 грн |
| 1000+ | 3.23 грн |
| DDTC124EE-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
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| DDTC124EUA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
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| DDTC124EUAQ-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT323; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Application: automotive industry
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| DDTC124TCA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Current gain: 100...600
Quantity in set/package: 3000pcs.
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| PAM2312AABADJ |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Case: TSOT25
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5MHz
Operating temperature: -40...85°C
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.5÷5.5VDC; 1A; TSOT25; SMD; 1.5MHz
Case: TSOT25
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5MHz
Operating temperature: -40...85°C
Output current: 1A
Input voltage: 2.5...5.5V DC
Efficiency: 96%
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
на замовлення 8895 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.08 грн |
| 25+ | 17.06 грн |
| 27+ | 15.25 грн |
| 32+ | 13.12 грн |
| 50+ | 11.81 грн |
| 100+ | 10.82 грн |
| 250+ | 10.58 грн |
| SMBJ100CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMBJ100CAQ-13-F |
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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| DT1140-04LPQ-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.30 грн |
| ZXSC300E5TA |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 24.29 грн |
| DMP2016UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.34 грн |
| MBR10200CT-G1 |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 15mA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 5Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 15mA
Kind of package: tube
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| ZXLD1360QET5TA |
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Виробник: DIODES INCORPORATED
Category: Integrated circuits - Unclassified
Description: ZXLD1360QET5TA
Category: Integrated circuits - Unclassified
Description: ZXLD1360QET5TA
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 145.72 грн |
| TLV431BQFTA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±0.5%; SOT23-3
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±0.5%; SOT23-3
Type of integrated circuit: voltage reference source
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...125°C
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.40 грн |
| TLV431AQE5TA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT25
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; ±1%; SOT25
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: SMD
Case: SOT25
Operating temperature: -40...125°C
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.28 грн |
| 74HCT595T16-13 |
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Виробник: DIODES INCORPORATED
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: TSSOP16
Type of integrated circuit: digital
Family: HCT
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Kind of output: 3-state
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: TSSOP16
Type of integrated circuit: digital
Family: HCT
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Kind of output: 3-state
на замовлення 182 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.84 грн |
| 23+ | 18.53 грн |
| 26+ | 16.32 грн |
| 30+ | 13.94 грн |
| 100+ | 11.56 грн |
| MMBT4401Q-13-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.08 грн |
| ULN62003AS16-13 |
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Виробник: DIODES INCORPORATED
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 25.08 грн |
| SMBJ120CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 55+ | 8.48 грн |
| 60+ | 7.13 грн |
| 100+ | 6.31 грн |
| 500+ | 6.07 грн |
| AL9910AS-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 10VDC; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 10V DC
Efficiency: 90%
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; LED driver; SO8; Ch: 1; PWM,linear dimming; 10VDC; 90%
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 10V DC
Efficiency: 90%
Integrated circuit features: linear dimming; PWM
на замовлення 1415 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 98.91 грн |
| 6+ | 77.09 грн |
| 10+ | 69.70 грн |
| 25+ | 61.50 грн |
| 50+ | 58.22 грн |
| 74AHCT32S14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Case: SO14
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Family: AHCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Case: SO14
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Family: AHCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
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| 74AHCT32T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Case: TSSOP14
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Family: AHCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Case: TSSOP14
Kind of gate: OR
Kind of output: push-pull
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of inputs: 2
Family: AHCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
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| DMC1018UPD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 20.58 грн |
| DMC1018UPDWQ-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 25.43 грн |
| ZXTN23015CFHTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 21000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 27.82 грн |




















