Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78507) > Сторінка 1209 з 1309
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| DMT5015LFDF-7 | DIODES INCORPORATED | DMT5015LFDF-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6002LPS-13 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 100A On-state resistance: 3mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 130.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 16A On-state resistance: 4.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 78.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DMT6004SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB Case: TO220AB Kind of package: tube Mounting: THT Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 113W Polarisation: unipolar Gate charge: 95.4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 180A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DMT6004SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 18A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 95.4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6005LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 14A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 1.98W Polarisation: unipolar Gate charge: 48.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6005LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 14A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 1.98W Polarisation: unipolar Gate charge: 48.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A кількість в упаковці: 2000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6005LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 14.7A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 47.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 500A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6005LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 1.7W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 13.5A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 47.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6006LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 71A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 34.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 350A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DMT6006LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11.7A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 2.08W Polarisation: unipolar Gate charge: 34.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 110A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DMT6006SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 13A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 2.45W Polarisation: unipolar Gate charge: 27.9nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 390A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6007LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 12A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DMT6007LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Drain-source voltage: 60V Drain current: 70A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 1987 шт: термін постачання 14-21 дні (днів) |
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| DMT6007LFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 12A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6007LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 12A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A кількість в упаковці: 2000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6008LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 50.4nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 80A кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6008LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 50.4nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 80A кількість в упаковці: 2000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6009LCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3 Case: TO220-3 Kind of package: tube Mounting: THT Drain-source voltage: 60V Drain current: 29.8A On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 80A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6009LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 9A On-state resistance: 11.7mΩ Type of transistor: N-MOSFET Power dissipation: 2.08W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 90A кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6009LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 34A; Idm: 90A; 19.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 34A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 19.2W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 90A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6009LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 10.6A On-state resistance: 12.8mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 90A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6009LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 9.1A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 160A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DMT6009LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11.5A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DMT6010LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 25A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6010LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A кількість в упаковці: 2000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6010LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 11A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 125A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DMT6010LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 2W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 13.5A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 41.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DMT6010SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 98A; Idm: 160A; 104W; TO220-3 Case: TO220-3 Kind of package: tube Mounting: THT Drain-source voltage: 60V Drain current: 98A On-state resistance: 7.2mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 36.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 160A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DMT6011LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 8.5A On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 85A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DMT6012LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 7.6A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 13.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A кількість в упаковці: 10000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6012LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W Case: U-DFN2020-6 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 7.6A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 13.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6012LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W Power dissipation: 1.95W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 170A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 34.7A On-state resistance: 15mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6012LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Gate-source voltage: ±20V Pulsed drain current: 170A Drain-source voltage: 60V Drain current: 34.7A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 1.95W Polarisation: unipolar Gate charge: 22.2nC Kind of channel: enhancement кількість в упаковці: 2000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6012LPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 10.5A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 120A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DMT6012LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 8.4A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.84W Polarisation: unipolar Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 65A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DMT6013LFDF-7 | DIODES INCORPORATED |
DMT6013LFDF-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DMT6013LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 6.5A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DMT6015LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 7.6A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 18.9nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 60A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6015LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 8A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.8W Polarisation: unipolar Gate charge: 15.7nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 127A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6015LPS-13 | DIODES INCORPORATED |
DMT6015LPS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6015LSS-13 | DIODES INCORPORATED |
DMT6015LSS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6016LFDF-13 | DIODES INCORPORATED |
DMT6016LFDF-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6016LFDF-7 | DIODES INCORPORATED |
DMT6016LFDF-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6016LPS-13 | DIODES INCORPORATED |
DMT6016LPS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6016LSS-13 | DIODES INCORPORATED |
DMT6016LSS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6017LFDF-13 | DIODES INCORPORATED |
DMT6017LFDF-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6017LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 65V Drain current: 29A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.12W Polarisation: unipolar Gate charge: 15.3nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 140A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6017LSS-13 | DIODES INCORPORATED |
DMT6017LSS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6018LDR-13 | DIODES INCORPORATED |
DMT6018LDR-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6018LDR-7 | DIODES INCORPORATED |
DMT6018LDR-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT6030LFDF-13 | DIODES INCORPORATED |
DMT6030LFDF-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT616MLSS-13 | DIODES INCORPORATED |
DMT616MLSS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT64M2LPSW-13 | DIODES INCORPORATED |
DMT64M2LPSW-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT64M8LCG-13 | DIODES INCORPORATED | DMT64M8LCG-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT64M8LSS-13 | DIODES INCORPORATED | DMT64M8LSS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT67M8LCG-13 | DIODES INCORPORATED | DMT67M8LCG-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT67M8LCG-7 | DIODES INCORPORATED | DMT67M8LCG-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT67M8LCGQ-7 | DIODES INCORPORATED | DMT67M8LCGQ-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| DMT67M8LK3-13 | DIODES INCORPORATED | DMT67M8LK3-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. |
| DMT5015LFDF-7 |
Виробник: DIODES INCORPORATED
DMT5015LFDF-7 SMD N channel transistors
DMT5015LFDF-7 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6002LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 130.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 130.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6004LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 78.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 16A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 78.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6004SCT |
|
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 180A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Mounting: THT
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 180A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6004SPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 18A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6005LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6005LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.98W
Polarisation: unipolar
Gate charge: 48.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
кількість в упаковці: 2000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6005LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14.7A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 47.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 500A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 14.7A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 47.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 500A
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6005LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 1.7W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 13.5A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 47.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 1.7W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 13.5A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 47.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6006LK3-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 71A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 350A
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6006LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 34.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 110A
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6006SPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.45W
Polarisation: unipolar
Gate charge: 27.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 390A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 13A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.45W
Polarisation: unipolar
Gate charge: 27.9nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 390A
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6007LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6007LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Drain-source voltage: 60V
Drain current: 70A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Drain-source voltage: 60V
Drain current: 70A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 1987 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.84 грн |
| 10+ | 71.35 грн |
| 22+ | 48.98 грн |
| 60+ | 46.37 грн |
| 500+ | 44.49 грн |
| DMT6007LFGQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6007LFGQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 2000 шт
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| DMT6008LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
кількість в упаковці: 3000 шт
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од. на суму грн.
| DMT6008LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 50.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
кількість в упаковці: 2000 шт
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| DMT6009LCT |
|
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Mounting: THT
Drain-source voltage: 60V
Drain current: 29.8A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29.8A; Idm: 80A; 2.2W; TO220-3
Case: TO220-3
Kind of package: tube
Mounting: THT
Drain-source voltage: 60V
Drain current: 29.8A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
кількість в упаковці: 1 шт
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| DMT6009LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 9A
On-state resistance: 11.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 90A; 2.08W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 9A
On-state resistance: 11.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.08W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
кількість в упаковці: 3000 шт
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В кошику
од. на суму грн.
| DMT6009LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; Idm: 90A; 19.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 34A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 19.2W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34A; Idm: 90A; 19.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 34A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 19.2W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
кількість в упаковці: 1 шт
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| DMT6009LK3-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10.6A
On-state resistance: 12.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10.6A
On-state resistance: 12.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 90A
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| DMT6009LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 9.1A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 160A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9.1A; Idm: 160A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 9.1A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 160A
кількість в упаковці: 2500 шт
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од. на суму грн.
| DMT6009LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11.5A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.5A; Idm: 60A; 1.6W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11.5A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 33.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 2500 шт
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од. на суму грн.
| DMT6010LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 25A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 25A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6010LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 2000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6010LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 125A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 125A; 2.2W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 11A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 125A
кількість в упаковці: 2500 шт
товару немає в наявності
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од. на суму грн.
| DMT6010LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 2W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 13.5A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.5A; Idm: 80A; 2W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 13.5A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 41.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 2500 шт
товару немає в наявності
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од. на суму грн.
| DMT6010SCT |
|
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 98A; Idm: 160A; 104W; TO220-3
Case: TO220-3
Kind of package: tube
Mounting: THT
Drain-source voltage: 60V
Drain current: 98A
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 36.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 98A; Idm: 160A; 104W; TO220-3
Case: TO220-3
Kind of package: tube
Mounting: THT
Drain-source voltage: 60V
Drain current: 98A
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 36.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
кількість в упаковці: 1 шт
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од. на суму грн.
| DMT6011LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 8.5A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 85A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 8.5A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 85A
кількість в упаковці: 1 шт
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од. на суму грн.
| DMT6012LFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 13.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 13.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 10000 шт
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| DMT6012LFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 13.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 13.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 3000 шт
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од. на суму грн.
| DMT6012LFV-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Power dissipation: 1.95W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 170A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 34.7A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Power dissipation: 1.95W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 170A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 34.7A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
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од. на суму грн.
| DMT6012LFV-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 170A
Drain-source voltage: 60V
Drain current: 34.7A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.95W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Gate-source voltage: ±20V
Pulsed drain current: 170A
Drain-source voltage: 60V
Drain current: 34.7A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.95W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
кількість в упаковці: 2000 шт
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од. на суму грн.
| DMT6012LPSW-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10.5A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 10.5A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6012LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 8.4A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.84W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 65A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.4A; Idm: 65A; 1.84W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 8.4A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.84W
Polarisation: unipolar
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 65A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6013LFDF-7 |
|
Виробник: DIODES INCORPORATED
DMT6013LFDF-7 SMD N channel transistors
DMT6013LFDF-7 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6013LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 6.5A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6015LFV-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 18.9nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 7.6A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 18.9nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6015LFVW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 15.7nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 127A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.8W
Polarisation: unipolar
Gate charge: 15.7nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 127A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6015LPS-13 |
|
Виробник: DIODES INCORPORATED
DMT6015LPS-13 SMD N channel transistors
DMT6015LPS-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6015LSS-13 |
|
Виробник: DIODES INCORPORATED
DMT6015LSS-13 SMD N channel transistors
DMT6015LSS-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6016LFDF-13 |
|
Виробник: DIODES INCORPORATED
DMT6016LFDF-13 SMD N channel transistors
DMT6016LFDF-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6016LFDF-7 |
|
Виробник: DIODES INCORPORATED
DMT6016LFDF-7 SMD N channel transistors
DMT6016LFDF-7 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6016LPS-13 |
|
Виробник: DIODES INCORPORATED
DMT6016LPS-13 SMD N channel transistors
DMT6016LPS-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6016LSS-13 |
|
Виробник: DIODES INCORPORATED
DMT6016LSS-13 SMD N channel transistors
DMT6016LSS-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6017LFDF-13 |
|
Виробник: DIODES INCORPORATED
DMT6017LFDF-13 SMD N channel transistors
DMT6017LFDF-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6017LFV-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Gate charge: 15.3nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 140A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Gate charge: 15.3nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 140A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT6017LSS-13 |
|
Виробник: DIODES INCORPORATED
DMT6017LSS-13 SMD N channel transistors
DMT6017LSS-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6018LDR-13 |
|
Виробник: DIODES INCORPORATED
DMT6018LDR-13 SMD N channel transistors
DMT6018LDR-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6018LDR-7 |
|
Виробник: DIODES INCORPORATED
DMT6018LDR-7 SMD N channel transistors
DMT6018LDR-7 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT6030LFDF-13 |
|
Виробник: DIODES INCORPORATED
DMT6030LFDF-13 SMD N channel transistors
DMT6030LFDF-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT616MLSS-13 |
|
Виробник: DIODES INCORPORATED
DMT616MLSS-13 SMD N channel transistors
DMT616MLSS-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT64M2LPSW-13 |
|
Виробник: DIODES INCORPORATED
DMT64M2LPSW-13 SMD N channel transistors
DMT64M2LPSW-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT64M8LCG-13 |
Виробник: DIODES INCORPORATED
DMT64M8LCG-13 SMD N channel transistors
DMT64M8LCG-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT64M8LSS-13 |
Виробник: DIODES INCORPORATED
DMT64M8LSS-13 SMD N channel transistors
DMT64M8LSS-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT67M8LCG-13 |
Виробник: DIODES INCORPORATED
DMT67M8LCG-13 SMD N channel transistors
DMT67M8LCG-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT67M8LCG-7 |
Виробник: DIODES INCORPORATED
DMT67M8LCG-7 SMD N channel transistors
DMT67M8LCG-7 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT67M8LCGQ-7 |
Виробник: DIODES INCORPORATED
DMT67M8LCGQ-7 SMD N channel transistors
DMT67M8LCGQ-7 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT67M8LK3-13 |
Виробник: DIODES INCORPORATED
DMT67M8LK3-13 SMD N channel transistors
DMT67M8LK3-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.