Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149511) > Сторінка 2490 з 2492
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| PVA3054NSPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.25V DC Control current max.: 25mA Max. operating current: 50mA Manufacturer series: PVA Mounting: SMT Case: SMD8 Body dimensions: 9.4x6.5x3.9mm Insulation voltage: 4kV Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 326 шт: термін постачання 21-30 дні (днів) |
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| IPD30N06S2L23ATMA3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252 Application: automotive industry Power dissipation: 100W Case: DPAK; TO252 Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Mounting: SMD Drain current: 30A Drain-source voltage: 55V Gate charge: 33nC On-state resistance: 15.9mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IPD096N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252 Power dissipation: 100W Case: DPAK; TO252 Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Mounting: SMD Drain current: 73A Drain-source voltage: 80V Gate charge: 35nC On-state resistance: 7.9mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPP50R280CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3 Mounting: THT Polarisation: unipolar On-state resistance: 0.28Ω Drain current: 7.1A Gate-source voltage: ±20V Power dissipation: 66W Drain-source voltage: 500V Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Case: PG-TO220-3 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPW50R280CEFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13A; 92W; PG-TO247-3 Mounting: THT Polarisation: unipolar On-state resistance: 0.28Ω Drain current: 13A Gate-source voltage: ±20V Power dissipation: 92W Drain-source voltage: 500V Technology: CoolMOS™ CE Kind of channel: enhancement Type of transistor: N-MOSFET Case: PG-TO247-3 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLF50251EL | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 0.5A Case: SSOP14 Mounting: SMD Frequency: 2.2MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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TLF50201EL | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 0.5A Case: SSOP14 Mounting: SMD Frequency: 2.2MHz Topology: buck Number of channels: 1 Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BBY5303WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA Type of diode: varicap Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Features of semiconductor devices: RF Capacitance: 1.85...5.8pF Leakage current: 0.2µA Load current: 20mA Max. off-state voltage: 6V |
на замовлення 2548 шт: термін постачання 21-30 дні (днів) |
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| IRF640NSTRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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BTS5090-1EJA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DSO8 On-state resistance: 90mΩ Supply voltage: 13.5V DC Technology: PROFET™+ 12V |
на замовлення 2080 шт: термін постачання 21-30 дні (днів) |
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BTS3050EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 0.1Ω Operating temperature: -40...150°C Output voltage: 40V Technology: HITFET® Turn-off time: 210µs Turn-on time: 115µs |
на замовлення 2945 шт: термін постачання 21-30 дні (днів) |
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BTS70041EPPXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 15A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO14-W On-state resistance: 8mΩ Supply voltage: 4.1...28V DC Operating temperature: -40...150°C Technology: PROFET™+ 12V Turn-off time: 220µs Turn-on time: 210µs |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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BTS282ZE3180AATMA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO263-7-1 On-state resistance: 6.5mΩ Kind of package: reel; tape Operating temperature: -40...175°C Output voltage: 49V Technology: TEMPFET® Integrated circuit features: internal temperature sensor Power dissipation: 300W |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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BTS3035TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 70mΩ Operating temperature: -40...150°C Output voltage: 40V Technology: HITFET® Turn-off time: 210µs Turn-on time: 115µs |
на замовлення 1082 шт: термін постачання 21-30 дні (днів) |
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BTS3035EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 70mΩ Operating temperature: -40...150°C Output voltage: 40V Technology: HITFET® Turn-off time: 210µs Turn-on time: 115µs |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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BTS282ZE3230AKSA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 36A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-12 On-state resistance: 6.5mΩ Kind of package: tube Operating temperature: -40...175°C Output voltage: 49V Technology: TEMPFET® Integrated circuit features: internal temperature sensor Power dissipation: 300W |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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| BTS70101EPAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 9A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TSDSO-14 On-state resistance: 19.5mΩ Kind of package: reel; tape Supply voltage: 4.1...28V DC Operating temperature: -40...150°C Technology: PROFET™+2 |
на замовлення 2945 шт: термін постачання 21-30 дні (днів) |
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| TDA38825XUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| ISZ040N03L5ISATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 37W On-state resistance: 4mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IR38163MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Mounting: SMD Operating temperature: -40...125°C Topology: buck DC supply current: 50mA Output voltage: 0.5...14V DC Number of channels: 1 Supply voltage: 4.5...5.5V Input voltage: 5.3...16V DC Output current: 30A Interface: PMBus; SVID Frequency: 0.15...1.5MHz Type of integrated circuit: PMIC Kind of integrated circuit: POL converter Case: PQFN5X7 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IR38165MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Mounting: SMD Operating temperature: -40...125°C Topology: buck DC supply current: 50mA Output voltage: 0.5...14V DC Number of channels: 1 Supply voltage: 4.5...5.5V Input voltage: 5.3...16V DC Output current: 30A Interface: I2C; SVID Frequency: 0.15...1.5MHz Type of integrated circuit: PMIC Kind of integrated circuit: POL converter Case: PQFN5X7 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IR38265MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Mounting: SMD Operating temperature: -40...125°C Topology: buck DC supply current: 50mA Output voltage: 0.5...14V DC Number of channels: 1 Supply voltage: 4.5...5.5V Input voltage: 5.3...16V DC Output current: 30A Interface: I2C; PVID Frequency: 0.15...1.5MHz Type of integrated circuit: PMIC Kind of integrated circuit: POL converter Case: PQFN5X7 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IR38363MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Mounting: SMD Operating temperature: -40...125°C Topology: buck DC supply current: 50mA Output voltage: 0.5...14V DC Number of channels: 1 Supply voltage: 4.5...5.5V Input voltage: 5.3...16V DC Output current: 15A Interface: PMBus; SVID Frequency: 0.15...1.5MHz Type of integrated circuit: PMIC Kind of integrated circuit: POL converter Case: PQFN5X7 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IR38365MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Mounting: SMD Operating temperature: -40...125°C Topology: buck DC supply current: 50mA Output voltage: 0.5...14V DC Number of channels: 1 Supply voltage: 4.5...5.5V Input voltage: 5.3...16V DC Output current: 15A Interface: I2C; SVID Frequency: 0.15...1.5MHz Type of integrated circuit: PMIC Kind of integrated circuit: POL converter Case: PQFN5X7 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IR3899AMTRPBFXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 675 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
| SPB20N60S5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO263 Mounting: SMD Kind of channel: enhancement Gate charge: 21nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DDB2U60N07W1RFB58BPSA1 | INFINEON TECHNOLOGIES |
Category: Diode modulesDescription: DDB2U60N07W1RFB58BPSA1 |
на замовлення 1200 шт: термін постачання 21-30 дні (днів) |
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| TC234L32F200FABKXUMA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - UnclassifiedDescription: TC234L32F200FABKXUMA1 |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| TC234L32F200FACKXUMA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - UnclassifiedDescription: TC234L32F200FACKXUMA1 |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| BSS138IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 60V; 230mA; 360mW; SOT23; SMT Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: 20V On-state resistance: 3.5Ω Mounting: SMD Gate charge: 1nC Kind of channel: enhancement Electrical mounting: SMT |
на замовлення 645000 шт: термін постачання 21-30 дні (днів) |
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| BSHBSS138NH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: Unclassified Description: BSHBSS138NH6433XTMA1 |
на замовлення 35000 шт: термін постачання 21-30 дні (днів) |
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IPB80N06S2L07ATMA3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 210W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhancement Technology: OptiMOS™ |
на замовлення 671 шт: термін постачання 21-30 дні (днів) |
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IPI80N06S407AKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 58A Pulsed drain current: 320A Power dissipation: 79W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: THT Gate charge: 27nC Kind of channel: enhancement Technology: OptiMOS® -T2 |
на замовлення 398 шт: термін постачання 21-30 дні (днів) |
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| IPB80N06S405ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Pulsed drain current: 320A Power dissipation: 107W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1EDI20I12MFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -2...2A Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 3.1...17V; 13...35V Voltage class: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPD100N04S402ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252 Case: DPAK; TO252 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 118nC On-state resistance: 1.7mΩ Power dissipation: 150W Drain-source voltage: 40V Drain current: 100A Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRF1310NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 73.3nC Kind of package: tube Kind of channel: enhancement |
на замовлення 189 шт: термін постачання 21-30 дні (днів) |
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| IRF1310NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Pulsed drain current: 140A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IKD15N60RC2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| IAUC120N06S5L022ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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| IRS2113STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; half-bridge; SOIC16; Ch: 2; MOSFET; 2.5A; 1.25W Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: half-bridge Case: SOIC16 Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...150°C Maximum output current: 2.5A Power dissipation: 1.25W |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| IPP020N03LF2SAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| IPB180N10S402ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: TO263-7 On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 156nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BSC027N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TSON8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: TSON8 On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 111nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCR135WH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCV61BE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143 Polarisation: bipolar Case: SOT143 Mounting: SMD Type of transistor: NPN x2 Collector current: 0.1A Power dissipation: 0.3W Collector-emitter voltage: 30V Frequency: 250MHz |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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IPL65R130C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 15A Drain-source voltage: 650V On-state resistance: 0.13Ω Gate-source voltage: ±20V Power dissipation: 102W Case: PG-VSON-4 Technology: CoolMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SPB21N50C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 560V Drain current: 21A Power dissipation: 208W Case: D2PAK-3 On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement Gate charge: 10nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY96F346ASBPMCR-GS-UJE2 | INFINEON TECHNOLOGIES |
Category: Unclassified Description: CY96F346ASBPMCR-GS-UJE2 |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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| SPW20N60CFDFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3 Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 20.7A Power dissipation: 208W Case: TO247-3 Gate-source voltage: 20V On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhancement Gate charge: 124nC |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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| S25HS02GTDPBHB053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Interface: QUAD SPI Kind of interface: serial Operating frequency: 133MHz Memory: 2Gb FLASH Application: automotive Type of integrated circuit: FLASH memory Kind of package: reel; tape Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| S25HS02GTDPBHV053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Interface: QUAD SPI Kind of interface: serial Operating frequency: 133MHz Memory: 2Gb FLASH Type of integrated circuit: FLASH memory Kind of package: reel; tape Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| S28HS02GTFPBHV050 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Interface: octal Kind of interface: serial Operating frequency: 166MHz Memory: 2Gb FLASH Type of integrated circuit: FLASH memory Kind of package: in-tray Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| S28HS02GTFPBHV053 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial Operating voltage: 1.7...2V Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Interface: octal Kind of interface: serial Operating frequency: 166MHz Memory: 2Gb FLASH Type of integrated circuit: FLASH memory Kind of package: reel; tape Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY62167ELL-45ZXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY62167ELL-45ZXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY62167EV30LL-45ZXA | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY62167G-45ZXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY62167G-45ZXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY62167G18-55BVXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 55ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.65...2.2V DC |
товару немає в наявності |
В кошику од. на суму грн. |
| PVA3054NSPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.25V DC
Control current max.: 25mA
Max. operating current: 50mA
Manufacturer series: PVA
Mounting: SMT
Case: SMD8
Body dimensions: 9.4x6.5x3.9mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.25VDC; Icntrl max: 25mA
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.25V DC
Control current max.: 25mA
Max. operating current: 50mA
Manufacturer series: PVA
Mounting: SMT
Case: SMD8
Body dimensions: 9.4x6.5x3.9mm
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 326 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 466.30 грн |
| IPD30N06S2L23ATMA3 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Application: automotive industry
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 30A
Drain-source voltage: 55V
Gate charge: 33nC
On-state resistance: 15.9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Application: automotive industry
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 30A
Drain-source voltage: 55V
Gate charge: 33nC
On-state resistance: 15.9mΩ
товару немає в наявності
В кошику
од. на суму грн.
| IPD096N08N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 73A
Drain-source voltage: 80V
Gate charge: 35nC
On-state resistance: 7.9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 73A
Drain-source voltage: 80V
Gate charge: 35nC
On-state resistance: 7.9mΩ
товару немає в наявності
В кошику
од. на суму грн.
| IPP50R280CEXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 7.1A
Gate-source voltage: ±20V
Power dissipation: 66W
Drain-source voltage: 500V
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 7.1A
Gate-source voltage: ±20V
Power dissipation: 66W
Drain-source voltage: 500V
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| IPW50R280CEFKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 92W; PG-TO247-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 92W
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO247-3
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 92W; PG-TO247-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 13A
Gate-source voltage: ±20V
Power dissipation: 92W
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO247-3
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| TLF50251EL |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.78 грн |
| TLF50201EL |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
товару немає в наявності
В кошику
од. на суму грн.
| BBY5303WE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 1.85...5.8pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 6V
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 1.85...5.8pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 6V
на замовлення 2548 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.96 грн |
| 25+ | 17.06 грн |
| 26+ | 15.91 грн |
| 100+ | 12.79 грн |
| 500+ | 10.66 грн |
| 1000+ | 10.17 грн |
| IRF640NSTRRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 45.13 грн |
| BTS5090-1EJA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
на замовлення 2080 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 170.45 грн |
| 10+ | 102.51 грн |
| 25+ | 91.03 грн |
| 100+ | 76.27 грн |
| 250+ | 68.88 грн |
| 500+ | 63.14 грн |
| 1000+ | 61.50 грн |
| BTS3050EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
на замовлення 2945 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.61 грн |
| 6+ | 77.91 грн |
| 25+ | 64.78 грн |
| 100+ | 58.22 грн |
| 250+ | 54.12 грн |
| 500+ | 51.66 грн |
| 1000+ | 46.74 грн |
| BTS70041EPPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO14-W
On-state resistance: 8mΩ
Supply voltage: 4.1...28V DC
Operating temperature: -40...150°C
Technology: PROFET™+ 12V
Turn-off time: 220µs
Turn-on time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO14-W
On-state resistance: 8mΩ
Supply voltage: 4.1...28V DC
Operating temperature: -40...150°C
Technology: PROFET™+ 12V
Turn-off time: 220µs
Turn-on time: 210µs
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.53 грн |
| 10+ | 95.13 грн |
| 25+ | 93.49 грн |
| BTS282ZE3180AATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Operating temperature: -40...175°C
Output voltage: 49V
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Power dissipation: 300W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Operating temperature: -40...175°C
Output voltage: 49V
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Power dissipation: 300W
на замовлення 77 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 521.05 грн |
| BTS3035TF |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
на замовлення 1082 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.57 грн |
| 5+ | 99.23 грн |
| 10+ | 92.67 грн |
| 25+ | 82.83 грн |
| 100+ | 72.17 грн |
| 250+ | 66.42 грн |
| 500+ | 61.50 грн |
| 1000+ | 60.68 грн |
| BTS3035EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Output voltage: 40V
Technology: HITFET®
Turn-off time: 210µs
Turn-on time: 115µs
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.57 грн |
| 25+ | 74.63 грн |
| 100+ | 67.24 грн |
| 250+ | 62.32 грн |
| 500+ | 59.04 грн |
| 1000+ | 53.30 грн |
| BTS282ZE3230AKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Operating temperature: -40...175°C
Output voltage: 49V
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Power dissipation: 300W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Operating temperature: -40...175°C
Output voltage: 49V
Technology: TEMPFET®
Integrated circuit features: internal temperature sensor
Power dissipation: 300W
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 515.75 грн |
| 3+ | 430.53 грн |
| 10+ | 381.33 грн |
| BTS70101EPAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 19.5mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Operating temperature: -40...150°C
Technology: PROFET™+2
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 19.5mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Operating temperature: -40...150°C
Technology: PROFET™+2
на замовлення 2945 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 87.43 грн |
| 10+ | 70.52 грн |
| 25+ | 66.42 грн |
| 100+ | 59.86 грн |
| 250+ | 58.22 грн |
| TDA38825XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 122.76 грн |
| ISZ040N03L5ISATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
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В кошику
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| IR38163MTRPBFAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Interface: PMBus; SVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Interface: PMBus; SVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
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| IR38165MTRPBFAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Interface: I2C; SVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Interface: I2C; SVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
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В кошику
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| IR38265MTRPBFAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Interface: I2C; PVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 30A
Interface: I2C; PVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
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од. на суму грн.
| IR38363MTRPBFAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 15A
Interface: PMBus; SVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 15A
Interface: PMBus; SVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
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од. на суму грн.
| IR38365MTRPBFAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 15A
Interface: I2C; SVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Output current: 15A
Interface: I2C; SVID
Frequency: 0.15...1.5MHz
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Kind of package: reel; tape
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од. на суму грн.
| IR3899AMTRPBFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 675 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| SPB20N60S5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
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од. на суму грн.
| DDB2U60N07W1RFB58BPSA1 |
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на замовлення 1200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 5860.51 грн |
| TC234L32F200FABKXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: TC234L32F200FABKXUMA1
Category: Integrated circuits - Unclassified
Description: TC234L32F200FABKXUMA1
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 255.23 грн |
| TC234L32F200FACKXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: TC234L32F200FACKXUMA1
Category: Integrated circuits - Unclassified
Description: TC234L32F200FACKXUMA1
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 962.62 грн |
| BSS138IXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 230mA; 360mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 230mA; 360mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 645000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.78 грн |
| BSHBSS138NH6433XTMA1 |
на замовлення 35000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20000+ | 2.90 грн |
| IPB80N06S2L07ATMA3 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Technology: OptiMOS™
на замовлення 671 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 184.58 грн |
| 10+ | 105.79 грн |
| 25+ | 104.15 грн |
| IPI80N06S407AKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Technology: OptiMOS® -T2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Technology: OptiMOS® -T2
на замовлення 398 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.63 грн |
| 10+ | 103.33 грн |
| IPB80N06S405ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1EDI20I12MFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
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| IPD100N04S402ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1.7mΩ
Power dissipation: 150W
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1.7mΩ
Power dissipation: 150W
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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| IRF1310NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 73.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 73.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 189 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 121.87 грн |
| 10+ | 84.47 грн |
| 50+ | 70.52 грн |
| 100+ | 65.60 грн |
| IRF1310NSTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
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| IKD15N60RC2ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 42.57 грн |
| IAUC120N06S5L022ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 60.94 грн |
| IRS2113STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC16; Ch: 2; MOSFET; 2.5A; 1.25W
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: SOIC16
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Maximum output current: 2.5A
Power dissipation: 1.25W
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC16; Ch: 2; MOSFET; 2.5A; 1.25W
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: SOIC16
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Maximum output current: 2.5A
Power dissipation: 1.25W
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 136.00 грн |
| IPP020N03LF2SAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 60.94 грн |
| IPB180N10S402ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Application: automotive industry
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| BSC027N10NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: TSON8
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 111nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: TSON8
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 111nC
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| BCR135WH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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| BCV61BE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Polarisation: bipolar
Case: SOT143
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 30V
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Polarisation: bipolar
Case: SOT143
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 30V
Frequency: 250MHz
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.31 грн |
| 34+ | 12.30 грн |
| 100+ | 10.09 грн |
| 250+ | 9.27 грн |
| IPL65R130C7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 15A
Drain-source voltage: 650V
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Power dissipation: 102W
Case: PG-VSON-4
Technology: CoolMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 15A
Drain-source voltage: 650V
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Power dissipation: 102W
Case: PG-VSON-4
Technology: CoolMOS™
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| SPB21N50C3ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: D2PAK-3
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: D2PAK-3
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10nC
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| CY96F346ASBPMCR-GS-UJE2 |
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 900+ | 2824.28 грн |
| SPW20N60CFDFKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
на замовлення 238 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 284.37 грн |
| 120+ | 237.00 грн |
| S25HS02GTDPBHB053 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Application: automotive
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Application: automotive
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
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| S25HS02GTDPBHV053 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
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| S28HS02GTFPBHV050 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
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| S28HS02GTFPBHV053 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
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| CY62167ELL-45ZXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 4.5...5.5V DC
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| CY62167ELL-45ZXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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| CY62167EV30LL-45ZXA |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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| CY62167G-45ZXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 4.5...5.5V DC
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| CY62167G-45ZXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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| CY62167G18-55BVXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 55ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.2V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 55ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.2V DC
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