Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149665) > Сторінка 488 з 2495
| Фото | Назва | Виробник | Інформація |
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S29GL01GT11DHIV10 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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S29GL256S90TFI023 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 56TSOPPackaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
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S29GL01GT11DHIV20 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL512S10DHA020 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL01GT11DHV020 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL01GT11DHV010 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BFP640H6327 | Infineon Technologies |
Description: RF BIPOLAR TRANSISTOR |
на замовлення 2848 шт: термін постачання 21-31 дні (днів) |
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ESD132B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODESPackaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
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ESD132B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODESPackaging: Cut Tape (CT) Part Status: Active |
на замовлення 7859 шт: термін постачання 21-31 дні (днів) |
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S25FL256SAGMFV011 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FL256SAGMFV011 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC |
на замовлення 618 шт: термін постачання 21-31 дні (днів) |
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S25FL256SAGMFBG00 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 4790 шт: термін постачання 21-31 дні (днів) |
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IRG4BC20SPBFXKMA1 | Infineon Technologies |
Description: IGBT 600V 19A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 27ns/540ns Switching Energy: 120µJ (on), 2.05mJ (off) Test Condition: 480V, 10A, 50Ohm, 15V Gate Charge: 27 nC Part Status: Obsolete Current - Collector (Ic) (Max): 19 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 38 A Power - Max: 60 W |
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IFX25001TSV10AKSA1 | Infineon Technologies |
Description: IC REG LINEAR VOLTAGE REGPackaging: Bulk Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 400mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO220-3-1 Voltage - Output (Min/Fixed): 1V Grade: Automotive PSRR: 60dB (100Hz) Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
на замовлення 17645 шт: термін постачання 21-31 дні (днів) |
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IFX25001TCV10ATMA1 | Infineon Technologies |
Description: IC REG LINEAR VOLTAGE REG |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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IFX25001TCV85 | Infineon Technologies |
Description: IC REG LINEAR VOLTAGE REGPackaging: Bulk Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-3-1 Voltage - Output (Min/Fixed): 8.5V Part Status: Active PSRR: 60dB (100Hz) Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA |
на замовлення 16626 шт: термін постачання 21-31 дні (днів) |
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IFX25001TCV10 | Infineon Technologies |
Description: IC REG LINEAR VOLTAGE REGPackaging: Bulk Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-3 Voltage - Output (Min/Fixed): 10V PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IFX25001TCV85ATMA1 | Infineon Technologies |
Description: IC REG LIN 8.5V 400MA TO263-3-1Packaging: Bulk Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-3-1 Voltage - Output (Min/Fixed): 8.5V Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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TLE4274GV85-2 | Infineon Technologies |
Description: IC REG LINEAR FIXED LDO REGPackaging: Bulk Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-3-1 Voltage - Output (Min/Fixed): 8.5V Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA |
на замовлення 650 шт: термін постачання 21-31 дні (днів) |
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IFX25001TC | Infineon Technologies |
Description: IC REG LINEAR VOLTAGE REGPackaging: Bulk Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-3-1 Voltage - Output (Min/Fixed): 8.5V Part Status: Active PSRR: 60dB (100Hz) Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TLF2931G V50 | Infineon Technologies |
Description: IC REG LINEAR FIXED LDO REG |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SMBTA56E6433HTMA1 | Infineon Technologies |
Description: TRANS PNP 80V 0.5A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 330 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBTA56E6433HTMA1 | Infineon Technologies |
Description: TRANS PNP 80V 0.5A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 330 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBTA56E6327HTSA1 | Infineon Technologies |
Description: TRANS PNP 80V 0.5A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 330 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBTA56E6327HTSA1 | Infineon Technologies |
Description: TRANS PNP 80V 0.5A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 330 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGA751N7E6327XTSA1 | Infineon Technologies |
Description: IC AMP CELLULAR 850MHZ TSNP7-1Packaging: Bulk Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 850MHz RF Type: Cellular Voltage - Supply: 2.6V ~ 3V Gain: 15.3dB Current - Supply: 3.3mA Noise Figure: 1.1dB Test Frequency: 850MHz Supplier Device Package: TSNP-7-1 |
на замовлення 13991 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 300A HSOG-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N014ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 300A HSOG-8Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N011ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( PG-HSOG-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 410A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IAUT300N08S5N011ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( PG-HSOF-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 410A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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IPTC011N08NM5ATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IPTC011N08NM5ATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFETPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V |
на замовлення 2562 шт: термін постачання 21-31 дні (днів) |
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KITLGPWRBOM003TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IPT012N08N5Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: IPT012N08N5 Supplied Contents: Board(s) Primary Attributes: 48V Supply Secondary Attributes: On-Board Test Points Embedded: No Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IPT012N08NF2SATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-HSOF-8-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPT012N08NF2SATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-HSOF-8-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V |
на замовлення 39 шт: термін постачання 21-31 дні (днів) |
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XMC1402T038X0032AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 38TSSOPPackaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1402T038X0032AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 38TSSOPPackaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 2764 шт: термін постачання 21-31 дні (днів) |
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IPD50R950CEAUMA1 | Infineon Technologies |
Description: CONSUMERPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD50R950CEAUMA1 | Infineon Technologies |
Description: CONSUMERPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V |
на замовлення 1214 шт: термін постачання 21-31 дні (днів) |
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IRLR3802TRPBF | Infineon Technologies |
Description: MOSFET N-CH 12V 84A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPS60R1K0CEAKMA1 | Infineon Technologies |
Description: CONSUMERPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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IPS60R3K4CEAKMA1 | Infineon Technologies |
Description: CONSUMERPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPS60R280PFD7SAKMA1 | Infineon Technologies |
Description: CONSUMER PG-TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 180µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRAM136-1061A | Infineon Technologies |
Description: IC HYBRID PWR 600V 12A SIP05Packaging: Tube Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 12 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IGP30N65H5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 55A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: PG-TO220-3 IGBT Type: Trench Td (on/off) @ 25°C: 19ns/177ns Switching Energy: 280µJ (on), 100µJ (off) Test Condition: 400V, 15A, 23Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 188 W |
на замовлення 4239 шт: термін постачання 21-31 дні (днів) |
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1ED3127MU12FXUMA1 | Infineon Technologies |
Description: DGTL ISO 3KV 1CH GT DVR DSO8-72Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 10A Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 3000Vrms Supplier Device Package: PG-DSO-8-72 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 100ns, 100ns Pulse Width Distortion (Max): 5ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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1ED3127MU12FXUMA1 | Infineon Technologies |
Description: DGTL ISO 3KV 1CH GT DVR DSO8-72Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 10A Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 3000Vrms Supplier Device Package: PG-DSO-8-72 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 100ns, 100ns Pulse Width Distortion (Max): 5ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 5305 шт: термін постачання 21-31 дні (днів) |
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TLE9250LEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 TSON-8Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 100 mV Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE9250LEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 TSON-8Packaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 100 mV Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 3805 шт: термін постачання 21-31 дні (днів) |
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F3L300R12PT4PB26BOSA1 | Infineon Technologies |
Description: IGBT MODULE MED POWER ECONO4-1 Packaging: Bulk |
на замовлення 335 шт: термін постачання 21-31 дні (днів) |
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F3L300R12PT4PB26BOSA1 | Infineon Technologies |
Description: IGBT MODULE MED POWER ECONO4-1 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3621MTR | Infineon Technologies |
Description: IC REG CTRLR BUCK 32MLPQPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz ~ 500kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 5.5V ~ 14.5V Supplier Device Package: 32-MLPQ (5x5) Synchronous Rectifier: Yes Control Features: Frequency Control, Power Good, Soft Start Output Phases: 2 Duty Cycle (Max): 86.5% Clock Sync: Yes Part Status: Obsolete Number of Outputs: 2 |
на замовлення 4121 шт: термін постачання 21-31 дні (днів) |
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S29GL512T10FHI023 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL512T10FAI020 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL512T10DHA010 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL512T10DHA013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL512T10FAI010 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL512T10TFA023 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL512T10FAI023 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL512T10TFA020 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOP |
товару немає в наявності |
В кошику од. на суму грн. |
| S29GL01GT11DHIV10 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| S29GL256S90TFI023 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| S29GL01GT11DHIV20 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| S29GL512S10DHA020 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| S29GL01GT11DHV020 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| S29GL01GT11DHV010 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BFP640H6327 |
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Виробник: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Description: RF BIPOLAR TRANSISTOR
на замовлення 2848 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1866+ | 13.34 грн |
| ESD132B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Part Status: Active
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| ESD132B1W0201E6327XTSA1 |
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на замовлення 7859 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.33 грн |
| 49+ | 6.57 грн |
| 100+ | 3.51 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.85 грн |
| 2000+ | 2.82 грн |
| 5000+ | 2.74 грн |
| S25FL256SAGMFV011 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
товару немає в наявності
В кошику
од. на суму грн.
| S25FL256SAGMFV011 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
на замовлення 618 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 66+ | 304.50 грн |
| S25FL256SAGMFBG00 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 4790 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 688.97 грн |
| 10+ | 610.25 грн |
| 25+ | 597.52 грн |
| 40+ | 558.82 грн |
| 80+ | 501.43 грн |
| 240+ | 486.28 грн |
| 480+ | 454.83 грн |
| 960+ | 438.98 грн |
| IRG4BC20SPBFXKMA1 |
Виробник: Infineon Technologies
Description: IGBT 600V 19A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/540ns
Switching Energy: 120µJ (on), 2.05mJ (off)
Test Condition: 480V, 10A, 50Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 38 A
Power - Max: 60 W
Description: IGBT 600V 19A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/540ns
Switching Energy: 120µJ (on), 2.05mJ (off)
Test Condition: 480V, 10A, 50Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 38 A
Power - Max: 60 W
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| IFX25001TSV10AKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 1V
Grade: Automotive
PSRR: 60dB (100Hz)
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 1V
Grade: Automotive
PSRR: 60dB (100Hz)
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
на замовлення 17645 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 630+ | 36.95 грн |
| IFX25001TCV10ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Description: IC REG LINEAR VOLTAGE REG
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 726+ | 35.13 грн |
| IFX25001TCV85 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Part Status: Active
PSRR: 60dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Part Status: Active
PSRR: 60dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
на замовлення 16626 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 670+ | 33.73 грн |
| IFX25001TCV10 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3
Voltage - Output (Min/Fixed): 10V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3
Voltage - Output (Min/Fixed): 10V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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| IFX25001TCV85ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 550+ | 39.76 грн |
| TLE4274GV85-2 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
на замовлення 650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 392+ | 57.72 грн |
| IFX25001TC |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Part Status: Active
PSRR: 60dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Part Status: Active
PSRR: 60dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 742+ | 29.98 грн |
| TLF2931G V50 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Description: IC REG LINEAR FIXED LDO REG
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 609+ | 40.86 грн |
| SMBTA56E6433HTMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 80V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Description: TRANS PNP 80V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
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од. на суму грн.
| SMBTA56E6433HTMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 80V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Description: TRANS PNP 80V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
товару немає в наявності
В кошику
од. на суму грн.
| SMBTA56E6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 80V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Description: TRANS PNP 80V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
товару немає в наявності
В кошику
од. на суму грн.
| SMBTA56E6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 80V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Description: TRANS PNP 80V 0.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
товару немає в наявності
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од. на суму грн.
| BGA751N7E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP CELLULAR 850MHZ TSNP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 850MHz
RF Type: Cellular
Voltage - Supply: 2.6V ~ 3V
Gain: 15.3dB
Current - Supply: 3.3mA
Noise Figure: 1.1dB
Test Frequency: 850MHz
Supplier Device Package: TSNP-7-1
Description: IC AMP CELLULAR 850MHZ TSNP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 850MHz
RF Type: Cellular
Voltage - Supply: 2.6V ~ 3V
Gain: 15.3dB
Current - Supply: 3.3mA
Noise Figure: 1.1dB
Test Frequency: 850MHz
Supplier Device Package: TSNP-7-1
на замовлення 13991 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 742+ | 31.48 грн |
| IAUS300N08S5N014ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 300A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 300A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1800+ | 173.28 грн |
| IAUS300N08S5N014ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 300A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 300A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 452.19 грн |
| IAUS300N08S5N011ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V( PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
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| IAUT300N08S5N011ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 164.33 грн |
| IPTC011N08NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1800+ | 276.06 грн |
| IPTC011N08NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
на замовлення 2562 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 610.05 грн |
| 10+ | 400.77 грн |
| 100+ | 316.09 грн |
| 500+ | 290.96 грн |
| KITLGPWRBOM003TOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IPT012N08N5
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IPT012N08N5
Supplied Contents: Board(s)
Primary Attributes: 48V Supply
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR IPT012N08N5
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IPT012N08N5
Supplied Contents: Board(s)
Primary Attributes: 48V Supply
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4162.62 грн |
| IPT012N08NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
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| IPT012N08NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 393.82 грн |
| 10+ | 272.19 грн |
| XMC1402T038X0032AAXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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| XMC1402T038X0032AAXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 2764 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.47 грн |
| 10+ | 151.14 грн |
| 25+ | 138.20 грн |
| 100+ | 116.38 грн |
| 250+ | 110.03 грн |
| 500+ | 106.20 грн |
| 1000+ | 101.36 грн |
| IPD50R950CEAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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| IPD50R950CEAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
на замовлення 1214 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.69 грн |
| 10+ | 36.02 грн |
| 100+ | 24.68 грн |
| 500+ | 17.76 грн |
| 1000+ | 16.01 грн |
| IRLR3802TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 12V 84A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
Description: MOSFET N-CH 12V 84A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
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| IPS60R1K0CEAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tj)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1039+ | 21.94 грн |
| IPS60R3K4CEAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
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| IPS60R280PFD7SAKMA1 |
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Виробник: Infineon Technologies
Description: CONSUMER PG-TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Description: CONSUMER PG-TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
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| IRAM136-1061A |
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Виробник: Infineon Technologies
Description: IC HYBRID PWR 600V 12A SIP05
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 12 A
Voltage: 600 V
Description: IC HYBRID PWR 600V 12A SIP05
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 12 A
Voltage: 600 V
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| IGP30N65H5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/177ns
Switching Energy: 280µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Description: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/177ns
Switching Energy: 280µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
на замовлення 4239 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 243.36 грн |
| 50+ | 117.17 грн |
| 100+ | 105.80 грн |
| 500+ | 80.56 грн |
| 1000+ | 74.55 грн |
| 2000+ | 69.49 грн |
| 1ED3127MU12FXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISO 3KV 1CH GT DVR DSO8-72
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 10A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Supplier Device Package: PG-DSO-8-72
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGTL ISO 3KV 1CH GT DVR DSO8-72
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 10A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Supplier Device Package: PG-DSO-8-72
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 68.73 грн |
| 5000+ | 64.76 грн |
| 1ED3127MU12FXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISO 3KV 1CH GT DVR DSO8-72
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 10A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Supplier Device Package: PG-DSO-8-72
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGTL ISO 3KV 1CH GT DVR DSO8-72
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 10A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Supplier Device Package: PG-DSO-8-72
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 100ns, 100ns
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 5305 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.84 грн |
| 10+ | 96.04 грн |
| 25+ | 87.44 грн |
| 100+ | 73.19 грн |
| 250+ | 68.97 грн |
| 500+ | 66.42 грн |
| 1000+ | 63.27 грн |
| TLE9250LEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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| TLE9250LEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3805 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.68 грн |
| 10+ | 105.14 грн |
| 25+ | 99.22 грн |
| 100+ | 79.35 грн |
| 250+ | 74.50 грн |
| 500+ | 65.19 грн |
| 1000+ | 53.13 грн |
| 2500+ | 49.46 грн |
| F3L300R12PT4PB26BOSA1 |
на замовлення 335 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 11521.01 грн |
| IR3621MTR |
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Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 500kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Frequency Control, Power Good, Soft Start
Output Phases: 2
Duty Cycle (Max): 86.5%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 2
Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 500kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Frequency Control, Power Good, Soft Start
Output Phases: 2
Duty Cycle (Max): 86.5%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 2
на замовлення 4121 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 168.54 грн |
| 10+ | 144.09 грн |
| 25+ | 139.34 грн |
| 100+ | 125.80 грн |
| 250+ | 123.39 грн |
| 500+ | 121.93 грн |
| 1000+ | 118.74 грн |
| S29GL512T10FHI023 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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| S29GL512T10FAI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Description: IC FLASH 512MBIT PARALLEL 64FBGA
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| S29GL512T10DHA010 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Description: IC FLASH 512MBIT PARALLEL 64FBGA
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| S29GL512T10DHA013 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Description: IC FLASH 512MBIT PARALLEL 64FBGA
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| S29GL512T10FAI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Description: IC FLASH 512MBIT PARALLEL 64FBGA
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| S29GL512T10TFA023 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Description: IC FLASH 512MBIT PARALLEL 56TSOP
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| S29GL512T10FAI023 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Description: IC FLASH 512MBIT PARALLEL 64FBGA
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| S29GL512T10TFA020 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Description: IC FLASH 512MBIT PARALLEL 56TSOP
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