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74AUP2G34FW3-7 DIODES INCORPORATED 74AUP2G34.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN0910-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN0910-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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74AUP2G34FZ4-7 DIODES INCORPORATED 74AUP2G34.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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74AUP1G07FZ4-7 DIODES INCORPORATED 74AUP1G07.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Number of channels: 1
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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DDZ19-7 DIODES INCORPORATED DDZ5V1B-DDZ43.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
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B270-13-F DIODES INCORPORATED ds30021.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 70V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 70V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Max. forward voltage: 0.79V
Leakage current: 2mA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SMBJ180A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 200÷220V; 2.06A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 180V
Breakdown voltage: 200...220V
Max. forward impulse current: 2.06A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DFLS220L-7 DIODES INCORPORATED DFLS220L.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 20V; 2A; reel,tape
Mounting: SMD
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 75pF
Leakage current: 1mA
Max. forward voltage: 0.42V
Power dissipation: 1.67W
Load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 40A
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DMG3414U-7 DMG3414U-7 DIODES INCORPORATED DMG3414U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 37mΩ
Power dissipation: 0.78W
Drain current: 3.2A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
на замовлення 162 шт:
термін постачання 14-30 дні (днів)
13+36.47 грн
18+24.89 грн
100+16.34 грн
150+14.73 грн
Мінімальне замовлення: 13
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D1213A-04S-7 D1213A-04S-7 DIODES INCORPORATED D1213A-04S.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; ESD; SOT363; Ch: 4; reel,tape
Mounting: SMD
Number of channels: 4
Max. off-state voltage: 3V
Breakdown voltage: 6V
Case: SOT363
Version: ESD
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
на замовлення 77 шт:
термін постачання 14-30 дні (днів)
20+22.79 грн
25+17.44 грн
28+15.41 грн
Мінімальне замовлення: 20
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D1213A-01SO-7 D1213A-01SO-7 DIODES INCORPORATED ds32185.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
на замовлення 236 шт:
термін постачання 14-30 дні (днів)
34+13.67 грн
40+10.67 грн
48+8.89 грн
65+6.54 грн
103+4.15 грн
Мінімальне замовлення: 34
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D1213A-02SR-7 D1213A-02SR-7 DIODES INCORPORATED D1213A-02SR.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; unidirectional; ESD; SOT143; Ch: 2
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.4W
Number of channels: 2
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOT143
Version: ESD
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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D1213A-01WS-7 D1213A-01WS-7 DIODES INCORPORATED D1213A-01WS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; ESD; SOD323; Ch: 1
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.25W
Number of channels: 1
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOD323
Version: ESD
Semiconductor structure: unidirectional
Application: Ethernet; USB
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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D1213A-04TS-7 D1213A-04TS-7 DIODES INCORPORATED D1213A-04TS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; unidirectional; TSOT26; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: TSOT26
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
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D1213A-01LP4-7B DIODES INCORPORATED D1213A-01LP4.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: DFN1006-2
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-02S-7 DIODES INCORPORATED D1213A-02S.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SC70,SOT353; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SC70; SOT353
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-04SO-7 DIODES INCORPORATED ds32144.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23-6; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23-6
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01LP-7B DIODES INCORPORATED D1213A-01LP.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: DFN1006-2
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-02SM-7 DIODES INCORPORATED D1213A-02SM.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT25; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT25
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01LPQ-7B DIODES INCORPORATED D1213A-01LPQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; DFN1006-2; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: DFN1006-2
Semiconductor structure: bidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01W-7 DIODES INCORPORATED D1213A-01W.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01WSQ-7 DIODES INCORPORATED D1213A-01WSQ.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; SOD323; Ch: 1
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.25W
Number of channels: 1
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOD323
Semiconductor structure: unidirectional
Application: automotive industry; Ethernet; USB
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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D1213A-02SO-7 DIODES INCORPORATED D1213A-02SO.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-02WL-7 DIODES INCORPORATED D1213A_02WL.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-04MR-13 DIODES INCORPORATED D1213A-04MR.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; MSOP10; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: MSOP10
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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DMN601K-7 DMN601K-7 DIODES INCORPORATED DMN601K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 403 шт:
термін постачання 14-30 дні (днів)
84+5.47 грн
107+3.98 грн
139+3.06 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
SMCJ18CA-13-F SMCJ18CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ18CAQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAZ5V1-13-F SMAZ5V1-13-F DIODES INCORPORATED SMAZx-13-F.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 6697 шт:
термін постачання 14-30 дні (днів)
23+20.06 грн
29+14.73 грн
33+12.87 грн
50+9.73 грн
100+8.97 грн
500+7.87 грн
1000+7.28 грн
5000+6.35 грн
Мінімальне замовлення: 23
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DFLZ5V1-7 DFLZ5V1-7 DIODES INCORPORATED DFLZ-ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; PowerDI®123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
36+12.76 грн
38+11.00 грн
Мінімальне замовлення: 36
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DMMT3906W-7-f DMMT3906W-7-f DIODES INCORPORATED DMMT3906W.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
14+33.73 грн
21+20.49 грн
100+12.44 грн
500+9.06 грн
1000+8.13 грн
Мінімальне замовлення: 14
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DMMT3906-7-F DMMT3906-7-F DIODES INCORPORATED DMMT3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
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DMMT3906WQ-7-F DMMT3906WQ-7-F DIODES INCORPORATED DMMT3906W.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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HDS10M-13 DIODES INCORPORATED HDS10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; HDS
Features of semiconductor devices: glass passivated
Case: HDS
Electrical mounting: SMT
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
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BAS20-7-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS20Q-13-F BAS20Q-13-F DIODES INCORPORATED Ds12004.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DW-7 BAS20DW-7 DIODES INCORPORATED Ds30617.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DWQ-13 DIODES INCORPORATED Ds30617.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS20W-7-F DIODES INCORPORATED BAS19W-BAS21W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS70W-05-7-F BAS70W-05-7-F DIODES INCORPORATED BAS70W_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Capacitance: 2pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Reverse recovery time: 5ns
на замовлення 2355 шт:
термін постачання 14-30 дні (днів)
17+28.26 грн
22+19.98 грн
25+17.01 грн
100+9.81 грн
500+7.07 грн
1000+5.98 грн
Мінімальне замовлення: 17
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BAS70W-7-F BAS70W-7-F DIODES INCORPORATED BAS70W_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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BAS70W-05Q-7-F BAS70W-05Q-7-F DIODES INCORPORATED BAS70WQ_-04Q_-05Q_-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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BAS70W-04Q-7-F BAS70W-04Q-7-F DIODES INCORPORATED BAS70WQ_-04Q_-05Q_-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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BAS70W-06-7-F BAS70W-06-7-F DIODES INCORPORATED BAS70W_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Reverse recovery time: 5ns
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BAS70W-06Q-7-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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BAS70WQ-7-F BAS70WQ-7-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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SMBJ13A-13-F SMBJ13A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
25+18.23 грн
31+13.88 грн
35+12.11 грн
46+9.31 грн
Мінімальне замовлення: 25
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QSG0115UDJ-7 DIODES INCORPORATED QSG0115UDJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT963; SMD; 15V; 0.1A; 5ns; reel,tape
Semiconductor structure: common cathode; double x2
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOT963
Capacitance: 8pF
Reverse recovery time: 5ns
Leakage current: 0.1mA
Load current: 0.1A
Power dissipation: 0.26W
Max. forward voltage: 0.4V
Max. forward impulse current: 2A
Max. off-state voltage: 15V
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DMG7401SFG-7 DIODES INCORPORATED DMG7401SFG.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10.8A
Pulsed drain current: -80A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS40LP-7 BAS40LP-7 DIODES INCORPORATED BAS40LP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
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BAT54JW-7-F BAT54JW-7-F DIODES INCORPORATED ds30157.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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SMBJ9.0CA-13-F SMBJ9.0CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.5V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.5V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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D24V0L1B2LP-7B D24V0L1B2LP-7B DIODES INCORPORATED D24V0L1B2LP.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 26V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: DFN1006-2
на замовлення 9888 шт:
термін постачання 14-30 дні (днів)
32+14.59 грн
44+9.82 грн
54+7.87 грн
73+5.84 грн
100+4.99 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
D24V0S1U2TQ-7 D24V0S1U2TQ-7 DIODES INCORPORATED D24V0S1U2TQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Mounting: SMD
Breakdown voltage: 27V
Case: SOD523
Kind of package: reel; tape
на замовлення 1128 шт:
термін постачання 14-30 дні (днів)
36+12.76 грн
41+10.33 грн
48+8.89 грн
63+6.77 грн
100+4.32 грн
500+4.02 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
D5V0P1B2LP-7B D5V0P1B2LP-7B DIODES INCORPORATED D5V0P1B2LP.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: DFN1006-2
на замовлення 9770 шт:
термін постачання 14-30 дні (днів)
56+8.20 грн
60+7.11 грн
71+6.01 грн
92+4.64 грн
147+2.90 грн
500+2.16 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
SMCJ9.0CA-13-F SMCJ9.0CA-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 10÷11.1V; 97.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 97.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 605 шт:
термін постачання 14-30 дні (днів)
14+34.64 грн
17+26.24 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMAJ9.0CA-13-F SMAJ9.0CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SDMK0340L-7-F SDMK0340L-7-F DIODES INCORPORATED ds30239.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape; 160mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.16W
на замовлення 2814 шт:
термін постачання 14-30 дні (днів)
50+9.12 грн
59+7.28 грн
63+6.77 грн
100+5.06 грн
500+4.33 грн
Мінімальне замовлення: 50
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AP64060WU-7 DIODES INCORPORATED AP64060Q_AP64060TQ_AP64060ZQ.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 0.8...26V DC
Output current: 0.6A
Case: TSOT26
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
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D3Z8V2BF-7 DIODES INCORPORATED D3ZxVxBF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 8.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±4%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
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BZT52C9V1Q-7-F BZT52C9V1Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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74AUP2G34FW3-7 74AUP2G34.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN0910-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN0910-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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74AUP2G34FZ4-7 74AUP2G34.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of channels: 2
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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74AUP1G07FZ4-7 74AUP1G07.pdf
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; IN: 1; CMOS; SMD; X2-DFN1410-6; -40÷150°C
Operating temperature: -40...150°C
Supply voltage: 0.8...3.6V DC
Number of inputs: 1
Number of channels: 1
Family: AUP
Kind of integrated circuit: buffer
Technology: CMOS
Type of integrated circuit: digital
Case: X2-DFN1410-6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Mounting: SMD
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DDZ19-7 DDZ5V1B-DDZ43.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 19V; SMD; SOD123; reel,tape; single diode
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
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B270-13-F ds30021.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 70V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 70V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Max. forward voltage: 0.79V
Leakage current: 2mA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SMBJ180A-13-F ds19002.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 200÷220V; 2.06A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 180V
Breakdown voltage: 200...220V
Max. forward impulse current: 2.06A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DFLS220L-7 DFLS220L.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 20V; 2A; reel,tape
Mounting: SMD
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 75pF
Leakage current: 1mA
Max. forward voltage: 0.42V
Power dissipation: 1.67W
Load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 40A
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DMG3414U-7 DMG3414U.pdf
DMG3414U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 0.78W; SOT23
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 37mΩ
Power dissipation: 0.78W
Drain current: 3.2A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
на замовлення 162 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+36.47 грн
18+24.89 грн
100+16.34 грн
150+14.73 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
D1213A-04S-7 D1213A-04S.pdf
D1213A-04S-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; ESD; SOT363; Ch: 4; reel,tape
Mounting: SMD
Number of channels: 4
Max. off-state voltage: 3V
Breakdown voltage: 6V
Case: SOT363
Version: ESD
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
на замовлення 77 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.79 грн
25+17.44 грн
28+15.41 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
D1213A-01SO-7 ds32185.pdf
D1213A-01SO-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
на замовлення 236 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.67 грн
40+10.67 грн
48+8.89 грн
65+6.54 грн
103+4.15 грн
Мінімальне замовлення: 34
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D1213A-02SR-7 D1213A-02SR.pdf
D1213A-02SR-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; unidirectional; ESD; SOT143; Ch: 2
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.4W
Number of channels: 2
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOT143
Version: ESD
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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D1213A-01WS-7 D1213A-01WS.pdf
D1213A-01WS-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; ESD; SOD323; Ch: 1
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.25W
Number of channels: 1
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOD323
Version: ESD
Semiconductor structure: unidirectional
Application: Ethernet; USB
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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D1213A-04TS-7 D1213A-04TS.pdf
D1213A-04TS-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; unidirectional; TSOT26; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: TSOT26
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
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D1213A-01LP4-7B D1213A-01LP4.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: DFN1006-2
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-02S-7 D1213A-02S.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SC70,SOT353; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SC70; SOT353
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-04SO-7 ds32144.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23-6; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23-6
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01LP-7B D1213A-01LP.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; DFN1006-2; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: DFN1006-2
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-02SM-7 D1213A-02SM.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT25; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT25
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01LPQ-7B D1213A-01LPQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; bidirectional; DFN1006-2; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: DFN1006-2
Semiconductor structure: bidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01W-7 D1213A-01W.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 1; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-01WSQ-7 D1213A-01WSQ.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.25W; unidirectional; SOD323; Ch: 1
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.25W
Number of channels: 1
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Case: SOD323
Semiconductor structure: unidirectional
Application: automotive industry; Ethernet; USB
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.85pF
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D1213A-02SO-7 D1213A-02SO.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT23; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT23
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-02WL-7 D1213A_02WL.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; SOT323; Ch: 2; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: SOT323
Semiconductor structure: unidirectional
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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D1213A-04MR-13 D1213A-04MR.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; MSOP10; Ch: 4; reel,tape
Mounting: SMD
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 3.3V
Breakdown voltage: 6V
Case: MSOP10
Semiconductor structure: unidirectional
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 1.2pF
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DMN601K-7 DMN601K.pdf
DMN601K-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 403 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
84+5.47 грн
107+3.98 грн
139+3.06 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
SMCJ18CA-13-F SMCJ_ser.pdf
SMCJ18CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ18CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAZ5V1-13-F SMAZx-13-F.pdf
SMAZ5V1-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 6697 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+20.06 грн
29+14.73 грн
33+12.87 грн
50+9.73 грн
100+8.97 грн
500+7.87 грн
1000+7.28 грн
5000+6.35 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
DFLZ5V1-7 DFLZ-ser.pdf
DFLZ5V1-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; PowerDI®123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: PowerDI®123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.76 грн
38+11.00 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
DMMT3906W-7-f DMMT3906W.pdf
DMMT3906W-7-f
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+33.73 грн
21+20.49 грн
100+12.44 грн
500+9.06 грн
1000+8.13 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DMMT3906-7-F DMMT3906.pdf
DMMT3906-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 225mW; SOT26; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT26
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common base
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DMMT3906WQ-7-F DMMT3906W.pdf
DMMT3906WQ-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 200mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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HDS10M-13 HDS10M.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; HDS
Features of semiconductor devices: glass passivated
Case: HDS
Electrical mounting: SMT
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
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BAS20-7-F Ds12004.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS20Q-13-F Ds12004.pdf
BAS20Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DW-7 Ds30617.pdf
BAS20DW-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.625A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.625A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Kind of package: reel; tape
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BAS20DWQ-13 Ds30617.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAS20W-7-F BAS19W-BAS21W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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BAS70W-05-7-F BAS70W_-04_-05_-06.pdf
BAS70W-05-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Capacitance: 2pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Reverse recovery time: 5ns
на замовлення 2355 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+28.26 грн
22+19.98 грн
25+17.01 грн
100+9.81 грн
500+7.07 грн
1000+5.98 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BAS70W-7-F BAS70W_-04_-05_-06.pdf
BAS70W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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BAS70W-05Q-7-F BAS70WQ_-04Q_-05Q_-06Q.pdf
BAS70W-05Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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BAS70W-04Q-7-F BAS70WQ_-04Q_-05Q_-06Q.pdf
BAS70W-04Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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BAS70W-06-7-F BAS70W_-04_-05_-06.pdf
BAS70W-06-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Reverse recovery time: 5ns
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BAS70W-06Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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BAS70WQ-7-F
BAS70WQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Application: automotive industry
Reverse recovery time: 5ns
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SMBJ13A-13-F SMBJ_ser.pdf
SMBJ13A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷16.5V; 27.9A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+18.23 грн
31+13.88 грн
35+12.11 грн
46+9.31 грн
Мінімальне замовлення: 25
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QSG0115UDJ-7 QSG0115UDJ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT963; SMD; 15V; 0.1A; 5ns; reel,tape
Semiconductor structure: common cathode; double x2
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOT963
Capacitance: 8pF
Reverse recovery time: 5ns
Leakage current: 0.1mA
Load current: 0.1A
Power dissipation: 0.26W
Max. forward voltage: 0.4V
Max. forward impulse current: 2A
Max. off-state voltage: 15V
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DMG7401SFG-7 DMG7401SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10.8A; Idm: -80A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10.8A
Pulsed drain current: -80A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS40LP-7 BAS40LP.pdf
BAS40LP-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X1-DFN1006-2; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
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BAT54JW-7-F ds30157.pdf
BAT54JW-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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SMBJ9.0CA-13-F SMBJ_ser.pdf
SMBJ9.0CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.5V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.5V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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D24V0L1B2LP-7B D24V0L1B2LP.pdf
D24V0L1B2LP-7B
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 26V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: DFN1006-2
на замовлення 9888 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.59 грн
44+9.82 грн
54+7.87 грн
73+5.84 грн
100+4.99 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
D24V0S1U2TQ-7 D24V0S1U2TQ.pdf
D24V0S1U2TQ-7
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Mounting: SMD
Breakdown voltage: 27V
Case: SOD523
Kind of package: reel; tape
на замовлення 1128 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.76 грн
41+10.33 грн
48+8.89 грн
63+6.77 грн
100+4.32 грн
500+4.02 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
D5V0P1B2LP-7B D5V0P1B2LP.pdf
D5V0P1B2LP-7B
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Case: DFN1006-2
на замовлення 9770 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
56+8.20 грн
60+7.11 грн
71+6.01 грн
92+4.64 грн
147+2.90 грн
500+2.16 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
SMCJ9.0CA-13-F SMCJ_ser.pdf
SMCJ9.0CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 10÷11.1V; 97.4A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 97.4A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 605 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.64 грн
17+26.24 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMAJ9.0CA-13-F SMAJ_ser.pdf
SMAJ9.0CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SDMK0340L-7-F ds30239.pdf
SDMK0340L-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape; 160mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Power dissipation: 0.16W
на замовлення 2814 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.12 грн
59+7.28 грн
63+6.77 грн
100+5.06 грн
500+4.33 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
AP64060WU-7 AP64060Q_AP64060TQ_AP64060ZQ.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 0.8÷26VDC; 0.6A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 0.8...26V DC
Output current: 0.6A
Case: TSOT26
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
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D3Z8V2BF-7 D3ZxVxBF.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.4W; 8.2V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±4%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
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BZT52C9V1Q-7-F BZT52Cxx_ser.pdf
BZT52C9V1Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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