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DMC1030UFDBQ-7 DMC1030UFDBQ-7 Diodes Incorporated DMC1030UFDBQ_Rev2-3_Aug2022.pdf Description: MOSFET N/P-CH 12V 5.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
3000+15.10 грн
6000+13.37 грн
9000+12.77 грн
15000+11.35 грн
21000+11.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMC4050SSDQ-13 DMC4050SSDQ-13 Diodes Incorporated DMC4050SSDQ_Web.pdf Description: MOSFET N/P-CH 40V 5.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+23.45 грн
5000+22.24 грн
7500+22.20 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMG1012TQ-7 DMG1012TQ-7 Diodes Incorporated DMG1012T.pdf Description: MOSFET N-CH 20V 630MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3717000 шт:
термін постачання 21-31 дні (днів)
3000+2.28 грн
6000+2.11 грн
9000+2.05 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMG1026UVQ-7 Diodes Incorporated Description: MOSFET 2 N-CH 60V 440MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
DMG2301LK-13 DMG2301LK-13 Diodes Incorporated DMG2301LK.pdf Description: MOSFET P-CH 20V 2.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMMT3906WQ-7-F DMMT3906WQ-7-F Diodes Incorporated ds30312.pdf Description: TRANS 2PNP 40V 200MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6189000 шт:
термін постачання 21-31 дні (днів)
3000+9.87 грн
6000+8.67 грн
9000+8.24 грн
15000+7.28 грн
21000+7.02 грн
30000+6.76 грн
75000+6.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN3008SFGQ-13 DMN3008SFGQ-13 Diodes Incorporated DMN3008SFGQ.pdf Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 13.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+22.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN3008SFGQ-7 DMN3008SFGQ-7 Diodes Incorporated DMN3008SFGQ.pdf Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 13.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V
Qualification: AEC-Q101
на замовлення 258000 шт:
термін постачання 21-31 дні (днів)
2000+23.43 грн
4000+20.99 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMN6013LFGQ-13 DMN6013LFGQ-13 Diodes Incorporated DMN6013LFGQ.pdf Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
3000+25.28 грн
6000+23.06 грн
9000+21.35 грн
30000+19.84 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN6013LFGQ-7 DMN6013LFGQ-7 Diodes Incorporated DMN6013LFGQ.pdf Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
2000+25.28 грн
6000+23.06 грн
10000+21.35 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMN601WKQ-13 DMN601WKQ-13 Diodes Incorporated DMN601WKQ.pdf Description: MOSFET N-CH 60V SOT323
товару немає в наявності
В кошику  од. на суму  грн.
DMN6040SVTQ-13 DMN6040SVTQ-13 Diodes Incorporated DMN6040SVTQ.pdf Description: MOSFET N-CH 60V 5A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
DMNH4006SPSQ-13 DMNH4006SPSQ-13 Diodes Incorporated DMNH4006SPSQ.pdf Description: MOSFET N-CH 40V 110A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
DMNH4011SPS-13 DMNH4011SPS-13 Diodes Incorporated DMNH4011SPS.pdf Description: MOSFET NCH 40V 13A POWERDI
товару немає в наявності
В кошику  од. на суму  грн.
DMNH4011SPSQ-13 DMNH4011SPSQ-13 Diodes Incorporated DMNH4011SPSQ.pdf Description: MOSFET N-CH 40V PWRDI5060
товару немає в наявності
В кошику  од. на суму  грн.
DMP4013LFGQ-7 DMP4013LFGQ-7 Diodes Incorporated DMP4013LFGQ.pdf Description: MOSFET P-CH 40V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+23.80 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMP6185SE-13 DMP6185SE-13 Diodes Incorporated DMP6185SE.pdf Description: MOSFET P-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 30 V
Qualification: AEC-Q101
на замовлення 824300 шт:
термін постачання 21-31 дні (днів)
2500+11.04 грн
5000+9.80 грн
7500+9.38 грн
12500+8.40 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMP6185SE-7 DMP6185SE-7 Diodes Incorporated DMP6185SE.pdf Description: MOSFET P-CH 60V 3A SOT223
товару немає в наявності
В кошику  од. на суму  грн.
DMT2004UFDF-13 DMT2004UFDF-13 Diodes Incorporated DMT2004UFDF.pdf Description: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMT2004UFDF-7 DMT2004UFDF-7 Diodes Incorporated DMT2004UFDF.pdf Description: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+14.04 грн
6000+13.34 грн
9000+13.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMT3003LFG-13 DMT3003LFG-13 Diodes Incorporated DMT3003LFG.pdf Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+19.45 грн
6000+17.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMT3004LFG-13 DMT3004LFG-13 Diodes Incorporated DMT3004LFG.pdf Description: MOSFET NCH 30V 10.4A POWERDI
товару немає в наявності
В кошику  од. на суму  грн.
DMT3004LFG-7 DMT3004LFG-7 Diodes Incorporated DMT3004LFG.pdf Description: MOSFET NCH 30V 10.4A POWERDI
товару немає в наявності
В кошику  од. на суму  грн.
DMT3006LFDF-7 DMT3006LFDF-7 Diodes Incorporated DMT3006LFDF.pdf Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Tape & Box (TB)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
3000+11.39 грн
6000+10.49 грн
9000+10.28 грн
15000+9.46 грн
21000+9.14 грн
30000+9.11 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMT3020LFDF-13 DMT3020LFDF-13 Diodes Incorporated DMT3020LFDF.pdf Description: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+14.19 грн
20000+12.97 грн
Мінімальне замовлення: 10000
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DMT6005LCT DMT6005LCT Diodes Incorporated DMT6005LCT.pdf Description: MOSFET N-CH 60V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
50+90.71 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
DMTH4004LK3-13 DMTH4004LK3-13 Diodes Incorporated DMTH4004LK3.pdf Description: MOSFET N-CH 40V 100A TO252-4L
товару немає в наявності
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DMTH4004LK3Q-13 DMTH4004LK3Q-13 Diodes Incorporated DMTH4004LK3Q.pdf Description: MOSFET N-CH 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+46.68 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH4005SK3Q-13 DMTH4005SK3Q-13 Diodes Incorporated DMTH4005SK3Q.pdf Description: MOSFET N-CH 40V 95A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 230000 шт:
термін постачання 21-31 дні (днів)
2500+23.00 грн
5000+21.73 грн
7500+21.35 грн
12500+20.02 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH8012LK3Q-13 DMTH8012LK3Q-13 Diodes Incorporated DMTH8012LK3Q.pdf Description: MOSFET N-CH 80V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Qualification: AEC-Q101
на замовлення 125000 шт:
термін постачання 21-31 дні (днів)
2500+33.02 грн
5000+31.27 грн
7500+31.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH8012LPSQ-13 DMTH8012LPSQ-13 Diodes Incorporated DMTH8012LPSQ.pdf Description: MOSFET N-CH 80V 10A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Qualification: AEC-Q101
на замовлення 127500 шт:
термін постачання 21-31 дні (днів)
2500+27.96 грн
5000+24.94 грн
7500+24.01 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DPD13AWF-7 DPD13AWF-7 Diodes Incorporated Description: TVS DIODE 13V 21.5V SOD123F
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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DZTA42Q-13 DZTA42Q-13 Diodes Incorporated DZTA42Q.pdf Description: TRANS NPN 300V 500MA SOT223
товару немає в наявності
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LM2901QT14-13 LM2901QT14-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR QUAD DIFF TSSOP-14
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+15.36 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
LM2903QS-13 LM2903QS-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 2 DIFF 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SO
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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LM2904QS-13 LM2904QS-13 Diodes Incorporated LM2902Q-04Q.pdf Description: IC OPAMP GP 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 700µA (x2 Channels)
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+4.76 грн
5000+4.43 грн
7500+4.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
LM4040B30QFTA LM4040B30QFTA Diodes Incorporated Description: IC VREF SHUNT 0.2% SOT23
товару немає в наявності
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MBR10100CD-E1 MBR10100CD-E1 Diodes Incorporated MBR10100C.pdf Description: DIODE ARR SCHOTT 100V 5A TO2523
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CD-G1 MBR10100CD-G1 Diodes Incorporated MBR10100C_Rev2018.pdf Description: DIODE ARR SCHOTT 100V 5A TO2523
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CDTR-E1 MBR10100CDTR-E1 Diodes Incorporated MBR10100C_Rev2018.pdf Description: DIODE ARR SCHOTT 100V 5A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CDTR-G1 MBR10100CDTR-G1 Diodes Incorporated MBR10100C_Rev2018.pdf Description: DIODE ARR SCHOTT 100V 5A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBR10100CS2-E1 MBR10100CS2-E1 Diodes Incorporated MBR10100C.pdf Description: DIODE ARRAY SCHOT 100V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBR10100CS2-G1 MBR10100CS2-G1 Diodes Incorporated MBR10100C_Rev2018.pdf Description: DIODE ARRAY SCHOT 100V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBR10100CS2TR-E1 MBR10100CS2TR-E1 Diodes Incorporated MBR10100C.pdf Description: DIODE ARRAY SCHOT 100V 5A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CS2TR-G1 MBR10100CS2TR-G1 Diodes Incorporated MBR10100C_Rev2018.pdf Description: DIODE ARRAY SCHOT 100V 5A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBR10100CTF-G1 MBR10100CTF-G1 Diodes Incorporated MBR10100C.pdf Description: DIODE ARR SCHOT 100V 5A TO220F3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBR10150CT-E1 MBR10150CT-E1 Diodes Incorporated MBR10150C.pdf Description: DIODE ARR SCHOTT 150V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
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MBR10150CTF-E1 MBR10150CTF-E1 Diodes Incorporated MBR10150C.pdf Description: DIODE ARR SCHOT 150V 5A TO220F3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10150CTF-G1 MBR10150CTF-G1 Diodes Incorporated MBR10150C.pdf Description: DIODE ARR SCHOT 150V 5A TO220F3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
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MBR10200CD-E1 MBR10200CD-E1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARR SCHOTT 200V 5A TO2523
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
товару немає в наявності
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MBR10200CD-G1 MBR10200CD-G1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARR SCHOTT 200V 5A TO2523
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
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MBR10200CDTR-E1 MBR10200CDTR-E1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARR SCHOTT 200V 5A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
товару немає в наявності
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MBR10200CDTR-G1 MBR10200CDTR-G1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARR SCHOTT 200V 5A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
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MBR10200CS2-E1 MBR10200CS2-E1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10200CS2-G1 MBR10200CS2-G1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10200CS2TR-E1 MBR10200CS2TR-E1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10200CS2TR-G1 MBR10200CS2TR-G1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
товару немає в наявності
В кошику  од. на суму  грн.
MBR10200CT-E1 MBR10200CT-E1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARR SCHOTT 200V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10200CTF-E1 MBR10200CTF-E1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARR SCHOT 200V 5A TO220F3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
товару немає в наявності
В кошику  од. на суму  грн.
MBR10200CTF-G1 MBR10200CTF-G1 Diodes Incorporated MBR10200C.pdf Description: DIODE ARR SCHOT 200V 5A TO220F3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
7+50.02 грн
50+24.56 грн
100+21.96 грн
500+15.41 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DMC1030UFDBQ-7 DMC1030UFDBQ_Rev2-3_Aug2022.pdf
DMC1030UFDBQ-7
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+15.10 грн
6000+13.37 грн
9000+12.77 грн
15000+11.35 грн
21000+11.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMC4050SSDQ-13 DMC4050SSDQ_Web.pdf
DMC4050SSDQ-13
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 40V 5.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+23.45 грн
5000+22.24 грн
7500+22.20 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMG1012TQ-7 DMG1012T.pdf
DMG1012TQ-7
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 630MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3717000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.28 грн
6000+2.11 грн
9000+2.05 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMG1026UVQ-7
Виробник: Diodes Incorporated
Description: MOSFET 2 N-CH 60V 440MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
DMG2301LK-13 DMG2301LK.pdf
DMG2301LK-13
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 2.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMMT3906WQ-7-F ds30312.pdf
DMMT3906WQ-7-F
Виробник: Diodes Incorporated
Description: TRANS 2PNP 40V 200MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6189000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.87 грн
6000+8.67 грн
9000+8.24 грн
15000+7.28 грн
21000+7.02 грн
30000+6.76 грн
75000+6.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN3008SFGQ-13 DMN3008SFGQ.pdf
DMN3008SFGQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 13.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+22.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN3008SFGQ-7 DMN3008SFGQ.pdf
DMN3008SFGQ-7
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 13.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V
Qualification: AEC-Q101
на замовлення 258000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+23.43 грн
4000+20.99 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMN6013LFGQ-13 DMN6013LFGQ.pdf
DMN6013LFGQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+25.28 грн
6000+23.06 грн
9000+21.35 грн
30000+19.84 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN6013LFGQ-7 DMN6013LFGQ.pdf
DMN6013LFGQ-7
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+25.28 грн
6000+23.06 грн
10000+21.35 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMN601WKQ-13 DMN601WKQ.pdf
DMN601WKQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V SOT323
товару немає в наявності
В кошику  од. на суму  грн.
DMN6040SVTQ-13 DMN6040SVTQ.pdf
DMN6040SVTQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 5A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
DMNH4006SPSQ-13 DMNH4006SPSQ.pdf
DMNH4006SPSQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 110A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
DMNH4011SPS-13 DMNH4011SPS.pdf
DMNH4011SPS-13
Виробник: Diodes Incorporated
Description: MOSFET NCH 40V 13A POWERDI
товару немає в наявності
В кошику  од. на суму  грн.
DMNH4011SPSQ-13 DMNH4011SPSQ.pdf
DMNH4011SPSQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
товару немає в наявності
В кошику  од. на суму  грн.
DMP4013LFGQ-7 DMP4013LFGQ.pdf
DMP4013LFGQ-7
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+23.80 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMP6185SE-13 DMP6185SE.pdf
DMP6185SE-13
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 30 V
Qualification: AEC-Q101
на замовлення 824300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+11.04 грн
5000+9.80 грн
7500+9.38 грн
12500+8.40 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMP6185SE-7 DMP6185SE.pdf
DMP6185SE-7
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 3A SOT223
товару немає в наявності
В кошику  од. на суму  грн.
DMT2004UFDF-13 DMT2004UFDF.pdf
DMT2004UFDF-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMT2004UFDF-7 DMT2004UFDF.pdf
DMT2004UFDF-7
Виробник: Diodes Incorporated
Description: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.04 грн
6000+13.34 грн
9000+13.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMT3003LFG-13 DMT3003LFG.pdf
DMT3003LFG-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+19.45 грн
6000+17.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMT3004LFG-13 DMT3004LFG.pdf
DMT3004LFG-13
Виробник: Diodes Incorporated
Description: MOSFET NCH 30V 10.4A POWERDI
товару немає в наявності
В кошику  од. на суму  грн.
DMT3004LFG-7 DMT3004LFG.pdf
DMT3004LFG-7
Виробник: Diodes Incorporated
Description: MOSFET NCH 30V 10.4A POWERDI
товару немає в наявності
В кошику  од. на суму  грн.
DMT3006LFDF-7 DMT3006LFDF.pdf
DMT3006LFDF-7
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 14.1A 6UDFN
Packaging: Tape & Box (TB)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.39 грн
6000+10.49 грн
9000+10.28 грн
15000+9.46 грн
21000+9.14 грн
30000+9.11 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMT3020LFDF-13 DMT3020LFDF.pdf
DMT3020LFDF-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+14.19 грн
20000+12.97 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
DMT6005LCT DMT6005LCT.pdf
DMT6005LCT
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+90.71 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
DMTH4004LK3-13 DMTH4004LK3.pdf
DMTH4004LK3-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252-4L
товару немає в наявності
В кошику  од. на суму  грн.
DMTH4004LK3Q-13 DMTH4004LK3Q.pdf
DMTH4004LK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+46.68 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH4005SK3Q-13 DMTH4005SK3Q.pdf
DMTH4005SK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 95A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 230000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+23.00 грн
5000+21.73 грн
7500+21.35 грн
12500+20.02 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH8012LK3Q-13 DMTH8012LK3Q.pdf
DMTH8012LK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Qualification: AEC-Q101
на замовлення 125000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+33.02 грн
5000+31.27 грн
7500+31.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH8012LPSQ-13 DMTH8012LPSQ.pdf
DMTH8012LPSQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 10A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2051 pF @ 40 V
Qualification: AEC-Q101
на замовлення 127500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+27.96 грн
5000+24.94 грн
7500+24.01 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DPD13AWF-7
DPD13AWF-7
Виробник: Diodes Incorporated
Description: TVS DIODE 13V 21.5V SOD123F
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
DZTA42Q-13 DZTA42Q.pdf
DZTA42Q-13
Виробник: Diodes Incorporated
Description: TRANS NPN 300V 500MA SOT223
товару немає в наявності
В кошику  од. на суму  грн.
LM2901QT14-13 LM2901Q_03Q.pdf
LM2901QT14-13
Виробник: Diodes Incorporated
Description: IC COMPARATOR QUAD DIFF TSSOP-14
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+15.36 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
LM2903QS-13 LM2901Q_03Q.pdf
LM2903QS-13
Виробник: Diodes Incorporated
Description: IC COMPARATOR 2 DIFF 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SO
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
LM2904QS-13 LM2902Q-04Q.pdf
LM2904QS-13
Виробник: Diodes Incorporated
Description: IC OPAMP GP 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 700µA (x2 Channels)
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+4.76 грн
5000+4.43 грн
7500+4.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
LM4040B30QFTA
LM4040B30QFTA
Виробник: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CD-E1 MBR10100C.pdf
MBR10100CD-E1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A TO2523
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CD-G1 MBR10100C_Rev2018.pdf
MBR10100CD-G1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A TO2523
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CDTR-E1 MBR10100C_Rev2018.pdf
MBR10100CDTR-E1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CDTR-G1 MBR10100C_Rev2018.pdf
MBR10100CDTR-G1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CS2-E1 MBR10100C.pdf
MBR10100CS2-E1
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 100V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CS2-G1 MBR10100C_Rev2018.pdf
MBR10100CS2-G1
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 100V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CS2TR-E1 MBR10100C.pdf
MBR10100CS2TR-E1
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 100V 5A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR10100CS2TR-G1 MBR10100C_Rev2018.pdf
MBR10100CS2TR-G1
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 100V 5A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBR10100CTF-G1 MBR10100C.pdf
MBR10100CTF-G1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 100V 5A TO220F3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBR10150CT-E1 MBR10150C.pdf
MBR10150CT-E1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 150V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
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MBR10150CTF-E1 MBR10150C.pdf
MBR10150CTF-E1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 150V 5A TO220F3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
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MBR10150CTF-G1 MBR10150C.pdf
MBR10150CTF-G1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 150V 5A TO220F3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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MBR10200CD-E1 MBR10200C.pdf
MBR10200CD-E1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 200V 5A TO2523
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
товару немає в наявності
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MBR10200CD-G1 MBR10200C.pdf
MBR10200CD-G1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 200V 5A TO2523
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
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MBR10200CDTR-E1 MBR10200C.pdf
MBR10200CDTR-E1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 200V 5A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
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MBR10200CDTR-G1 MBR10200C.pdf
MBR10200CDTR-G1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 200V 5A TO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
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MBR10200CS2-E1 MBR10200C.pdf
MBR10200CS2-E1
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
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MBR10200CS2-G1 MBR10200C.pdf
MBR10200CS2-G1
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
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MBR10200CS2TR-E1 MBR10200C.pdf
MBR10200CS2TR-E1
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товару немає в наявності
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MBR10200CS2TR-G1 MBR10200C.pdf
MBR10200CS2TR-G1
Виробник: Diodes Incorporated
Description: DIODE ARRAY SCHOT 200V 5A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
товару немає в наявності
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MBR10200CT-E1 MBR10200C.pdf
MBR10200CT-E1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 200V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
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MBR10200CTF-E1 MBR10200C.pdf
MBR10200CTF-E1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 200V 5A TO220F3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
товару немає в наявності
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MBR10200CTF-G1 MBR10200C.pdf
MBR10200CTF-G1
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 200V 5A TO220F3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.02 грн
50+24.56 грн
100+21.96 грн
500+15.41 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
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