Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73838) > Сторінка 227 з 1231
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMC2038LVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 3.7A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Part Status: Not For New Designs |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMG4511SK4-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 35V 5.3A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMN2990UDJ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 0.45A SOT963Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 6330000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMN3110S-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 2.5A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V |
на замовлення 726000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMN4031SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 5.2A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
|
DMN4800LSSL-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 8A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V Power Dissipation (Max): 1.46W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMC3021LK4-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 9.4A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
на замовлення 67500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMG1026UV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.41A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 580mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 969000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMG2307L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.5A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V |
на замовлення 674000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMG4822SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMG6602SVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.4A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Not For New Designs |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMS3016SSSA-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 9.8A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
DMN3110S-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 2.5A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V |
на замовлення 726619 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMG2307L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.5A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V |
на замовлення 674279 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BC847BLP-7B | Diodes Incorporated |
Description: TRANS NPN 45V 0.1A X1-DFN1006-3Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
на замовлення 670120 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMG4822SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 8855 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMS3016SSSA-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 9.8A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
DMG6602SVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.4A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Not For New Designs |
на замовлення 34734 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BSN20-7 | Diodes Incorporated |
Description: MOSFET N-CH 50V 500MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 56097 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMN2990UDJ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 0.45A SOT963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 6333460 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMN4031SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 5.2A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMG4511SK4-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 35V 5.3A TO252-4LPackaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
на замовлення 14861 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMN4800LSSL-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 8A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V Power Dissipation (Max): 1.46W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V |
на замовлення 5005 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BC857BLP-7B | Diodes Incorporated |
Description: TRANS PNP 45V 0.1A X1-DFN1006-3Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
на замовлення 276685 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMC2038LVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 3.7A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Part Status: Not For New Designs |
на замовлення 35251 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMC3021LK4-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 9.4A TO252-4LPackaging: Cut Tape (CT) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
на замовлення 67506 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMG1026UV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.41A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 580mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 969853 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
PD10GE159 | Diodes Incorporated |
Description: XTAL OSC XO 159.3750MHZ PECL SMD |
на замовлення 999 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
PD10GE156 | Diodes Incorporated |
Description: XTAL OSC XO 156.2500MHZ PECL SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
PDGPON155 | Diodes Incorporated |
Description: XTAL OSC XO 155.5200MHZ PECL SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: PECL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 3.3V Current - Supply (Max): 80mA Supplier Device Package: 4-VDFN (3.2x2.5) Height - Seated (Max): 0.053" (1.35mm) Part Status: Active Frequency: 155.52 MHz Base Resonator: Crystal |
на замовлення 489 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMC2700UDM-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 1.34A SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.12W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active |
на замовлення 4755000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMC2700UDM-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 1.34A SOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.12W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active |
на замовлення 4755043 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
AL8807W5-7 | Diodes Incorporated |
Description: IC LED DRIVER RGLTR PWM 1A SOT25 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TJ) Current - Output / Channel: 1A (Switch) Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: SOT-25 Dimming: Analog, PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 36V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
AP2337SA-7 | Diodes Incorporated |
Description: IC HOT SWAP CTRLR GP SOT23-3Packaging: Tape & Reel (TR) Features: OVP, Thermal Limit, UVLO Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Hot Swap Controller Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Internal Switch(s): Yes Current - Output (Max): 1A Supplier Device Package: SOT-23-3 Number of Channels: 1 Current - Supply: 65 µA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
AP6502SP-13 | Diodes Incorporated |
Description: IC REG BUCK ADJ 2A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 340kHz Voltage - Input (Max): 18V Topology: Buck Supplier Device Package: 8-SO-EP Synchronous Rectifier: Yes Voltage - Output (Max): 16V Voltage - Input (Min): 4.7V Voltage - Output (Min/Fixed): 0.925V Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
AP6503SP-13 | Diodes Incorporated |
Description: IC REG BUCK ADJ 3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 340kHz Voltage - Input (Max): 23V Topology: Buck Supplier Device Package: 8-SO-EP Synchronous Rectifier: Yes Voltage - Output (Max): 20V Voltage - Input (Min): 4.7V Voltage - Output (Min/Fixed): 0.925V Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
DESD1P0RFW-7 | Diodes Incorporated |
Description: TVS DIODE 70VWM 8VC SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 15A (8/20µs) Voltage - Reverse Standoff (Typ): 70V (Max) Supplier Device Package: SOT-323 Unidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 8V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
DESD1P0RFWQ-7 | Diodes Incorporated |
Description: TVS DIODE 70VWM 8VC SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 15A (8/20µs) Voltage - Reverse Standoff (Typ): 70V (Max) Supplier Device Package: SOT-323 Unidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 8V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DMC2990UDJ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.45A SOT963Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMG1029SV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 0.5A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 313480 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
AH1804-W-7 | Diodes Incorporated |
Description: MAGNETIC SWITCH OMNIPOLAR SC59 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DMN2075UDW-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 2.8A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
AH1804-W-7 | Diodes Incorporated |
Description: MAGNETIC SWITCH OMNIPOLAR SC59 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
AH1883-FJG-7 | Diodes Incorporated |
Description: MAGNETIC SWITCH OMNIPOLAR 3-UDFNPackaging: Cut Tape (CT) |
на замовлення 259 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMN3029LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A PWRDI333-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DMN3029LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A PWRDI333-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
AL8807W5-7 | Diodes Incorporated |
Description: IC LED DRIVER RGLTR PWM 1A SOT25 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TJ) Current - Output / Channel: 1A (Switch) Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: SOT-25 Dimming: Analog, PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 36V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
DMN3029LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A PWRDI333-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
AP2337SA-7 | Diodes Incorporated |
Description: IC HOT SWAP CTRLR GP SOT23-3Packaging: Cut Tape (CT) Features: OVP, Thermal Limit, UVLO Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Hot Swap Controller Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Internal Switch(s): Yes Current - Output (Max): 1A Supplier Device Package: SOT-23-3 Number of Channels: 1 Current - Supply: 65 µA |
на замовлення 9540 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
AP6502SP-13 | Diodes Incorporated |
Description: IC REG BUCK ADJ 2A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 340kHz Voltage - Input (Max): 18V Topology: Buck Supplier Device Package: 8-SO-EP Synchronous Rectifier: Yes Voltage - Output (Max): 16V Voltage - Input (Min): 4.7V Voltage - Output (Min/Fixed): 0.925V Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
AP6503SP-13 | Diodes Incorporated |
Description: IC REG BUCK ADJ 3A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 340kHz Voltage - Input (Max): 23V Topology: Buck Supplier Device Package: 8-SO-EP Synchronous Rectifier: Yes Voltage - Output (Max): 20V Voltage - Input (Min): 4.7V Voltage - Output (Min/Fixed): 0.925V Part Status: Last Time Buy |
на замовлення 1806 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMC2990UDJ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.45A SOT963Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 104851 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMG1029SV-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 0.5A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 450mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 313611 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMN2075UDW-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 2.8A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V |
на замовлення 11950 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMP3105LVT-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.1A TSOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V Power Dissipation (Max): 1.15W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DSR6U600P5-13 | Diodes Incorporated |
Description: DIODE GEN PURP 600V 6A POWERDI5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBR30A45CTB | Diodes Incorporated |
Description: DIODE ARR SBR 45V 15A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBR40U200CTB | Diodes Incorporated |
Description: DIODE ARR SBR 200V 20A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 200 V |
на замовлення 2750 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMN62D0SFD-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 540MA 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: X1-DFN1212-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V |
на замовлення 201000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMP2018LFK-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 9.2A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: U-DFN2523-6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
|
| DMC2038LVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 3.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
Description: MOSFET N/P-CH 20V 3.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.91 грн |
| 6000+ | 6.03 грн |
| 9000+ | 5.72 грн |
| 15000+ | 5.03 грн |
| 21000+ | 4.83 грн |
| 30000+ | 4.64 грн |
| DMG4511SK4-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 35V 5.3A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 35V 5.3A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 22.39 грн |
| 5000+ | 21.12 грн |
| 7500+ | 20.62 грн |
| 12500+ | 18.76 грн |
| DMN2990UDJ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.45A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
Description: MOSFET 2N-CH 20V 0.45A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 6330000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.66 грн |
| 20000+ | 7.29 грн |
| 30000+ | 7.26 грн |
| 50000+ | 6.63 грн |
| DMN3110S-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
на замовлення 726000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.33 грн |
| 6000+ | 12.67 грн |
| 9000+ | 12.10 грн |
| 15000+ | 10.75 грн |
| 21000+ | 10.47 грн |
| DMN4031SSD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMN4800LSSL-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Power Dissipation (Max): 1.46W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
Description: MOSFET N-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Power Dissipation (Max): 1.46W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 14.03 грн |
| 5000+ | 12.35 грн |
| DMC3021LK4-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 9.4A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 30V 9.4A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
на замовлення 67500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 15.90 грн |
| 5000+ | 13.82 грн |
| 7500+ | 13.22 грн |
| 12500+ | 11.71 грн |
| 17500+ | 11.32 грн |
| DMG1026UV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 969000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.68 грн |
| 6000+ | 7.61 грн |
| 9000+ | 7.22 грн |
| 15000+ | 6.38 грн |
| 21000+ | 6.14 грн |
| 30000+ | 5.91 грн |
| 75000+ | 5.58 грн |
| DMG2307L-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
на замовлення 674000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.72 грн |
| 6000+ | 6.33 грн |
| 9000+ | 5.61 грн |
| 30000+ | 5.19 грн |
| 75000+ | 4.41 грн |
| 150000+ | 4.24 грн |
| DMG4822SSD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 18.68 грн |
| 5000+ | 17.04 грн |
| DMG6602SVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.26 грн |
| 6000+ | 5.46 грн |
| 9000+ | 5.17 грн |
| 15000+ | 4.54 грн |
| 21000+ | 4.36 грн |
| 30000+ | 4.19 грн |
| DMS3016SSSA-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 9.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Description: MOSFET N-CH 30V 9.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMN3110S-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
на замовлення 726619 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.17 грн |
| 10+ | 37.07 грн |
| 100+ | 23.98 грн |
| 500+ | 17.22 грн |
| 1000+ | 15.51 грн |
| DMG2307L-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
на замовлення 674279 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.66 грн |
| 16+ | 20.83 грн |
| 100+ | 10.49 грн |
| 500+ | 8.72 грн |
| 1000+ | 6.79 грн |
| BC847BLP-7B |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 45V 0.1A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS NPN 45V 0.1A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 670120 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.62 грн |
| 15+ | 21.98 грн |
| 100+ | 13.94 грн |
| 500+ | 9.83 грн |
| 1000+ | 8.78 грн |
| 2000+ | 7.89 грн |
| 5000+ | 6.82 грн |
| DMG4822SSD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 8855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.39 грн |
| 10+ | 41.00 грн |
| 100+ | 28.40 грн |
| 500+ | 22.27 грн |
| 1000+ | 18.95 грн |
| DMS3016SSSA-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Description: MOSFET N-CH 30V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMG6602SVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
на замовлення 34734 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 19+ | 17.63 грн |
| 100+ | 11.14 грн |
| 500+ | 7.79 грн |
| 1000+ | 6.93 грн |
| BSN20-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 56097 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.29 грн |
| 26+ | 12.96 грн |
| 100+ | 8.10 грн |
| 500+ | 5.61 грн |
| 1000+ | 4.97 грн |
| DMN2990UDJ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.45A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
Description: MOSFET 2N-CH 20V 0.45A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 6333460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.28 грн |
| 13+ | 26.41 грн |
| 100+ | 12.33 грн |
| 500+ | 10.16 грн |
| 1000+ | 9.16 грн |
| 2000+ | 8.33 грн |
| 5000+ | 7.39 грн |
| DMN4031SSD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.65 грн |
| 10+ | 44.45 грн |
| 100+ | 33.15 грн |
| 500+ | 24.45 грн |
| 1000+ | 18.89 грн |
| DMG4511SK4-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 35V 5.3A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 35V 5.3A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
на замовлення 14861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.68 грн |
| 10+ | 56.67 грн |
| 100+ | 35.76 грн |
| 500+ | 26.18 грн |
| 1000+ | 23.78 грн |
| DMN4800LSSL-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Power Dissipation (Max): 1.46W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
Description: MOSFET N-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Power Dissipation (Max): 1.46W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
на замовлення 5005 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.76 грн |
| 10+ | 34.93 грн |
| 100+ | 22.49 грн |
| 500+ | 16.06 грн |
| 1000+ | 14.44 грн |
| BC857BLP-7B |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 45V 0.1A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 276685 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.55 грн |
| 23+ | 14.84 грн |
| 100+ | 9.35 грн |
| 500+ | 6.51 грн |
| 1000+ | 5.77 грн |
| 2000+ | 5.15 грн |
| 5000+ | 4.41 грн |
| DMC2038LVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 3.7A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
Description: MOSFET N/P-CH 20V 3.7A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
на замовлення 35251 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.36 грн |
| 17+ | 19.35 грн |
| 100+ | 12.22 грн |
| 500+ | 8.57 грн |
| 1000+ | 7.63 грн |
| DMC3021LK4-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 9.4A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 30V 9.4A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
на замовлення 67506 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.02 грн |
| DMG1026UV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 969853 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.03 грн |
| 14+ | 23.70 грн |
| 100+ | 15.09 грн |
| 500+ | 10.66 грн |
| 1000+ | 9.53 грн |
| PD10GE159 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 159.3750MHZ PECL SMD
Description: XTAL OSC XO 159.3750MHZ PECL SMD
на замовлення 999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 413.88 грн |
| 10+ | 377.31 грн |
| 50+ | 356.32 грн |
| 100+ | 314.73 грн |
| PD10GE156 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 156.2500MHZ PECL SMD
Description: XTAL OSC XO 156.2500MHZ PECL SMD
товару немає в наявності
В кошику
од. на суму грн.
| PDGPON155 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 155.5200MHZ PECL SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: PECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 80mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.053" (1.35mm)
Part Status: Active
Frequency: 155.52 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 155.5200MHZ PECL SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: PECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 80mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.053" (1.35mm)
Part Status: Active
Frequency: 155.52 MHz
Base Resonator: Crystal
на замовлення 489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 372.15 грн |
| 10+ | 311.70 грн |
| 25+ | 294.76 грн |
| 50+ | 265.19 грн |
| 100+ | 254.24 грн |
| 250+ | 240.45 грн |
| DMC2700UDM-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
на замовлення 4755000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.60 грн |
| 6000+ | 4.00 грн |
| 9000+ | 3.77 грн |
| 15000+ | 3.31 грн |
| 21000+ | 3.17 грн |
| 30000+ | 3.04 грн |
| DMC2700UDM-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Description: MOSFET N/P-CH 20V 1.34A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.34A, 1.14A
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
на замовлення 4755043 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.55 грн |
| 22+ | 15.01 грн |
| 100+ | 9.45 грн |
| 500+ | 6.57 грн |
| 1000+ | 5.83 грн |
| AL8807W5-7 |
Виробник: Diodes Incorporated
Description: IC LED DRIVER RGLTR PWM 1A SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output / Channel: 1A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SOT-25
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 36V
Part Status: Obsolete
Description: IC LED DRIVER RGLTR PWM 1A SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output / Channel: 1A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SOT-25
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 36V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| AP2337SA-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC HOT SWAP CTRLR GP SOT23-3
Packaging: Tape & Reel (TR)
Features: OVP, Thermal Limit, UVLO
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1A
Supplier Device Package: SOT-23-3
Number of Channels: 1
Current - Supply: 65 µA
Description: IC HOT SWAP CTRLR GP SOT23-3
Packaging: Tape & Reel (TR)
Features: OVP, Thermal Limit, UVLO
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1A
Supplier Device Package: SOT-23-3
Number of Channels: 1
Current - Supply: 65 µA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.98 грн |
| 6000+ | 7.82 грн |
| AP6502SP-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG BUCK ADJ 2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 340kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.7V
Voltage - Output (Min/Fixed): 0.925V
Part Status: Last Time Buy
Description: IC REG BUCK ADJ 2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 340kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.7V
Voltage - Output (Min/Fixed): 0.925V
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| AP6503SP-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG BUCK ADJ 3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 340kHz
Voltage - Input (Max): 23V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 4.7V
Voltage - Output (Min/Fixed): 0.925V
Part Status: Last Time Buy
Description: IC REG BUCK ADJ 3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 340kHz
Voltage - Input (Max): 23V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 4.7V
Voltage - Output (Min/Fixed): 0.925V
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| DESD1P0RFW-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 70VWM 8VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: SOT-323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Description: TVS DIODE 70VWM 8VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: SOT-323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DESD1P0RFWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 70VWM 8VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: SOT-323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 70VWM 8VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: SOT-323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMC2990UDJ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.45A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
Description: MOSFET N/P-CH 20V 0.45A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.64 грн |
| 20000+ | 6.79 грн |
| 30000+ | 6.50 грн |
| 50000+ | 5.89 грн |
| DMG1029SV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 60V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 60V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 313480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.47 грн |
| 6000+ | 6.55 грн |
| 9000+ | 6.22 грн |
| 15000+ | 5.57 грн |
| AH1804-W-7 |
![]() |
Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SC59
Description: MAGNETIC SWITCH OMNIPOLAR SC59
товару немає в наявності
В кошику
од. на суму грн.
| DMN2075UDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Description: MOSFET N-CH 20V 2.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.10 грн |
| 6000+ | 8.86 грн |
| 9000+ | 8.42 грн |
| AH1804-W-7 |
![]() |
Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SC59
Description: MAGNETIC SWITCH OMNIPOLAR SC59
товару немає в наявності
В кошику
од. на суму грн.
| AH1883-FJG-7 |
![]() |
на замовлення 259 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 56.21 грн |
| 10+ | 41.25 грн |
| 25+ | 35.56 грн |
| 50+ | 32.17 грн |
| 100+ | 27.41 грн |
| DMN3029LFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI333-8
Description: MOSFET N-CH 30V 5.3A PWRDI333-8
товару немає в наявності
В кошику
од. на суму грн.
| DMN3029LFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI333-8
Description: MOSFET N-CH 30V 5.3A PWRDI333-8
товару немає в наявності
В кошику
од. на суму грн.
| AL8807W5-7 |
Виробник: Diodes Incorporated
Description: IC LED DRIVER RGLTR PWM 1A SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output / Channel: 1A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SOT-25
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 36V
Part Status: Obsolete
Description: IC LED DRIVER RGLTR PWM 1A SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output / Channel: 1A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: SOT-25
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 36V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| DMN3029LFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI333-8
Description: MOSFET N-CH 30V 5.3A PWRDI333-8
товару немає в наявності
В кошику
од. на суму грн.
| AP2337SA-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC HOT SWAP CTRLR GP SOT23-3
Packaging: Cut Tape (CT)
Features: OVP, Thermal Limit, UVLO
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1A
Supplier Device Package: SOT-23-3
Number of Channels: 1
Current - Supply: 65 µA
Description: IC HOT SWAP CTRLR GP SOT23-3
Packaging: Cut Tape (CT)
Features: OVP, Thermal Limit, UVLO
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1A
Supplier Device Package: SOT-23-3
Number of Channels: 1
Current - Supply: 65 µA
на замовлення 9540 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.13 грн |
| 13+ | 25.50 грн |
| 25+ | 20.93 грн |
| 100+ | 14.77 грн |
| 250+ | 12.38 грн |
| 500+ | 10.91 грн |
| 1000+ | 9.52 грн |
| AP6502SP-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG BUCK ADJ 2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 340kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.7V
Voltage - Output (Min/Fixed): 0.925V
Part Status: Last Time Buy
Description: IC REG BUCK ADJ 2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 340kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.7V
Voltage - Output (Min/Fixed): 0.925V
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| AP6503SP-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG BUCK ADJ 3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 340kHz
Voltage - Input (Max): 23V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 4.7V
Voltage - Output (Min/Fixed): 0.925V
Part Status: Last Time Buy
Description: IC REG BUCK ADJ 3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 340kHz
Voltage - Input (Max): 23V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 20V
Voltage - Input (Min): 4.7V
Voltage - Output (Min/Fixed): 0.925V
Part Status: Last Time Buy
на замовлення 1806 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 177.98 грн |
| 10+ | 107.43 грн |
| 25+ | 90.57 грн |
| 100+ | 67.14 грн |
| 250+ | 58.38 грн |
| 500+ | 52.99 грн |
| 1000+ | 47.68 грн |
| DMC2990UDJ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.45A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
Description: MOSFET N/P-CH 20V 0.45A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 104851 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.88 грн |
| 14+ | 24.36 грн |
| 100+ | 15.52 грн |
| 500+ | 10.97 грн |
| 1000+ | 9.81 грн |
| 2000+ | 8.83 грн |
| 5000+ | 7.65 грн |
| DMG1029SV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 60V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 60V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 313611 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.17 грн |
| 15+ | 23.29 грн |
| 100+ | 14.81 грн |
| 500+ | 10.46 грн |
| 1000+ | 9.35 грн |
| DMN2075UDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
Description: MOSFET N-CH 20V 2.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
на замовлення 11950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.13 грн |
| 13+ | 26.57 грн |
| 100+ | 16.97 грн |
| 500+ | 12.00 грн |
| 1000+ | 10.74 грн |
| DMP3105LVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.29 грн |
| 6000+ | 6.37 грн |
| 9000+ | 6.04 грн |
| DSR6U600P5-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 600V 6A POWERDI5
Description: DIODE GEN PURP 600V 6A POWERDI5
товару немає в наявності
В кошику
од. на суму грн.
| SBR30A45CTB |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 45V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE ARR SBR 45V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| SBR40U200CTB |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 200V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Description: DIODE ARR SBR 200V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.99 грн |
| 50+ | 119.47 грн |
| 100+ | 98.30 грн |
| 500+ | 78.05 грн |
| 1000+ | 66.23 грн |
| 2000+ | 62.92 грн |
| DMN62D0SFD-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 540MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Description: MOSFET N-CH 60V 540MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
на замовлення 201000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.77 грн |
| 6000+ | 5.89 грн |
| 9000+ | 5.58 грн |
| 15000+ | 4.90 грн |
| 21000+ | 4.70 грн |
| 30000+ | 4.51 грн |
| 75000+ | 4.02 грн |
| 150000+ | 3.99 грн |
| DMP2018LFK-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 9.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: U-DFN2523-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
Description: MOSFET P-CH 20V 9.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: U-DFN2523-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.05 грн |
| 6000+ | 10.62 грн |
| 9000+ | 10.12 грн |
















