Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148446) > Сторінка 33 з 2475
| Фото | Назва | Виробник | Інформація |
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IRLU3714Z | Infineon Technologies |
 Description: MOSFET N-CH 20V 37A I-PAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 |
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| IRMCS2031 | Infineon Technologies |
Description: SYSTEM DEVEL IMOTION SENSORLESS Packaging: Box Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IRMCK203 Supplied Contents: Board(s) Part Status: Obsolete Contents: Board(s) |
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PVT212S | Infineon Technologies |
Description: SSR RELAY SPST-NO 550MA 0-150V Packaging: Tube Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 550 mA Supplier Device Package: 6-SMT Part Status: Obsolete Voltage - Load: 0 V ~ 150 V On-State Resistance (Max): 750 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: UL |
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IRL3714ZSTRR | Infineon Technologies |
Description: MOSFET N-CH 20V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
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IRLR3714ZTRR | Infineon Technologies |
Description: MOSFET N-CH 20V 37A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V |
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IRLR4343TR | Infineon Technologies |
Description: MOSFET N-CH 55V 26A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V |
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IRLR4343TRR | Infineon Technologies |
Description: MOSFET N-CH 55V 26A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V |
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IRL3705Z | Infineon Technologies |
Description: MOSFET N-CH 55V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V |
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IRL3705ZL | Infineon Technologies |
Description: MOSFET N-CH 55V 75A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V |
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IRLIB9343 | Infineon Technologies |
Description: MOSFET P-CH 55V 14A TO220AB FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Full-Pak Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V |
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IRLR4343 | Infineon Technologies |
Description: MOSFET N-CH 55V 26A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V |
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IRLU2905Z | Infineon Technologies |
Description: MOSFET N-CH 55V 42A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IRLU4343 | Infineon Technologies |
Description: MOSFET N-CH 55V 26A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
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IRLU9343 | Infineon Technologies |
Description: MOSFET P-CH 55V 20A I-PAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
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IRLZ44Z | Infineon Technologies |
Description: MOSFET N-CH 55V 51A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V |
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IRLZ44ZL | Infineon Technologies |
Description: MOSFET N-CH 55V 51A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V |
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IRU3138CSTR | Infineon Technologies |
Description: IC REG CTRLR BUCK 14SOIC |
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IRU3138CSTR | Infineon Technologies |
Description: IC REG CTRLR BUCK 14SOIC |
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| IRMCS2013 | Infineon Technologies |
Description: DESIGN BOARD FOR IRMCK201 |
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| IRMCS2033 | Infineon Technologies |
Description: DESIGN BOARD FOR IRMCK203 Packaging: Box Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IRMCK203 Supplied Contents: Board(s) Part Status: Obsolete |
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IRF7834 | Infineon Technologies |
Description: MOSFET N-CH 30V 19A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 15 V |
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IRF7834TR | Infineon Technologies |
Description: MOSFET N-CH 30V 19A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 15 V |
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CY7C68013-100AC | Infineon Technologies |
Description: IC MCU USB PERIPH HI SPD 100LQFP Packaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, USB, USART RAM Size: 16K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Controller Series: CY7C680xx Program Memory Type: ROMless Applications: USB Microcontroller Core Processor: 8051 Supplier Device Package: 100-TQFP (14x20) Part Status: Obsolete Number of I/O: 40 DigiKey Programmable: Not Verified |
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IRF7842TR | Infineon Technologies |
Description: MOSFET N-CH 40V 18A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V |
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IRF7832TR | Infineon Technologies |
Description: MOSFET N-CH 30V 20A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.32V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V |
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| IRPLCFL5E | Infineon Technologies |
Description: KIT DESIGN CFL BALLAST 220VAC Packaging: Box Function: Ballast Control Type: Opto/Lighting Utilized IC / Part: IR2520D Supplied Contents: Board(s) Part Status: Obsolete |
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| IRPLCFL5U | Infineon Technologies |
Description: KIT DESIGN CFL BALLAST 120VAC Packaging: Box Function: Ballast Control Type: Opto/Lighting Utilized IC / Part: IR2520D Supplied Contents: Board(s) Part Status: Obsolete |
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| IRPLHALO1E | Infineon Technologies |
Description: EVAL BOARD FOR IR2161 Packaging: Box Function: Ballast Control Type: Opto/Lighting Contents: Board(s) Utilized IC / Part: IR2161 Supplied Contents: Board(s) Part Status: Obsolete |
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| IRPLMB1E | Infineon Technologies |
Description: KIT DESIGN BALLAST 220VAC Packaging: Box Function: Ballast Control Type: Opto/Lighting Utilized IC / Part: IR2520D Supplied Contents: Board(s) Part Status: Obsolete |
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BGA427E6327BTSA1 | Infineon Technologies |
Description: IC AMP BLE 100MHZ-3GHZ SOT343-3D Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 100MHz ~ 3GHz RF Type: Bluetooth Voltage - Supply: 3V ~ 6V Gain: 18.5dB Current - Supply: 25mA Noise Figure: 2.2dB Test Frequency: 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Obsolete |
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IR2011 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 35ns, 20ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.7V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IR2011S | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 35ns, 20ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.7V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IR2011SPBF | Infineon Technologies |
 Description: IC GATE DRVR HI/LOW SIDE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 35ns, 20ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.7V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3717 шт: термін постачання 21-31 дні (днів) |
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IR2011STR | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 35ns, 20ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.7V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A Part Status: Obsolete DigiKey Programmable: Not Verified |
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IR2011STRPBF | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 35ns, 20ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.7V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IR3310STRR | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 5.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 23A Ratio - Input:Output: 1:1 Supplier Device Package: D2Pak (SMD-220 5-Lead) Fault Protection: Current Limiting (Adjustable), Over Temperature Part Status: Obsolete |
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В кошику од. на суму грн. | ||||||||||||||||
.jpg "IR3311STRL") |
IR3311STRL | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 18A Ratio - Input:Output: 1:1 Supplier Device Package: D2Pak (SMD-220 5-Lead) Fault Protection: Current Limiting (Adjustable), Over Temperature |
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IR3311STRR | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 18A Ratio - Input:Output: 1:1 Supplier Device Package: D2Pak (SMD-220 5-Lead) Fault Protection: Current Limiting (Adjustable), Over Temperature |
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IR3312STRL | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 15mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 14A Ratio - Input:Output: 1:1 Supplier Device Package: D2Pak (SMD-220 5-Lead) Fault Protection: Current Limiting (Adjustable), Over Temperature |
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В кошику од. на суму грн. | ||||||||||||||||
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IR3312STRR | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 15mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 14A Ratio - Input:Output: 1:1 Supplier Device Package: D2Pak (SMD-220 5-Lead) Fault Protection: Current Limiting (Adjustable), Over Temperature |
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IRF3707ZCSTRR | Infineon Technologies |
Description: MOSFET N-CH 30V 59A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V |
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IRF3707ZSTRL | Infineon Technologies |
Description: MOSFET N-CH 30V 59A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V |
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IRF3707ZSTRR | Infineon Technologies |
Description: MOSFET N-CH 30V 59A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V |
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IRF3709ZCSTRL | Infineon Technologies |
Description: MOSFET N-CH 30V 87A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V |
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IRF3709ZCSTRR | Infineon Technologies |
Description: MOSFET N-CH 30V 87A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V |
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IRF3711ZCSTRL | Infineon Technologies |
Description: MOSFET N-CH 20V 92A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V |
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IRF3711ZCSTRR | Infineon Technologies |
Description: MOSFET N-CH 20V 92A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V |
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IRF3711ZSTRL | Infineon Technologies |
Description: MOSFET N-CH 20V 92A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V |
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IRF3711ZSTRR | Infineon Technologies |
Description: MOSFET N-CH 20V 92A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V |
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IRF540ZSTRL | Infineon Technologies |
Description: MOSFET N-CH 100V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
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IRF540ZSTRR | Infineon Technologies |
Description: MOSFET N-CH 100V 36A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
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IRF6609TR1 | Infineon Technologies |
Description: MOSFET N-CH 20V 31A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 31A, 10V Power Dissipation (Max): 1.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V |
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IRF6617TR1 | Infineon Technologies |
Description: MOSFET N-CH 30V 14A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric ST Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 250µA Supplier Device Package: DIRECTFET™ ST Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
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IRF6620TR1 | Infineon Technologies |
Description: MOSFET N-CH 20V 27A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 27A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: DIRECTFET™ MX Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 10 V |
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IRF6691TR1 | Infineon Technologies |
Description: MOSFET N-CH 20V 32A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V |
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IRF8915TR | Infineon Technologies |
Description: MOSFET 2N-CH 20V 8.9A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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IRF9910TR | Infineon Technologies |
Description: MOSFET 2N-CH 20V 10A/12A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A, 12A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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IRFR120ZTR | Infineon Technologies |
Description: MOSFET N-CH 100V 8.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
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IRFR120ZTRL | Infineon Technologies |
Description: MOSFET N-CH 100V 8.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
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IRL1404ZSTRL | Infineon Technologies |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
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В кошику од. на суму грн. |
| IRLU3714Z |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 37A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Description: MOSFET N-CH 20V 37A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
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| IRMCS2031 |
|
Виробник: Infineon Technologies
Description: SYSTEM DEVEL IMOTION SENSORLESS
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK203
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Description: SYSTEM DEVEL IMOTION SENSORLESS
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK203
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
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| PVT212S |
|
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-150V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 550 mA
Supplier Device Package: 6-SMT
Part Status: Obsolete
Voltage - Load: 0 V ~ 150 V
On-State Resistance (Max): 750 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Description: SSR RELAY SPST-NO 550MA 0-150V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 550 mA
Supplier Device Package: 6-SMT
Part Status: Obsolete
Voltage - Load: 0 V ~ 150 V
On-State Resistance (Max): 750 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
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| IRL3714ZSTRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Description: MOSFET N-CH 20V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
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| IRLR3714ZTRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Description: MOSFET N-CH 20V 37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
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| IRLR4343TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
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| IRLR4343TRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
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| IRL3705Z |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
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| IRL3705ZL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
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| IRLIB9343 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 14A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Description: MOSFET P-CH 55V 14A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
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| IRLR4343 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
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| IRLU2905Z |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 42A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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| IRLU4343 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 26A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: MOSFET N-CH 55V 26A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
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| IRLU9343 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 20A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: MOSFET P-CH 55V 20A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
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| IRLZ44Z |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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| IRLZ44ZL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Description: MOSFET N-CH 55V 51A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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| IRU3138CSTR |
|
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14SOIC
Description: IC REG CTRLR BUCK 14SOIC
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| IRU3138CSTR |
|
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14SOIC
Description: IC REG CTRLR BUCK 14SOIC
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| IRMCS2013 |
|
Виробник: Infineon Technologies
Description: DESIGN BOARD FOR IRMCK201
Description: DESIGN BOARD FOR IRMCK201
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| IRMCS2033 |
|
Виробник: Infineon Technologies
Description: DESIGN BOARD FOR IRMCK203
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK203
Supplied Contents: Board(s)
Part Status: Obsolete
Description: DESIGN BOARD FOR IRMCK203
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK203
Supplied Contents: Board(s)
Part Status: Obsolete
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| IRF7834 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 15 V
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 15 V
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| IRF7834TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 15 V
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 15 V
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| CY7C68013-100AC |
|
Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 100-TQFP (14x20)
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: IC MCU USB PERIPH HI SPD 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 100-TQFP (14x20)
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
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| IRF7842TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 18A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
Description: MOSFET N-CH 40V 18A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
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| IRF7832TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.32V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
Description: MOSFET N-CH 30V 20A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.32V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
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| IRPLCFL5E |
|
Виробник: Infineon Technologies
Description: KIT DESIGN CFL BALLAST 220VAC
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Utilized IC / Part: IR2520D
Supplied Contents: Board(s)
Part Status: Obsolete
Description: KIT DESIGN CFL BALLAST 220VAC
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Utilized IC / Part: IR2520D
Supplied Contents: Board(s)
Part Status: Obsolete
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| IRPLCFL5U |
|
Виробник: Infineon Technologies
Description: KIT DESIGN CFL BALLAST 120VAC
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Utilized IC / Part: IR2520D
Supplied Contents: Board(s)
Part Status: Obsolete
Description: KIT DESIGN CFL BALLAST 120VAC
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Utilized IC / Part: IR2520D
Supplied Contents: Board(s)
Part Status: Obsolete
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| IRPLHALO1E |
|
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR2161
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Contents: Board(s)
Utilized IC / Part: IR2161
Supplied Contents: Board(s)
Part Status: Obsolete
Description: EVAL BOARD FOR IR2161
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Contents: Board(s)
Utilized IC / Part: IR2161
Supplied Contents: Board(s)
Part Status: Obsolete
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| IRPLMB1E |
|
Виробник: Infineon Technologies
Description: KIT DESIGN BALLAST 220VAC
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Utilized IC / Part: IR2520D
Supplied Contents: Board(s)
Part Status: Obsolete
Description: KIT DESIGN BALLAST 220VAC
Packaging: Box
Function: Ballast Control
Type: Opto/Lighting
Utilized IC / Part: IR2520D
Supplied Contents: Board(s)
Part Status: Obsolete
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| BGA427E6327BTSA1 |
|
Виробник: Infineon Technologies
Description: IC AMP BLE 100MHZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: Bluetooth
Voltage - Supply: 3V ~ 6V
Gain: 18.5dB
Current - Supply: 25mA
Noise Figure: 2.2dB
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Description: IC AMP BLE 100MHZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: Bluetooth
Voltage - Supply: 3V ~ 6V
Gain: 18.5dB
Current - Supply: 25mA
Noise Figure: 2.2dB
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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| IR2011 |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| IR2011S |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| IR2011SPBF | |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3717 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 206.11 грн |
| 10+ | 148.29 грн |
| 95+ | 122.21 грн |
| 190+ | 109.76 грн |
| 285+ | 107.30 грн |
| 570+ | 103.68 грн |
| 1045+ | 99.39 грн |
| 2565+ | 96.28 грн |
| IR2011STR |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| IR2011STRPBF | |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 108.73 грн |
| 5000+ | 102.61 грн |
| IR3310STRR |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature
Part Status: Obsolete
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В кошику
од. на суму грн.
| IR3311STRL |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature
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В кошику
од. на суму грн.
| IR3311STRR |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| IR3312STRL |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| IR3312STRR |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| IRF3707ZCSTRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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В кошику
од. на суму грн.
| IRF3707ZSTRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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В кошику
од. на суму грн.
| IRF3707ZSTRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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В кошику
од. на суму грн.
| IRF3709ZCSTRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
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В кошику
од. на суму грн.
| IRF3709ZCSTRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF3711ZCSTRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 92A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Description: MOSFET N-CH 20V 92A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF3711ZCSTRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 92A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Description: MOSFET N-CH 20V 92A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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В кошику
од. на суму грн.
| IRF3711ZSTRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 92A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Description: MOSFET N-CH 20V 92A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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| IRF3711ZSTRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 92A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Description: MOSFET N-CH 20V 92A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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| IRF540ZSTRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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| IRF540ZSTRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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| IRF6609TR1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 31A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 31A, 10V
Power Dissipation (Max): 1.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
Description: MOSFET N-CH 20V 31A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 31A, 10V
Power Dissipation (Max): 1.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
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| IRF6617TR1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: MOSFET N-CH 30V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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| IRF6620TR1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 10 V
Description: MOSFET N-CH 20V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 10 V
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| IRF6691TR1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
Description: MOSFET N-CH 20V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
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| IRF8915TR |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 8.9A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 20V 8.9A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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| IRF9910TR |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A/12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 20V 10A/12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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| IRFR120ZTR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
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| IRFR120ZTRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
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| IRL1404ZSTRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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