Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78507) > Сторінка 1208 з 1309
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT12H090LFDF4-7 | DIODES INCORPORATED |
 DMT12H090LFDF4-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT15H017LPS-13 | DIODES INCORPORATED |
DMT15H017LPS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT15H017LPSW-13 | DIODES INCORPORATED |
DMT15H017LPSW-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT15H017SK3-13 | DIODES INCORPORATED |
DMT15H017SK3-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT2004UFDF-7 | DIODES INCORPORATED |
DMT2004UFDF-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT2004UFG-7 | DIODES INCORPORATED |
DMT2004UFG-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT2004UFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 53.7nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 24V Drain current: 55A On-state resistance: 10mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT2004UFV-7 | DIODES INCORPORATED |
DMT2004UFV-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT2005UDV-13 | DIODES INCORPORATED |
DMT2005UDV-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3003LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 44nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3003LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 44nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 2000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3003LFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 44nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 2000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3004LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W Drain-source voltage: 30V Drain current: 17A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 2.7W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 43.7nC Kind of channel: enhancement Gate-source voltage: -16...20V Pulsed drain current: 180A Mounting: SMD Case: PowerDI5060-8 кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3006LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 10000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3006LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3006LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3006LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Drain-source voltage: 30V Drain current: 12.8A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 27.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3006LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Drain-source voltage: 30V Drain current: 12.8A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 27.8W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 2000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3006LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3006LFVQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3006LPB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W Drain-source voltage: 30V Drain current: 9/11A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 12.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80...100A Mounting: SMD Case: PowerDI5060-8 кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3009LDT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Drain-source voltage: 30V Drain current: 11A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 20nC Kind of channel: enhancement Gate-source voltage: -16...20V Pulsed drain current: 80A Mounting: SMD Case: V-DFN3030-8 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3009LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3009LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3009LFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI®3333-8 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3009UFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W Drain-source voltage: 30V Drain current: 8.5A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 14.6nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 80A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LDV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W Drain-source voltage: 30V Drain current: 25A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 10000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LFDBQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 10000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LFDBQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 32mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.8W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 10000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LFDFQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Drain-source voltage: 30V Drain current: 6.7A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT3020LFDFQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W Drain-source voltage: 30V Drain current: 5.4A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
DMT3020LSDQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8 Drain-source voltage: 30V Drain current: 13A On-state resistance: 32mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.5W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: SO8 кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. |
| DMT3020UFDB-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 8.8nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 35A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 10000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT30M9LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Drain-source voltage: 30V Drain current: 100A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 160.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Case: PowerDI5060-8 кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT31M6LPS-13 | DIODES INCORPORATED |
DMT31M6LPS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT32M5LFG-13 | DIODES INCORPORATED |
DMT32M5LFG-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT32M5LFG-7 | DIODES INCORPORATED |
DMT32M5LFG-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT32M5LPS-13 | DIODES INCORPORATED |
DMT32M5LPS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT34M1LPS-13 | DIODES INCORPORATED |
DMT34M1LPS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT35M4LFDF-7 | DIODES INCORPORATED |
DMT35M4LFDF-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT35M4LFVW-7 | DIODES INCORPORATED |
DMT35M4LFVW-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT35M7LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W Power dissipation: 1.98W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 36nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 61A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT36M1LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2.6W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Case: PowerDI5060-8 Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 12A On-state resistance: 9.8mΩ кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT4002LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W Case: PowerDI5060-8 Drain-source voltage: 40V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 116.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Mounting: SMD кількість в упаковці: 2500 шт |
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В кошику од. на суму грн. | |
| DMT4003SCT | DIODES INCORPORATED |
DMT4003SCT THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT4004LPS-13 | DIODES INCORPORATED |
DMT4004LPS-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT4005SCT | DIODES INCORPORATED |
DMT4005SCT THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT4008LFV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Power dissipation: 1.9W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 40V Drain current: 9.7A On-state resistance: 12mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT4011LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: 40V Drain current: 8.6A On-state resistance: 17.8mΩ Type of transistor: N-MOSFET Power dissipation: 2W Kind of package: 13 inch reel; tape Gate charge: 15.1nC Kind of channel: enhancement Gate-source voltage: -16...20V Pulsed drain current: 65A Case: PowerDI3333-8 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT4011LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Polarisation: unipolar Mounting: SMD Drain-source voltage: 40V Drain current: 8.6A On-state resistance: 17.8mΩ Type of transistor: N-MOSFET Power dissipation: 2W Kind of package: 7 inch reel; tape Gate charge: 15.1nC Kind of channel: enhancement Gate-source voltage: -16...20V Pulsed drain current: 65A Case: PowerDI3333-8 кількість в упаковці: 1 шт |
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В кошику од. на суму грн. | |
| DMT47M2LDV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 9.5A Pulsed drain current: 120A Power dissipation: 14.8W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 14nC Kind of package: 7 inch reel; tape Kind of channel: enhancement кількість в упаковці: 2000 шт |
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В кошику од. на суму грн. | |
| DMT47M2LDVQ-7 | DIODES INCORPORATED |
DMT47M2LDVQ-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT47M2SFVW-7 | DIODES INCORPORATED |
DMT47M2SFVW-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT47M2SFVWQ-13 | DIODES INCORPORATED |
DMT47M2SFVWQ-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT47M2SFVWQ-7 | DIODES INCORPORATED |
DMT47M2SFVWQ-7 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT5015LFDF-13 | DIODES INCORPORATED | DMT5015LFDF-13 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. |
| DMT12H090LFDF4-7 |
|
Виробник: DIODES INCORPORATED
DMT12H090LFDF4-7 SMD N channel transistors
DMT12H090LFDF4-7 SMD N channel transistors
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В кошику
од. на суму грн.
| DMT15H017LPS-13 |
|
Виробник: DIODES INCORPORATED
DMT15H017LPS-13 SMD N channel transistors
DMT15H017LPS-13 SMD N channel transistors
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В кошику
од. на суму грн.
| DMT15H017LPSW-13 |
|
Виробник: DIODES INCORPORATED
DMT15H017LPSW-13 SMD N channel transistors
DMT15H017LPSW-13 SMD N channel transistors
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од. на суму грн.
| DMT15H017SK3-13 |
|
Виробник: DIODES INCORPORATED
DMT15H017SK3-13 SMD N channel transistors
DMT15H017SK3-13 SMD N channel transistors
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В кошику
од. на суму грн.
| DMT2004UFDF-7 |
|
Виробник: DIODES INCORPORATED
DMT2004UFDF-7 SMD N channel transistors
DMT2004UFDF-7 SMD N channel transistors
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В кошику
од. на суму грн.
| DMT2004UFG-7 |
|
Виробник: DIODES INCORPORATED
DMT2004UFG-7 SMD N channel transistors
DMT2004UFG-7 SMD N channel transistors
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В кошику
од. на суму грн.
| DMT2004UFV-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
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В кошику
од. на суму грн.
| DMT2004UFV-7 |
|
Виробник: DIODES INCORPORATED
DMT2004UFV-7 SMD N channel transistors
DMT2004UFV-7 SMD N channel transistors
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В кошику
од. на суму грн.
| DMT2005UDV-13 |
|
Виробник: DIODES INCORPORATED
DMT2005UDV-13 SMD N channel transistors
DMT2005UDV-13 SMD N channel transistors
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В кошику
од. на суму грн.
| DMT3003LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT3003LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 2000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT3003LFGQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Drain-source voltage: 30V
Drain current: 18A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 44nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 2000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT3004LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Drain-source voltage: 30V
Drain current: 17A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 43.7nC
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 180A
Mounting: SMD
Case: PowerDI5060-8
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Drain-source voltage: 30V
Drain current: 17A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 43.7nC
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 180A
Mounting: SMD
Case: PowerDI5060-8
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| DMT3006LFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
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В кошику
од. на суму грн.
| DMT3006LFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
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В кошику
од. на суму грн.
| DMT3006LFDFQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| DMT3006LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Drain-source voltage: 30V
Drain current: 12.8A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 27.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Drain-source voltage: 30V
Drain current: 12.8A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 27.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
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В кошику
од. на суму грн.
| DMT3006LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Drain-source voltage: 30V
Drain current: 12.8A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 27.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Drain-source voltage: 30V
Drain current: 12.8A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 27.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 2000 шт
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В кошику
од. на суму грн.
| DMT3006LFV-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Drain-source voltage: 30V
Drain current: 45A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Drain-source voltage: 30V
Drain current: 45A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT3006LFVQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Drain-source voltage: 30V
Drain current: 45A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W
Drain-source voltage: 30V
Drain current: 45A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT3006LPB-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Drain-source voltage: 30V
Drain current: 9/11A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 12.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80...100A
Mounting: SMD
Case: PowerDI5060-8
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9/11A; Idm: 80÷100A; 1.7W
Drain-source voltage: 30V
Drain current: 9/11A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 12.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80...100A
Mounting: SMD
Case: PowerDI5060-8
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| DMT3009LDT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 80A
Mounting: SMD
Case: V-DFN3030-8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W
Drain-source voltage: 30V
Drain current: 11A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 80A
Mounting: SMD
Case: V-DFN3030-8
кількість в упаковці: 3000 шт
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од. на суму грн.
| DMT3009LFVW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 1 шт
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В кошику
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| DMT3009LFVWQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
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В кошику
од. на суму грн.
| DMT3009LFVWQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI®3333-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI®3333-8
кількість в упаковці: 1 шт
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од. на суму грн.
| DMT3009UFVW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W
Drain-source voltage: 30V
Drain current: 8.5A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 14.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; Idm: 80A; 2.6W
Drain-source voltage: 30V
Drain current: 8.5A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 14.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 80A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| DMT3020LDV-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Drain-source voltage: 30V
Drain current: 25A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 50A; 1.9W
Drain-source voltage: 30V
Drain current: 25A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| DMT3020LFDB-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
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В кошику
од. на суму грн.
| DMT3020LFDB-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020LFDBQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020LFDBQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.8W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
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В кошику
од. на суму грн.
| DMT3020LFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
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В кошику
од. на суму грн.
| DMT3020LFDF-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT3020LFDFQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 1 шт
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од. на суму грн.
| DMT3020LFDFQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.4A; Idm: 40A; 1.1W
Drain-source voltage: 30V
Drain current: 5.4A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 3000 шт
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од. на суму грн.
| DMT3020LSDQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 50A; 1.5W; SO8
Drain-source voltage: 30V
Drain current: 13A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
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од. на суму грн.
| DMT3020UFDB-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W
Drain-source voltage: 30V
Drain current: 5.2A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 8.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Mounting: SMD
Case: U-DFN2020-6
кількість в упаковці: 10000 шт
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В кошику
од. на суму грн.
| DMT30M9LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 160.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 160.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
кількість в упаковці: 2500 шт
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од. на суму грн.
| DMT31M6LPS-13 |
|
Виробник: DIODES INCORPORATED
DMT31M6LPS-13 SMD N channel transistors
DMT31M6LPS-13 SMD N channel transistors
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| DMT32M5LFG-13 |
|
Виробник: DIODES INCORPORATED
DMT32M5LFG-13 SMD N channel transistors
DMT32M5LFG-13 SMD N channel transistors
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| DMT32M5LFG-7 |
|
Виробник: DIODES INCORPORATED
DMT32M5LFG-7 SMD N channel transistors
DMT32M5LFG-7 SMD N channel transistors
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| DMT32M5LPS-13 |
|
Виробник: DIODES INCORPORATED
DMT32M5LPS-13 SMD N channel transistors
DMT32M5LPS-13 SMD N channel transistors
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од. на суму грн.
| DMT34M1LPS-13 |
|
Виробник: DIODES INCORPORATED
DMT34M1LPS-13 SMD N channel transistors
DMT34M1LPS-13 SMD N channel transistors
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од. на суму грн.
| DMT35M4LFDF-7 |
|
Виробник: DIODES INCORPORATED
DMT35M4LFDF-7 SMD N channel transistors
DMT35M4LFDF-7 SMD N channel transistors
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| DMT35M4LFVW-7 |
|
Виробник: DIODES INCORPORATED
DMT35M4LFVW-7 SMD N channel transistors
DMT35M4LFVW-7 SMD N channel transistors
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од. на суму грн.
| DMT35M7LFV-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W
Power dissipation: 1.98W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 61A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W
Power dissipation: 1.98W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 36nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 30V
Drain current: 61A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
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В кошику
од. на суму грн.
| DMT36M1LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 9.8mΩ
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 16.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PowerDI5060-8
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 9.8mΩ
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT4002LPS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 116.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 116.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT4003SCT |
|
Виробник: DIODES INCORPORATED
DMT4003SCT THT N channel transistors
DMT4003SCT THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT4004LPS-13 |
|
Виробник: DIODES INCORPORATED
DMT4004LPS-13 SMD N channel transistors
DMT4004LPS-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT4005SCT |
|
Виробник: DIODES INCORPORATED
DMT4005SCT THT N channel transistors
DMT4005SCT THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT4008LFV-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 40V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Power dissipation: 1.9W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 40V
Drain current: 9.7A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT4011LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 40V
Drain current: 8.6A
On-state resistance: 17.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Kind of package: 13 inch reel; tape
Gate charge: 15.1nC
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 40V
Drain current: 8.6A
On-state resistance: 17.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Kind of package: 13 inch reel; tape
Gate charge: 15.1nC
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Case: PowerDI3333-8
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT4011LFG-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 40V
Drain current: 8.6A
On-state resistance: 17.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Kind of package: 7 inch reel; tape
Gate charge: 15.1nC
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Case: PowerDI3333-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 40V
Drain current: 8.6A
On-state resistance: 17.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Kind of package: 7 inch reel; tape
Gate charge: 15.1nC
Kind of channel: enhancement
Gate-source voltage: -16...20V
Pulsed drain current: 65A
Case: PowerDI3333-8
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT47M2LDV-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.5A
Pulsed drain current: 120A
Power dissipation: 14.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
кількість в упаковці: 2000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.5A
Pulsed drain current: 120A
Power dissipation: 14.8W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
кількість в упаковці: 2000 шт
товару немає в наявності
В кошику
од. на суму грн.
| DMT47M2LDVQ-7 |
|
Виробник: DIODES INCORPORATED
DMT47M2LDVQ-7 SMD N channel transistors
DMT47M2LDVQ-7 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT47M2SFVW-7 |
|
Виробник: DIODES INCORPORATED
DMT47M2SFVW-7 SMD N channel transistors
DMT47M2SFVW-7 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT47M2SFVWQ-13 |
|
Виробник: DIODES INCORPORATED
DMT47M2SFVWQ-13 SMD N channel transistors
DMT47M2SFVWQ-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT47M2SFVWQ-7 |
|
Виробник: DIODES INCORPORATED
DMT47M2SFVWQ-7 SMD N channel transistors
DMT47M2SFVWQ-7 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| DMT5015LFDF-13 |
Виробник: DIODES INCORPORATED
DMT5015LFDF-13 SMD N channel transistors
DMT5015LFDF-13 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.