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KITXMC45RELAXLITEV1TOBO1 KITXMC45RELAXLITEV1TOBO1 Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: RELAX LITE KIT XMC4500 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4500
Platform: Relax Lite Kit
Part Status: Active
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
1+2111.97 грн
В кошику  од. на суму  грн.
S29AS016J70BHI040 S29AS016J70BHI040 Infineon Technologies Infineon-S29AS016J_16_Mbit_(2_M_x_8-Bit_1_M_x_16-Bit)_1.8_V_Boot_Sector_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed720655837&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 1683 шт:
термін постачання 21-31 дні (днів)
3+155.84 грн
10+140.07 грн
25+136.03 грн
50+124.78 грн
100+121.87 грн
338+116.78 грн
676+112.05 грн
1014+111.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB7530PBF IRFB7530PBF Infineon Technologies irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3 Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
на замовлення 1406 шт:
термін постачання 21-31 дні (днів)
2+305.72 грн
50+150.89 грн
100+136.98 грн
500+105.69 грн
1000+98.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C65217-24LTXI CY7C65217-24LTXI Infineon Technologies Infineon-CY7C65210_CY7C65217_CY7C65210A_CY7C65217A_USB_BILLBOARD_CONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece5f5d48f2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-f Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4842 шт:
термін постачання 21-31 дні (днів)
2+206.09 грн
10+178.53 грн
25+168.74 грн
80+137.24 грн
230+130.20 грн
490+123.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C65211-24LTXIT CY7C65211-24LTXIT Infineon Technologies Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_ Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C65211-24LTXIT CY7C65211-24LTXIT Infineon Technologies Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_ Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4227 шт:
термін постачання 21-31 дні (днів)
2+252.07 грн
10+182.30 грн
25+167.10 грн
100+141.15 грн
250+133.68 грн
500+129.18 грн
1000+123.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S80KS5122GABHV020 S80KS5122GABHV020 Infineon Technologies S80KS5122.pdf Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 311 шт:
термін постачання 21-31 дні (днів)
1+715.34 грн
10+639.97 грн
25+620.32 грн
50+568.25 грн
100+554.43 грн
В кошику  од. на суму  грн.
S80KS5122GABHI020 S80KS5122GABHI020 Infineon Technologies S80KS5122.pdf Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+663.40 грн
10+594.13 грн
В кошику  од. на суму  грн.
S80KS5122GABHB020 S80KS5122GABHB020 Infineon Technologies Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
1+818.39 грн
10+732.23 грн
25+709.68 грн
50+650.04 грн
100+634.18 грн
338+606.69 грн
В кошику  од. на суму  грн.
CYT2B63BADQ0AZSGS CYT2B63BADQ0AZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 1548 шт:
термін постачання 21-31 дні (днів)
1+873.74 грн
10+658.26 грн
25+612.39 грн
80+533.83 грн
230+506.66 грн
440+493.56 грн
В кошику  од. на суму  грн.
CYT2B63BADQ0AZEGS CYT2B63BADQ0AZEGS Infineon Technologies Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 1526 шт:
термін постачання 21-31 дні (днів)
1+894.18 грн
10+673.68 грн
25+626.89 грн
80+546.60 грн
230+518.90 грн
440+505.54 грн
В кошику  од. на суму  грн.
CYT2B63BADQ0AZEGST CYT2B63BADQ0AZEGST Infineon Technologies Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
товару немає в наявності
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S80KS5122GABHV023 S80KS5122GABHV023 Infineon Technologies S80KS5122.pdf Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S80KS5122GABHM023 S80KS5122GABHM023 Infineon Technologies Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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S80KS2563GABHV023 S80KS2563GABHV023 Infineon Technologies Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S80KS5122GABHB023 S80KS5122GABHB023 Infineon Technologies Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S80KS5122GABHI023 S80KS5122GABHI023 Infineon Technologies S80KS5122.pdf Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S80KS5122GABHA023 S80KS5122GABHA023 Infineon Technologies Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IDB30E60ATMA1 IDB30E60ATMA1 Infineon Technologies IDB30E60_rev2_2G.pdf?folderId=db3a304412b407950112b438d1176bab&fileId=db3a304412b407950112b438d1a06bac Description: DIODE GP 600V 52.3A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126 ns
Technology: Standard
Current - Average Rectified (Io): 52.3A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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IDP30E60XKSA1 IDP30E60XKSA1 Infineon Technologies IDP30E60_rev2_4G.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e01237a4486497bd5 Description: DIODE GEN PURP 600V 52.3A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126 ns
Technology: Standard
Current - Average Rectified (Io): 52.3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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IDW30E60AFKSA1 IDW30E60AFKSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
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AIDW30E60 Infineon Technologies Description: DIODE GEN PURP 600V 30A TO247-3
Packaging: Tube
Part Status: Active
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 Infineon Technologies Infineon-IKB20N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1338f54917 Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
на замовлення 783 шт:
термін постачання 21-31 дні (днів)
2+233.34 грн
10+145.81 грн
100+101.09 грн
500+80.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4147AZS-S465T CY8C4147AZS-S465T Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
CY8C4147AZS-S465 CY8C4147AZS-S465 Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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IRFR5410TRRPBF IRFR5410TRRPBF Infineon Technologies irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107 Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
товару немає в наявності
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TLE5045ICR100HALA1 TLE5045ICR100HALA1 Infineon Technologies Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Cut Tape (CT)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
3+114.11 грн
5+96.77 грн
10+92.26 грн
25+81.30 грн
50+77.73 грн
100+74.47 грн
500+66.80 грн
1000+64.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE5045ICR100HALA1 TLE5045ICR100HALA1 Infineon Technologies Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Tape & Box (TB)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE5012BE9000MS2GOTOBO1 TLE5012BE9000MS2GOTOBO1 Infineon Technologies TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+2138.36 грн
В кошику  од. на суму  грн.
TLE5045ICIJGR050HALA1 TLE5045ICIJGR050HALA1 Infineon Technologies Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2 Description: SPEED & CURRENT SENSORS PG-SSO-2
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: Analog Current
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TLE5045ICIJGR050HALA1 TLE5045ICIJGR050HALA1 Infineon Technologies Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2 Description: SPEED & CURRENT SENSORS PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Analog Current
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+84.93 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TLE5046ICPWM2R100HALA1 TLE5046ICPWM2R100HALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1955 шт:
термін постачання 21-31 дні (днів)
3+141.37 грн
5+120.22 грн
10+114.56 грн
25+101.19 грн
50+96.85 грн
100+92.89 грн
500+83.53 грн
1000+80.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE5046ICPWM2R100HALA1 TLE5046ICPWM2R100HALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE50451ICR075XAMA1 TLE50451ICR075XAMA1 Infineon Technologies Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
2+304.02 грн
10+192.39 грн
100+135.57 грн
500+115.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE5046ICPWM2R050HALA1 TLE5046ICPWM2R050HALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1982 шт:
термін постачання 21-31 дні (днів)
3+141.37 грн
5+120.22 грн
10+114.56 грн
25+101.19 грн
50+96.85 грн
100+92.89 грн
500+83.53 грн
1000+80.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE5046ICPWM2R050HALA1 TLE5046ICPWM2R050HALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE50461ICAKLRXAMA1 TLE50461ICAKLRXAMA1 Infineon Technologies Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
2+228.23 грн
10+143.10 грн
100+99.11 грн
500+78.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE50461ICAKLRXAMA1 TLE50461ICAKLRXAMA1 Infineon Technologies Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE5046ICAKERRHALA1 TLE5046ICAKERRHALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Cut Tape (CT)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
3+140.51 грн
5+120.22 грн
10+114.56 грн
25+101.12 грн
50+96.78 грн
100+92.84 грн
500+83.48 грн
1000+80.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE5046ICAKERRHALA1 TLE5046ICAKERRHALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE5012BE1000MS2GOTOBO1 TLE5012BE1000MS2GOTOBO1 Infineon Technologies TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
товару немає в наявності
В кошику  од. на суму  грн.
TLE5012BE5000MS2GOTOBO1 TLE5012BE5000MS2GOTOBO1 Infineon Technologies TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+2139.22 грн
В кошику  од. на суму  грн.
IPC218N06N3X7SA1 IPC218N06N3X7SA1 Infineon Technologies DS_IPC218N06N3_2_5.pdf?fileId=db3a3043442f820901442fcafed80052 Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R099P7XKSA1 IPP60R099P7XKSA1 Infineon Technologies Infineon-IPP60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1979a00e4aaa Description: MOSFET N-CH 600V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 936 шт:
термін постачання 21-31 дні (днів)
2+309.13 грн
50+150.51 грн
100+141.24 грн
500+106.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R099P6XKSA1 IPA60R099P6XKSA1 Infineon Technologies Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a Description: MOSFET N-CH 600V 37.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
1+373.00 грн
50+187.47 грн
100+170.85 грн
В кошику  од. на суму  грн.
IPP60R099C6XKSA1 IPP60R099C6XKSA1 Infineon Technologies IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e Description: MOSFET N-CH 600V 37.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
на замовлення 1056 шт:
термін постачання 21-31 дні (днів)
1+453.05 грн
50+231.75 грн
100+212.02 грн
500+167.96 грн
В кошику  од. на суму  грн.
IPP60R099C7XKSA1 IPP60R099C7XKSA1 Infineon Technologies Infineon-IPP60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d481216877004 Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPI60R099CPXKSA1 IPI60R099CPXKSA1 Infineon Technologies IPI60R099CP_rev1.0.pdf?folderId=db3a304314dca38901152838487312ae&fileId=db3a304314dca38901152853393a12bd Description: MOSFET N-CH 600V 31A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+641.25 грн
10+529.76 грн
100+441.49 грн
500+365.58 грн
В кошику  од. на суму  грн.
IPW60R099ZH Infineon Technologies Description: IPW60R099 - 600V CoolMOS N-Chann
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
CY7C024-15AXC CY7C024-15AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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D3900U45X172XPSA1 D3900U45X172XPSA1 Infineon Technologies Description: HIGH POWER THYR / DIO BG-D17226K
Packaging: Tray
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+268261.31 грн
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SGW20N60FKSA1 SGW20N60FKSA1 Infineon Technologies SGP_W20N60_Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42791a53c6a Description: IGBT NPT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
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1ED020I12FXUMA2 1ED020I12FXUMA2 Infineon Technologies 1ED020I12-F_Ver2.3_May2011.pdf Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 60ns, 60ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
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IRF300P226 IRF300P226 Infineon Technologies Infineon-IRF300P226-DS-v01_00-EN.pdf?fileId=5546d462602a9dc8016038801939199d Description: MOSFET N-CH 300V 100A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+747.70 грн
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MB3773PF-G-BND-JN-ERE1 MB3773PF-G-BND-JN-ERE1 Infineon Technologies download Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
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MB3773PF-G-BND-JN-EFE1 MB3773PF-G-BND-JN-EFE1 Infineon Technologies download Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
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MB3773PF-G-BND-JNE1 MB3773PF-G-BND-JNE1 Infineon Technologies download Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CDM10V3XTSA1 CDM10V3XTSA1 Infineon Technologies Infineon-CDM10V-3-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e13817cbd5870 Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
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CDM10V3XTSA1 CDM10V3XTSA1 Infineon Technologies Infineon-CDM10V-3-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e13817cbd5870 Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
на замовлення 2915 шт:
термін постачання 21-31 дні (днів)
10+35.77 грн
14+24.60 грн
25+22.01 грн
100+17.95 грн
250+16.67 грн
500+15.89 грн
1000+15.00 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IPW90R340C3XKSA1 IPW90R340C3XKSA1 Infineon Technologies Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087 Description: MOSFET N-CH 900V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
1+399.40 грн
30+210.13 грн
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KITXMC45RELAXLITEV1TOBO1 Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
KITXMC45RELAXLITEV1TOBO1
Виробник: Infineon Technologies
Description: RELAX LITE KIT XMC4500 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4500
Platform: Relax Lite Kit
Part Status: Active
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2111.97 грн
В кошику  од. на суму  грн.
S29AS016J70BHI040 Infineon-S29AS016J_16_Mbit_(2_M_x_8-Bit_1_M_x_16-Bit)_1.8_V_Boot_Sector_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed720655837&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration
S29AS016J70BHI040
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 1683 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+155.84 грн
10+140.07 грн
25+136.03 грн
50+124.78 грн
100+121.87 грн
338+116.78 грн
676+112.05 грн
1014+111.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB7530PBF irfs7530pbf.pdf?fileId=5546d462533600a4015364c3d98429c3
IRFB7530PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13703 pF @ 25 V
на замовлення 1406 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+305.72 грн
50+150.89 грн
100+136.98 грн
500+105.69 грн
1000+98.88 грн
Мінімальне замовлення: 2
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CY7C65217-24LTXI Infineon-CY7C65210_CY7C65217_CY7C65210A_CY7C65217A_USB_BILLBOARD_CONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece5f5d48f2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-f
CY7C65217-24LTXI
Виробник: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: I2C, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4842 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.09 грн
10+178.53 грн
25+168.74 грн
80+137.24 грн
230+130.20 грн
490+123.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C65211-24LTXIT Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_
CY7C65211-24LTXIT
Виробник: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
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CY7C65211-24LTXIT Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_
CY7C65211-24LTXIT
Виробник: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4227 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+252.07 грн
10+182.30 грн
25+167.10 грн
100+141.15 грн
250+133.68 грн
500+129.18 грн
1000+123.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S80KS5122GABHV020 S80KS5122.pdf
S80KS5122GABHV020
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 311 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+715.34 грн
10+639.97 грн
25+620.32 грн
50+568.25 грн
100+554.43 грн
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S80KS5122GABHI020 S80KS5122.pdf
S80KS5122GABHI020
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+663.40 грн
10+594.13 грн
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S80KS5122GABHB020 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
S80KS5122GABHB020
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+818.39 грн
10+732.23 грн
25+709.68 грн
50+650.04 грн
100+634.18 грн
338+606.69 грн
В кошику  од. на суму  грн.
CYT2B63BADQ0AZSGS Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b
CYT2B63BADQ0AZSGS
Виробник: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 1548 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+873.74 грн
10+658.26 грн
25+612.39 грн
80+533.83 грн
230+506.66 грн
440+493.56 грн
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CYT2B63BADQ0AZEGS Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b
CYT2B63BADQ0AZEGS
Виробник: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 1526 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+894.18 грн
10+673.68 грн
25+626.89 грн
80+546.60 грн
230+518.90 грн
440+505.54 грн
В кошику  од. на суму  грн.
CYT2B63BADQ0AZEGST Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b
CYT2B63BADQ0AZEGST
Виробник: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
товару немає в наявності
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S80KS5122GABHV023 S80KS5122.pdf
S80KS5122GABHV023
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S80KS5122GABHM023 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
S80KS5122GABHM023
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S80KS2563GABHV023 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
S80KS2563GABHV023
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S80KS5122GABHB023 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
S80KS5122GABHB023
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S80KS5122GABHI023 S80KS5122.pdf
S80KS5122GABHI023
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S80KS5122GABHA023 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
S80KS5122GABHA023
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IDB30E60ATMA1 IDB30E60_rev2_2G.pdf?folderId=db3a304412b407950112b438d1176bab&fileId=db3a304412b407950112b438d1a06bac
IDB30E60ATMA1
Виробник: Infineon Technologies
Description: DIODE GP 600V 52.3A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126 ns
Technology: Standard
Current - Average Rectified (Io): 52.3A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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IDP30E60XKSA1 IDP30E60_rev2_4G.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e01237a4486497bd5
IDP30E60XKSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 52.3A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 126 ns
Technology: Standard
Current - Average Rectified (Io): 52.3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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IDW30E60AFKSA1 Part_Number_Guide_Web.pdf
IDW30E60AFKSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
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AIDW30E60
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A TO247-3
Packaging: Tube
Part Status: Active
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IKB20N65EH5ATMA1 Infineon-IKB20N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1338f54917
IKB20N65EH5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
на замовлення 783 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+233.34 грн
10+145.81 грн
100+101.09 грн
500+80.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4147AZS-S465T
CY8C4147AZS-S465T
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
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CY8C4147AZS-S465
CY8C4147AZS-S465
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 54
Grade: Automotive
Qualification: AEC-Q100
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IRFR5410TRRPBF irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107
IRFR5410TRRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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TLE5045ICR100HALA1 Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad
TLE5045ICR100HALA1
Виробник: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Cut Tape (CT)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.11 грн
5+96.77 грн
10+92.26 грн
25+81.30 грн
50+77.73 грн
100+74.47 грн
500+66.80 грн
1000+64.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE5045ICR100HALA1 Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad
TLE5045ICR100HALA1
Виробник: Infineon Technologies
Description: SENSOR HALL EFFECT PWM SSO-2
Packaging: Tape & Box (TB)
Features: Selectable Scale, Temperature Compensated
Output Type: PWM
Axis: Single
Operating Temperature: -40°C ~ 125°C
Technology: Hall Effect
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE5012BE9000MS2GOTOBO1 TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf
TLE5012BE9000MS2GOTOBO1
Виробник: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2138.36 грн
В кошику  од. на суму  грн.
TLE5045ICIJGR050HALA1 Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2
TLE5045ICIJGR050HALA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: Analog Current
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
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TLE5045ICIJGR050HALA1 Infineon-TLE5045IC-R050-DataSheet-v01_00-EN.pdf?fileId=5546d46266f85d63016716fe2d9e15e2
TLE5045ICIJGR050HALA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Analog Current
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V, 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+84.93 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TLE5046ICPWM2R100HALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICPWM2R100HALA1
Виробник: Infineon Technologies
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.37 грн
5+120.22 грн
10+114.56 грн
25+101.19 грн
50+96.85 грн
100+92.89 грн
500+83.53 грн
1000+80.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE5046ICPWM2R100HALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICPWM2R100HALA1
Виробник: Infineon Technologies
Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE50451ICR075XAMA1 Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad
TLE50451ICR075XAMA1
Виробник: Infineon Technologies
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.02 грн
10+192.39 грн
100+135.57 грн
500+115.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE5046ICPWM2R050HALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICPWM2R050HALA1
Виробник: Infineon Technologies
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1982 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.37 грн
5+120.22 грн
10+114.56 грн
25+101.19 грн
50+96.85 грн
100+92.89 грн
500+83.53 грн
1000+80.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE5046ICPWM2R050HALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICPWM2R050HALA1
Виробник: Infineon Technologies
Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 4.25V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE50461ICAKLRXAMA1 Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad
TLE50461ICAKLRXAMA1
Виробник: Infineon Technologies
Description: SPEED SENSORS
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+228.23 грн
10+143.10 грн
100+99.11 грн
500+78.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE50461ICAKLRXAMA1 Sensor_Solutions_BR-2017.pdf?fileId=5546d4615c15da48015c5438f6c803ad
TLE50461ICAKLRXAMA1
Виробник: Infineon Technologies
Description: SPEED SENSORS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: ±25mT
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE5046ICAKERRHALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICAKERRHALA1
Виробник: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Cut Tape (CT)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+140.51 грн
5+120.22 грн
10+114.56 грн
25+101.12 грн
50+96.78 грн
100+92.84 грн
500+83.48 грн
1000+80.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE5046ICAKERRHALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICAKERRHALA1
Виробник: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE5012BE1000MS2GOTOBO1 TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf
TLE5012BE1000MS2GOTOBO1
Виробник: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
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TLE5012BE5000MS2GOTOBO1 TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf
TLE5012BE5000MS2GOTOBO1
Виробник: Infineon Technologies
Description: EVAL TLE5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLE5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2139.22 грн
В кошику  од. на суму  грн.
IPC218N06N3X7SA1 DS_IPC218N06N3_2_5.pdf?fileId=db3a3043442f820901442fcafed80052
IPC218N06N3X7SA1
Виробник: Infineon Technologies
Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
товару немає в наявності
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IPP60R099P7XKSA1 Infineon-IPP60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1979a00e4aaa
IPP60R099P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 936 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+309.13 грн
50+150.51 грн
100+141.24 грн
500+106.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R099P6XKSA1 Infineon-IPA60R099P6-DS-v02_01-EN.pdf?fileId=5546d461464245d301468f0e6251673a
IPA60R099P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+373.00 грн
50+187.47 грн
100+170.85 грн
В кошику  од. на суму  грн.
IPP60R099C6XKSA1 IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e
IPP60R099C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
на замовлення 1056 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+453.05 грн
50+231.75 грн
100+212.02 грн
500+167.96 грн
В кошику  од. на суму  грн.
IPP60R099C7XKSA1 Infineon-IPP60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d481216877004
IPP60R099C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
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IPI60R099CPXKSA1 IPI60R099CP_rev1.0.pdf?folderId=db3a304314dca38901152838487312ae&fileId=db3a304314dca38901152853393a12bd
IPI60R099CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+641.25 грн
10+529.76 грн
100+441.49 грн
500+365.58 грн
В кошику  од. на суму  грн.
IPW60R099ZH
Виробник: Infineon Technologies
Description: IPW60R099 - 600V CoolMOS N-Chann
Packaging: Bulk
Part Status: Obsolete
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CY7C024-15AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-15AXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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D3900U45X172XPSA1
D3900U45X172XPSA1
Виробник: Infineon Technologies
Description: HIGH POWER THYR / DIO BG-D17226K
Packaging: Tray
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+268261.31 грн
В кошику  од. на суму  грн.
SGW20N60FKSA1 SGP_W20N60_Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42791a53c6a
SGW20N60FKSA1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
товару немає в наявності
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1ED020I12FXUMA2 1ED020I12-F_Ver2.3_May2011.pdf
1ED020I12FXUMA2
Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 60ns, 60ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
товару немає в наявності
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IRF300P226 Infineon-IRF300P226-DS-v01_00-EN.pdf?fileId=5546d462602a9dc8016038801939199d
IRF300P226
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 100A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 45A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10030 pF @ 50 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+747.70 грн
В кошику  од. на суму  грн.
MB3773PF-G-BND-JN-ERE1 download
MB3773PF-G-BND-JN-ERE1
Виробник: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
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MB3773PF-G-BND-JN-EFE1 download
MB3773PF-G-BND-JN-EFE1
Виробник: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
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MB3773PF-G-BND-JNE1 download
MB3773PF-G-BND-JNE1
Виробник: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 50ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
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CDM10V3XTSA1 Infineon-CDM10V-3-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e13817cbd5870
CDM10V3XTSA1
Виробник: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
товару немає в наявності
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CDM10V3XTSA1 Infineon-CDM10V-3-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e13817cbd5870
CDM10V3XTSA1
Виробник: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: General Purpose
Internal Switch(s): No
Supplier Device Package: PG-SOT23-6
Dimming: Yes
Voltage - Supply (Min): 11V
Voltage - Supply (Max): 25V
Part Status: Active
на замовлення 2915 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.77 грн
14+24.60 грн
25+22.01 грн
100+17.95 грн
250+16.67 грн
500+15.89 грн
1000+15.00 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IPW90R340C3XKSA1 Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087
IPW90R340C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+399.40 грн
30+210.13 грн
В кошику  од. на суму  грн.
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