Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72164) > Сторінка 428 з 1203
| Фото | Назва | Виробник | Інформація |
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PT7M6128NLTA5EX | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7M6127NLTA5EX | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7M6518NLTA5EX | Diodes Incorporated | Description: IC SUPERVISOR 1 CHANNEL SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7M6527NLTA5EX | Diodes Incorporated | Description: IC SUPERVISOR 1 CHANNEL SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7M6101CLTA5EX | Diodes Incorporated | Description: IC SUPERVISOR 1 CHANNEL SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7M6101NLTA5EX | Diodes Incorporated | Description: IC SUPERVISOR 1 CHANNEL SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PT7M6101CLTA5E | Diodes Incorporated | Description: IC SUPERVISOR 1 CHANNEL SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PT7M6101NLTA5E | Diodes Incorporated | Description: IC SUPERVISOR 1 CHANNEL SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI6C5913004-01ZHIEX | Diodes Incorporated | Description: CLOCK BUFFER W-QFN3030-16 T&R 3. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ58AQ-13-F | Diodes Incorporated |
Description: TVS DIODE 58VWM 93.6VC SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 4.3A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMAJ58AQ-13-F | Diodes Incorporated |
Description: TVS DIODE 58VWM 93.6VC SMAPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 4.3A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2935 шт: термін постачання 21-31 дні (днів) |
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MMSTA64-7 | Diodes Incorporated |
Description: TRANS PNP DARL 30V 0.5A SC70-3 |
на замовлення 2779 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DDTA114WCA-7 | Diodes Incorporated |
Description: TRANS PREBIAS PNP 200MW SOT23-3 |
на замовлення 451 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMTH10H010SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DMTH10H010SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9855 шт: термін постачання 21-31 дні (днів) |
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DMTH10H010LCT | Diodes Incorporated |
Description: MOSFET N-CH 100V 108A TO220AB |
на замовлення 1308 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| DMTH10H025LPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V-100V POWERDI50 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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DMTH10H015LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 52.5A TO252-4L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH10H025LPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH10H009LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH10H009SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH10H015SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH10H010LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 98.4A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 13A, 10V Power Dissipation (Max): 1.5W, 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH10H015SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMTH10H010LCTB-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 108A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH10H4M5LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMTH10H010SCT | Diodes Incorporated |
Description: MOSFET N-CH 100V 100A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH10H005LCT | Diodes Incorporated |
Description: MOSFET N-CH 100V 140A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3688 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 354 шт: термін постачання 21-31 дні (днів) |
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DMTH10H030LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 28A TO252-4L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2160UFDBQ-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 225000 шт: термін постачання 21-31 дні (днів) |
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DMP2160UFDBQ-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 229406 шт: термін постачання 21-31 дні (днів) |
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| DMP2160UFDB-7R | Diodes Incorporated |
Description: MOSFET P-CH SOT23 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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74AUP2G17FZ4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 3.6V 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.8V ~ 3.6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 4mA, 4mA Supplier Device Package: X2-DFN1410-6 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS16HLPQ-7B | Diodes Incorporated |
Description: DIODE STD 100V 215MA X1DFN10062Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS16HLPQ-7B | Diodes Incorporated |
Description: DIODE STD 100V 215MA X1DFN10062Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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F95400008 | Diodes Incorporated |
Description: CRYSTAL 54.0000MHZ 19PFPackaging: Tape & Reel (TR) Load Capacitance: 19pF Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±15ppm Frequency Tolerance: ±15ppm Operating Mode: Fundamental Part Status: Obsolete ESR (Equivalent Series Resistance): 15 Ohms Frequency: 54 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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F95400010 | Diodes Incorporated |
Description: CRYSTAL 54.0000MHZ 19PFPackaging: Tape & Reel (TR) Load Capacitance: 19pF Type: MHz Crystal Operating Temperature: -20°C ~ 85°C Frequency Stability: ±15ppm Frequency Tolerance: ±15ppm Operating Mode: Fundamental Part Status: Obsolete ESR (Equivalent Series Resistance): 50 Ohms Frequency: 54 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| AZ4580P-E1 | Diodes Incorporated | Description: IC AUDIO 2 CIRCUIT 8DIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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P6SMAJ75ADF | Diodes Incorporated |
Description: TVS DIODE 75VWM 121VC D-FLATPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.9A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMAJ75ADF | Diodes Incorporated |
Description: TVS DIODE 75VWM 121VC D-FLATPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.9A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMAJ75ADF-13 | Diodes Incorporated |
Description: TVS DIODE 75VWM 121VC D-FLATPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.9A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4SMAJ85ADF-13 | Diodes Incorporated |
Description: TVS DIODE 85VWM 137VC D-FLATPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 2.9A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 400W Power Line Protection: No |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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P6SMAJ85ADF | Diodes Incorporated |
Description: TVS DIODE 85V 137V DFLAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMAJ85ADF | Diodes Incorporated |
Description: TVS DIODE 85V 137V DFLAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMAJ85ADF-13 | Diodes Incorporated |
Description: TVS DIODE 85VWM 137VC D-FLATPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.4A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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P6SMAJ78ADF | Diodes Incorporated |
Description: TVS DIODE 78V 126V DFLAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMAJ78ADF | Diodes Incorporated |
Description: TVS DIODE 78V 126V DFLAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMAJ78ADF-13 | Diodes Incorporated |
Description: TVS DIODE 78V 126V DFLAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ZXPD4000DH-7 | Diodes Incorporated |
Description: PRINTER HEAD DRIVER V-DFN3030-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PT7C433833AWEX | Diodes Incorporated |
Description: IC RTC I2C SER 8SOIC T&R 2.5K |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7C433833AWEX | Diodes Incorporated |
Description: IC RTC I2C SER 8SOIC T&R 2.5K |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7C433833AUEX | Diodes Incorporated |
Description: IC RTC CLK/CAL I2C 8MSOP TR 2.5KPackaging: Tape & Reel (TR) Features: Leap Year, NVSRAM, Square Wave Output Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 56B Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-MSOP Voltage - Supply, Battery: 1.5V ~ 3.7V Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7C433833AUEX | Diodes Incorporated |
Description: IC RTC CLK/CAL I2C 8MSOP TR 2.5KPackaging: Cut Tape (CT) Features: Leap Year, NVSRAM, Square Wave Output Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 56B Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-MSOP Voltage - Supply, Battery: 1.5V ~ 3.7V Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7C4337AWE | Diodes Incorporated |
Description: IC RTC CLK/CALENDAR I2C |
на замовлення 457 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PT7C4339WEX | Diodes Incorporated |
Description: IC RTC CLK/CALENDAR I2C 8SOICPackaging: Tape & Reel (TR) Features: Alarm, Leap Year, Square Wave Output Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD Supplier Device Package: 8-SOIC Voltage - Supply, Battery: 1.3V ~ 3.7V Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V DigiKey Programmable: Not Verified |
на замовлення 15500 шт: термін постачання 21-31 дні (днів) |
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PT7C4339WEX | Diodes Incorporated |
Description: IC RTC CLK/CALENDAR I2C 8SOICPackaging: Cut Tape (CT) Features: Alarm, Leap Year, Square Wave Output Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD Supplier Device Package: 8-SOIC Voltage - Supply, Battery: 1.3V ~ 3.7V Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V DigiKey Programmable: Not Verified |
на замовлення 15908 шт: термін постачання 21-31 дні (днів) |
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PT7C43390AWEX | Diodes Incorporated |
Description: IC RTC CLK/CALENDAR I2C 8SOICPackaging: Tape & Reel (TR) Features: Alarm, Leap Year, Square Wave Output Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.35V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-SOIC Current - Timekeeping (Max): 0.6µA ~ 0.7µA @ 3V ~ 5V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7C4337BWEX | Diodes Incorporated | Description: IC REAL TIME CLOCK SO-8 T&R 2.5K |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7C4337BUEX | Diodes Incorporated | Description: IC REAL TIME CLK MSOP-8 T&R 2.5K |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PT7C4337BZEEX | Diodes Incorporated | Description: IC REAL TIME CLK W-DFN2030-8 T&R |
товару немає в наявності |
В кошику од. на суму грн. |
| PT7M6128NLTA5EX |
![]() |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| PT7M6127NLTA5EX |
![]() |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| PT7M6518NLTA5EX |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| PT7M6527NLTA5EX |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| PT7M6101CLTA5EX |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| PT7M6101NLTA5EX |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| PT7M6101CLTA5E |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| PT7M6101NLTA5E |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
товару немає в наявності
В кошику
од. на суму грн.
| PI6C5913004-01ZHIEX |
Виробник: Diodes Incorporated
Description: CLOCK BUFFER W-QFN3030-16 T&R 3.
Description: CLOCK BUFFER W-QFN3030-16 T&R 3.
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ58AQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ58AQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 58VWM 93.6VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.83 грн |
| 12+ | 25.50 грн |
| 100+ | 16.28 грн |
| 500+ | 11.54 грн |
| 1000+ | 10.33 грн |
| 2000+ | 9.32 грн |
| MMSTA64-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP DARL 30V 0.5A SC70-3
Description: TRANS PNP DARL 30V 0.5A SC70-3
на замовлення 2779 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DDTA114WCA-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Description: TRANS PREBIAS PNP 200MW SOT23-3
на замовлення 451 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMTH10H010SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 34.10 грн |
| 5000+ | 31.00 грн |
| DMTH10H010SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.17 грн |
| 10+ | 77.10 грн |
| 100+ | 51.90 грн |
| 500+ | 38.56 грн |
| 1000+ | 35.61 грн |
| DMTH10H010LCT |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 108A TO220AB
Description: MOSFET N-CH 100V 108A TO220AB
на замовлення 1308 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMTH10H025LPS-13 |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V POWERDI50
Description: MOSFET BVDSS: 61V-100V POWERDI50
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMTH10H015LK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 52.5A TO252-4L
Description: MOSFET N-CH 100V 52.5A TO252-4L
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H025LPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Description: MOSFET N-CH 100V PWRDI5060
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H009LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Description: MOSFET N-CH 100V PWRDI5060
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H009SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Description: MOSFET N-CH 100V PWRDI5060
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H015SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 32.70 грн |
| DMTH10H010LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 98.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W, 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 98.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W, 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H015SPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 39.26 грн |
| DMTH10H010LCTB-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 108A TO220AB
Description: MOSFET N-CH 100V 108A TO220AB
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H4M5LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Description: MOSFET N-CH 100V PWRDI5060
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMTH10H010SCT |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 100A TO220AB
Description: MOSFET N-CH 100V 100A TO220AB
товару немає в наявності
В кошику
од. на суму грн.
| DMTH10H005LCT |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3688 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 13A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3688 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 354 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 184.58 грн |
| 10+ | 147.59 грн |
| 100+ | 117.44 грн |
| DMTH10H030LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 28A TO252-4L
Description: MOSFET N-CH 100V 28A TO252-4L
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| DMP2160UFDBQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 225000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.74 грн |
| 6000+ | 11.64 грн |
| 9000+ | 10.81 грн |
| 30000+ | 9.96 грн |
| DMP2160UFDBQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 229406 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.16 грн |
| 10+ | 31.12 грн |
| 100+ | 21.62 грн |
| 500+ | 15.85 грн |
| 1000+ | 12.88 грн |
| 74AUP2G17FZ4-7 |
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Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN1410-6
Part Status: Active
Description: IC BUFFER NON-INVERT 3.6V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: X2-DFN1410-6
Part Status: Active
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| BAS16HLPQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
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| BAS16HLPQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STD 100V 215MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
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| F95400008 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 54.0000MHZ 19PF
Packaging: Tape & Reel (TR)
Load Capacitance: 19pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Part Status: Obsolete
ESR (Equivalent Series Resistance): 15 Ohms
Frequency: 54 MHz
Description: CRYSTAL 54.0000MHZ 19PF
Packaging: Tape & Reel (TR)
Load Capacitance: 19pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Part Status: Obsolete
ESR (Equivalent Series Resistance): 15 Ohms
Frequency: 54 MHz
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| F95400010 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 54.0000MHZ 19PF
Packaging: Tape & Reel (TR)
Load Capacitance: 19pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Part Status: Obsolete
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 54 MHz
Description: CRYSTAL 54.0000MHZ 19PF
Packaging: Tape & Reel (TR)
Load Capacitance: 19pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 85°C
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Operating Mode: Fundamental
Part Status: Obsolete
ESR (Equivalent Series Resistance): 50 Ohms
Frequency: 54 MHz
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| AZ4580P-E1 |
Виробник: Diodes Incorporated
Description: IC AUDIO 2 CIRCUIT 8DIP
Description: IC AUDIO 2 CIRCUIT 8DIP
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| P6SMAJ75ADF |
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Виробник: Diodes Incorporated
Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
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| P6SMAJ75ADF |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
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| P6SMAJ75ADF-13 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 75VWM 121VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
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| P4SMAJ85ADF-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 85VWM 137VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 85VWM 137VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.51 грн |
| P6SMAJ85ADF |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 85V 137V DFLAT
Description: TVS DIODE 85V 137V DFLAT
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| P6SMAJ85ADF |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 85V 137V DFLAT
Description: TVS DIODE 85V 137V DFLAT
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| P6SMAJ85ADF-13 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 85VWM 137VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 85VWM 137VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 8.42 грн |
| P6SMAJ78ADF |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 78V 126V DFLAT
Description: TVS DIODE 78V 126V DFLAT
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| P6SMAJ78ADF |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 78V 126V DFLAT
Description: TVS DIODE 78V 126V DFLAT
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| P6SMAJ78ADF-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 78V 126V DFLAT
Description: TVS DIODE 78V 126V DFLAT
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| ZXPD4000DH-7 |
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Виробник: Diodes Incorporated
Description: PRINTER HEAD DRIVER V-DFN3030-8
Description: PRINTER HEAD DRIVER V-DFN3030-8
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| PT7C433833AWEX |
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Виробник: Diodes Incorporated
Description: IC RTC I2C SER 8SOIC T&R 2.5K
Description: IC RTC I2C SER 8SOIC T&R 2.5K
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| PT7C433833AWEX |
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Виробник: Diodes Incorporated
Description: IC RTC I2C SER 8SOIC T&R 2.5K
Description: IC RTC I2C SER 8SOIC T&R 2.5K
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| PT7C433833AUEX |
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Виробник: Diodes Incorporated
Description: IC RTC CLK/CAL I2C 8MSOP TR 2.5K
Packaging: Tape & Reel (TR)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CAL I2C 8MSOP TR 2.5K
Packaging: Tape & Reel (TR)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
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| PT7C433833AUEX |
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Виробник: Diodes Incorporated
Description: IC RTC CLK/CAL I2C 8MSOP TR 2.5K
Packaging: Cut Tape (CT)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CAL I2C 8MSOP TR 2.5K
Packaging: Cut Tape (CT)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
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| PT7C4337AWE |
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Виробник: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C
Description: IC RTC CLK/CALENDAR I2C
на замовлення 457 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PT7C4339WEX |
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Виробник: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 8-SOIC
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 8-SOIC
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V
DigiKey Programmable: Not Verified
на замовлення 15500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 41.08 грн |
| 5000+ | 37.58 грн |
| 12500+ | 36.17 грн |
| PT7C4339WEX |
![]() |
Виробник: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 8-SOIC
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Cut Tape (CT)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD
Supplier Device Package: 8-SOIC
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 250µA @ 3V ~ 5.5V
DigiKey Programmable: Not Verified
на замовлення 15908 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.35 грн |
| 10+ | 83.40 грн |
| 25+ | 79.11 грн |
| 100+ | 60.99 грн |
| 250+ | 57.01 грн |
| 500+ | 50.39 грн |
| 1000+ | 39.13 грн |
| PT7C43390AWEX |
![]() |
Виробник: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.35V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.6µA ~ 0.7µA @ 3V ~ 5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8SOIC
Packaging: Tape & Reel (TR)
Features: Alarm, Leap Year, Square Wave Output
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.35V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-SOIC
Current - Timekeeping (Max): 0.6µA ~ 0.7µA @ 3V ~ 5V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| PT7C4337BWEX |
Виробник: Diodes Incorporated
Description: IC REAL TIME CLOCK SO-8 T&R 2.5K
Description: IC REAL TIME CLOCK SO-8 T&R 2.5K
товару немає в наявності
В кошику
од. на суму грн.
| PT7C4337BUEX |
Виробник: Diodes Incorporated
Description: IC REAL TIME CLK MSOP-8 T&R 2.5K
Description: IC REAL TIME CLK MSOP-8 T&R 2.5K
товару немає в наявності
В кошику
од. на суму грн.
| PT7C4337BZEEX |
Виробник: Diodes Incorporated
Description: IC REAL TIME CLK W-DFN2030-8 T&R
Description: IC REAL TIME CLK W-DFN2030-8 T&R
товару немає в наявності
В кошику
од. на суму грн.



















