Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78805) > Сторінка 1283 з 1314
Фото | Назва | Виробник | Інформація |
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B260S1F-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Capacitance: 75pF Kind of package: reel; tape Max. forward impulse current: 50A Case: SOD123F Max. forward voltage: 0.65V Leakage current: 14mA |
на замовлення 355 шт: термін постачання 21-30 дні (днів) |
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B260AE-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Capacitance: 75pF Kind of package: reel; tape Max. forward impulse current: 50A Case: SMA Max. forward voltage: 0.65V Leakage current: 14.5mA |
на замовлення 2725 шт: термін постачання 21-30 дні (днів) |
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BAS70-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape Max. forward impulse current: 0.1A |
на замовлення 1365 шт: термін постачання 21-30 дні (днів) |
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BAS70-06-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Max. forward voltage: 1V Leakage current: 0.1µA Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Max. forward impulse current: 0.1A Capacitance: 2pF |
на замовлення 5347 шт: термін постачання 21-30 дні (днів) |
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BAS70-06T-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape Type of diode: Schottky switching Case: SOT523 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape Capacitance: 2pF Reverse recovery time: 5ns Leakage current: 0.1µA Power dissipation: 0.15W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
AP7350-15CF4-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; X2WLP4; SMD Manufacturer series: AP7350 Output voltage: 1.5V Output current: 0.15A Voltage drop: 0.75V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.25V Tolerance: ±2% Integrated circuit features: shutdown mode control input Kind of package: reel; tape Case: X2WLP4 Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLV271IW5-7 | DIODES INCORPORATED |
![]() Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 2MHz Mounting: SMT Number of channels: 1 Case: SOT25 Slew rate: 2V/μs Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Open-loop gain: 110dB Power dissipation: 0.22W Operating voltage: 2.7...16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C11S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 11V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 4139 шт: термін постачання 21-30 дні (днів) |
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DMTH4004SCTBQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB Case: TO263AB Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 100A On-state resistance: 3mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 4.7W Polarisation: unipolar Gate charge: 68.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMTH6004SCTBQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB Case: TO263AB Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 4.7W Polarisation: unipolar Gate charge: 95.4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DF01S-T | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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BZX84C7V5-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 7.5V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 1320 шт: термін постачання 21-30 дні (днів) |
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BZX84C7V5S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 7.5V; SMD; reel,tape; SOT363 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BZX84C7V5W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 7.5V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ6.5A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 7.22÷8.3V; 53.6A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...8.3V Max. forward impulse current: 53.6A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 565 шт: термін постачання 21-30 дні (днів) |
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AP2161MPG-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Supply voltage: 2.7...5.5V DC Case: MSOP8EP Mounting: SMD Number of channels: 1 On-state resistance: 95mΩ Output current: 1A Kind of output: P-Channel Active logical level: low Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP431SHARTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.495V; ±0.5%; SOT89; reel,tape Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Case: SOT89 Tolerance: ±0.5% Operating voltage: 2.495...36V Type of integrated circuit: voltage reference source Reference voltage: 2.495V Maximum output current: 0.1A |
на замовлення 765 шт: термін постачання 21-30 дні (днів) |
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AP62300WU-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; TSOT26 Operating temperature: -40...85°C Case: TSOT26 Frequency: 750kHz Output voltage: 0.8...7V DC Output current: 3A Type of integrated circuit: PMIC Input voltage: 4.2...18V DC Efficiency: 83% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
AP62300Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; SOT563 Operating temperature: -40...85°C Case: SOT563 Frequency: 750kHz Output voltage: 0.8...7V DC Output current: 3A Type of integrated circuit: PMIC Input voltage: 4.2...18V DC Efficiency: 83% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ75A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...95.8V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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SMBJ7.5A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Max. off-state voltage: 7.5V Max. forward impulse current: 46.5A Breakdown voltage: 8.33...9.58V Leakage current: 0.1mA Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.6kW |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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SMBJ7.5CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.58V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2140 шт: термін постачання 21-30 дні (днів) |
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S5MC-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 5A Semiconductor structure: single diode Capacitance: 40pF Case: SMC Max. forward voltage: 1.15V Kind of package: reel; tape Max. forward impulse current: 100A |
на замовлення 2888 шт: термін постачання 21-30 дні (днів) |
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AP61302Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Frequency: 2.2MHz Mounting: SMD Output voltage: 0.6...5.5V DC Output current: 3A Type of integrated circuit: PMIC Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Operating temperature: -40...85°C Case: SOT563 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
AP61300Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Frequency: 2.2MHz Mounting: SMD Output voltage: 0.6...5.5V DC Output current: 3A Type of integrated circuit: PMIC Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Operating temperature: -40...85°C Case: SOT563 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
AP61300QZ6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD Frequency: 2.2MHz Mounting: SMD Output voltage: 0.6...5.5V DC Output current: 3A Type of integrated circuit: PMIC Application: automotive industry Input voltage: 2.4...5.5V DC Efficiency: 84% Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck Operating temperature: -40...85°C Case: SOT563 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MJD31C-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Quantity in set/package: 2500pcs. Pulsed collector current: 5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MJD31CQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry Quantity in set/package: 2500pcs. Pulsed collector current: 5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MJD31CUQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 16W Case: DPAK; TO252 Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry Quantity in set/package: 2500pcs. Pulsed collector current: 5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
AP61200Z6-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD Mounting: SMD Operating temperature: -40...125°C Case: SOT563 Frequency: 1.3MHz Output voltage: 0.6...3.6V DC Output current: 2A Type of integrated circuit: PMIC Input voltage: 2.3...5.5V DC Efficiency: 89% Integrated circuit features: PFM switching mode Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Topology: buck |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ZVN2110GTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.5A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 961 шт: термін постачання 21-30 дні (днів) |
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DMP34M4SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: -30V Drain current: -17A On-state resistance: 6mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 127nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -350A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMN3023L-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD Case: SOT23 Drain-source voltage: 30V Drain current: 5.8A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 0.6W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
на замовлення 4438 шт: термін постачання 21-30 дні (днів) |
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ZLLS1000TA | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 1.16A Semiconductor structure: single diode Capacitance: 28pF Max. forward impulse current: 6.4A Kind of package: reel; tape Power dissipation: 0.8W |
на замовлення 3421 шт: термін постачання 21-30 дні (днів) |
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BAS16T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.155A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: SOT523 Reverse recovery time: 4ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAS16TW-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Semiconductor structure: triple independent Features of semiconductor devices: small signal Kind of package: reel; tape Case: SOT363 Reverse recovery time: 4ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS16TWQ-13R-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: triple independent Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 0.5A Case: SOT363 Max. forward voltage: 1.25V Application: automotive industry Capacitance: 2pF Reverse recovery time: 4ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FZT968TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 6A Power dissipation: 3W Case: SOT223 Pulsed collector current: 20A Current gain: 50...1000 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 80MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AP2115M-3.3TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 3.3V Output current: 1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2113KTR-G1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Number of channels: 1 Application: fans; motors Input voltage: 2.5...5.5V Kind of package: reel; tape Kind of voltage regulator: adjustable; LDO; linear Mounting: SMD Operating temperature: -40...85°C Case: SOT25 Tolerance: ±3% Output voltage: 1.6...5.3V Output current: 0.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2115R5-1.2TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.3V Output voltage: 1.2V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2115R5-2.5TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 2.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2115R5A-2.5TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.75V Output voltage: 2.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 2.5...6V Integrated circuit features: shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
AP2111MPG-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Output current: 2A Case: MSOP8EP Mounting: SMD Kind of package: reel; tape Number of channels: 1 Active logical level: high Kind of output: P-Channel On-state resistance: 90mΩ Supply voltage: 2.7...5.5V DC Kind of integrated circuit: high-side; USB switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMP213DUFA-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW Mounting: SMD Case: X2-DFN0806-3 Drain-source voltage: -25V Drain current: -125mA On-state resistance: 13Ω Type of transistor: P-MOSFET Power dissipation: 0.36W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 0.35nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT4002LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W Case: PowerDI5060-8 Drain-source voltage: 40V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 116.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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D5V0P1B2LP-7B | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; bidirectional; DFN1006-2 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 0.1µA |
на замовлення 8935 шт: термін постачання 21-30 дні (днів) |
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DMP2022LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 13mΩ Mounting: SMD Kind of channel: enhancement Kind of package: 13 inch reel; tape |
на замовлення 2435 шт: термін постачання 21-30 дні (днів) |
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D24V0S1U2TQ-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 27V; unidirectional; SOD523 Type of diode: TVS Max. off-state voltage: 24V Breakdown voltage: 27V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD |
на замовлення 2752 шт: термін постачання 21-30 дні (днів) |
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D5V0F1U2S9-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Semiconductor structure: unidirectional Case: SOD923 Mounting: SMD Leakage current: 0.1µA Max. forward impulse current: 1.5A |
на замовлення 9973 шт: термін постачання 21-30 дні (днів) |
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DMP32D9UFZ-7B | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -100mA Pulsed drain current: -0.7A Power dissipation: 0.39W Case: X2-DFN0606-3 Gate-source voltage: ±10V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.35nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ20A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 638 шт: термін постачання 21-30 дні (днів) |
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SMBJ20AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...25.5V Max. forward impulse current: 18.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SBRT3U40P1-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.49V Max. forward impulse current: 75A Kind of package: reel; tape |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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SBRT3U60SAF-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 60V; 3A Type of diode: Schottky rectifying Case: SMA flat Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.53V Leakage current: 0.5mA Max. forward impulse current: 40A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBRT3M40P1-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.53V Leakage current: 8µA Max. forward impulse current: 70A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBRT3M30LP-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; U-DFN3030-8; Trench SBR®; SMD; 30V; 3A Type of diode: Schottky rectifying Case: U-DFN3030-8 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.49V Leakage current: 5µA Max. forward impulse current: 30A Kind of package: reel; tape Reverse recovery time: 16ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBRT3M60P1-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Leakage current: 0.1mA Max. forward impulse current: 70A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBRT3U60P1-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.56V Leakage current: 0.15mA Max. forward impulse current: 70A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBRT3U40P1Q-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A Type of diode: Schottky rectifying Case: PowerDI®123 Technology: Trench SBR® Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.49V Leakage current: 30µA Max. forward impulse current: 75A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
B260S1F-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SOD123F
Max. forward voltage: 0.65V
Leakage current: 14mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SOD123F
Max. forward voltage: 0.65V
Leakage current: 14mA
на замовлення 355 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.23 грн |
29+ | 13.38 грн |
100+ | 8.10 грн |
173+ | 5.20 грн |
B260AE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SMA
Max. forward voltage: 0.65V
Leakage current: 14.5mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 75pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SMA
Max. forward voltage: 0.65V
Leakage current: 14.5mA
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.47 грн |
38+ | 10.24 грн |
100+ | 6.57 грн |
167+ | 5.35 грн |
458+ | 5.05 грн |
1000+ | 4.89 грн |
BAS70-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 0.1A
на замовлення 1365 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.70 грн |
56+ | 6.88 грн |
78+ | 4.94 грн |
100+ | 4.23 грн |
530+ | 1.70 грн |
BAS70-06-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward impulse current: 0.1A
Capacitance: 2pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward impulse current: 0.1A
Capacitance: 2pF
на замовлення 5347 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.70 грн |
55+ | 7.03 грн |
100+ | 4.23 грн |
583+ | 1.54 грн |
1600+ | 1.46 грн |
BAS70-06T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.15W
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В кошику
од. на суму грн.
AP7350-15CF4-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; X2WLP4; SMD
Manufacturer series: AP7350
Output voltage: 1.5V
Output current: 0.15A
Voltage drop: 0.75V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.25V
Tolerance: ±2%
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Case: X2WLP4
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; X2WLP4; SMD
Manufacturer series: AP7350
Output voltage: 1.5V
Output current: 0.15A
Voltage drop: 0.75V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.25V
Tolerance: ±2%
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Case: X2WLP4
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
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В кошику
од. на суму грн.
TLV271IW5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Mounting: SMT
Number of channels: 1
Case: SOT25
Slew rate: 2V/μs
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Open-loop gain: 110dB
Power dissipation: 0.22W
Operating voltage: 2.7...16V
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; 2.7÷16V; Ch: 1; SOT25; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Mounting: SMT
Number of channels: 1
Case: SOT25
Slew rate: 2V/μs
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Open-loop gain: 110dB
Power dissipation: 0.22W
Operating voltage: 2.7...16V
товару немає в наявності
В кошику
од. на суму грн.
BZT52C11S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 4139 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.41 грн |
77+ | 4.97 грн |
172+ | 2.23 грн |
655+ | 1.36 грн |
1799+ | 1.29 грн |
DMTH4004SCTBQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 4.7W
Polarisation: unipolar
Gate charge: 68.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 4.7W
Polarisation: unipolar
Gate charge: 68.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
товару немає в наявності
В кошику
од. на суму грн.
DMTH6004SCTBQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 4.7W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 4.7W
Polarisation: unipolar
Gate charge: 95.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
товару немає в наявності
В кошику
од. на суму грн.
DF01S-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 71 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.87 грн |
16+ | 23.93 грн |
BZX84C7V5-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 1320 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.40 грн |
88+ | 4.36 грн |
110+ | 3.48 грн |
182+ | 2.10 грн |
746+ | 1.21 грн |
BZX84C7V5S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
товару немає в наявності
В кошику
од. на суму грн.
BZX84C7V5W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 7.5V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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SMBJ6.5A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22÷8.3V; 53.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22÷8.3V; 53.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...8.3V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 565 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.99 грн |
19+ | 20.18 грн |
25+ | 15.29 грн |
100+ | 8.49 грн |
144+ | 6.27 грн |
394+ | 5.89 грн |
AP2161MPG-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Case: MSOP8EP
Mounting: SMD
Number of channels: 1
On-state resistance: 95mΩ
Output current: 1A
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Supply voltage: 2.7...5.5V DC
Case: MSOP8EP
Mounting: SMD
Number of channels: 1
On-state resistance: 95mΩ
Output current: 1A
Kind of output: P-Channel
Active logical level: low
Kind of package: reel; tape
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AP431SHARTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT89; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT89
Tolerance: ±0.5%
Operating voltage: 2.495...36V
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT89; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT89
Tolerance: ±0.5%
Operating voltage: 2.495...36V
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Maximum output current: 0.1A
на замовлення 765 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
26+ | 14.91 грн |
31+ | 12.38 грн |
100+ | 9.48 грн |
137+ | 6.57 грн |
377+ | 6.19 грн |
AP62300WU-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; TSOT26
Operating temperature: -40...85°C
Case: TSOT26
Frequency: 750kHz
Output voltage: 0.8...7V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 4.2...18V DC
Efficiency: 83%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; TSOT26
Operating temperature: -40...85°C
Case: TSOT26
Frequency: 750kHz
Output voltage: 0.8...7V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 4.2...18V DC
Efficiency: 83%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
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AP62300Z6-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; SOT563
Operating temperature: -40...85°C
Case: SOT563
Frequency: 750kHz
Output voltage: 0.8...7V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 4.2...18V DC
Efficiency: 83%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; SOT563
Operating temperature: -40...85°C
Case: SOT563
Frequency: 750kHz
Output voltage: 0.8...7V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 4.2...18V DC
Efficiency: 83%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Mounting: SMD
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SMBJ75A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 83.3÷95.8V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...95.8V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.41 грн |
28+ | 13.99 грн |
35+ | 11.16 грн |
100+ | 7.64 грн |
159+ | 5.66 грн |
437+ | 5.35 грн |
500+ | 5.20 грн |
1000+ | 5.12 грн |
SMBJ7.5A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 7.5V
Max. forward impulse current: 46.5A
Breakdown voltage: 8.33...9.58V
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Max. off-state voltage: 7.5V
Max. forward impulse current: 46.5A
Breakdown voltage: 8.33...9.58V
Leakage current: 0.1mA
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
23+ | 16.82 грн |
29+ | 13.23 грн |
100+ | 8.64 грн |
147+ | 6.12 грн |
404+ | 5.73 грн |
1000+ | 5.58 грн |
SMBJ7.5CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.33÷9.58V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.58V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2140 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.88 грн |
23+ | 17.35 грн |
100+ | 11.47 грн |
119+ | 7.57 грн |
326+ | 7.19 грн |
1000+ | 7.03 грн |
S5MC-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 5A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 5A; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 5A
Semiconductor structure: single diode
Capacitance: 40pF
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
Max. forward impulse current: 100A
на замовлення 2888 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.05 грн |
17+ | 22.63 грн |
65+ | 13.91 грн |
179+ | 13.15 грн |
1000+ | 12.61 грн |
AP61302Z6-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
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AP61300Z6-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
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AP61300QZ6-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.4÷5.5VDC; Uout: 0.6÷5.5VDC; 3A; SMD
Frequency: 2.2MHz
Mounting: SMD
Output voltage: 0.6...5.5V DC
Output current: 3A
Type of integrated circuit: PMIC
Application: automotive industry
Input voltage: 2.4...5.5V DC
Efficiency: 84%
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Operating temperature: -40...85°C
Case: SOT563
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MJD31C-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
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MJD31CQ-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
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MJD31CUQ-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 16W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 16W
Case: DPAK; TO252
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Quantity in set/package: 2500pcs.
Pulsed collector current: 5A
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AP61200Z6-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT563
Frequency: 1.3MHz
Output voltage: 0.6...3.6V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Integrated circuit features: PFM switching mode
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.3÷5.5VDC; Uout: 0.6÷3.6VDC; 2A; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT563
Frequency: 1.3MHz
Output voltage: 0.6...3.6V DC
Output current: 2A
Type of integrated circuit: PMIC
Input voltage: 2.3...5.5V DC
Efficiency: 89%
Integrated circuit features: PFM switching mode
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Topology: buck
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ZVN2110GTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.5A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.5A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 961 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 85.62 грн |
10+ | 52.75 грн |
43+ | 21.02 грн |
118+ | 19.88 грн |
DMP34M4SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 127nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -350A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -350A; 3W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -30V
Drain current: -17A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 127nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -350A
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DMN3023L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Case: SOT23
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD
Case: SOT23
Drain-source voltage: 30V
Drain current: 5.8A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 4438 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.46 грн |
24+ | 16.28 грн |
50+ | 11.85 грн |
100+ | 10.32 грн |
129+ | 6.96 грн |
354+ | 6.57 грн |
1000+ | 6.50 грн |
3000+ | 6.35 грн |
ZLLS1000TA |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1.16A; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.16A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward impulse current: 6.4A
Kind of package: reel; tape
Power dissipation: 0.8W
на замовлення 3421 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 46.93 грн |
13+ | 30.50 грн |
50+ | 23.39 грн |
71+ | 12.69 грн |
195+ | 12.00 грн |
3000+ | 11.85 грн |
BAS16T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT523
Reverse recovery time: 4ns
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BAS16TW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SOT363
Reverse recovery time: 4ns
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BAS16TWQ-13R-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT363
Max. forward voltage: 1.25V
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 4ns
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FZT968TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 6A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 20A
Current gain: 50...1000
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
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AP2115M-3.3TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2113KTR-G1 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Application: fans; motors
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT25
Tolerance: ±3%
Output voltage: 1.6...5.3V
Output current: 0.6A
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.6÷5.3V; 0.6A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Application: fans; motors
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Case: SOT25
Tolerance: ±3%
Output voltage: 1.6...5.3V
Output current: 0.6A
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AP2115R5-1.2TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.2V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2115R5A-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.75V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 2.5...6V
Integrated circuit features: shutdown mode control input
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AP2111MPG-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Case: MSOP8EP
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Active logical level: high
Kind of output: P-Channel
On-state resistance: 90mΩ
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side; USB switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Output current: 2A
Case: MSOP8EP
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Active logical level: high
Kind of output: P-Channel
On-state resistance: 90mΩ
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: high-side; USB switch
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DMP213DUFA-7B |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
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DMT4002LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 116.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Case: PowerDI5060-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 116.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
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D5V0P1B2LP-7B |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6V; bidirectional; DFN1006-2
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.1µA
на замовлення 8935 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.29 грн |
33+ | 11.70 грн |
43+ | 8.93 грн |
100+ | 5.39 грн |
420+ | 2.15 грн |
1155+ | 2.03 грн |
DMP2022LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: 13 inch reel; tape
на замовлення 2435 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.28 грн |
11+ | 36.24 грн |
48+ | 18.96 грн |
131+ | 17.89 грн |
D24V0S1U2TQ-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 27V; unidirectional; SOD523
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
на замовлення 2752 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
35+ | 11.01 грн |
66+ | 5.81 грн |
100+ | 5.11 грн |
226+ | 4.00 грн |
621+ | 3.78 грн |
D5V0F1U2S9-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 1.5A
на замовлення 9973 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.40 грн |
25+ | 18.04 грн |
100+ | 7.57 грн |
172+ | 5.27 грн |
472+ | 4.97 грн |
DMP32D9UFZ-7B |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100mA
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Case: X2-DFN0606-3
Gate-source voltage: ±10V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100mA; Idm: -0.7A; 390mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100mA
Pulsed drain current: -0.7A
Power dissipation: 0.39W
Case: X2-DFN0606-3
Gate-source voltage: ±10V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ20A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 638 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
25+ | 15.60 грн |
34+ | 11.54 грн |
100+ | 7.03 грн |
346+ | 6.73 грн |
SMBJ20AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.2÷25.5V; 18.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 18.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SBRT3U40P1-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 75A
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.70 грн |
27+ | 14.60 грн |
100+ | 9.02 грн |
125+ | 7.19 грн |
344+ | 6.73 грн |
1000+ | 6.50 грн |
SBRT3U60SAF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 0.5mA
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 0.5mA
Max. forward impulse current: 40A
Kind of package: reel; tape
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SBRT3M40P1-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 8µA
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 8µA
Max. forward impulse current: 70A
Kind of package: reel; tape
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SBRT3M30LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN3030-8; Trench SBR®; SMD; 30V; 3A
Type of diode: Schottky rectifying
Case: U-DFN3030-8
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 5µA
Max. forward impulse current: 30A
Kind of package: reel; tape
Reverse recovery time: 16ns
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; U-DFN3030-8; Trench SBR®; SMD; 30V; 3A
Type of diode: Schottky rectifying
Case: U-DFN3030-8
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 5µA
Max. forward impulse current: 30A
Kind of package: reel; tape
Reverse recovery time: 16ns
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SBRT3M60P1-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Leakage current: 0.1mA
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Leakage current: 0.1mA
Max. forward impulse current: 70A
Kind of package: reel; tape
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В кошику
од. на суму грн.
SBRT3U60P1-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Leakage current: 0.15mA
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Leakage current: 0.15mA
Max. forward impulse current: 70A
Kind of package: reel; tape
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В кошику
од. на суму грн.
SBRT3U40P1Q-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 30µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 40V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Leakage current: 30µA
Max. forward impulse current: 75A
Kind of package: reel; tape
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В кошику
од. на суму грн.