Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123035) > Сторінка 493 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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S25FL064LABBHI020 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGAPackaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
на замовлення 154 шт: термін постачання 21-31 дні (днів) |
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S25FL064LABBHI030 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGADigiKey Programmable: Not Verified Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O, QPI Part Status: Active Supplier Device Package: 24-BGA (6x8) Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray |
на замовлення 1928 шт: термін постачання 21-31 дні (днів) |
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S25FL064P0XBHI030 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGADigiKey Programmable: Not Verified Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 5µs, 3ms Supplier Device Package: 24-BGA (6x8) Memory Format: FLASH Clock Frequency: 104 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FL064LABBHV020 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 24BGAPackaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
на замовлення 364 шт: термін постачання 21-31 дні (днів) |
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S25FL064P0XMFI003 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 16SOICDigiKey Programmable: Verified Memory Organization: 8M x 8 Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 5µs, 3ms Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 104 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| S25FL064LABNFM041 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8USON |
товару немає в наявності |
Мінімальне замовлення: 1845 шт В кошику од. на суму грн. | |||||||||||||||||
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S25FL064LABMFV003 | Infineon Technologies |
Description: IC FLASH 64BIT SPI 16SOIC |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | ||||||||||||||||
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IRLR3714ZTRL | Infineon Technologies |
Description: MOSFET N-CH 20V 37A DPAKInput Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLR3714ZTRL | Infineon Technologies |
Description: MOSFET N-CH 20V 37A DPAKDrain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2.55V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IQE050N08NM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-WHTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
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IQE050N08NM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFETPackaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-WHTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
на замовлення 5817 шт: термін постачання 21-31 дні (днів) |
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IQE030N06NM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-WHTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
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IQE030N06NM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFETPackaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-WHTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V |
на замовлення 5476 шт: термін постачання 21-31 дні (днів) |
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IQE006NE2LM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-WHTFN-9-1 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
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IQE006NE2LM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFETPackage / Case: 9-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-WHTFN-9-1 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 413 шт: термін постачання 21-31 дні (днів) |
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IQE013N04LM6CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 51µA Supplier Device Package: PG-WHTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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IQE013N04LM6CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFETPackaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 51µA Supplier Device Package: PG-WHTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V |
на замовлення 29322 шт: термін постачання 21-31 дні (днів) |
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IQE065N10NM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFETOperating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-WHTFN-9-1 Vgs(th) (Max) @ Id: 3.8V @ 48µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
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IQE065N10NM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS LOWVOLTAGE POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-WHTFN-9-1 Vgs(th) (Max) @ Id: 3.8V @ 48µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerWDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYPD3195-24LDXS | Infineon Technologies |
Description: CCG3PADigiKey Programmable: Not Verified Number of I/O: 12 Part Status: Active Supplier Device Package: 24-QFN (4x4) Core Processor: ARM® Cortex®-M0 Applications: USB Type C Program Memory Type: FLASH (64kB) Voltage - Supply: 3V ~ 24.5V Operating Temperature: -40°C ~ 105°C RAM Size: 8K x 8 Interface: I2C, SPI, UART, USB Mounting Type: Surface Mount, Wettable Flank Package / Case: 24-UFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2450 шт В кошику од. на суму грн. | ||||||||||||||||
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CYT3BBBCEBQ0BZEGS | Infineon Technologies |
Description: IC MCU 32BT 4.0625MB FLSH 272BGAPackaging: Tray Package / Case: 272-LFBGA Mounting Type: Surface Mount Speed: 100MHz, 250MHz Program Memory Size: 4.0625MB (4.0625M x 8) RAM Size: 768K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 256K x 8 Core Processor: ARM® Cortex®-M0+/M7 Data Converters: A/D 90x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 272-BGA (16x16) Part Status: Active Number of I/O: 220 DigiKey Programmable: Not Verified |
на замовлення 596 шт: термін постачання 21-31 дні (днів) |
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| CYT3BBBCEBQ0BZSGS | Infineon Technologies |
Description: IC MCU 32BT 4.0625MB FLSH 272BGAPart Status: Active Supplier Device Package: 272-BGA (16x16) Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Data Converters: A/D 90x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 EEPROM Size: 256K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 768K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 100MHz, 250MHz Mounting Type: Surface Mount Package / Case: 272-LFBGA Packaging: Tray Number of I/O: 220 |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | |||||||||||||||||
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CYT3BBBCEBQ0BZEGST | Infineon Technologies |
Description: IC MCU 32BT 4.0625MB FLSH 272BGADigiKey Programmable: Not Verified Number of I/O: 220 Part Status: Active Supplier Device Package: 272-BGA (16x16) Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Data Converters: A/D 90x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 EEPROM Size: 256K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 768K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 100MHz, 250MHz Mounting Type: Surface Mount Package / Case: 272-LFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
| CYT4BB5CEBQ0AESGST | Infineon Technologies |
Description: IC MCU 32BT 4.0625MB FLSH 100QFPNumber of I/O: 72 Part Status: Active Supplier Device Package: 100-TEQFP (14x14) Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Quad-Core Data Converters: A/D 55x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 EEPROM Size: 256K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 768K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 100MHz, 250MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | |||||||||||||||||
| CYT4BB5CEBQ0AEEGS | Infineon Technologies |
Description: IC MCU 32BT 4.0625MB FLSH 100QFPCore Size: 32-Bit Quad-Core Data Converters: A/D 55x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 EEPROM Size: 256K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 768K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 100MHz, 250MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Tray Number of I/O: 72 Part Status: Active Supplier Device Package: 100-TEQFP (14x14) Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | |||||||||||||||||
| CYT4BB5CEBQ0AEEGST | Infineon Technologies |
Description: IC MCU 32BT 4.0625MB FLSH 100QFPNumber of I/O: 72 Part Status: Active Supplier Device Package: 100-TEQFP (14x14) Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Quad-Core Data Converters: A/D 55x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 EEPROM Size: 256K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 768K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 100MHz, 250MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | |||||||||||||||||
| CYT3BBBCEBQ0BZSGST | Infineon Technologies |
Description: IC MCU 32BT 4.0625MB FLSH 272BGANumber of I/O: 220 Part Status: Active Supplier Device Package: 272-BGA (16x16) Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Data Converters: A/D 90x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 EEPROM Size: 256K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 768K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 100MHz, 250MHz Mounting Type: Surface Mount Package / Case: 272-LFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||
| CYT4BB5CEBQ0AESGS | Infineon Technologies |
Description: IC MCU 32BT 4.0625MB FLSH 100QFPNumber of I/O: 72 Part Status: Active Supplier Device Package: 100-TEQFP (14x14) Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Quad-Core Data Converters: A/D 55x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 EEPROM Size: 256K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 768K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 100MHz, 250MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | |||||||||||||||||
| CYT4A0100DQ0AESGS | Infineon Technologies |
Description: Auto MCU Packaging: Tray Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||||||||||
| XC164CM8F40FAAKXQMA1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB FLASHDigiKey Programmable: Not Verified Number of I/O: 47 Peripherals: PWM, WDT Connectivity: CANbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Core Size: 16-Bit Data Converters: A/D 14x8/10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 6K x 8 Program Memory Size: 64KB (64K x 8) Speed: 40MHz Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | |||||||||||||||||
| XC164CM8F40FAAFXQMA1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB FLASHDigiKey Programmable: Not Verified Number of I/O: 47 Peripherals: PWM, WDT Connectivity: CANbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Core Size: 16-Bit Data Converters: A/D 14x8/10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 6K x 8 Program Memory Size: 64KB (64K x 8) Speed: 40MHz Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | |||||||||||||||||
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FF1800R23IE7PBPSA1 | Infineon Technologies |
Description: IGBT MODULE Packaging: Bulk Input Capacitance (Cies) @ Vce: 420 nF @ 25 V Current - Collector Cutoff (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 2300 V Current - Collector (Ic) (Max): 1800 A Part Status: Active Supplier Device Package: PrimePACK™ 3+ NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.26V @ 15V, 1.8kA Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 Independent Input: Standard Mounting Type: Chassis Mount Package / Case: Module |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IRF8734PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 21A 8SODrive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.35V @ 50µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL01GT10TFI020 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 56TSOPDigiKey Programmable: Not Verified Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 56-TSOP Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Packaging: Tray Memory Organization: 128M x 8 |
на замовлення 904 шт: термін постачання 21-31 дні (днів) |
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| CY9BF122LQN-G-AVERE2 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 64QFNNumber of I/O: 50 Part Status: Active Supplier Device Package: 64-QFN (9x9) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 23x12b SAR; D/A 2x10b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 160KB (160K x 8) Speed: 72MHz Mounting Type: Surface Mount Package / Case: 64-VFQFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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CY9BF124KPMC-G-MNE2 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 48LQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 14x12b; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Part Status: Active Number of I/O: 35 DigiKey Programmable: Not Verified |
на замовлення 2270 шт: термін постачання 21-31 дні (днів) |
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CY9BF122MPMC-G-MNE2 | Infineon Technologies |
Description: IC MCU 32BIT 96KB FLASH 80LQFPPackaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 96KB (96K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 26x12b; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Part Status: Active Number of I/O: 65 DigiKey Programmable: Not Verified |
на замовлення 1290 шт: термін постачання 21-31 дні (днів) |
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CY9BF124LPMC1-G-MNE2 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 23x12b; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 50 DigiKey Programmable: Not Verified |
на замовлення 1596 шт: термін постачання 21-31 дні (днів) |
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CY9BF122MBGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 96FBGAOperating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 160KB (160K x 8) Speed: 72MHz Mounting Type: Surface Mount Package / Case: 96-LFBGA Packaging: Tray Number of I/O: 65 Part Status: Active Supplier Device Package: 96-FBGA (6x6) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 26x12b; D/A 2x10b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: Internal DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 4900 шт В кошику од. на суму грн. | ||||||||||||||||
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S70KL1283GABHI023 | Infineon Technologies |
Description: IC PSRAM 128MBIT SPI/OCTL 24FBGAOperating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 128Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Memory Organization: 16M x 8 Access Time: 35 ns Memory Interface: SPI - Octal I/O Write Cycle Time - Word, Page: 35ns Supplier Device Package: 24-FBGA (6x8) Memory Format: PSRAM Clock Frequency: 200 MHz Technology: PSRAM (Pseudo SRAM) Voltage - Supply: 2.7V ~ 3.6V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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IKW03N120H2FKSA1 | Infineon Technologies |
Description: IGBT 1200V 9.6A TO247-3Power - Max: 62.5 W Current - Collector Pulsed (Icm): 9.9 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 9.6 A Part Status: Obsolete Gate Charge: 22 nC Test Condition: 800V, 3A, 82Ohm, 15V Switching Energy: 290µJ Td (on/off) @ 25°C: 9.2ns/281ns Supplier Device Package: PG-TO247-3-1 Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Reverse Recovery Time (trr): 42 ns Input Type: Standard Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1100T038X0064AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 38TSSOPDigiKey Programmable: Not Verified Number of I/O: 26 Supplier Device Package: PG-TSSOP-38 Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 12x12b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 64KB (64K x 8) Speed: 32MHz Mounting Type: Surface Mount Package / Case: 38-TFSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1100T038X0064AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 38TSSOPData Converters: A/D 12x12b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 64KB (64K x 8) Speed: 32MHz Mounting Type: Surface Mount Package / Case: 38-TFSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Number of I/O: 26 Supplier Device Package: PG-TSSOP-38 Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Single-Core |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPA65R125C7 | Infineon Technologies |
Description: IPA65R125 - 650V AND 700V COOLMOInput Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220 Full Pack Vgs(th) (Max) @ Id: 4V @ 440µA Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 412 шт: термін постачання 21-31 дні (днів) |
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TLD2310ELXUMA1 | Infineon Technologies |
Description: TLD2310-ChannHigh-SiCurreSourcePackaging: Tape & Reel (TR) |
на замовлення 3460 шт: термін постачання 21-31 дні (днів) |
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IRFHM8228TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 19A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.8W (Ta), 34W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFHM8235TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 16A 8PQFNDrain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFHM8337TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 12A 8PQFNPower Dissipation (Max): 2.8W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFHM8337TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 12A 8PQFNCurrent - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.8W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFHM8334TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 13A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.7W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFHM8334TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 13A 8PQFNPackage / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.7W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EVAL2ED2101HBLLCTOBO2 | Infineon Technologies |
Description: EVAL BOARD FOR 2ED2101SPackaging: Bulk Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 2ED2101S, 2ED24427N Supplied Contents: Board(s) Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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EVAL4KVA230VAC5LINVTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 2EDF7275FPackaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 2EDF7275F, XMC7400 Supplied Contents: Board(s) Primary Attributes: 380V ~ 420V Supply Embedded: Yes, MCU, 32-Bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY62148EV30LL-45ZSXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIPackaging: Tape & Reel (TR) Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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CY62148EV30LL-45ZSXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIPackaging: Cut Tape (CT) Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 1187 шт: термін постачання 21-31 дні (днів) |
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CY62148EV30LL-45ZSXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIPackaging: Tray Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP II Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 262 шт: термін постачання 21-31 дні (днів) |
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CY62148EV30LL-45BVXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 36VFBGAPackaging: Tray Package / Case: 36-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-VFBGA (6x8) Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 1660 шт: термін постачання 21-31 дні (днів) |
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CY62148EV30LL-55SXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32SOICPackaging: Tape & Reel (TR) Package / Case: 32-SOIC (0.445", 11.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOIC Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CY62148EV30LL-55SXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32SOICPackaging: Cut Tape (CT) Package / Case: 32-SOIC (0.445", 11.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOIC Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CY62148EV30LL-55SXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32SOICPackaging: Tube Package / Case: 32-SOIC (0.445", 11.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOIC Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 457 шт: термін постачання 21-31 дні (днів) |
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| S25FL064LABBHI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.59 грн |
| 10+ | 100.66 грн |
| 25+ | 97.78 грн |
| 50+ | 89.75 грн |
| 100+ | 87.70 грн |
| S25FL064LABBHI030 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
на замовлення 1928 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.63 грн |
| 10+ | 164.91 грн |
| 25+ | 162.34 грн |
| 40+ | 151.94 грн |
| 80+ | 135.77 грн |
| 338+ | 131.31 грн |
| 676+ | 128.69 грн |
| 1014+ | 119.83 грн |
| S25FL064P0XBHI030 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
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| S25FL064LABBHV020 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.34 грн |
| 10+ | 107.75 грн |
| 25+ | 104.71 грн |
| 50+ | 96.09 грн |
| 100+ | 93.90 грн |
| 338+ | 90.05 грн |
| S25FL064P0XMFI003 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
DigiKey Programmable: Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
DigiKey Programmable: Verified
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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| S25FL064LABNFM041 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8USON
Description: IC FLASH 64MBIT SPI/QUAD 8USON
товару немає в наявності
Мінімальне замовлення: 1845 шт
В кошику
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| S25FL064LABMFV003 |
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Виробник: Infineon Technologies
Description: IC FLASH 64BIT SPI 16SOIC
Description: IC FLASH 64BIT SPI 16SOIC
товару немає в наявності
Мінімальне замовлення: 1450 шт
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од. на суму грн.
| IRLR3714ZTRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 37A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 37A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| IRLR3714ZTRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 37A DPAK
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Description: MOSFET N-CH 20V 37A DPAK
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
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| IQE050N08NM5CGSCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
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| IQE050N08NM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
на замовлення 5817 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.37 грн |
| 10+ | 144.09 грн |
| 100+ | 100.47 грн |
| 500+ | 81.78 грн |
| IQE030N06NM5CGSCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
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од. на суму грн.
| IQE030N06NM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
на замовлення 5476 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.97 грн |
| 10+ | 156.55 грн |
| 100+ | 109.58 грн |
| 500+ | 90.70 грн |
| IQE006NE2LM5CGSCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Tape & Reel (TR)
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| IQE006NE2LM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Package / Case: 9-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Package / Case: 9-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 310A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 413 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 250.30 грн |
| 10+ | 157.30 грн |
| 100+ | 109.59 грн |
| IQE013N04LM6CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6000+ | 80.30 грн |
| IQE013N04LM6CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-WHTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
на замовлення 29322 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.14 грн |
| 10+ | 164.39 грн |
| 100+ | 115.01 грн |
| 500+ | 88.82 грн |
| IQE065N10NM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| IQE065N10NM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Cut Tape (CT)
Description: OPTIMOS LOWVOLTAGE POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-WHTFN-9-1
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| CYPD3195-24LDXS |
![]() |
Виробник: Infineon Technologies
Description: CCG3PA
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Core Processor: ARM® Cortex®-M0
Applications: USB Type C
Program Memory Type: FLASH (64kB)
Voltage - Supply: 3V ~ 24.5V
Operating Temperature: -40°C ~ 105°C
RAM Size: 8K x 8
Interface: I2C, SPI, UART, USB
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Description: CCG3PA
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Core Processor: ARM® Cortex®-M0
Applications: USB Type C
Program Memory Type: FLASH (64kB)
Voltage - Supply: 3V ~ 24.5V
Operating Temperature: -40°C ~ 105°C
RAM Size: 8K x 8
Interface: I2C, SPI, UART, USB
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2450 шт
В кошику
од. на суму грн.
| CYT3BBBCEBQ0BZEGS |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+/M7
Data Converters: A/D 90x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Part Status: Active
Number of I/O: 220
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+/M7
Data Converters: A/D 90x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Part Status: Active
Number of I/O: 220
DigiKey Programmable: Not Verified
на замовлення 596 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1648.23 грн |
| 10+ | 1275.87 грн |
| 96+ | 1114.68 грн |
| 192+ | 1015.93 грн |
| 288+ | 1000.83 грн |
| 576+ | 978.69 грн |
| CYT3BBBCEBQ0BZSGS |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Part Status: Active
Supplier Device Package: 272-BGA (16x16)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 90x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 272-LFBGA
Packaging: Tray
Number of I/O: 220
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Part Status: Active
Supplier Device Package: 272-BGA (16x16)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 90x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 272-LFBGA
Packaging: Tray
Number of I/O: 220
товару немає в наявності
Мінімальне замовлення: 960 шт
В кошику
од. на суму грн.
| CYT3BBBCEBQ0BZEGST |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
DigiKey Programmable: Not Verified
Number of I/O: 220
Part Status: Active
Supplier Device Package: 272-BGA (16x16)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 90x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 272-LFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
DigiKey Programmable: Not Verified
Number of I/O: 220
Part Status: Active
Supplier Device Package: 272-BGA (16x16)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 90x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 272-LFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| CYT4BB5CEBQ0AESGST |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Number of I/O: 72
Part Status: Active
Supplier Device Package: 100-TEQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 55x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Number of I/O: 72
Part Status: Active
Supplier Device Package: 100-TEQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 55x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| CYT4BB5CEBQ0AEEGS |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Core Size: 32-Bit Quad-Core
Data Converters: A/D 55x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
Number of I/O: 72
Part Status: Active
Supplier Device Package: 100-TEQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Core Size: 32-Bit Quad-Core
Data Converters: A/D 55x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
Number of I/O: 72
Part Status: Active
Supplier Device Package: 100-TEQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| CYT4BB5CEBQ0AEEGST |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Number of I/O: 72
Part Status: Active
Supplier Device Package: 100-TEQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 55x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Number of I/O: 72
Part Status: Active
Supplier Device Package: 100-TEQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 55x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| CYT3BBBCEBQ0BZSGST |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Number of I/O: 220
Part Status: Active
Supplier Device Package: 272-BGA (16x16)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 90x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 272-LFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BT 4.0625MB FLSH 272BGA
Number of I/O: 220
Part Status: Active
Supplier Device Package: 272-BGA (16x16)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 90x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 272-LFBGA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 800 шт
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| CYT4BB5CEBQ0AESGS |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Number of I/O: 72
Part Status: Active
Supplier Device Package: 100-TEQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 55x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
Description: IC MCU 32BT 4.0625MB FLSH 100QFP
Number of I/O: 72
Part Status: Active
Supplier Device Package: 100-TEQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 55x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
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| XC164CM8F40FAAKXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH
DigiKey Programmable: Not Verified
Number of I/O: 47
Peripherals: PWM, WDT
Connectivity: CANbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 6K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 40MHz
Packaging: Tray
Description: IC MCU 16BIT 64KB FLASH
DigiKey Programmable: Not Verified
Number of I/O: 47
Peripherals: PWM, WDT
Connectivity: CANbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 6K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 40MHz
Packaging: Tray
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Мінімальне замовлення: 960 шт
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| XC164CM8F40FAAFXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH
DigiKey Programmable: Not Verified
Number of I/O: 47
Peripherals: PWM, WDT
Connectivity: CANbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 6K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 40MHz
Packaging: Tray
Description: IC MCU 16BIT 64KB FLASH
DigiKey Programmable: Not Verified
Number of I/O: 47
Peripherals: PWM, WDT
Connectivity: CANbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 6K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 40MHz
Packaging: Tray
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Мінімальне замовлення: 960 шт
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| FF1800R23IE7PBPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
Current - Collector Cutoff (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 2300 V
Current - Collector (Ic) (Max): 1800 A
Part Status: Active
Supplier Device Package: PrimePACK™ 3+
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.26V @ 15V, 1.8kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Description: IGBT MODULE
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
Current - Collector Cutoff (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 2300 V
Current - Collector (Ic) (Max): 1800 A
Part Status: Active
Supplier Device Package: PrimePACK™ 3+
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.26V @ 15V, 1.8kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 133220.58 грн |
| IRF8734PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Description: MOSFET N-CH 30V 21A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
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| S29GL01GT10TFI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Memory Organization: 128M x 8
Description: IC FLASH 1GBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Memory Organization: 128M x 8
на замовлення 904 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 966.31 грн |
| 10+ | 863.36 грн |
| 25+ | 836.41 грн |
| 91+ | 749.58 грн |
| 182+ | 730.88 грн |
| 273+ | 720.07 грн |
| 546+ | 690.32 грн |
| CY9BF122LQN-G-AVERE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Number of I/O: 50
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 64QFN
Number of I/O: 50
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 23x12b SAR; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| CY9BF124KPMC-G-MNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 14x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 14x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
на замовлення 2270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 475.02 грн |
| 10+ | 352.14 грн |
| 25+ | 325.88 грн |
| 100+ | 278.78 грн |
| 250+ | 265.90 грн |
| 500+ | 258.13 грн |
| 1000+ | 247.60 грн |
| CY9BF122MPMC-G-MNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 96KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
на замовлення 1290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 525.39 грн |
| 10+ | 391.09 грн |
| 25+ | 362.45 грн |
| 119+ | 307.58 грн |
| 357+ | 291.87 грн |
| 595+ | 286.06 грн |
| 1071+ | 275.73 грн |
| CY9BF124LPMC1-G-MNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1596 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 494.39 грн |
| 10+ | 367.73 грн |
| 25+ | 340.51 грн |
| 160+ | 284.22 грн |
| 320+ | 275.07 грн |
| 640+ | 267.55 грн |
| 1120+ | 258.16 грн |
| CY9BF122MBGL-GK9E1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 96FBGA
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
Number of I/O: 65
Part Status: Active
Supplier Device Package: 96-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 26x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 96FBGA
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Packaging: Tray
Number of I/O: 65
Part Status: Active
Supplier Device Package: 96-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 26x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 4900 шт
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| S70KL1283GABHI023 |
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Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT SPI/OCTL 24FBGA
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Access Time: 35 ns
Memory Interface: SPI - Octal I/O
Write Cycle Time - Word, Page: 35ns
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Description: IC PSRAM 128MBIT SPI/OCTL 24FBGA
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Access Time: 35 ns
Memory Interface: SPI - Octal I/O
Write Cycle Time - Word, Page: 35ns
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 200 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 2.7V ~ 3.6V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| IKW03N120H2FKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 1200V 9.6A TO247-3
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 9.9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 9.6 A
Part Status: Obsolete
Gate Charge: 22 nC
Test Condition: 800V, 3A, 82Ohm, 15V
Switching Energy: 290µJ
Td (on/off) @ 25°C: 9.2ns/281ns
Supplier Device Package: PG-TO247-3-1
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Reverse Recovery Time (trr): 42 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 1200V 9.6A TO247-3
Power - Max: 62.5 W
Current - Collector Pulsed (Icm): 9.9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 9.6 A
Part Status: Obsolete
Gate Charge: 22 nC
Test Condition: 800V, 3A, 82Ohm, 15V
Switching Energy: 290µJ
Td (on/off) @ 25°C: 9.2ns/281ns
Supplier Device Package: PG-TO247-3-1
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Reverse Recovery Time (trr): 42 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| XMC1100T038X0064AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
DigiKey Programmable: Not Verified
Number of I/O: 26
Supplier Device Package: PG-TSSOP-38
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
DigiKey Programmable: Not Verified
Number of I/O: 26
Supplier Device Package: PG-TSSOP-38
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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| XMC1100T038X0064AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 26
Supplier Device Package: PG-TSSOP-38
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 26
Supplier Device Package: PG-TSSOP-38
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
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| IPA65R125C7 |
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Виробник: Infineon Technologies
Description: IPA65R125 - 650V AND 700V COOLMO
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: IPA65R125 - 650V AND 700V COOLMO
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 111+ | 210.00 грн |
| TLD2310ELXUMA1 |
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Виробник: Infineon Technologies
Description: TLD2310-ChannHigh-SiCurreSource
Packaging: Tape & Reel (TR)
Description: TLD2310-ChannHigh-SiCurreSource
Packaging: Tape & Reel (TR)
на замовлення 3460 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 349+ | 58.41 грн |
| IRFHM8228TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 19A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 19A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| IRFHM8235TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 16A 8PQFN
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Description: MOSFET N-CH 25V 16A 8PQFN
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
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| IRFHM8337TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8PQFN
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Description: MOSFET N-CH 30V 12A 8PQFN
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
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| IRFHM8337TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8PQFN
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Description: MOSFET N-CH 30V 12A 8PQFN
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
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| IRFHM8334TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 13A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| IRFHM8334TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8PQFN
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
Description: MOSFET N-CH 30V 13A 8PQFN
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
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| EVAL2ED2101HBLLCTOBO2 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2ED2101S
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2101S, 2ED24427N
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR 2ED2101S
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2101S, 2ED24427N
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 23709.07 грн |
| EVAL4KVA230VAC5LINVTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EDF7275F
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDF7275F, XMC7400
Supplied Contents: Board(s)
Primary Attributes: 380V ~ 420V Supply
Embedded: Yes, MCU, 32-Bit
Description: EVAL BOARD FOR 2EDF7275F
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDF7275F, XMC7400
Supplied Contents: Board(s)
Primary Attributes: 380V ~ 420V Supply
Embedded: Yes, MCU, 32-Bit
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| CY62148EV30LL-45ZSXIT |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 237.38 грн |
| CY62148EV30LL-45ZSXIT |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1187 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.34 грн |
| 10+ | 268.26 грн |
| 25+ | 260.31 грн |
| 50+ | 238.64 грн |
| 100+ | 233.00 грн |
| 250+ | 225.58 грн |
| 500+ | 216.41 грн |
| CY62148EV30LL-45ZSXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 262 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.34 грн |
| 10+ | 268.26 грн |
| 25+ | 260.31 грн |
| 50+ | 238.64 грн |
| 117+ | 231.73 грн |
| CY62148EV30LL-45BVXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36VFBGA
Packaging: Tray
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 36VFBGA
Packaging: Tray
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1660 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 342.51 грн |
| 10+ | 307.06 грн |
| 25+ | 297.95 грн |
| 50+ | 273.11 грн |
| 100+ | 266.62 грн |
| 480+ | 252.08 грн |
| 960+ | 241.74 грн |
| 1440+ | 238.15 грн |
| CY62148EV30LL-55SXIT |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY62148EV30LL-55SXIT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY62148EV30LL-55SXI |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 457 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 404.50 грн |
| 10+ | 362.51 грн |
| 25+ | 351.61 грн |
| 50+ | 322.27 грн |
| 100+ | 314.58 грн |
| 250+ | 304.48 грн |


























