Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74005) > Сторінка 1209 з 1234
| Фото | Назва | Виробник | Інформація |
Доступність |
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ZRB500F03TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA Type of integrated circuit: voltage reference source Reference voltage: 5V Tolerance: ±3% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 15mA |
на замовлення 193 шт: термін постачання 21-30 дні (днів) |
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| DMTH4M70SPGWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| ZVP4525GQTA | DIODES INCORPORATED |
Category: Transistors - UnclassifiedDescription: ZVP4525GQTA |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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SMCJ85CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 10.4A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMN2710UT-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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SMAJ150A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...185V Max. forward impulse current: 1.6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2885 шт: термін постачання 21-30 дні (днів) |
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| GBU808-01-LS | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
на замовлення 860 шт: термін постачання 21-30 дні (днів) |
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B140-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Capacitance: 110pF Max. forward voltage: 0.5V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 40V |
на замовлення 1347 шт: термін постачання 21-30 дні (днів) |
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GBU606 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 175A Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated Case: GBU |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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| DMNH6010SCTB-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB Mounting: SMD Case: TO263AB Polarisation: unipolar Gate charge: 46nC On-state resistance: 10mΩ Power dissipation: 5W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 94A Pulsed drain current: 532A Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ12CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
на замовлення 135000 шт: термін постачання 21-30 дні (днів) |
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DMG2302UK-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.66W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 949 шт: термін постачання 21-30 дні (днів) |
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DMN3065LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323 Polarisation: unipolar Case: SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET On-state resistance: 85mΩ Power dissipation: 0.77W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of package: 7 inch reel; tape |
на замовлення 451 шт: термін постачання 21-30 дні (днів) |
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1SMB5929B-13 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 1321 шт: термін постачання 21-30 дні (днів) |
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DMN3042L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 1050 шт: термін постачання 21-30 дні (днів) |
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| SMBJ18A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ18AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S5BC-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A Kind of package: reel; tape Mounting: SMD Type of diode: rectifying Semiconductor structure: single diode Capacitance: 40pF Max. forward voltage: 1.15V Load current: 5A Max. forward impulse current: 100A Max. off-state voltage: 100V Case: SMC |
на замовлення 1923 шт: термін постачання 21-30 дні (днів) |
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| DPBT8105-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.6W Collector current: 1A Pulsed collector current: 2A Current gain: 30...300 Collector-emitter voltage: 60V Quantity in set/package: 3000pcs. Polarisation: bipolar Frequency: 150MHz Type of transistor: PNP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAS21T-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT523 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP7361C-18SP-13 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1% Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...85°C Output current: 1A Voltage drop: 0.7V Output voltage: 1.8V Input voltage: 2.2...6V Tolerance: ±1% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7361C Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B240AE-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape Case: SMA Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 93pF Leakage current: 15mA Max. forward voltage: 0.5V Load current: 2A Max. off-state voltage: 40V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B240AQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape Application: automotive industry Case: SMA Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 200pF Leakage current: 20mA Max. forward voltage: 0.5V Load current: 2A Max. off-state voltage: 40V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| B240AF-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 40V; 2A; reel,tape Case: SMA flat Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 93pF Leakage current: 16mA Max. forward voltage: 0.5V Load current: 2A Max. off-state voltage: 40V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ZVN2106A | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.45A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 959 шт: термін постачання 21-30 дні (днів) |
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ZVN2106ASTZ | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.45A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 1603 шт: термін постачання 21-30 дні (днів) |
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| FMMT618TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 2.5A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 6A Current gain: 100...450 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100...140MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AL5810D-13 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; LED driver; DPAK,TO252; 200mA; Ch: 1; 2÷60VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: DPAK; TO252 Output current: 0.2A Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAJ15CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 24505 шт: термін постачання 21-30 дні (днів) |
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B160-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 110pF |
на замовлення 5592 шт: термін постачання 21-30 дні (днів) |
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BC807-25W-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT323 Current gain: 100...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 1A Quantity in set/package: 3000pcs. |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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D5V0L1B2S9-7 | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6V; bidirectional; SOD923; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6V Semiconductor structure: bidirectional Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Case: SOD923 |
на замовлення 5082 шт: термін постачання 21-30 дні (днів) |
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DMN3024SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 60A Drain-source voltage: 30V Drain current: 8.5A Gate charge: 10.5nC On-state resistance: 33mΩ Power dissipation: 1.4W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Case: PowerDI3333-8 Kind of channel: enhancement |
на замовлення 2038 шт: термін постачання 21-30 дні (днів) |
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DFLZ5V1-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 5.1V; SMD; reel,tape; PowerDI®123; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: reel; tape Case: PowerDI®123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 313 шт: термін постачання 21-30 дні (днів) |
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GBJ2508-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 350A Electrical mounting: THT Version: flat Leads: flat pin Case: GBJ Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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| 74HCT138T16-13 | DIODES INCORPORATED |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6 Type of integrated circuit: digital Case: TSSOP16 Family: HCT Kind of output: push-pull Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Number of channels: 8 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder Number of inputs: 6 Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74HCT138S16-13 | DIODES INCORPORATED |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6 Type of integrated circuit: digital Case: SO16 Family: HCT Kind of output: push-pull Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...150°C Number of channels: 8 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder Number of inputs: 6 Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ64CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 71.1...81.8V Max. forward impulse current: 5.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
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SMBJ64A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 71.1...81.8V Max. forward impulse current: 5.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMAJ16CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 1541 шт: термін постачання 21-30 дні (днів) |
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| SMAJ16CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP7375-50W5-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT25; SMD Manufacturer series: AP7375 Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT25 Output current: 0.35A Voltage drop: 0.35V Number of channels: 1 Tolerance: ±2% Input voltage: 3...45V Output voltage: 5V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BAS21TM-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: triple independent Case: SOT26 Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAS21TWQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 10A Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AS431ARTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT89 Operating temperature: -40...125°C Operating voltage: 2.5...36V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 343 шт: термін постачання 21-30 дні (днів) |
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ZVN2106GTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.7A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 635 шт: термін постачання 21-30 дні (днів) |
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SMBJ48CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...61.3V Max. forward impulse current: 7.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
AP7370-33SA-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 3.3V Output current: 0.3A Case: SOT23 Mounting: SMD Manufacturer series: AP7370 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1...2% Number of channels: 1 Input voltage: 3.2...18V |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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| BZT52C5V1LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 5.1V Mounting: SMD Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode Tolerance: ±6% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BZT52C5V1TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Tolerance: ±6% Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BCV47QTC | DIODES INCORPORATED |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN Type of transistor: NPN |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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| MMBF170Q-13-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 0.8A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5.3Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBF170Q-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Pulsed drain current: 0.8A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5.3Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBF170-13-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BZX84C15-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 2499 шт: термін постачання 21-30 дні (днів) |
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BZX84C15-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 4242 шт: термін постачання 21-30 дні (днів) |
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BZX84C15W-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
на замовлення 2323 шт: термін постачання 21-30 дні (днів) |
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BZX84C15Q-13-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BZX84C15Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BZX84C15S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
товару немає в наявності |
В кошику од. на суму грн. |
| ZRB500F03TA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 5V; ±3%; SOT23; reel,tape; 15mA
Type of integrated circuit: voltage reference source
Reference voltage: 5V
Tolerance: ±3%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 15mA
на замовлення 193 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.53 грн |
| 11+ | 40.32 грн |
| 25+ | 36.90 грн |
| 30+ | 36.24 грн |
| 100+ | 32.49 грн |
| DMTH4M70SPGWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 145.93 грн |
| ZVP4525GQTA |
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на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 27.69 грн |
| SMCJ85CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DMN2710UT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.41 грн |
| SMAJ150A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 1.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 1.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2885 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.58 грн |
| 29+ | 14.20 грн |
| 34+ | 12.24 грн |
| 44+ | 9.31 грн |
| 100+ | 5.81 грн |
| 500+ | 4.23 грн |
| GBU808-01-LS |
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 320+ | 20.22 грн |
| B140-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Capacitance: 110pF
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 40V
на замовлення 1347 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.31 грн |
| 49+ | 8.49 грн |
| 62+ | 6.61 грн |
| 100+ | 5.84 грн |
| 500+ | 4.21 грн |
| 1000+ | 3.55 грн |
| 1300+ | 3.31 грн |
| GBU606 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: GBU
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.28 грн |
| 10+ | 82.53 грн |
| DMNH6010SCTB-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; Idm: 532A; 5W; TO263AB
Mounting: SMD
Case: TO263AB
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 10mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 94A
Pulsed drain current: 532A
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ12CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 135000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.52 грн |
| DMG2302UK-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 949 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.07 грн |
| 46+ | 8.90 грн |
| 67+ | 6.17 грн |
| 100+ | 5.29 грн |
| 500+ | 3.92 грн |
| DMN3065LW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Power dissipation: 0.77W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
на замовлення 451 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.01 грн |
| 23+ | 17.88 грн |
| 50+ | 12.49 грн |
| 100+ | 10.69 грн |
| 1SMB5929B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 1321 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.49 грн |
| 22+ | 19.26 грн |
| 25+ | 16.98 грн |
| 100+ | 10.86 грн |
| 500+ | 8.00 грн |
| 1000+ | 7.10 грн |
| DMN3042L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 1050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.19 грн |
| 43+ | 9.63 грн |
| 50+ | 8.16 грн |
| 75+ | 5.47 грн |
| 100+ | 4.98 грн |
| SMBJ18A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ18AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷23.3V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| S5BC-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 1.15V
Load current: 5A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Case: SMC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Max. forward voltage: 1.15V
Load current: 5A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Case: SMC
на замовлення 1923 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.25 грн |
| 22+ | 18.69 грн |
| 50+ | 14.94 грн |
| 100+ | 13.55 грн |
| 500+ | 10.77 грн |
| 700+ | 10.20 грн |
| 1000+ | 10.12 грн |
| DPBT8105-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Current gain: 30...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.6W
Collector current: 1A
Pulsed collector current: 2A
Current gain: 30...300
Collector-emitter voltage: 60V
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Frequency: 150MHz
Type of transistor: PNP
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| BAS21T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT523
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| AP7361C-18SP-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 1A
Voltage drop: 0.7V
Output voltage: 1.8V
Input voltage: 2.2...6V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7361C
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 1A
Voltage drop: 0.7V
Output voltage: 1.8V
Input voltage: 2.2...6V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7361C
Integrated circuit features: shutdown mode control input
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| B240AE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 93pF
Leakage current: 15mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 93pF
Leakage current: 15mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| B240AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape
Application: automotive industry
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape
Application: automotive industry
Case: SMA
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| B240AF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 2A; reel,tape
Case: SMA flat
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 93pF
Leakage current: 16mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 2A; reel,tape
Case: SMA flat
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 93pF
Leakage current: 16mA
Max. forward voltage: 0.5V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| ZVN2106A |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 959 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.07 грн |
| 14+ | 30.94 грн |
| 100+ | 24.00 грн |
| 200+ | 23.35 грн |
| ZVN2106ASTZ |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 1603 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.62 грн |
| 13+ | 32.98 грн |
| 100+ | 23.75 грн |
| FMMT618TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Current gain: 100...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 2.5A; 806mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 6A
Current gain: 100...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...140MHz
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| AL5810D-13 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; DPAK,TO252; 200mA; Ch: 1; 2÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: DPAK; TO252
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; DPAK,TO252; 200mA; Ch: 1; 2÷60VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: DPAK; TO252
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2...60V DC
Kind of package: reel; tape
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| SMAJ15CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 24505 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.58 грн |
| 30+ | 13.71 грн |
| 35+ | 11.75 грн |
| 56+ | 7.35 грн |
| 100+ | 6.12 грн |
| 500+ | 4.65 грн |
| 1000+ | 4.57 грн |
| B160-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
на замовлення 5592 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.79 грн |
| 66+ | 6.20 грн |
| 81+ | 5.09 грн |
| 100+ | 4.64 грн |
| 500+ | 3.71 грн |
| 1000+ | 3.35 грн |
| 3000+ | 2.80 грн |
| 5000+ | 2.57 грн |
| BC807-25W-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Quantity in set/package: 3000pcs.
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.94 грн |
| 46+ | 9.06 грн |
| 100+ | 5.16 грн |
| 500+ | 3.59 грн |
| 1000+ | 3.13 грн |
| 3000+ | 2.56 грн |
| D5V0L1B2S9-7 |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: SOD923
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: SOD923
на замовлення 5082 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.98 грн |
| 45+ | 9.24 грн |
| 100+ | 4.60 грн |
| 500+ | 3.07 грн |
| 2500+ | 2.90 грн |
| 5000+ | 2.56 грн |
| DMN3024SFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 8.5A
Gate charge: 10.5nC
On-state resistance: 33mΩ
Power dissipation: 1.4W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 60A; 1.4W
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain-source voltage: 30V
Drain current: 8.5A
Gate charge: 10.5nC
On-state resistance: 33mΩ
Power dissipation: 1.4W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
на замовлення 2038 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.01 грн |
| 18+ | 23.59 грн |
| 100+ | 18.28 грн |
| 500+ | 15.10 грн |
| 1000+ | 14.12 грн |
| DFLZ5V1-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; PowerDI®123; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 313 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.31 грн |
| 48+ | 8.57 грн |
| 100+ | 7.84 грн |
| GBJ2508-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Leads: flat pin
Case: GBJ
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 124.89 грн |
| 10+ | 105.30 грн |
| 15+ | 97.95 грн |
| 74HCT138T16-13 |
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Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Case: TSSOP16
Family: HCT
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of inputs: 6
Technology: CMOS; TTL
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Case: TSSOP16
Family: HCT
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of inputs: 6
Technology: CMOS; TTL
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| 74HCT138S16-13 |
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Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Case: SO16
Family: HCT
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of inputs: 6
Technology: CMOS; TTL
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Case: SO16
Family: HCT
Kind of output: push-pull
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of inputs: 6
Technology: CMOS; TTL
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| SMBJ64CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 289 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.98 грн |
| 25+ | 16.33 грн |
| 29+ | 14.37 грн |
| 100+ | 9.14 грн |
| SMBJ64A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMAJ16CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1541 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.79 грн |
| 53+ | 7.84 грн |
| 54+ | 7.59 грн |
| 100+ | 6.42 грн |
| 500+ | 5.62 грн |
| 1000+ | 5.29 грн |
| SMAJ16CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| AP7375-50W5-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT25; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT25
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.35A; SOT25; SMD
Manufacturer series: AP7375
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT25
Output current: 0.35A
Voltage drop: 0.35V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...45V
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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| BAS21TM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT26; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT26
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAS21TWQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| AS431ARTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT89; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT89
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 343 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.82 грн |
| 36+ | 11.59 грн |
| 40+ | 10.20 грн |
| 48+ | 8.65 грн |
| 100+ | 7.02 грн |
| 250+ | 6.45 грн |
| ZVN2106GTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 635 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.57 грн |
| 8+ | 53.22 грн |
| 10+ | 45.79 грн |
| 25+ | 36.08 грн |
| 50+ | 30.20 грн |
| 100+ | 25.88 грн |
| 250+ | 23.35 грн |
| SMBJ48CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| AP7370-33SA-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7370
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT23
Mounting: SMD
Manufacturer series: AP7370
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 3.2...18V
на замовлення 74 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.26 грн |
| 12+ | 36.41 грн |
| 14+ | 29.88 грн |
| BZT52C5V1LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Tolerance: ±6%
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.1V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Tolerance: ±6%
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| BZT52C5V1TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Tolerance: ±6%
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Tolerance: ±6%
Application: automotive industry
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| BCV47QTC |
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Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD Darlington transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.71 грн |
| MMBF170Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| MMBF170Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 0.8A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| MMBF170-13-F |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.76 грн |
| BZX84C15-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 2499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.03 грн |
| 136+ | 3.02 грн |
| 175+ | 2.33 грн |
| 500+ | 1.89 грн |
| 1000+ | 1.69 грн |
| 1500+ | 1.58 грн |
| BZX84C15-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 4242 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 3.56 грн |
| 280+ | 1.48 грн |
| 500+ | 1.31 грн |
| 2500+ | 1.22 грн |
| BZX84C15W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
на замовлення 2323 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.58 грн |
| 33+ | 12.73 грн |
| 38+ | 10.77 грн |
| 100+ | 5.80 грн |
| 500+ | 4.08 грн |
| 1000+ | 3.63 грн |
| BZX84C15Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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| BZX84C15Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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| BZX84C15S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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