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SBRT3U45SA-13 DIODES INCORPORATED SBRT3U45SA.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SBRT3U45SAF-13 DIODES INCORPORATED SBRT3U45SAF.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SBRT3U60P1Q-7 DIODES INCORPORATED SBRT3U60P1Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
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BC857BFA-7B DIODES INCORPORATED BC857BFA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 200...470
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...340MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
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74LVC1G00W5-7 74LVC1G00W5-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9CA0D3&compId=74LVC1G00.pdf?ci_sign=28b1816bdbcacac5ade0f1871e28b56dfc2ef59b Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F861C0D3&compId=74LVC1G00.pdf?ci_sign=2f4c57e4b3bd1ba3cd783fc5f3f9dc79487a9adf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F862C0D3&compId=74LVC1G00.pdf?ci_sign=c8b2ab1224b299feb4e567f2022566859f5a29c7 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9BA0D3&compId=74LVC1G00.pdf?ci_sign=6d393f324f1157640058f9214df18d5651ce1511 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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DMP2004K-7 DMP2004K-7 DIODES INCORPORATED DMP2004K.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3260 шт:
термін постачання 21-30 дні (днів)
21+19.76 грн
42+9.17 грн
58+6.61 грн
100+5.68 грн
283+3.16 грн
778+2.98 грн
3000+2.91 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DMN2040LTS-13 DMN2040LTS-13 DIODES INCORPORATED ds31941.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Pulsed drain current: 30A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2016 шт:
термін постачання 21-30 дні (днів)
9+49.40 грн
14+28.13 грн
76+11.85 грн
208+11.16 грн
Мінімальне замовлення: 9
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BAS16WQ-7-F DIODES INCORPORATED Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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MSB30KH-13 DIODES INCORPORATED MSB30KH.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 3A; Ifsm: 110A
Load current: 3A
Max. forward impulse current: 110A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: MSBL
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
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SMAJ200CA-13-F SMAJ200CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BZT52C2V0-7-F BZT52C2V0-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±4.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 4187 шт:
термін постачання 21-30 дні (днів)
32+13.17 грн
49+7.87 грн
100+4.13 грн
500+2.78 грн
575+1.54 грн
1580+1.47 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SMBJ22A-13-F SMBJ22A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMG3404L-7 DMG3404L-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C792BBE452F8BF&compId=DMG3404L.pdf?ci_sign=43c53fa63d912c6c8705a561a042cce84bd89e51 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 412 шт:
термін постачання 21-30 дні (днів)
14+31.29 грн
22+17.97 грн
27+14.22 грн
100+9.94 грн
147+6.12 грн
404+5.73 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DMG3406L-13 DMG3406L-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C79BBF7A2078BF&compId=DMG3406L.pdf?ci_sign=32d58b8a920b330699f73edcb454730fa26ea4a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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DMG3402LQ-7 DMG3402LQ-7 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
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DMG3401LSN-7 DIODES INCORPORATED DMG3401LSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
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DMG3401LSNQ-7 DIODES INCORPORATED DMG3401LSNQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
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DMG3407SSN-7 DIODES INCORPORATED DMG3407SSN.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
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DMG3402LQ-13 DMG3402LQ-13 DIODES INCORPORATED DMG3402LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
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DMG3404L-13 DMG3404L-13 DIODES INCORPORATED DMG3404L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 13.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
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MMBTA56-7-F MMBTA56-7-F DIODES INCORPORATED MMBTA55Q_MMBTA56Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 3000pcs.
на замовлення 2051 шт:
термін постачання 21-30 дні (днів)
42+9.88 грн
66+5.81 грн
100+3.85 грн
500+1.79 грн
1376+1.69 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
MMBTA56Q-7-F DIODES INCORPORATED MMBTA55Q_MMBTA56Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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SMCJ28A-13-F SMCJ28A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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FZT953QTA FZT953QTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8DB7BF3F8520CE&compId=FZT953.pdf?ci_sign=8f57b6558ce292302c3ba3435fdd65b77bc82c45 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Current gain: 15...200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Pulsed collector current: 10A
на замовлення 463 шт:
термін постачання 21-30 дні (днів)
6+74.92 грн
10+48.93 грн
28+32.64 грн
76+30.81 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FZT953TA FZT953TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8DB7BF3F8520CE&compId=FZT953.pdf?ci_sign=8f57b6558ce292302c3ba3435fdd65b77bc82c45 description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
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DMP2035U-7 DMP2035U-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED89A9967C2CA18&compId=DMP2035U.pdf?ci_sign=cabb7bd9788d193bfd681e481be2f6257b4bb2ad Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.81W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
на замовлення 772 шт:
термін постачання 21-30 дні (днів)
14+30.46 грн
25+15.82 грн
34+11.31 грн
100+8.33 грн
200+4.51 грн
549+4.28 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DMP2035UVT-7 DMP2035UVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA3ED50524A748&compId=DMP2035UVT.pdf?ci_sign=9f296fb25f5c4370bc860ca04444f942409f1a72 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Case: TSOT26
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
на замовлення 4159 шт:
термін постачання 21-30 дні (днів)
11+40.84 грн
16+24.31 грн
25+19.04 грн
100+14.14 грн
109+8.33 грн
299+7.87 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
US1K-13-F US1K-13-F DIODES INCORPORATED ds16008.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. forward voltage: 1.7V
на замовлення 2184 шт:
термін постачання 21-30 дні (днів)
30+14.00 грн
40+9.71 грн
100+6.19 грн
262+3.44 грн
719+3.21 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DGD21814S14-13 DIODES INCORPORATED DGD21814.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
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DMN6075S-7 DMN6075S-7 DIODES INCORPORATED DMN6075S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.12Ω
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 844 шт:
термін постачання 21-30 дні (днів)
18+23.05 грн
25+15.44 грн
31+12.46 грн
51+7.57 грн
100+6.35 грн
184+4.82 грн
500+4.74 грн
506+4.59 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
RS1D-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 150ns
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RS1DB-13-F DIODES INCORPORATED ds15002.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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B0540W-7-F B0540W-7-F DIODES INCORPORATED B0540W.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
на замовлення 978 шт:
термін постачання 21-30 дні (днів)
46+9.06 грн
63+6.12 грн
80+4.80 грн
100+4.27 грн
500+3.13 грн
511+1.76 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
DESD5V0S1BLD-7B DIODES INCORPORATED DESD5V0S1BLD.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
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BAS70-06Q-13-F BAS70-06Q-13-F DIODES INCORPORATED BAS70-05Q-BAS70-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
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BAS70-06Q-7-F BAS70-06Q-7-F DIODES INCORPORATED BAS70-05Q-BAS70-06Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
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AP3125BKTR-G1 AP3125BKTR-G1 DIODES INCORPORATED AP3125B.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Operating temperature: -20...125°C
Case: SOT26
Supply voltage: 10...25V
Frequency: 20...70kHz
Output current: 0.35A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: SMD
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SMBJ40CA-13-F SMBJ40CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
35+12.68 грн
45+8.94 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
BZT52HC9V1WF-7 DIODES INCORPORATED BZT52HC2V4WF%20-%20BZT52HC47WF.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 9.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 9.1V
Power dissipation: 0.83W
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AP7375-33W5-7 AP7375-33W5-7 DIODES INCORPORATED AP7375.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT25; SMD
Operating temperature: -40...85°C
Case: SOT25
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.35A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...45V
Kind of package: reel; tape
Manufacturer series: AP7375
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
на замовлення 2076 шт:
термін постачання 21-30 дні (днів)
9+46.10 грн
15+25.76 грн
25+21.10 грн
88+10.32 грн
240+9.79 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
AP7375-33Y-13 DIODES INCORPORATED AP7375.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD
Operating temperature: -40...85°C
Case: SOT89
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.35A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...45V
Kind of package: reel; tape
Manufacturer series: AP7375
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
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BC846B-13-F BC846B-13-F DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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74HCT08S14-13 74HCT08S14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70D9D4B6540D3&compId=74HCT08.pdf?ci_sign=79ca381c05d927ddebac96128a7bedae1f32db24 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
на замовлення 913 шт:
термін постачання 21-30 дні (днів)
12+36.22 грн
19+20.26 грн
25+16.44 грн
100+12.16 грн
134+6.80 грн
368+6.42 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
74HCT08T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F5C0D3&compId=74HCT08.pdf?ci_sign=7b2221fed63b623caffb82245b5cf0c4171ea839 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
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74LVC2G06FX4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710E4871520D3&compId=74LVC2G06.pdf?ci_sign=68bdaccebfa147d4a75ccbc7a4b511ef384ed246 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
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74LVC2G06FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710E4871620D3&compId=74LVC2G06.pdf?ci_sign=8cd6920e0f2d7f23b99ec4690f8a49c2f2e306f4 Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
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74LVC2G06W6-7 74LVC2G06W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB27600D3&compId=74LVC2G06.pdf?ci_sign=ef87cd3347e87ebf9e0986e4b7e0fd60ac4f335d Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
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DGD2110S16-13 DIODES INCORPORATED DGD2110-2113.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Mounting: SMD
Case: SO16
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Supply voltage: 3.3...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Impulse rise time: 35ns
Pulse fall time: 25ns
Number of channels: 1
Kind of package: reel; tape
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FZT1049ATA FZT1049ATA DIODES INCORPORATED FZT1049A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 300...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 801 шт:
термін постачання 21-30 дні (днів)
8+54.34 грн
12+33.03 грн
25+29.13 грн
36+25.23 грн
98+23.85 грн
Мінімальне замовлення: 8
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MMSZ5227B-7-F MMSZ5227B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)
63+6.58 грн
99+3.90 грн
117+3.29 грн
173+2.22 грн
607+1.48 грн
1669+1.39 грн
Мінімальне замовлення: 63
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MMSZ5227BQ-7-F MMSZ5227BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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DZT5401-13 DIODES INCORPORATED DZT5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT223
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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DXT5401-13 DIODES INCORPORATED ds31226.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT89
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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MMST5401-7-F MMST5401-7-F DIODES INCORPORATED MMST5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 200mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
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MMDT5401Q-7-F DIODES INCORPORATED MMDT5401Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT363
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
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MMST5401Q-7-F DIODES INCORPORATED MMST5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.2A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
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AP7366-33W5-7 AP7366-33W5-7 DIODES INCORPORATED AP7366.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT25; SMD
Manufacturer series: AP7366
Kind of package: reel; tape
Case: SOT25
Tolerance: ±1%
Output voltage: 3.3V
Output current: 0.6A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 1334 шт:
термін постачання 21-30 дні (днів)
13+32.11 грн
19+20.95 грн
24+16.05 грн
100+7.11 грн
162+5.50 грн
444+5.20 грн
Мінімальне замовлення: 13
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SBRT3U45SA-13 SBRT3U45SA.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SBRT3U45SAF-13 SBRT3U45SAF.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; Trench SBR®; SMD; 45V; 3A
Type of diode: Schottky rectifying
Case: SMA flat
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 30µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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SBRT3U60P1Q-7 SBRT3U60P1Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; Trench SBR®; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: PowerDI®123
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Application: automotive industry
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BC857BFA-7B BC857BFA.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 435mW; X2-DFN0806-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 435mW
Case: X2-DFN0806-3
Current gain: 200...470
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...340MHz
Quantity in set/package: 10000pcs.
Pulsed collector current: 0.2A
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74LVC1G00W5-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9CA0D3&compId=74LVC1G00.pdf?ci_sign=28b1816bdbcacac5ade0f1871e28b56dfc2ef59b
74LVC1G00W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT25; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT25
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F861C0D3&compId=74LVC1G00.pdf?ci_sign=2f4c57e4b3bd1ba3cd783fc5f3f9dc79487a9adf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1010-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70EC7F862C0D3&compId=74LVC1G00.pdf?ci_sign=c8b2ab1224b299feb4e567f2022566859f5a29c7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; X2-DFN1410-6; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G00SE-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70F032F9BA0D3&compId=74LVC1G00.pdf?ci_sign=6d393f324f1157640058f9214df18d5651ce1511
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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DMP2004K-7 DMP2004K.pdf
DMP2004K-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -600mA
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance:
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+19.76 грн
42+9.17 грн
58+6.61 грн
100+5.68 грн
283+3.16 грн
778+2.98 грн
3000+2.91 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DMN2040LTS-13 ds31941.pdf
DMN2040LTS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Pulsed drain current: 30A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2016 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.40 грн
14+28.13 грн
76+11.85 грн
208+11.16 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BAS16WQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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MSB30KH-13 MSB30KH.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 3A; Ifsm: 110A
Load current: 3A
Max. forward impulse current: 110A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: MSBL
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
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SMAJ200CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ200CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 224÷248V; 1.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 200V
Breakdown voltage: 224...248V
Max. forward impulse current: 1.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BZT52C2V0-7-F BZT52Cxx_ser.pdf
BZT52C2V0-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 2V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±4.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 4187 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.17 грн
49+7.87 грн
100+4.13 грн
500+2.78 грн
575+1.54 грн
1580+1.47 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SMBJ22A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ22A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMG3404L-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C792BBE452F8BF&compId=DMG3404L.pdf?ci_sign=43c53fa63d912c6c8705a561a042cce84bd89e51
DMG3404L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.8A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.8A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 412 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.29 грн
22+17.97 грн
27+14.22 грн
100+9.94 грн
147+6.12 грн
404+5.73 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DMG3406L-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C79BBF7A2078BF&compId=DMG3406L.pdf?ci_sign=32d58b8a920b330699f73edcb454730fa26ea4a0
DMG3406L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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DMG3402LQ-7 DMG3402LQ.pdf
DMG3402LQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
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DMG3401LSN-7 DMG3401LSN.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
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DMG3401LSNQ-7 DMG3401LSNQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -30A; 1.2W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 25.1nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -30A
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DMG3407SSN-7 DMG3407SSN.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -30A; 1.1W; SC59
Mounting: SMD
Case: SC59
Drain-source voltage: -30V
Drain current: -3.6A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
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DMG3402LQ-13 DMG3402LQ.pdf
DMG3402LQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 11.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
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DMG3404L-13 DMG3404L.pdf
DMG3404L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 30A; 1.33W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.9A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 13.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
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MMBTA56-7-F MMBTA55Q_MMBTA56Q.pdf
MMBTA56-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Quantity in set/package: 3000pcs.
на замовлення 2051 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+9.88 грн
66+5.81 грн
100+3.85 грн
500+1.79 грн
1376+1.69 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
MMBTA56Q-7-F MMBTA55Q_MMBTA56Q.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Quantity in set/package: 3000pcs.
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SMCJ28A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ28A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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FZT953QTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8DB7BF3F8520CE&compId=FZT953.pdf?ci_sign=8f57b6558ce292302c3ba3435fdd65b77bc82c45
FZT953QTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Current gain: 15...200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Pulsed collector current: 10A
на замовлення 463 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.92 грн
10+48.93 грн
28+32.64 грн
76+30.81 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FZT953TA description pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9B8DB7BF3F8520CE&compId=FZT953.pdf?ci_sign=8f57b6558ce292302c3ba3435fdd65b77bc82c45
FZT953TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
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DMP2035U-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED89A9967C2CA18&compId=DMP2035U.pdf?ci_sign=cabb7bd9788d193bfd681e481be2f6257b4bb2ad
DMP2035U-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23; ESD
Case: SOT23
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.81W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
на замовлення 772 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.46 грн
25+15.82 грн
34+11.31 грн
100+8.33 грн
200+4.51 грн
549+4.28 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DMP2035UVT-7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797FA3ED50524A748&compId=DMP2035UVT.pdf?ci_sign=9f296fb25f5c4370bc860ca04444f942409f1a72
DMP2035UVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT26; ESD
Case: TSOT26
Drain-source voltage: -20V
Drain current: -4.8A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
на замовлення 4159 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.84 грн
16+24.31 грн
25+19.04 грн
100+14.14 грн
109+8.33 грн
299+7.87 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
US1K-13-F ds16008.pdf
US1K-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. forward voltage: 1.7V
на замовлення 2184 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.00 грн
40+9.71 грн
100+6.19 грн
262+3.44 грн
719+3.21 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DGD21814S14-13 DGD21814.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Supply voltage: 10...20V
Output current: -2.3...1.9A
Type of integrated circuit: driver
Impulse rise time: 60ns
Pulse fall time: 35ns
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
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DMN6075S-7 DMN6075S.pdf
DMN6075S-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: 60V
Drain current: 1.5A
On-state resistance: 0.12Ω
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 844 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.05 грн
25+15.44 грн
31+12.46 грн
51+7.57 грн
100+6.35 грн
184+4.82 грн
500+4.74 грн
506+4.59 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
RS1D-13-F ds15002.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 150ns
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RS1DB-13-F ds15002.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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B0540W-7-F B0540W.pdf
B0540W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Capacitance: 170pF
на замовлення 978 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.06 грн
63+6.12 грн
80+4.80 грн
100+4.27 грн
500+3.13 грн
511+1.76 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
DESD5V0S1BLD-7B DESD5V0S1BLD.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 12A; bidirectional; DFN1006-2; reel,tape
Case: DFN1006-2
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Breakdown voltage: 5.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Mounting: SMD
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BAS70-06Q-13-F BAS70-05Q-BAS70-06Q.pdf
BAS70-06Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
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BAS70-06Q-7-F BAS70-05Q-BAS70-06Q.pdf
BAS70-06Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 2pF
Reverse recovery time: 5ns
Leakage current: 0.1µA
Power dissipation: 0.2W
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AP3125BKTR-G1 AP3125B.pdf
AP3125BKTR-G1
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 350mA; 20÷70kHz; Ch: 1; SOT26; flyback
Operating temperature: -20...125°C
Case: SOT26
Supply voltage: 10...25V
Frequency: 20...70kHz
Output current: 0.35A
Type of integrated circuit: PMIC
Number of channels: 1
Application: SMPS
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Mounting: SMD
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SMBJ40CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ40CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
35+12.68 грн
45+8.94 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
BZT52HC9V1WF-7 BZT52HC2V4WF%20-%20BZT52HC47WF.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 9.1V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 9.1V
Power dissipation: 0.83W
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AP7375-33W5-7 AP7375.pdf
AP7375-33W5-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT25; SMD
Operating temperature: -40...85°C
Case: SOT25
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.35A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...45V
Kind of package: reel; tape
Manufacturer series: AP7375
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
на замовлення 2076 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+46.10 грн
15+25.76 грн
25+21.10 грн
88+10.32 грн
240+9.79 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
AP7375-33Y-13 AP7375.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.35A; SOT89; SMD
Operating temperature: -40...85°C
Case: SOT89
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.35A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...45V
Kind of package: reel; tape
Manufacturer series: AP7375
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
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BC846B-13-F
BC846B-13-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Quantity in set/package: 3000pcs.
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74HCT08S14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70D9D4B6540D3&compId=74HCT08.pdf?ci_sign=79ca381c05d927ddebac96128a7bedae1f32db24
74HCT08S14-13
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; HCT
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
на замовлення 913 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.22 грн
19+20.26 грн
25+16.44 грн
100+12.16 грн
134+6.80 грн
368+6.42 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
74HCT08T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70E4A25F5C0D3&compId=74HCT08.pdf?ci_sign=7b2221fed63b623caffb82245b5cf0c4171ea839
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HCT
Kind of input: with Schmitt trigger
Kind of output: push-pull
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74LVC2G06FX4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710E4871520D3&compId=74LVC2G06.pdf?ci_sign=68bdaccebfa147d4a75ccbc7a4b511ef384ed246
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1409-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
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74LVC2G06FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E710E4871620D3&compId=74LVC2G06.pdf?ci_sign=8cd6920e0f2d7f23b99ec4690f8a49c2f2e306f4
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
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74LVC2G06W6-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109CB27600D3&compId=74LVC2G06.pdf?ci_sign=ef87cd3347e87ebf9e0986e4b7e0fd60ac4f335d
74LVC2G06W6-7
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of output: open drain
Kind of package: reel; tape
Family: LVC
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DGD2110S16-13 DGD2110-2113.pdf
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO16; -2.5÷2.5A; Ch: 1
Mounting: SMD
Case: SO16
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-/low-side
Supply voltage: 3.3...20V
Output current: -2.5...2.5A
Type of integrated circuit: driver
Impulse rise time: 35ns
Pulse fall time: 25ns
Number of channels: 1
Kind of package: reel; tape
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FZT1049ATA FZT1049A.pdf
FZT1049ATA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 1.2W
Case: SOT223
Current gain: 300...1200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 801 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.34 грн
12+33.03 грн
25+29.13 грн
36+25.23 грн
98+23.85 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MMSZ5227B-7-F mmsz52xxb_Ser.pdf
MMSZ5227B-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.58 грн
99+3.90 грн
117+3.29 грн
173+2.22 грн
607+1.48 грн
1669+1.39 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMSZ5227BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5227BQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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DZT5401-13 DZT5401.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT223
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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DXT5401-13 ds31226.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 1W
Case: SOT89
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
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MMST5401-7-F MMST5401.pdf
MMST5401-7-F
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 200mA; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
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MMDT5401Q-7-F MMDT5401Q.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 150V; 0.2A; 320mW; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.32W
Case: SOT363
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
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MMST5401Q-7-F MMST5401.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.2A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Current gain: 50...240
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...300MHz
Application: automotive industry
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AP7366-33W5-7 AP7366.pdf
AP7366-33W5-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT25; SMD
Manufacturer series: AP7366
Kind of package: reel; tape
Case: SOT25
Tolerance: ±1%
Output voltage: 3.3V
Output current: 0.6A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.2...6V
Integrated circuit features: shutdown mode control input
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 1334 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+32.11 грн
19+20.95 грн
24+16.05 грн
100+7.11 грн
162+5.50 грн
444+5.20 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
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