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CY2DM1502ZXIT CY2DM1502ZXIT Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:2 1.5GHZ 8TSSOP
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CY2DP1502SXIT CY2DP1502SXIT Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:2 1.5GHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-SOIC
Frequency - Max: 1.5 GHz
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CY14V104LA-BA45XI CY14V104LA-BA45XI Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY14V104LA-BA25XI CY14V104LA-BA25XI Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY8C5466LTI-063T CY8C5466LTI-063T Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C5567LTI-079T CY8C5567LTI-079T Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY7C1480BV25-167BZXC CY7C1480BV25-167BZXC Infineon Technologies Infineon-CY7C1480BV25_72-Mbit_%282_M_36%29_Pipelined_Sync_SRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4514c39be Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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IR3473MTR1PBF IR3473MTR1PBF Infineon Technologies ir3473m.pdf?fileId=5546d462533600a4015355cca86d1727 Description: IC REG BUCK ADJUSTABLE 6A 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 27V
Topology: Buck
Supplier Device Package: 16-QFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
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IR3551MTRPBF IR3551MTRPBF Infineon Technologies ir3551.pdf?fileId=5546d462533600a4015355cd84a11763 Description: IC REG BUCK SYNC ADJ 50A 28PQFN
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IRF2907ZSTRLPBF IRF2907ZSTRLPBF Infineon Technologies irf2907zpbf.pdf?fileId=5546d462533600a4015355ded98f1902 Description: MOSFET N-CH 75V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
на замовлення 9066 шт:
термін постачання 21-31 дні (днів)
2+324.76 грн
10+218.12 грн
100+155.18 грн
Мінімальне замовлення: 2
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IRF6728MTR1PBF IRF6728MTR1PBF Infineon Technologies irf6728mpbf.pdf?fileId=5546d462533600a4015355ed73701a9c Description: MOSFET N-CH 30V 23A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V
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IRF6892STR1PBF Infineon Technologies irf6892spbf.pdf?fileId=5546d462533600a4015355f0bb961ab8 Description: MOSFET N-CH 25V 28A S3
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IRF7526D1TRPBF IRF7526D1TRPBF Infineon Technologies IRF7526D1PBF.pdf Description: MOSFET P-CH 30V 2A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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IRFH7446TRPBF IRFH7446TRPBF Infineon Technologies irfh7446pbf.pdf?fileId=5546d462533600a40153561f17701eef Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 25 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
5+77.28 грн
10+60.57 грн
100+47.09 грн
500+37.46 грн
1000+37.05 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFH8311TRPBF IRFH8311TRPBF Infineon Technologies irfh8311pbf.pdf?fileId=5546d462533600a40153561f94c91f12 Description: MOSFET N CH 30V 32A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 10 V
на замовлення 42709 шт:
термін постачання 21-31 дні (днів)
3+116.75 грн
10+70.86 грн
100+47.22 грн
500+34.77 грн
1000+31.70 грн
2000+29.12 грн
Мінімальне замовлення: 3
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IRFH9310TRPBF IRFH9310TRPBF Infineon Technologies irfh9310pbf.pdf?fileId=5546d462533600a40153561fe1ae1f27 Description: MOSFET P-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V
на замовлення 2525 шт:
термін постачання 21-31 дні (днів)
3+123.32 грн
10+82.66 грн
100+57.82 грн
500+43.03 грн
1000+40.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR120ZTRPBF IRFR120ZTRPBF Infineon Technologies irfr120zpbf.pdf?fileId=5546d462533600a40153562d2f422050 Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
на замовлення 30512 шт:
термін постачання 21-31 дні (днів)
6+60.84 грн
10+36.50 грн
100+23.72 грн
500+17.08 грн
1000+15.41 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRLMS2002GTRPBF IRLMS2002GTRPBF Infineon Technologies irlms2002pbf.pdf?fileId=5546d462533600a4015356690f42264a Description: MOSFET N-CH 20V 6.5A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(SOT23-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
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TLE72762DATMA1 TLE72762DATMA1 Infineon Technologies Infineon-TLE7276-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e96aef3f08 Description: IC REG LIN 5V 300MA TO252-5-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1 Infineon Technologies ESD101_B1_02series_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002 Description: TVS DIODE 5.5VWM 30VC PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Active
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
15000+4.07 грн
30000+3.70 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD102U102ELSE6327XTSA1 ESD102U102ELSE6327XTSA1 Infineon Technologies ESD102-U1-02ELS_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d3a9e3c1b38ec Description: TVS DIODE 3.3VWM 11VC PGTSSLP23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
15000+5.37 грн
30000+5.15 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD103B102ELSE6327XTSA1 ESD103B102ELSE6327XTSA1 Infineon Technologies ESD103-B1-02series_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433ee50ba8013eea95d0b1150b Description: TVS DIODE 15VWM 48V PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)
15000+4.10 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD112B102ELSE6327XTSA1 ESD112B102ELSE6327XTSA1 Infineon Technologies ESD112-B1-02.pdf Description: TVS DIODE 5.3VWM 21VC TSSLP-2-4
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
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ESD200B1CSP0201XTSA1 ESD200B1CSP0201XTSA1 Infineon Technologies Infineon-ESD200-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d462503812bb0150854d43ae4c9a Description: TVS DIODE 5.5VWM 13VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
15000+0.96 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD205B102ELSE6327XTSA1 ESD205B102ELSE6327XTSA1 Infineon Technologies ESD205-B1.pdf Description: TVS DIODE 5.5VWM 9VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ESD5V5S1B02LRHE6327XTSA1 ESD5V5S1B02LRHE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TVS DIODE 5.5VWM 9.2VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Power - Peak Pulse: 150W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD102U2099ELE6327XTSA1 ESD102U2099ELE6327XTSA1 Infineon Technologies ESD102-U2-099EL.pdf Description: TVS DIODE 3.3VWM 11VC
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD201B203LRHE6327XTSA1 ESD201B203LRHE6327XTSA1 Infineon Technologies ESD201-B2-03LRH.pdf Description: TVS DIODE 5.5VWM 12.1V PGTSLP3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ)
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ESD102U405LE6327XTSA1 ESD102U405LE6327XTSA1 Infineon Technologies ESD102-U4-05L.pdf Description: TVS DIODE 3.3VWM TSLP-5-2
товару немає в наявності
В кошику  од. на суму  грн.
BGF120AE6327XTSA1 BGF120AE6327XTSA1 Infineon Technologies BGF120A.pdf Description: TVS DIODE 5.3VWM 31VC
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 31V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
TLE72762DATMA1 TLE72762DATMA1 Infineon Technologies Infineon-TLE7276-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e96aef3f08 Description: IC REG LIN 5V 300MA TO252-5-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1 Infineon Technologies ESD101_B1_02series_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002 Description: TVS DIODE 5.5VWM 30VC PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Active
на замовлення 73125 шт:
термін постачання 21-31 дні (днів)
31+10.69 грн
49+6.57 грн
100+4.89 грн
500+4.40 грн
1000+4.25 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
ESD102U102ELSE6327XTSA1 ESD102U102ELSE6327XTSA1 Infineon Technologies ESD102-U1-02ELS_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d3a9e3c1b38ec Description: TVS DIODE 3.3VWM 11VC PGTSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 308221 шт:
термін постачання 21-31 дні (днів)
15+22.20 грн
25+12.83 грн
100+9.30 грн
500+7.71 грн
1000+6.12 грн
2000+5.92 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
ESD103B102ELSE6327XTSA1 ESD103B102ELSE6327XTSA1 Infineon Technologies ESD103-B1-02series_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433ee50ba8013eea95d0b1150b Description: TVS DIODE 15VWM 48V PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 79078 шт:
термін постачання 21-31 дні (днів)
23+14.80 грн
43+7.44 грн
100+5.91 грн
500+5.23 грн
1000+4.53 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
ESD112B102ELSE6327XTSA1 ESD112B102ELSE6327XTSA1 Infineon Technologies ESD112-B1-02.pdf Description: TVS DIODE 5.3VWM 21VC TSSLP-2-4
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD200B1CSP0201XTSA1 ESD200B1CSP0201XTSA1 Infineon Technologies Infineon-ESD200-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d462503812bb0150854d43ae4c9a Description: TVS DIODE 5.5VWM 13VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 63676 шт:
термін постачання 21-31 дні (днів)
45+7.40 грн
72+4.43 грн
175+1.81 грн
500+1.57 грн
1000+1.44 грн
2000+1.41 грн
5000+1.32 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
ESD205B102ELSE6327XTSA1 ESD205B102ELSE6327XTSA1 Infineon Technologies ESD205-B1.pdf Description: TVS DIODE 5.5VWM 9VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ESD5V5S1B02LRHE6327XTSA1 ESD5V5S1B02LRHE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TVS DIODE 5.5VWM 9.2VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Power - Peak Pulse: 150W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD102U2099ELE6327XTSA1 ESD102U2099ELE6327XTSA1 Infineon Technologies ESD102-U2-099EL.pdf Description: TVS DIODE 3.3VWM 11VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD102U405LE6327XTSA1 ESD102U405LE6327XTSA1 Infineon Technologies ESD102-U4-05L.pdf Description: TVS DIODE 3.3VWM TSLP-5-2
товару немає в наявності
В кошику  од. на суму  грн.
BGF120AE6327XTSA1 BGF120AE6327XTSA1 Infineon Technologies BGF120A.pdf Description: TVS DIODE 5.3VWM 31VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 31V
Power Line Protection: No
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
16+20.55 грн
20+16.47 грн
100+14.01 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
IR3565BMTRPBF IR3565BMTRPBF Infineon Technologies IR3565B.pdf Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R045C7ATMA1 IPB65R045C7ATMA1 Infineon Technologies DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043 Description: MOSFET N-CH 650V 46A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB65R225C7ATMA1 IPB65R225C7ATMA1 Infineon Technologies DS_IPB65R225C7_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e7921c0d800bc Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP65R225C7XKSA1 IPP65R225C7XKSA1 Infineon Technologies DS_IPP65R225C7_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e78ea82013e7929d3340105 Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW65R045C7FKSA1 IPW65R045C7FKSA1 Infineon Technologies DS_IPW65R045C7_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e78ea82013e7901c1200031 Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 2261 шт:
термін постачання 21-31 дні (днів)
1+765.44 грн
30+419.05 грн
120+388.72 грн
510+352.91 грн
В кошику  од. на суму  грн.
IPB65R045C7ATMA1 IPB65R045C7ATMA1 Infineon Technologies DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043 Description: MOSFET N-CH 650V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IR3846MTRPBF IR3846MTRPBF Infineon Technologies ir3846m.pdf?fileId=5546d462533600a4015355d568a417ee Description: IC REG BUCK ADJ 35A 34PQFN
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRFS7434-7PPBF IRFS7434-7PPBF Infineon Technologies irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
товару немає в наявності
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IRFS7434TRL7PP IRFS7434TRL7PP Infineon Technologies irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
800+77.11 грн
1600+73.38 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRFR7446PBF IRFR7446PBF Infineon Technologies irfr7446pbf.pdf?fileId=5546d462533600a401535635a778211a Description: MOSFET N-CH 40V 56A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
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IRFS7434TRL7PP IRFS7434TRL7PP Infineon Technologies irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
на замовлення 6131 шт:
термін постачання 21-31 дні (днів)
2+169.37 грн
10+130.47 грн
100+104.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR7446TRPBF IRFR7446TRPBF Infineon Technologies irfr7446pbf.pdf?fileId=5546d462533600a401535635a778211a Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
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BTN8960TAAUMA1 BTN8960TAAUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC HALF BRIDGE DRVR 30A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 6V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
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BTN8980TAAUMA1 BTN8980TAAUMA1 Infineon Technologies Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051 Description: IC HALF BRIDGE DRVR 50A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 6V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
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IGP40N65F5XKSA1 IGP40N65F5XKSA1 Infineon Technologies Infineon-IGW40N65F5-DataSheet-v02_01-EN.pdf?fileId=5546d4624b0b249c014b91b9dc795778 Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
2+278.71 грн
50+135.98 грн
100+123.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGP40N65H5XKSA1 IGP40N65H5XKSA1 Infineon Technologies DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6 Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 972 шт:
термін постачання 21-31 дні (днів)
2+266.38 грн
50+129.60 грн
100+117.32 грн
500+89.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGW40N65F5FKSA1 IGW40N65F5FKSA1 Infineon Technologies Infineon-IGW40N65F5-DataSheet-v02_01-EN.pdf?fileId=5546d4624b0b249c014b91b9dc795778 Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
2+275.43 грн
30+145.62 грн
120+119.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGW40N65H5FKSA1 IGW40N65H5FKSA1 Infineon Technologies DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6 Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
1+337.91 грн
30+181.30 грн
120+149.60 грн
В кошику  од. на суму  грн.
IGW50N65F5FKSA1 IGW50N65F5FKSA1 Infineon Technologies DS_IGW50N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af8ed558f5bc5 Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
2+319.82 грн
30+170.77 грн
120+140.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY2DM1502ZXIT ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2DM1502ZXIT
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:2 1.5GHZ 8TSSOP
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CY2DP1502SXIT ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2DP1502SXIT
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:2 1.5GHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-SOIC
Frequency - Max: 1.5 GHz
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CY14V104LA-BA45XI download
CY14V104LA-BA45XI
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY14V104LA-BA25XI download
CY14V104LA-BA25XI
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY8C5466LTI-063T
CY8C5466LTI-063T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C5567LTI-079T
CY8C5567LTI-079T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY7C1480BV25-167BZXC Infineon-CY7C1480BV25_72-Mbit_%282_M_36%29_Pipelined_Sync_SRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4514c39be
CY7C1480BV25-167BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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IR3473MTR1PBF ir3473m.pdf?fileId=5546d462533600a4015355cca86d1727
IR3473MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 6A 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 27V
Topology: Buck
Supplier Device Package: 16-QFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
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IR3551MTRPBF ir3551.pdf?fileId=5546d462533600a4015355cd84a11763
IR3551MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK SYNC ADJ 50A 28PQFN
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IRF2907ZSTRLPBF irf2907zpbf.pdf?fileId=5546d462533600a4015355ded98f1902
IRF2907ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
на замовлення 9066 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+324.76 грн
10+218.12 грн
100+155.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF6728MTR1PBF irf6728mpbf.pdf?fileId=5546d462533600a4015355ed73701a9c
IRF6728MTR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V
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IRF6892STR1PBF irf6892spbf.pdf?fileId=5546d462533600a4015355f0bb961ab8
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 28A S3
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IRF7526D1TRPBF IRF7526D1PBF.pdf
IRF7526D1TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 2A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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IRFH7446TRPBF irfh7446pbf.pdf?fileId=5546d462533600a40153561f17701eef
IRFH7446TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 25 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.28 грн
10+60.57 грн
100+47.09 грн
500+37.46 грн
1000+37.05 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFH8311TRPBF irfh8311pbf.pdf?fileId=5546d462533600a40153561f94c91f12
IRFH8311TRPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 30V 32A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 10 V
на замовлення 42709 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.75 грн
10+70.86 грн
100+47.22 грн
500+34.77 грн
1000+31.70 грн
2000+29.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFH9310TRPBF irfh9310pbf.pdf?fileId=5546d462533600a40153561fe1ae1f27
IRFH9310TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 15 V
на замовлення 2525 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+123.32 грн
10+82.66 грн
100+57.82 грн
500+43.03 грн
1000+40.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR120ZTRPBF irfr120zpbf.pdf?fileId=5546d462533600a40153562d2f422050
IRFR120ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
на замовлення 30512 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.84 грн
10+36.50 грн
100+23.72 грн
500+17.08 грн
1000+15.41 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRLMS2002GTRPBF irlms2002pbf.pdf?fileId=5546d462533600a4015356690f42264a
IRLMS2002GTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 6.5A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(SOT23-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
TLE72762DATMA1 Infineon-TLE7276-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e96aef3f08
TLE72762DATMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 300MA TO252-5-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
ESD101B102ELSE6327XTSA1 ESD101_B1_02series_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002
ESD101B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 30VC PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Active
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+4.07 грн
30000+3.70 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD102U102ELSE6327XTSA1 ESD102-U1-02ELS_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d3a9e3c1b38ec
ESD102U102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC PGTSSLP23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+5.37 грн
30000+5.15 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD103B102ELSE6327XTSA1 ESD103-B1-02series_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433ee50ba8013eea95d0b1150b
ESD103B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 15VWM 48V PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+4.10 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD112B102ELSE6327XTSA1 ESD112-B1-02.pdf
ESD112B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSSLP-2-4
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD200B1CSP0201XTSA1 Infineon-ESD200-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d462503812bb0150854d43ae4c9a
ESD200B1CSP0201XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+0.96 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD205B102ELSE6327XTSA1 ESD205-B1.pdf
ESD205B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ESD5V5S1B02LRHE6327XTSA1 fundamentals-of-power-semiconductors
ESD5V5S1B02LRHE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.2VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Power - Peak Pulse: 150W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD102U2099ELE6327XTSA1 ESD102-U2-099EL.pdf
ESD102U2099ELE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
товару немає в наявності
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ESD201B203LRHE6327XTSA1 ESD201-B2-03LRH.pdf
ESD201B203LRHE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 12.1V PGTSLP3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ)
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
ESD102U405LE6327XTSA1 ESD102-U4-05L.pdf
ESD102U405LE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM TSLP-5-2
товару немає в наявності
В кошику  од. на суму  грн.
BGF120AE6327XTSA1 BGF120A.pdf
BGF120AE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 31VC
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 31V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
TLE72762DATMA1 Infineon-TLE7276-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e96aef3f08
TLE72762DATMA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 300MA TO252-5-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ESD101B102ELSE6327XTSA1 ESD101_B1_02series_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002
ESD101B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 30VC PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Active
на замовлення 73125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+10.69 грн
49+6.57 грн
100+4.89 грн
500+4.40 грн
1000+4.25 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
ESD102U102ELSE6327XTSA1 ESD102-U1-02ELS_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d3a9e3c1b38ec
ESD102U102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC PGTSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 308221 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+22.20 грн
25+12.83 грн
100+9.30 грн
500+7.71 грн
1000+6.12 грн
2000+5.92 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
ESD103B102ELSE6327XTSA1 ESD103-B1-02series_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433ee50ba8013eea95d0b1150b
ESD103B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 15VWM 48V PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 79078 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.80 грн
43+7.44 грн
100+5.91 грн
500+5.23 грн
1000+4.53 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
ESD112B102ELSE6327XTSA1 ESD112-B1-02.pdf
ESD112B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSSLP-2-4
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
ESD200B1CSP0201XTSA1 Infineon-ESD200-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d462503812bb0150854d43ae4c9a
ESD200B1CSP0201XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 63676 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
45+7.40 грн
72+4.43 грн
175+1.81 грн
500+1.57 грн
1000+1.44 грн
2000+1.41 грн
5000+1.32 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
ESD205B102ELSE6327XTSA1 ESD205-B1.pdf
ESD205B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
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ESD5V5S1B02LRHE6327XTSA1 fundamentals-of-power-semiconductors
ESD5V5S1B02LRHE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.2VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Power - Peak Pulse: 150W
Power Line Protection: No
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ESD102U2099ELE6327XTSA1 ESD102-U2-099EL.pdf
ESD102U2099ELE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
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ESD102U405LE6327XTSA1 ESD102-U4-05L.pdf
ESD102U405LE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM TSLP-5-2
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BGF120AE6327XTSA1 BGF120A.pdf
BGF120AE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 31VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 31V
Power Line Protection: No
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+20.55 грн
20+16.47 грн
100+14.01 грн
Мінімальне замовлення: 16
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IR3565BMTRPBF IR3565B.pdf
IR3565BMTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
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IPB65R045C7ATMA1 DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043
IPB65R045C7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
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IPB65R225C7ATMA1 DS_IPB65R225C7_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e7921c0d800bc
IPB65R225C7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
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IPP65R225C7XKSA1 DS_IPP65R225C7_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e78ea82013e7929d3340105
IPP65R225C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
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IPW65R045C7FKSA1 DS_IPW65R045C7_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e78ea82013e7901c1200031
IPW65R045C7FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 2261 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+765.44 грн
30+419.05 грн
120+388.72 грн
510+352.91 грн
В кошику  од. на суму  грн.
IPB65R045C7ATMA1 DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043
IPB65R045C7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
товару немає в наявності
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IR3846MTRPBF ir3846m.pdf?fileId=5546d462533600a4015355d568a417ee
IR3846MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 35A 34PQFN
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
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IRFS7434-7PPBF irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce
IRFS7434-7PPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
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IRFS7434TRL7PP irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce
IRFS7434TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+77.11 грн
1600+73.38 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRFR7446PBF irfr7446pbf.pdf?fileId=5546d462533600a401535635a778211a
IRFR7446PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 56A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
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IRFS7434TRL7PP irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce
IRFS7434TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
на замовлення 6131 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+169.37 грн
10+130.47 грн
100+104.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR7446TRPBF irfr7446pbf.pdf?fileId=5546d462533600a401535635a778211a
IRFR7446TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
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BTN8960TAAUMA1 fundamentals-of-power-semiconductors
BTN8960TAAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 40V
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 30A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 6V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
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BTN8980TAAUMA1 Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051
BTN8980TAAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 117A
Technology: DMOS
Voltage - Load: 6V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
товару немає в наявності
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IGP40N65F5XKSA1 Infineon-IGW40N65F5-DataSheet-v02_01-EN.pdf?fileId=5546d4624b0b249c014b91b9dc795778
IGP40N65F5XKSA1
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+278.71 грн
50+135.98 грн
100+123.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGP40N65H5XKSA1 DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6
IGP40N65H5XKSA1
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 972 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+266.38 грн
50+129.60 грн
100+117.32 грн
500+89.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGW40N65F5FKSA1 Infineon-IGW40N65F5-DataSheet-v02_01-EN.pdf?fileId=5546d4624b0b249c014b91b9dc795778
IGW40N65F5FKSA1
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+275.43 грн
30+145.62 грн
120+119.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGW40N65H5FKSA1 DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6
IGW40N65H5FKSA1
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+337.91 грн
30+181.30 грн
120+149.60 грн
В кошику  од. на суму  грн.
IGW50N65F5FKSA1 DS_IGW50N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af8ed558f5bc5
IGW50N65F5FKSA1
Виробник: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+319.82 грн
30+170.77 грн
120+140.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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