Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73719) > Сторінка 1208 з 1229
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| APX811-29UG-7 | DIODES INCORPORATED |
 Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); push-pull Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: push-pull Active logical level: low Supply voltage: 1.1...5.5V DC Case: SOT143 Operating temperature: -40...85°C Mounting: SMD DC supply current: 30µA Maximum output current: 20mA Threshold on-voltage: 2.93V Kind of package: reel; tape Number of channels: 1 Delay time: 200ms Integrated circuit features: manual reset |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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BCX6825TA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 50...400 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100MHz |
на замовлення 161 шт: термін постачання 14-30 дні (днів) |
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BCX6825QTA | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 50...400 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 2A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AP7115-25SEG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT353; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7115 Input voltage: 2.5...5.5V Output current: 0.15A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Output voltage: 2.5V Kind of package: reel; tape Case: SOT353 Number of channels: 1 Tolerance: ±2% |
на замовлення 298 шт: термін постачання 14-30 дні (днів) |
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| AP7115-28SEG-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT353; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: AP7115 Input voltage: 2.5...5.5V Output current: 0.15A Type of integrated circuit: voltage regulator Voltage drop: 0.3V Operating temperature: -40...85°C Output voltage: 2.8V Kind of package: reel; tape Case: SOT353 Number of channels: 1 Tolerance: ±2% |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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BSS127SSN-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40mA; Idm: 0.16A; 0.61W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40mA Pulsed drain current: 0.16A Power dissipation: 0.61W Case: SC59 Gate-source voltage: ±20V On-state resistance: 190Ω Mounting: SMD Gate charge: 1.08nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2DA1213Y-13 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 1W; SOT89 Collector current: 2A Case: SOT89 Pulsed collector current: 2.5A Type of transistor: PNP Mounting: SMD Power dissipation: 1W Current gain: 20...240 Collector-emitter voltage: 50V Quantity in set/package: 2500pcs. Frequency: 160MHz Polarisation: bipolar Kind of package: reel; tape |
на замовлення 230 шт: термін постачання 14-30 дні (днів) |
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2DA1201Y-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 120V; 800mA; 1.5W; SOT89 Collector current: 0.8A Case: SOT89 Type of transistor: PNP Mounting: SMD Power dissipation: 1.5W Current gain: 120...240 Collector-emitter voltage: 120V Quantity in set/package: 1000pcs. Frequency: 160MHz Polarisation: bipolar Kind of package: reel; tape |
на замовлення 772 шт: термін постачання 14-30 дні (днів) |
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| 2DA1201YQTC | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 120V; 0.8A; 1.5W; SOT89 Collector current: 0.8A Case: SOT89 Pulsed collector current: 3A Type of transistor: PNP Mounting: SMD Power dissipation: 1.5W Current gain: 120...240 Collector-emitter voltage: 120V Quantity in set/package: 4000pcs. Frequency: 160MHz Application: automotive industry Polarisation: bipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DDA124EUQ-13-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; automotive industry Type of transistor: PNP x2 Mounting: SMD Application: automotive industry Polarisation: bipolar |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DDA124EH-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 22kΩ Collector current: 0.1A Case: SOT563 Type of transistor: PNP x2 Mounting: SMD Power dissipation: 0.15W Current gain: 56 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base resistor: 22kΩ Base-emitter resistor: 22kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DDA124EU-7-F | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 22kΩ Collector current: 0.1A Case: SOT363 Type of transistor: PNP x2 Mounting: SMD Power dissipation: 0.2W Current gain: 56 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base resistor: 22kΩ Base-emitter resistor: 22kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DDZ9687-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.3V; SMD; SOD123; reel,tape; single diode Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Case: SOD123 Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 4.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ADTC143ZUAQ-13 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 10000pcs. Power dissipation: 0.33W Application: automotive industry Current gain: 80 Frequency: 250MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ADTC143ZUAQ-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Power dissipation: 0.33W Application: automotive industry Current gain: 80 Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZRC400F01TA | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 4.096V; ±1%; SOT23; reel,tape; 5mA Type of integrated circuit: voltage reference source Reference voltage: 4.096V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 5mA |
на замовлення 2885 шт: термін постачання 14-30 дні (днів) |
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AP3783RCK6TR-G1 | DIODES INCORPORATED |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V Type of integrated circuit: PMIC Mounting: SMD Case: SOT26 Supply voltage: 25V Operating temperature: -40...105°C Kind of integrated circuit: DC/DC switcher; PWM controller Frequency: 80kHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMCJ15CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 61.5A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BC847BVN-7 | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Kind of transistor: complementary pair Quantity in set/package: 3000pcs. |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| BC847BVNQ-7 | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz Pulsed collector current: 0.2A Kind of transistor: complementary pair Quantity in set/package: 3000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BC847BVCQ-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RDBF310-13 | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 3A Max. forward impulse current: 100A Case: DBF Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.3V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBZ5240BTS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 10V; SMD; SOT363; reel,tape; triple independent Mounting: SMD Tolerance: ±5% Case: SOT363 Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 10V Semiconductor structure: triple independent |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMP26M1UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -56A Pulsed drain current: -110A Power dissipation: 3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 17mΩ Mounting: SMD Gate charge: 164nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| BC53-16PA-7 | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 520mW; U-DFN2020-3; 3000pcs. Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.52W Case: U-DFN2020-3 Pulsed collector current: 2A Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AP63200QWU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3.8...32V DC Output voltage: 1.2...12V DC Output current: 2A Case: TSOT26 Mounting: SMD Frequency: 0.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 93% Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DDTC123YUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Current gain: 33 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MURS140-13-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A Reverse recovery time: 50ns Mounting: SMD Max. forward impulse current: 35A Max. forward voltage: 1.25V Max. off-state voltage: 0.4kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Capacitance: 10pF Type of diode: rectifying |
на замовлення 2654 шт: термін постачання 14-30 дні (днів) |
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DMN2004K-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.45A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.9Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1175 шт: термін постачання 14-30 дні (днів) |
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| 2N7002VAC-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2N7002VC-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMP2200UDW-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363 Case: SOT363 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 0.6W Gate charge: 2.1nC Polarisation: unipolar Drain current: -0.7A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 1Ω |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
| DMP2200UDW-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
на замовлення 69000 шт: термін постачання 14-30 дні (днів) |
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| DMP2900UV-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Drain current: -680mA Gate charge: 0.7nC Power dissipation: 0.8W Gate-source voltage: ±6V Kind of package: 13 inch reel; tape On-state resistance: 25Ω Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2.5A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMP2900UV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Drain current: -680mA Gate charge: 0.7nC Power dissipation: 0.8W Gate-source voltage: ±6V Kind of package: 7 inch reel; tape On-state resistance: 25Ω Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMN4034SSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 5A Pulsed drain current: 24.8A Power dissipation: 2.14W Case: SO8 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: SMD Gate charge: 18nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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DMG3414UQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23 Mounting: SMD Pulsed drain current: 30A Power dissipation: 0.78W Gate charge: 9.6nC Polarisation: unipolar Drain current: 3.2A Kind of channel: enhancement Drain-source voltage: 20V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Case: SOT23 On-state resistance: 37mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMG3414UQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23 Mounting: SMD Pulsed drain current: 30A Power dissipation: 0.78W Gate charge: 9.6nC Polarisation: unipolar Drain current: 3.2A Kind of channel: enhancement Drain-source voltage: 20V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Case: SOT23 On-state resistance: 37mΩ |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DMT8012LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Drain current: 28A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2.7W Gate charge: 34nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| DMT8012LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 7 inch reel; tape Drain current: 30A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Power dissipation: 2.2W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DMT8012LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain current: 7.6A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2.2W Gate charge: 34nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMT8012LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Drain current: 7.2A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2.1W Gate charge: 34nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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DMT8012LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Drain current: 7.8A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Pulsed drain current: 80A Power dissipation: 2W Gate charge: 34nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
 |
BZT52C4V7S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52C4V3S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZT52C4V3LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 4.3V; SMD; X1-DFN1006-2; reel,tape Type of diode: Zener Power dissipation: 0.25W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: X1-DFN1006-2 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
BZT52C4V3T-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: SOD523 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BZT52C4V3TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.3V Mounting: SMD Tolerance: ±7% Case: SOD523 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52C4V7SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZT52C4V7TQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6.5% Case: SOD523 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
ZLDO1117QG12TA | DIODES INCORPORATED |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD Kind of package: reel; tape Case: SOT223 Mounting: SMD Tolerance: ±2% Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 1A Number of channels: 1 Output voltage: 1.2V Voltage drop: 1.3V Input voltage: 2.7...12V Application: automotive industry Manufacturer series: ZLDO1117 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DMTH84M1SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 400A Power dissipation: 2.8W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 63nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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DMP4065S-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 442 шт: термін постачання 14-30 дні (днів) |
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| DMTH10H009LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Pulsed drain current: 360A Power dissipation: 3.1W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 40.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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SMCJ15A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 61.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| DMN62D1LFD-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 0.55nC Drain current: 0.4A Power dissipation: 0.5W On-state resistance: 2Ω Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMN62D1LFDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW; U-DFN1212-3 Type of transistor: N-MOSFET Mounting: SMD Case: U-DFN1212-3 Polarisation: unipolar Gate charge: 0.55nC Drain current: 0.4A Power dissipation: 0.5W On-state resistance: 2Ω Drain-source voltage: 60V Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMN601TKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 343mA; 500mW; SOT523 Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Gate charge: 0.51nC Drain current: 343mA Power dissipation: 0.5W On-state resistance: 2Ω Drain-source voltage: 60V Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMG8601UFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW Polarisation: unipolar Gate charge: 8.8nC On-state resistance: 34mΩ Power dissipation: 920mW Drain current: 5.2A Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Pulsed drain current: 27A Drain-source voltage: 20V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: U-DFN3030-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZT52C36S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 36V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 36V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
на замовлення 5371 шт: термін постачання 14-30 дні (днів) |
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| APX811-29UG-7 |
|
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT143
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Integrated circuit features: manual reset
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1.1...5.5V DC
Case: SOT143
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 30µA
Maximum output current: 20mA
Threshold on-voltage: 2.93V
Kind of package: reel; tape
Number of channels: 1
Delay time: 200ms
Integrated circuit features: manual reset
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BCX6825TA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 50...400
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 50...400
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.64 грн |
| 18+ | 23.48 грн |
| 100+ | 15.43 грн |
| BCX6825QTA |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 50...400
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 2A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1W; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 50...400
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 2A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| AP7115-25SEG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT353; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7115
Input voltage: 2.5...5.5V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Output voltage: 2.5V
Kind of package: reel; tape
Case: SOT353
Number of channels: 1
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT353; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7115
Input voltage: 2.5...5.5V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Output voltage: 2.5V
Kind of package: reel; tape
Case: SOT353
Number of channels: 1
Tolerance: ±2%
на замовлення 298 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.84 грн |
| 17+ | 25.16 грн |
| 21+ | 20.21 грн |
| 100+ | 9.90 грн |
| AP7115-28SEG-7 |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT353; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7115
Input voltage: 2.5...5.5V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Output voltage: 2.8V
Kind of package: reel; tape
Case: SOT353
Number of channels: 1
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT353; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: AP7115
Input voltage: 2.5...5.5V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.3V
Operating temperature: -40...85°C
Output voltage: 2.8V
Kind of package: reel; tape
Case: SOT353
Number of channels: 1
Tolerance: ±2%
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BSS127SSN-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40mA; Idm: 0.16A; 0.61W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40mA
Pulsed drain current: 0.16A
Power dissipation: 0.61W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 190Ω
Mounting: SMD
Gate charge: 1.08nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40mA; Idm: 0.16A; 0.61W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40mA
Pulsed drain current: 0.16A
Power dissipation: 0.61W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 190Ω
Mounting: SMD
Gate charge: 1.08nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 2DA1213Y-13 |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; SOT89
Collector current: 2A
Case: SOT89
Pulsed collector current: 2.5A
Type of transistor: PNP
Mounting: SMD
Power dissipation: 1W
Current gain: 20...240
Collector-emitter voltage: 50V
Quantity in set/package: 2500pcs.
Frequency: 160MHz
Polarisation: bipolar
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; SOT89
Collector current: 2A
Case: SOT89
Pulsed collector current: 2.5A
Type of transistor: PNP
Mounting: SMD
Power dissipation: 1W
Current gain: 20...240
Collector-emitter voltage: 50V
Quantity in set/package: 2500pcs.
Frequency: 160MHz
Polarisation: bipolar
Kind of package: reel; tape
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.74 грн |
| 19+ | 23.06 грн |
| 100+ | 14.26 грн |
| 2DA1201Y-7 |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 800mA; 1.5W; SOT89
Collector current: 0.8A
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Power dissipation: 1.5W
Current gain: 120...240
Collector-emitter voltage: 120V
Quantity in set/package: 1000pcs.
Frequency: 160MHz
Polarisation: bipolar
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 800mA; 1.5W; SOT89
Collector current: 0.8A
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Power dissipation: 1.5W
Current gain: 120...240
Collector-emitter voltage: 120V
Quantity in set/package: 1000pcs.
Frequency: 160MHz
Polarisation: bipolar
Kind of package: reel; tape
на замовлення 772 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.29 грн |
| 39+ | 10.82 грн |
| 50+ | 9.64 грн |
| 100+ | 9.39 грн |
| 2DA1201YQTC |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.8A; 1.5W; SOT89
Collector current: 0.8A
Case: SOT89
Pulsed collector current: 3A
Type of transistor: PNP
Mounting: SMD
Power dissipation: 1.5W
Current gain: 120...240
Collector-emitter voltage: 120V
Quantity in set/package: 4000pcs.
Frequency: 160MHz
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.8A; 1.5W; SOT89
Collector current: 0.8A
Case: SOT89
Pulsed collector current: 3A
Type of transistor: PNP
Mounting: SMD
Power dissipation: 1.5W
Current gain: 120...240
Collector-emitter voltage: 120V
Quantity in set/package: 4000pcs.
Frequency: 160MHz
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DDA124EUQ-13-F |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; automotive industry
Type of transistor: PNP x2
Mounting: SMD
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; automotive industry
Type of transistor: PNP x2
Mounting: SMD
Application: automotive industry
Polarisation: bipolar
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DDA124EH-7 |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 22kΩ
Collector current: 0.1A
Case: SOT563
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.15W
Current gain: 56
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 22kΩ
Collector current: 0.1A
Case: SOT563
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.15W
Current gain: 56
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DDA124EU-7-F |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 22kΩ
Collector current: 0.1A
Case: SOT363
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.2W
Current gain: 56
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 22kΩ
Collector current: 0.1A
Case: SOT363
Type of transistor: PNP x2
Mounting: SMD
Power dissipation: 0.2W
Current gain: 56
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DDZ9687-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 4.3V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 4.3V
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| ADTC143ZUAQ-13 |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 10000pcs.
Power dissipation: 0.33W
Application: automotive industry
Current gain: 80
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 10000pcs.
Power dissipation: 0.33W
Application: automotive industry
Current gain: 80
Frequency: 250MHz
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| ADTC143ZUAQ-7 |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.33W
Application: automotive industry
Current gain: 80
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Power dissipation: 0.33W
Application: automotive industry
Current gain: 80
Frequency: 250MHz
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| ZRC400F01TA |
|
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 4.096V; ±1%; SOT23; reel,tape; 5mA
Type of integrated circuit: voltage reference source
Reference voltage: 4.096V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 5mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 4.096V; ±1%; SOT23; reel,tape; 5mA
Type of integrated circuit: voltage reference source
Reference voltage: 4.096V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 5mA
на замовлення 2885 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 81.28 грн |
| 7+ | 63.40 грн |
| 10+ | 57.36 грн |
| 25+ | 50.40 грн |
| 30+ | 49.23 грн |
| 50+ | 46.38 грн |
| 100+ | 43.36 грн |
| 150+ | 42.10 грн |
| 250+ | 40.67 грн |
| AP3783RCK6TR-G1 |
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOT26
Supply voltage: 25V
Operating temperature: -40...105°C
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC switcher,PWM controller; 80kHz; SOT26; 25V
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOT26
Supply voltage: 25V
Operating temperature: -40...105°C
Kind of integrated circuit: DC/DC switcher; PWM controller
Frequency: 80kHz
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Мінімальне замовлення: 3000 шт
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| SMCJ15CA-13-F |
|
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| BC847BVN-7 |
|
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: complementary pair
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: complementary pair
Quantity in set/package: 3000pcs.
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| BC847BVNQ-7 |
|
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Kind of transistor: complementary pair
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Pulsed collector current: 0.2A
Kind of transistor: complementary pair
Quantity in set/package: 3000pcs.
Application: automotive industry
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| BC847BVCQ-7 |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Application: automotive industry
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| RDBF310-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
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| MMBZ5240BTS-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; SOT363; reel,tape; triple independent
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Semiconductor structure: triple independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; SMD; SOT363; reel,tape; triple independent
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Semiconductor structure: triple independent
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Мінімальне замовлення: 3000 шт
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| DMP26M1UFG-13 |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Pulsed drain current: -110A
Power dissipation: 3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Pulsed drain current: -110A
Power dissipation: 3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| BC53-16PA-7 |
|
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 520mW; U-DFN2020-3; 3000pcs.
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.52W
Case: U-DFN2020-3
Pulsed collector current: 2A
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 520mW; U-DFN2020-3; 3000pcs.
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.52W
Case: U-DFN2020-3
Pulsed collector current: 2A
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
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| AP63200QWU-7 |
|
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| DDTC123YUA-7-F |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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| MURS140-13-F |
|
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 35A
Max. forward voltage: 1.25V
Max. off-state voltage: 0.4kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 10pF
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 35A
Max. forward voltage: 1.25V
Max. off-state voltage: 0.4kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 10pF
Type of diode: rectifying
на замовлення 2654 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.61 грн |
| 22+ | 19.46 грн |
| 25+ | 16.86 грн |
| 100+ | 12.41 грн |
| 500+ | 11.15 грн |
| 1000+ | 10.23 грн |
| DMN2004K-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.45A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1175 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.61 грн |
| 29+ | 14.93 грн |
| 50+ | 11.49 грн |
| 100+ | 10.32 грн |
| 500+ | 8.13 грн |
| 1000+ | 7.30 грн |
| 2N7002VAC-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| 2N7002VC-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 280mA; Idm: 1.5A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP2200UDW-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363
Case: SOT363
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 0.6W
Gate charge: 2.1nC
Polarisation: unipolar
Drain current: -0.7A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 1Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -700mA; 600mW; SOT363
Case: SOT363
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 0.6W
Gate charge: 2.1nC
Polarisation: unipolar
Drain current: -0.7A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 1Ω
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Мінімальне замовлення: 10000 шт
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| DMP2200UDW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 69000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.33 грн |
| DMP2900UV-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Drain current: -680mA
Gate charge: 0.7nC
Power dissipation: 0.8W
Gate-source voltage: ±6V
Kind of package: 13 inch reel; tape
On-state resistance: 25Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.5A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Drain current: -680mA
Gate charge: 0.7nC
Power dissipation: 0.8W
Gate-source voltage: ±6V
Kind of package: 13 inch reel; tape
On-state resistance: 25Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.5A
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Мінімальне замовлення: 10000 шт
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| DMP2900UV-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Drain current: -680mA
Gate charge: 0.7nC
Power dissipation: 0.8W
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
On-state resistance: 25Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.5A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Drain current: -680mA
Gate charge: 0.7nC
Power dissipation: 0.8W
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
On-state resistance: 25Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.5A
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| DMN4034SSD-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 24.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5A; Idm: 24.8A; 2.14W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5A
Pulsed drain current: 24.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 2500 шт
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| DMG3414UQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 0.78W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 37mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 0.78W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 37mΩ
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| DMG3414UQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 0.78W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance: 37mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 780mW; SOT23
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 0.78W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance: 37mΩ
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Мінімальне замовлення: 10000 шт
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| DMT8012LK3-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.7W
Gate charge: 34nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 80A; 2.7W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.7W
Gate charge: 34nC
Polarisation: unipolar
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Мінімальне замовлення: 2500 шт
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| DMT8012LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Power dissipation: 2.2W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Power dissipation: 2.2W
Polarisation: unipolar
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| DMT8012LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.2W
Gate charge: 34nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.2W
Gate charge: 34nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DMT8012LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain current: 7.2A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 34nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.2A; Idm: 80A; 2.1W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Drain current: 7.2A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2.1W
Gate charge: 34nC
Polarisation: unipolar
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Мінімальне замовлення: 2500 шт
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| DMT8012LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain current: 7.8A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2W
Gate charge: 34nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Drain current: 7.8A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Pulsed drain current: 80A
Power dissipation: 2W
Gate charge: 34nC
Polarisation: unipolar
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Мінімальне замовлення: 2500 шт
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| BZT52C4V7S-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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| BZT52C4V3S-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.3V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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| BZT52C4V3LP-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 4.3V; SMD; X1-DFN1006-2; reel,tape
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: X1-DFN1006-2
Kind of package: reel; tape
Semiconductor structure: single diode
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| BZT52C4V3T-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
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Мінімальне замовлення: 6000 шт
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| BZT52C4V3TQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±7%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| BZT52C4V7SQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| BZT52C4V7TQ-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOD523; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD523
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| ZLDO1117QG12TA |
|
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Tolerance: ±2%
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 1A
Number of channels: 1
Output voltage: 1.2V
Voltage drop: 1.3V
Input voltage: 2.7...12V
Application: automotive industry
Manufacturer series: ZLDO1117
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT223; SMD
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Tolerance: ±2%
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 1A
Number of channels: 1
Output voltage: 1.2V
Voltage drop: 1.3V
Input voltage: 2.7...12V
Application: automotive industry
Manufacturer series: ZLDO1117
Kind of voltage regulator: fixed; LDO; linear
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| DMTH84M1SPSQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 2.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 2.8W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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Мінімальне замовлення: 2500 шт
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од. на суму грн.
| DMP4065S-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 442 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.51 грн |
| 20+ | 21.64 грн |
| 50+ | 14.42 грн |
| 100+ | 11.99 грн |
| DMTH10H009LPSQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Pulsed drain current: 360A
Power dissipation: 3.1W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 40.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 360A; 3.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Pulsed drain current: 360A
Power dissipation: 3.1W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 40.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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Мінімальне замовлення: 2500 шт
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| SMCJ15A-13-F |
|
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| DMN62D1LFD-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 0.55nC
Drain current: 0.4A
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 0.55nC
Drain current: 0.4A
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| DMN62D1LFDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW; U-DFN1212-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN1212-3
Polarisation: unipolar
Gate charge: 0.55nC
Drain current: 0.4A
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; 500mW; U-DFN1212-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN1212-3
Polarisation: unipolar
Gate charge: 0.55nC
Drain current: 0.4A
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN601TKQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 343mA; 500mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Gate charge: 0.51nC
Drain current: 343mA
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 343mA; 500mW; SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Gate charge: 0.51nC
Drain current: 343mA
Power dissipation: 0.5W
On-state resistance: 2Ω
Drain-source voltage: 60V
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMG8601UFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW
Polarisation: unipolar
Gate charge: 8.8nC
On-state resistance: 34mΩ
Power dissipation: 920mW
Drain current: 5.2A
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Pulsed drain current: 27A
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN3030-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; Idm: 27A; 920mW
Polarisation: unipolar
Gate charge: 8.8nC
On-state resistance: 34mΩ
Power dissipation: 920mW
Drain current: 5.2A
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Pulsed drain current: 27A
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN3030-8
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C36S-7-F |
|
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 36V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 36V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
на замовлення 5371 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 82+ | 5.12 грн |
| 96+ | 4.40 грн |
| 157+ | 2.68 грн |
| 500+ | 1.91 грн |
| 3000+ | 1.74 грн |