Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73731) > Сторінка 674 з 1229
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BFS17NQTA | Diodes Incorporated |
Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 310mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 11V DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V Frequency - Transition: 3.2GHz Supplier Device Package: SOT-23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
DMP3035SFG-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
DMP3035SFG-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V |
на замовлення 1275 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1N4148WSQ-13-F | Diodes Incorporated |
Description: DIODE STANDARD 75V 150MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V Qualification: AEC-Q101 |
на замовлення 413 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
FMC500001Q | Diodes Incorporated |
Description: XTAL OSC XO 125.0000MHZ CMOS SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.081" L x 0.063" W (2.05mm x 1.60mm) Mounting Type: Surface Mount Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V Frequency: 125 MHz Base Resonator: Crystal |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
PI6ULS5V9515AZEEX | Diodes Incorporated |
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFNSupplier Device Package: 8-TDFN (2x3) Data Rate (Max): 400kHz Current - Supply: 1.7mA Applications: I2C Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 85°C Input: 2-Wire Bus Type: Buffer, ReDriver Output: 2-Wire Bus Mounting Type: Surface Mount Number of Channels: 2 Delay Time: 113ns Package / Case: 8-WFDFN Exposed Pad Packaging: Tape & Reel (TR) Capacitance - Input: 6 pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
PI6ULS5V9515AZEEX | Diodes Incorporated |
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFNCapacitance - Input: 6 pF Supplier Device Package: 8-TDFN (2x3) Data Rate (Max): 400kHz Current - Supply: 1.7mA Applications: I2C Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 85°C Input: 2-Wire Bus Type: Buffer, ReDriver Output: 2-Wire Bus Mounting Type: Surface Mount Number of Channels: 2 Delay Time: 113ns Package / Case: 8-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1578 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
PI6ULS5V9517BZEEX | Diodes Incorporated |
Description: INTERFACE ULS W-DFN2030-8Supplier Device Package: 8-TDFN (2x3) Data Rate (Max): 400kHz Current - Supply: 500µA Applications: I2C Voltage - Supply: 0.8V ~ 5.5V Input: 2-Wire Bus Type: Buffer, ReDriver Output: 2-Wire Bus Mounting Type: Surface Mount Number of Channels: 2 Delay Time: 169ns Package / Case: 8-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
PI3DBV10ZEEX | Diodes Incorporated |
Description: IC VIDEO SWITCH 2X1 12TDFNPackaging: Tape & Reel (TR) Number of Channels: 1 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Voltage - Supply, Single (V+): 3V ~ 3.6V Supplier Device Package: 12-TDFN (3.5x3) -3db Bandwidth: 500MHz On-State Resistance (Max): 8Ohm Applications: Video Mounting Type: Surface Mount Package / Case: 12-WFDFN Exposed Pad |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SDM1M40LP8Q-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 1A UDFN16082Packaging: Tape & Reel (TR) Package / Case: 2-UFDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.4 ns Technology: Schottky Capacitance @ Vr, F: 25pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: U-DFN1608-2 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SDM1M40LP8Q-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 1A UDFN16082Packaging: Cut Tape (CT) Package / Case: 2-UFDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.4 ns Technology: Schottky Capacitance @ Vr, F: 25pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: U-DFN1608-2 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 29848 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
D50V0S1U2LP1608-7 | Diodes Incorporated |
Description: TVS DIODE 50VWM 90VC UDFN16082Packaging: Cut Tape (CT) Package / Case: 2-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 126pF @ 1MHz Current - Peak Pulse (10/1000µs): 15A Voltage - Reverse Standoff (Typ): 50V Supplier Device Package: U-DFN1608-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 56V Voltage - Clamping (Max) @ Ipp: 90V Power Line Protection: No |
на замовлення 57300 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SBR1M100BLP-7 | Diodes Incorporated |
Description: BRIDGE RECT 1P 100V 1A DFN3030Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 25 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A Current - Average Rectified (Io): 1 A Voltage - Peak Reverse (Max): 100 V Grade: Automotive Supplier Device Package: U-DFN3030-4 Technology: Super Barrier Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-PowerUDFN Packaging: Tape & Reel (TR) |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SBR1M100BLP-7 | Diodes Incorporated |
Description: BRIDGE RECT 1P 100V 1A DFN3030Packaging: Cut Tape (CT) Package / Case: 4-PowerUDFN Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Super Barrier Supplier Device Package: U-DFN3030-4 Grade: Automotive Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 22506 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
1.5KE82A-B | Diodes Incorporated |
Description: TVS DIODE 70.1VWM 113VC DO201Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.3A Voltage - Reverse Standoff (Typ): 70.1V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.9V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DSC06A065LP-13 | Diodes Incorporated |
Description: SIC SBD 650V~1000V T-DFN8080-5 T Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 295pF @ 100mV, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DFN8080 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DSC06A065LP-13 | Diodes Incorporated |
Description: SIC SBD 650V~1000V T-DFN8080-5 T Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 295pF @ 100mV, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DFN8080 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
B250AE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 50V 2A SMACurrent - Reverse Leakage @ Vr: 100 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMA Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 75pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
FL2500094 | Diodes Incorporated |
Description: CRYSTAL 25.0000MHZ 8PF SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (3.2x2.5) Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 25 MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
FL2500094 | Diodes Incorporated |
Description: CRYSTAL 25.0000MHZ 8PF SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Load Capacitance: 8pF Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±10ppm Frequency Tolerance: ±10ppm Operating Mode: Fundamental Supplier Device Package: 4-SMD (3.2x2.5) Height - Seated (Max): 0.031" (0.78mm) ESR (Equivalent Series Resistance): 60 Ohms Frequency: 25 MHz |
на замовлення 2205 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FZT956QTA | Diodes Incorporated |
Description: TRANS PNP 200V 2A SOT-223-3Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Power - Max: 1.6 W Voltage - Collector Emitter Breakdown (Max): 200 V Current - Collector (Ic) (Max): 2 A Grade: Automotive Supplier Device Package: SOT-223-3 Frequency - Transition: 110MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
HBS410-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 4A HBSPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: HBS Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 642500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
HBS410-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 4A HBSPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: HBS Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 644857 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
HBS610-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 6A HBSCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A Current - Average Rectified (Io): 6 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: HBS Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
HBS610-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 6A HBSCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A Current - Average Rectified (Io): 6 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: HBS Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 910 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMT6017LFDF-7 | Diodes Incorporated |
Description: MOSFET N-CH 65V 8.1A 6UDFNFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Drain to Source Voltage (Vdss): 65 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 800mW (Ta) |
на замовлення 2656 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMT6013LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
DMT6013LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 10A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMT6017LDV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 25.3 PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
DMT6017LDV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 25.3 PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) |
на замовлення 1758 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DMP4016SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI5060-8 (Type UX) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.9W (Ta), 119W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
DMP4016SPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 (Type UX) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.9W (Ta), 119W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| DMT26M0LDG-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Supplier Device Package: PowerDI3333-8 (Type F) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT26M0LDG-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA Supplier Device Package: PowerDI3333-8 (Type F) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
|
|
DMP3056L-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 4.3A SOT23Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 1.38W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
DMP3056L-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 4.3A SOT23Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 1.38W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| ZXTD2090E6TA | Diodes Incorporated |
Description: TRANS 2NPN DUAL 50V 1A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Frequency - Transition: 215MHz Supplier Device Package: SOT-26 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| ZXTD2090E6TA | Diodes Incorporated |
Description: TRANS 2NPN DUAL 50V 1A SOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Frequency - Transition: 215MHz Supplier Device Package: SOT-26 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
AP22971GD8-7 | Diodes Incorporated |
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19Packaging: Tape & Reel (TR) Features: Load Discharge, Power Good, Slew Rate Controlled Package / Case: 8-XFBGA, WLBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: High Side Rds On (Typ): 6.7mOhm Input Type: Non-Inverting Voltage - Load: 0.65V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WLP (1.88x0.88) Fault Protection: Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
AP22971GD8-7 | Diodes Incorporated |
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19Packaging: Cut Tape (CT) Features: Load Discharge, Power Good, Slew Rate Controlled Package / Case: 8-XFBGA, WLBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: High Side Rds On (Typ): 6.7mOhm Input Type: Non-Inverting Voltage - Load: 0.65V ~ 3.6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WLP (1.88x0.88) Fault Protection: Over Temperature |
на замовлення 2930 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PI6CB332004AZLFEX-13R | Diodes Incorporated |
Description: ICPackaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: HCSL Type: Fanout Buffer (Distribution) Input: Clock Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.97V ~ 3.63V Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 28-QFN (4x4) Frequency - Max: 400 MHz |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PI6CB332004AZLFEX-13R | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: 28-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: HCSL Type: Fanout Buffer (Distribution) Input: Clock Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.97V ~ 3.63V Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 28-QFN (4x4) Frequency - Max: 400 MHz |
на замовлення 6391 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SPX2940U-L-5-0 | Diodes Incorporated |
Description: IC REG LINEAR 5V 1A TO220-3Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage Voltage Dropout (Max): 0.28V @ 1A Voltage - Output (Min/Fixed): 5V Supplier Device Package: TO-220-3 Number of Regulators: 1 Voltage - Input (Max): 16V Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 1A Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
|
MMBTA64-7-F-W | Diodes Incorporated |
Description: GENERAL PURPOSE TRANSISTOR SOT23Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
MMBTA63-7-F-W | Diodes Incorporated |
Description: TRANS PNP DARL 30V 0.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
MMBTA63-7-F-W | Diodes Incorporated |
Description: TRANS PNP DARL 30V 0.5A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
B230BE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 30V 2A SMBCurrent - Reverse Leakage @ Vr: 100 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 93pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
AP9101CAK-CLTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT25Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-25 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AP9101CAK6-ALTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
|
|
MMBT4401-13-F-W | Diodes Incorporated |
Description: TRANS NPN 40V 0.6A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 310 mW |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
MMBT4401-13-F-W | Diodes Incorporated |
Description: TRANS NPN 40V 0.6A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 310 mW |
на замовлення 99968 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FN6600058 | Diodes Incorporated |
Description: XTAL OSC XO 66.0000MHZ CMOSPackaging: Tape & Reel (TR) Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 66 MHz Base Resonator: Crystal |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FN6600058 | Diodes Incorporated |
Description: XTAL OSC XO 66.0000MHZ CMOSPackaging: Cut Tape (CT) Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 66 MHz Base Resonator: Crystal |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
FN6600061 | Diodes Incorporated |
Description: XTAL OSC XO 66.0000MHZ CMOSPackaging: Tape & Reel (TR) Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 66 MHz Base Resonator: Crystal |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
|
ZXT951KQTC | Diodes Incorporated |
Description: TRANS PNP 60V 6A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 120MHz Supplier Device Package: TO-252 (DPAK) Grade: Automotive Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2.1 W Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
ZXT951KQTC | Diodes Incorporated |
Description: TRANS PNP 60V 6A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 120MHz Supplier Device Package: TO-252 (DPAK) Grade: Automotive Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2.1 W Qualification: AEC-Q101 |
на замовлення 2304 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BAV16W-7-F-W | Diodes Incorporated |
Description: FAST SWITCHING DIODE SOD123 T&RPackaging: Tape & Reel (TR) |
на замовлення 129000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MURS360BQ | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MURS360Q | Diodes Incorporated |
Description: ICPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC (Type C) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
AP68355QSP-13 | Diodes Incorporated |
Description: DCDC Cont HV Buck SO-8EP T&R 4KPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3.5A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 80V Topology: Buck Supplier Device Package: 8-SO-EP Synchronous Rectifier: No Voltage - Output (Max): 50V Voltage - Input (Min): 5.5V Voltage - Output (Min/Fixed): 1.2V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| BFS17NQTA |
![]() |
Виробник: Diodes Incorporated
Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
товару немає в наявності
В кошику
од. на суму грн.
| DMP3035SFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMP3035SFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.62 грн |
| 10+ | 39.93 грн |
| 100+ | 25.96 грн |
| 500+ | 18.71 грн |
| 1000+ | 16.88 грн |
| 1N4148WSQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
на замовлення 413 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 38+ | 8.08 грн |
| 46+ | 6.61 грн |
| 53+ | 5.37 грн |
| 100+ | 4.65 грн |
| FMC500001Q |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.081" L x 0.063" W (2.05mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Frequency: 125 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 125.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.081" L x 0.063" W (2.05mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Frequency: 125 MHz
Base Resonator: Crystal
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PI6ULS5V9515AZEEX |
![]() |
Виробник: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 1.7mA
Applications: I2C
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 113ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Capacitance - Input: 6 pF
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 1.7mA
Applications: I2C
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 113ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Capacitance - Input: 6 pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PI6ULS5V9515AZEEX |
![]() |
Виробник: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Capacitance - Input: 6 pF
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 1.7mA
Applications: I2C
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 113ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Capacitance - Input: 6 pF
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 1.7mA
Applications: I2C
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 113ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1578 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.38 грн |
| PI6ULS5V9517BZEEX |
![]() |
Виробник: Diodes Incorporated
Description: INTERFACE ULS W-DFN2030-8
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 500µA
Applications: I2C
Voltage - Supply: 0.8V ~ 5.5V
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 169ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: INTERFACE ULS W-DFN2030-8
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 500µA
Applications: I2C
Voltage - Supply: 0.8V ~ 5.5V
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 169ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PI3DBV10ZEEX |
![]() |
Виробник: Diodes Incorporated
Description: IC VIDEO SWITCH 2X1 12TDFN
Packaging: Tape & Reel (TR)
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 12-TDFN (3.5x3)
-3db Bandwidth: 500MHz
On-State Resistance (Max): 8Ohm
Applications: Video
Mounting Type: Surface Mount
Package / Case: 12-WFDFN Exposed Pad
Description: IC VIDEO SWITCH 2X1 12TDFN
Packaging: Tape & Reel (TR)
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 12-TDFN (3.5x3)
-3db Bandwidth: 500MHz
On-State Resistance (Max): 8Ohm
Applications: Video
Mounting Type: Surface Mount
Package / Case: 12-WFDFN Exposed Pad
товару немає в наявності
В кошику
од. на суму грн.
| SDM1M40LP8Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Tape & Reel (TR)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Tape & Reel (TR)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.46 грн |
| 20000+ | 4.83 грн |
| SDM1M40LP8Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
на замовлення 29848 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 17+ | 17.96 грн |
| 100+ | 11.35 грн |
| 500+ | 7.97 грн |
| 1000+ | 7.10 грн |
| 2000+ | 6.37 грн |
| 5000+ | 5.48 грн |
| D50V0S1U2LP1608-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 50VWM 90VC UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 126pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 50V
Supplier Device Package: U-DFN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56V
Voltage - Clamping (Max) @ Ipp: 90V
Power Line Protection: No
Description: TVS DIODE 50VWM 90VC UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 126pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 50V
Supplier Device Package: U-DFN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56V
Voltage - Clamping (Max) @ Ipp: 90V
Power Line Protection: No
на замовлення 57300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| 19+ | 16.08 грн |
| 100+ | 6.50 грн |
| 500+ | 5.61 грн |
| 1000+ | 5.01 грн |
| 2000+ | 4.98 грн |
| 5000+ | 4.87 грн |
| SBR1M100BLP-7 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1A DFN3030
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: U-DFN3030-4
Technology: Super Barrier
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-PowerUDFN
Packaging: Tape & Reel (TR)
Description: BRIDGE RECT 1P 100V 1A DFN3030
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: U-DFN3030-4
Technology: Super Barrier
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-PowerUDFN
Packaging: Tape & Reel (TR)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.43 грн |
| 6000+ | 16.74 грн |
| 9000+ | 15.71 грн |
| 15000+ | 14.44 грн |
| SBR1M100BLP-7 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Cut Tape (CT)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Cut Tape (CT)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
на замовлення 22506 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.87 грн |
| 10+ | 44.31 грн |
| 100+ | 29.99 грн |
| 500+ | 21.81 грн |
| 1000+ | 19.76 грн |
| 1.5KE82A-B |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DSC06A065LP-13 |
Виробник: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DSC06A065LP-13 |
Виробник: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 348.01 грн |
| 10+ | 221.30 грн |
| 25+ | 191.05 грн |
| 50+ | 161.70 грн |
| 100+ | 146.88 грн |
| B250AE-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 2A SMA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 2A SMA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FL2500094 |
![]() |
Виробник: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FL2500094 |
![]() |
Виробник: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
на замовлення 2205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.84 грн |
| 10+ | 31.25 грн |
| 25+ | 29.59 грн |
| 50+ | 26.61 грн |
| 100+ | 25.51 грн |
| 250+ | 24.12 грн |
| 500+ | 22.74 грн |
| 1000+ | 21.80 грн |
| FZT956QTA |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 200V 2A SOT-223-3
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 2 A
Grade: Automotive
Supplier Device Package: SOT-223-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Description: TRANS PNP 200V 2A SOT-223-3
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 2 A
Grade: Automotive
Supplier Device Package: SOT-223-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.19 грн |
| 10+ | 77.44 грн |
| 100+ | 52.12 грн |
| 500+ | 38.73 грн |
| HBS410-13 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 642500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 18.76 грн |
| 5000+ | 16.62 грн |
| 7500+ | 15.89 грн |
| 12500+ | 14.14 грн |
| 17500+ | 13.68 грн |
| 25000+ | 13.24 грн |
| HBS410-13 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 644857 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.46 грн |
| 10+ | 44.76 грн |
| 100+ | 29.21 грн |
| 500+ | 21.15 грн |
| 1000+ | 19.14 грн |
| HBS610-13 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: HBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: HBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| HBS610-13 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: HBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: HBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 910 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.30 грн |
| 10+ | 49.66 грн |
| 100+ | 32.61 грн |
| 500+ | 23.72 грн |
| DMT6017LFDF-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Description: MOSFET N-CH 65V 8.1A 6UDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
на замовлення 2656 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.08 грн |
| 10+ | 32.30 грн |
| 100+ | 20.85 грн |
| 500+ | 14.94 грн |
| 1000+ | 13.45 грн |
| DMT6013LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT6013LSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.43 грн |
| 10+ | 33.59 грн |
| 100+ | 21.73 грн |
| 500+ | 15.60 грн |
| 1000+ | 14.05 грн |
| DMT6017LDV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMT6017LDV-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
на замовлення 1758 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.00 грн |
| 10+ | 52.53 грн |
| 100+ | 34.71 грн |
| 500+ | 25.39 грн |
| 1000+ | 23.08 грн |
| DMP4016SPSW-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 31V~40V POWERDI506
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMP4016SPSWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Description: MOSFET BVDSS: 31V~40V POWERDI506
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT26M0LDG-7 |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT26M0LDG-13 |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMP3056L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 4.3A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMP3056L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Description: MOSFET P-CH 30V 4.3A SOT23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.11 грн |
| 12+ | 25.66 грн |
| ZXTD2090E6TA |
Виробник: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 29.77 грн |
| ZXTD2090E6TA |
Виробник: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.22 грн |
| 10+ | 69.67 грн |
| 25+ | 58.72 грн |
| 50+ | 48.71 грн |
| 100+ | 43.31 грн |
| AP22971GD8-7 |
![]() |
Виробник: Diodes Incorporated
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP22971GD8-7 |
![]() |
Виробник: Diodes Incorporated
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
на замовлення 2930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 12+ | 26.42 грн |
| 25+ | 23.61 грн |
| 50+ | 20.57 грн |
| 100+ | 19.25 грн |
| PI6CB332004AZLFEX-13R |
![]() |
Виробник: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3500+ | 188.98 грн |
| PI6CB332004AZLFEX-13R |
![]() |
Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
на замовлення 6391 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 347.23 грн |
| 10+ | 253.91 грн |
| 25+ | 233.65 грн |
| 50+ | 207.85 грн |
| 100+ | 198.45 грн |
| SPX2940U-L-5-0 |
![]() |
Виробник: Diodes Incorporated
Description: IC REG LINEAR 5V 1A TO220-3
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Voltage Dropout (Max): 0.28V @ 1A
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 16V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Description: IC REG LINEAR 5V 1A TO220-3
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Voltage Dropout (Max): 0.28V @ 1A
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 16V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MMBTA64-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBTA63-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP DARL 30V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: AEC-Q101
Description: TRANS PNP DARL 30V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBTA63-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP DARL 30V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: AEC-Q101
Description: TRANS PNP DARL 30V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| B230BE-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 2A SMB
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 2A SMB
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP9101CAK-CLTRG1 |
![]() |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| AP9101CAK6-ALTRG1 |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBT4401-13-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 1.66 грн |
| 30000+ | 1.35 грн |
| MMBT4401-13-F-W |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
на замовлення 99968 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.97 грн |
| 46+ | 6.57 грн |
| 57+ | 5.37 грн |
| 65+ | 4.38 грн |
| 100+ | 3.78 грн |
| FN6600058 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 61.72 грн |
| 2000+ | 56.98 грн |
| 3000+ | 55.59 грн |
| 5000+ | 50.58 грн |
| 7000+ | 49.55 грн |
| 10000+ | 48.49 грн |
| 12000+ | 47.17 грн |
| FN6600058 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.06 грн |
| 10+ | 78.65 грн |
| 25+ | 74.42 грн |
| 50+ | 66.94 грн |
| 100+ | 64.18 грн |
| 250+ | 60.69 грн |
| 500+ | 57.23 грн |
| FN6600061 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ZXT951KQTC |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 60V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
Description: TRANS PNP 60V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ZXT951KQTC |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
Description: TRANS PNP 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
на замовлення 2304 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.79 грн |
| 10+ | 108.16 грн |
| 100+ | 73.93 грн |
| 500+ | 55.63 грн |
| 1000+ | 51.81 грн |
| BAV16W-7-F-W |
![]() |
Виробник: Diodes Incorporated
Description: FAST SWITCHING DIODE SOD123 T&R
Packaging: Tape & Reel (TR)
Description: FAST SWITCHING DIODE SOD123 T&R
Packaging: Tape & Reel (TR)
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.44 грн |
| 6000+ | 1.35 грн |
| MURS360BQ |
![]() |
Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MURS360Q |
![]() |
Виробник: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (Type C)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (Type C)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.54 грн |
| 10+ | 42.19 грн |
| 25+ | 35.23 грн |
| 50+ | 29.04 грн |
| 100+ | 25.62 грн |
| AP68355QSP-13 |
![]() |
Виробник: Diodes Incorporated
Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 80V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: No
Voltage - Output (Max): 50V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Qualification: AEC-Q100
Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 80V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: No
Voltage - Output (Max): 50V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.


























