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BZT52C9V1T-7 BZT52C9V1T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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BZT52C9V1-13-F BZT52C9V1-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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BZT52C9V1LP-7 DIODES INCORPORATED DS_31_BZT52C2V4LP-BZT52C39LP.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 9.1V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C9V1Q-7-F BZT52C9V1Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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DMN1001UCA10-7 DIODES INCORPORATED DMN1001UCA10.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 16A
Pulsed drain current: 90A
Case: X2-TSN1820-10
Gate-source voltage: ±8V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Power dissipation: 2.4W
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DMN1004UFDF-7 DIODES INCORPORATED DMN1004UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 12A
Pulsed drain current: 70A
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Power dissipation: 2.1W
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DMN1006UCA6-7 DIODES INCORPORATED DMN1006UCA6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 13.2A
Pulsed drain current: 80A
Case: X3-DSN2718-6
Gate-source voltage: ±12V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 35.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Power dissipation: 2.4W
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DMN1008UFDF-13 DIODES INCORPORATED DMN1008UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Power dissipation: 1W
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DMN1008UFDF-7 DIODES INCORPORATED DMN1008UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Power dissipation: 1W
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DMN1008UFDFQ-13 DIODES INCORPORATED DMN1008UFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Power dissipation: 1W
Application: automotive industry
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ZSR1000GTA ZSR1000GTA DIODES INCORPORATED ZSR.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 10V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 10V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 12...20V
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DMP3018SFV-7 DIODES INCORPORATED DMP3018SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -70A
Power dissipation: 1.9W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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FZT857TA FZT857TA DIODES INCORPORATED FZT857.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 3.5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 3.5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
5+86.65 грн
10+54.49 грн
32+28.81 грн
87+27.20 грн
Мінімальне замовлення: 5
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FZT857QTA FZT857QTA DIODES INCORPORATED FZT857Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 3.5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 3.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
на замовлення 936 шт:
термін постачання 21-30 дні (днів)
5+101.51 грн
10+60.39 грн
29+31.42 грн
80+29.73 грн
Мінімальне замовлення: 5
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FZT957TA FZT957TA DIODES INCORPORATED FZT957_FZT958_Jan1996.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 1A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 1A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 85MHz
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
5+85.00 грн
10+53.72 грн
27+34.56 грн
Мінімальне замовлення: 5
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DMC3401LDW-7 DIODES INCORPORATED DMC3401LDW.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
3000+4.46 грн
Мінімальне замовлення: 3000
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74AHCT04S14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E2E0D3&compId=74AHCT04.pdf?ci_sign=43a8565fa61cbe99c83ebef35db1c07a9957a5b4 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO14
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Number of channels: 6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: inverter
Family: AHCT
Mounting: SMD
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74AHCT04T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E3E0D3&compId=74AHCT04.pdf?ci_sign=0e24153ef9bf53f04a7a698e97f691b9fe46b158 Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: TSSOP14
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Number of channels: 6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: inverter
Family: AHCT
Mounting: SMD
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74AHC86T14-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E0E0D3&compId=74AHC86.pdf?ci_sign=fc6955a127f689e8318d943d3bc768e9306ad43c Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Technology: CMOS
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DMP3028LSD-13 DMP3028LSD-13 DIODES INCORPORATED DMP3028LSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3028LK3-13 DIODES INCORPORATED DMP3028LK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -22A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3028LFDE-7 DIODES INCORPORATED DMP3028LFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.6A
Pulsed drain current: -40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3028LFDE-13 DIODES INCORPORATED DMP3028LFDE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.6A
Pulsed drain current: -40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3028LK3Q-13 DIODES INCORPORATED DMP3028LK3Q.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.6A; Idm: -40A; 1.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.6A
Pulsed drain current: -40A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP3028LPSQ-13 DIODES INCORPORATED DMP3028LPSQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Pulsed drain current: -70A
Power dissipation: 2.12W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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AP2120N-2.5TRG1 AP2120N-2.5TRG1 DIODES INCORPORATED AP2120.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Output voltage: 2.5V
Output current: 0.15A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
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AP2120N-1.3TRG1 AP2120N-1.3TRG1 DIODES INCORPORATED AP2120.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 1.3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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AP2120N-1.5TRG1 AP2120N-1.5TRG1 DIODES INCORPORATED AP2120.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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ZXMP6A18KTC ZXMP6A18KTC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2E501A9AD98BF&compId=ZXMP6A18K.pdf?ci_sign=9ce587467aac6cf0c48ed137b5a8436941ac98ce Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10.4A; 4.3W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 4.3W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain current: -10.4A
On-state resistance: 55mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -60V
на замовлення 2299 шт:
термін постачання 21-30 дні (днів)
6+78.40 грн
10+54.56 грн
34+27.43 грн
91+25.90 грн
Мінімальне замовлення: 6
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SDA004-7 SDA004-7 DIODES INCORPORATED SDA004.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 0.2W; double series x2; SOT363; Ch: 2; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2W
Capacitance: 3pF
Max. off-state voltage: 80V
Semiconductor structure: double series x2
Reverse recovery time: 4ns
Number of channels: 2
на замовлення 130 шт:
термін постачання 21-30 дні (днів)
18+23.93 грн
27+14.64 грн
35+11.04 грн
100+7.20 грн
Мінімальне замовлення: 18
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DMTH6010SCT DIODES INCORPORATED DMTH6010SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 160A; 125W; TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 7.2mΩ
Drain current: 100A
Drain-source voltage: 60V
Case: TO220-3
Gate charge: 36.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Type of transistor: N-MOSFET
Power dissipation: 125W
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DMTH6010SK3-13 DIODES INCORPORATED DMTH6010SK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.6A; Idm: 280A; 3.1W; TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: 13.6A
Drain-source voltage: 60V
Case: TO252
Gate charge: 38.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 280A
Type of transistor: N-MOSFET
Power dissipation: 3.1W
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DMTH6010SK3Q-13 DIODES INCORPORATED DMTH6010SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.6A; Idm: 280A; 3.1W; TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: 13.6A
Drain-source voltage: 60V
Case: TO252
Gate charge: 38.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 280A
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.1W
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DMTH6010SPS-13 DIODES INCORPORATED DMTH6010SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: 10.4A
Drain-source voltage: 60V
Case: PowerDI5060-8
Gate charge: 38.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Type of transistor: N-MOSFET
Power dissipation: 2.6W
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APX803L05-31SA-7 APX803L05-31SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 3.08V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
на замовлення 1456 шт:
термін постачання 21-30 дні (днів)
11+40.44 грн
18+22.53 грн
25+18.32 грн
100+13.64 грн
135+6.67 грн
371+6.36 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
APX803L05-12SA-7 APX803L05-12SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 1.2V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-29SA-7 APX803L05-29SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 2.93V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-30SA-7 APX803L05-30SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 3V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-46SA-7 APX803L05-46SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 4.63V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-20SA-7 APX803L05-20SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 2V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-26SA-7 APX803L05-26SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 2.63V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-28SA-7 APX803L05-28SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 2.8V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-39SA-7 APX803L05-39SA-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793 Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 3.9V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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FMMT591AQTA DIODES INCORPORATED FMMT591A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 30...800
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Pulsed collector current: 2A
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FMMT591QTA FMMT591QTA DIODES INCORPORATED FMMT591Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
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ES1C-13-F ES1C-13-F DIODES INCORPORATED ds14001.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 25ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Max. off-state voltage: 150V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Case: SMA
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ZTX792A DIODES INCORPORATED ZTX792A.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 70V; 2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
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ZTX792ASTZ DIODES INCORPORATED ZTX792A.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 70V; 2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 100MHz
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PI49FCT3807AHE PI49FCT3807AHE DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985AE82B9D99618BF&compId=PI49FCT3807.pdf?ci_sign=5bfeec81c4cd74891d41876837e86198bce53c3e Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Number of channels: 1
Supply voltage: 3.3V DC
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Kind of package: tube
Frequency: 66MHz
Number of inputs/outputs: 1/10
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PI49FCT32805QE DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE985992D71686D38BF&compId=PI49FCT32805.pdf?ci_sign=64009f9b603f7a087a0765e1735d2b2069ce1e47 Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 2; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Number of channels: 2
Supply voltage: 3.3V DC
Mounting: SMD
Case: QSOP20
Operating temperature: -40...85°C
Kind of package: tube
Frequency: 133MHz
Number of inputs/outputs: 1/5
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SMBJ13A-13-F SMBJ13A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14.4÷16.5V; 27.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 5940 шт:
термін постачання 21-30 дні (днів)
20+20.63 грн
27+14.64 грн
35+11.19 грн
100+6.97 грн
156+5.82 грн
428+5.52 грн
500+5.29 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BZT52C9V1T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C9V1T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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BZT52C9V1-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C9V1-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
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BZT52C9V1LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 9.1V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C9V1Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C9V1Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 9.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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DMN1001UCA10-7 DMN1001UCA10.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 16A
Pulsed drain current: 90A
Case: X2-TSN1820-10
Gate-source voltage: ±8V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Power dissipation: 2.4W
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DMN1004UFDF-7 DMN1004UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 12A
Pulsed drain current: 70A
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Power dissipation: 2.1W
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DMN1006UCA6-7 DMN1006UCA6.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 13.2A
Pulsed drain current: 80A
Case: X3-DSN2718-6
Gate-source voltage: ±12V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 35.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Power dissipation: 2.4W
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DMN1008UFDF-13 DMN1008UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Power dissipation: 1W
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DMN1008UFDF-7 DMN1008UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Power dissipation: 1W
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DMN1008UFDFQ-13 DMN1008UFDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.8A
Pulsed drain current: 60A
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 23.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Power dissipation: 1W
Application: automotive industry
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ZSR1000GTA ZSR.pdf
ZSR1000GTA
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 10V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 10V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 12...20V
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DMP3018SFV-7 DMP3018SFV.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -70A; 1.9W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -70A
Power dissipation: 1.9W
Case: PowerDI3333-8
Gate-source voltage: ±25V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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FZT857TA FZT857.pdf
FZT857TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 3.5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 3.5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+86.65 грн
10+54.49 грн
32+28.81 грн
87+27.20 грн
Мінімальне замовлення: 5
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FZT857QTA FZT857Q.pdf
FZT857QTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 3.5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 3.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
на замовлення 936 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+101.51 грн
10+60.39 грн
29+31.42 грн
80+29.73 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FZT957TA FZT957_FZT958_Jan1996.pdf
FZT957TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 1A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 1A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 85MHz
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+85.00 грн
10+53.72 грн
27+34.56 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMC3401LDW-7 DMC3401LDW.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+4.46 грн
Мінімальне замовлення: 3000
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74AHCT04S14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E2E0D3&compId=74AHCT04.pdf?ci_sign=43a8565fa61cbe99c83ebef35db1c07a9957a5b4
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: SO14
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Number of channels: 6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: inverter
Family: AHCT
Mounting: SMD
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74AHCT04T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E3E0D3&compId=74AHCT04.pdf?ci_sign=0e24153ef9bf53f04a7a698e97f691b9fe46b158
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Operating temperature: -40...150°C
Case: TSSOP14
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Number of channels: 6
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Technology: CMOS; TTL
Kind of integrated circuit: inverter
Family: AHCT
Mounting: SMD
товару немає в наявності
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74AHC86T14-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70BF021E0E0D3&compId=74AHC86.pdf?ci_sign=fc6955a127f689e8318d943d3bc768e9306ad43c
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Family: AHC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...150°C
Technology: CMOS
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DMP3028LSD-13 DMP3028LSD.pdf
DMP3028LSD-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.8A
Pulsed drain current: -30A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3028LK3-13 DMP3028LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -22A
Pulsed drain current: -40A
Power dissipation: 1.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3028LFDE-7 DMP3028LFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.6A
Pulsed drain current: -40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP3028LFDE-13 DMP3028LFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.6A
Pulsed drain current: -40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP3028LK3Q-13 DMP3028LK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.6A; Idm: -40A; 1.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.6A
Pulsed drain current: -40A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMP3028LPSQ-13 DMP3028LPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Pulsed drain current: -70A
Power dissipation: 2.12W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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AP2120N-2.5TRG1 AP2120.pdf
AP2120N-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Operating temperature: -40...85°C
Manufacturer series: AP2120
Output voltage: 2.5V
Output current: 0.15A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
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AP2120N-1.3TRG1 AP2120.pdf
AP2120N-1.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 1.3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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AP2120N-1.5TRG1 AP2120.pdf
AP2120N-1.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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ZXMP6A18KTC pVersion=0046&contRep=ZT&docId=005056AB82531EE986E2E501A9AD98BF&compId=ZXMP6A18K.pdf?ci_sign=9ce587467aac6cf0c48ed137b5a8436941ac98ce
ZXMP6A18KTC
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10.4A; 4.3W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 4.3W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain current: -10.4A
On-state resistance: 55mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -60V
на замовлення 2299 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+78.40 грн
10+54.56 грн
34+27.43 грн
91+25.90 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SDA004-7 SDA004.pdf
SDA004-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 0.2W; double series x2; SOT363; Ch: 2; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2W
Capacitance: 3pF
Max. off-state voltage: 80V
Semiconductor structure: double series x2
Reverse recovery time: 4ns
Number of channels: 2
на замовлення 130 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.93 грн
27+14.64 грн
35+11.04 грн
100+7.20 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DMTH6010SCT DMTH6010SCT.pdf
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 160A; 125W; TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 7.2mΩ
Drain current: 100A
Drain-source voltage: 60V
Case: TO220-3
Gate charge: 36.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 160A
Type of transistor: N-MOSFET
Power dissipation: 125W
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DMTH6010SK3-13 DMTH6010SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.6A; Idm: 280A; 3.1W; TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: 13.6A
Drain-source voltage: 60V
Case: TO252
Gate charge: 38.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 280A
Type of transistor: N-MOSFET
Power dissipation: 3.1W
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DMTH6010SK3Q-13 DMTH6010SK3Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13.6A; Idm: 280A; 3.1W; TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: 13.6A
Drain-source voltage: 60V
Case: TO252
Gate charge: 38.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 280A
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.1W
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DMTH6010SPS-13 DMTH6010SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: 10.4A
Drain-source voltage: 60V
Case: PowerDI5060-8
Gate charge: 38.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Type of transistor: N-MOSFET
Power dissipation: 2.6W
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APX803L05-31SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L05-31SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 3.08V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
на замовлення 1456 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.44 грн
18+22.53 грн
25+18.32 грн
100+13.64 грн
135+6.67 грн
371+6.36 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
APX803L05-12SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L05-12SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 1.2V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-29SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L05-29SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 2.93V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-30SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L05-30SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 3V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-46SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L05-46SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 4.63V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-20SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L05-20SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 2V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-26SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L05-26SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 2.63V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-28SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L05-28SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 2.8V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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APX803L05-39SA-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5EE2B7AAEDCA0D2&compId=APX803L.pdf?ci_sign=e4a052770234574778d7f4331510a354344c4793
APX803L05-39SA-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 55ms
Maximum output current: 20mA
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1,5% accuracy
Threshold on-voltage: 3.9V
Supply voltage: 0.9...5.5V DC
DC supply current: 1µA
Kind of integrated circuit: power on reset monitor (PoR)
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FMMT591AQTA FMMT591A.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 30...800
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Pulsed collector current: 2A
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FMMT591QTA FMMT591Q.pdf
FMMT591QTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
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ES1C-13-F ds14001.pdf
ES1C-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 25ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Max. off-state voltage: 150V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Case: SMA
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ZTX792A ZTX792A.pdf
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 70V; 2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 100MHz
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ZTX792ASTZ ZTX792A.pdf
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 70V; 2A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 100MHz
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PI49FCT3807AHE pVersion=0046&contRep=ZT&docId=005056AB82531EE985AE82B9D99618BF&compId=PI49FCT3807.pdf?ci_sign=5bfeec81c4cd74891d41876837e86198bce53c3e
PI49FCT3807AHE
Виробник: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 1; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Number of channels: 1
Supply voltage: 3.3V DC
Mounting: SMD
Case: SSOP20
Operating temperature: -40...85°C
Kind of package: tube
Frequency: 66MHz
Number of inputs/outputs: 1/10
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PI49FCT32805QE pVersion=0046&contRep=ZT&docId=005056AB82531EE985992D71686D38BF&compId=PI49FCT32805.pdf?ci_sign=64009f9b603f7a087a0765e1735d2b2069ce1e47
Виробник: DIODES INCORPORATED
Category: Other logic integrated circuits
Description: IC: peripheral circuit; clock buffer,fanout buffer; Ch: 2; 3.3VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: clock buffer; fanout buffer
Number of channels: 2
Supply voltage: 3.3V DC
Mounting: SMD
Case: QSOP20
Operating temperature: -40...85°C
Kind of package: tube
Frequency: 133MHz
Number of inputs/outputs: 1/5
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SMBJ13A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ13A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 14.4÷16.5V; 27.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 27.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 5940 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+20.63 грн
27+14.64 грн
35+11.19 грн
100+6.97 грн
156+5.82 грн
428+5.52 грн
500+5.29 грн
Мінімальне замовлення: 20
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