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IPB180N06S4H1ATMA2 INFINEON TECHNOLOGIES Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
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BCR401WH6327XTSA1
+1
 		BCR401WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C27E55264558BF&compId=BCR401W.pdf?ci_sign=6541f52c2999ab839e95193870c4f087e5a9dafd Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Number of channels: 1
Case: SOT343
Kind of integrated circuit: current regulator; LED driver
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Topology: single transistor
Type of integrated circuit: driver
Output current: 10...60mA
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IMBG120R030M1HXTMA1 INFINEON TECHNOLOGIES Infineon-IMBG120R030M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0eca774325c Category: Transistors - Unclassified
Description: IMBG120R030M1HXTMA1
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+834.07 грн
Мінімальне замовлення: 1000
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BCR430UXTSA2 INFINEON TECHNOLOGIES Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Topology: single transistor
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 6...42V DC
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
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IPD33CN10NGATMA1 INFINEON TECHNOLOGIES Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
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CY7C1371KV33-100AXI INFINEON TECHNOLOGIES Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Memory organisation: 512kx36bit
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 18Mb SRAM
Frequency: 100MHz
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IRF250P224 IRF250P224 INFINEON TECHNOLOGIES IRF250P224.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
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IRFP4368PBF IRFP4368PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C06FF1A6F5005056AB5A8F&compId=irfp4368pbf.pdf?ci_sign=9eb47e6406d9302930fa1feedb7fd32221717365 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
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IRLS3813TRLPBF IRLS3813TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC004893E39A143&compId=IRLS3813TRLPBF.pdf?ci_sign=d5c73a2dcebb5123fbcd021d4dd0c7ce98082d0b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 156A
Power dissipation: 195W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
On-state resistance: 1.95mΩ
Gate-source voltage: ±20V
Gate charge: 55nC
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IRLS3034TRLPBF IRLS3034TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1363FB77DB5EA&compId=IRLS3034TRLPBF.pdf?ci_sign=b1cd31c779cd5fbc0f101d0a52e7c4beab36a4a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AUIRLS3034 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8B1A083EA96143&compId=AUIRLS3034.pdf?ci_sign=ff5db222f1e89365072581b30ecf44c64c41980f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.7mΩ
Gate-source voltage: ±20V
Gate charge: 108nC
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BFS483H6327XTSA1 BFS483H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC20A4F8F5353D7&compId=BFS483H6327.pdf?ci_sign=61c3d157ad5086885e7ea2f5e876061a78c1bec1 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 65mA; 0.45W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.45W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: RF
Collector current: 65mA
Collector-emitter voltage: 12V
Frequency: 8GHz
на замовлення 2721 шт:
термін постачання 21-30 дні (днів)
13+33.57 грн
15+27.26 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BSL215CH6327XTSA1 BSL215CH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C25C1489EFE469&compId=BSL215CH6327XTSA1.pdf?ci_sign=0a00f3acfd22f79b2d11b8c2d73959540f65466f Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.5/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 0.173/0.25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
на замовлення 2377 шт:
термін постачання 21-30 дні (днів)
11+42.18 грн
16+26.38 грн
50+19.90 грн
60+19.34 грн
100+18.06 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ICE2HS01G ICE2HS01G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39087F58AA259&compId=ICE2HS01G.pdf?ci_sign=57971471c0680ec692093ffb8daf73882b579381 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
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TT400N26KOF TT400N26KOF INFINEON TECHNOLOGIES TT400N26KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: thyristor
Gate current: 250mA
Load current: 400A
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Max. off-state voltage: 2.6kV
Case: BG-PB60-1
Semiconductor structure: double series
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BC847SH6327XTSA1 BC847SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E4F171F1C469&compId=BC847SH6327.pdf?ci_sign=9f0621617777e5af35a6ad272b9ffc3005813449 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 45V
Frequency: 250MHz
на замовлення 1526 шт:
термін постачання 21-30 дні (днів)
32+13.77 грн
55+7.35 грн
72+5.59 грн
100+4.96 грн
500+4.32 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
BCM856SH6327 BCM856SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C1DE6A1A2469&compId=BCM856SH6327.pdf?ci_sign=8c374ff5ec8db9f2d76774cc1d853c230dde9778 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 65V
Frequency: 250MHz
на замовлення 1715 шт:
термін постачання 21-30 дні (днів)
20+22.38 грн
26+15.83 грн
100+10.39 грн
500+7.83 грн
1000+7.03 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IR2128STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+105.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISA170230C04LMDSXTMA1 INFINEON TECHNOLOGIES ISA170230C04LMDSXTMA1.pdf Category: Multi channel transistors
Description: ISA170230C04LMDSXTMA1
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
4000+35.46 грн
Мінімальне замовлення: 4000
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BSC022N04LS6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD83367A3120C4&compId=BSC022N04LS6ATMA1.pdf?ci_sign=e2229754fae00c68648b3afc496feb6389ec8b62 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
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S25FS512SDSBHM210 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FS01GSAGBHM210 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FS01GSDSBHM210 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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IPD650P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 22A; 83W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 22A
On-state resistance: 65mΩ
Power dissipation: 83W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: P
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
2500+48.03 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
XMC4500F100F1024ACXQMA1 XMC4500F100F1024ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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XMC4500F144F1024ACXQMA1 XMC4500F144F1024ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
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XMC4500F144K1024ACXQMA1 XMC4500F144K1024ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
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XMC4504F144K512ACXQMA1 XMC4504F144K512ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Case: PG-LQFP-144
Family: XMC4500
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IRFSL3206PBF IRFSL3206PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C696F861C1F1A303005056AB0C4F&compId=irfs3206pbf.pdf?ci_sign=f600ccb40e2eaf3741d1c40e5d7debb5a1899fde Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Case: TO262
Mounting: THT
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
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IRFSL4310ZPBF IRFSL4310ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IAUA170N10S5N031AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA170N10S5N031-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39952b0b32 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 88nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 197W
Pulsed drain current: 519A
Drain current: 22A
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IPW65R080CFDFKSA1 IPW65R080CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB3522BD531BF&compId=IPW65R080CFD-DTE.pdf?ci_sign=9425d7ac9df299ed19596fbda93012c2681a7a80 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW65R080CFDA IPW65R080CFDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D403245ADE74A&compId=IPW65R080CFDA.pdf?ci_sign=3cc3370567a07f40c2f18445a503b992be7d8ae8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB020N04NGATMA1 IPB020N04NGATMA1 INFINEON TECHNOLOGIES IPB020N04NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPI032N06N3GAKSA1 IPI032N06N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69969DC48CDC11C&compId=IPI032N06N3G-DTE.pdf?ci_sign=0ed6764248a27474389bf554d52fca3a99220ba2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
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2ED21094S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 650V
Case: PG-DSO-14
Type of integrated circuit: driver
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
на замовлення 1916 шт:
термін постачання 21-30 дні (днів)
34+12.91 грн
44+9.19 грн
55+7.35 грн
100+6.55 грн
250+5.67 грн
500+4.96 грн
1000+4.64 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
ITS428L2ATMA1 ITS428L2ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698AB8FC71B6469&compId=ITS428L2.pdf?ci_sign=78000ac0f0843a05110a1e62c49cd89d125daedb Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
на замовлення 2343 шт:
термін постачання 21-30 дні (днів)
3+156.66 грн
10+108.70 грн
25+98.31 грн
100+91.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB7540PBF IRFB7540PBF INFINEON TECHNOLOGIES IRFB7540PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
On-state resistance: 5.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 88nC
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
4+124.81 грн
7+57.71 грн
10+47.64 грн
25+40.92 грн
50+38.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2011STRPBF INFINEON TECHNOLOGIES INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; Uin: 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 1A
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
2500+105.01 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CY7C1071DV33-12BAXI INFINEON TECHNOLOGIES Infineon-CY7C1071DV33_32-Mbit_(2_M_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec32a933817&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 12ns; FBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 2Mx16bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
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В кошику  од. на суму  грн.
CY7C1079DV33-12BAXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 4Mx8bit; 12ns; FBGA48; parallel; in-tray
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 4Mx8bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
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CY7C1071DV33-12BAXIT INFINEON TECHNOLOGIES ?docID=31919 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 12ns; FBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 2Mx16bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
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IRFR4510TRPBF INFINEON TECHNOLOGIES irfr4510pbf.pdf?fileId=5546d462533600a40153563228bc20f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 252A
Drain current: 45A
On-state resistance: 13.9mΩ
Gate-source voltage: ±20V
Power dissipation: 143W
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
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IRFSL4510PBF IRFSL4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8C9AD0E015EA&compId=IRFSL4510PBF.pdf?ci_sign=b37f1d0d62505b5298aa4ab906aa8bf121bff388 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 140W
Case: TO262
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
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FF200R17KE4HOSA1 FF200R17KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A60961A4E73D7&compId=FF200R17KE4.pdf?ci_sign=57d7f67c089c0a8f2ad55fa545e7f1876fe92b70 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+13879.69 грн
В кошику  од. на суму  грн.
1ED44175N01BXTSA1 1ED44175N01BXTSA1 INFINEON TECHNOLOGIES Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: IGBT gate driver; low-side
Technology: EiceDRIVER™
Case: SOT23-6
Output current: -2.6...2.6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 12.7...20V
Voltage class: 25V
Protection: anti-overload OPP; undervoltage UVP
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TLF80511TFV50ATMA2 INFINEON TECHNOLOGIES Infineon-TLF80511TF-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa3199ac3f4b Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
2500+61.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DEMO SENSE2GOL INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
товару немає в наявності
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BTS50080-1TMA BTS50080-1TMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869886717E39A469&compId=BTS50080-1TMA.pdf?ci_sign=8cbe647494b17e75a46beef59340490bf8400257 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Technology: High Current PROFET
Kind of integrated circuit: high-side
Case: PG-TO220-7-4
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 7mΩ
Output current: 9.5A
Number of channels: 1
Supply voltage: 5.5...38V DC
на замовлення 990 шт:
термін постачання 21-30 дні (днів)
2+388.20 грн
5+302.92 грн
25+272.55 грн
100+252.57 грн
250+240.58 грн
500+216.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1472V33-200AXC INFINEON TECHNOLOGIES Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Frequency: 200MHz
Operating temperature: 0...70°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory organisation: 4Mx18bit
Memory: 72Mb SRAM
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BCR505E6327 BCR505E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56A5B28972469&compId=BCR505.pdf?ci_sign=5e69ad6db06b9b14afe597363046ce48384c5007 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
на замовлення 3441 шт:
термін постачання 21-30 дні (днів)
42+10.33 грн
57+7.11 грн
100+4.64 грн
250+3.68 грн
500+3.31 грн
1000+3.15 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BCR503E6327HTSA1 BCR503E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56C2C8D2EC469&compId=BCR503.pdf?ci_sign=9fd95cda543b3b14d33c4843aec4d29fbb1d0b45 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 6580 шт:
термін постачання 21-30 дні (днів)
23+18.94 грн
28+14.55 грн
32+12.63 грн
50+8.58 грн
100+7.18 грн
250+5.83 грн
500+5.00 грн
1000+4.43 грн
1300+4.22 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BCX71HE6327 BCX71HE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 6185 шт:
термін постачання 21-30 дні (днів)
60+7.23 грн
160+2.53 грн
180+2.27 грн
500+2.01 грн
3000+1.80 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
BCR562E6327 BCR562E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C54947CF9D8469&compId=BCR562.pdf?ci_sign=176f9a32ccc0b392519c73836ded721c287ee03c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
45+10.67 грн
60+6.39 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
BCX70KE6327 BCX70KE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C51B66DDC20469&compId=BCX70.pdf?ci_sign=da2571f5ae52c3566a8c40c8667b91e53fbb8af0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1789 шт:
термін постачання 21-30 дні (днів)
36+12.05 грн
53+7.67 грн
100+4.88 грн
500+3.55 грн
1000+3.11 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
IRF7815TRPBF IRF7815TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221ABCB43F139F1A303005056AB0C4F&compId=irf7815pbf.pdf?ci_sign=38f5aecb8cc9f50903c245ba07a8c38492c46f1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.5W
Drain current: 5.1A
Drain-source voltage: 150V
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of channel: enhancement
товару немає в наявності
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S25FL064P0XMFA003 INFINEON TECHNOLOGIES Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 104MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 104MHz
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S29JL064J55TFA003 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S29JL064J60TFA003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
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BCR401WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C27E55264558BF&compId=BCR401W.pdf?ci_sign=6541f52c2999ab839e95193870c4f087e5a9dafd
BCR401WH6327XTSA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Number of channels: 1
Case: SOT343
Kind of integrated circuit: current regulator; LED driver
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Topology: single transistor
Type of integrated circuit: driver
Output current: 10...60mA
товару немає в наявності
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IMBG120R030M1HXTMA1 Infineon-IMBG120R030M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0eca774325c
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IMBG120R030M1HXTMA1
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+834.07 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BCR430UXTSA2 Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Topology: single transistor
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 6...42V DC
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
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IPD33CN10NGATMA1 Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
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CY7C1371KV33-100AXI Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Memory organisation: 512kx36bit
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 18Mb SRAM
Frequency: 100MHz
товару немає в наявності
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IRF250P224 IRF250P224.pdf
IRF250P224
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
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IRFP4368PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C06FF1A6F5005056AB5A8F&compId=irfp4368pbf.pdf?ci_sign=9eb47e6406d9302930fa1feedb7fd32221717365
IRFP4368PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
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IRLS3813TRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC004893E39A143&compId=IRLS3813TRLPBF.pdf?ci_sign=d5c73a2dcebb5123fbcd021d4dd0c7ce98082d0b
IRLS3813TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 156A
Power dissipation: 195W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
On-state resistance: 1.95mΩ
Gate-source voltage: ±20V
Gate charge: 55nC
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IRLS3034TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1363FB77DB5EA&compId=IRLS3034TRLPBF.pdf?ci_sign=b1cd31c779cd5fbc0f101d0a52e7c4beab36a4a9
IRLS3034TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AUIRLS3034 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8B1A083EA96143&compId=AUIRLS3034.pdf?ci_sign=ff5db222f1e89365072581b30ecf44c64c41980f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.7mΩ
Gate-source voltage: ±20V
Gate charge: 108nC
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В кошику  од. на суму  грн.
BFS483H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC20A4F8F5353D7&compId=BFS483H6327.pdf?ci_sign=61c3d157ad5086885e7ea2f5e876061a78c1bec1
BFS483H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 65mA; 0.45W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.45W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: RF
Collector current: 65mA
Collector-emitter voltage: 12V
Frequency: 8GHz
на замовлення 2721 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.57 грн
15+27.26 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BSL215CH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C25C1489EFE469&compId=BSL215CH6327XTSA1.pdf?ci_sign=0a00f3acfd22f79b2d11b8c2d73959540f65466f
BSL215CH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.5/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 0.173/0.25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
на замовлення 2377 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+42.18 грн
16+26.38 грн
50+19.90 грн
60+19.34 грн
100+18.06 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
ICE2HS01G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39087F58AA259&compId=ICE2HS01G.pdf?ci_sign=57971471c0680ec692093ffb8daf73882b579381
ICE2HS01G
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
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TT400N26KOF TT400N26KOF.pdf
TT400N26KOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: thyristor
Gate current: 250mA
Load current: 400A
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Max. off-state voltage: 2.6kV
Case: BG-PB60-1
Semiconductor structure: double series
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BC847SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E4F171F1C469&compId=BC847SH6327.pdf?ci_sign=9f0621617777e5af35a6ad272b9ffc3005813449
BC847SH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 45V
Frequency: 250MHz
на замовлення 1526 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.77 грн
55+7.35 грн
72+5.59 грн
100+4.96 грн
500+4.32 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
BCM856SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C1DE6A1A2469&compId=BCM856SH6327.pdf?ci_sign=8c374ff5ec8db9f2d76774cc1d853c230dde9778
BCM856SH6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 65V
Frequency: 250MHz
на замовлення 1715 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.38 грн
26+15.83 грн
100+10.39 грн
500+7.83 грн
1000+7.03 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IR2128STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+105.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: ISA170230C04LMDSXTMA1
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+35.46 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
BSC022N04LS6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD83367A3120C4&compId=BSC022N04LS6ATMA1.pdf?ci_sign=e2229754fae00c68648b3afc496feb6389ec8b62
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
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S25FS512SDSBHM210 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FS01GSAGBHM210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
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S70FS01GSDSBHM210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
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IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 22A; 83W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 22A
On-state resistance: 65mΩ
Power dissipation: 83W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: P
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+48.03 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
XMC4500F100F1024ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F100F1024ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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XMC4500F144F1024ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F144F1024ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
товару немає в наявності
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XMC4500F144K1024ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F144K1024ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
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XMC4504F144K512ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4504F144K512ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Case: PG-LQFP-144
Family: XMC4500
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IRFSL3206PBF pVersion=0046&contRep=ZT&docId=E221C696F861C1F1A303005056AB0C4F&compId=irfs3206pbf.pdf?ci_sign=f600ccb40e2eaf3741d1c40e5d7debb5a1899fde
IRFSL3206PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Case: TO262
Mounting: THT
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
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IRFSL4310ZPBF pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d
IRFSL4310ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IAUA170N10S5N031AUMA1 Infineon-IAUA170N10S5N031-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39952b0b32
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 88nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 197W
Pulsed drain current: 519A
Drain current: 22A
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IPW65R080CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB3522BD531BF&compId=IPW65R080CFD-DTE.pdf?ci_sign=9425d7ac9df299ed19596fbda93012c2681a7a80
IPW65R080CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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IPW65R080CFDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D403245ADE74A&compId=IPW65R080CFDA.pdf?ci_sign=3cc3370567a07f40c2f18445a503b992be7d8ae8
IPW65R080CFDA
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB020N04NGATMA1 IPB020N04NG-DTE.pdf
IPB020N04NGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
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IPI032N06N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69969DC48CDC11C&compId=IPI032N06N3G-DTE.pdf?ci_sign=0ed6764248a27474389bf554d52fca3a99220ba2
IPI032N06N3GAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
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2ED21094S06JXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 650V
Case: PG-DSO-14
Type of integrated circuit: driver
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BAS7002VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7002VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
на замовлення 1916 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+12.91 грн
44+9.19 грн
55+7.35 грн
100+6.55 грн
250+5.67 грн
500+4.96 грн
1000+4.64 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
ITS428L2ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698AB8FC71B6469&compId=ITS428L2.pdf?ci_sign=78000ac0f0843a05110a1e62c49cd89d125daedb
ITS428L2ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
на замовлення 2343 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+156.66 грн
10+108.70 грн
25+98.31 грн
100+91.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB7540PBF IRFB7540PBF.pdf
IRFB7540PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
On-state resistance: 5.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 88nC
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+124.81 грн
7+57.71 грн
10+47.64 грн
25+40.92 грн
50+38.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2011STRPBF INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; Uin: 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 1A
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+105.01 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CY7C1071DV33-12BAXI Infineon-CY7C1071DV33_32-Mbit_(2_M_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec32a933817&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 12ns; FBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 2Mx16bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
товару немає в наявності
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CY7C1079DV33-12BAXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 4Mx8bit; 12ns; FBGA48; parallel; in-tray
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 4Mx8bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
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CY7C1071DV33-12BAXIT ?docID=31919
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 12ns; FBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 2Mx16bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
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IRFR4510TRPBF irfr4510pbf.pdf?fileId=5546d462533600a40153563228bc20f1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 252A
Drain current: 45A
On-state resistance: 13.9mΩ
Gate-source voltage: ±20V
Power dissipation: 143W
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
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IRFSL4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8C9AD0E015EA&compId=IRFSL4510PBF.pdf?ci_sign=b37f1d0d62505b5298aa4ab906aa8bf121bff388
IRFSL4510PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 140W
Case: TO262
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
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FF200R17KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A60961A4E73D7&compId=FF200R17KE4.pdf?ci_sign=57d7f67c089c0a8f2ad55fa545e7f1876fe92b70
FF200R17KE4HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+13879.69 грн
В кошику  од. на суму  грн.
1ED44175N01BXTSA1 Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35
1ED44175N01BXTSA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: IGBT gate driver; low-side
Technology: EiceDRIVER™
Case: SOT23-6
Output current: -2.6...2.6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 12.7...20V
Voltage class: 25V
Protection: anti-overload OPP; undervoltage UVP
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TLF80511TFV50ATMA2 Infineon-TLF80511TF-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa3199ac3f4b
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+61.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DEMO SENSE2GOL
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
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BTS50080-1TMA pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869886717E39A469&compId=BTS50080-1TMA.pdf?ci_sign=8cbe647494b17e75a46beef59340490bf8400257
BTS50080-1TMA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Technology: High Current PROFET
Kind of integrated circuit: high-side
Case: PG-TO220-7-4
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 7mΩ
Output current: 9.5A
Number of channels: 1
Supply voltage: 5.5...38V DC
на замовлення 990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+388.20 грн
5+302.92 грн
25+272.55 грн
100+252.57 грн
250+240.58 грн
500+216.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1472V33-200AXC Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Frequency: 200MHz
Operating temperature: 0...70°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory organisation: 4Mx18bit
Memory: 72Mb SRAM
товару немає в наявності
В кошику  од. на суму  грн.
BCR505E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56A5B28972469&compId=BCR505.pdf?ci_sign=5e69ad6db06b9b14afe597363046ce48384c5007
BCR505E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
на замовлення 3441 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.33 грн
57+7.11 грн
100+4.64 грн
250+3.68 грн
500+3.31 грн
1000+3.15 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BCR503E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56C2C8D2EC469&compId=BCR503.pdf?ci_sign=9fd95cda543b3b14d33c4843aec4d29fbb1d0b45
BCR503E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 6580 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.94 грн
28+14.55 грн
32+12.63 грн
50+8.58 грн
100+7.18 грн
250+5.83 грн
500+5.00 грн
1000+4.43 грн
1300+4.22 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BCX71HE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363
BCX71HE6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 6185 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
60+7.23 грн
160+2.53 грн
180+2.27 грн
500+2.01 грн
3000+1.80 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
BCR562E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C54947CF9D8469&compId=BCR562.pdf?ci_sign=176f9a32ccc0b392519c73836ded721c287ee03c
BCR562E6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
45+10.67 грн
60+6.39 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
BCX70KE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C51B66DDC20469&compId=BCX70.pdf?ci_sign=da2571f5ae52c3566a8c40c8667b91e53fbb8af0
BCX70KE6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1789 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.05 грн
53+7.67 грн
100+4.88 грн
500+3.55 грн
1000+3.11 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
IRF7815TRPBF pVersion=0046&contRep=ZT&docId=E221ABCB43F139F1A303005056AB0C4F&compId=irf7815pbf.pdf?ci_sign=38f5aecb8cc9f50903c245ba07a8c38492c46f1b
IRF7815TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.5W
Drain current: 5.1A
Drain-source voltage: 150V
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
S25FL064P0XMFA003 Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 104MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 104MHz
товару немає в наявності
В кошику  од. на суму  грн.
S29JL064J55TFA003
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S29JL064J60TFA003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
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