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SMBJ7.0CA-13-F SMBJ7.0CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.78÷8.95V; 50A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1727 шт:
термін постачання 21-30 дні (днів)
20+21.35 грн
28+13.73 грн
100+9.15 грн
119+7.70 грн
326+7.25 грн
500+6.94 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMBJ75A-13-F SMBJ75A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3080 шт:
термін постачання 21-30 дні (днів)
17+24.64 грн
23+16.63 грн
29+13.19 грн
100+9.08 грн
152+5.87 грн
419+5.49 грн
1000+5.34 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SMBJ7.5A-13-F SMBJ7.5A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
18+23.82 грн
22+17.69 грн
28+13.88 грн
100+9.08 грн
143+6.41 грн
391+6.02 грн
1000+5.80 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SMBJ7.5CA-13-F SMBJ7.5CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2135 шт:
термін постачання 21-30 дні (днів)
18+23.82 грн
23+17.31 грн
100+11.52 грн
119+7.55 грн
326+7.09 грн
1000+7.02 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AP8801SG-13 AP8801SG-13 DIODES INCORPORATED AP8801.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92%
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Input voltage: 0.8...48V DC
Efficiency: 92%
Kind of integrated circuit: DC/DC converter
Topology: buck
Case: SO8
Frequency: 700kHz
Output current: 0.5A
Type of integrated circuit: PMIC
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S5MC-13-F S5MC-13-F DIODES INCORPORATED S5AC_ser.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: SMC
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)
12+36.96 грн
17+22.57 грн
66+13.88 грн
100+13.80 грн
182+13.04 грн
1000+12.58 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
AP61302Z6-7 DIODES INCORPORATED AP61300_AP61302.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
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AP61300Z6-7 DIODES INCORPORATED AP61300_AP61302.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
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AP61300QZ6-7 DIODES INCORPORATED AP61300Q_AP61302Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
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MJD31C-13 DIODES INCORPORATED ds31625.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
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MJD31CQ-13 DIODES INCORPORATED MJD31CQ_Rev3-3_Nov2016.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
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MJD31CUQ-13 DIODES INCORPORATED MJD31CUQ.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
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AP61200Z6-7 DIODES INCORPORATED AP61200_AP61201_AP61202_AP61203.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT563
Frequency: 1.3MHz
Output voltage: 0.6...3.6V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
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ZVN2110GTA ZVN2110GTA DIODES INCORPORATED ZVN2110G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 961 шт:
термін постачання 21-30 дні (днів)
5+85.42 грн
10+52.62 грн
43+20.97 грн
118+19.83 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
S1N-13-F S1N-13-F DIODES INCORPORATED S1N.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Capacitance: 6pF
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Type of diode: rectifying
на замовлення 4990 шт:
термін постачання 21-30 дні (днів)
28+14.78 грн
40+9.53 грн
100+5.19 грн
264+3.48 грн
724+3.29 грн
2500+3.23 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
DMP34M4SPS-13 DIODES INCORPORATED DMP34M4SPS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 127nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -350A
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DMN3023L-7 DMN3023L-7 DIODES INCORPORATED DMN3023L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Mounting: SMD
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 30V
на замовлення 4798 шт:
термін постачання 21-30 дні (днів)
14+30.39 грн
24+16.24 грн
50+11.82 грн
100+10.30 грн
129+6.94 грн
355+6.56 грн
1000+6.48 грн
3000+6.33 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
ZLLS1000TA ZLLS1000TA DIODES INCORPORATED ZLLS1000.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
на замовлення 421 шт:
термін постачання 21-30 дні (днів)
9+46.81 грн
13+30.43 грн
50+23.34 грн
71+12.58 грн
194+11.90 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BAS16T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
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BAS16TW-7-F DIODES INCORPORATED ds30154.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
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BAS16TWQ-13R-F BAS16TWQ-13R-F DIODES INCORPORATED BAS16TWQ.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 4ns
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FZT968TA DIODES INCORPORATED FZT968.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
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SMAJ40A-13-F SMAJ40A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 2685 шт:
термін постачання 21-30 дні (днів)
34+12.32 грн
57+6.79 грн
100+6.09 грн
197+4.66 грн
540+4.41 грн
Мінімальне замовлення: 34
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SMAJ40AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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AP22652AW6-7 AP22652AW6-7 DIODES INCORPORATED AP22652_AP22653_AP22652A_AP22653A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 65mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2111H-1.8TRG1 AP2111H-1.8TRG1 DIODES INCORPORATED AP2111_Dec2012_DS.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.8V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115M-3.3TRG1 AP2115M-3.3TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2111H-2.5TRG1 AP2111H-2.5TRG1 DIODES INCORPORATED AP2111_Dec2012_DS.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2113KTR-G1 AP2113KTR-G1 DIODES INCORPORATED AP2113.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.6...5.3V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±3%
Number of channels: 1
Input voltage: 2.5...5.5V
Application: fans; motors
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AP2115R5-1.2TRG1 AP2115R5-1.2TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5-2.5TRG1 AP2115R5-2.5TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5A-2.5TRG1 AP2115R5A-2.5TRG1 DIODES INCORPORATED AP2115.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2111MPG-13 DIODES INCORPORATED AP2101_2111.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Case: MSOP8EP
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Active logical level: high
On-state resistance: 90mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Kind of integrated circuit: high-side; USB switch
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DMP213DUFA-7B DIODES INCORPORATED DMP213DUFA.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
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DMT4002LPS-13 DIODES INCORPORATED DMT4002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 116.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
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D5V0P1B2LP-7B D5V0P1B2LP-7B DIODES INCORPORATED D5V0P1B2LP.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
на замовлення 8935 шт:
термін постачання 21-30 дні (днів)
24+17.25 грн
33+11.67 грн
43+8.91 грн
100+5.38 грн
419+2.13 грн
1153+2.01 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
DMP2022LSS-13 DMP2022LSS-13 DIODES INCORPORATED DMP2022LSS-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2499 шт:
термін постачання 21-30 дні (днів)
7+59.13 грн
11+36.15 грн
48+18.91 грн
130+17.85 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMN10H220LQ-7 DMN10H220LQ-7 DIODES INCORPORATED DMN10H220LQ-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2663 шт:
термін постачання 21-30 дні (днів)
14+29.57 грн
19+20.90 грн
25+16.09 грн
100+9.61 грн
158+5.77 грн
435+5.45 грн
1000+5.26 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DMN10H220LVT-7 DMN10H220LVT-7 DIODES INCORPORATED DMN10H220LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LPDW-13 DIODES INCORPORATED DMN10H220LPDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H220LE-13 DIODES INCORPORATED DMN10H220LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H220LFDF-7 DIODES INCORPORATED DMN10H220LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LFVW-7 DIODES INCORPORATED DMN10H220LFVW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220L-13 DMN10H220L-13 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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D24V0S1U2TQ-7 D24V0S1U2TQ-7 DIODES INCORPORATED D24V0S1U2TQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
на замовлення 2752 шт:
термін постачання 21-30 дні (днів)
16+26.28 грн
35+10.98 грн
66+5.80 грн
100+5.09 грн
224+3.99 грн
616+3.77 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
D5V0F1U2S9-7 D5V0F1U2S9-7 DIODES INCORPORATED D5V0F1U2S9.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
на замовлення 9973 шт:
термін постачання 21-30 дні (днів)
12+35.32 грн
25+18.00 грн
100+7.55 грн
171+5.26 грн
468+4.96 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMP32D9UFZ-7B DIODES INCORPORATED DMP32D9UFZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.1A
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Case: X2-DFN0606-3
Gate-source voltage: ±10V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ20A-13-F SMBJ20A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2773 шт:
термін постачання 21-30 дні (днів)
18+23.00 грн
25+15.56 грн
34+11.52 грн
100+7.02 грн
353+6.71 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SMBJ20AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SBRT3U40P1-7 SBRT3U40P1-7 DIODES INCORPORATED SBRT3U40P1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 75A
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
17+24.64 грн
27+14.57 грн
100+9.00 грн
125+7.17 грн
344+6.71 грн
1000+6.48 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SBRT3U60SAF-13 DIODES INCORPORATED SBRT3U60SAF.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 0.5mA
Max. forward impulse current: 40A
Kind of package: reel; tape
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SBRT3M40P1-7 DIODES INCORPORATED SBRT3M40P1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 8µA
Max. forward impulse current: 70A
Kind of package: reel; tape
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SBRT3M30LP-7 DIODES INCORPORATED SBRT3M30LP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN3030-8; Trench SBR®; SMD; 30V; 3A
Type of diode: Schottky rectifying
Case: U-DFN3030-8
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 5µA
Max. forward impulse current: 30A
Kind of package: reel; tape
Reverse recovery time: 16ns
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SBRT3M60P1-7 DIODES INCORPORATED SBRT3M60P1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Leakage current: 0.1mA
Max. forward impulse current: 70A
Kind of package: reel; tape
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SBRT3U60P1-7 DIODES INCORPORATED SBRT3U60P1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Leakage current: 0.15mA
Max. forward impulse current: 70A
Kind of package: reel; tape
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SBRT3U40P1Q-7 DIODES INCORPORATED SBRT3U40P1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 30µA
Max. forward impulse current: 75A
Kind of package: reel; tape
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SBRT3U45SA-13 DIODES INCORPORATED SBRT3U45SA.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SBRT3U45SAF-13 DIODES INCORPORATED SBRT3U45SAF.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SBRT3U60P1Q-7 DIODES INCORPORATED SBRT3U60P1Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
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FCX493TA FCX493TA DIODES INCORPORATED FCX493.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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SMBJ7.0CA-13-F SMBJ_ser.pdf
SMBJ7.0CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.78÷8.95V; 50A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.95V
Max. forward impulse current: 50A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.4mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1727 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.35 грн
28+13.73 грн
100+9.15 грн
119+7.70 грн
326+7.25 грн
500+6.94 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMBJ75A-13-F SMBJ_ser.pdf
SMBJ75A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3080 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.64 грн
23+16.63 грн
29+13.19 грн
100+9.08 грн
152+5.87 грн
419+5.49 грн
1000+5.34 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SMBJ7.5A-13-F SMBJ_ser.pdf
SMBJ7.5A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.82 грн
22+17.69 грн
28+13.88 грн
100+9.08 грн
143+6.41 грн
391+6.02 грн
1000+5.80 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SMBJ7.5CA-13-F SMBJ_ser.pdf
SMBJ7.5CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2135 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.82 грн
23+17.31 грн
100+11.52 грн
119+7.55 грн
326+7.09 грн
1000+7.02 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AP8801SG-13 AP8801.pdf
AP8801SG-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92%
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Input voltage: 0.8...48V DC
Efficiency: 92%
Kind of integrated circuit: DC/DC converter
Topology: buck
Case: SO8
Frequency: 700kHz
Output current: 0.5A
Type of integrated circuit: PMIC
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S5MC-13-F S5AC_ser.pdf
S5MC-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Capacitance: 40pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.15V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Case: SMC
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.96 грн
17+22.57 грн
66+13.88 грн
100+13.80 грн
182+13.04 грн
1000+12.58 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
AP61302Z6-7 AP61300_AP61302.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
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AP61300Z6-7 AP61300_AP61302.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
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AP61300QZ6-7 AP61300Q_AP61302Q.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
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MJD31C-13 ds31625.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
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MJD31CQ-13 MJD31CQ_Rev3-3_Nov2016.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
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MJD31CUQ-13 MJD31CUQ.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
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AP61200Z6-7 AP61200_AP61201_AP61202_AP61203.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT563
Frequency: 1.3MHz
Output voltage: 0.6...3.6V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
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ZVN2110GTA ZVN2110G.pdf
ZVN2110GTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 961 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+85.42 грн
10+52.62 грн
43+20.97 грн
118+19.83 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
S1N-13-F S1N.pdf
S1N-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Capacitance: 6pF
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: SMA
Kind of package: reel; tape
Type of diode: rectifying
на замовлення 4990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+14.78 грн
40+9.53 грн
100+5.19 грн
264+3.48 грн
724+3.29 грн
2500+3.23 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
DMP34M4SPS-13 DMP34M4SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 127nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -350A
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DMN3023L-7 DMN3023L.pdf
DMN3023L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Mounting: SMD
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 30V
на замовлення 4798 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.39 грн
24+16.24 грн
50+11.82 грн
100+10.30 грн
129+6.94 грн
355+6.56 грн
1000+6.48 грн
3000+6.33 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
ZLLS1000TA ZLLS1000.pdf
ZLLS1000TA
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
на замовлення 421 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+46.81 грн
13+30.43 грн
50+23.34 грн
71+12.58 грн
194+11.90 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BAS16T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
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BAS16TW-7-F ds30154.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
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BAS16TWQ-13R-F BAS16TWQ.pdf
BAS16TWQ-13R-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 4ns
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FZT968TA FZT968.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
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SMAJ40A-13-F SMAJ_ser.pdf
SMAJ40A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 5µA
на замовлення 2685 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+12.32 грн
57+6.79 грн
100+6.09 грн
197+4.66 грн
540+4.41 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SMAJ40AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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AP22652AW6-7 AP22652_AP22653_AP22652A_AP22653A.pdf
AP22652AW6-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
On-state resistance: 65mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2111H-1.8TRG1 AP2111_Dec2012_DS.pdf
AP2111H-1.8TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.8V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115M-3.3TRG1 AP2115.pdf
AP2115M-3.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2111H-2.5TRG1 AP2111_Dec2012_DS.pdf
AP2111H-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 2.5V
Output current: 0.6A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2113KTR-G1 AP2113.pdf
AP2113KTR-G1
Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 1.6...5.3V
Output current: 0.6A
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±3%
Number of channels: 1
Input voltage: 2.5...5.5V
Application: fans; motors
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AP2115R5-1.2TRG1 AP2115.pdf
AP2115R5-1.2TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5-2.5TRG1 AP2115.pdf
AP2115R5-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5A-2.5TRG1 AP2115.pdf
AP2115R5A-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2111MPG-13 AP2101_2111.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Case: MSOP8EP
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Active logical level: high
On-state resistance: 90mΩ
Supply voltage: 2.7...5.5V DC
Kind of output: P-Channel
Kind of integrated circuit: high-side; USB switch
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DMP213DUFA-7B DMP213DUFA.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
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DMT4002LPS-13 DMT4002LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 116.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
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D5V0P1B2LP-7B D5V0P1B2LP.pdf
D5V0P1B2LP-7B
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
на замовлення 8935 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+17.25 грн
33+11.67 грн
43+8.91 грн
100+5.38 грн
419+2.13 грн
1153+2.01 грн
Мінімальне замовлення: 24
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DMP2022LSS-13 DMP2022LSS-DTE.pdf
DMP2022LSS-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2499 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+59.13 грн
11+36.15 грн
48+18.91 грн
130+17.85 грн
Мінімальне замовлення: 7
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DMN10H220LQ-7 DMN10H220LQ-7.pdf
DMN10H220LQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2663 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+29.57 грн
19+20.90 грн
25+16.09 грн
100+9.61 грн
158+5.77 грн
435+5.45 грн
1000+5.26 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DMN10H220LVT-7 DMN10H220LVT.pdf
DMN10H220LVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LPDW-13 DMN10H220LPDW.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H220LE-13 DMN10H220LE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H220LFDF-7 DMN10H220LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LFVW-7 DMN10H220LFVW.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220L-13 DMN10H220L.pdf
DMN10H220L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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D24V0S1U2TQ-7 D24V0S1U2TQ.pdf
D24V0S1U2TQ-7
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
на замовлення 2752 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+26.28 грн
35+10.98 грн
66+5.80 грн
100+5.09 грн
224+3.99 грн
616+3.77 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
D5V0F1U2S9-7 D5V0F1U2S9.pdf
D5V0F1U2S9-7
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
на замовлення 9973 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+35.32 грн
25+18.00 грн
100+7.55 грн
171+5.26 грн
468+4.96 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMP32D9UFZ-7B DMP32D9UFZ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.1A
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Case: X2-DFN0606-3
Gate-source voltage: ±10V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ20A-13-F SMBJ_ser.pdf
SMBJ20A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2773 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.00 грн
25+15.56 грн
34+11.52 грн
100+7.02 грн
353+6.71 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SMBJ20AQ-13-F ds40740.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SBRT3U40P1-7 SBRT3U40P1.pdf
SBRT3U40P1-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 75A
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.64 грн
27+14.57 грн
100+9.00 грн
125+7.17 грн
344+6.71 грн
1000+6.48 грн
Мінімальне замовлення: 17
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SBRT3U60SAF-13 SBRT3U60SAF.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 0.5mA
Max. forward impulse current: 40A
Kind of package: reel; tape
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SBRT3M40P1-7 SBRT3M40P1.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 8µA
Max. forward impulse current: 70A
Kind of package: reel; tape
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SBRT3M30LP-7 SBRT3M30LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN3030-8; Trench SBR®; SMD; 30V; 3A
Type of diode: Schottky rectifying
Case: U-DFN3030-8
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 5µA
Max. forward impulse current: 30A
Kind of package: reel; tape
Reverse recovery time: 16ns
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SBRT3M60P1-7 SBRT3M60P1.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Leakage current: 0.1mA
Max. forward impulse current: 70A
Kind of package: reel; tape
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SBRT3U60P1-7 SBRT3U60P1.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Leakage current: 0.15mA
Max. forward impulse current: 70A
Kind of package: reel; tape
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SBRT3U40P1Q-7 SBRT3U40P1.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 30µA
Max. forward impulse current: 75A
Kind of package: reel; tape
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SBRT3U45SA-13 SBRT3U45SA.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SBRT3U45SAF-13 SBRT3U45SAF.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SBRT3U60P1Q-7 SBRT3U60P1Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
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FCX493TA FCX493.pdf
FCX493TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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