Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74738) > Сторінка 357 з 1246
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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DMP2160UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 420134 шт: термін постачання 21-31 дні (днів) |
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DMP32D4SFB-7B | Diodes Incorporated |
Description: MOSFET P-CH 30V 400MA 3DFNPackaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 15 V |
на замовлення 9198 шт: термін постачання 21-31 дні (днів) |
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DRTR5V0U1LP-7B | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 10VC X1DFN10062Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: X1-DFN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBTA06Q-7-F | Diodes Incorporated |
Description: TRANS NPN 80V 0.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 350 mW Qualification: AEC-Q101 |
на замовлення 68645 шт: термін постачання 21-31 дні (днів) |
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PAM2804AAB010 | Diodes Incorporated |
Description: IC LED DRIVER RGLTR 1A TSOT25Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.5MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Current - Output / Channel: 1A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: TSOT-25 Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 6V Part Status: Active |
на замовлення 29089 шт: термін постачання 21-31 дні (днів) |
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PAM8304AYR | Diodes Incorporated |
Description: IC AUDIO AMP D 8-DFNFeatures: Depop, Short-Circuit and Thermal Protection Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.8V ~ 6V Max Output Power x Channels @ Load: 3W x 1 @ 4Ohm Supplier Device Package: 8-DFN (3x3) Part Status: Active |
на замовлення 158624 шт: термін постачання 21-31 дні (днів) |
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PAM8403DR-H | Diodes Incorporated |
Description: IC AUDIO AMP D 16-SOPFeatures: Depop, Short-Circuit and Thermal Protection Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.8V ~ 5.5V Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm Supplier Device Package: 16-SOP Part Status: Active |
на замовлення 5006 шт: термін постачання 21-31 дні (днів) |
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PAM8908JER | Diodes Incorporated |
Description: IC AUDIO AMP AB U-QFN3030-16Features: Short-Circuit and Thermal Protection Packaging: Cut Tape (CT) Package / Case: 16-UFQFN Exposed Pad Output Type: 2-Channel (Stereo) with Stereo Headphones Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Max Output Power x Channels @ Load: 35mW x 2 @ 16Ohm Supplier Device Package: U-QFN3030-16 Part Status: Active |
на замовлення 7515 шт: термін постачання 21-31 дні (днів) |
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PI3DPX1207BZHEX | Diodes Incorporated |
Description: ACTIVE DISPLAY V-QFN3590-42 T&RPackaging: Cut Tape (CT) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Applications: I2C Data Rate (Max): 10Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMC2038LVTQ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-23-6 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI4IOE5V96248ZLEX | Diodes Incorporated |
Description: IC XPNDR 1MHZ I2C 56TQFNPackaging: Cut Tape (CT) Package / Case: 56-WFQFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Interface: I2C Number of I/O: 48 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Clock Frequency: 1 MHz Interrupt Output: Yes Supplier Device Package: 56-TQFN (7x7) Current - Output Source/Sink: 42mA, 480µA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 19446 шт: термін постачання 21-31 дні (днів) |
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D15V0M1U2LP3-7 | Diodes Incorporated |
Description: TVS DIODE 15VWM 24V X3DFN06032Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 19pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: X3-DFN0603-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.5V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 75W Power Line Protection: No Part Status: Active |
на замовлення 260000 шт: термін постачання 21-31 дні (днів) |
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DBF2510-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBFPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DBF Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DMC3025LSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.5A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMG4822SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 582500 шт: термін постачання 21-31 дні (днів) |
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DMP6050SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V |
на замовлення 725000 шт: термін постачання 21-31 дні (днів) |
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DMTH4011SPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMTH4011SPDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 22A PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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D15V0M1U2LP3-7 | Diodes Incorporated |
Description: TVS DIODE 15VWM 24V X3DFN06032Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 19pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: X3-DFN0603-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.5V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 75W Power Line Protection: No Part Status: Active |
на замовлення 263736 шт: термін постачання 21-31 дні (днів) |
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DBF2510-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBFPackaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DBF Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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DMC3025LSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.5A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 255 шт: термін постачання 21-31 дні (днів) |
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DMG4822SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 589853 шт: термін постачання 21-31 дні (днів) |
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DMP6050SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V |
на замовлення 725602 шт: термін постачання 21-31 дні (днів) |
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DMTH4011SPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 925 шт: термін постачання 21-31 дні (днів) |
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DMTH4011SPDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3565 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 22A PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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PI4IOE5V96224ZLEX | Diodes Incorporated |
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFNFeatures: POR Packaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Interface: I²C, SMBus Number of I/O: 24 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Clock Frequency: 1 MHz Interrupt Output: Yes Supplier Device Package: 32-TQFN (3x6) Current - Output Source/Sink: 25mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 10157 шт: термін постачання 21-31 дні (днів) |
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PI3WVR13412ZHEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN3590-42Features: HDMI Packaging: Tape & Reel (TR) Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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PI3WVR13412ZHEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN3590-42Features: HDMI Packaging: Cut Tape (CT) Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 9054 шт: термін постачання 21-31 дні (днів) |
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ADTC114YUAQ-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 0.1A SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 9145 шт: термін постачання 21-31 дні (днів) |
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BCR421UFDQ-7 | Diodes Incorporated |
Description: IC LED DRVR LIN PWM 350MA 6DFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -55°C ~ 150°C (TJ) Applications: Lighting, Signage Current - Output / Channel: 350mA Internal Switch(s): No Supplier Device Package: U-DFN2020-6 Dimming: PWM Voltage - Supply (Max): 18V Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 8969 шт: термін постачання 21-31 дні (днів) |
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DMP1009UFDF-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 15A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V |
на замовлення 2925 шт: термін постачання 21-31 дні (днів) |
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DMP3013SFV-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 12A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V |
на замовлення 17059 шт: термін постачання 21-31 дні (днів) |
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DMP34M4SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 135A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 1.5W Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
на замовлення 1097545 шт: термін постачання 21-31 дні (днів) |
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DMP4065SQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 40V 2.4A SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DPD13AWF-7 | Diodes Incorporated | Description: TVS DIODES 13VWM 21.5VC SOD123F |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HDS10M-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 1A HDSPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: HDS Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 126778 шт: термін постачання 21-31 дні (днів) |
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PI3DPX1202A2ZBEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN7070-48 T&R |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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PI3PCIE3412AZHEX | Diodes Incorporated |
Description: PCI SWITCH 2:1 4 CHAN 42TQFNFeatures: Bi-Directional, SATA, USB 3.0 Packaging: Cut Tape (CT) Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: PCI Express® On-State Resistance (Max): 5Ohm (Typ) -3db Bandwidth: 8.2GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 650 шт: термін постачання 21-31 дні (днів) |
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PI3PCIE3412AZLEX | Diodes Incorporated |
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5Features: Bi-Directional, SATA, USB 3.0 Packaging: Cut Tape (CT) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: PCI Express® On-State Resistance (Max): 5Ohm (Typ) -3db Bandwidth: 8.2GHz Supplier Device Package: 40-TQFN (3x6) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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PI4IOE5V6408ZTAEX | Diodes Incorporated |
Description: IC XPNDR 1MHZ I2C 16UQFNPackaging: Cut Tape (CT) Package / Case: 16-UFQFN Output Type: Push-Pull Mounting Type: Surface Mount Interface: I2C Number of I/O: 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Clock Frequency: 1 MHz Interrupt Output: Yes Supplier Device Package: 16-UQFN (1.8x2.6) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 10340 шт: термін постачання 21-31 дні (днів) |
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PI4IOE5V9535ZDEX | Diodes Incorporated |
Description: IC XPNDR 400KHZ I2C 24TQFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Number of I/O: 16 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 24-TQFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 27407 шт: термін постачання 21-31 дні (днів) |
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PI6CG15401ZHIEX | Diodes Incorporated |
Description: IC CLOCK GENERATOR 32TQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI7C9X752FAEX | Diodes Incorporated |
Description: IC BRIDGE DUAL UART 48TQFP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PI7C9X794FCEX | Diodes Incorporated |
Description: IC BRIDGE QUAD UART 64LQFP |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PT7C433833AZEEX | Diodes Incorporated |
Description: IC RTC CLK/CALENDAR I2C 8TDFNFeatures: Leap Year, NVSRAM, Square Wave Output Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 56B Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-TDFN (2x3) Voltage - Supply, Battery: 1.5V ~ 3.7V Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDT30B100D1-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 30A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V |
на замовлення 50601 шт: термін постачання 21-31 дні (днів) |
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DPD13AWF-7 | Diodes Incorporated | Description: TVS DIODES 13VWM 21.5VC SOD123F |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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ZXMN6A08GQTC | Diodes Incorporated |
Description: MOSFET N-CH 60V 3.8A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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PI3DPX1205AZLBEX | Diodes Incorporated |
Description: ACTIVE DISPLAY W-QFN3060-40 T&RPackaging: Cut Tape (CT) Package / Case: 40-WFQFN Exposed Pad Number of Channels: 6 Mounting Type: Surface Mount Output: DisplayPort Type: Buffer, ReDriver Input: DisplayPort Voltage - Supply: 3.3V Applications: DisplayPort Data Rate (Max): 10Gbps Supplier Device Package: 40-TQFN (4x6) Signal Conditioning: Input Equalization |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI3HDX231ZLEX | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 72TQFNPackaging: Cut Tape (CT) Package / Case: 72-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Applications: HDMI Redriver, Level Shifter Supplier Device Package: 72-TQFN (11x5) Part Status: Active |
на замовлення 93980 шт: термін постачання 21-31 дні (днів) |
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ZXTP56020FDBQ-7 | Diodes Incorporated |
Description: TRANS 2PNP 20V 2A U-DFN2020-6Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Supplier Device Package: U-DFN2020-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 168000 шт: термін постачання 21-31 дні (днів) |
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ZXTP56020FDBQ-7 | Diodes Incorporated |
Description: TRANS 2PNP 20V 2A U-DFN2020-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Supplier Device Package: U-DFN2020-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 170441 шт: термін постачання 21-31 дні (днів) |
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PI3EQX1004B1ZHEX | Diodes Incorporated |
Description: USB3 EQX V-QFN3590-42Packaging: Tape & Reel (TR) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: 125°C (TJ) Voltage - Supply: 3V ~ 3.6V Applications: USB 3.0 Data Rate (Max): 10Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization Part Status: Active |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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PI3EQX1004B1ZHEX | Diodes Incorporated |
Description: USB3 EQX V-QFN3590-42Packaging: Cut Tape (CT) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: 125°C (TJ) Voltage - Supply: 3V ~ 3.6V Applications: USB 3.0 Data Rate (Max): 10Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization Part Status: Active |
на замовлення 5585 шт: термін постачання 21-31 дні (днів) |
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DMN61D9UWQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 400MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 440mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 9690 шт: термін постачання 21-31 дні (днів) |
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DMP3028LPSQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 21A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 59535 шт: термін постачання 21-31 дні (днів) |
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DMT36M1LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 65A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V |
на замовлення 2275 шт: термін постачання 21-31 дні (днів) |
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DMTH6002LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 100A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 167W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V |
на замовлення 690 шт: термін постачання 21-31 дні (днів) |
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| DMP2160UFDB-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 420134 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.80 грн |
| 13+ | 25.24 грн |
| 100+ | 17.16 грн |
| 500+ | 12.62 грн |
| 1000+ | 11.46 грн |
| DMP32D4SFB-7B |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 400MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 15 V
Description: MOSFET P-CH 30V 400MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 15 V
на замовлення 9198 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.50 грн |
| 18+ | 17.16 грн |
| 25+ | 14.18 грн |
| 50+ | 11.58 грн |
| 100+ | 10.10 грн |
| DRTR5V0U1LP-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 10VC X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 10VC X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
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| MMBTA06Q-7-F |
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Виробник: Diodes Incorporated
Description: TRANS NPN 80V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Qualification: AEC-Q101
Description: TRANS NPN 80V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Qualification: AEC-Q101
на замовлення 68645 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.79 грн |
| 26+ | 11.97 грн |
| 31+ | 9.88 грн |
| 50+ | 8.03 грн |
| 100+ | 6.98 грн |
| PAM2804AAB010 |
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Виробник: Diodes Incorporated
Description: IC LED DRIVER RGLTR 1A TSOT25
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.5MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 6V
Part Status: Active
Description: IC LED DRIVER RGLTR 1A TSOT25
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.5MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 6V
Part Status: Active
на замовлення 29089 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.59 грн |
| 12+ | 26.84 грн |
| 25+ | 23.97 грн |
| 50+ | 20.87 грн |
| 100+ | 19.53 грн |
| PAM8304AYR |
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Виробник: Diodes Incorporated
Description: IC AUDIO AMP D 8-DFN
Features: Depop, Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 6V
Max Output Power x Channels @ Load: 3W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: IC AUDIO AMP D 8-DFN
Features: Depop, Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 6V
Max Output Power x Channels @ Load: 3W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 158624 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.93 грн |
| 10+ | 44.15 грн |
| 25+ | 39.68 грн |
| 50+ | 34.72 грн |
| 100+ | 32.64 грн |
| PAM8403DR-H |
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Виробник: Diodes Incorporated
Description: IC AUDIO AMP D 16-SOP
Features: Depop, Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.5V
Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC AUDIO AMP D 16-SOP
Features: Depop, Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.5V
Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 5006 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.34 грн |
| 10+ | 43.31 грн |
| 25+ | 38.98 грн |
| 50+ | 34.10 грн |
| 100+ | 32.08 грн |
| PAM8908JER |
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Виробник: Diodes Incorporated
Description: IC AUDIO AMP AB U-QFN3030-16
Features: Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Max Output Power x Channels @ Load: 35mW x 2 @ 16Ohm
Supplier Device Package: U-QFN3030-16
Part Status: Active
Description: IC AUDIO AMP AB U-QFN3030-16
Features: Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Max Output Power x Channels @ Load: 35mW x 2 @ 16Ohm
Supplier Device Package: U-QFN3030-16
Part Status: Active
на замовлення 7515 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.09 грн |
| 10+ | 47.12 грн |
| 25+ | 42.39 грн |
| 50+ | 37.12 грн |
| 100+ | 34.93 грн |
| PI3DPX1207BZHEX |
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Виробник: Diodes Incorporated
Description: ACTIVE DISPLAY V-QFN3590-42 T&R
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: I2C
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Obsolete
Description: ACTIVE DISPLAY V-QFN3590-42 T&R
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: I2C
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Obsolete
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В кошику
од. на суму грн.
| DMC2038LVTQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| PI4IOE5V96248ZLEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C 56TQFN
Packaging: Cut Tape (CT)
Package / Case: 56-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 48
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 56-TQFN (7x7)
Current - Output Source/Sink: 42mA, 480µA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C 56TQFN
Packaging: Cut Tape (CT)
Package / Case: 56-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 48
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 56-TQFN (7x7)
Current - Output Source/Sink: 42mA, 480µA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 19446 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.83 грн |
| 10+ | 150.28 грн |
| 25+ | 137.43 грн |
| 50+ | 121.69 грн |
| 100+ | 115.69 грн |
| D15V0M1U2LP3-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
на замовлення 260000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.57 грн |
| 20000+ | 2.18 грн |
| 30000+ | 2.14 грн |
| DBF2510-13 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMC3025LSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMG4822SSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 582500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 24.69 грн |
| 5000+ | 21.98 грн |
| 7500+ | 21.07 грн |
| 12500+ | 19.44 грн |
| DMP6050SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
на замовлення 725000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 18.51 грн |
| 5000+ | 16.42 грн |
| 7500+ | 16.33 грн |
| 12500+ | 14.09 грн |
| DMTH4011SPD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH4011SPDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 34.55 грн |
| DMTH43M8LPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 22.75 грн |
| D15V0M1U2LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
на замовлення 263736 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.67 грн |
| 37+ | 8.39 грн |
| 103+ | 2.98 грн |
| 500+ | 2.63 грн |
| 1000+ | 2.46 грн |
| 2000+ | 2.42 грн |
| 5000+ | 2.35 грн |
| DBF2510-13 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.01 грн |
| 10+ | 31.49 грн |
| 100+ | 21.88 грн |
| DMC3025LSDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 255 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.06 грн |
| 10+ | 54.59 грн |
| 25+ | 45.81 грн |
| 50+ | 37.87 грн |
| 100+ | 33.54 грн |
| DMG4822SSDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 589853 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.34 грн |
| 10+ | 52.84 грн |
| 100+ | 36.55 грн |
| 500+ | 28.66 грн |
| 1000+ | 24.39 грн |
| DMP6050SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
на замовлення 725602 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.89 грн |
| 10+ | 45.14 грн |
| 100+ | 27.59 грн |
| 500+ | 20.48 грн |
| 1000+ | 18.62 грн |
| DMTH4011SPD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.02 грн |
| 10+ | 57.34 грн |
| 100+ | 37.91 грн |
| 500+ | 27.73 грн |
| DMTH4011SPDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3565 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.10 грн |
| 10+ | 76.70 грн |
| 100+ | 51.38 грн |
| 500+ | 38.04 грн |
| 1000+ | 34.77 грн |
| DMTH43M8LPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.89 грн |
| 10+ | 53.07 грн |
| 100+ | 34.94 грн |
| 500+ | 25.47 грн |
| 1000+ | 23.11 грн |
| PI4IOE5V96224ZLEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFN
Features: POR
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I²C, SMBus
Number of I/O: 24
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 32-TQFN (3x6)
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFN
Features: POR
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I²C, SMBus
Number of I/O: 24
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 32-TQFN (3x6)
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 10157 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.49 грн |
| 10+ | 142.89 грн |
| 25+ | 134.77 грн |
| 100+ | 107.75 грн |
| 250+ | 101.18 грн |
| 500+ | 88.53 грн |
| 1000+ | 72.15 грн |
| PI3WVR13412ZHEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Features: HDMI
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH V-QFN3590-42
Features: HDMI
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3500+ | 63.58 грн |
| PI3WVR13412ZHEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Features: HDMI
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH V-QFN3590-42
Features: HDMI
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 9054 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.06 грн |
| 10+ | 90.89 грн |
| 25+ | 82.56 грн |
| 50+ | 72.77 грн |
| 100+ | 68.88 грн |
| ADTC114YUAQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 9145 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.79 грн |
| 26+ | 11.74 грн |
| 32+ | 9.67 грн |
| 50+ | 7.86 грн |
| 100+ | 6.84 грн |
| BCR421UFDQ-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 8969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.21 грн |
| 13+ | 25.31 грн |
| 25+ | 22.60 грн |
| 50+ | 19.66 грн |
| 100+ | 18.40 грн |
| DMP1009UFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
на замовлення 2925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.93 грн |
| 10+ | 39.11 грн |
| 25+ | 32.73 грн |
| 50+ | 26.95 грн |
| 100+ | 23.77 грн |
| DMP3013SFV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
на замовлення 17059 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.47 грн |
| 10+ | 41.94 грн |
| 25+ | 35.07 грн |
| 50+ | 28.91 грн |
| 100+ | 25.51 грн |
| DMP34M4SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
на замовлення 1097545 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.73 грн |
| 10+ | 70.68 грн |
| 100+ | 47.74 грн |
| 500+ | 35.34 грн |
| 1000+ | 32.29 грн |
| DMP4065SQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| DPD13AWF-7 |
Виробник: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
Description: TVS DIODES 13VWM 21.5VC SOD123F
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| HDS10M-13 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 126778 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.01 грн |
| 14+ | 22.42 грн |
| 25+ | 18.63 грн |
| 50+ | 15.27 грн |
| 100+ | 13.37 грн |
| PI3DPX1202A2ZBEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN7070-48 T&R
Description: DISPLAY SWITCH V-QFN7070-48 T&R
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.57 грн |
| PI3PCIE3412AZHEX |
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Виробник: Diodes Incorporated
Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Features: Bi-Directional, SATA, USB 3.0
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Features: Bi-Directional, SATA, USB 3.0
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.15 грн |
| 10+ | 112.69 грн |
| 25+ | 102.63 грн |
| 50+ | 90.65 грн |
| 100+ | 85.96 грн |
| PI3PCIE3412AZLEX |
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Виробник: Diodes Incorporated
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Features: Bi-Directional, SATA, USB 3.0
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Features: Bi-Directional, SATA, USB 3.0
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 251.00 грн |
| PI4IOE5V6408ZTAEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 10340 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.18 грн |
| 10+ | 41.25 грн |
| 25+ | 37.12 грн |
| 50+ | 32.47 грн |
| 100+ | 30.52 грн |
| PI4IOE5V9535ZDEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 27407 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.19 грн |
| 10+ | 82.65 грн |
| 25+ | 74.97 грн |
| 50+ | 66.03 грн |
| 100+ | 62.46 грн |
| PI6CG15401ZHIEX |
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Виробник: Diodes Incorporated
Description: IC CLOCK GENERATOR 32TQFN
Description: IC CLOCK GENERATOR 32TQFN
товару немає в наявності
В кошику
од. на суму грн.
| PI7C9X752FAEX |
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Виробник: Diodes Incorporated
Description: IC BRIDGE DUAL UART 48TQFP
Description: IC BRIDGE DUAL UART 48TQFP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| PI7C9X794FCEX |
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Виробник: Diodes Incorporated
Description: IC BRIDGE QUAD UART 64LQFP
Description: IC BRIDGE QUAD UART 64LQFP
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| PT7C433833AZEEX |
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Виробник: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TDFN
Features: Leap Year, NVSRAM, Square Wave Output
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8TDFN
Features: Leap Year, NVSRAM, Square Wave Output
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| SDT30B100D1-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Description: DIODE SCHOTTKY 100V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
на замовлення 50601 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.14 грн |
| 10+ | 50.09 грн |
| 25+ | 42.03 грн |
| 50+ | 34.70 грн |
| 100+ | 30.72 грн |
| DPD13AWF-7 |
Виробник: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
Description: TVS DIODES 13VWM 21.5VC SOD123F
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| ZXMN6A08GQTC |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| PI3DPX1205AZLBEX |
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Виробник: Diodes Incorporated
Description: ACTIVE DISPLAY W-QFN3060-40 T&R
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 6
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 10Gbps
Supplier Device Package: 40-TQFN (4x6)
Signal Conditioning: Input Equalization
Description: ACTIVE DISPLAY W-QFN3060-40 T&R
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 6
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 10Gbps
Supplier Device Package: 40-TQFN (4x6)
Signal Conditioning: Input Equalization
товару немає в наявності
В кошику
од. на суму грн.
| PI3HDX231ZLEX |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 72TQFN
Packaging: Cut Tape (CT)
Package / Case: 72-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 72-TQFN (11x5)
Part Status: Active
Description: IC INTERFACE SPECIALIZED 72TQFN
Packaging: Cut Tape (CT)
Package / Case: 72-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 72-TQFN (11x5)
Part Status: Active
на замовлення 93980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.13 грн |
| 10+ | 223.10 грн |
| 25+ | 210.93 грн |
| 100+ | 171.54 грн |
| 250+ | 162.74 грн |
| 500+ | 146.03 грн |
| 1000+ | 121.14 грн |
| ZXTP56020FDBQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 168000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.66 грн |
| 6000+ | 12.98 грн |
| 9000+ | 12.41 грн |
| 15000+ | 11.03 грн |
| 21000+ | 10.67 грн |
| 30000+ | 10.55 грн |
| ZXTP56020FDBQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 170441 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.97 грн |
| 10+ | 36.45 грн |
| 100+ | 23.67 грн |
| 500+ | 17.04 грн |
| 1000+ | 15.37 грн |
| PI3EQX1004B1ZHEX |
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Виробник: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
Description: USB3 EQX V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3500+ | 116.62 грн |
| PI3EQX1004B1ZHEX |
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Виробник: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
Description: USB3 EQX V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
на замовлення 5585 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.08 грн |
| 10+ | 160.73 грн |
| 25+ | 147.10 грн |
| 50+ | 130.36 грн |
| 100+ | 124.02 грн |
| DMN61D9UWQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Qualification: AEC-Q101
на замовлення 9690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.55 грн |
| 22+ | 14.49 грн |
| 100+ | 9.10 грн |
| 500+ | 6.32 грн |
| 1000+ | 5.61 грн |
| 2000+ | 5.00 грн |
| 5000+ | 4.28 грн |
| DMP3028LPSQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
на замовлення 59535 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.39 грн |
| 10+ | 59.17 грн |
| 100+ | 39.18 грн |
| 500+ | 28.69 грн |
| 1000+ | 26.09 грн |
| DMT36M1LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Description: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
на замовлення 2275 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.72 грн |
| 10+ | 39.27 грн |
| 25+ | 32.82 грн |
| 50+ | 27.03 грн |
| 100+ | 23.84 грн |
| DMTH6002LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.91 грн |
| 10+ | 137.70 грн |
| 25+ | 117.66 грн |
| 50+ | 98.79 грн |
| 100+ | 88.99 грн |



























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