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IRFP4568PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1757 шт:
термін постачання 21-30 дні (днів)
25+236.86 грн
Мінімальне замовлення: 25
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TT251N12KOFHPSA1 TT251N12KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE787EB8C9E469&compId=TT251N18KOF.pdf?ci_sign=3a12e8551cff06ea6af1b7da4fcd294bd77f4081 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 251A; BG-PB50-1; screw
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 251A
Semiconductor structure: double series
Gate current: 300mA
Max. forward impulse current: 9.1kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
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IPP041N12N3GXKSA1 IPP041N12N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7293DEAA811C&compId=IPP041N12N3G-DTE.pdf?ci_sign=1cc97405361528b7e9c295ad1d3fccf8117bba59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
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IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
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SPD03N50C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 38W
Technology: CoolMOS™
Pulsed drain current: 9.6A
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SPP08N80C3XKSA1 INFINEON TECHNOLOGIES SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
50+94.91 грн
Мінімальне замовлення: 50
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6EDL04N02PR 6EDL04N02PR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE79597E2A9163A8747&compId=6EDL04N02PR.pdf?ci_sign=8bd3da517352d4c6ba4d0d0ba3a732ae80bcef92 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 10...17.5V
Mounting: SMD
Kind of package: reel; tape
Protection: anti-overload OPP; undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
Topology: MOSFET three-phase bridge
Voltage class: 200V
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IR2085STRPBF IR2085STRPBF INFINEON TECHNOLOGIES Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Operating temperature: -40...125°C
Power: 1W
Supply voltage: 10...15V DC
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AUIR2085STR AUIR2085STR INFINEON TECHNOLOGIES auir2085s.pdf?fileId=5546d462533600a4015355a82609133f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Power: 625mW
Supply voltage: 10...15V DC
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BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2C1BE091BC11C&compId=BSC035N10NS5-DTE.pdf?ci_sign=589da9a4f76ac36f6caf01e2ad3007e47efb0526 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BSO207PHXUMA1 BSO207PHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9201B98D6931CC&compId=BSO207PHXUMA1-dte.pdf?ci_sign=2811562156a4c4d38b1a34d9d8a1b5a7805321a2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -5A
на замовлення 2211 шт:
термін постачання 21-30 дні (днів)
22+18.98 грн
23+17.32 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BSO211PHXUMA1 BSO211PHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9204080D26B1CC&compId=BSO211PHXUMA1-dte.pdf?ci_sign=da04bb6283d5de44bff6ec37f2de7d95f13433e2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -4.6A
на замовлення 2420 шт:
термін постачання 21-30 дні (днів)
18+23.93 грн
19+20.23 грн
25+18.70 грн
53+17.17 грн
100+17.09 грн
145+16.25 грн
Мінімальне замовлення: 18
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BSO201SPHXUMA1 BSO201SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF58F3DF29DF1CC&compId=BSO201SPH-DTE.pdf?ci_sign=bd493f72922d454f140551e0cbd8277f6d58d784 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -12A
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BSO203PHXUMA1 BSO203PHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA915F81DAB191CC&compId=BSO203PHXUMA1-dte.pdf?ci_sign=38ed271d24bb707e96be43cb3cb20d02f55b30a9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
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BSO203SPHXUMA1 BSO203SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA91611F5B4851CC&compId=BSO203SPHXUMA1-dte.pdf?ci_sign=f36b40706fda76bb40b78ac4bb21317193f2aadb Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
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BSO080P03SHXUMA1 BSO080P03SHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA914D705F5351CC&compId=BSO080P03SHXUMA1-DTE.PDF?ci_sign=070dfb264d8f488a2ab88956d2ea39533118f6c5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -12.6A
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BSO110N03MSGXUMA1 BSO110N03MSGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F211A43A7CC11C&compId=BSO110N03MSG-DTE.pdf?ci_sign=e98e6964477fdd36746c158d1337fff9d86b6934 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 12.1A
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BSO303SPHXUMA1 BSO303SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9209F3CB13F1CC&compId=BSO303SPHXUMA1-dte.pdf?ci_sign=81198fd7aed0081e5b6b98687ef88223814de38a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7.2A
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BSO033N03MSGXUMA1 BSO033N03MSGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F1D7BEDEADE11C&compId=BSO033N03MSG-dte.pdf?ci_sign=5e1efb88a7677ffd6bc07010da9d28e08bc4dde9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 22A
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BSO301SPHXUMA1 BSO301SPHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA920504157491CC&compId=BSO301SPHXUMA1-dte.pdf?ci_sign=ed7f73f3f0a6fd6bfeee1d5c5065c9159df1b205 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -12.6A
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BSO613SPVGXUMA1 BSO613SPVGXUMA1 INFINEON TECHNOLOGIES Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Case: SO8
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Drain current: -3.44A
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BFR183E6327HTSA1 INFINEON TECHNOLOGIES bfr183.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426a1b8f80656 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+5.78 грн
Мінімальне замовлення: 3000
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IRFR2607ZTRPBF IRFR2607ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCF1A1DF6F75EA&compId=IRFR2607ZTRPBF.pdf?ci_sign=b0073f87bd84f3db9140de5fe9dcde8776a98707 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 45A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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XMC750 WATT MOTOR CONTROL KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
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BAT5404WH6327XTSA1 BAT5404WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
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IRF7328TRPBFXTMA1 INFINEON TECHNOLOGIES Category: Multi channel transistors
Description: Transistor: P-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
4000+40.36 грн
Мінімальне замовлення: 4000
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TLE92108231QXXUMA1 INFINEON TECHNOLOGIES Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979 Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Operating voltage: 6...28V DC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
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TLE92108232QXXUMA1 INFINEON TECHNOLOGIES Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Operating voltage: 6...28V DC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
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ETD630N16P60HPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF542F7242CF8BF&compId=ETD630N16P60_ETT630N16P60.pdf?ci_sign=ad83636680462f41f1cb1c901a1d23ec4567dd0f Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 700A
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ETD630N18P60HPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDF91B47EFD3A16E0D6&compId=ETD630N18P60HPSA1.pdf?ci_sign=b68fcf03398e801cfbc0278be936e6ea25616dc5 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 700A
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ETT630N16P60HPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF542F7242CF8BF&compId=ETD630N16P60_ETT630N16P60.pdf?ci_sign=ad83636680462f41f1cb1c901a1d23ec4567dd0f Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPB037N06N3GATMA1 IPB037N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E74A0389411C&compId=IPB037N06N3G-DTE.pdf?ci_sign=1cbda32d942d894f603cf1626a1387244c7938ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IRF7831TRPBF IRF7831TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AC3DEBF7D7F1A303005056AB0C4F&compId=irf7831pbf.pdf?ci_sign=aa160b08d5ee14515aaafe01f33ea6efccd4b057 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPP410N30NAKSA1 IPP410N30NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC940FD466611C&compId=IPP410N30N-DTE.pdf?ci_sign=91131cadec2f63016d12e8ee56b378c8247df703 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Drain current: 44A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 300V
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+681.68 грн
3+392.36 грн
7+370.91 грн
В кошику  од. на суму  грн.
IRFP4568PBFXKMA1 Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1757 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+236.86 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
TT251N12KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE787EB8C9E469&compId=TT251N18KOF.pdf?ci_sign=3a12e8551cff06ea6af1b7da4fcd294bd77f4081
TT251N12KOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 251A; BG-PB50-1; screw
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 251A
Semiconductor structure: double series
Gate current: 300mA
Max. forward impulse current: 9.1kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
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IPP041N12N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7293DEAA811C&compId=IPP041N12N3G-DTE.pdf?ci_sign=1cc97405361528b7e9c295ad1d3fccf8117bba59
IPP041N12N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
товару немає в наявності
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IPI041N12N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e
IPI041N12N3GAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
товару немає в наявності
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SPD03N50C3ATMA1 Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 38W
Technology: CoolMOS™
Pulsed drain current: 9.6A
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SPP08N80C3XKSA1 SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+94.91 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
6EDL04N02PR pVersion=0046&contRep=ZT&docId=005056AB752F1EE79597E2A9163A8747&compId=6EDL04N02PR.pdf?ci_sign=8bd3da517352d4c6ba4d0d0ba3a732ae80bcef92
6EDL04N02PR
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 10...17.5V
Mounting: SMD
Kind of package: reel; tape
Protection: anti-overload OPP; undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
Topology: MOSFET three-phase bridge
Voltage class: 200V
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IR2085STRPBF Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828
IR2085STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Operating temperature: -40...125°C
Power: 1W
Supply voltage: 10...15V DC
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AUIR2085STR auir2085s.pdf?fileId=5546d462533600a4015355a82609133f
AUIR2085STR
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Power: 625mW
Supply voltage: 10...15V DC
товару немає в наявності
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BSC035N10NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2C1BE091BC11C&compId=BSC035N10NS5-DTE.pdf?ci_sign=589da9a4f76ac36f6caf01e2ad3007e47efb0526
BSC035N10NS5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BSO207PHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9201B98D6931CC&compId=BSO207PHXUMA1-dte.pdf?ci_sign=2811562156a4c4d38b1a34d9d8a1b5a7805321a2
BSO207PHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -5A
на замовлення 2211 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+18.98 грн
23+17.32 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BSO211PHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9204080D26B1CC&compId=BSO211PHXUMA1-dte.pdf?ci_sign=da04bb6283d5de44bff6ec37f2de7d95f13433e2
BSO211PHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -4.6A
на замовлення 2420 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.93 грн
19+20.23 грн
25+18.70 грн
53+17.17 грн
100+17.09 грн
145+16.25 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSO201SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF58F3DF29DF1CC&compId=BSO201SPH-DTE.pdf?ci_sign=bd493f72922d454f140551e0cbd8277f6d58d784
BSO201SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -12A
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BSO203PHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA915F81DAB191CC&compId=BSO203PHXUMA1-dte.pdf?ci_sign=38ed271d24bb707e96be43cb3cb20d02f55b30a9
BSO203PHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
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BSO203SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA91611F5B4851CC&compId=BSO203SPHXUMA1-dte.pdf?ci_sign=f36b40706fda76bb40b78ac4bb21317193f2aadb
BSO203SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -7A
товару немає в наявності
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BSO080P03SHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA914D705F5351CC&compId=BSO080P03SHXUMA1-DTE.PDF?ci_sign=070dfb264d8f488a2ab88956d2ea39533118f6c5
BSO080P03SHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -12.6A
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BSO110N03MSGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F211A43A7CC11C&compId=BSO110N03MSG-DTE.pdf?ci_sign=e98e6964477fdd36746c158d1337fff9d86b6934
BSO110N03MSGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 12.1A
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BSO303SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9209F3CB13F1CC&compId=BSO303SPHXUMA1-dte.pdf?ci_sign=81198fd7aed0081e5b6b98687ef88223814de38a
BSO303SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7.2A
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BSO033N03MSGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F1D7BEDEADE11C&compId=BSO033N03MSG-dte.pdf?ci_sign=5e1efb88a7677ffd6bc07010da9d28e08bc4dde9
BSO033N03MSGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 22A
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BSO301SPHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA920504157491CC&compId=BSO301SPHXUMA1-dte.pdf?ci_sign=ed7f73f3f0a6fd6bfeee1d5c5065c9159df1b205
BSO301SPHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Mounting: SMD
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.79W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -12.6A
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BSO613SPVGXUMA1 Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c
BSO613SPVGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Case: SO8
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -13.8A
Drain-source voltage: -60V
Drain current: -3.44A
товару немає в наявності
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BFR183E6327HTSA1 bfr183.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426a1b8f80656
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+5.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFR2607ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCF1A1DF6F75EA&compId=IRFR2607ZTRPBF.pdf?ci_sign=b0073f87bd84f3db9140de5fe9dcde8776a98707
IRFR2607ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 45A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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XMC750 WATT MOTOR CONTROL KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
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BAT5404WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5404WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
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IRF7328TRPBFXTMA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+40.36 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
TLE92108231QXXUMA1 Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Operating voltage: 6...28V DC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
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TLE92108232QXXUMA1 Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; motor controller; VQFN48; 100mA; 6÷28VDC
Operating voltage: 6...28V DC
Output current: 0.1A
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Mounting: SMD
Case: VQFN48
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ETD630N16P60HPSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF542F7242CF8BF&compId=ETD630N16P60_ETT630N16P60.pdf?ci_sign=ad83636680462f41f1cb1c901a1d23ec4567dd0f
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 700A
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ETD630N18P60HPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF91B47EFD3A16E0D6&compId=ETD630N18P60HPSA1.pdf?ci_sign=b68fcf03398e801cfbc0278be936e6ea25616dc5
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 700A
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ETT630N16P60HPSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF542F7242CF8BF&compId=ETD630N16P60_ETT630N16P60.pdf?ci_sign=ad83636680462f41f1cb1c901a1d23ec4567dd0f
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPB037N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5E74A0389411C&compId=IPB037N06N3G-DTE.pdf?ci_sign=1cbda32d942d894f603cf1626a1387244c7938ad
IPB037N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IRF7831TRPBF description pVersion=0046&contRep=ZT&docId=E221AC3DEBF7D7F1A303005056AB0C4F&compId=irf7831pbf.pdf?ci_sign=aa160b08d5ee14515aaafe01f33ea6efccd4b057
IRF7831TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPP410N30NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC940FD466611C&compId=IPP410N30N-DTE.pdf?ci_sign=91131cadec2f63016d12e8ee56b378c8247df703
IPP410N30NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Drain current: 44A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 300V
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+681.68 грн
3+392.36 грн
7+370.91 грн
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