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CYW55573MIWBGT Infineon Technologies Description: RF TXRX MODULE BLUETOOTH WIFI
Packaging: Tape & Reel (TR)
Frequency: 2.4GHz, 5GHz, 6GHz
Operating Temperature: -40°C ~ 85°C
Data Rate: 1.2Gbps
Protocol: Bluetooth v5.2
Antenna Type: Antenna Not Included
Utilized IC / Part: CYW55573
Modulation: 1024-QAM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, PCM, UART
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CYW55573MIFFBG CYW55573MIFFBG Infineon Technologies Infineon-AIROC_CYW5557x_Tri-Band_Wi-Fi_6_6E_Bluetooth_5-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01894bb9b24a3194 Description: RF TXRX MODULE WIFI
Packaging: Tray
на замовлення 1176 шт:
термін постачання 21-31 дні (днів)
1+1587.38 грн
10+1197.12 грн
25+1099.89 грн
80+937.53 грн
230+868.63 грн
440+833.04 грн
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CYBLE-014008-EVAL CYBLE-014008-EVAL Infineon Technologies Infineon-CYBLE-014008-00_EZ-BLE_Creator_Module-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed3c9c3519e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: DEVELOPMENT KIT CYBLE-014008
Packaging: Bulk
For Use With/Related Products: EZ-BLE™ PSoC®
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+1642.73 грн
В кошику  од. на суму  грн.
IRF9Z34NSTRRPBF IRF9Z34NSTRRPBF Infineon Technologies irf9z34nspbf.pdf?fileId=5546d462533600a40153561228de1de0 Description: MOSFET P-CH 55V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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CY8C4146LQS-S433T CY8C4146LQS-S433T Infineon Technologies Infineon-CY8C41xx_Automotive_PSoC_4_PSoC_4100S_family_based_on_Arm_Cortex_-M0_CPU-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee64c786e7a Description: IC MCU 32BIT 64KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+256.33 грн
Мінімальне замовлення: 2500
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CY8C4146LQS-S433T CY8C4146LQS-S433T Infineon Technologies Infineon-CY8C41xx_Automotive_PSoC_4_PSoC_4100S_family_based_on_Arm_Cortex_-M0_CPU-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee64c786e7a Description: IC MCU 32BIT 64KB FLASH 40UFQFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1+485.41 грн
10+359.84 грн
25+332.85 грн
100+284.53 грн
250+271.25 грн
500+263.25 грн
1000+252.46 грн
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CY8C4125PVS-S432 CY8C4125PVS-S432 Infineon Technologies Infineon-CY8C41xx_Automotive_PSoC_4_PSoC_4100S_family_based_on_Arm_Cortex_-M0_CPU-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee64c786e7a Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
Qualification: AEC-Q100
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)
1+422.39 грн
10+311.54 грн
47+274.44 грн
141+240.58 грн
282+232.28 грн
517+226.24 грн
1034+216.86 грн
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S6E2H14E0AGV20000 S6E2H14E0AGV20000 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
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S6E2H16E0AGV2000M Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
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S6E2H46E0AGV2000M Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
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S6E2H44F0AGV2000M S6E2H44F0AGV2000M Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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BCR116E6433HTMA1 BCR116E6433HTMA1 Infineon Technologies bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR116SH6327XTSA1 BCR116SH6327XTSA1 Infineon Technologies bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
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BCR116WH6327XTSA1 BCR116WH6327XTSA1 Infineon Technologies bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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CYAT82687-100AA39 Infineon Technologies Infineon-CYAT82687-100AA31-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ec888f20b7f Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
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BCR523E6433HTMA1 BCR523E6433HTMA1 Infineon Technologies bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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BCR553E6327HTSA1 BCR553E6327HTSA1 Infineon Technologies bcr553.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a37301144080e0fd030b Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
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BCR573E6327HTSA1 BCR573E6327HTSA1 Infineon Technologies bcr573.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a373011440841409030e Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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BCR573E6327HTSA1 BCR573E6327HTSA1 Infineon Technologies bcr573.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a373011440841409030e Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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BCR583E6327HTSA1 BCR583E6327HTSA1 Infineon Technologies bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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BCR583E6327HTSA1 BCR583E6327HTSA1 Infineon Technologies bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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BCR523UE6433HTMA1 BCR523UE6433HTMA1 Infineon Technologies bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Description: TRANS 2NPN PREBIAS 0.33W SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SC74-6
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IPT017N12NM6ATMA1 IPT017N12NM6ATMA1 Infineon Technologies Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+174.97 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT017N12NM6ATMA1 IPT017N12NM6ATMA1 Infineon Technologies Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 3344 шт:
термін постачання 21-31 дні (днів)
1+447.09 грн
10+288.58 грн
100+208.11 грн
500+193.54 грн
В кошику  од. на суму  грн.
IPTC017N12NM6ATMA1 IPTC017N12NM6ATMA1 Infineon Technologies Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
товару немає в наявності
В кошику  од. на суму  грн.
IPTC017N12NM6ATMA1 IPTC017N12NM6ATMA1 Infineon Technologies Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 1654 шт:
термін постачання 21-31 дні (днів)
1+591.01 грн
10+386.82 грн
100+298.69 грн
В кошику  од. на суму  грн.
IR4311MTRPBF IR4311MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 35W PQFN22
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
товару немає в наявності
В кошику  од. на суму  грн.
IR4311MTRPBF IR4311MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 35W PQFN22
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
2+297.21 грн
10+216.00 грн
25+198.29 грн
100+167.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1399BN-12VXIT CY7C1399BN-12VXIT Infineon Technologies Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399BN-12VXIT CY7C1399BN-12VXIT Infineon Technologies Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Cut Tape (CT)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 811 шт:
термін постачання 21-31 дні (днів)
2+221.42 грн
10+199.44 грн
25+193.60 грн
50+177.53 грн
100+173.37 грн
250+167.88 грн
500+161.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1399B-12VC CY7C1399B-12VC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-12ZC CY7C1399B-12ZC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 3219 шт:
термін постачання 21-31 дні (днів)
333+71.76 грн
Мінімальне замовлення: 333
В кошику  од. на суму  грн.
CY7C1399B-12ZC CY7C1399B-12ZC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-15ZC CY7C1399B-15ZC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-12VXC CY7C1399B-12VXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-15VXC CY7C1399B-15VXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-12ZXC CY7C1399B-12ZXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-15ZXC CY7C1399B-15ZXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
226+113.26 грн
Мінімальне замовлення: 226
В кошику  од. на суму  грн.
CY7C1399B-15ZXC CY7C1399B-15ZXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IDW30G120C5BFKSA1 IDW30G120C5BFKSA1 Infineon Technologies Infineon-20140610_IDW30G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146956f595b6a6b Description: DIODE ARR SIC 1200V 44A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 44A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
1+918.02 грн
30+504.66 грн
120+455.85 грн
В кошику  од. на суму  грн.
KPY57-RK Infineon Technologies INFNS03494-1.pdf?t.download=true&u=5oefqw Description: SENSOR 870.2PSI 0.2" .2V TO8-5
Packaging: Bulk
Package / Case: TO-8 Style, 8 Leads
Output Type: Wheatstone Bridge
Mounting Type: Through Hole
Output: 0 mV ~ 200 mV
Operating Pressure: 870.2PSI (6000kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: PC Pins
Voltage - Supply: 12V
Port Size: Male - 0.2" (5.1mm) Tube
Applications: Board Mount
Supplier Device Package: TO-8-5
Port Style: Barbless
Maximum Pressure: 1450.38PSI (10000kPa)
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
10+2663.80 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IGO60R070D1AUMA2 IGO60R070D1AUMA2 Infineon Technologies Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514 Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGO60R070D1AUMA2 IGO60R070D1AUMA2 Infineon Technologies Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514 Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
1+1084.94 грн
10+733.05 грн
100+557.08 грн
В кошику  од. на суму  грн.
CYW55572MIFFBG Infineon Technologies Description: RF TXRX MODULE WIFI
Packaging: Tray
товару немає в наявності
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IRSM836-084MATR IRSM836-084MATR Infineon Technologies irsm836-084ma.pdf?fileId=5546d462533600a40153567f2ba0289c Description: IC HALF BRIDGE DRIVER 7A 36QFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+315.70 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRSM836-084MATR IRSM836-084MATR Infineon Technologies irsm836-084ma.pdf?fileId=5546d462533600a40153567f2ba0289c Description: IC HALF BRIDGE DRIVER 7A 36QFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
1+591.86 грн
10+440.13 грн
25+407.54 грн
100+348.91 грн
250+332.91 грн
500+323.26 грн
1000+310.16 грн
В кошику  од. на суму  грн.
SIGC12T60SNCX1SA3 Infineon Technologies SIGC12T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
товару немає в наявності
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SIGC12T60SNCX7SA2 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
товару немає в наявності
В кошику  од. на суму  грн.
SIGC12T60NCX7SA2 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
товару немає в наявності
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SIGC12T60NCX1SA5 SIGC12T60NCX1SA5 Infineon Technologies SIGC12T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA4 Infineon Technologies SIGC12T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA3 Infineon Technologies SIGC12T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
товару немає в наявності
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SIGC12T60SNCX1SA2 Infineon Technologies SIGC12T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX1SA4 Infineon Technologies SIGC12T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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XC836MT2FRAABKXUMA1 XC836MT2FRAABKXUMA1 Infineon Technologies Infineon-XC835_XC836-DS-v01_04-cn.pdf?fileId=db3a30432ba3fa6f012baa1500492fd3 Description: IC MCU 8BIT 8KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Number of I/O: 23
DigiKey Programmable: Not Verified
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CY8CKIT-009A CY8CKIT-009A Infineon Technologies CY8C38_PSoC-3_RevQ.pdf Description: CY8C38/CY8CKIT-001(A) EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: 8051
Utilized IC / Part: CY8C38, CY8CKIT-001(A)
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
1+477.75 грн
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F3L8MR12W2M1HB11BPSA1 F3L8MR12W2M1HB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+18472.03 грн
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CY8C5688AXI-LP099 CY8C5688AXI-LP099 Infineon Technologies download Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 752 шт:
термін постачання 21-31 дні (днів)
1+1836.90 грн
10+1428.54 грн
90+1350.22 грн
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CYAT81658-100AS48T CYAT81658-100AS48T Infineon Technologies PdfFile984121.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+628.02 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
CYW55573MIWBGT
Виробник: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH WIFI
Packaging: Tape & Reel (TR)
Frequency: 2.4GHz, 5GHz, 6GHz
Operating Temperature: -40°C ~ 85°C
Data Rate: 1.2Gbps
Protocol: Bluetooth v5.2
Antenna Type: Antenna Not Included
Utilized IC / Part: CYW55573
Modulation: 1024-QAM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, PCM, UART
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CYW55573MIFFBG Infineon-AIROC_CYW5557x_Tri-Band_Wi-Fi_6_6E_Bluetooth_5-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01894bb9b24a3194
CYW55573MIFFBG
Виробник: Infineon Technologies
Description: RF TXRX MODULE WIFI
Packaging: Tray
на замовлення 1176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1587.38 грн
10+1197.12 грн
25+1099.89 грн
80+937.53 грн
230+868.63 грн
440+833.04 грн
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CYBLE-014008-EVAL Infineon-CYBLE-014008-00_EZ-BLE_Creator_Module-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed3c9c3519e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-014008-EVAL
Виробник: Infineon Technologies
Description: DEVELOPMENT KIT CYBLE-014008
Packaging: Bulk
For Use With/Related Products: EZ-BLE™ PSoC®
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1642.73 грн
В кошику  од. на суму  грн.
IRF9Z34NSTRRPBF irf9z34nspbf.pdf?fileId=5546d462533600a40153561228de1de0
IRF9Z34NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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CY8C4146LQS-S433T Infineon-CY8C41xx_Automotive_PSoC_4_PSoC_4100S_family_based_on_Arm_Cortex_-M0_CPU-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee64c786e7a
CY8C4146LQS-S433T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+256.33 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CY8C4146LQS-S433T Infineon-CY8C41xx_Automotive_PSoC_4_PSoC_4100S_family_based_on_Arm_Cortex_-M0_CPU-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee64c786e7a
CY8C4146LQS-S433T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40UFQFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+485.41 грн
10+359.84 грн
25+332.85 грн
100+284.53 грн
250+271.25 грн
500+263.25 грн
1000+252.46 грн
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CY8C4125PVS-S432 Infineon-CY8C41xx_Automotive_PSoC_4_PSoC_4100S_family_based_on_Arm_Cortex_-M0_CPU-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee64c786e7a
CY8C4125PVS-S432
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
Qualification: AEC-Q100
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+422.39 грн
10+311.54 грн
47+274.44 грн
141+240.58 грн
282+232.28 грн
517+226.24 грн
1034+216.86 грн
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S6E2H14E0AGV20000 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S6E2H14E0AGV20000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
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S6E2H16E0AGV2000M Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
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S6E2H46E0AGV2000M Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
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S6E2H44F0AGV2000M Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
S6E2H44F0AGV2000M
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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BCR116E6433HTMA1 bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285
BCR116E6433HTMA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR116SH6327XTSA1 bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285
BCR116SH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
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BCR116WH6327XTSA1 bcr116series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f60ae880285
BCR116WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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CYAT82687-100AA39 Infineon-CYAT82687-100AA31-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ec888f20b7f
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
товару немає в наявності
В кошику  од. на суму  грн.
BCR523E6433HTMA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
BCR523E6433HTMA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
BCR553E6327HTSA1 bcr553.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a37301144080e0fd030b
BCR553E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
BCR573E6327HTSA1 bcr573.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a373011440841409030e
BCR573E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
BCR573E6327HTSA1 bcr573.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a373011440841409030e
BCR573E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
BCR583E6327HTSA1 bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f
BCR583E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
BCR583E6327HTSA1 bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f
BCR583E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
BCR523UE6433HTMA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
BCR523UE6433HTMA1
Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.33W SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SC74-6
товару немає в наявності
В кошику  од. на суму  грн.
IPT017N12NM6ATMA1 Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c
IPT017N12NM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+174.97 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IPT017N12NM6ATMA1 Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c
IPT017N12NM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 3344 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+447.09 грн
10+288.58 грн
100+208.11 грн
500+193.54 грн
В кошику  од. на суму  грн.
IPTC017N12NM6ATMA1 Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e
IPTC017N12NM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
товару немає в наявності
В кошику  од. на суму  грн.
IPTC017N12NM6ATMA1 Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e
IPTC017N12NM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 1654 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+591.01 грн
10+386.82 грн
100+298.69 грн
В кошику  од. на суму  грн.
IR4311MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4311MTRPBF
Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 35W PQFN22
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
товару немає в наявності
В кошику  од. на суму  грн.
IR4311MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4311MTRPBF
Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 35W PQFN22
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+297.21 грн
10+216.00 грн
25+198.29 грн
100+167.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1399BN-12VXIT Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1399BN-12VXIT
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399BN-12VXIT Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1399BN-12VXIT
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Cut Tape (CT)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 811 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+221.42 грн
10+199.44 грн
25+193.60 грн
50+177.53 грн
100+173.37 грн
250+167.88 грн
500+161.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1399B-12VC CY7C1399B%20RevD.pdf
CY7C1399B-12VC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-12ZC CY7C1399B%20RevD.pdf
CY7C1399B-12ZC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 3219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
333+71.76 грн
Мінімальне замовлення: 333
В кошику  од. на суму  грн.
CY7C1399B-12ZC CY7C1399B%20RevD.pdf
CY7C1399B-12ZC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-15ZC CY7C1399B%20RevD.pdf
CY7C1399B-15ZC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-12VXC CY7C1399B%20RevD.pdf
CY7C1399B-12VXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-15VXC CY7C1399B%20RevD.pdf
CY7C1399B-15VXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-12ZXC CY7C1399B%20RevD.pdf
CY7C1399B-12ZXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1399B-15ZXC CY7C1399B%20RevD.pdf
CY7C1399B-15ZXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
226+113.26 грн
Мінімальне замовлення: 226
В кошику  од. на суму  грн.
CY7C1399B-15ZXC CY7C1399B%20RevD.pdf
CY7C1399B-15ZXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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IDW30G120C5BFKSA1 Infineon-20140610_IDW30G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146956f595b6a6b
IDW30G120C5BFKSA1
Виробник: Infineon Technologies
Description: DIODE ARR SIC 1200V 44A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 44A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+918.02 грн
30+504.66 грн
120+455.85 грн
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KPY57-RK INFNS03494-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: SENSOR 870.2PSI 0.2" .2V TO8-5
Packaging: Bulk
Package / Case: TO-8 Style, 8 Leads
Output Type: Wheatstone Bridge
Mounting Type: Through Hole
Output: 0 mV ~ 200 mV
Operating Pressure: 870.2PSI (6000kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: PC Pins
Voltage - Supply: 12V
Port Size: Male - 0.2" (5.1mm) Tube
Applications: Board Mount
Supplier Device Package: TO-8-5
Port Style: Barbless
Maximum Pressure: 1450.38PSI (10000kPa)
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+2663.80 грн
Мінімальне замовлення: 10
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IGO60R070D1AUMA2 Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514
IGO60R070D1AUMA2
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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IGO60R070D1AUMA2 Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514
IGO60R070D1AUMA2
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1084.94 грн
10+733.05 грн
100+557.08 грн
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CYW55572MIFFBG
Виробник: Infineon Technologies
Description: RF TXRX MODULE WIFI
Packaging: Tray
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IRSM836-084MATR irsm836-084ma.pdf?fileId=5546d462533600a40153567f2ba0289c
IRSM836-084MATR
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 7A 36QFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+315.70 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRSM836-084MATR irsm836-084ma.pdf?fileId=5546d462533600a40153567f2ba0289c
IRSM836-084MATR
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 7A 36QFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+591.86 грн
10+440.13 грн
25+407.54 грн
100+348.91 грн
250+332.91 грн
500+323.26 грн
1000+310.16 грн
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SIGC12T60SNCX1SA3 SIGC12T60SNC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX7SA2
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX7SA2
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA5 SIGC12T60NC_ed2_11-28-03.pdf
SIGC12T60NCX1SA5
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA4 SIGC12T60NC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA3 SIGC12T60NC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX1SA2 SIGC12T60SNC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX1SA4 SIGC12T60SNC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
товару немає в наявності
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XC836MT2FRAABKXUMA1 Infineon-XC835_XC836-DS-v01_04-cn.pdf?fileId=db3a30432ba3fa6f012baa1500492fd3
XC836MT2FRAABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Number of I/O: 23
DigiKey Programmable: Not Verified
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CY8CKIT-009A CY8C38_PSoC-3_RevQ.pdf
CY8CKIT-009A
Виробник: Infineon Technologies
Description: CY8C38/CY8CKIT-001(A) EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: 8051
Utilized IC / Part: CY8C38, CY8CKIT-001(A)
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+477.75 грн
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F3L8MR12W2M1HB11BPSA1
F3L8MR12W2M1HB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18472.03 грн
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CY8C5688AXI-LP099 download
CY8C5688AXI-LP099
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 752 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1836.90 грн
10+1428.54 грн
90+1350.22 грн
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CYAT81658-100AS48T PdfFile984121.pdf
CYAT81658-100AS48T
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+628.02 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
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