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CY8C4025LQI-S411 INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Category: Infineon Technologies microcontrollers
Description: CY8C4025LQI-S411
на замовлення 3924 шт:
термін постачання 21-30 дні (днів)
490+159.44 грн
Мінімальне замовлення: 490
В кошику  од. на суму  грн.
CY8C4025LQI-S411T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+119.37 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFP4332PBF IRFP4332PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C068F1A6F5005056AB5A8F&compId=irfp4332pbf.pdf?ci_sign=e2b517b35bae67aea1d77543e68108c262ec792d description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
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IDD03SG60C IDD03SG60C INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EAACB6BC99E469&compId=IDD03SG60C.pdf?ci_sign=8b2624b28ac78a1d4298fea6db17d3caae348b6b Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Type of diode: Schottky rectifying
Case: PG-TO252-3
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Leakage current: 0.23µA
Max. forward impulse current: 9.7A
Kind of package: reel; tape
Power dissipation: 38W
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IPP051N15N5AKSA1 INFINEON TECHNOLOGIES Infineon-IPP051N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a0437e3754cb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Case: PG-TO220-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain current: 115A
Drain-source voltage: 150V
Power dissipation: 300W
Kind of channel: enhancement
Pulsed drain current: 480A
Technology: OptiMOS™ 5
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IPA80R310CEXKSA2 INFINEON TECHNOLOGIES Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
50+136.42 грн
250+114.01 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IR2118STRPBF INFINEON TECHNOLOGIES ir2117.pdf?fileId=5546d462533600a4015355c84331168d Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+81.85 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFL4310TRPBF IRFL4310TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BDE20E8924F1A303005056AB0C4F&compId=irfl4310pbf.pdf?ci_sign=a876a1102106435a0080d1318abe3e00ee948262 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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SN7002NH6433XTMA1 SN7002NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT23
Drain current: 0.16A
Power dissipation: 0.36W
On-state resistance:
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 4937 шт:
термін постачання 21-30 дні (днів)
30+14.49 грн
41+9.74 грн
69+5.75 грн
100+4.50 грн
250+3.40 грн
297+3.15 грн
500+2.87 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BCR35PNH6433XTMA1 INFINEON TECHNOLOGIES bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
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BC847PNH6433XTMA1 BC847PNH6433XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6A4E750E1A469&compId=BC846PNH6327.pdf?ci_sign=b3d707a0c8687f7783b02bc7f504750648a3ba4c Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Mounting: SMD
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 45V
Frequency: 250MHz
Polarisation: bipolar
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BCR48PNH6433XTMA1 INFINEON TECHNOLOGIES bcr48pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406c1ce60300 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 70mA
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 70mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 47/2.2kΩ
Base-emitter resistor: 47/47kΩ
Frequency: 100MHz
Polarisation: bipolar
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IRF7240TRPBF IRF7240TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7441150C01F1A303005056AB0C4F&compId=irf7240pbf.pdf?ci_sign=a0adc4ef5f3f3b20f965900b0b514c00a7c5c9de Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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6EDL04N02PR 6EDL04N02PR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE79597E2A9163A8747&compId=6EDL04N02PR.pdf?ci_sign=8bd3da517352d4c6ba4d0d0ba3a732ae80bcef92 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: TSSOP28
Output current: -0.375...0.24A
Supply voltage: 10...17.5V
Mounting: SMD
Number of channels: 6
Voltage class: 200V
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: EiceDRIVER™
Kind of package: reel; tape
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6EDL04I06PTXUMA1 INFINEON TECHNOLOGIES 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Case: PG-DSO-28
Output current: -0.375...0.24A
Supply voltage: 13...17.5V
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: EiceDRIVER™
Kind of package: reel; tape
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IPD053N08N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
2500+61.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPB65R420CFDATMA1 IPB65R420CFDATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8C604103FD1BF&compId=IPB65R420CFD-DTE.pdf?ci_sign=ed2a0bd750ba6a4b2d4e4b489e0ca0daa3c18692 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 310W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of channel: enhancement
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IPB043N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB043N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc08991b18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)
800+57.13 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
S25FL128LAGNFA010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128LAGNFB010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128LAGNFI013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
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S25FL128LAGNFV013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
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S25FL128SAGNFA000 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128SAGNFA003 INFINEON TECHNOLOGIES Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
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S25FL128SAGNFB000 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128SAGNFB003 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
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S25FL128SAGNFI010 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128SAGNFI013 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
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S25FL128SAGNFM000 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128SAGNFM003 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: reel; tape
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S25FL128SAGNFV000 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128SAGNFV003 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
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BC847CE6433HTMA1 INFINEON TECHNOLOGIES bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
на замовлення 50000 шт:
термін постачання 21-30 дні (днів)
10000+1.30 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
IRS21814STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+104.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BSS119NH6327XTSA1 BSS119NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A792634BB8910B&compId=BSS119NH6327XTSA1.pdf?ci_sign=a5f53f11c07260c48f5cedd73fc0842250fc0053 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Power dissipation: 0.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT23
Polarisation: unipolar
Drain current: 0.19A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
на замовлення 3607 шт:
термін постачання 21-30 дні (днів)
32+13.64 грн
38+10.45 грн
43+9.34 грн
59+6.81 грн
100+6.02 грн
171+5.46 грн
470+5.15 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
CY8C4025LQI-S411 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C4025LQI-S411
на замовлення 3924 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
490+159.44 грн
Мінімальне замовлення: 490
В кошику  од. на суму  грн.
CY8C4025LQI-S411T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+119.37 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFP4332PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C068F1A6F5005056AB5A8F&compId=irfp4332pbf.pdf?ci_sign=e2b517b35bae67aea1d77543e68108c262ec792d
IRFP4332PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IDD03SG60C pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EAACB6BC99E469&compId=IDD03SG60C.pdf?ci_sign=8b2624b28ac78a1d4298fea6db17d3caae348b6b
IDD03SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Type of diode: Schottky rectifying
Case: PG-TO252-3
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Leakage current: 0.23µA
Max. forward impulse current: 9.7A
Kind of package: reel; tape
Power dissipation: 38W
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IPP051N15N5AKSA1 Infineon-IPP051N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a0437e3754cb
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Case: PG-TO220-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain current: 115A
Drain-source voltage: 150V
Power dissipation: 300W
Kind of channel: enhancement
Pulsed drain current: 480A
Technology: OptiMOS™ 5
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IPA80R310CEXKSA2 Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+136.42 грн
250+114.01 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IR2118STRPBF ir2117.pdf?fileId=5546d462533600a4015355c84331168d
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+81.85 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFL4310TRPBF pVersion=0046&contRep=ZT&docId=E221BDE20E8924F1A303005056AB0C4F&compId=irfl4310pbf.pdf?ci_sign=a876a1102106435a0080d1318abe3e00ee948262
IRFL4310TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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SN7002NH6433XTMA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6433XTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT23
Drain current: 0.16A
Power dissipation: 0.36W
On-state resistance:
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 4937 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.49 грн
41+9.74 грн
69+5.75 грн
100+4.50 грн
250+3.40 грн
297+3.15 грн
500+2.87 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BCR35PNH6433XTMA1 bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
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BC847PNH6433XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6A4E750E1A469&compId=BC846PNH6327.pdf?ci_sign=b3d707a0c8687f7783b02bc7f504750648a3ba4c
BC847PNH6433XTMA1
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Mounting: SMD
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 45V
Frequency: 250MHz
Polarisation: bipolar
товару немає в наявності
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BCR48PNH6433XTMA1 bcr48pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406c1ce60300
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 70mA
Mounting: SMD
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Case: SOT363
Collector current: 70mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 47/2.2kΩ
Base-emitter resistor: 47/47kΩ
Frequency: 100MHz
Polarisation: bipolar
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IRF7240TRPBF pVersion=0046&contRep=ZT&docId=E21F7441150C01F1A303005056AB0C4F&compId=irf7240pbf.pdf?ci_sign=a0adc4ef5f3f3b20f965900b0b514c00a7c5c9de
IRF7240TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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6EDL04N02PR pVersion=0046&contRep=ZT&docId=005056AB752F1EE79597E2A9163A8747&compId=6EDL04N02PR.pdf?ci_sign=8bd3da517352d4c6ba4d0d0ba3a732ae80bcef92
6EDL04N02PR
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: TSSOP28
Output current: -0.375...0.24A
Supply voltage: 10...17.5V
Mounting: SMD
Number of channels: 6
Voltage class: 200V
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: EiceDRIVER™
Kind of package: reel; tape
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6EDL04I06PTXUMA1 6ED2-DB-Rev2_3.pdf?folderId=db3a30431a5c32f2011a77fa27a86cb5&fileId=db3a304336797ff901367c18c18445af
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Case: PG-DSO-28
Output current: -0.375...0.24A
Supply voltage: 13...17.5V
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: EiceDRIVER™
Kind of package: reel; tape
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IPD053N08N3GATMA1 Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 90A; 150W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 90A
Power dissipation: 150W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+61.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPB65R420CFDATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB8C604103FD1BF&compId=IPB65R420CFD-DTE.pdf?ci_sign=ed2a0bd750ba6a4b2d4e4b489e0ca0daa3c18692
IPB65R420CFDATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 310W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of channel: enhancement
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IPB043N10NF2SATMA1 Infineon-IPB043N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc08991b18
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
800+57.13 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
S25FL128LAGNFA010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128LAGNFB010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128LAGNFI013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
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S25FL128LAGNFV013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
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S25FL128SAGNFA000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128SAGNFA003 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
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S25FL128SAGNFB000
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
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S25FL128SAGNFB003
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128SAGNFI010 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128SAGNFI013 001-98283%20Rev%20T.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating frequency: 133MHz
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128SAGNFM000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128SAGNFM003
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128SAGNFV000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128SAGNFV003 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BC847CE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
на замовлення 50000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+1.30 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
IRS21814STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Input voltage: 10...20V
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+104.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BSS119NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A792634BB8910B&compId=BSS119NH6327XTSA1.pdf?ci_sign=a5f53f11c07260c48f5cedd73fc0842250fc0053
BSS119NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Power dissipation: 0.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT23
Polarisation: unipolar
Drain current: 0.19A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
на замовлення 3607 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.64 грн
38+10.45 грн
43+9.34 грн
59+6.81 грн
100+6.02 грн
171+5.46 грн
470+5.15 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
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