Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124875) > Сторінка 517 з 2082
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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CY9AF116MPMC-GNE1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 80LQFP Core Size: 32-Bit Single-Core Data Converters: A/D 12x12b SAR Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 32K x 8 Program Memory Size: 512KB (512K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tray Number of I/O: 66 Part Status: Active Supplier Device Package: 80-LQFP (12x12) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V |
товару немає в наявності |
Мінімальне замовлення: 1190 шт В кошику од. на суму грн. | ||||||||||||||||
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S29GL128S10DHI010 | Infineon Technologies |
Description: IC FLASH 128MBIT PARALLEL 64FBGAMemory Organization: 8M x 16 Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 64-FBGA (9x9) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 128Mbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
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| BSM10GP60BOSA1 | Infineon Technologies |
Description: BSM10GP60 - IGBT MODULE 600V 20APart Status: Active Packaging: Bulk |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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| CYPD7299-68LDXST | Infineon Technologies |
Description: CCG7D DigiKey Programmable: Not Verified Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
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IKQ120N120CS7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 216A TO247Switching Energy: 10.3mJ (on), 5.72mJ (off) Td (on/off) @ 25°C: 44ns/205ns Power - Max: 1004 W Current - Collector Pulsed (Icm): 360 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 216 A Gate Charge: 710 nC IGBT Type: Trench Field Stop Supplier Device Package: PG-TO247-3-46 Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A Reverse Recovery Time (trr): 205 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Part Status: Active Packaging: Tube |
на замовлення 278 шт: термін постачання 21-31 дні (днів) |
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IGQ120N120S7XKSA1 | Infineon Technologies |
Description: IGBTPackaging: Tube Part Status: Active Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A Supplier Device Package: PG-TO247-3-U01 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/215ns Switching Energy: 10.3mJ (on), 5.72mJ (off) Test Condition: 600V, 120A, 1.3Ohm, 15V Gate Charge: 710 nC Current - Collector (Ic) (Max): 216 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 360 A Power - Max: 1000 W |
на замовлення 181 шт: термін постачання 21-31 дні (днів) |
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BTS70082EPZXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-14Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3144 шт: термін постачання 21-31 дні (днів) |
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BSZ0804LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 11A/40A TSDSONFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8 FL Vgs(th) (Max) @ Id: 2.3V @ 36µA Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSZ0804LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 11A/40A TSDSONInput Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8 FL Vgs(th) (Max) @ Id: 2.3V @ 36µA Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISZ0804NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 11A/58A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 28µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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ISZ0804NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 11A/58A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 28µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSZ088N03MSG | Infineon Technologies |
Description: BSZ088N03 - 12V-300V N-CHANNEL PInput Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TSDSON-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSZ0803LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 9A/40A TSDSONInput Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8 FL Vgs(th) (Max) @ Id: 2.3V @ 23µA Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSZ0803LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 9A/40A TSDSONInput Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8 FL Vgs(th) (Max) @ Id: 2.3V @ 23µA Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S6SBP202A1FVA1001 | Infineon Technologies |
Description: EVAL BOARD FOR S6BP202APart Status: Active Outputs and Type: 1 Non-Isolated Output Main Purpose: DC/DC, Step Up or Down Supplied Contents: Board(s) Utilized IC / Part: S6BP202A Board Type: Fully Populated Regulator Topology: Buck-Boost Current - Output: 2.4A Voltage - Input: 2.5V ~ 42V Voltage - Output: 5V Packaging: Box Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFSL3206PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V |
на замовлення 971 шт: термін постачання 21-31 дні (днів) |
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IMBG65R048M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 6mA Power Dissipation (Max): 183W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IMBG65R048M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 6mA Power Dissipation (Max): 183W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 938 шт: термін постачання 21-31 дні (днів) |
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IMBG65R057M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 5mA Power Dissipation (Max): 161W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IMBG65R057M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 5mA Power Dissipation (Max): 161W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 991 шт: термін постачання 21-31 дні (днів) |
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IMBG65R083M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Power Dissipation (Max): 126W (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IMBG65R083M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Power Dissipation (Max): 126W (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IMBG65R107M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 2.6mA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IMBG65R107M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 2.6mA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 784 шт: термін постачання 21-31 дні (днів) |
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| TZ740N22KS01HPSA3 | Infineon Technologies |
Description: MOODULECurrent - On State (It (RMS)) (Max): 1500 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 819 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 500 mA Structure: Single Operating Temperature: 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Voltage - Off State: 2.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLE9261BQXXUMA2 | Infineon Technologies |
Description: OPTIREG SYST BASIS CHIPSPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 28V Applications: System Basis Chip Current - Supply: 3.5mA Supplier Device Package: PG-VQFN-48-79 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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CY8C4013LQI-411T | Infineon Technologies |
Description: IC MCU 32BIT 8KB FLASH 16QFNDigiKey Programmable: Not Verified Number of I/O: 12 Part Status: Active Supplier Device Package: 16-QFN (3x3) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: I2C Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 8KB (8K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 16-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CY8C4013LQI-411T | Infineon Technologies |
Description: IC MCU 32BIT 8KB FLASH 16QFNDigiKey Programmable: Not Verified Number of I/O: 12 Part Status: Active Supplier Device Package: 16-QFN (3x3) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: I2C Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 8KB (8K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 16-UFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 7158 шт: термін постачання 21-31 дні (днів) |
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CY8C3244LTI-130 | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 68QFNNumber of I/O: 38 Part Status: Active Supplier Device Package: 68-QFN (8x8) Peripherals: CapSense, DMA, POR, PWM, WDT Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 16x12b; D/A 1x8b Core Processor: 8051 EEPROM Size: 512 x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 16KB (16K x 8) Speed: 50MHz Mounting Type: Surface Mount Package / Case: 68-VFQFN Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 2519 шт: термін постачання 21-31 дні (днів) |
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CY8C3245AXI-158 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 100TQFPRAM Size: 4K x 8 Program Memory Size: 32KB (32K x 8) Speed: 50MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray Number of I/O: 62 Supplier Device Package: 100-TQFP (14x14) Peripherals: CapSense, DMA, POR, PWM, WDT Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 16x12b; D/A 1x8b Core Processor: 8051 EEPROM Size: 1K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) DigiKey Programmable: Not Verified |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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CY8C3445LTI-078 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48QFNNumber of I/O: 25 Part Status: Active Supplier Device Package: 48-QFN (7x7) DigiKey Programmable: Not Verified Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 16x12b; D/A 2x8b Core Processor: 8051 EEPROM Size: 1K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 32KB (32K x 8) Speed: 50MHz Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD079N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 34µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V |
на замовлення 8062 шт: термін постачання 21-31 дні (днів) |
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IDW30E60AFKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 60A TO247-3Packaging: Bulk Current - Reverse Leakage @ Vr: 40 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO247-3 Current - Average Rectified (Io): 60A Technology: Standard Reverse Recovery Time (trr): 143 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IDW30E65D1 | Infineon Technologies |
Description: DIODE GP 650V 60A TO247-3-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S6J336CHSBSV20000 | Infineon Technologies |
Description: IC MCU 32BIT 112KB FLASH 144LQFPPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 132MHz Program Memory Size: 112KB (112K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: Arm® Cortex®-R5F Data Converters: A/D 40x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Active Number of I/O: 94 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||||
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SAF-XE160FU-8F66RAAFXUMA1 | Infineon Technologies |
Description: 16-BIT FLASH RISC MCU |
на замовлення 4797 шт: термін постачання 21-31 дні (днів) |
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IPF042N10NF2SATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc) Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 93µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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IPF042N10NF2SATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc) Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 93µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
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CYW20820A1KFBG | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 62FBGADigiKey Programmable: Not Verified Part Status: Active Serial Interfaces: ADC, GPIO, I2C, I2S, PCM, SPI, UART RF Family/Standard: Bluetooth GPIO: 22 Supplier Device Package: 62-FBGA (4.5x4.5) Current - Transmitting: 18.58mA ~ 22.48mA Data Rate (Max): 3Mbps Current - Receiving: 6.28mA ~ 6.87mA Protocol: Bluetooth v5.2 + EDR Power - Output: 11.5dBm Voltage - Supply: 1.71V ~ 3.3V Operating Temperature: -30°C ~ 85°C Type: TxRx + MCU Memory Size: 256kB Flash, 176kB RAM, 1MB ROM Sensitivity: -94.5dBm Package / Case: 62-WFBGA Packaging: Tray Frequency: 2.4GHz Mounting Type: Surface Mount |
на замовлення 4377 шт: термін постачання 21-31 дні (днів) |
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D4810N24TVFXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2.4KV 4810ACurrent - Average Rectified (Io): 4810A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: DO-200AE Packaging: Bulk Current - Reverse Leakage @ Vr: 200 mA @ 2400 V Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A Voltage - DC Reverse (Vr) (Max): 2400 V Part Status: Obsolete Operating Temperature - Junction: -40°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFU3607TRL701P | Infineon Technologies |
Description: MOSFET N CH 75V 56A IPAKInput Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: IPAK (TO-251AA) Vgs(th) (Max) @ Id: 4V @ 100µA Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S6E2H14G0AGB30000 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 121FBGAData Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 121-TFBGA Packaging: Tray Number of I/O: 100 Part Status: Active Supplier Device Package: 121-FBGA (6x6) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit DigiKey Programmable: Not Verified |
на замовлення 488 шт: термін постачання 21-31 дні (днів) |
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S6E2H14G0AGB3000A | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 121FBGANumber of I/O: 100 Part Status: Active Supplier Device Package: 121-FBGA (6x6) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 24x12b SAR; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TJ) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 121-TFBGA Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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S6E2H14E0AGV2000M | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 80LQFPNumber of I/O: 63 Part Status: Active Supplier Device Package: 80-LQFP (12x12) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b SAR; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TJ) DigiKey Programmable: Not Verified RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tray |
на замовлення 1190 шт: термін постачання 21-31 дні (днів) |
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S6E2GK6JHAGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 176LQFPDigiKey Programmable: Not Verified Number of I/O: 153 Supplier Device Package: 176-LQFP (24x24) Peripherals: DMA, I2S, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 32x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 128K x 8 Program Memory Size: 512KB (512K x 8) Speed: 180MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2H46E0AGV20000 | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 80LQFPSpeed: 160MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tray Number of I/O: 63 Part Status: Active Supplier Device Package: 80-LQFP (12x12) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 64K x 8 Program Memory Size: 544KB (544K x 8) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1190 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2H44E0AGV20000 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 80LQFPDigiKey Programmable: Not Verified Number of I/O: 63 Part Status: Active Supplier Device Package: 80-LQFP (12x12) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1190 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2GK8H0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 144LQFPNumber of I/O: 121 Part Status: Active Supplier Device Package: 144-LQFP (20x20) Peripherals: DMA, I2S, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 192K x 8 Program Memory Size: 1MB (1M x 8) Speed: 180MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2GM8J0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 176LQFPVoltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 32x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 192K x 8 Program Memory Size: 1MB (1M x 8) Speed: 180MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Packaging: Tray Number of I/O: 153 Part Status: Active Supplier Device Package: 176-LQFP (24x24) Peripherals: DMA, I2S, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2H44E0AGV2000M | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 80LQFPDigiKey Programmable: Not Verified Number of I/O: 63 Part Status: Active Supplier Device Package: 80-LQFP (12x12) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1190 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2H16G0AGV20000 | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 120LQFP |
товару немає в наявності |
Мінімальне замовлення: 840 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2H44G0AGB3000A | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 121FBGACore Size: 32-Bit Single-Core Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 121-TFBGA Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 100 Supplier Device Package: 121-FBGA (6x6) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V |
товару немає в наявності |
Мінімальне замовлення: 4900 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2H16G0AGB3000A | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 121FBGADigiKey Programmable: Not Verified Number of I/O: 100 Part Status: Active Supplier Device Package: 121-FBGA (6x6) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 64K x 8 Program Memory Size: 544KB (544K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 121-TFBGA Packaging: Tray |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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S6E2H44F0AGV20000 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 100LQFPDigiKey Programmable: Not Verified Number of I/O: 80 Supplier Device Package: 100-LQFP (14x14) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2H14F0AGV20000 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 100LQFPNumber of I/O: 80 Part Status: Active Supplier Device Package: 100-LQFP (14x14) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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S6E2GM8H0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 144LQFPDigiKey Programmable: Not Verified Number of I/O: 121 Supplier Device Package: 144-LQFP (20x20) Peripherals: DMA, I2S, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 192K x 8 Program Memory Size: 1MB (1M x 8) Speed: 180MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2H16F0AGV20000 | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 100LQFPNumber of I/O: 80 Part Status: Active Supplier Device Package: 100-LQFP (14x14) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 64K x 8 Program Memory Size: 544KB (544K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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S6E2H14G0AGV20000 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 120LQFPOscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 120-LQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 100 Supplier Device Package: 120-LQFP (16x16) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH |
товару немає в наявності |
Мінімальне замовлення: 840 шт В кошику од. на суму грн. | ||||||||||||||||
|
S6E2GK6J0AGV2000A | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 176LQFPProgram Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 128K x 8 Program Memory Size: 512KB (512K x 8) Speed: 180MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 153 Supplier Device Package: 176-LQFP (24x24) Peripherals: DMA, I2S, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 32x12b Core Processor: ARM® Cortex®-M4F |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||||
|
S6E2H44G0AGV20000 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 120LQFPNumber of I/O: 100 Supplier Device Package: 120-LQFP (16x16) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 32K x 8 Program Memory Size: 288KB (288K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 120-LQFP Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 840 шт В кошику од. на суму грн. |
| CY9AF116MPMC-GNE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80LQFP
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Number of I/O: 66
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Description: IC MCU 32BIT 512KB FLASH 80LQFP
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Number of I/O: 66
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
товару немає в наявності
Мінімальне замовлення: 1190 шт
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| S29GL128S10DHI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Memory Organization: 8M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Memory Organization: 8M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 402.95 грн |
| 10+ | 354.15 грн |
| 25+ | 347.40 грн |
| 40+ | 323.66 грн |
| 80+ | 290.43 грн |
| 260+ | 289.34 грн |
| 520+ | 266.73 грн |
| 1040+ | 255.47 грн |
| BSM10GP60BOSA1 |
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Виробник: Infineon Technologies
Description: BSM10GP60 - IGBT MODULE 600V 20A
Part Status: Active
Packaging: Bulk
Description: BSM10GP60 - IGBT MODULE 600V 20A
Part Status: Active
Packaging: Bulk
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 5036.32 грн |
| CYPD7299-68LDXST |
Виробник: Infineon Technologies
Description: CCG7D
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Description: CCG7D
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| IKQ120N120CS7XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 216A TO247
Switching Energy: 10.3mJ (on), 5.72mJ (off)
Td (on/off) @ 25°C: 44ns/205ns
Power - Max: 1004 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 216 A
Gate Charge: 710 nC
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-46
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Reverse Recovery Time (trr): 205 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Part Status: Active
Packaging: Tube
Description: IGBT TRENCH FS 1200V 216A TO247
Switching Energy: 10.3mJ (on), 5.72mJ (off)
Td (on/off) @ 25°C: 44ns/205ns
Power - Max: 1004 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 216 A
Gate Charge: 710 nC
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-46
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Reverse Recovery Time (trr): 205 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Part Status: Active
Packaging: Tube
на замовлення 278 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 932.21 грн |
| 30+ | 546.55 грн |
| 120+ | 469.56 грн |
| IGQ120N120S7XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/215ns
Switching Energy: 10.3mJ (on), 5.72mJ (off)
Test Condition: 600V, 120A, 1.3Ohm, 15V
Gate Charge: 710 nC
Current - Collector (Ic) (Max): 216 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 1000 W
Description: IGBT
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/215ns
Switching Energy: 10.3mJ (on), 5.72mJ (off)
Test Condition: 600V, 120A, 1.3Ohm, 15V
Gate Charge: 710 nC
Current - Collector (Ic) (Max): 216 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 1000 W
на замовлення 181 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 811.33 грн |
| 30+ | 466.28 грн |
| 120+ | 397.33 грн |
| BTS70082EPZXUMA1 |
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Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3144 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.83 грн |
| 10+ | 118.50 грн |
| 25+ | 108.20 грн |
| 100+ | 90.92 грн |
| 250+ | 85.85 грн |
| 500+ | 83.51 грн |
| BSZ0804LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/40A TSDSON
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Description: MOSFET N-CH 100V 11A/40A TSDSON
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
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| BSZ0804LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 11A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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| ISZ0804NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
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Мінімальне замовлення: 5000 шт
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| ISZ0804NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
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| BSZ088N03MSG |
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Виробник: Infineon Technologies
Description: BSZ088N03 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: BSZ088N03 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
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| BSZ0803LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| BSZ0803LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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| S6SBP202A1FVA1001 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR S6BP202A
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Up or Down
Supplied Contents: Board(s)
Utilized IC / Part: S6BP202A
Board Type: Fully Populated
Regulator Topology: Buck-Boost
Current - Output: 2.4A
Voltage - Input: 2.5V ~ 42V
Voltage - Output: 5V
Packaging: Box
Contents: Board(s)
Description: EVAL BOARD FOR S6BP202A
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Up or Down
Supplied Contents: Board(s)
Utilized IC / Part: S6BP202A
Board Type: Fully Populated
Regulator Topology: Buck-Boost
Current - Output: 2.4A
Voltage - Input: 2.5V ~ 42V
Voltage - Output: 5V
Packaging: Box
Contents: Board(s)
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| IRFSL3206PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
Description: MOSFET N-CH 60V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.32 грн |
| 50+ | 118.01 грн |
| 100+ | 106.70 грн |
| 500+ | 81.52 грн |
| IMBG65R048M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1000 шт
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| IMBG65R048M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 690.44 грн |
| 10+ | 455.93 грн |
| 100+ | 344.01 грн |
| IMBG65R057M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1000 шт
В кошику
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| IMBG65R057M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 991 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 639.30 грн |
| 10+ | 420.64 грн |
| 100+ | 311.03 грн |
| IMBG65R083M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1000 шт
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| IMBG65R083M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: SILICON CARBIDE MOSFET PG-TO263-
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
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| IMBG65R107M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1000 шт
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| IMBG65R107M1HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 784 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 500.59 грн |
| 10+ | 325.12 грн |
| 100+ | 236.31 грн |
| 500+ | 211.10 грн |
| TZ740N22KS01HPSA3 |
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Виробник: Infineon Technologies
Description: MOODULE
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 819 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Voltage - Off State: 2.2 kV
Description: MOODULE
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 819 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Voltage - Off State: 2.2 kV
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| TLE9261BQXXUMA2 |
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Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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Мінімальне замовлення: 2500 шт
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| CY8C4013LQI-411T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 46.01 грн |
| CY8C4013LQI-411T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 7158 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.84 грн |
| 10+ | 72.83 грн |
| 25+ | 66.11 грн |
| 100+ | 55.13 грн |
| 250+ | 51.84 грн |
| 500+ | 49.84 грн |
| 1000+ | 47.41 грн |
| CY8C3244LTI-130 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 68QFN
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 512 x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 68QFN
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 512 x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 2519 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 712.92 грн |
| 10+ | 533.17 грн |
| 25+ | 494.85 грн |
| 100+ | 424.91 грн |
| 260+ | 405.37 грн |
| 520+ | 394.15 грн |
| 1040+ | 378.61 грн |
| CY8C3245AXI-158 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 100TQFP
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 766.38 грн |
| 10+ | 574.73 грн |
| 90+ | 491.88 грн |
| 180+ | 445.50 грн |
| 270+ | 437.43 грн |
| CY8C3445LTI-078 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48QFN
Number of I/O: 25
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 8BIT 32KB FLASH 48QFN
Number of I/O: 25
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
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| IPD079N06L3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
на замовлення 8062 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.13 грн |
| 10+ | 88.65 грн |
| 100+ | 59.85 грн |
| 500+ | 44.59 грн |
| 1000+ | 40.86 грн |
| IDW30E60AFKSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
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| IDW30E65D1 |
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Виробник: Infineon Technologies
Description: DIODE GP 650V 60A TO247-3-1
Description: DIODE GP 650V 60A TO247-3-1
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| S6J336CHSBSV20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 112KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 94
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 112KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 94
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 600 шт
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| SAF-XE160FU-8F66RAAFXUMA1 |
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Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Description: 16-BIT FLASH RISC MCU
на замовлення 4797 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 130+ | 168.67 грн |
| IPF042N10NF2SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
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Мінімальне замовлення: 800 шт
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| IPF042N10NF2SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.58 грн |
| 10+ | 107.23 грн |
| 100+ | 73.17 грн |
| CYW20820A1KFBG |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 62FBGA
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: ADC, GPIO, I2C, I2S, PCM, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 22
Supplier Device Package: 62-FBGA (4.5x4.5)
Current - Transmitting: 18.58mA ~ 22.48mA
Data Rate (Max): 3Mbps
Current - Receiving: 6.28mA ~ 6.87mA
Protocol: Bluetooth v5.2 + EDR
Power - Output: 11.5dBm
Voltage - Supply: 1.71V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Memory Size: 256kB Flash, 176kB RAM, 1MB ROM
Sensitivity: -94.5dBm
Package / Case: 62-WFBGA
Packaging: Tray
Frequency: 2.4GHz
Mounting Type: Surface Mount
Description: IC RF TXRX+MCU BLE 62FBGA
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: ADC, GPIO, I2C, I2S, PCM, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 22
Supplier Device Package: 62-FBGA (4.5x4.5)
Current - Transmitting: 18.58mA ~ 22.48mA
Data Rate (Max): 3Mbps
Current - Receiving: 6.28mA ~ 6.87mA
Protocol: Bluetooth v5.2 + EDR
Power - Output: 11.5dBm
Voltage - Supply: 1.71V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Memory Size: 256kB Flash, 176kB RAM, 1MB ROM
Sensitivity: -94.5dBm
Package / Case: 62-WFBGA
Packaging: Tray
Frequency: 2.4GHz
Mounting Type: Surface Mount
на замовлення 4377 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 402.95 грн |
| 10+ | 299.60 грн |
| 25+ | 272.75 грн |
| 80+ | 229.29 грн |
| 230+ | 209.55 грн |
| 490+ | 197.65 грн |
| 980+ | 191.64 грн |
| D4810N24TVFXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 4810A
Current - Average Rectified (Io): 4810A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
Voltage - DC Reverse (Vr) (Max): 2400 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Description: DIODE GEN PURP 2.4KV 4810A
Current - Average Rectified (Io): 4810A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
Voltage - DC Reverse (Vr) (Max): 2400 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
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| IRFU3607TRL701P |
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Виробник: Infineon Technologies
Description: MOSFET N CH 75V 56A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tape & Reel (TR)
Description: MOSFET N CH 75V 56A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tape & Reel (TR)
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| S6E2H14G0AGB30000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
DigiKey Programmable: Not Verified
на замовлення 488 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 620.70 грн |
| 10+ | 464.96 грн |
| 25+ | 431.85 грн |
| 100+ | 371.13 грн |
| 250+ | 354.86 грн |
| S6E2H14G0AGB3000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TJ)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TJ)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 914.39 грн |
| 10+ | 697.48 грн |
| 25+ | 651.92 грн |
| 100+ | 564.75 грн |
| 490+ | 561.76 грн |
| S6E2H14E0AGV2000M |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TJ)
DigiKey Programmable: Not Verified
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TJ)
DigiKey Programmable: Not Verified
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 654.02 грн |
| 10+ | 489.36 грн |
| 25+ | 454.23 грн |
| 119+ | 386.40 грн |
| 238+ | 373.57 грн |
| 476+ | 363.01 грн |
| 952+ | 348.51 грн |
| S6E2GK6JHAGV2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 153
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Description: IC MCU 32BIT 512KB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 153
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| S6E2H46E0AGV20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 80LQFP
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 544KB FLASH 80LQFP
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1190 шт
В кошику
од. на суму грн.
| S6E2H44E0AGV20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1190 шт
В кошику
од. на суму грн.
| S6E2GK8H0AGV2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Number of I/O: 121
Part Status: Active
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Number of I/O: 121
Part Status: Active
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| S6E2GM8J0AGV2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Number of I/O: 153
Part Status: Active
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Number of I/O: 153
Part Status: Active
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| S6E2H44E0AGV2000M |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1190 шт
В кошику
од. на суму грн.
| S6E2H16G0AGV20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Description: IC MCU 32BIT 544KB FLASH 120LQFP
товару немає в наявності
Мінімальне замовлення: 840 шт
В кошику
од. на суму грн.
| S6E2H44G0AGB3000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Description: IC MCU 32BIT 288KB FLASH 121FBGA
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
товару немає в наявності
Мінімальне замовлення: 4900 шт
В кошику
од. на суму грн.
| S6E2H16G0AGB3000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 121FBGA
DigiKey Programmable: Not Verified
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
Description: IC MCU 32BIT 544KB FLASH 121FBGA
DigiKey Programmable: Not Verified
Number of I/O: 100
Part Status: Active
Supplier Device Package: 121-FBGA (6x6)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 121-TFBGA
Packaging: Tray
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 702.07 грн |
| 10+ | 528.76 грн |
| 25+ | 491.84 грн |
| 100+ | 423.46 грн |
| 490+ | 394.65 грн |
| 980+ | 385.59 грн |
| 1470+ | 374.81 грн |
| S6E2H44F0AGV20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC MCU 32BIT 288KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| S6E2H14F0AGV20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Number of I/O: 80
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Number of I/O: 80
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 514.54 грн |
| 10+ | 385.49 грн |
| 90+ | 329.50 грн |
| 180+ | 298.64 грн |
| S6E2GM8H0AGV2000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 121
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Description: IC MCU 32BIT 1MB FLASH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 121
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| S6E2H16F0AGV20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100LQFP
Number of I/O: 80
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 544KB FLASH 100LQFP
Number of I/O: 80
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 735.39 грн |
| 10+ | 552.94 грн |
| 90+ | 474.21 грн |
| 180+ | 429.73 грн |
| 270+ | 422.06 грн |
| 540+ | 410.82 грн |
| S6E2H14G0AGV20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 120LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Description: IC MCU 32BIT 288KB FLASH 120LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
товару немає в наявності
Мінімальне замовлення: 840 шт
В кошику
од. на суму грн.
| S6E2GK6J0AGV2000A |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 176LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 153
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
Description: IC MCU 32BIT 512KB FLASH 176LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 180MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 153
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SmartCard, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b
Core Processor: ARM® Cortex®-M4F
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| S6E2H44G0AGV20000 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 120LQFP
Number of I/O: 100
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 120LQFP
Number of I/O: 100
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 840 шт
В кошику
од. на суму грн.




































