Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73714) > Сторінка 516 з 1229
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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DMT10H009SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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DMT10H009SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V |
на замовлення 71104 шт: термін постачання 21-31 дні (днів) |
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DMT10H009LCG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 12.4A/47A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: V-DFN3333-8 (Type B) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H009LCG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 12.4A/47A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: V-DFN3333-8 (Type B) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 921 шт: термін постачання 21-31 дні (днів) |
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DMT10H014LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.9A 8SOPackage / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive |
на замовлення 107500 шт: термін постачання 21-31 дні (днів) |
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DMT10H014LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.9A 8SORds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) |
на замовлення 111690 шт: термін постачання 21-31 дні (днів) |
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DMT10H009LK3-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V TO252 T&RInput Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1523 шт: термін постачання 21-31 дні (днів) |
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DMT10H072LFDF-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 4A 6UDFNInput Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H072LFDFQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V U-DFN2020Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMT10H052LFDF-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V U-DFN2020Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H025LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V SO-8 T&RInput Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H009SCG-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V V-DFN3333Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: V-DFN3333-8 (Type B) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 22000 шт: термін постачання 21-31 дні (днів) |
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| DMT10H003SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 (Type Q) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.2W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 152A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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DMT10H032SFVW-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerDI3333-8 (SWP) Type UX Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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DMT10H009SK3-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V TO252 T&RInput Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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DMT10H032LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V SO-8 T&RDrive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H032LFDF-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V U-DFN2020Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H032LFDF-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V U-DFN2020Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H032SFVW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerDI3333-8 (SWP) Type UX Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.3W (Ta) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DMT10H015SPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.3W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DMT10H015SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 54A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMT10H032LK3-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V TO252 T&RInput Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H052LFDF-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V U-DFN2020Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H015LCG-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 9.4A/34A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: V-DFN3333-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H009LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 13A/50A PWRDIInput Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| DMT10H4M5LPS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V-100V POWERDI50Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DMT10H032LDV-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 100V 18A PWRDI3333Part Status: Active Supplier Device Package: PowerDI3333-8 (Type UXC) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 100V Power - Max: 1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DMT10H032LFVW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 (SWP) Type UX Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| DMT10H009SSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V-100V SO-8 T&RDrain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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DMT10H009LH3 | Diodes Incorporated |
Description: MOSFET N-CH 100V 84A TO251Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-251 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 75 шт В кошику од. на суму грн. | ||||||||||||||
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AP2210N-3.3TRG1-50 | Diodes Incorporated |
Description: LDO CMOS LowCurr SOT23 T&R 3KVoltage - Input (Max): 13.2V Current - Quiescent (Iq): 180 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Current - Supply (Max): 15 mA Protection Features: Over Current, Over Temperature, Reverse Polarity Voltage Dropout (Max): 0.5V @ 300mA PSRR: 75dB (100Hz) Part Status: Active Control Features: Current Limit Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: SOT-23-3 Number of Regulators: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ17A-13 | Diodes Incorporated |
Description: TVS DIODE 17VWM 27.6VC SMBUnidirectional Channels: 1 Supplier Device Package: SMB Voltage - Reverse Standoff (Typ): 17V Current - Peak Pulse (10/1000µs): 21.7A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 27.6V Voltage - Breakdown (Min): 18.9V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ17A-13-F | Diodes Incorporated |
Description: TVS DIODE 17V 27.6V SMBPart Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 27.6V Voltage - Breakdown (Min): 18.9V Unidirectional Channels: 1 Supplier Device Package: SMB Voltage - Reverse Standoff (Typ): 17V Current - Peak Pulse (10/1000µs): 21.7A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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DMN10H170SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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DMN10H170SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V |
на замовлення 51045 шт: термін постачання 21-31 дні (днів) |
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AP1186K5-33G-13 | Diodes Incorporated |
Description: IC REG LINEAR 3.3V 1.5A TO263-5Current - Supply (Max): 150 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.38V @ 1.5A PSRR: 70dB (120Hz) Part Status: Obsolete Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: TO-263-5 Number of Regulators: 1 Voltage - Input (Max): 16V Current - Quiescent (Iq): 10 mA Output Configuration: Positive Operating Temperature: 0°C ~ 150°C (TJ) Current - Output: 1.5A Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBP310 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 3A GBPPackaging: Tube Package / Case: 4-SIP, GBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBP Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 2695 шт: термін постачання 21-31 дні (днів) |
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PI6C49X0202WIEX | Diodes Incorporated |
Description: IC CLK BUFFER 1:2 250MHZ 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC Part Status: Active Frequency - Max: 250 MHz |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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PI6C49X0202WIEX | Diodes Incorporated |
Description: IC CLK BUFFER 1:2 250MHZ 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC Part Status: Active Frequency - Max: 250 MHz |
на замовлення 39955 шт: термін постачання 21-31 дні (днів) |
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AP9211S-AH-HAC-7 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: U-DFN2030-6 (Type C) Fault Protection: Over Current, Over Voltage Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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AP9211S-AF-HAC-7 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: U-DFN2030-6 (Type C) Fault Protection: Over Current, Over Voltage Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ES3C-13-F | Diodes Incorporated |
Description: DIODE STANDARD 150V 3A SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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ES3C-13-F | Diodes Incorporated |
Description: DIODE STANDARD 150V 3A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
на замовлення 2680 шт: термін постачання 21-31 дні (днів) |
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| DTH8L06DNC-13 | Diodes Incorporated |
Description: DIODE GP 600V 8A TO252 T&R 2.5Current - Reverse Leakage @ Vr: 8 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-252 (Type WX) Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 70 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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DMN53D0LV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.35A SOT563Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drain to Source Voltage (Vdss): 50V Power - Max: 430mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
на замовлення 81000 шт: термін постачання 21-31 дні (днів) |
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DMN53D0LV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.35A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 82000 шт: термін постачання 21-31 дні (днів) |
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GBPC1502 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 200V 15A GBPCPackaging: Tray Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDT5100D1-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 5A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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SDT5100D1-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 5A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 9960 шт: термін постачання 21-31 дні (днів) |
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AP2121AK-2.5TRE1 | Diodes Incorporated |
Description: IC REG LINEAR 2.5V 200MA SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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AP2121AK-2.5TRE1 | Diodes Incorporated |
Description: IC REG LINEAR 2.5V 200MA SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current |
на замовлення 2430 шт: термін постачання 21-31 дні (днів) |
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AP2120N-5.0TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 5V 150MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 65dB (1kHz) Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Current |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AP2120N-5.0TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 5V 150MA SOT23-3Protection Features: Over Current Voltage Dropout (Max): 0.5V @ 150mA PSRR: 65dB (1kHz) Part Status: Active Voltage - Output (Min/Fixed): 5V Supplier Device Package: SOT-23-3 Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 50 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 3097 шт: термін постачання 21-31 дні (днів) |
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AP2125KS-1.8TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 1.8V 300MA SC-70-5Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SC-70-5 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 70db (100Hz ~ 1kHz) Voltage Dropout (Max): 0.36V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 303000 шт: термін постачання 21-31 дні (днів) |
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AP2125KS-1.8TRG1 | Diodes Incorporated |
Description: IC REG LINEAR 1.8V 300MA SC-70-5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SC-70-5 Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 70db (100Hz ~ 1kHz) Voltage Dropout (Max): 0.36V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 303000 шт: термін постачання 21-31 дні (днів) |
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BZX84C3V3TS-7-F | Diodes Incorporated |
Description: DIODE ZENER ARRAY 3.3V SOT-363Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 3 Independent Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOT-363 Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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BZX84C3V3TS-7-F | Diodes Incorporated |
Description: DIODE ZENER ARRAY 3.3V SOT-363Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 3 Independent Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOT-363 Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
на замовлення 24641 шт: термін постачання 21-31 дні (днів) |
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BC857BLP4-7B | Diodes Incorporated |
Description: TRANS PNP 45V 0.1A X2-DFN1006-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: X2-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BC857BLP4-7B | Diodes Incorporated |
Description: TRANS PNP 45V 0.1A X2-DFN1006-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: X2-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
на замовлення 5020 шт: термін постачання 21-31 дні (днів) |
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AP7343Q-12W5-7 | Diodes Incorporated |
Description: IC REG LINEAR 1.2V 300MA SOT25Number of Regulators: 1 Voltage - Input (Max): 5.25V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TA) Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 0.72V @ 300mA PSRR: 75dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.2V Supplier Device Package: SOT-25 |
на замовлення 102000 шт: термін постачання 21-31 дні (днів) |
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| DMT10H009SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 36.22 грн |
| 5000+ | 32.46 грн |
| 7500+ | 31.22 грн |
| 12500+ | 28.00 грн |
| 17500+ | 27.74 грн |
| DMT10H009SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
на замовлення 71104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.90 грн |
| 10+ | 80.08 грн |
| 100+ | 53.72 грн |
| 500+ | 39.83 грн |
| 1000+ | 36.42 грн |
| DMT10H009LCG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMT10H009LCG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 921 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.92 грн |
| 10+ | 73.44 грн |
| 100+ | 49.29 грн |
| 500+ | 36.53 грн |
| DMT10H014LSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 100V 8.9A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
на замовлення 107500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.09 грн |
| 5000+ | 28.88 грн |
| DMT10H014LSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Description: MOSFET N-CH 100V 8.9A 8SO
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
на замовлення 111690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.19 грн |
| 10+ | 65.52 грн |
| 100+ | 49.06 грн |
| 500+ | 36.37 грн |
| 1000+ | 33.26 грн |
| DMT10H009LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 1523 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.41 грн |
| 10+ | 76.91 грн |
| 100+ | 51.55 грн |
| 500+ | 38.19 грн |
| 1000+ | 34.92 грн |
| DMT10H072LFDF-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 4A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 4A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMT10H072LFDFQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 12.94 грн |
| DMT10H052LFDF-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMT10H025LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT10H009SCG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8 (Type B)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 25.89 грн |
| 4000+ | 23.71 грн |
| DMT10H003SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type Q)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V POWERDI50
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type Q)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT10H032SFVW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET BVDSS: 61V~100V POWERDI33
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 15.30 грн |
| DMT10H009SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 33.69 грн |
| 5000+ | 30.89 грн |
| DMT10H032LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT10H032LFDF-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT10H032LFDF-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMT10H032SFVW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Description: MOSFET BVDSS: 61V~100V POWERDI33
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.26 грн |
| 6000+ | 13.52 грн |
| 9000+ | 12.93 грн |
| DMT10H015SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 100V PWRDI5060
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 24.86 грн |
| 5000+ | 23.24 грн |
| DMT10H015SK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
Description: MOSFET N-CH 100V 54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 27.34 грн |
| DMT10H032LK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| DMT10H052LFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| DMT10H015LCG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: V-DFN3333-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| DMT10H009LFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 13A/50A PWRDI
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 13A/50A PWRDI
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 40.98 грн |
| DMT10H4M5LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V POWERDI50
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Description: MOSFET BVDSS: 61V-100V POWERDI50
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 69.70 грн |
| 5000+ | 64.63 грн |
| DMT10H032LDV-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 100V 18A PWRDI3333
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type UXC)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 100V 18A PWRDI3333
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type UXC)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| DMT10H032LFVW-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 61V~100V POWERDI33
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DMT10H009SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V SO-8 T&R
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
Description: MOSFET BVDSS: 61V-100V SO-8 T&R
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.83 грн |
| 5000+ | 30.11 грн |
| 12500+ | 28.72 грн |
| DMT10H009LH3 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 84A TO251
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 100V 84A TO251
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 75 шт
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| AP2210N-3.3TRG1-50 |
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Виробник: Diodes Incorporated
Description: LDO CMOS LowCurr SOT23 T&R 3K
Voltage - Input (Max): 13.2V
Current - Quiescent (Iq): 180 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Supply (Max): 15 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 75dB (100Hz)
Part Status: Active
Control Features: Current Limit
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Description: LDO CMOS LowCurr SOT23 T&R 3K
Voltage - Input (Max): 13.2V
Current - Quiescent (Iq): 180 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Supply (Max): 15 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 75dB (100Hz)
Part Status: Active
Control Features: Current Limit
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| SMBJ17A-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC SMB
Unidirectional Channels: 1
Supplier Device Package: SMB
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 21.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Description: TVS DIODE 17VWM 27.6VC SMB
Unidirectional Channels: 1
Supplier Device Package: SMB
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 21.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
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| SMBJ17A-13-F |
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Виробник: Diodes Incorporated
Description: TVS DIODE 17V 27.6V SMB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Unidirectional Channels: 1
Supplier Device Package: SMB
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 21.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: TVS DIODE 17V 27.6V SMB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 27.6V
Voltage - Breakdown (Min): 18.9V
Unidirectional Channels: 1
Supplier Device Package: SMB
Voltage - Reverse Standoff (Typ): 17V
Current - Peak Pulse (10/1000µs): 21.7A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.14 грн |
| 6000+ | 5.42 грн |
| 9000+ | 5.16 грн |
| 15000+ | 4.57 грн |
| 21000+ | 4.41 грн |
| DMN10H170SFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 14.36 грн |
| 6000+ | 12.94 грн |
| 10000+ | 12.05 грн |
| 50000+ | 10.47 грн |
| DMN10H170SFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
на замовлення 51045 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.76 грн |
| 10+ | 33.44 грн |
| 25+ | 31.22 грн |
| 100+ | 23.45 грн |
| 250+ | 21.78 грн |
| 500+ | 18.43 грн |
| 1000+ | 14.00 грн |
| AP1186K5-33G-13 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1.5A TO263-5
Current - Supply (Max): 150 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.38V @ 1.5A
PSRR: 70dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-263-5
Number of Regulators: 1
Voltage - Input (Max): 16V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 150°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 3.3V 1.5A TO263-5
Current - Supply (Max): 150 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.38V @ 1.5A
PSRR: 70dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-263-5
Number of Regulators: 1
Voltage - Input (Max): 16V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 150°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| GBP310 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 3A GBP
Packaging: Tube
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3A GBP
Packaging: Tube
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.49 грн |
| 35+ | 30.06 грн |
| 105+ | 24.70 грн |
| 525+ | 17.87 грн |
| 1015+ | 16.23 грн |
| 2030+ | 14.78 грн |
| PI6C49X0202WIEX |
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Виробник: Diodes Incorporated
Description: IC CLK BUFFER 1:2 250MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Part Status: Active
Frequency - Max: 250 MHz
Description: IC CLK BUFFER 1:2 250MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Part Status: Active
Frequency - Max: 250 MHz
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 90.85 грн |
| PI6C49X0202WIEX |
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Виробник: Diodes Incorporated
Description: IC CLK BUFFER 1:2 250MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Part Status: Active
Frequency - Max: 250 MHz
Description: IC CLK BUFFER 1:2 250MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Part Status: Active
Frequency - Max: 250 MHz
на замовлення 39955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 280.61 грн |
| 10+ | 177.98 грн |
| 25+ | 154.07 грн |
| 100+ | 119.31 грн |
| 250+ | 107.04 грн |
| 500+ | 99.55 грн |
| 1000+ | 91.79 грн |
| AP9211S-AH-HAC-7 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP9211S-AF-HAC-7 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ES3C-13-F |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 150V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE STANDARD 150V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ES3C-13-F |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 150V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE STANDARD 150V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 2680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.36 грн |
| 10+ | 72.23 грн |
| 25+ | 60.93 грн |
| 50+ | 50.60 грн |
| 100+ | 45.07 грн |
| DTH8L06DNC-13 |
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Виробник: Diodes Incorporated
Description: DIODE GP 600V 8A TO252 T&R 2.5
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252 (Type WX)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE GP 600V 8A TO252 T&R 2.5
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-252 (Type WX)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMN53D0LV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.35A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 430mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 50V 0.35A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 430mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.01 грн |
| 6000+ | 6.60 грн |
| 9000+ | 5.85 грн |
| 30000+ | 5.42 грн |
| 75000+ | 4.60 грн |
| DMN53D0LV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.35A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 430mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 50V 0.35A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 430mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 82000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.35 грн |
| 14+ | 21.66 грн |
| 100+ | 10.94 грн |
| 500+ | 9.10 грн |
| 1000+ | 7.08 грн |
| GBPC1502 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 200V 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| SDT5100D1-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 17.78 грн |
| 5000+ | 16.63 грн |
| 7500+ | 16.33 грн |
| SDT5100D1-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 9960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.95 грн |
| 10+ | 38.64 грн |
| 100+ | 31.33 грн |
| 500+ | 22.82 грн |
| 1000+ | 20.55 грн |
| AP2121AK-2.5TRE1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.5V 200MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current
Description: IC REG LINEAR 2.5V 200MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP2121AK-2.5TRE1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 2.5V 200MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current
Description: IC REG LINEAR 2.5V 200MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current
на замовлення 2430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.25 грн |
| 10+ | 39.32 грн |
| 25+ | 36.92 грн |
| 100+ | 28.28 грн |
| 250+ | 26.27 грн |
| 500+ | 22.36 грн |
| 1000+ | 17.59 грн |
| AP2120N-5.0TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 5V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 5V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.57 грн |
| AP2120N-5.0TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 5V 150MA SOT23-3
Protection Features: Over Current
Voltage Dropout (Max): 0.5V @ 150mA
PSRR: 65dB (1kHz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 50 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 5V 150MA SOT23-3
Protection Features: Over Current
Voltage Dropout (Max): 0.5V @ 150mA
PSRR: 65dB (1kHz)
Part Status: Active
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 50 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 3097 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.41 грн |
| 50+ | 6.04 грн |
| 57+ | 5.31 грн |
| 100+ | 4.22 грн |
| 250+ | 3.85 грн |
| 500+ | 3.63 грн |
| 1000+ | 3.39 грн |
| AP2125KS-1.8TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.8V 300MA SC-70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70db (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 300MA SC-70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70db (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 303000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.07 грн |
| 9000+ | 6.49 грн |
| AP2125KS-1.8TRG1 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.8V 300MA SC-70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70db (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 300MA SC-70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 70db (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 303000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.03 грн |
| 27+ | 11.55 грн |
| 30+ | 10.20 грн |
| 50+ | 8.83 грн |
| 100+ | 8.20 грн |
| BZX84C3V3TS-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER ARRAY 3.3V SOT-363
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER ARRAY 3.3V SOT-363
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.75 грн |
| 9000+ | 6.42 грн |
| BZX84C3V3TS-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER ARRAY 3.3V SOT-363
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER ARRAY 3.3V SOT-363
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 24641 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.27 грн |
| 15+ | 20.98 грн |
| 25+ | 17.42 грн |
| 50+ | 14.25 грн |
| 100+ | 12.46 грн |
| BC857BLP4-7B |
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Виробник: Diodes Incorporated
Description: TRANS PNP 45V 0.1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A X2-DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| BC857BLP4-7B |
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Виробник: Diodes Incorporated
Description: TRANS PNP 45V 0.1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 5020 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.68 грн |
| 12+ | 26.42 грн |
| 100+ | 16.92 грн |
| 500+ | 12.02 грн |
| 1000+ | 10.77 грн |
| 2000+ | 9.72 грн |
| 5000+ | 8.44 грн |
| AP7343Q-12W5-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 1.2V 300MA SOT25
Number of Regulators: 1
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.72V @ 300mA
PSRR: 75dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: SOT-25
Description: IC REG LINEAR 1.2V 300MA SOT25
Number of Regulators: 1
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.72V @ 300mA
PSRR: 75dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: SOT-25
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.81 грн |
| 6000+ | 6.88 грн |
| 9000+ | 6.56 грн |
| 15000+ | 5.82 грн |
| 21000+ | 5.62 грн |
| 30000+ | 5.43 грн |
| 75000+ | 4.94 грн |

























