Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (71660) > Сторінка 335 з 1195
| Фото | Назва | Виробник | Інформація |
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D5V0M1U2LP3-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 11VC X3DFN06032Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: X3-DFN0603-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 11V Power - Peak Pulse: 120W Power Line Protection: No Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMG2302UK-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 2.8A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMPH6050SK3-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.2A/23.6A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMT3006LDK-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMT6004SCT | Diodes Incorporated |
Description: MOSFET N-CH 60V 100A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V Power Dissipation (Max): 2.3W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V |
на замовлення 139737 шт: термін постачання 21-31 дні (днів) |
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DRTR5V0U4LP16-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: U-DFN1616-6 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V Power Line Protection: Yes Part Status: Active |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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SBR2U100LP-7 | Diodes Incorporated |
Description: DIODE SBR 100V 1.5A X1DFN14113Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 1.5A Supplier Device Package: X1-DFN1411-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBR2U60S1F-7 | Diodes Incorporated |
Description: DIODE SBR 60V 2A SOD123FPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: Super Barrier Capacitance @ Vr, F: 75pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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D22V0S1U2WS-7 | Diodes Incorporated |
Description: TVS DIODE 22VWM 37VC SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 220pF @ 1MHz Current - Peak Pulse (10/1000µs): 30A (8/20µs) Voltage - Reverse Standoff (Typ): 22V (Max) Supplier Device Package: SOD-323 Unidirectional Channels: 1 Voltage - Breakdown (Min): 24V Voltage - Clamping (Max) @ Ipp: 37V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
на замовлення 64018 шт: термін постачання 21-31 дні (днів) |
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D5V0M1U2LP3-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 11VC X3DFN06032Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: X3-DFN0603-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 11V Power - Peak Pulse: 120W Power Line Protection: No Part Status: Active |
на замовлення 13955 шт: термін постачання 21-31 дні (днів) |
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DMG2302UK-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 2.8A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 3715 шт: термін постачання 21-31 дні (днів) |
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DMPH6050SK3-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.2A/23.6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V |
на замовлення 377 шт: термін постачання 21-31 дні (днів) |
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DMT3006LDK-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V |
на замовлення 2303 шт: термін постачання 21-31 дні (днів) |
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DMT3009LDT-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 30A 8VDFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active |
на замовлення 1662 шт: термін постачання 21-31 дні (днів) |
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DRTR5V0U4LP16-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: U-DFN1616-6 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V Power Line Protection: Yes Part Status: Active |
на замовлення 74150 шт: термін постачання 21-31 дні (днів) |
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SBR2U100LP-7 | Diodes Incorporated |
Description: DIODE SBR 100V 1.5A X1DFN14113Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 1.5A Supplier Device Package: X1-DFN1411-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 4318 шт: термін постачання 21-31 дні (днів) |
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SBR2U60S1F-7 | Diodes Incorporated |
Description: DIODE SBR 60V 2A SOD123FPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: Super Barrier Capacitance @ Vr, F: 75pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 21541 шт: термін постачання 21-31 дні (днів) |
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ZXMP10A17GQTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 2.4A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 74363 шт: термін постачання 21-31 дні (днів) |
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DMP3130LQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.5A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BAV199DWQ-7-F | Diodes Incorporated |
Description: DIODE ARRAY GP 85V 140MA SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 140mA (DC) Supplier Device Package: SOT-363 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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B340BQ-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 3A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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DMP3130LQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.5A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 31286 шт: термін постачання 21-31 дні (днів) |
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BAV199DWQ-7-F | Diodes Incorporated |
Description: DIODE ARRAY GP 85V 140MA SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 140mA (DC) Supplier Device Package: SOT-363 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30098 шт: термін постачання 21-31 дні (днів) |
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B340BQ-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 3A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 96208 шт: термін постачання 21-31 дні (днів) |
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DMP4010SK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 15A/50A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DMN6040SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 5A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 910000 шт: термін постачання 21-31 дні (днів) |
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DMP4010SK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 15A/50A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16374 шт: термін постачання 21-31 дні (днів) |
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DMN6040SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 5A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 911975 шт: термін постачання 21-31 дні (днів) |
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B340Q-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 3A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1109939 шт: термін постачання 21-31 дні (днів) |
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AP3125CMKTR-G1 | Diodes Incorporated |
Description: IC OFFLINE SWITCH FLYBACK SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: SOT-26 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 15.8 V Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DMC1015UPD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 9.5A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI5060-8 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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DMC1016UPD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 9.5A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DSS4160FDB-7 | Diodes Incorporated |
Description: TRANS NPH U-DFN2020-6Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 175MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DSS45160FDB-7 | Diodes Incorporated |
Description: TRANS NPN/PNP 60V U-DFN2020-6Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Frequency - Transition: 175MHz, 65MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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SBR20B100CT | Diodes Incorporated |
Description: DIODE ARR SBR 100V 10A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Current - Reverse Leakage @ Vr: 95 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBR30E100CT | Diodes Incorporated |
Description: DIODE SBR 100V 15A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDM05U20CSP-7 | Diodes Incorporated |
Description: DIODE SCHOT 20V 500MA X3WLB1006Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 46pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: X3-WLB1006-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Current - Reverse Leakage @ Vr: 55 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDM2U40CSP-7B | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2A X3WLB16082Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 85pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: X3-WLB1608-2 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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AP3125CMKTR-G1 | Diodes Incorporated |
Description: IC OFFLINE SWITCH FLYBACK SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: SOT-26 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 15.8 V Part Status: Active |
на замовлення 13432 шт: термін постачання 21-31 дні (днів) |
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DMC1015UPD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 9.5A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI5060-8 |
на замовлення 8159 шт: термін постачання 21-31 дні (днів) |
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DMC1016UPD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 9.5A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active |
на замовлення 2504 шт: термін постачання 21-31 дні (днів) |
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DSS4160FDB-7 | Diodes Incorporated |
Description: TRANS NPH U-DFN2020-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 175MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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DSS45160FDB-7 | Diodes Incorporated |
Description: TRANS NPN/PNP 60V U-DFN2020-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Frequency - Transition: 175MHz, 65MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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SDM05U20CSP-7 | Diodes Incorporated |
Description: DIODE SCHOT 20V 500MA X3WLB1006Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 46pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: X3-WLB1006-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Current - Reverse Leakage @ Vr: 55 µA @ 20 V |
на замовлення 722 шт: термін постачання 21-31 дні (днів) |
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SDM2U40CSP-7B | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2A X3WLB16082Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 85pF @ 5V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: X3-WLB1608-2 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
на замовлення 35702 шт: термін постачання 21-31 дні (днів) |
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PI90LV02TEX | Diodes Incorporated |
Description: IC RECEIVER 0/1 SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Receiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 0/1 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: SOT-23-5 Part Status: Last Time Buy |
на замовлення 1867 шт: термін постачання 21-31 дні (днів) |
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PI3USB42ZMEX | Diodes Incorporated |
Description: IC USB SWITCH HS 10UQFNPackaging: Cut Tape (CT) Features: Bi-Directional, USB 2.0 Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 5.5Ohm -3db Bandwidth: 770MHz Supplier Device Package: 10-UQFN (1.8x1.4) Voltage - Supply, Single (V+): 1.8V ~ 4.3V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 1 |
на замовлення 5719 шт: термін постачання 21-31 дні (днів) |
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PI3C3306UEX | Diodes Incorporated |
Description: IC BUS SWITCH 1 X 1:1 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-MSOP |
на замовлення 517145 шт: термін постачання 21-31 дні (днів) |
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PI3HDMI301FFE | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 80LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI7C9X2G303ELBZXE | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 136AQFNPackaging: Tray Package / Case: 136-VFQFN Dual Rows, Exposed Pad Mounting Type: Surface Mount Interface: JTAG Applications: Wireless Supplier Device Package: 136-aQFN (8x8) Part Status: Active |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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PI7C9X2G304SLBFDE | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 128LQFPPackaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: PCI Express Applications: Packet Switch, 3-Port/4-Lane Supplier Device Package: 128-LQFP (14x14) Part Status: Active |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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PI3HDMI412ADZBE | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 56TQFNPackaging: Tray Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 3V ~ 3.6V Applications: Video Supplier Device Package: 56-TQFN (8x8) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AL3050FDC-7 | Diodes Incorporated |
Description: IC LED DRVR RGLTR PWM 40MA 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Voltage - Output: 30V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 750kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 40mA Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: U-DFN2020-6 (Type S) Dimming: PWM Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52HC3V0WF-7 | Diodes Incorporated |
Description: DIODE ZENER 3V 375MW SOD123FPackaging: Tape & Reel (TR) Tolerance: ±6.67% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 375 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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BZT52HC5V1WF-7 | Diodes Incorporated |
Description: DIODE ZENER 5.1V 375MW SOD123FPackaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 375 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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BZT52HC15WF-7 | Diodes Incorporated |
Description: DIODE ZENER 15V 375MW SOD123FPackaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 375 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52HC18WF-7 | Diodes Incorporated |
Description: DIODE ZENER 18V 375MW SOD123FPackaging: Tape & Reel (TR) Tolerance: ±6.39% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 375 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 321000 шт: термін постачання 21-31 дні (днів) |
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BZT52HC4V3WF-7 | Diodes Incorporated |
Description: DIODE ZENER 4.3V 375MW SOD123FPackaging: Tape & Reel (TR) Tolerance: ±6.98% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 375 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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BZT52HC4V7WF-7 | Diodes Incorporated |
Description: DIODE ZENER 4.7V 375MW SOD123FPackaging: Tape & Reel (TR) Tolerance: ±6.38% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 78 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 375 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2049000 шт: термін постачання 21-31 дні (днів) |
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BZT52HC5V6WF-7 | Diodes Incorporated |
Description: DIODE ZENER 5.6V 375MW SOD123FPackaging: Tape & Reel (TR) Tolerance: ±7.14% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 375 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| D5V0M1U2LP3-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 120W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 120W
Power Line Protection: No
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.47 грн |
| DMG2302UK-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.31 грн |
| DMPH6050SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| DMT3006LDK-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMT6004SCT |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Description: MOSFET N-CH 60V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
на замовлення 139737 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 178.84 грн |
| 50+ | 84.88 грн |
| 100+ | 76.40 грн |
| 500+ | 57.74 грн |
| 1000+ | 53.25 грн |
| 2000+ | 49.48 грн |
| 5000+ | 48.26 грн |
| DRTR5V0U4LP16-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN1616-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN1616-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: Yes
Part Status: Active
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.88 грн |
| SBR2U100LP-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 100V 1.5A X1DFN14113
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SBR 100V 1.5A X1DFN14113
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SBR2U60S1F-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SBR 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.16 грн |
| 6000+ | 6.83 грн |
| 9000+ | 6.74 грн |
| 15000+ | 6.14 грн |
| 21000+ | 5.32 грн |
| D22V0S1U2WS-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 22VWM 37VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 220pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 37V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 22VWM 37VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 220pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 37V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
на замовлення 64018 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.53 грн |
| 20+ | 15.18 грн |
| 100+ | 10.23 грн |
| 500+ | 7.49 грн |
| 1000+ | 6.77 грн |
| D5V0M1U2LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 120W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 120W
Power Line Protection: No
Part Status: Active
на замовлення 13955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.20 грн |
| 44+ | 7.02 грн |
| 100+ | 3.02 грн |
| 500+ | 2.67 грн |
| 1000+ | 2.50 грн |
| 2000+ | 2.43 грн |
| 5000+ | 2.33 грн |
| DMG2302UK-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 2.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Qualification: AEC-Q101
на замовлення 3715 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.18 грн |
| 25+ | 12.54 грн |
| 100+ | 7.83 грн |
| 500+ | 5.43 грн |
| 1000+ | 4.81 грн |
| DMPH6050SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
на замовлення 377 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.52 грн |
| 10+ | 44.94 грн |
| 100+ | 29.39 грн |
| DMT3006LDK-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Description: MOSFET N-CH 30V 17.1A/46.2A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 46.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
на замовлення 2303 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.34 грн |
| 10+ | 31.72 грн |
| 100+ | 20.44 грн |
| 500+ | 14.61 грн |
| 1000+ | 13.14 грн |
| DMT3009LDT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
на замовлення 1662 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.76 грн |
| 10+ | 62.62 грн |
| 100+ | 41.55 грн |
| 500+ | 30.52 грн |
| 1000+ | 27.80 грн |
| DRTR5V0U4LP16-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN1616-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.5VWM 12V U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: U-DFN1616-6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: Yes
Part Status: Active
на замовлення 74150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.61 грн |
| 21+ | 14.50 грн |
| 100+ | 8.71 грн |
| 500+ | 7.58 грн |
| 1000+ | 6.08 грн |
| SBR2U100LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 100V 1.5A X1DFN14113
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SBR 100V 1.5A X1DFN14113
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 1.5A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
на замовлення 4318 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.02 грн |
| 16+ | 19.34 грн |
| 100+ | 17.78 грн |
| 500+ | 15.53 грн |
| 1000+ | 14.00 грн |
| SBR2U60S1F-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 60V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SBR 60V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: Super Barrier
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 21541 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.77 грн |
| 42+ | 7.25 грн |
| ZXMP10A17GQTA |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 2.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 2.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 74363 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.44 грн |
| 10+ | 72.13 грн |
| 100+ | 48.20 грн |
| 500+ | 35.59 грн |
| DMP3130LQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.96 грн |
| 6000+ | 8.27 грн |
| 9000+ | 7.61 грн |
| 15000+ | 7.00 грн |
| 21000+ | 6.82 грн |
| 30000+ | 6.57 грн |
| BAV199DWQ-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 85V 140MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.80 грн |
| 6000+ | 5.93 грн |
| 9000+ | 5.62 грн |
| 15000+ | 4.94 грн |
| 21000+ | 4.75 грн |
| 30000+ | 4.56 грн |
| B340BQ-13-F |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.82 грн |
| 6000+ | 6.34 грн |
| DMP3130LQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 77mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
на замовлення 31286 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.57 грн |
| 13+ | 25.08 грн |
| 100+ | 12.29 грн |
| 500+ | 11.05 грн |
| 1000+ | 9.89 грн |
| BAV199DWQ-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY GP 85V 140MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 85V 140MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30098 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.38 грн |
| 17+ | 18.51 грн |
| 100+ | 11.69 грн |
| 500+ | 8.19 грн |
| 1000+ | 7.29 грн |
| B340BQ-13-F |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 96208 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.98 грн |
| 39+ | 7.78 грн |
| DMP4010SK3Q-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 25.89 грн |
| 5000+ | 23.12 грн |
| 7500+ | 22.49 грн |
| DMN6040SSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 910000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 15.80 грн |
| 5000+ | 14.44 грн |
| 12500+ | 13.41 грн |
| 25000+ | 12.29 грн |
| DMP4010SK3Q-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 15A/50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16374 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.62 грн |
| 10+ | 60.43 грн |
| 100+ | 40.20 грн |
| 500+ | 29.58 грн |
| 1000+ | 26.96 грн |
| DMN6040SSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 911975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.06 грн |
| 10+ | 38.52 грн |
| 100+ | 26.81 грн |
| 500+ | 19.65 грн |
| 1000+ | 15.97 грн |
| B340Q-13-F |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1109939 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.81 грн |
| 16+ | 19.64 грн |
| 100+ | 16.02 грн |
| 500+ | 11.38 грн |
| 1000+ | 7.76 грн |
| AP3125CMKTR-G1 |
Виробник: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.11 грн |
| 6000+ | 12.42 грн |
| 9000+ | 11.83 грн |
| DMC1015UPD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.51 грн |
| 5000+ | 19.11 грн |
| 7500+ | 18.29 грн |
| DMC1016UPD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DSS4160FDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPH U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPH U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DSS45160FDB-7 |
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Виробник: Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.43 грн |
| 6000+ | 12.78 грн |
| 9000+ | 12.21 грн |
| 15000+ | 10.86 грн |
| 21000+ | 10.50 грн |
| 30000+ | 10.38 грн |
| SBR20B100CT |
Виробник: Diodes Incorporated
Description: DIODE ARR SBR 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
Description: DIODE ARR SBR 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| SBR30E100CT |
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Виробник: Diodes Incorporated
Description: DIODE SBR 100V 15A TO220AB
Description: DIODE SBR 100V 15A TO220AB
товару немає в наявності
В кошику
од. на суму грн.
| SDM05U20CSP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOT 20V 500MA X3WLB1006
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
Description: DIODE SCHOT 20V 500MA X3WLB1006
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| SDM2U40CSP-7B |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A X3WLB16082
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A X3WLB16082
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.81 грн |
| 20000+ | 4.55 грн |
| 30000+ | 4.41 грн |
| AP3125CMKTR-G1 |
Виробник: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: SOT-26
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15.8 V
Part Status: Active
на замовлення 13432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.32 грн |
| 10+ | 37.24 грн |
| 25+ | 30.85 грн |
| 100+ | 22.12 грн |
| 250+ | 18.75 грн |
| 500+ | 16.68 грн |
| 1000+ | 14.70 грн |
| DMC1015UPD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
на замовлення 8159 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.93 грн |
| 10+ | 50.53 грн |
| 100+ | 33.16 грн |
| 500+ | 24.13 грн |
| 1000+ | 21.88 грн |
| DMC1016UPD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
на замовлення 2504 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.58 грн |
| 10+ | 49.47 грн |
| 100+ | 32.57 грн |
| 500+ | 23.75 грн |
| 1000+ | 21.55 грн |
| DSS4160FDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPH U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPH U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
на замовлення 55 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.06 грн |
| 10+ | 38.98 грн |
| DSS45160FDB-7 |
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Виробник: Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.40 грн |
| 10+ | 35.88 грн |
| 100+ | 23.29 грн |
| 500+ | 16.77 грн |
| 1000+ | 15.13 грн |
| SDM05U20CSP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOT 20V 500MA X3WLB1006
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
Description: DIODE SCHOT 20V 500MA X3WLB1006
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: X3-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 55 µA @ 20 V
на замовлення 722 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.18 грн |
| 22+ | 13.82 грн |
| 100+ | 9.31 грн |
| 500+ | 6.74 грн |
| SDM2U40CSP-7B |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A X3WLB16082
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A X3WLB16082
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 5V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 35702 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.24 грн |
| 19+ | 16.54 грн |
| 100+ | 10.76 грн |
| 500+ | 7.54 грн |
| 1000+ | 6.52 грн |
| 2000+ | 6.02 грн |
| 5000+ | 5.17 грн |
| PI90LV02TEX |
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Виробник: Diodes Incorporated
Description: IC RECEIVER 0/1 SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Last Time Buy
Description: IC RECEIVER 0/1 SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: SOT-23-5
Part Status: Last Time Buy
на замовлення 1867 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.76 грн |
| 10+ | 88.37 грн |
| 25+ | 83.87 грн |
| 100+ | 64.66 грн |
| 250+ | 60.45 грн |
| 500+ | 53.42 грн |
| 1000+ | 41.48 грн |
| PI3USB42ZMEX |
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Виробник: Diodes Incorporated
Description: IC USB SWITCH HS 10UQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5.5Ohm
-3db Bandwidth: 770MHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 1.8V ~ 4.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Description: IC USB SWITCH HS 10UQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5.5Ohm
-3db Bandwidth: 770MHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 1.8V ~ 4.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
на замовлення 5719 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.97 грн |
| 10+ | 84.82 грн |
| 25+ | 71.33 грн |
| 100+ | 52.61 грн |
| 250+ | 45.56 грн |
| 500+ | 41.23 грн |
| 1000+ | 36.98 грн |
| PI3C3306UEX |
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Виробник: Diodes Incorporated
Description: IC BUS SWITCH 1 X 1:1 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-MSOP
Description: IC BUS SWITCH 1 X 1:1 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-MSOP
на замовлення 517145 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.91 грн |
| 10+ | 55.37 грн |
| 25+ | 46.14 грн |
| 100+ | 33.45 грн |
| 250+ | 28.62 грн |
| 500+ | 25.65 грн |
| 1000+ | 22.78 грн |
| PI3HDMI301FFE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 80LQFP
Description: IC INTERFACE SPECIALIZED 80LQFP
товару немає в наявності
В кошику
од. на суму грн.
| PI7C9X2G303ELBZXE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 136AQFN
Packaging: Tray
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: JTAG
Applications: Wireless
Supplier Device Package: 136-aQFN (8x8)
Part Status: Active
Description: IC INTERFACE SPECIALIZED 136AQFN
Packaging: Tray
Package / Case: 136-VFQFN Dual Rows, Exposed Pad
Mounting Type: Surface Mount
Interface: JTAG
Applications: Wireless
Supplier Device Package: 136-aQFN (8x8)
Part Status: Active
на замовлення 110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 713.01 грн |
| 10+ | 620.21 грн |
| 25+ | 591.34 грн |
| 80+ | 481.87 грн |
| PI7C9X2G304SLBFDE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 3-Port/4-Lane
Supplier Device Package: 128-LQFP (14x14)
Part Status: Active
Description: IC INTERFACE SPECIALIZED 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 3-Port/4-Lane
Supplier Device Package: 128-LQFP (14x14)
Part Status: Active
на замовлення 55 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 651.83 грн |
| 10+ | 488.93 грн |
| PI3HDMI412ADZBE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 56TQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V
Applications: Video
Supplier Device Package: 56-TQFN (8x8)
Description: IC INTERFACE SPECIALIZED 56TQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V
Applications: Video
Supplier Device Package: 56-TQFN (8x8)
товару немає в наявності
В кошику
од. на суму грн.
| AL3050FDC-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 40MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 30V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 750kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type S)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR RGLTR PWM 40MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 30V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 750kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type S)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
товару немає в наявності
В кошику
од. на суму грн.
| BZT52HC3V0WF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 3V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±6.67%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±6.67%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.17 грн |
| 6000+ | 2.02 грн |
| 9000+ | 1.66 грн |
| BZT52HC5V1WF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 5.1V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.85 грн |
| 6000+ | 4.20 грн |
| 9000+ | 3.97 грн |
| 15000+ | 3.47 грн |
| 21000+ | 3.33 грн |
| BZT52HC15WF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 15V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 15V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZT52HC18WF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 18V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±6.39%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 18V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±6.39%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 321000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.00 грн |
| 6000+ | 1.79 грн |
| 9000+ | 1.59 грн |
| BZT52HC4V3WF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 4.3V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±6.98%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±6.98%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.03 грн |
| 6000+ | 1.78 грн |
| 9000+ | 1.66 грн |
| BZT52HC4V7WF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 4.7V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±6.38%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.7V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±6.38%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2049000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.46 грн |
| 6000+ | 2.16 грн |
| 9000+ | 1.95 грн |
| 15000+ | 1.67 грн |
| 21000+ | 1.64 грн |
| 300000+ | 1.56 грн |
| BZT52HC5V6WF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 5.6V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 375MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±7.14%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.38 грн |



























