Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126648) > Сторінка 558 з 2111
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| MB86967PMC-G-BNDE1 | Infineon Technologies |
Description: IC MICROCONTROLLER Packaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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F161OLMHAXP | Infineon Technologies |
Description: 16-BIT MICROCONTROLLER, 20MHZPackaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC4104F64F64BAXQMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64TQFPSupplier Device Package: PG-TQFP-64-19 Peripherals: DMA, I2S, LED, POR, PWM, WDT Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Core Size: 32-Bit Single-Core Data Converters: A/D 10x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 20K x 8 Program Memory Size: 64KB (64K x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 64-TQFP Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 35 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | ||||||||||||||||
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S76HL512TC0BHB000 | Infineon Technologies |
Description: IC FLSH RAM 512MBIT HYPER 24FBGAMemory Interface: HyperBus Part Status: Active Supplier Device Package: 24-FBGA (8x8) Memory Format: FLASH, RAM Clock Frequency: 166 MHz Technology: FLASH, DRAM Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C Memory Type: Non-Volatile, Volatile Memory Size: 512Mbit (FLASH), 64Mbit (RAM) Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 413 шт: термін постачання 21-31 дні (днів) |
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S76HS512TC0BHB010 | Infineon Technologies |
Description: IC FLSH RAM 512MBIT HYPER 24FBGAPart Status: Active Supplier Device Package: 24-FBGA (8x8) Memory Format: FLASH, RAM Clock Frequency: 200 MHz Technology: FLASH, DRAM Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C Memory Type: Non-Volatile, Volatile Memory Size: 512Mbit (FLASH), 64Mbit (RAM) Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray Memory Interface: HyperBus DigiKey Programmable: Not Verified |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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S76HL512TC0BHB003 | Infineon Technologies |
Description: IC FLSH RAM 512MBIT HYPRBS 24BGAMemory Interface: HyperBus Part Status: Active Supplier Device Package: PG-BGA-24 Memory Format: FLASH, RAM Clock Frequency: 166 MHz Technology: FLASH, DRAM Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C Memory Type: Non-Volatile, Volatile Memory Size: 512Mbit (FLASH), 64Mbit (RAM) Mounting Type: Surface Mount Package / Case: 24-BGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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S76HL512TC0BHB003 | Infineon Technologies |
Description: IC FLSH RAM 512MBIT HYPRBS 24BGAMemory Interface: HyperBus Part Status: Active Supplier Device Package: PG-BGA-24 Memory Format: FLASH, RAM Clock Frequency: 166 MHz Technology: FLASH, DRAM Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C Memory Type: Non-Volatile, Volatile Memory Size: 512Mbit (FLASH), 64Mbit (RAM) Mounting Type: Surface Mount Package / Case: 24-BGA Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
на замовлення 1996 шт: термін постачання 21-31 дні (днів) |
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| CYT2BL8CAAQ0AZEGST | Infineon Technologies |
Description: IC MCU 32BT 4.063MB FLSH 176LQFPMounting Type: Surface Mount Package / Case: 176-LQFP Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Number of I/O: 152 Part Status: Active Supplier Device Package: 176-LQFP (24x24) Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Data Converters: A/D 82x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 512K x 8 Program Memory Size: 4.063MB (4.063M x 8) Speed: 100MHz, 160MHz |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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S78HL512TC0BHB000 | Infineon Technologies |
Description: IC FLASH RAM 512MBIT SPI 24FBGAMemory Interface: SPI - Octal I/O Part Status: Active Supplier Device Package: 24-FBGA (8x8) Memory Format: FLASH, RAM Clock Frequency: 166 MHz Technology: FLASH, RAM Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile, Volatile Memory Size: 512Mbit (FLASH), 64Mbit (RAM) Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 2594 шт: термін постачання 21-31 дні (днів) |
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S78HS512TC0BHB010 | Infineon Technologies |
Description: IC FLASH RAM 512MBIT SPI 24FBGAMemory Interface: SPI - Octal I/O Part Status: Active Supplier Device Package: 24-FBGA (8x8) Memory Format: FLASH, RAM Clock Frequency: 200 MHz Technology: FLASH, RAM Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile, Volatile Memory Size: 512Mbit (FLASH), 64Mbit (RAM) Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 2427 шт: термін постачання 21-31 дні (днів) |
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| S25FL256LAGBHB030 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 24BGADigiKey Programmable: Not Verified Memory Organization: 32M x 8 Access Time: 6 ns Memory Interface: SPI - Quad I/O, QPI Write Cycle Time - Word, Page: 60µs, 1.2ms Part Status: Active Supplier Device Package: 24-BGA (6x8) Memory Format: FLASH Clock Frequency: 133 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | |||||||||||||||||
| S25FL256LAGBHB033 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 24BGADigiKey Programmable: Not Verified Memory Organization: 32M x 8 Access Time: 6 ns Memory Interface: SPI - Quad I/O, QPI Write Cycle Time - Word, Page: 60µs, 1.2ms Part Status: Not For New Designs Supplier Device Package: 24-BGA (6x8) Memory Format: FLASH Clock Frequency: 133 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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XC164CS16F40FBBFXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 100TQFPPackaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 14x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-TQFP-100-5 Part Status: Last Time Buy Number of I/O: 79 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | ||||||||||||||||
| TZ800N16KOFTIMHDSA1 | Infineon Technologies |
Description: MODULE Part Status: Obsolete Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRL40DM247XTMA1 | Infineon Technologies |
Description: TRENCH <= 40VInput Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MG-WDSON-8-904 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric ME Packaging: Cut Tape (CT) |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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IAUA250N08S5N018AUMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( PG-HSOF-5Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 150µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1805 шт: термін постачання 21-31 дні (днів) |
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BCR430ULEDBOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BCR430UContents: Board(s) Part Status: Active Outputs and Type: 1 Non-Isolated Output Supplied Contents: Board(s) Utilized IC / Part: BCR430U Current - Output / Channel: 100mA Voltage - Input: 6V ~ 42V Voltage - Output: 1.24V Packaging: Box |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CY8C20637-24LQXIT | Infineon Technologies |
Description: IC CAPSENCE 8K FLASH 48QFNPackaging: Tape & Reel (TR) Package / Case: 48-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-QFN (6x6) Part Status: Active Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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IDH10G65C5XKSA2 | Infineon Technologies |
Description: DIODE SIL CARB 650V 10A PGTO2201Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 180 µA @ 650 V |
на замовлення 381 шт: термін постачання 21-31 дні (днів) |
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FS15R06VL4B2BOMA1 | Infineon Technologies |
Description: MOD IGBT LOW PWR EASY750-1 Part Status: Obsolete Packaging: Bulk |
на замовлення 3760 шт: термін постачання 21-31 дні (днів) |
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FS15R06VL4B2BOMA1 | Infineon Technologies |
Description: MOD IGBT LOW PWR EASY750-1 Part Status: Obsolete Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP055N03LGXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO220-3Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 68W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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BFP405FH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 4.5V 25GHZ 4-TSFPNoise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Frequency - Transition: 25GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Voltage - Collector Emitter Breakdown (Max): 4.5V Current - Collector (Ic) (Max): 25mA Power - Max: 75mW Gain: 22.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Part Status: Active Supplier Device Package: 4-TSFP Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BFP405FH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 4.5V 25GHZ 4-TSFPNoise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Frequency - Transition: 25GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Voltage - Collector Emitter Breakdown (Max): 4.5V Current - Collector (Ic) (Max): 25mA Power - Max: 75mW Gain: 22.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Part Status: Active Supplier Device Package: 4-TSFP Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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IDH03G65C5XKSA2 | Infineon Technologies |
Description: DIODE SIL CARB 650V 3A TO220-2-1Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Not For New Designs Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-1 Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 100pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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XMC4402F100F256BAXQMA1 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 100LQFPNumber of I/O: 55 Part Status: Active Supplier Device Package: PG-LQFP-100-25 Peripherals: DMA, I2S, LED, POR, PWM, WDT Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 80K x 8 Program Memory Size: 256KB (256K x 8) Speed: 120MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICE2QR4765GXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 52kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DSO-12-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Part Status: Active Power (Watts): 29 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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ICE2QR4765GXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 52kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DSO-12-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Part Status: Active Power (Watts): 29 W |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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CY9BF506NBPMC-G-UNE2 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 100LQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 512KB (512K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Part Status: Active Number of I/O: 80 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCR133SH6433XTMA1 | Infineon Technologies |
Description: TRANS PREBIAS 2NPN 50V SOT363Part Status: Discontinued at Digi-Key Supplier Device Package: PG-SOT363-PO Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||||
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SPW20N60S5FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 20A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: PG-TO247-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY91F585ASGPMC1-GTE1 | Infineon Technologies |
Description: IC MCU 32BIT 576KB FLASH 64LQFPPart Status: Last Time Buy Supplier Device Package: 64-LQFP (10x10) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b; D/A 1x10b Core Processor: FR81S EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 56K x 8 Program Memory Size: 576KB (576K x 8) Speed: 128MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||||||
| SK-86R12-01 | Infineon Technologies |
Description: DEV KIT TOOL KIT PWR MGMT Part Status: Obsolete Supplied Contents: Board(s) Utilized IC / Part: 86R12-01 Type: Interface Function: USB Controller Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SK-86R12-CPU01 | Infineon Technologies |
Description: DEV KIT TOOL KIT PWR MGMT Part Status: Obsolete Supplied Contents: Board(s) Utilized IC / Part: 86R12 Type: Interface Function: USB Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SK-86R11-BASE | Infineon Technologies |
Description: DEV KIT TOOL KIT PWR MGMT Part Status: Obsolete Supplied Contents: Board(s) Utilized IC / Part: 86R11 Type: Interface Function: USB Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SK-86R12-ADA-JTAG | Infineon Technologies |
Description: DEV KIT TOOL KIT PWR MGMT Part Status: Obsolete Supplied Contents: Board(s) Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TDA21475AUMA1 | Infineon Technologies |
Description: IFX POWERSTAGE/DRIVER PG-IQFN-39Packaging: Tape & Reel (TR) Package / Case: 41-PowerWFQFN Mounting Type: Surface Mount Voltage - Supply: 4.25V ~ 16V Input Type: Non-Inverting Supplier Device Package: PG-IQFN-39-5 Channel Type: Synchronous Number of Drivers: 4 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TDA21475AUMA1 | Infineon Technologies |
Description: IFX POWERSTAGE/DRIVER PG-IQFN-39Packaging: Cut Tape (CT) Package / Case: 41-PowerWFQFN Mounting Type: Surface Mount Voltage - Supply: 4.25V ~ 16V Input Type: Non-Inverting Supplier Device Package: PG-IQFN-39-5 Channel Type: Synchronous Number of Drivers: 4 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDA21472AUMA1 | Infineon Technologies |
Description: IC GATE DRVR C_IFX POWERSTAGEPackaging: Tape & Reel (TR) Part Status: Active Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.25V ~ 16V Supplier Device Package: PG-IQFN-39-2 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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CYPAP111A3-10SXQT | Infineon Technologies |
Description: PRIMARY SIDE STARTUP CONTROLLERControl Features: Frequency Control, Soft Start Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO Supplier Device Package: 10-SOIC Voltage - Supply (Vcc/Vdd): 85V ~ 265V Topology: Flyback, Secondary Side SR Output Isolation: Isolated Voltage - Breakdown: 500V Internal Switch(s): No Frequency - Switching: 30kHz Duty Cycle: 70% Mounting Type: Surface Mount Package / Case: 10-SOP (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Active Region Utilized: North America Input Connector: NEMA 1-15P Form: Wall Mount (Class II) Input Type: Fixed Blade Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Input: 85 ~ 265 VAC Output Connector: USB Micro |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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CYW20730A1KFBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 64FBGADigiKey Programmable: Not Verified Part Status: Active Serial Interfaces: I2C, SPI, UART RF Family/Standard: Bluetooth Modulation: GFSK GPIO: 4 Supplier Device Package: 64-FBGA (7x7) Current - Transmitting: 19mA ~ 24mA Data Rate (Max): 1Mbps Current - Receiving: 26.6mA Protocol: Bluetooth v3.0 Power - Output: 4dBm Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 70°C Type: TxRx + MCU Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -88dBm Package / Case: 64-VFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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CYW20730A1KFBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 64FBGADigiKey Programmable: Not Verified Package / Case: 64-VFBGA Packaging: Cut Tape (CT) Part Status: Active Serial Interfaces: I2C, SPI, UART RF Family/Standard: Bluetooth Modulation: GFSK GPIO: 4 Supplier Device Package: 64-FBGA (7x7) Current - Transmitting: 19mA ~ 24mA Data Rate (Max): 1Mbps Current - Receiving: 26.6mA Protocol: Bluetooth v3.0 Power - Output: 4dBm Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 70°C Type: TxRx + MCU Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -88dBm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IMW120R030M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 56A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 10mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V |
на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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EVAL45W19VFLYBP7TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICE2QS03GContents: Board(s) Power - Output: 45W Part Status: Active Outputs and Type: 1 Isolated Output Main Purpose: AC/DC, Primary Side Supplied Contents: Board(s) Utilized IC / Part: ICE2QS03G Board Type: Fully Populated Regulator Topology: Flyback Current - Output: 2.4A Voltage - Input: 90 ~ 265 VAC Voltage - Output: 19V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EVAL40W19VFLYBP7TOBO2 | Infineon Technologies |
Description: EVAL BOARD FOR ICE2QS03GPackaging: Bulk Function: Battery Charger Type: Power Management Utilized IC / Part: ICE2QS03G Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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BSC884N03MS G | Infineon Technologies |
Description: MOSFET N-CH 34V 17A/85A TDSONRds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 34 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY15B128Q-SXA | Infineon Technologies |
Description: IC FRAM 128KBIT SPI 40MHZ 8SOICDigiKey Programmable: Not Verified Memory Organization: 16K x 8 Memory Interface: SPI Part Status: Active Supplier Device Package: 8-SOIC Memory Format: FRAM Clock Frequency: 40 MHz Technology: FRAM (Ferroelectric RAM) Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 128Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
на замовлення 615 шт: термін постачання 21-31 дні (днів) |
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FM24CL16B-DGTR | Infineon Technologies |
Description: IC FRAM 16KBIT I2C 1MHZ 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 1 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (4x4.5) Part Status: Active Memory Interface: I2C Access Time: 550 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FM24CL16B-DGTR | Infineon Technologies |
Description: IC FRAM 16KBIT I2C 1MHZ 8DFNPackaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 1 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (4x4.5) Part Status: Active Memory Interface: I2C Access Time: 550 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 10100 шт: термін постачання 21-31 дні (днів) |
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IPP110N20N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 88A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V |
на замовлення 4874 шт: термін постачання 21-31 дні (днів) |
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BC849CWH6327XTSA1 | Infineon Technologies |
Description: TRANS NPN 30V 0.1A PG-SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 250 mW |
товару немає в наявності |
Мінімальне замовлення: 42000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE5501EVALKITTOBO1 | Infineon Technologies |
Description: EVAL TLE5501 ANGLE SENSORPackaging: Bulk Sensor Type: Magnetic, Rotary Position Utilized IC / Part: TLE5501 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 360° Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TT240N16SOFHPSA1 | Infineon Technologies |
Description: LA-T-BOND MODULEVoltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 275 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 240 A Number of SCRs, Diodes: 2 SCRs Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Current - Gate Trigger (Igt) (Max): 145 mA Current - Hold (Ih) (Max): 200 mA Structure: Series Connection - All SCRs Operating Temperature: 130°C (TC) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFB5615PBF | Infineon Technologies |
Description: MOSFET N-CH 150V 35A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V |
на замовлення 884 шт: термін постачання 21-31 дні (днів) |
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ISZ0501NLSATMA1 | Infineon Technologies |
Description: 25V, N-CH MOSFET, LOGIC LEVEL, PInput Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-25 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISZ0901NLSATMA1 | Infineon Technologies |
Description: 25V, N-CH MOSFET, LOGIC LEVEL, PInput Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-25 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISZ0901NLSATMA1 | Infineon Technologies |
Description: 25V, N-CH MOSFET, LOGIC LEVEL, PInput Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-25 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TD280N16SOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1600V 520A MODULEVoltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 520 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 280 A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz Current - Gate Trigger (Igt) (Max): 150 mA Current - Hold (Ih) (Max): 150 mA Structure: Series Connection - SCR/Diode Operating Temperature: -40°C ~ 130°C Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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TD330N16KOFTIMHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 520A MODULEVoltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 520 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 330 A Number of SCRs, Diodes: 2 SCRs Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz Current - Gate Trigger (Igt) (Max): 200 mA Current - Hold (Ih) (Max): 300 mA Structure: Series Connection - SCR/Diode Operating Temperature: -40°C ~ 130°C Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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TD330N16KOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 1.6KV 520A MODULECurrent - On State (It (RMS)) (Max): 520 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 330 A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - Gate Trigger (Igt) (Max): 200 mA Current - Hold (Ih) (Max): 300 mA Structure: Series Connection - SCR/Diode Operating Temperature: 130°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Voltage - Off State: 1.6 kV |
на замовлення 67 шт: термін постачання 21-31 дні (днів) |
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| F161OLMHAXP |
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Виробник: Infineon Technologies
Description: 16-BIT MICROCONTROLLER, 20MHZ
Packaging: Bulk
Part Status: Obsolete
Description: 16-BIT MICROCONTROLLER, 20MHZ
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| XMC4104F64F64BAXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Supplier Device Package: PG-TQFP-64-19
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 10x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 20K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-TQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 35
Part Status: Active
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Supplier Device Package: PG-TQFP-64-19
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 10x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 20K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-TQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 35
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 960 шт
В кошику
од. на суму грн.
| S76HL512TC0BHB000 |
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Виробник: Infineon Technologies
Description: IC FLSH RAM 512MBIT HYPER 24FBGA
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (8x8)
Memory Format: FLASH, RAM
Clock Frequency: 166 MHz
Technology: FLASH, DRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC FLSH RAM 512MBIT HYPER 24FBGA
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (8x8)
Memory Format: FLASH, RAM
Clock Frequency: 166 MHz
Technology: FLASH, DRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 413 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1363.05 грн |
| 10+ | 1215.81 грн |
| 25+ | 1177.52 грн |
| 50+ | 1078.02 грн |
| 100+ | 1051.26 грн |
| 260+ | 1014.96 грн |
| S76HS512TC0BHB010 |
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Виробник: Infineon Technologies
Description: IC FLSH RAM 512MBIT HYPER 24FBGA
Part Status: Active
Supplier Device Package: 24-FBGA (8x8)
Memory Format: FLASH, RAM
Clock Frequency: 200 MHz
Technology: FLASH, DRAM
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Memory Interface: HyperBus
DigiKey Programmable: Not Verified
Description: IC FLSH RAM 512MBIT HYPER 24FBGA
Part Status: Active
Supplier Device Package: 24-FBGA (8x8)
Memory Format: FLASH, RAM
Clock Frequency: 200 MHz
Technology: FLASH, DRAM
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Memory Interface: HyperBus
DigiKey Programmable: Not Verified
на замовлення 53 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1421.84 грн |
| 10+ | 1268.11 грн |
| 25+ | 1227.97 грн |
| 50+ | 1124.20 грн |
| S76HL512TC0BHB003 |
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Виробник: Infineon Technologies
Description: IC FLSH RAM 512MBIT HYPRBS 24BGA
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: PG-BGA-24
Memory Format: FLASH, RAM
Clock Frequency: 166 MHz
Technology: FLASH, DRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-BGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC FLSH RAM 512MBIT HYPRBS 24BGA
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: PG-BGA-24
Memory Format: FLASH, RAM
Clock Frequency: 166 MHz
Technology: FLASH, DRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-BGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| S76HL512TC0BHB003 |
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Виробник: Infineon Technologies
Description: IC FLSH RAM 512MBIT HYPRBS 24BGA
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: PG-BGA-24
Memory Format: FLASH, RAM
Clock Frequency: 166 MHz
Technology: FLASH, DRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-BGA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC FLSH RAM 512MBIT HYPRBS 24BGA
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: PG-BGA-24
Memory Format: FLASH, RAM
Clock Frequency: 166 MHz
Technology: FLASH, DRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-BGA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1261.94 грн |
| 10+ | 1125.76 грн |
| 25+ | 1090.30 грн |
| 50+ | 998.17 грн |
| 100+ | 973.38 грн |
| 250+ | 970.79 грн |
| CYT2BL8CAAQ0AZEGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 176LQFP
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 152
Part Status: Active
Supplier Device Package: 176-LQFP (24x24)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 82x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 512K x 8
Program Memory Size: 4.063MB (4.063M x 8)
Speed: 100MHz, 160MHz
Description: IC MCU 32BT 4.063MB FLSH 176LQFP
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 152
Part Status: Active
Supplier Device Package: 176-LQFP (24x24)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 82x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 512K x 8
Program Memory Size: 4.063MB (4.063M x 8)
Speed: 100MHz, 160MHz
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1646.79 грн |
| 10+ | 1462.32 грн |
| 25+ | 1396.56 грн |
| 100+ | 1171.86 грн |
| S78HL512TC0BHB000 |
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Виробник: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Memory Interface: SPI - Octal I/O
Part Status: Active
Supplier Device Package: 24-FBGA (8x8)
Memory Format: FLASH, RAM
Clock Frequency: 166 MHz
Technology: FLASH, RAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Memory Interface: SPI - Octal I/O
Part Status: Active
Supplier Device Package: 24-FBGA (8x8)
Memory Format: FLASH, RAM
Clock Frequency: 166 MHz
Technology: FLASH, RAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 2594 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1105.96 грн |
| 10+ | 987.11 грн |
| 25+ | 955.98 грн |
| 50+ | 875.22 грн |
| 100+ | 853.49 грн |
| 260+ | 824.02 грн |
| 520+ | 804.75 грн |
| S78HS512TC0BHB010 |
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Виробник: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Memory Interface: SPI - Octal I/O
Part Status: Active
Supplier Device Package: 24-FBGA (8x8)
Memory Format: FLASH, RAM
Clock Frequency: 200 MHz
Technology: FLASH, RAM
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Memory Interface: SPI - Octal I/O
Part Status: Active
Supplier Device Package: 24-FBGA (8x8)
Memory Format: FLASH, RAM
Clock Frequency: 200 MHz
Technology: FLASH, RAM
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile, Volatile
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 2427 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2394.55 грн |
| 10+ | 2134.83 грн |
| 25+ | 2066.87 грн |
| 50+ | 1891.87 грн |
| 100+ | 1844.61 грн |
| 260+ | 1780.66 грн |
| S25FL256LAGBHB030 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 1.2ms
Part Status: Active
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 1.2ms
Part Status: Active
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 338 шт
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| S25FL256LAGBHB033 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 1.2ms
Part Status: Not For New Designs
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 1.2ms
Part Status: Not For New Designs
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| XC164CS16F40FBBFXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Last Time Buy
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Last Time Buy
Number of I/O: 79
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1400 шт
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| IRL40DM247XTMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-8-904
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ME
Packaging: Cut Tape (CT)
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-8-904
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ME
Packaging: Cut Tape (CT)
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.63 грн |
| 10+ | 151.94 грн |
| IAUA250N08S5N018AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1805 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 296.28 грн |
| 10+ | 188.47 грн |
| 100+ | 133.36 грн |
| 500+ | 115.41 грн |
| BCR430ULEDBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR BCR430U
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: BCR430U
Current - Output / Channel: 100mA
Voltage - Input: 6V ~ 42V
Voltage - Output: 1.24V
Packaging: Box
Description: EVAL BOARD FOR BCR430U
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: BCR430U
Current - Output / Channel: 100mA
Voltage - Input: 6V ~ 42V
Voltage - Output: 1.24V
Packaging: Box
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1232.16 грн |
| CY8C20637-24LQXIT |
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Виробник: Infineon Technologies
Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC CAPSENCE 8K FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| IDH10G65C5XKSA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Description: DIODE SIL CARB 650V 10A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
на замовлення 381 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 313.53 грн |
| 50+ | 154.90 грн |
| 100+ | 140.67 грн |
| FS15R06VL4B2BOMA1 |
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY750-1
Part Status: Obsolete
Packaging: Bulk
Description: MOD IGBT LOW PWR EASY750-1
Part Status: Obsolete
Packaging: Bulk
на замовлення 3760 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 1492.38 грн |
| FS15R06VL4B2BOMA1 |
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY750-1
Part Status: Obsolete
Packaging: Tray
Description: MOD IGBT LOW PWR EASY750-1
Part Status: Obsolete
Packaging: Tray
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| IPP055N03LGXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 68W (Tc)
Description: MOSFET N-CH 30V 50A TO220-3
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 68W (Tc)
товару немає в наявності
Мінімальне замовлення: 500 шт
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| BFP405FH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 4.5V 25GHZ 4-TSFP
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 25mA
Power - Max: 75mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Part Status: Active
Supplier Device Package: 4-TSFP
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 4.5V 25GHZ 4-TSFP
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 25mA
Power - Max: 75mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Part Status: Active
Supplier Device Package: 4-TSFP
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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| BFP405FH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 4.5V 25GHZ 4-TSFP
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 25mA
Power - Max: 75mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Part Status: Active
Supplier Device Package: 4-TSFP
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 4.5V 25GHZ 4-TSFP
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 25mA
Power - Max: 75mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Part Status: Active
Supplier Device Package: 4-TSFP
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.51 грн |
| 20+ | 15.85 грн |
| 25+ | 14.10 грн |
| 100+ | 11.42 грн |
| 250+ | 10.55 грн |
| IDH03G65C5XKSA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 3A TO220-2-1
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Not For New Designs
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 3A TO220-2-1
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Not For New Designs
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Мінімальне замовлення: 500 шт
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| XMC4402F100F256BAXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Number of I/O: 55
Part Status: Active
Supplier Device Package: PG-LQFP-100-25
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 80K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Number of I/O: 55
Part Status: Active
Supplier Device Package: PG-LQFP-100-25
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 80K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
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| ICE2QR4765GXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 29 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 29 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| ICE2QR4765GXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 29 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 29 W
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.25 грн |
| 10+ | 73.74 грн |
| 25+ | 66.90 грн |
| 100+ | 55.76 грн |
| 250+ | 52.41 грн |
| 500+ | 50.39 грн |
| 1000+ | 49.11 грн |
| CY9BF506NBPMC-G-UNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 80
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 80
DigiKey Programmable: Not Verified
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| BCR133SH6433XTMA1 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS 2NPN 50V SOT363
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SOT363-PO
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS 2NPN 50V SOT363
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SOT363-PO
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 20000 шт
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| SPW20N60S5FKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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| CY91F585ASGPMC1-GTE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Part Status: Last Time Buy
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 1x10b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 56K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 128MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Part Status: Last Time Buy
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 1x10b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 56K x 8
Program Memory Size: 576KB (576K x 8)
Speed: 128MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1600 шт
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| SK-86R12-01 |
Виробник: Infineon Technologies
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R12-01
Type: Interface
Function: USB Controller
Packaging: Box
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R12-01
Type: Interface
Function: USB Controller
Packaging: Box
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| SK-86R12-CPU01 |
Виробник: Infineon Technologies
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R12
Type: Interface
Function: USB
Packaging: Box
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R12
Type: Interface
Function: USB
Packaging: Box
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| SK-86R11-BASE |
Виробник: Infineon Technologies
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R11
Type: Interface
Function: USB
Packaging: Box
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: 86R11
Type: Interface
Function: USB
Packaging: Box
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| SK-86R12-ADA-JTAG |
Виробник: Infineon Technologies
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Packaging: Box
Description: DEV KIT TOOL KIT PWR MGMT
Part Status: Obsolete
Supplied Contents: Board(s)
Packaging: Box
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| TDA21475AUMA1 |
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Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 41-PowerWFQFN
Mounting Type: Surface Mount
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-5
Channel Type: Synchronous
Number of Drivers: 4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 41-PowerWFQFN
Mounting Type: Surface Mount
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-5
Channel Type: Synchronous
Number of Drivers: 4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| TDA21475AUMA1 |
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Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 41-PowerWFQFN
Mounting Type: Surface Mount
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-5
Channel Type: Synchronous
Number of Drivers: 4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IFX POWERSTAGE/DRIVER PG-IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 41-PowerWFQFN
Mounting Type: Surface Mount
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-5
Channel Type: Synchronous
Number of Drivers: 4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| TDA21472AUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR C_IFX POWERSTAGE
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-39-2
Description: IC GATE DRVR C_IFX POWERSTAGE
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-39-2
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| CYPAP111A3-10SXQT |
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Виробник: Infineon Technologies
Description: PRIMARY SIDE STARTUP CONTROLLER
Control Features: Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: 10-SOIC
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 500V
Internal Switch(s): No
Frequency - Switching: 30kHz
Duty Cycle: 70%
Mounting Type: Surface Mount
Package / Case: 10-SOP (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Region Utilized: North America
Input Connector: NEMA 1-15P
Form: Wall Mount (Class II)
Input Type: Fixed Blade
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Input: 85 ~ 265 VAC
Output Connector: USB Micro
Description: PRIMARY SIDE STARTUP CONTROLLER
Control Features: Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: 10-SOIC
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 500V
Internal Switch(s): No
Frequency - Switching: 30kHz
Duty Cycle: 70%
Mounting Type: Surface Mount
Package / Case: 10-SOP (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Region Utilized: North America
Input Connector: NEMA 1-15P
Form: Wall Mount (Class II)
Input Type: Fixed Blade
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Input: 85 ~ 265 VAC
Output Connector: USB Micro
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 44.34 грн |
| CYW20730A1KFBGT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 64FBGA
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 4
Supplier Device Package: 64-FBGA (7x7)
Current - Transmitting: 19mA ~ 24mA
Data Rate (Max): 1Mbps
Current - Receiving: 26.6mA
Protocol: Bluetooth v3.0
Power - Output: 4dBm
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 70°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -88dBm
Package / Case: 64-VFBGA
Packaging: Tape & Reel (TR)
Description: IC RF TXRX+MCU BLE 64FBGA
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 4
Supplier Device Package: 64-FBGA (7x7)
Current - Transmitting: 19mA ~ 24mA
Data Rate (Max): 1Mbps
Current - Receiving: 26.6mA
Protocol: Bluetooth v3.0
Power - Output: 4dBm
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 70°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -88dBm
Package / Case: 64-VFBGA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| CYW20730A1KFBGT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 64FBGA
DigiKey Programmable: Not Verified
Package / Case: 64-VFBGA
Packaging: Cut Tape (CT)
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 4
Supplier Device Package: 64-FBGA (7x7)
Current - Transmitting: 19mA ~ 24mA
Data Rate (Max): 1Mbps
Current - Receiving: 26.6mA
Protocol: Bluetooth v3.0
Power - Output: 4dBm
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 70°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -88dBm
Description: IC RF TXRX+MCU BLE 64FBGA
DigiKey Programmable: Not Verified
Package / Case: 64-VFBGA
Packaging: Cut Tape (CT)
Part Status: Active
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 4
Supplier Device Package: 64-FBGA (7x7)
Current - Transmitting: 19mA ~ 24mA
Data Rate (Max): 1Mbps
Current - Receiving: 26.6mA
Protocol: Bluetooth v3.0
Power - Output: 4dBm
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 70°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -88dBm
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| IMW120R030M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
Description: SICFET N-CH 1.2KV 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1174.15 грн |
| 30+ | 696.54 грн |
| 120+ | 601.48 грн |
| EVAL45W19VFLYBP7TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE2QS03G
Contents: Board(s)
Power - Output: 45W
Part Status: Active
Outputs and Type: 1 Isolated Output
Main Purpose: AC/DC, Primary Side
Supplied Contents: Board(s)
Utilized IC / Part: ICE2QS03G
Board Type: Fully Populated
Regulator Topology: Flyback
Current - Output: 2.4A
Voltage - Input: 90 ~ 265 VAC
Voltage - Output: 19V
Packaging: Bulk
Description: EVAL BOARD FOR ICE2QS03G
Contents: Board(s)
Power - Output: 45W
Part Status: Active
Outputs and Type: 1 Isolated Output
Main Purpose: AC/DC, Primary Side
Supplied Contents: Board(s)
Utilized IC / Part: ICE2QS03G
Board Type: Fully Populated
Regulator Topology: Flyback
Current - Output: 2.4A
Voltage - Input: 90 ~ 265 VAC
Voltage - Output: 19V
Packaging: Bulk
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| EVAL40W19VFLYBP7TOBO2 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE2QS03G
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICE2QS03G
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR ICE2QS03G
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICE2QS03G
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5462.40 грн |
| BSC884N03MS G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 17A/85A TDSON
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Description: MOSFET N-CH 34V 17A/85A TDSON
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
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| CY15B128Q-SXA |
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Виробник: Infineon Technologies
Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 615 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 391.12 грн |
| FM24CL16B-DGTR |
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Виробник: Infineon Technologies
Description: IC FRAM 16KBIT I2C 1MHZ 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 16KBIT I2C 1MHZ 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 140.87 грн |
| FM24CL16B-DGTR |
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Виробник: Infineon Technologies
Description: IC FRAM 16KBIT I2C 1MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 16KBIT I2C 1MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 10100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 183.41 грн |
| 10+ | 165.22 грн |
| 25+ | 160.47 грн |
| 50+ | 147.19 грн |
| 100+ | 143.78 грн |
| 250+ | 139.28 грн |
| 500+ | 133.67 грн |
| 1000+ | 130.36 грн |
| IPP110N20N3GXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 88A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Description: MOSFET N-CH 200V 88A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 4874 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 395.04 грн |
| 10+ | 252.40 грн |
| 50+ | 197.63 грн |
| 100+ | 168.93 грн |
| 500+ | 139.96 грн |
| BC849CWH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
Description: TRANS NPN 30V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
товару немає в наявності
Мінімальне замовлення: 42000 шт
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| TLE5501EVALKITTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL TLE5501 ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5501
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Description: EVAL TLE5501 ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5501
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4706.81 грн |
| TT240N16SOFHPSA1 |
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Виробник: Infineon Technologies
Description: LA-T-BOND MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 275 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 240 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: 130°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: LA-T-BOND MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 275 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 240 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: 130°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| IRFB5615PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 35A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Description: MOSFET N-CH 150V 35A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
на замовлення 884 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.49 грн |
| 10+ | 111.10 грн |
| 50+ | 84.46 грн |
| 100+ | 71.21 грн |
| 500+ | 57.07 грн |
| ISZ0501NLSATMA1 |
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Виробник: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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| ISZ0901NLSATMA1 |
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Виробник: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| ISZ0901NLSATMA1 |
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Виробник: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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| TD280N16SOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1600V 520A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 280 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 1600V 520A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 280 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8335.09 грн |
| TD330N16KOFTIMHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 330 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 1.6KV 520A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 330 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13763.00 грн |
| 12+ | 11726.33 грн |
| TD330N16KOFHPSA2 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 330 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 130°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 520A MODULE
Current - On State (It (RMS)) (Max): 520 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 330 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 130°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Voltage - Off State: 1.6 kV
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13260.58 грн |
| 12+ | 11232.89 грн |







































