Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74696) > Сторінка 1208 з 1245
| Фото | Назва | Виробник | Інформація |
Доступність |
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SMBJ16CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...20.5V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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| SMBJ160A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 178÷205V; 2.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 160V Breakdown voltage: 178...205V Max. forward impulse current: 2.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||||||
| SMBJ160CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 178÷205V; 2.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 160V Breakdown voltage: 178...205V Max. forward impulse current: 2.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP2120N-2.5TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD Operating temperature: -40...85°C Manufacturer series: AP2120 Type of integrated circuit: voltage regulator Case: SOT23 Mounting: SMD Output current: 0.15A Voltage drop: 0.5V Output voltage: 2.5V Number of channels: 1 Tolerance: ±2% Input voltage: 2...6V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear |
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В кошику од. на суму грн. | ||||||||||||||||
| AL5822W6-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC Case: SOT26 Type of integrated circuit: driver Kind of integrated circuit: LED driver Mounting: SMD Operating temperature: -40...105°C Output current: 220µA Number of channels: 1 Operating voltage: 11...30V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMC4050SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 45/45mΩ Power dissipation: 1.8W Drain current: 5.8/-5.5A Gate-source voltage: ±20V Drain-source voltage: 40/-40V Kind of package: 13 inch reel; tape Case: SO8 |
на замовлення 1235 шт: термін постачання 21-30 дні (днів) |
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| B560CQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; 16ns; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Capacitance: 300pF Max. forward voltage: 0.7V Leakage current: 20mA Max. forward impulse current: 100A Reverse recovery time: 16ns Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMN3009SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 100A Power dissipation: 3.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 1830 шт: термін постачання 21-30 дні (днів) |
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ZTX651 | DIODES INCORPORATED |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 1.5W Case: TO92 Mounting: THT Quantity in set/package: 4000pcs. Kind of package: bulk Frequency: 175MHz Current gain: 40...300 |
на замовлення 1722 шт: термін постачання 21-30 дні (днів) |
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| AZ1084CD-5.0TRG1 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 5A; DPAK; SMD; 0÷125°C Case: DPAK Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Number of channels: 1 Tolerance: ±1% Output voltage: 5V Voltage drop: 1.5V Input voltage: 6.5...10V Output current: 5A Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT3906Q-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ADTC114EUAQ-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 30 Quantity in set/package: 10000pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMSZ5248BS-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 3904 шт: термін постачання 21-30 дні (днів) |
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MMSZ5248B-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 675 шт: термін постачання 21-30 дні (днів) |
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MMSZ5248BQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37/0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV70DW-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.3A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double x2 Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 2998 шт: термін постачання 21-30 дні (днів) |
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BCX51TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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BCX5116TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 100...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
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DF005S-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74LVC1G14QW5-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT25 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC Number of inputs: 1 Kind of integrated circuit: inverter Kind of output: push-pull |
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| 74LVC1G14QSE-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOT353 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC Number of inputs: 1 Kind of output: push-pull |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAJ45CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated |
на замовлення 7335 шт: термін постачання 21-30 дні (днів) |
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| 1N5406G-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; reel,tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Capacitance: 40pF Reverse recovery time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AP64102QSP-13 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 1A; SO8-EP Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Mounting: SMD Case: SO8-EP Kind of package: reel; tape Operating temperature: -40...125°C Output current: 1A Output voltage: 0.8...40V DC Input voltage: 3.8...40V DC Efficiency: 88% Frequency: 100kHz...2.2MHz Application: automotive industry Topology: buck |
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В кошику од. на суму грн. | |||||||||||||||||
| ADA114EUQ-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ Application: automotive industry Case: SOT363 Polarisation: bipolar Kind of transistor: BRT Kind of package: reel; tape Type of transistor: PNP x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.27W Current gain: 30 Collector-emitter voltage: 50V Base resistor: 10kΩ Quantity in set/package: 10000pcs. Base-emitter resistor: 10kΩ Frequency: 250MHz |
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В кошику од. на суму грн. | |||||||||||||||||
| ADA114YUQ-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ Application: automotive industry Case: SOT363 Polarisation: bipolar Kind of transistor: BRT Kind of package: reel; tape Type of transistor: PNP x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.27W Collector-emitter voltage: 50V Base resistor: 10kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 47kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCR421UW6Q-7 | DIODES INCORPORATED |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SOT26 Output current: 10...350mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...150°C Application: automotive industry Operating voltage: 1.4...40V DC Kind of package: reel; tape |
на замовлення 3079 шт: термін постачання 21-30 дні (днів) |
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DMN3033LDM-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Power dissipation: 2W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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ZXMP10A17E6TA | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -1.3A; 1.1W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -1.3A Power dissipation: 1.1W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2985 шт: термін постачання 21-30 дні (днів) |
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APX825A-46W6G-7 | DIODES INCORPORATED |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); SOT26 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD Case: SOT26 Integrated circuit features: manual reset; watchdog DC supply current: 30µA Maximum output current: 20mA Delay time: 200ms Number of channels: 1 Supply voltage: 1.1...5.5V DC Threshold on-voltage: 4.63V Active logical level: high; low Kind of package: reel; tape Operating temperature: -40...85°C |
на замовлення 370 шт: термін постачання 21-30 дні (днів) |
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ZXM62P03E6TA | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.625W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.625W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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| AP22817BKBWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25 Operating temperature: -40...85°C Kind of package: reel; tape Mounting: SMD On-state resistance: 95mΩ Number of channels: 1 Output current: 1.5A Supply voltage: 2.7...5.5V DC Case: TSOT25 Kind of integrated circuit: high-side; USB switch Active logical level: low Type of integrated circuit: power switch |
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В кошику од. на суму грн. | |||||||||||||||||
| AP22817BKEWT-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25 Operating temperature: -40...85°C Kind of package: reel; tape Mounting: SMD On-state resistance: 95mΩ Number of channels: 1 Output current: 1.5A Supply voltage: 2.7...5.5V DC Case: TSOT25 Kind of integrated circuit: high-side; USB switch Active logical level: low Type of integrated circuit: power switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N4448HWSQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 3.5pF Case: SOD323 Max. forward voltage: 0.72V Max. load current: 0.5A Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N4448WSFQ-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323F; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 4pF Case: SOD323F Max. forward voltage: 0.62V Max. load current: 0.5A Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N4448WSQ-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 4pF Case: SOD323 Max. forward voltage: 0.62V Max. load current: 0.5A Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ADTC144EUAQ-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry Quantity in set/package: 10000pcs. |
на замовлення 7140 шт: термін постачання 21-30 дні (днів) |
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DMN10H220L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.22Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 2412 шт: термін постачання 21-30 дні (днів) |
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DMN10H220LQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 758 шт: термін постачання 21-30 дні (днів) |
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| 1N4933-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns Case: DO41 Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Capacitance: 15pF Reverse recovery time: 200ns Load current: 1A Max. forward voltage: 1.2V Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ADTA144ECAQ-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 Application: automotive industry Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ADTA144EUAQ-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.33W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 Application: automotive industry Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ABS10B-13 | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A Max. off-state voltage: 1kV Case: SOPA4 Features of semiconductor devices: glass passivated Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1.5A Max. forward voltage: 1.1V Max. forward impulse current: 50A |
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| ABS10M-13 | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4 Max. off-state voltage: 1kV Case: SOPA4 Features of semiconductor devices: glass passivated Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 0.95V Max. forward impulse current: 24A |
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KBJ406G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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GBJ2506-F | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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KBJ408G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 120A Version: flat Case: KBJ Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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| 1N4148WS-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A |
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| 1N4148WSQ-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry |
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|
SMCJ12A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
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DDZ5V6B-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±2.5% Semiconductor structure: single diode Leakage current: 50nA |
на замовлення 3562 шт: термін постачання 21-30 дні (днів) |
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UDZ5V6B-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD323 Mounting: SMD Semiconductor structure: single diode |
на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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AZ23C5V6-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
на замовлення 1127 шт: термін постачання 21-30 дні (днів) |
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AP2171DWG-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD Active logical level: high Mounting: SMD Kind of package: reel; tape Case: SOT25 On-state resistance: 95mΩ Output current: 1A Number of channels: 1 Supply voltage: 2.7...5.5V DC Kind of integrated circuit: high-side; USB switch Kind of output: P-Channel Type of integrated circuit: power switch |
на замовлення 2969 шт: термін постачання 21-30 дні (днів) |
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| ZVN4525GTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.31A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±40V On-state resistance: 8.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.44A |
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DMP1045U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD Version: ESD Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: -12V Drain current: -3.1A On-state resistance: 75mΩ Power dissipation: 0.8W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
на замовлення 2750 шт: термін постачання 21-30 дні (днів) |
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| 1N5407G-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD Case: DO201AD Mounting: THT Features of semiconductor devices: glass passivated Type of diode: rectifying Semiconductor structure: single diode Capacitance: 40pF Reverse recovery time: 2µs Max. forward voltage: 1.1V Load current: 3A Max. forward impulse current: 125A Max. off-state voltage: 0.8kV Kind of package: reel; tape |
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SMBJ100A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 100V Breakdown voltage: 111...128V Max. forward impulse current: 3.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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| AP61302QZ6-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Frequency: 2.2MHz Mounting: SMD Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Kind of package: reel; tape Operating temperature: -40...85°C Output current: 3A Output voltage: 0.6...5.5V DC Input voltage: 2.4...5.5V DC Case: SOT563 Efficiency: 84% Application: automotive industry Topology: buck |
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| 1N5401G-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 125A Case: DO201AD Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Capacitance: 40pF Reverse recovery time: 2µs |
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В кошику од. на суму грн. |
| SMBJ16CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷20.5V; 23.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...20.5V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMBJ160A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷205V; 2.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...205V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷205V; 2.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...205V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| SMBJ160CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷205V; 2.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...205V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷205V; 2.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...205V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| AP2120N-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Type of integrated circuit: voltage regulator
Case: SOT23
Mounting: SMD
Output current: 0.15A
Voltage drop: 0.5V
Output voltage: 2.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Type of integrated circuit: voltage regulator
Case: SOT23
Mounting: SMD
Output current: 0.15A
Voltage drop: 0.5V
Output voltage: 2.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
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| AL5822W6-7 |
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC
Case: SOT26
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Mounting: SMD
Operating temperature: -40...105°C
Output current: 220µA
Number of channels: 1
Operating voltage: 11...30V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; SOT26; 220uA; Ch: 1; 11÷30VDC
Case: SOT26
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Mounting: SMD
Operating temperature: -40...105°C
Output current: 220µA
Number of channels: 1
Operating voltage: 11...30V DC
Kind of package: reel; tape
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| DMC4050SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 45/45mΩ
Power dissipation: 1.8W
Drain current: 5.8/-5.5A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of package: 13 inch reel; tape
Case: SO8
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 45/45mΩ
Power dissipation: 1.8W
Drain current: 5.8/-5.5A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of package: 13 inch reel; tape
Case: SO8
на замовлення 1235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.56 грн |
| 11+ | 37.33 грн |
| 100+ | 21.18 грн |
| 250+ | 19.98 грн |
| B560CQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 100A
Reverse recovery time: 16ns
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; 16ns; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 300pF
Max. forward voltage: 0.7V
Leakage current: 20mA
Max. forward impulse current: 100A
Reverse recovery time: 16ns
Kind of package: reel; tape
Application: automotive industry
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| DMN3009SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 3.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 100A; 3.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 3.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.51 грн |
| 14+ | 30.61 грн |
| 100+ | 20.94 грн |
| 500+ | 16.39 грн |
| 1000+ | 16.23 грн |
| ZTX651 |
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Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 175MHz
Current gain: 40...300
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 1.5W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 175MHz
Current gain: 40...300
на замовлення 1722 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.61 грн |
| 10+ | 44.60 грн |
| 100+ | 30.21 грн |
| 200+ | 27.18 грн |
| 250+ | 26.22 грн |
| 500+ | 24.70 грн |
| AZ1084CD-5.0TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 5A; DPAK; SMD; 0÷125°C
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Number of channels: 1
Tolerance: ±1%
Output voltage: 5V
Voltage drop: 1.5V
Input voltage: 6.5...10V
Output current: 5A
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 5A; DPAK; SMD; 0÷125°C
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Number of channels: 1
Tolerance: ±1%
Output voltage: 5V
Voltage drop: 1.5V
Input voltage: 6.5...10V
Output current: 5A
Kind of voltage regulator: fixed; LDO; linear
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| MMBT3906Q-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
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| ADTC114EUAQ-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Quantity in set/package: 10000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 330mW; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Quantity in set/package: 10000pcs.
Application: automotive industry
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| MMSZ5248BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 3904 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.33 грн |
| 50+ | 8.15 грн |
| 57+ | 7.03 грн |
| 111+ | 3.62 грн |
| 500+ | 2.48 грн |
| 1000+ | 2.20 грн |
| 3000+ | 1.92 грн |
| MMSZ5248B-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 675 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.75 грн |
| 70+ | 5.75 грн |
| 106+ | 3.80 грн |
| 126+ | 3.18 грн |
| 500+ | 2.23 грн |
| MMSZ5248BQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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| BAV70DW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.19 грн |
| 48+ | 8.47 грн |
| 53+ | 7.67 грн |
| 100+ | 5.42 грн |
| 500+ | 4.24 грн |
| 1000+ | 3.83 грн |
| BCX51TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.54 грн |
| 22+ | 18.22 грн |
| BCX5116TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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| DF005S-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| 74LVC1G14QW5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of integrated circuit: inverter
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of integrated circuit: inverter
Kind of output: push-pull
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| 74LVC1G14QSE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; Ch: 1; IN: 1; CMOS; SMD; SOT353; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of inputs: 1
Kind of output: push-pull
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| SMAJ45CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
на замовлення 7335 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.33 грн |
| 53+ | 7.67 грн |
| 62+ | 6.47 грн |
| 100+ | 4.32 грн |
| 1N5406G-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
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| AP64102QSP-13 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 1A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 1A
Output voltage: 0.8...40V DC
Input voltage: 3.8...40V DC
Efficiency: 88%
Frequency: 100kHz...2.2MHz
Application: automotive industry
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷40VDC; Uout: 0.8÷40VDC; 1A; SO8-EP
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Case: SO8-EP
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 1A
Output voltage: 0.8...40V DC
Input voltage: 3.8...40V DC
Efficiency: 88%
Frequency: 100kHz...2.2MHz
Application: automotive industry
Topology: buck
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| ADA114EUQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 10000pcs.
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 10000pcs.
Base-emitter resistor: 10kΩ
Frequency: 250MHz
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| ADA114YUQ-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 270mW; SOT363; R1: 10kΩ
Application: automotive industry
Case: SOT363
Polarisation: bipolar
Kind of transistor: BRT
Kind of package: reel; tape
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.27W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
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| BCR421UW6Q-7 |
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Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Application: automotive industry
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Output current: 10...350mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...150°C
Application: automotive industry
Operating voltage: 1.4...40V DC
Kind of package: reel; tape
на замовлення 3079 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 21+ | 19.34 грн |
| 24+ | 17.02 грн |
| 28+ | 14.63 грн |
| 50+ | 13.19 грн |
| 100+ | 11.99 грн |
| 250+ | 11.91 грн |
| DMN3033LDM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 2W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Power dissipation: 2W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 49 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.87 грн |
| 15+ | 27.81 грн |
| ZXMP10A17E6TA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.3A; 1.1W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1.3A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.3A; 1.1W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1.3A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2985 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.25 грн |
| 10+ | 44.68 грн |
| 50+ | 33.09 грн |
| 100+ | 28.93 грн |
| 250+ | 24.38 грн |
| 500+ | 23.18 грн |
| APX825A-46W6G-7 |
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT26
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Case: SOT26
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
Active logical level: high; low
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT26
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Case: SOT26
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Number of channels: 1
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 4.63V
Active logical level: high; low
Kind of package: reel; tape
Operating temperature: -40...85°C
на замовлення 370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.82 грн |
| 21+ | 19.82 грн |
| 23+ | 17.50 грн |
| 27+ | 15.03 грн |
| 100+ | 12.39 грн |
| 250+ | 11.35 грн |
| ZXM62P03E6TA |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.625W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.625W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.625W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.625W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.37 грн |
| 10+ | 42.76 грн |
| 100+ | 31.01 грн |
| 500+ | 24.46 грн |
| AP22817BKBWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Supply voltage: 2.7...5.5V DC
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Supply voltage: 2.7...5.5V DC
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Type of integrated circuit: power switch
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| AP22817BKEWT-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Supply voltage: 2.7...5.5V DC
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.5A; Ch: 1; SMD; TSOT25
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 95mΩ
Number of channels: 1
Output current: 1.5A
Supply voltage: 2.7...5.5V DC
Case: TSOT25
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Type of integrated circuit: power switch
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| 1N4448HWSQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.72V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| 1N4448WSFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323F; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD323F
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323F; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD323F
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| 1N4448WSQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD323; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| ADTC144EUAQ-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Quantity in set/package: 10000pcs.
на замовлення 7140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 155+ | 2.84 грн |
| 210+ | 1.93 грн |
| 500+ | 1.71 грн |
| 560+ | 1.69 грн |
| 1540+ | 1.60 грн |
| 2500+ | 1.53 грн |
| DMN10H220L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2412 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.52 грн |
| 25+ | 16.54 грн |
| 50+ | 14.23 грн |
| 100+ | 13.19 грн |
| 500+ | 10.87 грн |
| 1000+ | 9.91 грн |
| 1500+ | 9.27 грн |
| DMN10H220LQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 758 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.10 грн |
| 22+ | 18.22 грн |
| 26+ | 15.67 грн |
| 100+ | 8.39 грн |
| 500+ | 5.75 грн |
| 1N4933-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Case: DO41
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 15pF
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 200ns
Case: DO41
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 15pF
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
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| ADTA144ECAQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 310mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
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| ADTA144EUAQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 330mW; SOT323; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Application: automotive industry
Quantity in set/package: 10000pcs.
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| ABS10B-13 |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Max. off-state voltage: 1kV
Case: SOPA4
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Max. off-state voltage: 1kV
Case: SOPA4
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
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| ABS10M-13 |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4
Max. off-state voltage: 1kV
Case: SOPA4
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 24A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 24A; SOPA4
Max. off-state voltage: 1kV
Case: SOPA4
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 24A
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| KBJ406G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.35 грн |
| 10+ | 53.07 грн |
| 20+ | 46.84 грн |
| GBJ2506-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 105.01 грн |
| 10+ | 63.14 грн |
| 15+ | 59.95 грн |
| 30+ | 54.35 грн |
| KBJ408G |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: KBJ
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
на замовлення 113 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.91 грн |
| 10+ | 52.03 грн |
| 20+ | 47.08 грн |
| 100+ | 37.49 грн |
| 1N4148WS-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
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| 1N4148WSQ-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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| SMCJ12A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| DDZ5V6B-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode; 50nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Leakage current: 50nA
на замовлення 3562 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.75 грн |
| 61+ | 6.55 грн |
| 71+ | 5.67 грн |
| 87+ | 4.64 грн |
| 122+ | 3.30 грн |
| 500+ | 2.28 грн |
| 1000+ | 1.97 грн |
| 3000+ | 1.63 грн |
| UDZ5V6B-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.47 грн |
| 66+ | 6.07 грн |
| 75+ | 5.36 грн |
| 100+ | 4.14 грн |
| AZ23C5V6-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
на замовлення 1127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.89 грн |
| 70+ | 5.75 грн |
| 77+ | 5.20 грн |
| 96+ | 4.20 грн |
| 105+ | 3.81 грн |
| 500+ | 3.05 грн |
| 1000+ | 2.77 грн |
| AP2171DWG-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Active logical level: high
Mounting: SMD
Kind of package: reel; tape
Case: SOT25
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Active logical level: high
Mounting: SMD
Kind of package: reel; tape
Case: SOT25
On-state resistance: 95mΩ
Output current: 1A
Number of channels: 1
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side; USB switch
Kind of output: P-Channel
Type of integrated circuit: power switch
на замовлення 2969 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.38 грн |
| 25+ | 16.47 грн |
| 28+ | 14.63 грн |
| 32+ | 12.55 грн |
| 100+ | 10.23 грн |
| 250+ | 9.11 грн |
| 500+ | 9.03 грн |
| ZVN4525GTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.31A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.31A; Idm: 1.44A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.31A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±40V
On-state resistance: 8.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.44A
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| DMP1045U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Version: ESD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Version: ESD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
на замовлення 2750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.52 грн |
| 30+ | 13.59 грн |
| 50+ | 9.70 грн |
| 100+ | 8.37 грн |
| 500+ | 5.83 грн |
| 1000+ | 5.00 грн |
| 1500+ | 4.57 грн |
| 1N5407G-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD
Case: DO201AD
Mounting: THT
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Reverse recovery time: 2µs
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 125A; DO201AD
Case: DO201AD
Mounting: THT
Features of semiconductor devices: glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 40pF
Reverse recovery time: 2µs
Max. forward voltage: 1.1V
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
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| SMBJ100A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111÷128V; 3.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 100V
Breakdown voltage: 111...128V
Max. forward impulse current: 3.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.22 грн |
| 32+ | 12.79 грн |
| 36+ | 11.11 грн |
| 44+ | 9.19 грн |
| 100+ | 6.95 грн |
| 500+ | 5.51 грн |
| 1000+ | 5.28 грн |
| AP61302QZ6-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.6...5.5V DC
Input voltage: 2.4...5.5V DC
Case: SOT563
Efficiency: 84%
Application: automotive industry
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.6...5.5V DC
Input voltage: 2.4...5.5V DC
Case: SOT563
Efficiency: 84%
Application: automotive industry
Topology: buck
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| 1N5401G-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 40pF
Reverse recovery time: 2µs
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од. на суму грн.

















