Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72981) > Сторінка 1209 з 1217
| Фото | Назва | Виробник | Інформація |
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ZXTN25020DFHTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 4.5A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 215MHz |
на замовлення 2236 шт: термін постачання 14-30 дні (днів) |
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ZXTP25020DFLTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1.5A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 290MHz |
на замовлення 670 шт: термін постачання 14-30 дні (днів) |
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ZTX651STZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 1.5W Case: TO92 Current gain: 40...300 Mounting: THT Kind of package: Ammo Pack Frequency: 175MHz |
на замовлення 1959 шт: термін постачання 14-30 дні (днів) |
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ZTX651 | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 1.5W Case: TO92 Current gain: 40...300 Mounting: THT Kind of package: bulk Frequency: 175MHz Quantity in set/package: 4000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ZTX651QSTZ | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 1.5W Case: TO92 Current gain: 40...300 Mounting: THT Kind of package: Ammo Pack Frequency: 175MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KBJ402G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZVN4206A | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.6A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Pulsed drain current: 8A |
на замовлення 1850 шт: термін постачання 14-30 дні (днів) |
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ZVN4206GTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 794 шт: термін постачання 14-30 дні (днів) |
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ZVN4206AVSTZ | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.6A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement Pulsed drain current: 8A |
на замовлення 748 шт: термін постачання 14-30 дні (днів) |
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ZVN4210A | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.45A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.45A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 3600 шт: термін постачання 14-30 дні (днів) |
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AL5809-20QP1-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; current regulator,LED driver; PowerDI®123; 20mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: PowerDI®123 Output current: 20mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...125°C Operating voltage: 2.5...60V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MBRB20200CT-13 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.89V Max. forward impulse current: 170A Kind of package: reel; tape Leakage current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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VN10LP | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.27A; 0.625W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: bulk Kind of channel: enhancement Case: TO92 Drain current: 0.27A Power dissipation: 0.625W On-state resistance: 7.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
на замовлення 1078 шт: термін постачання 14-30 дні (днів) |
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VN10LFTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.15A; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Case: SOT23 Drain current: 0.15A Power dissipation: 0.33W On-state resistance: 7.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
на замовлення 1275 шт: термін постачання 14-30 дні (днів) |
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| VN10LPSTZ | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBU25KH | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Electrical mounting: THT Kind of package: tube Load current: 25A Max. forward impulse current: 350A Max. off-state voltage: 0.8kV Features of semiconductor devices: glass passivated Version: flat Leads: flat pin Case: GBU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BZT52HC11WF-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.83W; 11V; SMD; SOD123F; reel,tape; single diode Mounting: SMD Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.83W Zener voltage: 11V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FMMT718TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1.5A Power dissipation: 0.625W Case: SOT23 Mounting: SMD Frequency: 180MHz Pulsed collector current: 6A Current gain: 15...450 Kind of package: reel; tape Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FMMT718TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1.5A Power dissipation: 0.625W Case: SOT23 Mounting: SMD Frequency: 180MHz Pulsed collector current: 6A Current gain: 15...450 Kind of package: reel; tape Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FMMT718TC | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1.5A Power dissipation: 0.625W Case: SOT23-3 Mounting: SMD Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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df06m | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 50A Case: DFM Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2022LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A On-state resistance: 13mΩ Power dissipation: 2.5W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
на замовлення 2301 шт: термін постачання 14-30 дні (днів) |
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DMP2040USS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -30A; 1.9W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -20V Drain current: -5.5A Gate charge: 19nC On-state resistance: 52mΩ Power dissipation: 1.9W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
на замовлення 2368 шт: термін постачання 14-30 дні (днів) |
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DMP2037U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -38A Drain-source voltage: -20V Drain current: -4.8A Gate charge: 14.5nC On-state resistance: 43mΩ Power dissipation: 1.6W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2045U-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3.5A Gate charge: 6.8nC On-state resistance: 90mΩ Power dissipation: 1.2W Gate-source voltage: ±8V Kind of package: 13 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2070U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -20A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -20V Drain current: -3.7A Gate charge: 17.8nC On-state resistance: 74mΩ Power dissipation: 1.4W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2004TK-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW Mounting: SMD Case: SOT523 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -0.75A Drain-source voltage: -20V Drain current: -310mA Gate charge: 970pC On-state resistance: 2.4mΩ Power dissipation: 0.32W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2004WK-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW Mounting: SMD Case: SOT323 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -1.4A Drain-source voltage: -20V Drain current: -0.4A On-state resistance: 2mΩ Power dissipation: 0.25W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2036UVT-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26 Mounting: SMD Case: TSOT26 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -40A Drain-source voltage: -20V Drain current: -5A Gate charge: 20.5nC On-state resistance: 58mΩ Power dissipation: 1W Gate-source voltage: ±8V Kind of package: 13 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2036UVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26 Mounting: SMD Case: TSOT26 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -40A Drain-source voltage: -20V Drain current: -5A Gate charge: 20.5nC On-state resistance: 58mΩ Power dissipation: 1W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2040UVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -40A; 1.5W; TSOT26 Mounting: SMD Case: TSOT26 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -40A Drain-source voltage: -20V Drain current: -4.5A Gate charge: 19nC On-state resistance: 52mΩ Power dissipation: 1.5W Gate-source voltage: ±12V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2045UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3.5A Gate charge: 6.8nC On-state resistance: 90mΩ Power dissipation: 1.2W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DMP2075UFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -25A; 1.4W Mounting: SMD Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3A Gate charge: 15nC On-state resistance: 137mΩ Power dissipation: 1.4W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DMP2023UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 90mΩ Power dissipation: 0.73W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8007NHR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 250Hz; Pout: 3W; headphone driver,stereo Operating temperature: -20...125°C Mounting: SMD Output power: 3W Number of channels: 2 Voltage supply range: 2.5...5.5V DC Frequency: 250Hz Type of integrated circuit: audio amplifier Integrated circuit features: headphone driver; stereo Case: SSOP24 Amplifier class: D Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PAM8008DR | DIODES INCORPORATED |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 250Hz; Pout: 3W; Ch: 2; Amp.class: D; SOP16 Operating temperature: -20...125°C Mounting: SMD Output power: 3W Number of channels: 2 Voltage supply range: 2.5...5.5V DC Frequency: 250Hz Type of integrated circuit: audio amplifier Integrated circuit features: low distortion THD; low noise; stereo; thermal protection Case: SOP16 Amplifier class: D Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AP1084KG-13 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷3.3V; 5A; SMD Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape Case: TO263 Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Input voltage: -0.3...12V Output current: 5A Number of channels: 1 Tolerance: ±1% Output voltage: 1.25...3.3V Voltage drop: 1.4V Mounting: SMD |
на замовлення 229 шт: термін постачання 14-30 дні (днів) |
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74LVC2G34W6-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SOT26; LVC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: SOT26 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Number of channels: 2 Manufacturer series: LVC Technology: CMOS Kind of output: push-pull Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVC2G34DW-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SOT363; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: SOT363 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Number of channels: 2 Manufacturer series: LVC Technology: CMOS Kind of output: push-pull Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 74LVC2G34FW5-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 2; CMOS; SMD; X1-DFN1010-6; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Mounting: SMD Case: X1-DFN1010-6 Operating temperature: -40...150°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Number of channels: 2 Family: LVC Technology: CMOS Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74LVC2G34FX4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Mounting: SMD Case: X2-DFN1409-6 Operating temperature: -40...150°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Number of channels: 2 Family: LVC Technology: CMOS Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74LVC2G34FZ4-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Mounting: SMD Case: X2-DFN1410-6 Operating temperature: -40...150°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Number of channels: 2 Family: LVC Technology: CMOS Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DXTA92-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1W Case: SOT89 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ45CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 2969 шт: термін постачання 14-30 дні (днів) |
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SMAJ43CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 5.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 106 шт: термін постачання 14-30 дні (днів) |
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| FMMT449TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Pulsed collector current: 2A Current gain: 40...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ZXMN10A07FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.8A; 0.625W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.8A Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMN10A07FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.8A; 0.625W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.8A Power dissipation: 0.625W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2846 шт: термін постачання 14-30 дні (днів) |
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BCP55TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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| AP2141MPG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD On-state resistance: 95mΩ Output current: 0.5A Number of channels: 1 Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Active logical level: low Case: MSOP8EP Kind of output: P-Channel Type of integrated circuit: power switch Mounting: SMD |
на замовлення 942 шт: термін постачання 14-30 дні (днів) |
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AP1539SDPG-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 4A; SMD Operating temperature: -20...85°C Output current: 4A Output voltage: 0.8...18V DC Input voltage: 3.6...18V DC Efficiency: 92% Frequency: 300kHz Kind of package: reel; tape Topology: buck Kind of integrated circuit: DC/DC converter Case: SOP-8L-DEP Type of integrated circuit: PMIC Mounting: SMD |
на замовлення 2456 шт: термін постачання 14-30 дні (днів) |
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AP7165-SPG-13 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 0.6A; SMD Manufacturer series: AP7165 Operating temperature: -40...85°C Voltage drop: 0.4V Output current: 0.6A Output voltage: 0.8...5V Number of channels: 1 Tolerance: ±2.5% Input voltage: 2.2...5.5V Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape Case: SO8-EP Type of integrated circuit: voltage regulator Mounting: SMD |
на замовлення 2491 шт: термін постачання 14-30 дні (днів) |
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AP7173-SPG-13 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1÷5.5V; 1.5A; SMD Manufacturer series: AP7173 Operating temperature: -40...85°C Voltage drop: 1.7V Output current: 1.5A Output voltage: 1...5.5V Number of channels: 1 Tolerance: ±2% Input voltage: 2.7...5.5V Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape Case: SO8-EP Type of integrated circuit: voltage regulator Mounting: SMD |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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AP8802SPG-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 8÷48VDC; 1A; SO8-EP; SMD; 700kHz; 92% Operating temperature: -40...105°C Output current: 1A Input voltage: 8...48V DC Efficiency: 92% Frequency: 700kHz Kind of package: reel; tape Topology: buck Kind of integrated circuit: DC/DC converter Case: SO8-EP Type of integrated circuit: PMIC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| AP2142MPG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD On-state resistance: 0.115Ω Output current: 0.5A Number of channels: 2 Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Active logical level: low Case: MSOP8EP Kind of output: P-Channel Type of integrated circuit: power switch Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AP2101MPG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD On-state resistance: 90mΩ Output current: 2A Number of channels: 1 Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Active logical level: low Case: MSOP8EP Kind of output: P-Channel Type of integrated circuit: power switch Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AP2111MPG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD On-state resistance: 90mΩ Output current: 2A Number of channels: 1 Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Active logical level: high Case: MSOP8EP Kind of output: P-Channel Type of integrated circuit: power switch Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AP2146MPG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD On-state resistance: 90mΩ Output current: 0.5A Number of channels: 2 Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Active logical level: low Case: MSOP8EP Kind of output: P-Channel Type of integrated circuit: power switch Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AP2151MPG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD On-state resistance: 95mΩ Output current: 0.5A Number of channels: 1 Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Active logical level: high Case: MSOP8EP Kind of output: P-Channel Type of integrated circuit: power switch Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| AP2152MPG-13 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD On-state resistance: 0.115Ω Output current: 0.5A Number of channels: 2 Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Active logical level: high Case: MSOP8EP Kind of output: P-Channel Type of integrated circuit: power switch Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| ZXTN25020DFHTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4.5A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4.5A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 215MHz
на замовлення 2236 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.37 грн |
| 12+ | 38.43 грн |
| 25+ | 25.99 грн |
| 100+ | 22.86 грн |
| 500+ | 19.81 грн |
| 1000+ | 19.13 грн |
| ZXTP25020DFLTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 290MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 290MHz
на замовлення 670 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 44.67 грн |
| 14+ | 32.17 грн |
| 16+ | 27.17 грн |
| 100+ | 14.90 грн |
| 500+ | 12.87 грн |
| ZTX651STZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
на замовлення 1959 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.13 грн |
| 10+ | 47.91 грн |
| 100+ | 31.57 грн |
| 500+ | 26.07 грн |
| ZTX651 |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: bulk
Frequency: 175MHz
Quantity in set/package: 4000pcs.
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: bulk
Frequency: 175MHz
Quantity in set/package: 4000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| ZTX651QSTZ |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Current gain: 40...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 175MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| KBJ402G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| ZVN4206A |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: 8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Pulsed drain current: 8A
на замовлення 1850 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.84 грн |
| 8+ | 57.05 грн |
| 10+ | 49.94 грн |
| 50+ | 34.88 грн |
| 100+ | 29.97 грн |
| 350+ | 24.21 грн |
| ZVN4206GTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 794 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.07 грн |
| 10+ | 55.02 грн |
| 50+ | 43.51 грн |
| 100+ | 38.77 грн |
| 250+ | 32.42 грн |
| 500+ | 27.60 грн |
| ZVN4206AVSTZ |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Pulsed drain current: 8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Pulsed drain current: 8A
на замовлення 748 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.84 грн |
| 11+ | 40.63 грн |
| 100+ | 28.78 грн |
| 200+ | 26.07 грн |
| 250+ | 25.23 грн |
| 500+ | 23.28 грн |
| ZVN4210A |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 3600 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.22 грн |
| 8+ | 57.39 грн |
| 10+ | 50.20 грн |
| 50+ | 36.65 грн |
| 100+ | 32.25 грн |
| 500+ | 27.51 грн |
| AL5809-20QP1-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 20mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 20mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 20mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 20mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MBRB20200CT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.89V
Max. forward impulse current: 170A
Kind of package: reel; tape
Leakage current: 10mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.89V
Max. forward impulse current: 170A
Kind of package: reel; tape
Leakage current: 10mA
товару немає в наявності
В кошику
од. на суму грн.
| VN10LP |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Case: TO92
Drain current: 0.27A
Power dissipation: 0.625W
On-state resistance: 7.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; 0.625W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Case: TO92
Drain current: 0.27A
Power dissipation: 0.625W
On-state resistance: 7.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
на замовлення 1078 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.22 грн |
| 10+ | 47.15 грн |
| 15+ | 43.34 грн |
| 50+ | 34.37 грн |
| 100+ | 30.39 грн |
| 200+ | 27.09 грн |
| 500+ | 24.80 грн |
| VN10LFTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Case: SOT23
Drain current: 0.15A
Power dissipation: 0.33W
On-state resistance: 7.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.15A; 0.33W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Case: SOT23
Drain current: 0.15A
Power dissipation: 0.33W
On-state resistance: 7.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
на замовлення 1275 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.40 грн |
| 16+ | 27.17 грн |
| 100+ | 18.71 грн |
| 500+ | 14.64 грн |
| 750+ | 13.97 грн |
| 1000+ | 13.37 грн |
| VN10LPSTZ |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
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| GBU25KH |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Electrical mounting: THT
Kind of package: tube
Load current: 25A
Max. forward impulse current: 350A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated
Version: flat
Leads: flat pin
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Electrical mounting: THT
Kind of package: tube
Load current: 25A
Max. forward impulse current: 350A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated
Version: flat
Leads: flat pin
Case: GBU
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| BZT52HC11WF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; SOD123F; reel,tape; single diode
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 11V
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; SOD123F; reel,tape; single diode
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.83W
Zener voltage: 11V
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| FMMT718TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Frequency: 180MHz
Pulsed collector current: 6A
Current gain: 15...450
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Frequency: 180MHz
Pulsed collector current: 6A
Current gain: 15...450
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
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| FMMT718TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Frequency: 180MHz
Pulsed collector current: 6A
Current gain: 15...450
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.625W
Case: SOT23
Mounting: SMD
Frequency: 180MHz
Pulsed collector current: 6A
Current gain: 15...450
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
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| FMMT718TC |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.625W
Case: SOT23-3
Mounting: SMD
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1.5A; 625mW; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1.5A
Power dissipation: 0.625W
Case: SOT23-3
Mounting: SMD
Frequency: 180MHz
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| df06m |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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| DMP2022LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 13mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 13mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
на замовлення 2301 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.02 грн |
| 8+ | 56.38 грн |
| 10+ | 49.44 грн |
| 50+ | 34.28 грн |
| 100+ | 29.20 грн |
| 500+ | 21.25 грн |
| 1000+ | 19.05 грн |
| DMP2040USS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -30A; 1.9W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -20V
Drain current: -5.5A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.9W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -30A; 1.9W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -20V
Drain current: -5.5A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.9W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
на замовлення 2368 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.11 грн |
| 19+ | 23.45 грн |
| 50+ | 17.52 грн |
| 100+ | 15.32 грн |
| 500+ | 11.00 грн |
| 1000+ | 9.40 грн |
| DMP2037U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -38A
Drain-source voltage: -20V
Drain current: -4.8A
Gate charge: 14.5nC
On-state resistance: 43mΩ
Power dissipation: 1.6W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -38A
Drain-source voltage: -20V
Drain current: -4.8A
Gate charge: 14.5nC
On-state resistance: 43mΩ
Power dissipation: 1.6W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
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| DMP2045U-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 6.8nC
On-state resistance: 90mΩ
Power dissipation: 1.2W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 6.8nC
On-state resistance: 90mΩ
Power dissipation: 1.2W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
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| DMP2070U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -20A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 17.8nC
On-state resistance: 74mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -20A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 17.8nC
On-state resistance: 74mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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| DMP2004TK-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW
Mounting: SMD
Case: SOT523
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -0.75A
Drain-source voltage: -20V
Drain current: -310mA
Gate charge: 970pC
On-state resistance: 2.4mΩ
Power dissipation: 0.32W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW
Mounting: SMD
Case: SOT523
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -0.75A
Drain-source voltage: -20V
Drain current: -310mA
Gate charge: 970pC
On-state resistance: 2.4mΩ
Power dissipation: 0.32W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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| DMP2004WK-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -1.4A
Drain-source voltage: -20V
Drain current: -0.4A
On-state resistance: 2mΩ
Power dissipation: 0.25W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -1.4A
Drain-source voltage: -20V
Drain current: -0.4A
On-state resistance: 2mΩ
Power dissipation: 0.25W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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| DMP2036UVT-13 |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
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| DMP2036UVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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| DMP2040UVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -40A; 1.5W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.5W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -40A; 1.5W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.5W
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
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| DMP2045UQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 6.8nC
On-state resistance: 90mΩ
Power dissipation: 1.2W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 6.8nC
On-state resistance: 90mΩ
Power dissipation: 1.2W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Application: automotive industry
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| DMP2075UFDB-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -25A; 1.4W
Mounting: SMD
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 15nC
On-state resistance: 137mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -25A; 1.4W
Mounting: SMD
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 15nC
On-state resistance: 137mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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| DMP2023UFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 90mΩ
Power dissipation: 0.73W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Mounting: SMD
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 90mΩ
Power dissipation: 0.73W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
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| PAM8007NHR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; headphone driver,stereo
Operating temperature: -20...125°C
Mounting: SMD
Output power: 3W
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Frequency: 250Hz
Type of integrated circuit: audio amplifier
Integrated circuit features: headphone driver; stereo
Case: SSOP24
Amplifier class: D
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; headphone driver,stereo
Operating temperature: -20...125°C
Mounting: SMD
Output power: 3W
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Frequency: 250Hz
Type of integrated circuit: audio amplifier
Integrated circuit features: headphone driver; stereo
Case: SSOP24
Amplifier class: D
Kind of package: reel; tape
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| PAM8008DR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; Ch: 2; Amp.class: D; SOP16
Operating temperature: -20...125°C
Mounting: SMD
Output power: 3W
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Frequency: 250Hz
Type of integrated circuit: audio amplifier
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Case: SOP16
Amplifier class: D
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 3W; Ch: 2; Amp.class: D; SOP16
Operating temperature: -20...125°C
Mounting: SMD
Output power: 3W
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Frequency: 250Hz
Type of integrated circuit: audio amplifier
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Case: SOP16
Amplifier class: D
Kind of package: reel; tape
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| AP1084KG-13 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷3.3V; 5A; SMD
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: TO263
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Input voltage: -0.3...12V
Output current: 5A
Number of channels: 1
Tolerance: ±1%
Output voltage: 1.25...3.3V
Voltage drop: 1.4V
Mounting: SMD
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷3.3V; 5A; SMD
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: TO263
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Input voltage: -0.3...12V
Output current: 5A
Number of channels: 1
Tolerance: ±1%
Output voltage: 1.25...3.3V
Voltage drop: 1.4V
Mounting: SMD
на замовлення 229 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 56.52 грн |
| 25+ | 34.37 грн |
| 100+ | 27.77 грн |
| 74LVC2G34W6-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SOT26; LVC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT26
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Manufacturer series: LVC
Technology: CMOS
Kind of output: push-pull
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SOT26; LVC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT26
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Manufacturer series: LVC
Technology: CMOS
Kind of output: push-pull
Quiescent current: 40µA
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| 74LVC2G34DW-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SOT363; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT363
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Manufacturer series: LVC
Technology: CMOS
Kind of output: push-pull
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SOT363; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT363
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Manufacturer series: LVC
Technology: CMOS
Kind of output: push-pull
Quiescent current: 40µA
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| 74LVC2G34FW5-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X1-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Family: LVC
Technology: CMOS
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X1-DFN1010-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Family: LVC
Technology: CMOS
Kind of output: push-pull
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| 74LVC2G34FX4-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Family: LVC
Technology: CMOS
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1409-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Family: LVC
Technology: CMOS
Kind of output: push-pull
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| 74LVC2G34FZ4-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Family: LVC
Technology: CMOS
Kind of output: push-pull
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Family: LVC
Technology: CMOS
Kind of output: push-pull
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| DXTA92-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
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| SMAJ45CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2969 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.94 грн |
| 67+ | 6.35 грн |
| 100+ | 5.67 грн |
| 500+ | 5.33 грн |
| 1000+ | 4.99 грн |
| 2500+ | 4.57 грн |
| SMAJ43CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.7A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 106 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 20.06 грн |
| 28+ | 15.41 грн |
| 33+ | 13.21 грн |
| 100+ | 7.45 грн |
| FMMT449TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Pulsed collector current: 2A
Current gain: 40...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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| ZXMN10A07FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.8A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.8A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| ZXMN10A07FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.8A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.8A; 0.625W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 0.625W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2846 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.49 грн |
| 15+ | 29.46 грн |
| 50+ | 20.82 грн |
| 100+ | 17.95 грн |
| 500+ | 13.29 грн |
| 1000+ | 12.19 грн |
| BCP55TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 31 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.17 грн |
| 23+ | 19.13 грн |
| AP2141MPG-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 0.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 0.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
на замовлення 942 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.87 грн |
| 13+ | 34.88 грн |
| 25+ | 31.32 грн |
| 100+ | 27.51 грн |
| 250+ | 25.73 грн |
| 500+ | 24.46 грн |
| AP1539SDPG-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 4A; SMD
Operating temperature: -20...85°C
Output current: 4A
Output voltage: 0.8...18V DC
Input voltage: 3.6...18V DC
Efficiency: 92%
Frequency: 300kHz
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: SOP-8L-DEP
Type of integrated circuit: PMIC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.6÷18VDC; Uout: 0.8÷18VDC; 4A; SMD
Operating temperature: -20...85°C
Output current: 4A
Output voltage: 0.8...18V DC
Input voltage: 3.6...18V DC
Efficiency: 92%
Frequency: 300kHz
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: SOP-8L-DEP
Type of integrated circuit: PMIC
Mounting: SMD
на замовлення 2456 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.20 грн |
| 10+ | 48.00 грн |
| 25+ | 42.41 грн |
| 50+ | 39.19 грн |
| 100+ | 38.09 грн |
| AP7165-SPG-13 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 0.6A; SMD
Manufacturer series: AP7165
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Output voltage: 0.8...5V
Number of channels: 1
Tolerance: ±2.5%
Input voltage: 2.2...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: SO8-EP
Type of integrated circuit: voltage regulator
Mounting: SMD
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 0.6A; SMD
Manufacturer series: AP7165
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Output voltage: 0.8...5V
Number of channels: 1
Tolerance: ±2.5%
Input voltage: 2.2...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: SO8-EP
Type of integrated circuit: voltage regulator
Mounting: SMD
на замовлення 2491 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.76 грн |
| 15+ | 28.44 грн |
| 25+ | 25.48 грн |
| 100+ | 22.18 грн |
| 250+ | 20.82 грн |
| 500+ | 19.98 грн |
| AP7173-SPG-13 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1÷5.5V; 1.5A; SMD
Manufacturer series: AP7173
Operating temperature: -40...85°C
Voltage drop: 1.7V
Output current: 1.5A
Output voltage: 1...5.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.7...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: SO8-EP
Type of integrated circuit: voltage regulator
Mounting: SMD
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1÷5.5V; 1.5A; SMD
Manufacturer series: AP7173
Operating temperature: -40...85°C
Voltage drop: 1.7V
Output current: 1.5A
Output voltage: 1...5.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.7...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: SO8-EP
Type of integrated circuit: voltage regulator
Mounting: SMD
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.91 грн |
| 21+ | 20.91 грн |
| 25+ | 18.71 грн |
| 100+ | 16.25 грн |
| 250+ | 15.41 грн |
| 500+ | 14.90 грн |
| 2500+ | 14.81 грн |
| AP8802SPG-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷48VDC; 1A; SO8-EP; SMD; 700kHz; 92%
Operating temperature: -40...105°C
Output current: 1A
Input voltage: 8...48V DC
Efficiency: 92%
Frequency: 700kHz
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: SO8-EP
Type of integrated circuit: PMIC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 8÷48VDC; 1A; SO8-EP; SMD; 700kHz; 92%
Operating temperature: -40...105°C
Output current: 1A
Input voltage: 8...48V DC
Efficiency: 92%
Frequency: 700kHz
Kind of package: reel; tape
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: SO8-EP
Type of integrated circuit: PMIC
Mounting: SMD
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| AP2142MPG-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
On-state resistance: 0.115Ω
Output current: 0.5A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
On-state resistance: 0.115Ω
Output current: 0.5A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
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| AP2101MPG-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
On-state resistance: 90mΩ
Output current: 2A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
On-state resistance: 90mΩ
Output current: 2A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
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| AP2111MPG-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
On-state resistance: 90mΩ
Output current: 2A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
On-state resistance: 90mΩ
Output current: 2A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| AP2146MPG-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
On-state resistance: 90mΩ
Output current: 0.5A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
On-state resistance: 90mΩ
Output current: 0.5A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| AP2151MPG-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 0.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 1; P-Channel; SMD
On-state resistance: 95mΩ
Output current: 0.5A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| AP2152MPG-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
On-state resistance: 0.115Ω
Output current: 0.5A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 0.5A; Ch: 2; P-Channel; SMD
On-state resistance: 0.115Ω
Output current: 0.5A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.

























