Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72157) > Сторінка 224 з 1203
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AP2411S-13 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 8SOFeatures: Load Discharge, Status Flag Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AP5725WG-7 | Diodes Incorporated |
Description: IC LED DRV RGLTR PWM 750MA SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Voltage - Output: 26V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 750mA (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: SOT-26 Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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BAS116LPH4-7B | Diodes Incorporated |
Description: DIODE STD 85V 215MA X2DFN10062Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: X2-DFN1006-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N4448WSF-7 | Diodes Incorporated |
Description: DIODE STANDARD 75V 500MA SOD323FPackaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-323F Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP2411S-13 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 8SOFeatures: Load Discharge, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Active |
на замовлення 4470 шт: термін постачання 21-31 дні (днів) |
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2DA1774QLP-7B | Diodes Incorporated |
Description: TRANS PNP 40V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: X1-DFN1006-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 3206 шт: термін постачання 21-31 дні (днів) |
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AP5725WG-7 | Diodes Incorporated |
Description: IC LED DRV RGLTR PWM 750MA SOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Voltage - Output: 26V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 750mA (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: SOT-26 Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V |
на замовлення 58896 шт: термін постачання 21-31 дні (днів) |
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2DC4617QLP-7B | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
на замовлення 66557 шт: термін постачання 21-31 дні (днів) |
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BAS116LPH4-7B | Diodes Incorporated |
Description: DIODE STD 85V 215MA X2DFN10062Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: X2-DFN1006-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
на замовлення 3924 шт: термін постачання 21-31 дні (днів) |
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AL9910-5SP-13 | Diodes Incorporated |
Description: IC LED DRIVER OFFL PWM 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 25kHz ~ 300kHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 105°C (TA) Applications: Backlight, Lighting, Signage Internal Switch(s): No Topology: Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 8-SO-EP Dimming: Analog, PWM Voltage - Supply (Min): 15V Voltage - Supply (Max): 500V Part Status: Active |
на замовлення 2456 шт: термін постачання 21-31 дні (днів) |
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AP2401FGE-7 | Diodes Incorporated |
Description: IC USB SWITCH DFN3030-8Packaging: Cut Tape (CT) |
на замовлення 2199 шт: термін постачання 21-31 дні (днів) |
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AP2401MP-13 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHAN 1:1 8MSOPFeatures: Load Discharge, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-MSOP-EP Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
на замовлення 8452 шт: термін постачання 21-31 дні (днів) |
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AP2401S-13 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 8SOFeatures: Load Discharge, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Active |
на замовлення 17721 шт: термін постачання 21-31 дні (днів) |
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1SS361LPH4-7B | Diodes Incorporated |
Description: DIODE STD 80V 100MA X2DFN10062Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: X2-DFN1006-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 242781 шт: термін постачання 21-31 дні (днів) |
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AP2411MP-13 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHAN 1:1 8MSOPFeatures: Load Discharge, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-MSOP-EP Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
на замовлення 60732 шт: термін постачання 21-31 дні (днів) |
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ZXMP4A57E6TA | Diodes Incorporated |
Description: MOSFET P-CH 40V 2.9A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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ZXRD060FK-7 | Diodes Incorporated |
Description: IC VREF SHUNT ADJ 1% 10DFNTolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt, Dual Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: U-DFN2626-10 Voltage - Output (Min/Fixed): 0.2V Current - Cathode: 300 µA Current - Output: 15 mA Voltage - Output (Max): 18 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMP4A57E6TA | Diodes Incorporated |
Description: MOSFET P-CH 40V 2.9A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V |
на замовлення 67653 шт: термін постачання 21-31 дні (днів) |
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ZXRD060FK-7 | Diodes Incorporated |
Description: IC VREF SHUNT ADJ 1% 10DFNTolerance: ±1% Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt, Dual Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: U-DFN2626-10 Voltage - Output (Min/Fixed): 0.2V Current - Cathode: 300 µA Current - Output: 15 mA Voltage - Output (Max): 18 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DN0150ALP4-7B | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A DFN1006H4-3 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DN0150BLP4-7B | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A DFN1006H4-3 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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MMBT3904LP-7B | Diodes Incorporated |
Description: TRANS NPN 40V 0.2A X1-DFN1006-3Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: X1-DFN1006-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBT3906LP-7B | Diodes Incorporated |
Description: TRANS PNP 40V 0.2A X1-DFN1006-3Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: X1-DFN1006-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBR1A40S1-7 | Diodes Incorporated |
Description: DIODE SBR 40V 1A SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SBR3045CTB-13 | Diodes Incorporated |
Description: DIODE ARRAY SBR 45V 15A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DSS2515M-7B | Diodes Incorporated |
Description: TRANS NPN 15V 0.5A X1-DFN1006-3Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 250MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DSS2540M-7B | Diodes Incorporated |
Description: TRANS NPN 40V 0.5A X1-DFN1006-3Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 300MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 980000 шт: термін постачання 21-31 дні (днів) |
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DSS3540M-7B | Diodes Incorporated |
Description: TRANS PNP 40V 0.5A X1-DFN1006-3Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBR10A45SP5-13 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 45 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SBR2U150SA-13 | Diodes Incorporated |
Description: DIODE SBR 150V 2A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Current - Reverse Leakage @ Vr: 75 µA @ 150 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DN0150BLP4-7B | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A DFN1006H4-3 |
на замовлення 17785 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DN0150BLP4-7B | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A DFN1006H4-3 |
на замовлення 17785 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR2U150SA-13 | Diodes Incorporated |
Description: DIODE SBR 150V 2A SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Current - Reverse Leakage @ Vr: 75 µA @ 150 V |
на замовлення 9157 шт: термін постачання 21-31 дні (днів) |
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DP0150BLP4-7B | Diodes Incorporated |
Description: TRANS PNP 50V 0.1A X2-DFN1006-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: X2-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW |
на замовлення 8541052 шт: термін постачання 21-31 дні (днів) |
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SBR3045CTB-13 | Diodes Incorporated |
Description: DIODE ARRAY SBR 45V 15A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DSS2515M-7B | Diodes Incorporated |
Description: TRANS NPN 15V 0.5A X1-DFN1006-3Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 250MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DSS2540M-7B | Diodes Incorporated |
Description: TRANS NPN 40V 0.5A X1-DFN1006-3Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 300MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 982913 шт: термін постачання 21-31 дні (днів) |
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DSS3540M-7B | Diodes Incorporated |
Description: TRANS PNP 40V 0.5A X1-DFN1006-3Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
на замовлення 9999 шт: термін постачання 21-31 дні (днів) |
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MMBT3904LP-7B | Diodes Incorporated |
Description: TRANS NPN 40V 0.2A X1-DFN1006-3Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: X1-DFN1006-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBT3906LP-7B | Diodes Incorporated |
Description: TRANS PNP 40V 0.2A X1-DFN1006-3Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: X1-DFN1006-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q101 |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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DN0150ALP4-7B | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A DFN1006H4-3 |
на замовлення 18100 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DN0150ALP4-7B | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A DFN1006H4-3 |
на замовлення 18100 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBR10A45SP5-13 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 45 V |
на замовлення 16940 шт: термін постачання 21-31 дні (днів) |
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BC847BLP-7B | Diodes Incorporated |
Description: TRANS NPN 45V 0.1A X1-DFN1006-3Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
на замовлення 460000 шт: термін постачання 21-31 дні (днів) |
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BC857BLP-7B | Diodes Incorporated |
Description: TRANS PNP 45V 0.1A X1-DFN1006-3Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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BSN20-7 | Diodes Incorporated |
Description: MOSFET N-CH 50V 500MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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DMC2038LVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 3.7A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Part Status: Not For New Designs |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DMG4511SK4-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 35V 5.3A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMN2990UDJ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 0.45A SOT963Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 6330000 шт: термін постачання 21-31 дні (днів) |
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DMN3110S-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 2.5A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V |
на замовлення 726000 шт: термін постачання 21-31 дні (днів) |
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DMN4031SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 5.2A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMN4800LSSL-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 8A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V Power Dissipation (Max): 1.46W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMC3021LK4-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 9.4A TO252-4LPackaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMG1026UV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.41A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 580mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 888000 шт: термін постачання 21-31 дні (днів) |
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DMG2307L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.5A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V |
на замовлення 674000 шт: термін постачання 21-31 дні (днів) |
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DMG4822SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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DMG6602SVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.4A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Not For New Designs |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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DMS3016SSSA-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 9.8A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.54W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN3110S-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 2.5A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V |
на замовлення 726619 шт: термін постачання 21-31 дні (днів) |
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DMG2307L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.5A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V |
на замовлення 674279 шт: термін постачання 21-31 дні (днів) |
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| AP2411S-13 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 9.36 грн |
| AP5725WG-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRV RGLTR PWM 750MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 26V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Description: IC LED DRV RGLTR PWM 750MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 26V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.48 грн |
| BAS116LPH4-7B |
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Виробник: Diodes Incorporated
Description: DIODE STD 85V 215MA X2DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE STD 85V 215MA X2DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4448WSF-7 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 500MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Description: DIODE STANDARD 75V 500MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| AP2411S-13 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
на замовлення 4470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.59 грн |
| 21+ | 14.77 грн |
| 25+ | 13.11 грн |
| 100+ | 10.59 грн |
| 250+ | 9.78 грн |
| 500+ | 9.29 грн |
| 1000+ | 8.74 грн |
| 2DA1774QLP-7B |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS PNP 40V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 3206 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.82 грн |
| 16+ | 19.50 грн |
| 100+ | 9.86 грн |
| 500+ | 8.20 грн |
| 1000+ | 6.38 грн |
| 2000+ | 5.71 грн |
| AP5725WG-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRV RGLTR PWM 750MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 26V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Description: IC LED DRV RGLTR PWM 750MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 26V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
на замовлення 58896 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.37 грн |
| 15+ | 20.55 грн |
| 25+ | 18.33 грн |
| 100+ | 14.93 грн |
| 250+ | 13.84 грн |
| 500+ | 13.18 грн |
| 1000+ | 12.43 грн |
| 2DC4617QLP-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
на замовлення 66557 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.35 грн |
| 21+ | 14.70 грн |
| 100+ | 8.01 грн |
| 500+ | 4.63 грн |
| 1000+ | 3.15 грн |
| 2000+ | 2.68 грн |
| 5000+ | 2.38 грн |
| BAS116LPH4-7B |
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Виробник: Diodes Incorporated
Description: DIODE STD 85V 215MA X2DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE STD 85V 215MA X2DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 3924 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.68 грн |
| 48+ | 6.30 грн |
| 100+ | 5.53 грн |
| 500+ | 3.95 грн |
| 1000+ | 3.51 грн |
| 2000+ | 3.44 грн |
| AL9910-5SP-13 |
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Виробник: Diodes Incorporated
Description: IC LED DRIVER OFFL PWM 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz ~ 300kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Backlight, Lighting, Signage
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 15V
Voltage - Supply (Max): 500V
Part Status: Active
Description: IC LED DRIVER OFFL PWM 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz ~ 300kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Backlight, Lighting, Signage
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 15V
Voltage - Supply (Max): 500V
Part Status: Active
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.49 грн |
| 10+ | 86.17 грн |
| 25+ | 78.36 грн |
| 100+ | 65.52 грн |
| 250+ | 61.69 грн |
| 500+ | 59.39 грн |
| 1000+ | 56.55 грн |
| AP2401FGE-7 |
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на замовлення 2199 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.59 грн |
| 13+ | 24.37 грн |
| 25+ | 22.77 грн |
| 100+ | 17.09 грн |
| 250+ | 15.87 грн |
| 500+ | 13.43 грн |
| 1000+ | 10.21 грн |
| AP2401MP-13 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8MSOP
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH P-CHAN 1:1 8MSOP
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
на замовлення 8452 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.82 грн |
| 13+ | 23.92 грн |
| 25+ | 22.32 грн |
| 100+ | 16.76 грн |
| 250+ | 15.57 грн |
| 500+ | 13.18 грн |
| 1000+ | 10.02 грн |
| AP2401S-13 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Active
на замовлення 17721 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.82 грн |
| 13+ | 23.92 грн |
| 25+ | 22.32 грн |
| 100+ | 16.76 грн |
| 250+ | 15.57 грн |
| 500+ | 13.18 грн |
| 1000+ | 10.02 грн |
| 1SS361LPH4-7B |
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Виробник: Diodes Incorporated
Description: DIODE STD 80V 100MA X2DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE STD 80V 100MA X2DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 242781 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.25 грн |
| 25+ | 12.07 грн |
| 100+ | 7.51 грн |
| 500+ | 5.19 грн |
| 1000+ | 4.59 грн |
| 2000+ | 4.08 грн |
| 5000+ | 3.47 грн |
| AP2411MP-13 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8MSOP
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH P-CHAN 1:1 8MSOP
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MSOP-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
на замовлення 60732 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 52.18 грн |
| 10+ | 30.90 грн |
| 25+ | 25.77 грн |
| 100+ | 18.67 грн |
| 250+ | 15.96 грн |
| 500+ | 14.30 грн |
| 1000+ | 12.70 грн |
| ZXMP4A57E6TA |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 2.9A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
Description: MOSFET P-CH 40V 2.9A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.31 грн |
| 6000+ | 14.45 грн |
| 9000+ | 13.81 грн |
| 15000+ | 12.29 грн |
| 21000+ | 12.20 грн |
| ZXRD060FK-7 |
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Виробник: Diodes Incorporated
Description: IC VREF SHUNT ADJ 1% 10DFN
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt, Dual
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: U-DFN2626-10
Voltage - Output (Min/Fixed): 0.2V
Current - Cathode: 300 µA
Current - Output: 15 mA
Voltage - Output (Max): 18 V
Description: IC VREF SHUNT ADJ 1% 10DFN
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt, Dual
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: U-DFN2626-10
Voltage - Output (Min/Fixed): 0.2V
Current - Cathode: 300 µA
Current - Output: 15 mA
Voltage - Output (Max): 18 V
товару немає в наявності
В кошику
од. на суму грн.
| ZXMP4A57E6TA |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 2.9A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
Description: MOSFET P-CH 40V 2.9A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
на замовлення 67653 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.98 грн |
| 10+ | 40.35 грн |
| 100+ | 26.23 грн |
| 500+ | 18.91 грн |
| 1000+ | 17.07 грн |
| ZXRD060FK-7 |
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Виробник: Diodes Incorporated
Description: IC VREF SHUNT ADJ 1% 10DFN
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt, Dual
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: U-DFN2626-10
Voltage - Output (Min/Fixed): 0.2V
Current - Cathode: 300 µA
Current - Output: 15 mA
Voltage - Output (Max): 18 V
Description: IC VREF SHUNT ADJ 1% 10DFN
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt, Dual
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: U-DFN2626-10
Voltage - Output (Min/Fixed): 0.2V
Current - Cathode: 300 µA
Current - Output: 15 mA
Voltage - Output (Max): 18 V
товару немає в наявності
В кошику
од. на суму грн.
| DN0150ALP4-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 0.1A DFN1006H4-3
Description: TRANS NPN 50V 0.1A DFN1006H4-3
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DN0150BLP4-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 0.1A DFN1006H4-3
Description: TRANS NPN 50V 0.1A DFN1006H4-3
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MMBT3904LP-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 40V 0.2A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS NPN 40V 0.2A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3906LP-7B |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 0.2A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SBR1A40S1-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SBR 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.67 грн |
| 6000+ | 6.36 грн |
| 9000+ | 6.21 грн |
| SBR3045CTB-13 |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE ARRAY SBR 45V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| DSS2515M-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 15V 0.5A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Description: TRANS NPN 15V 0.5A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| DSS2540M-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 40V 0.5A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS NPN 40V 0.5A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 980000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.43 грн |
| 20000+ | 3.91 грн |
| 30000+ | 3.89 грн |
| DSS3540M-7B |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 0.5A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS PNP 40V 0.5A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| SBR10A45SP5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 22.28 грн |
| 10000+ | 19.98 грн |
| 15000+ | 19.23 грн |
| SBR2U150SA-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 150V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 75 µA @ 150 V
Description: DIODE SBR 150V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 75 µA @ 150 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 16.34 грн |
| DN0150BLP4-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 0.1A DFN1006H4-3
Description: TRANS NPN 50V 0.1A DFN1006H4-3
на замовлення 17785 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DN0150BLP4-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 0.1A DFN1006H4-3
Description: TRANS NPN 50V 0.1A DFN1006H4-3
на замовлення 17785 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR2U150SA-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 150V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 75 µA @ 150 V
Description: DIODE SBR 150V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 75 µA @ 150 V
на замовлення 9157 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.71 грн |
| 13+ | 24.00 грн |
| 100+ | 23.45 грн |
| 500+ | 19.16 грн |
| 1000+ | 17.86 грн |
| 2000+ | 16.77 грн |
| DP0150BLP4-7B |
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Виробник: Diodes Incorporated
Description: TRANS PNP 50V 0.1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Description: TRANS PNP 50V 0.1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
на замовлення 8541052 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.07 грн |
| 10+ | 33.60 грн |
| 100+ | 21.64 грн |
| 500+ | 15.48 грн |
| 1000+ | 13.92 грн |
| 2000+ | 12.61 грн |
| 5000+ | 11.00 грн |
| SBR3045CTB-13 |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: DIODE ARRAY SBR 45V 15A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| DSS2515M-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 15V 0.5A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Description: TRANS NPN 15V 0.5A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| DSS2540M-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 40V 0.5A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS NPN 40V 0.5A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 982913 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.04 грн |
| 18+ | 16.80 грн |
| 100+ | 10.60 грн |
| 500+ | 7.42 грн |
| 1000+ | 6.61 грн |
| 2000+ | 5.92 грн |
| 5000+ | 5.09 грн |
| DSS3540M-7B |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 40V 0.5A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Description: TRANS PNP 40V 0.5A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 9999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.04 грн |
| 18+ | 16.72 грн |
| 100+ | 10.57 грн |
| 500+ | 7.40 грн |
| 1000+ | 6.58 грн |
| 2000+ | 5.90 грн |
| 5000+ | 5.07 грн |
| MMBT3904LP-7B |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 40V 0.2A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS NPN 40V 0.2A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3906LP-7B |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 40V 0.2A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A X1-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
на замовлення 35 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.82 грн |
| 15+ | 21.37 грн |
| DN0150ALP4-7B |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 50V 0.1A DFN1006H4-3
Description: TRANS NPN 50V 0.1A DFN1006H4-3
на замовлення 18100 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DN0150ALP4-7B |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 50V 0.1A DFN1006H4-3
Description: TRANS NPN 50V 0.1A DFN1006H4-3
на замовлення 18100 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBR10A45SP5-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
на замовлення 16940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.68 грн |
| 10+ | 55.80 грн |
| 100+ | 36.85 грн |
| 500+ | 26.92 грн |
| 1000+ | 24.46 грн |
| 2000+ | 22.38 грн |
| BC847BLP-7B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 45V 0.1A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS NPN 45V 0.1A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 460000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.89 грн |
| 20000+ | 6.11 грн |
| 30000+ | 5.85 грн |
| 50000+ | 5.21 грн |
| 70000+ | 5.04 грн |
| 100000+ | 4.88 грн |
| BC857BLP-7B |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 45V 0.1A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A X1-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.09 грн |
| 20000+ | 3.60 грн |
| 30000+ | 3.43 грн |
| 50000+ | 3.04 грн |
| 70000+ | 2.93 грн |
| BSN20-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 220mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.50 грн |
| 6000+ | 3.90 грн |
| 9000+ | 3.68 грн |
| 15000+ | 3.22 грн |
| 21000+ | 3.08 грн |
| 30000+ | 2.95 грн |
| DMC2038LVT-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 3.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
Description: MOSFET N/P-CH 20V 3.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.30 грн |
| 6000+ | 5.50 грн |
| 9000+ | 5.21 грн |
| DMG4511SK4-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 35V 5.3A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 35V 5.3A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 19.54 грн |
| DMN2990UDJ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.45A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
Description: MOSFET 2N-CH 20V 0.45A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 6330000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.01 грн |
| 20000+ | 6.67 грн |
| 30000+ | 6.64 грн |
| 50000+ | 6.06 грн |
| DMN3110S-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
на замовлення 726000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.10 грн |
| 6000+ | 11.59 грн |
| 9000+ | 11.06 грн |
| 15000+ | 9.83 грн |
| 21000+ | 9.57 грн |
| DMN4031SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 40V 5.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMN4800LSSL-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Power Dissipation (Max): 1.46W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
Description: MOSFET N-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Power Dissipation (Max): 1.46W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 12.83 грн |
| 5000+ | 11.30 грн |
| DMC3021LK4-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 9.4A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 30V 9.4A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DMG1026UV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 888000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.79 грн |
| 6000+ | 6.83 грн |
| 9000+ | 6.49 грн |
| 15000+ | 5.73 грн |
| 21000+ | 5.51 грн |
| 30000+ | 5.30 грн |
| 75000+ | 5.01 грн |
| DMG2307L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
на замовлення 674000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.15 грн |
| 6000+ | 5.79 грн |
| 9000+ | 5.13 грн |
| 30000+ | 4.75 грн |
| 75000+ | 4.04 грн |
| 150000+ | 3.88 грн |
| DMG4822SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 17.08 грн |
| 5000+ | 15.58 грн |
| DMG6602SVT-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Not For New Designs
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.40 грн |
| 6000+ | 6.47 грн |
| 9000+ | 6.14 грн |
| 15000+ | 5.40 грн |
| 21000+ | 5.20 грн |
| DMS3016SSSA-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 9.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Description: MOSFET N-CH 30V 9.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.8A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMN3110S-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
на замовлення 726619 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.85 грн |
| 10+ | 33.90 грн |
| 100+ | 21.93 грн |
| 500+ | 15.74 грн |
| 1000+ | 14.19 грн |
| DMG2307L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 371.3 pF @ 15 V
на замовлення 674279 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.04 грн |
| 16+ | 19.05 грн |
| 100+ | 9.59 грн |
| 500+ | 7.98 грн |
| 1000+ | 6.21 грн |
















