Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72708) > Сторінка 227 з 1212
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SBR30A45CTB | Diodes Incorporated |
Description: DIODE ARR SBR 45V 15A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBR40U200CTB | Diodes Incorporated |
Description: DIODE ARR SBR 200V 20A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 200 V |
на замовлення 2750 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMN62D0SFD-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 540MA 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: X1-DFN1212-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V |
на замовлення 201000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMP2018LFK-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 9.2A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: U-DFN2523-6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMS3016SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7A PWRDI3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DSR6U600P5-13 | Diodes Incorporated |
Description: DIODE GEN PURP 600V 6A POWERDI5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DMS3016SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7A PWRDI3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DSR6U600P5-13 | Diodes Incorporated |
Description: DIODE GEN PURP 600V 6A POWERDI5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DMN62D0SFD-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 540MA 3DFNPackaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: X1-DFN1212-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V |
на замовлення 203071 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMP2018LFK-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 9.2A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: U-DFN2523-6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V |
на замовлення 14342 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMP3105LVT-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.1A TSOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V Power Dissipation (Max): 1.15W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V |
на замовлення 12629 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMP58D0LFB-7B | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA 3-DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DMP58D0LFB-7B | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA 3-DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PI5PD2065UEEX | Diodes Incorporated |
Description: IC PWR SWITCH N-CHAN 1:1 8MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-MSOP-EP Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PI5PD2069WEX | Diodes Incorporated |
Description: IC PWR SWITCH N-CHAN 1:1 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 105°C (TJ) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.1A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PI4ULS5V102GAEX | Diodes Incorporated |
Description: IC TRNSLTR BIDIRECTIONAL 8CSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PI4ULS5V102UEX | Diodes Incorporated |
Description: IC TRNSLTR BIDIRECTIONAL 8MSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PI4ULS5V104GAEX | Diodes Incorporated |
Description: IC TRNSLTR BIDIRECTIONAL 12CSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PT7M7811STBEX | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT143 |
на замовлення 3211 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
|
PI4ULS5V104GAEX | Diodes Incorporated |
Description: IC TRNSLTR BIDIRECTIONAL 12CSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PT7C43390WEX | Diodes Incorporated |
Description: IC RTC CLK/CALENDAR I2C 8SOICFeatures: Alarm, Leap Year, Square Wave Output Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.3V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-SOIC Current - Timekeeping (Max): 0.65µA ~ 0.7µA @ 3V ~ 5V DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PT7C4563UEX | Diodes Incorporated |
Description: IC RTC CLK/CALENDAR I2C 8MSOPFeatures: Alarm, Leap Year, Square Wave Output Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.3V ~ 5.5V Time Format: HH:MM:SS (24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-MSOP Current - Timekeeping (Max): 0.65µA ~ 0.85µA @ 3V ~ 5V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PI5PD2065WEX | Diodes Incorporated |
Description: IC PWR SWITCH N-CHAN 1:1 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PI4ULS5V104GAEX | Diodes Incorporated |
Description: IC TRNSLTR BIDIRECTIONAL 12CSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PT7C43390WEX | Diodes Incorporated |
Description: IC RTC CLK/CALENDAR I2C 8SOICFeatures: Alarm, Leap Year, Square Wave Output Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.3V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-SOIC Current - Timekeeping (Max): 0.65µA ~ 0.7µA @ 3V ~ 5V DigiKey Programmable: Not Verified |
на замовлення 3380 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PI4ULS5V102GAEX | Diodes Incorporated |
Description: IC TRNSLTR BIDIRECTIONAL 8CSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PI4ULS5V102GAEX | Diodes Incorporated |
Description: IC TRNSLTR BIDIRECTIONAL 8CSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PI4ULS5V102UEX | Diodes Incorporated |
Description: IC TRNSLTR BIDIRECTIONAL 8MSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBR3U60P1-7 | Diodes Incorporated |
Description: DIODE SBR 60V 3A POWERDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SBR12U45LH-13 | Diodes Incorporated |
Description: DIODE SBR 45V 12A POWERDI5SPPackaging: Tape & Reel (TR) Package / Case: PowerDI™ 5SP Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 12A Supplier Device Package: PowerDI5SP™ Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 12 A Current - Reverse Leakage @ Vr: 300 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBR130SV-7 | Diodes Incorporated |
Description: DIODE SBR 30V 1A SOT563 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
SBR1U30SV-7 | Diodes Incorporated |
Description: DIODE SBR 30V 1A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 1A Supplier Device Package: SOT-563 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBR130SV-7 | Diodes Incorporated |
Description: DIODE SBR 30V 1A SOT563 |
на замовлення 8100 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SBR3U60P1-7 | Diodes Incorporated |
Description: DIODE SBR 60V 3A POWERDI 123Packaging: Cut Tape (CT) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
на замовлення 23513 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
AL5802-7 | Diodes Incorporated |
Description: IC LED DRVR LIN PWM 120MA SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Voltage - Output: 0.8V ~ 30V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Applications: Signage Current - Output / Channel: 120mA Internal Switch(s): Yes Supplier Device Package: SOT-26 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 30V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
AP2331SA-7 | Diodes Incorporated |
Description: IC CURRENT SWITCH SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Sensing Method: High-Side Mounting Type: Surface Mount Function: Current Switch Voltage - Input: 2.7V ~ 5.2V Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Supplier Device Package: SOT-23-3 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BAS21TW-7 | Diodes Incorporated |
Description: DIODE ARRAY GP 250V 200MA SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-363 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMN2300U-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 1.24A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
|
DMP1245UFCL-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 6.6A X1-DFN1616Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V Power Dissipation (Max): 613mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMP4015SK3-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 14A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 3.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V |
на замовлення 165000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMG7702SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A POWERDI3333 |
на замовлення 291 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMP1096UCB4-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 2.6A U-WLB1010-4 Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 102mOhm @ 500mA, 4.5V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
DMN2300U-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 1.24A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V |
на замовлення 2861 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMP4015SK3-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 14A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 3.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V |
на замовлення 167229 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DSL12AW-7 | Diodes Incorporated |
Description: TRANS PNP 12V 2A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V Frequency - Transition: 180MHz Supplier Device Package: SOT-363 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 450 mW |
на замовлення 1274 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMN3024SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 |
на замовлення 1521 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
|
DMP1245UFCL-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 6.6A X1-DFN1616Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V Power Dissipation (Max): 613mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V |
на замовлення 13810 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
AL5802-7 | Diodes Incorporated |
Description: IC LED DRVR LIN PWM 120MA SOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Voltage - Output: 0.8V ~ 30V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Applications: Signage Current - Output / Channel: 120mA Internal Switch(s): Yes Supplier Device Package: SOT-26 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 30V Part Status: Active |
на замовлення 3669 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
LMV324BG-13 | Diodes Incorporated |
Description: IC OPAMP GP 4 CIRCUIT 14SOPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 340µA (x4 Channels) Slew Rate: 1V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 15 nA Voltage - Input Offset: 1.7 mV Supplier Device Package: 14-SO Part Status: Active Number of Circuits: 4 Current - Output / Channel: 90 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2910 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BAV99BRLP-7 | Diodes Incorporated |
Description: DIODE ARRAY GP 75V 300MA 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 300mA (DC) Supplier Device Package: U-DFN2020-6 (Type B) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
BSS127SSN-7 | Diodes Incorporated |
Description: MOSFET N-CH 600V 50MA SC59Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
DMG7702SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A POWERDI3333 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
DMN3730U-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 750MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMP1096UCB4-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 2.6A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 102mOhm @ 500mA, 4.5V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
LMV324BG-13 | Diodes Incorporated |
Description: IC OPAMP GP 4 CIRCUIT 14SOPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 340µA (x4 Channels) Slew Rate: 1V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 15 nA Voltage - Input Offset: 1.7 mV Supplier Device Package: 14-SO Part Status: Active Number of Circuits: 4 Current - Output / Channel: 90 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
DMN3730U-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 750MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V |
на замовлення 99548 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
AP2331SA-7 | Diodes Incorporated |
Description: IC CURRENT SWITCH SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Sensing Method: High-Side Mounting Type: Surface Mount Function: Current Switch Voltage - Input: 2.7V ~ 5.2V Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Supplier Device Package: SOT-23-3 |
на замовлення 11091 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BAS21TW-7 | Diodes Incorporated |
Description: DIODE ARRAY GP 250V 200MA SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-363 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 12109 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
BSS127SSN-7 | Diodes Incorporated |
Description: MOSFET N-CH 600V 50MA SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V |
на замовлення 2424 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PI6CV304LEX | Diodes Incorporated |
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS Type: Fanout Buffer (Distribution) Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP Frequency - Max: 160 MHz |
на замовлення 1567500 шт: термін постачання 21-31 дні (днів) |
|
| SBR30A45CTB |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 45V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE ARR SBR 45V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| SBR40U200CTB |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 200V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Description: DIODE ARR SBR 200V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.09 грн |
| 50+ | 120.31 грн |
| 100+ | 99.00 грн |
| 500+ | 78.61 грн |
| 1000+ | 66.70 грн |
| 2000+ | 63.36 грн |
| DMN62D0SFD-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 540MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Description: MOSFET N-CH 60V 540MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
на замовлення 201000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.81 грн |
| 6000+ | 5.94 грн |
| 9000+ | 5.62 грн |
| 15000+ | 4.93 грн |
| 21000+ | 4.73 грн |
| 30000+ | 4.54 грн |
| 75000+ | 4.05 грн |
| 150000+ | 4.02 грн |
| DMP2018LFK-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 9.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: U-DFN2523-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
Description: MOSFET P-CH 20V 9.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: U-DFN2523-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.13 грн |
| 6000+ | 10.70 грн |
| 9000+ | 10.19 грн |
| DMS3016SFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 7A PWRDI3333-8
Description: MOSFET N-CH 30V 7A PWRDI3333-8
товару немає в наявності
В кошику
од. на суму грн.
| DSR6U600P5-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 600V 6A POWERDI5
Description: DIODE GEN PURP 600V 6A POWERDI5
товару немає в наявності
В кошику
од. на суму грн.
| DMS3016SFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 7A PWRDI3333-8
Description: MOSFET N-CH 30V 7A PWRDI3333-8
товару немає в наявності
В кошику
од. на суму грн.
| DSR6U600P5-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 600V 6A POWERDI5
Description: DIODE GEN PURP 600V 6A POWERDI5
товару немає в наявності
В кошику
од. на суму грн.
| DMN62D0SFD-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 540MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
Description: MOSFET N-CH 60V 540MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: X1-DFN1212-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
на замовлення 203071 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.73 грн |
| 18+ | 18.75 грн |
| 100+ | 11.79 грн |
| 500+ | 8.24 грн |
| 1000+ | 7.32 грн |
| DMP2018LFK-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 9.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: U-DFN2523-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
Description: MOSFET P-CH 20V 9.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: U-DFN2523-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4748 pF @ 10 V
на замовлення 14342 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.17 грн |
| 11+ | 31.96 грн |
| 100+ | 20.57 грн |
| 500+ | 14.69 грн |
| 1000+ | 13.20 грн |
| DMP3105LVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
Description: MOSFET P-CH 30V 3.1A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 839 pF @ 15 V
на замовлення 12629 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.31 грн |
| 17+ | 19.90 грн |
| 100+ | 12.64 грн |
| 500+ | 8.87 грн |
| 1000+ | 7.91 грн |
| DMP58D0LFB-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA 3-DFN
Description: MOSFET P-CH 50V 180MA 3-DFN
товару немає в наявності
В кошику
од. на суму грн.
| DMP58D0LFB-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA 3-DFN
Description: MOSFET P-CH 50V 180MA 3-DFN
товару немає в наявності
В кошику
од. на суму грн.
| PI5PD2065UEEX |
![]() |
Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 1:1 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
товару немає в наявності
В кошику
од. на суму грн.
| PI5PD2069WEX |
![]() |
Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 105°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 105°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
товару немає в наявності
В кошику
од. на суму грн.
| PI4ULS5V102GAEX |
![]() |
Виробник: Diodes Incorporated
Description: IC TRNSLTR BIDIRECTIONAL 8CSP
Description: IC TRNSLTR BIDIRECTIONAL 8CSP
товару немає в наявності
В кошику
од. на суму грн.
| PI4ULS5V102UEX |
![]() |
Виробник: Diodes Incorporated
Description: IC TRNSLTR BIDIRECTIONAL 8MSOP
Description: IC TRNSLTR BIDIRECTIONAL 8MSOP
товару немає в наявності
В кошику
од. на суму грн.
| PI4ULS5V104GAEX |
![]() |
Виробник: Diodes Incorporated
Description: IC TRNSLTR BIDIRECTIONAL 12CSP
Description: IC TRNSLTR BIDIRECTIONAL 12CSP
товару немає в наявності
В кошику
од. на суму грн.
| PT7M7811STBEX |
![]() |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT143
Description: IC SUPERVISOR 1 CHANNEL SOT143
на замовлення 3211 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PI4ULS5V104GAEX |
![]() |
Виробник: Diodes Incorporated
Description: IC TRNSLTR BIDIRECTIONAL 12CSP
Description: IC TRNSLTR BIDIRECTIONAL 12CSP
товару немає в наявності
В кошику
од. на суму грн.
| PT7C43390WEX |
![]() |
Виробник: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.65µA ~ 0.7µA @ 3V ~ 5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.65µA ~ 0.7µA @ 3V ~ 5V
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 55.21 грн |
| PT7C4563UEX |
![]() |
Виробник: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8MSOP
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Current - Timekeeping (Max): 0.65µA ~ 0.85µA @ 3V ~ 5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8MSOP
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Current - Timekeeping (Max): 0.65µA ~ 0.85µA @ 3V ~ 5V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| PI5PD2065WEX |
![]() |
Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 1:1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
товару немає в наявності
В кошику
од. на суму грн.
| PI4ULS5V104GAEX |
![]() |
Виробник: Diodes Incorporated
Description: IC TRNSLTR BIDIRECTIONAL 12CSP
Description: IC TRNSLTR BIDIRECTIONAL 12CSP
товару немає в наявності
В кошику
од. на суму грн.
| PT7C43390WEX |
![]() |
Виробник: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Features: Alarm, Leap Year, Square Wave Output
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.65µA ~ 0.7µA @ 3V ~ 5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Features: Alarm, Leap Year, Square Wave Output
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.65µA ~ 0.7µA @ 3V ~ 5V
DigiKey Programmable: Not Verified
на замовлення 3380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.50 грн |
| 10+ | 111.99 грн |
| 25+ | 106.34 грн |
| 100+ | 81.96 грн |
| 250+ | 76.62 грн |
| 500+ | 67.71 грн |
| 1000+ | 52.58 грн |
| PI4ULS5V102GAEX |
![]() |
Виробник: Diodes Incorporated
Description: IC TRNSLTR BIDIRECTIONAL 8CSP
Description: IC TRNSLTR BIDIRECTIONAL 8CSP
товару немає в наявності
В кошику
од. на суму грн.
| PI4ULS5V102GAEX |
![]() |
Виробник: Diodes Incorporated
Description: IC TRNSLTR BIDIRECTIONAL 8CSP
Description: IC TRNSLTR BIDIRECTIONAL 8CSP
товару немає в наявності
В кошику
од. на суму грн.
| PI4ULS5V102UEX |
![]() |
Виробник: Diodes Incorporated
Description: IC TRNSLTR BIDIRECTIONAL 8MSOP
Description: IC TRNSLTR BIDIRECTIONAL 8MSOP
товару немає в наявності
В кошику
од. на суму грн.
| SBR3U60P1-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SBR 60V 3A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.54 грн |
| 6000+ | 6.23 грн |
| 9000+ | 6.02 грн |
| SBR12U45LH-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 12A POWERDI5SP
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5SP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI5SP™
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 12 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Description: DIODE SBR 45V 12A POWERDI5SP
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5SP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI5SP™
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 12 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| SBR130SV-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 30V 1A SOT563
Description: DIODE SBR 30V 1A SOT563
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.66 грн |
| SBR1U30SV-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 30V 1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-563
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Description: DIODE SBR 30V 1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-563
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| SBR130SV-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 30V 1A SOT563
Description: DIODE SBR 30V 1A SOT563
на замовлення 8100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.16 грн |
| 12+ | 28.74 грн |
| 100+ | 21.42 грн |
| 500+ | 15.80 грн |
| 1000+ | 12.21 грн |
| SBR3U60P1-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SBR 60V 3A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 23513 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 12.01 грн |
| 36+ | 9.25 грн |
| AL5802-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC LED DRVR LIN PWM 120MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 0.8V ~ 30V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Signage
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 30V
Part Status: Active
Description: IC LED DRVR LIN PWM 120MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 0.8V ~ 30V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Signage
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 30V
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| AP2331SA-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC CURRENT SWITCH SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Switch
Voltage - Input: 2.7V ~ 5.2V
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Description: IC CURRENT SWITCH SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Switch
Voltage - Input: 2.7V ~ 5.2V
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.91 грн |
| 6000+ | 10.20 грн |
| 9000+ | 10.05 грн |
| BAS21TW-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 250V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE ARRAY GP 250V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.04 грн |
| 6000+ | 3.78 грн |
| 9000+ | 3.64 грн |
| DMN2300U-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1.24A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
Description: MOSFET N-CH 20V 1.24A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMP1245UFCL-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 6.6A X1-DFN1616
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V
Power Dissipation (Max): 613mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V
Description: MOSFET P-CH 12V 6.6A X1-DFN1616
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V
Power Dissipation (Max): 613mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.69 грн |
| 6000+ | 15.30 грн |
| 9000+ | 14.64 грн |
| DMP4015SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 14A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Description: MOSFET P-CH 40V 14A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 27.25 грн |
| 5000+ | 24.31 грн |
| 7500+ | 23.41 грн |
| DMG7702SFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 12A POWERDI3333
Description: MOSFET N-CH 30V 12A POWERDI3333
на замовлення 291 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.89 грн |
| 10+ | 51.62 грн |
| 100+ | 39.59 грн |
| DMP1096UCB4-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 2.6A U-WLB1010-4
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 500mA, 4.5V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1010-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 6 V
Description: MOSFET P-CH 12V 2.6A U-WLB1010-4
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 500mA, 4.5V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1010-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| DMN2300U-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1.24A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
Description: MOSFET N-CH 20V 1.24A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
на замовлення 2861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.60 грн |
| 13+ | 26.43 грн |
| 100+ | 16.92 грн |
| 500+ | 11.99 грн |
| 1000+ | 10.74 грн |
| DMP4015SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 14A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Description: MOSFET P-CH 40V 14A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
на замовлення 167229 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 105.49 грн |
| 10+ | 64.09 грн |
| 100+ | 42.51 грн |
| 500+ | 31.21 грн |
| 1000+ | 28.41 грн |
| DSL12AW-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 12V 2A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 450 mW
Description: TRANS PNP 12V 2A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 450 mW
на замовлення 1274 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.73 грн |
| 26+ | 12.80 грн |
| 100+ | 8.60 грн |
| 500+ | 6.20 грн |
| 1000+ | 5.57 грн |
| DMN3024SFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
на замовлення 1521 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMP1245UFCL-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 6.6A X1-DFN1616
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V
Power Dissipation (Max): 613mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V
Description: MOSFET P-CH 12V 6.6A X1-DFN1616
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 4A, 4.5V
Power Dissipation (Max): 613mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1357.4 pF @ 10 V
на замовлення 13810 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.89 грн |
| 10+ | 41.05 грн |
| 100+ | 27.97 грн |
| 500+ | 20.56 грн |
| 1000+ | 18.58 грн |
| AL5802-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC LED DRVR LIN PWM 120MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 0.8V ~ 30V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Signage
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 30V
Part Status: Active
Description: IC LED DRVR LIN PWM 120MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 0.8V ~ 30V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Signage
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 30V
Part Status: Active
на замовлення 3669 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.15 грн |
| 29+ | 11.56 грн |
| 33+ | 10.21 грн |
| 100+ | 8.18 грн |
| 250+ | 7.52 грн |
| 500+ | 7.12 грн |
| 1000+ | 6.68 грн |
| LMV324BG-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 340µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 15 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 340µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 15 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2910 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.31 грн |
| 15+ | 22.96 грн |
| 25+ | 20.48 грн |
| 100+ | 16.68 грн |
| 250+ | 15.46 грн |
| 500+ | 14.73 грн |
| 1000+ | 13.89 грн |
| BAV99BRLP-7 |
Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: U-DFN2020-6 (Type B)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Description: DIODE ARRAY GP 75V 300MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: U-DFN2020-6 (Type B)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| BSS127SSN-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 600V 50MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V
Description: MOSFET N-CH 600V 50MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| DMG7702SFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 12A POWERDI3333
Description: MOSFET N-CH 30V 12A POWERDI3333
товару немає в наявності
В кошику
од. на суму грн.
| DMN3730U-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 750MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
Description: MOSFET N-CH 30V 750MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.86 грн |
| 6000+ | 9.10 грн |
| 9000+ | 8.19 грн |
| 30000+ | 7.58 грн |
| 75000+ | 7.12 грн |
| DMP1096UCB4-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 2.6A U-WLB1010-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 500mA, 4.5V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1010-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 6 V
Description: MOSFET P-CH 12V 2.6A U-WLB1010-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 500mA, 4.5V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-WLB1010-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| LMV324BG-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 340µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 15 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 340µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 15 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 14-SO
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 14.93 грн |
| DMN3730U-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 750MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
Description: MOSFET N-CH 30V 750MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
на замовлення 99548 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.02 грн |
| 13+ | 27.34 грн |
| 100+ | 16.39 грн |
| 500+ | 14.24 грн |
| 1000+ | 9.68 грн |
| AP2331SA-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC CURRENT SWITCH SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Switch
Voltage - Input: 2.7V ~ 5.2V
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
Description: IC CURRENT SWITCH SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Current Switch
Voltage - Input: 2.7V ~ 5.2V
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: SOT-23-3
на замовлення 11091 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.73 грн |
| 20+ | 17.26 грн |
| 25+ | 15.36 грн |
| 100+ | 12.42 грн |
| 250+ | 11.48 грн |
| 500+ | 10.91 грн |
| 1000+ | 10.27 грн |
| BAS21TW-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 250V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE ARRAY GP 250V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 12109 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 12.01 грн |
| 37+ | 9.00 грн |
| 100+ | 6.92 грн |
| 500+ | 5.76 грн |
| BSS127SSN-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 600V 50MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V
Description: MOSFET N-CH 600V 50MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V
на замовлення 2424 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.31 грн |
| 16+ | 20.65 грн |
| 100+ | 13.12 грн |
| 500+ | 9.20 грн |
| 1000+ | 8.21 грн |
| PI6CV304LEX |
![]() |
Виробник: Diodes Incorporated
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 160 MHz
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 160 MHz
на замовлення 1567500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 33.78 грн |
| 5000+ | 30.08 грн |
| 7500+ | 28.84 грн |
| 12500+ | 26.95 грн |
























