Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (71651) > Сторінка 354 з 1195
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BCR405UW6Q-7 | Diodes Incorporated |
Description: IC LED DRVR LIN PWM 50MA SOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 25kHz Type: Linear Operating Temperature: -55°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 50mA Internal Switch(s): No Supplier Device Package: SOT-26 Dimming: PWM Voltage - Supply (Min): 1.4V Voltage - Supply (Max): 40V Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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BCR420UFD-7 | Diodes Incorporated |
Description: IC LED DRIVER LINEAR 350MA 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -55°C ~ 150°C (TJ) Applications: Lighting, Signage Current - Output / Channel: 350mA Internal Switch(s): No Supplier Device Package: U-DFN2020-6 Voltage - Supply (Max): 40V Part Status: Active |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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BCR421UFD-7 | Diodes Incorporated |
Description: IC LED DRVR LIN PWM 350MA 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -55°C ~ 150°C (TJ) Applications: Lighting, Signage Current - Output / Channel: 350mA Internal Switch(s): No Supplier Device Package: U-DFN2020-6 Dimming: PWM Voltage - Supply (Max): 18V |
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BZT52C11-13-F | Diodes Incorporated |
Description: DIODE ZENER 11V 370MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±5.45% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-123 Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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D28V0H1U2P5Q-13 | Diodes Incorporated |
Description: TVS DIODE 28VWM 44VC POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 41A Voltage - Reverse Standoff (Typ): 28V (Max) Supplier Device Package: PowerDI™ 5 Unidirectional Channels: 1 Voltage - Breakdown (Min): 31V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 1800W (1.8kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DESD12V0S1BL-7B | Diodes Incorporated |
Description: TVS DIODE 12VWM 33.5V X1DFN10062Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 20pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: X1-DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 15V Voltage - Clamping (Max) @ Ipp: 33.5V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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DMC2038LVTQ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-23-6 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DMG3414UQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 20V 4.2A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Power Dissipation (Max): 780mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
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DMG7N65SCT | Diodes Incorporated |
Description: MOSFET N-CH 650V 7.7A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB (Type TH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| DMG7N65SCTI | Diodes Incorporated |
Description: MOSFET N-CH 650V 7.7A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V |
товару немає в наявності |
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DMG7N65SJ3 | Diodes Incorporated |
Description: MOSFET N-CH 650V 5.5A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DMG8N65SCT | Diodes Incorporated |
Description: MOSFET N-CH 650V 8A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DMN1004UFV-7 | Diodes Incorporated |
Description: MOSFET N-CH 12V 70A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V |
товару немає в наявності |
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DMN2056U-7 | Diodes Incorporated |
Description: MOSFET N-CHANNEL 20V 4A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V Power Dissipation (Max): 940mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V |
товару немає в наявності |
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| DMN3008SCP10-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V 30V X4-DSN3415Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 7A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DMN3016LFDF-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Power Dissipation (Max): 2.02W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DMN60H3D5SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 600V 2.8A TO252 |
товару немає в наявності |
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DMNH4005SCT | Diodes Incorporated |
Description: MOSFET N-CH 40V 150A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 20 V |
на замовлення 3080 шт: термін постачання 21-31 дні (днів) |
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DMNH4005SCTQ | Diodes Incorporated |
Description: MOSFET N-CH 40V 150A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DMNH4005SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 80A PWRDI5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DMNH4015SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 11A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMNH4026SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2 N-CHANNEL 7.5A 8SO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DMP1011LFV-13 | Diodes Incorporated |
Description: MOSFET P-CH 12V 19A POWERDI3333 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DMP1011LFV-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 19A POWERDI3333 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DMP2005UFG-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 89A POWERDI3333 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMP2021UFDE-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 11.1A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
на замовлення 1968000 шт: термін постачання 21-31 дні (днів) |
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DMP2035UFDF-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 8.1A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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DMP2035UFDF-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 8.1A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMP2035UVTQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 7.2A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMP2040UFDF-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 13A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMP2065UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.5A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DMP2088LCP3-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 2.9A X2DSN1006-3 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMP3007SFG-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 70A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 11.5A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DMP3017SFV-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 40A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Power Dissipation (Max): 31W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMP3017SFV-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 40A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Power Dissipation (Max): 31W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMP3098LQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.8A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V Power Dissipation (Max): 1.08W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1008 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 147000 шт: термін постачання 21-31 дні (днів) |
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DMT2004UFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 24V 70A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DMT3020LFCL-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.6A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN1616-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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DSS5220TQ-13 | Diodes Incorporated |
Description: TRANS PNP 20V 2A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| GBL410_HF | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 4A GBLPackaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 17723 шт: термін постачання 21-31 дні (днів) |
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| KX31327009 | Diodes Incorporated | Description: CLOCK SAW OSCILLATOR SEAM3225 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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P4SMAJ11ADF-13 | Diodes Incorporated |
Description: TVS DIODE 11VWM 18.2VC D-FLATPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 22A Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.2V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P4SMAJ17ADF-13 | Diodes Incorporated |
Description: TVS DIODE 17VWM 27.6VC D-FLATPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 14.5A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P4SMAJ7.0ADF-13 | Diodes Incorporated |
Description: TVS DIODE 7VWM 12VC D-FLATPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 33.3A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P4SMAJ8.0ADF-13 | Diodes Incorporated |
Description: TVS DIODE 8VWM 13.6VC D-FLATPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 29.4A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.89V Voltage - Clamping (Max) @ Ipp: 13.6V Power - Peak Pulse: 400W Power Line Protection: No |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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PDS4200HQ-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 4A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PI3CH3305UE | Diodes Incorporated |
Description: BUS SWITCH 3V MSOP-8Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PI3CH3305UEX | Diodes Incorporated |
Description: BUS SWITCH 3V MSOP-8Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PI3CH3345LE | Diodes Incorporated |
Description: BUS SWITCH 3V TSSOP-20Packaging: Tube Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PI3EQX7502AIZDE+DA | Diodes Incorporated |
Description: IC REDRIVER USB 3.0 2CH 24TQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3EQX7502BZDE+DA | Diodes Incorporated |
Description: IC REDRIVER USB 3.0 1CH 24TQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3EQX7502BZDE+DAX | Diodes Incorporated |
Description: IC REDRIVER USB 3.0 1CH 24TQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3EQX7502MZDE+CWX | Diodes Incorporated |
Description: IC REDRIVER USB 3.0 1CH 24TQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3HDMI511ZLE+DAX | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 32TQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3HDX511DZLE+DAX | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 30TQFNPackaging: Tape & Reel (TR) Package / Case: 30-WFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 3.3V Applications: HDMI Redriver, Level Shifter Supplier Device Package: 30-TQFN (2.5x4.5) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3HDX511FZLIEX | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 40TQFN Packaging: Tape & Reel (TR) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 3.3V Applications: HDMI Redriver, Level Shifter Supplier Device Package: 40-TQFN (3x6) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3USB10MZEE+DMX | Diodes Incorporated |
Description: IC USB SWITCH DUAL 2X1 12TDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3USB10MZKE+DMX | Diodes Incorporated |
Description: IC USB SWITCH DUAL 2X1 12TQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3USB32224BXEAEX | Diodes Incorporated | Description: IC SWITCH SPST USB 2.0 8TQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PI4IOE5V9520XTEX | Diodes Incorporated | Description: INTERFACE IO EXPANDER U-QFN1616- |
товару немає в наявності |
В кошику од. на суму грн. |
| BCR405UW6Q-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR LIN PWM 50MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): No
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRVR LIN PWM 50MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): No
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BCR420UFD-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRIVER LINEAR 350MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Voltage - Supply (Max): 40V
Part Status: Active
Description: IC LED DRIVER LINEAR 350MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.02 грн |
| 6000+ | 6.55 грн |
| 9000+ | 6.45 грн |
| 15000+ | 5.94 грн |
| 21000+ | 5.88 грн |
| 30000+ | 5.82 грн |
| BCR421UFD-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C11-13-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 11V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5.45%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 11V 370MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5.45%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| D28V0H1U2P5Q-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 28VWM 44VC POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: PowerDI™ 5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 28VWM 44VC POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: PowerDI™ 5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 1800W (1.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 27.55 грн |
| DESD12V0S1BL-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 12VWM 33.5V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15V
Voltage - Clamping (Max) @ Ipp: 33.5V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 33.5V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 20pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15V
Voltage - Clamping (Max) @ Ipp: 33.5V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.86 грн |
| DMC2038LVTQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.73 грн |
| 6000+ | 8.54 грн |
| DMG3414UQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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| DMG7N65SCT |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 650V 7.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (Type TH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 7.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (Type TH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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| DMG7N65SCTI |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 650V 7.7A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
Description: MOSFET N-CH 650V 7.7A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
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| DMG7N65SJ3 |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 650V 5.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 5.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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| DMG8N65SCT |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 650V 8A TO220AB
Description: MOSFET N-CH 650V 8A TO220AB
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| DMN1004UFV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 12V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V
Description: MOSFET N-CH 12V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V
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| DMN2056U-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 20V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 940mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V
Description: MOSFET N-CHANNEL 20V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 940mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V
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| DMN3008SCP10-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V 30V X4-DSN3415
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 7A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 15 V
Description: MOSFET BVDSS: 25V 30V X4-DSN3415
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 7A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 27.86 грн |
| 6000+ | 25.03 грн |
| DMN3016LFDF-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 12A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 2.02W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Description: MOSFET N-CH 30V 12A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 2.02W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.30 грн |
| 6000+ | 9.97 грн |
| 9000+ | 9.50 грн |
| 15000+ | 8.42 грн |
| DMN60H3D5SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 600V 2.8A TO252
Description: MOSFET N-CH 600V 2.8A TO252
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| DMNH4005SCT |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 20 V
Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 20 V
на замовлення 3080 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 231.39 грн |
| 50+ | 111.25 грн |
| 100+ | 100.41 грн |
| 500+ | 76.43 грн |
| 1000+ | 70.70 грн |
| 2000+ | 67.20 грн |
| DMNH4005SCTQ |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 150A TO220AB
Description: MOSFET N-CH 40V 150A TO220AB
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| DMNH4005SPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 80A PWRDI5060-8
Description: MOSFET N-CH 40V 80A PWRDI5060-8
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| DMNH4015SSD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 24.91 грн |
| DMNH4026SSDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2 N-CHANNEL 7.5A 8SO
Description: MOSFET 2 N-CHANNEL 7.5A 8SO
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| DMP1011LFV-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 19A POWERDI3333
Description: MOSFET P-CH 12V 19A POWERDI3333
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| DMP1011LFV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 19A POWERDI3333
Description: MOSFET P-CH 12V 19A POWERDI3333
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| DMP2005UFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 89A POWERDI3333
Description: MOSFET P-CH 20V 89A POWERDI3333
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| DMP2021UFDE-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 11.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Description: MOSFET P-CH 20V 11.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
на замовлення 1968000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.02 грн |
| 6000+ | 11.90 грн |
| 9000+ | 11.05 грн |
| 30000+ | 10.17 грн |
| DMP2035UFDF-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 8.16 грн |
| 20000+ | 7.27 грн |
| 30000+ | 6.97 грн |
| 50000+ | 6.48 грн |
| DMP2035UFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
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| DMP2035UVTQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 7.2A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 7.2A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.51 грн |
| DMP2040UFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 13A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Description: MOSFET P-CH 20V 13A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
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| DMP2065UFDB-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: MOSFET 2P-CH 20V 4.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.09 грн |
| 6000+ | 11.56 грн |
| 9000+ | 11.03 грн |
| 15000+ | 9.79 грн |
| 21000+ | 9.45 грн |
| 30000+ | 9.13 грн |
| DMP2088LCP3-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 2.9A X2DSN1006-3
Description: MOSFET P-CH 20V 2.9A X2DSN1006-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.19 грн |
| DMP3007SFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Description: MOSFET P-CH 30V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 24.72 грн |
| 4000+ | 21.95 грн |
| DMP3017SFV-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 40A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 31W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Description: MOSFET P-CH 30V 40A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 31W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
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| DMP3017SFV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 40A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 31W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Description: MOSFET P-CH 30V 40A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 31W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
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| DMP3098LQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1008 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1008 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.52 грн |
| 6000+ | 5.71 грн |
| 9000+ | 5.42 грн |
| 15000+ | 4.79 грн |
| DMT2004UFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 24V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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| DMT3020LFCL-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 7.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN1616-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 7.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN1616-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.17 грн |
| 6000+ | 10.73 грн |
| 9000+ | 10.22 грн |
| 15000+ | 9.06 грн |
| 21000+ | 8.75 грн |
| DSS5220TQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Qualification: AEC-Q101
Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.53 грн |
| GBL410_HF |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 17723 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.93 грн |
| 25+ | 24.56 грн |
| 100+ | 22.27 грн |
| 500+ | 20.16 грн |
| KX31327009 |
Виробник: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225
Description: CLOCK SAW OSCILLATOR SEAM3225
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| P4SMAJ11ADF-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 11VWM 18.2VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 11VWM 18.2VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
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| P4SMAJ17ADF-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14.5A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 17VWM 27.6VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14.5A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 400W
Power Line Protection: No
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| P4SMAJ7.0ADF-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 7VWM 12VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 7VWM 12VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
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| P4SMAJ8.0ADF-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 8VWM 13.6VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 8VWM 13.6VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.58 грн |
| PDS4200HQ-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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| PI3CH3305UEX |
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Виробник: Diodes Incorporated
Description: BUS SWITCH 3V MSOP-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: BUS SWITCH 3V MSOP-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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| PI3EQX7502AIZDE+DA |
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Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 2CH 24TQFN
Description: IC REDRIVER USB 3.0 2CH 24TQFN
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| PI3EQX7502BZDE+DA |
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Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 24TQFN
Description: IC REDRIVER USB 3.0 1CH 24TQFN
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| PI3EQX7502BZDE+DAX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 24TQFN
Description: IC REDRIVER USB 3.0 1CH 24TQFN
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| PI3EQX7502MZDE+CWX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 24TQFN
Description: IC REDRIVER USB 3.0 1CH 24TQFN
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| PI3HDMI511ZLE+DAX |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 32TQFN
Description: IC INTERFACE SPECIALIZED 32TQFN
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| PI3HDX511DZLE+DAX |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 30TQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 30-TQFN (2.5x4.5)
Part Status: Active
Description: IC INTERFACE SPECIALIZED 30TQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 30-TQFN (2.5x4.5)
Part Status: Active
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| PI3HDX511FZLIEX |
Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 40-TQFN (3x6)
Part Status: Obsolete
Description: IC INTERFACE SPECIALIZED 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 40-TQFN (3x6)
Part Status: Obsolete
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| PI3USB10MZEE+DMX |
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Виробник: Diodes Incorporated
Description: IC USB SWITCH DUAL 2X1 12TDFN
Description: IC USB SWITCH DUAL 2X1 12TDFN
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| PI3USB10MZKE+DMX |
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Виробник: Diodes Incorporated
Description: IC USB SWITCH DUAL 2X1 12TQFN
Description: IC USB SWITCH DUAL 2X1 12TQFN
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| PI3USB32224BXEAEX |
Виробник: Diodes Incorporated
Description: IC SWITCH SPST USB 2.0 8TQFN
Description: IC SWITCH SPST USB 2.0 8TQFN
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| PI4IOE5V9520XTEX |
Виробник: Diodes Incorporated
Description: INTERFACE IO EXPANDER U-QFN1616-
Description: INTERFACE IO EXPANDER U-QFN1616-
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