Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74588) > Сторінка 338 з 1244
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMT6010LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14A 8SO T&R 2Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMT69M8LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DMTH3004LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 21A/75A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DMTH4004SCTB-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 100A TO263AB T&RPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V |
на замовлення 5600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMTH4004SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 100A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V Power Dissipation (Max): 3.9W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMTH4007SPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 14.2A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14.2A Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMTH6005LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
PDR5KF-13 | Diodes Incorporated |
Description: DIODE FAST 800V 5A POWERDI5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SBR10B45P5-13 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 380 µA @ 45 V |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
SBR10B45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 380 µA @ 45 V |
на замовлення 94500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
SBR30E45CTB | Diodes Incorporated |
Description: DIODE ARRAY SBR 45V 15A TO263AB |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
|
DMG4N60SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 600V 3.7A TO252 T&RPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Power Dissipation (Max): 48W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DMN1250UFEL-7 | Diodes Incorporated |
Description: MOSFET 8N-CH 12V 2A U-QFN1515Packaging: Cut Tape (CT) Package / Case: 12-UFQFN Exposed Pad Mounting Type: Surface Mount Configuration: 8 N-Channel, Common Gate, Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 660mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-QFN1515-12 Part Status: Active |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMT3004LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 21A PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMT6007LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 15A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 13461 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMT6009LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10.8A 8SO T&R 2Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V |
на замовлення 12006 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMT6010LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14A 8SO T&R 2Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V |
на замовлення 9322 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMT69M8LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2 |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
|
DMTH4004SCTB-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 100A TO263AB T&RPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V |
на замовлення 6385 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMTH4004SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 100A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V Power Dissipation (Max): 3.9W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMTH4007SPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 14.2A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14.2A Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active |
на замовлення 24268 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMTH6005LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V |
на замовлення 4896 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
PDR5KF-13 | Diodes Incorporated |
Description: DIODE FAST 800V 5A POWERDI5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SBR10B45P5-13 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 380 µA @ 45 V |
на замовлення 85110 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
SBR10B45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 380 µA @ 45 V |
на замовлення 94806 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DMT69M8LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2 |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
|
PDR5KF-13 | Diodes Incorporated |
Description: DIODE FAST 800V 5A POWERDI5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SBR10B45P5-7D | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SBR30E45CTB-13 | Diodes Incorporated |
Description: DIODE SBR 45V 10A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
AP65352SP-13 | Diodes Incorporated |
Description: IC REG BUCK ADJUSTABLE 3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 650kHz Voltage - Input (Max): 18V Topology: Buck Supplier Device Package: 8-SO-EP Synchronous Rectifier: Yes Voltage - Output (Max): 6V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.765V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
AP65454SP-13 | Diodes Incorporated |
Description: IC REG BUCK ADJ 4A SO-8EP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
AP65454SP-13 | Diodes Incorporated |
Description: IC REG BUCK ADJ 4A SO-8EP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
PI7C9X2G404SLBFDE | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 128LQFPPackaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: PCI Express Applications: Packet Switch, 4-Port/4-Lane Supplier Device Package: 128-LQFP (14x14) Part Status: Active |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
BAV116S92-7 | Diodes Incorporated |
Description: DIODE STANDARD 85V 215MA SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BAV116S92-7 | Diodes Incorporated |
Description: DIODE STANDARD 85V 215MA SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DMC3028LSDXQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 16976 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
AP7343D-12FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 1.2V X2-DFN10104Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.58V @ 300mA Protection Features: Over Current |
на замовлення 9648 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
AP7343D-27FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 2.7V 300MA 4DFNPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 2.7V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.3V @ 300mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
AP7343D-28FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 2.8V X2-DFN10104Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.3V @ 300mA Protection Features: Over Current |
на замовлення 114082 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
AP7343D-18FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 1.8V X2-DFN10104Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.39V @ 300mA Protection Features: Over Current |
на замовлення 10875 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
AP7343D-33FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 3.3V X2-DFN10104Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.29V @ 300mA Protection Features: Over Current |
на замовлення 869976 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
AP7343D-105FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 1.05V 300MA 4DFNPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 1.05V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.7V @ 300mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
AP7343D-295FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 2.95V 300MA 4DFNPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 2.95V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.3V @ 300mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
AP7343D-30FS4-7B | Diodes Incorporated |
Description: IC REG LIN 3V 300MA X2-DFN10104Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 3V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.29V @ 300mA Protection Features: Over Current |
на замовлення 459925 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
AP7343D-15FS4-7B | Diodes Incorporated |
Description: IC REG LINEAR 1.5V X2-DFN10104Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.25V Number of Regulators: 1 Supplier Device Package: X2-DFN1010-4 Voltage - Output (Min/Fixed): 1.5V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.44V @ 300mA Protection Features: Over Current |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
BAV16S92-7 | Diodes Incorporated |
Description: DIODE STANDARD 75V 150MA SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 3060000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
BAV16S92-7 | Diodes Incorporated |
Description: DIODE STANDARD 75V 150MA SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 3064047 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
BSS123WQ-7-F | Diodes Incorporated |
Description: MOSFET N-CH 100V 170MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 234000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
BSS123WQ-7-F | Diodes Incorporated |
Description: MOSFET N-CH 100V 170MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 234565 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DGD2101S8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SO |
на замовлення 250030000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
|
DGD2103AS8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DGD2104AS8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SO Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 210mA, 360mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DGD2181S8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SO Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Not For New Designs DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DGD2184S8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SO Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 62500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DGD2190S8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SO Rise / Fall Time (Typ): 25ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4.5A, 4.5A Part Status: Not For New Designs DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DGD2101S8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SO |
на замовлення 250030000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
|
DGD2103AS8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DGD2104AS8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SO Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 210mA, 360mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
DGD2181S8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SO Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Not For New Designs DigiKey Programmable: Not Verified |
на замовлення 1902 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
DGD2184S8-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SO Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 62500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| DMT6010LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 36.70 грн |
| 5000+ | 33.51 грн |
| DMT69M8LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
товару немає в наявності
В кошику
од. на суму грн.
| DMTH3004LK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 21A/75A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Description: MOSFET N-CH 30V 21A/75A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMTH4004SCTB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 44.63 грн |
| DMTH4004SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 52.17 грн |
| 5000+ | 48.35 грн |
| DMTH4007SPD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 36.83 грн |
| DMTH6005LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 41.97 грн |
| PDR5KF-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE FAST 800V 5A POWERDI5
Description: DIODE FAST 800V 5A POWERDI5
товару немає в наявності
В кошику
од. на суму грн.
| SBR10B45P5-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 10.88 грн |
| 10000+ | 10.30 грн |
| 15000+ | 9.90 грн |
| SBR10B45P5-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
на замовлення 94500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 13.59 грн |
| 3000+ | 11.70 грн |
| 7500+ | 11.10 грн |
| 10500+ | 9.68 грн |
| 37500+ | 9.49 грн |
| SBR30E45CTB |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO263AB
Description: DIODE ARRAY SBR 45V 15A TO263AB
на замовлення 43 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMG4N60SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 600V 3.7A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 48W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
Description: MOSFET N-CH 600V 3.7A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 48W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| DMN1250UFEL-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.06 грн |
| 10+ | 64.21 грн |
| 100+ | 42.53 грн |
| 500+ | 31.19 грн |
| 1000+ | 28.38 грн |
| DMT3004LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Description: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.59 грн |
| 10+ | 63.18 грн |
| 100+ | 41.98 грн |
| 500+ | 30.87 грн |
| 1000+ | 28.12 грн |
| DMT6007LFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 13461 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.71 грн |
| 10+ | 52.49 грн |
| 100+ | 42.19 грн |
| 500+ | 35.59 грн |
| 1000+ | 33.56 грн |
| DMT6009LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
на замовлення 12006 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.06 грн |
| 10+ | 54.23 грн |
| 100+ | 39.00 грн |
| 500+ | 32.17 грн |
| 1000+ | 29.36 грн |
| DMT6010LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
на замовлення 9322 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.55 грн |
| 10+ | 71.41 грн |
| 100+ | 50.01 грн |
| 500+ | 41.27 грн |
| 1000+ | 38.50 грн |
| DMT69M8LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMTH4004SCTB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
на замовлення 6385 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.30 грн |
| 10+ | 95.80 грн |
| 100+ | 65.73 грн |
| DMTH4004SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.21 грн |
| DMTH4007SPD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
на замовлення 24268 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.95 грн |
| 10+ | 84.63 грн |
| 100+ | 55.38 грн |
| 500+ | 41.22 грн |
| 1000+ | 37.87 грн |
| DMTH6005LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
на замовлення 4896 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.35 грн |
| 10+ | 81.63 грн |
| 100+ | 57.28 грн |
| 500+ | 45.50 грн |
| 1000+ | 41.73 грн |
| PDR5KF-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE FAST 800V 5A POWERDI5
Description: DIODE FAST 800V 5A POWERDI5
товару немає в наявності
В кошику
од. на суму грн.
| SBR10B45P5-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
на замовлення 85110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.93 грн |
| 12+ | 26.76 грн |
| 100+ | 21.80 грн |
| 500+ | 15.34 грн |
| 1000+ | 12.43 грн |
| 2000+ | 12.32 грн |
| SBR10B45P5-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
на замовлення 94806 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.18 грн |
| 11+ | 29.69 грн |
| 100+ | 20.62 грн |
| 500+ | 15.11 грн |
| DMT69M8LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PDR5KF-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE FAST 800V 5A POWERDI5
Description: DIODE FAST 800V 5A POWERDI5
товару немає в наявності
В кошику
од. на суму грн.
| SBR10B45P5-7D |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Description: DIODE SBR 45V 10A POWERDI5
товару немає в наявності
В кошику
од. на суму грн.
| SBR30E45CTB-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A TO263AB
Description: DIODE SBR 45V 10A TO263AB
товару немає в наявності
В кошику
од. на суму грн.
| AP65352SP-13 |
Виробник: Diodes Incorporated
Description: IC REG BUCK ADJUSTABLE 3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 650kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.765V
Description: IC REG BUCK ADJUSTABLE 3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 650kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.765V
товару немає в наявності
В кошику
од. на суму грн.
| AP65454SP-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG BUCK ADJ 4A SO-8EP
Description: IC REG BUCK ADJ 4A SO-8EP
товару немає в наявності
В кошику
од. на суму грн.
| AP65454SP-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG BUCK ADJ 4A SO-8EP
Description: IC REG BUCK ADJ 4A SO-8EP
товару немає в наявності
В кошику
од. на суму грн.
| PI7C9X2G404SLBFDE |
![]() |
Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 128-LQFP (14x14)
Part Status: Active
Description: IC INTERFACE SPECIALIZED 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 128-LQFP (14x14)
Part Status: Active
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 897.80 грн |
| 10+ | 680.08 грн |
| BAV116S92-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 85V 215MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE STANDARD 85V 215MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| BAV116S92-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 85V 215MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE STANDARD 85V 215MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| DMC3028LSDXQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 16976 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.26 грн |
| 10+ | 45.76 грн |
| 100+ | 31.68 грн |
| 500+ | 23.93 грн |
| 1000+ | 21.70 грн |
| AP7343D-12FS4-7B |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.2V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.58V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 1.2V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.58V @ 300mA
Protection Features: Over Current
на замовлення 9648 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.84 грн |
| 10+ | 35.31 грн |
| 25+ | 29.14 грн |
| 100+ | 20.80 грн |
| 250+ | 17.58 грн |
| 500+ | 15.60 грн |
| 1000+ | 13.71 грн |
| 2500+ | 11.95 грн |
| 5000+ | 10.87 грн |
| AP7343D-27FS4-7B |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.7V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 2.7V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| AP7343D-28FS4-7B |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.8V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 2.8V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
на замовлення 114082 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.95 грн |
| 10+ | 37.76 грн |
| 25+ | 31.23 грн |
| 100+ | 22.32 грн |
| 250+ | 18.90 грн |
| 500+ | 16.79 грн |
| 1000+ | 14.77 грн |
| 2500+ | 12.90 грн |
| 5000+ | 11.75 грн |
| AP7343D-18FS4-7B |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.8V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.39V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 1.8V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.39V @ 300mA
Protection Features: Over Current
на замовлення 10875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.95 грн |
| 10+ | 37.76 грн |
| 25+ | 31.23 грн |
| 100+ | 22.32 грн |
| 250+ | 18.90 грн |
| 500+ | 16.79 грн |
| 1000+ | 14.77 грн |
| 2500+ | 12.90 грн |
| 5000+ | 11.75 грн |
| AP7343D-33FS4-7B |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 3.3V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 3.3V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current
на замовлення 869976 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.95 грн |
| 10+ | 37.76 грн |
| 25+ | 31.23 грн |
| 100+ | 22.32 грн |
| 250+ | 18.90 грн |
| 500+ | 16.79 грн |
| 1000+ | 14.77 грн |
| 2500+ | 12.90 грн |
| 5000+ | 11.75 грн |
| AP7343D-105FS4-7B |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.05V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 1.05V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| AP7343D-295FS4-7B |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.95V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 2.95V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| AP7343D-30FS4-7B |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LIN 3V 300MA X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current
Description: IC REG LIN 3V 300MA X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current
на замовлення 459925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.84 грн |
| 10+ | 35.31 грн |
| 25+ | 29.14 грн |
| 100+ | 20.80 грн |
| 250+ | 17.58 грн |
| 500+ | 15.60 грн |
| 1000+ | 13.71 грн |
| 2500+ | 11.95 грн |
| 5000+ | 10.87 грн |
| AP7343D-15FS4-7B |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.5V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.44V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 1.5V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.44V @ 300mA
Protection Features: Over Current
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.84 грн |
| 10+ | 35.31 грн |
| 25+ | 29.14 грн |
| 100+ | 20.80 грн |
| 250+ | 17.58 грн |
| 500+ | 15.60 грн |
| 1000+ | 13.71 грн |
| 2500+ | 11.95 грн |
| 5000+ | 10.87 грн |
| BAV16S92-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 150MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 75V 150MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 3060000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.07 грн |
| 20000+ | 1.75 грн |
| 30000+ | 1.69 грн |
| BAV16S92-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 150MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 75V 150MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 3064047 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.69 грн |
| 46+ | 6.97 грн |
| 100+ | 5.46 грн |
| 500+ | 3.60 грн |
| 1000+ | 3.15 грн |
| 2000+ | 3.04 грн |
| 5000+ | 2.59 грн |
| BSS123WQ-7-F |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 170MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 170MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 234000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.17 грн |
| 6000+ | 2.84 грн |
| 9000+ | 2.63 грн |
| 15000+ | 2.27 грн |
| 21000+ | 2.11 грн |
| 30000+ | 2.10 грн |
| BSS123WQ-7-F |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 170MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 170MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 234565 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 19.73 грн |
| 28+ | 11.40 грн |
| 100+ | 4.92 грн |
| 500+ | 4.35 грн |
| DGD2101S8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Description: IC GATE DRVR HALF-BRIDGE 8SO
на замовлення 250030000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DGD2103AS8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Description: IC GATE DRVR HALF-BRIDGE 8SO
товару немає в наявності
В кошику
од. на суму грн.
| DGD2104AS8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| DGD2181S8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| DGD2184S8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 62500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 52.60 грн |
| 5000+ | 48.12 грн |
| 12500+ | 46.31 грн |
| DGD2190S8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| DGD2101S8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Description: IC GATE DRVR HALF-BRIDGE 8SO
на замовлення 250030000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DGD2103AS8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Description: IC GATE DRVR HALF-BRIDGE 8SO
товару немає в наявності
В кошику
од. на суму грн.
| DGD2104AS8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| DGD2181S8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1902 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 184.17 грн |
| 10+ | 111.16 грн |
| 25+ | 93.87 грн |
| 100+ | 69.71 грн |
| 250+ | 60.67 грн |
| 500+ | 55.12 грн |
| 1000+ | 49.64 грн |
| DGD2184S8-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 62500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.




















