Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148582) > Сторінка 558 з 2477

Обрати Сторінку:   [  << Попередня Сторінка ]  1 247 494 553 554 555 556 557 558 559 560 561 562 563 741 988 1235 1482 1729 1976 2223 2470 2477  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IRLR7833PBF IRLR7833PBF Infineon Technologies irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3 Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IKW40N65F5FKSA1 IKW40N65F5FKSA1 Infineon Technologies DS_IKP_IKW40N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa60c5395f31 Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 1506 шт:
термін постачання 21-31 дні (днів)
1+361.30 грн
30+194.21 грн
120+160.37 грн
510+127.21 грн
1020+118.83 грн
В кошику  од. на суму  грн.
AIGW40N65H5XKSA1 AIGW40N65H5XKSA1 Infineon Technologies Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IKW40N65ES5XKSA1 IKW40N65ES5XKSA1 Infineon Technologies Infineon-IKW40N65ES5-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef20150144a968a5823 Description: IGBT TRENCH 650V 79A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
на замовлення 93 шт:
термін постачання 21-31 дні (днів)
1+386.76 грн
30+209.26 грн
В кошику  од. на суму  грн.
IKP40N65H5XKSA1 IKP40N65H5XKSA1 Infineon Technologies DS_IKP_IKW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa8ba6fb6078 Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
товару немає в наявності
В кошику  од. на суму  грн.
AIKW40N65DF5XKSA1 AIKW40N65DF5XKSA1 Infineon Technologies Infineon-AIKW40N65DF5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d081302ca7f30 Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AIKW40N65DH5XKSA1 AIKW40N65DH5XKSA1 Infineon Technologies Infineon-AIKW40N65DH5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d08130bbf7f32 Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IRFU4615PBF IRFU4615PBF Infineon Technologies irfr4615pbf.pdf?fileId=5546d462533600a40153563231ce20f4 description Description: MOSFET N-CH 150V 33A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
на замовлення 6390 шт:
термін постачання 21-31 дні (днів)
2+193.38 грн
75+85.82 грн
150+77.52 грн
525+61.65 грн
1050+56.85 грн
2025+53.01 грн
5025+51.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SBCSHIELDTLE9471TOBO1 SBCSHIELDTLE9471TOBO1 Infineon Technologies Infineon-Lite_SBC_Shield-PB-v01_00-EN.pdf?fileId=5546d46269e1c019016a2f7ee8aa76de Description: EVAL DCDC SBC SHIELD TLE9471-3ES
Packaging: Bulk
Function: CANbus
Type: Interface
Contents: Board(s)
Utilized IC / Part: MCP2515, TLE9471-3ES
Platform: Arduino
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+2974.74 грн
В кошику  од. на суму  грн.
FS100R17N3E4BOSA1 FS100R17N3E4BOSA1 Infineon Technologies Infineon-FS100R17N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043397219b60139768e85c55284 Description: IGBT MOD 1700V 100A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8748.34 грн
В кошику  од. на суму  грн.
F475R06W1E3BOMA1 F475R06W1E3BOMA1 Infineon Technologies Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8 Description: IGBT MOD 600V 100A 275W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
1+2962.80 грн
В кошику  од. на суму  грн.
IKW25T120FKSA1 IKW25T120FKSA1 Infineon Technologies IKW25T120_Rev2G_2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42899373e31 Description: IGBT NPT FS 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/560ns
Switching Energy: 4.2mJ
Test Condition: 600V, 25A, 22Ohm, 15V
Gate Charge: 155 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 190 W
товару немає в наявності
В кошику  од. на суму  грн.
BC850CWH6327XTSA1 BC850CWH6327XTSA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
IRS21844MTRPBF IRS21844MTRPBF Infineon Technologies irs21844mpbf.pdf?fileId=5546d462533600a401535676dfb027de Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+88.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRS21814MTRPBF IRS21814MTRPBF Infineon Technologies irs21814mpbf.pdf?fileId=5546d462533600a401535676c8a827d6 Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+88.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AUIRS21814STR AUIRS21814STR Infineon Technologies IRSDS19254-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRS21851SPBF IRS21851SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SPP24N60C3XKSA1 SPP24N60C3XKSA1 Infineon Technologies SPP24N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e323b4975 Description: MOSFET N-CH 650V 24.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
1+334.24 грн
50+187.09 грн
В кошику  од. на суму  грн.
CYBT-353027-EVAL CYBT-353027-EVAL Infineon Technologies download Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBT-353027-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+3725.98 грн
В кошику  од. на суму  грн.
CYBT-213043-EVAL CYBT-213043-EVAL Infineon Technologies download Description: EVAL BLE BR/EDR CYBT-213043-02
Packaging: Bulk
For Use With/Related Products: CYBT-213043-02, CYW20819
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x
Supplied Contents: Board(s), Cable(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3644.01 грн
В кошику  од. на суму  грн.
CY9BF314RPMC-G-JNE2 CY9BF314RPMC-G-JNE2 Infineon Technologies Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
1+723.39 грн
10+546.93 грн
25+509.40 грн
84+458.69 грн
В кошику  од. на суму  грн.
CY9BF464KQN-G-AVE2 CY9BF464KQN-G-AVE2 Infineon Technologies download Description: IC MCU 32BIT 288KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 33
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF514NPQC-G-JNE2 CY9BF514NPQC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF512NPMC-G-JNE2 CY9BF512NPMC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF514NPMC-G-JNE2 CY9BF514NPMC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF512RPMC-G-JNE2 CY9BF512RPMC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRFB4410ZPBF IRFB4410ZPBF Infineon Technologies irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a description Description: MOSFET N-CH 100V 97A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
на замовлення 3572 шт:
термін постачання 21-31 дні (днів)
3+148.82 грн
50+66.52 грн
100+64.53 грн
500+54.14 грн
1000+50.57 грн
2000+46.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S29GL01GS11DHV023 S29GL01GS11DHV023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512S10TFI020 S29GL512S10TFI020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
на замовлення 1074 шт:
термін постачання 21-31 дні (днів)
1+532.40 грн
10+476.74 грн
25+462.13 грн
91+414.42 грн
182+407.11 грн
В кошику  од. на суму  грн.
IPB240N03S4LR8ATMA1 IPB240N03S4LR8ATMA1 Infineon Technologies Infineon-IPB240N03S4L-R8-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3697fda0476 Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 Infineon Technologies Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914 Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
товару немає в наявності
В кошику  од. на суму  грн.
IKP20N65H5XKSA1 IKP20N65H5XKSA1 Infineon Technologies Infineon-IKP20N65H5-DS-v02_01-en.pdf?fileId=5546d461464245d30146a500cc446cf4 Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/156ns
Switching Energy: 170µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
на замовлення 453 шт:
термін постачання 21-31 дні (днів)
2+246.70 грн
50+119.29 грн
100+107.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 Infineon Technologies Infineon-IKB20N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1338f54917 Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
товару немає в наявності
В кошику  од. на суму  грн.
IRF1324PBF IRF1324PBF Infineon Technologies irf1324pbf.pdf?fileId=5546d462533600a4015355dac93318a7 Description: MOSFET N-CH 24V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
на замовлення 918 шт:
термін постачання 21-31 дні (днів)
2+233.17 грн
50+114.64 грн
100+107.67 грн
500+82.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS247ZE3062AATMA2 BTS247ZE3062AATMA2 Infineon Technologies Infineon-BTS247Z+E3062A-DS-v01_04-EN.pdf?fileId=5546d46249cd10140149f61898a21f1e&ack=t Description: MOSFET N-CH 55V 33A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
KITA2GTC3775VTFTTOBO1 KITA2GTC3775VTFTTOBO1 Infineon Technologies Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d Description: AURIX TC377 5V TFT EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Board Type: Evaluation Platform
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TFT
Part Status: Active
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+20413.31 грн
10+19612.36 грн
В кошику  од. на суму  грн.
TC377TP96F300SAALXUMA1 TC377TP96F300SAALXUMA1 Infineon Technologies 4_cip10525.pdf Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 876 шт:
термін постачання 21-31 дні (днів)
1+3107.64 грн
10+2444.46 грн
25+2307.62 грн
100+2024.46 грн
250+1957.18 грн
В кошику  од. на суму  грн.
CYBLE-222005-00 CYBLE-222005-00 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYBLE-222005-00 CYBLE-222005-00 Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
EVAL-S25HL512T EVAL-S25HL512T Infineon Technologies Infineon-SEMPER-S25HL512T-memory-module-Quick-start-guide-GettingStarted-v03_00-EN.pdf?fileId=8ac78c8c7e7124d1017e71d9d5630088 Description: SEMPER S25HL512T MEMORY MODULE E
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S25HL512T
Platform: Pmod™
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+2050.80 грн
10+1857.60 грн
В кошику  од. на суму  грн.
IGU04N60TAKMA1 IGU04N60TAKMA1 Infineon Technologies Infineon-IGU04N60T-DS-v02_00-en.pdf?fileId=db3a304341e0aed00141e47349ff51f4 Description: IGBT TRENCH 600V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 61µJ (on), 84µJ (off)
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
на замовлення 1472 шт:
термін постачання 21-31 дні (днів)
4+101.86 грн
75+43.40 грн
150+38.77 грн
525+30.21 грн
1050+27.53 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
S70GL02GP11FFIR22 S70GL02GP11FFIR22 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GP11FAIR12 S70GL02GP11FAIR12 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GP11FAIR13 S70GL02GP11FAIR13 Infineon Technologies S70GL02GP_Mar_16_2016.pdf Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
товару немає в наявності
В кошику  од. на суму  грн.
TD104N14K0FHPSA1 Infineon Technologies INFN-S-A0004146847-1.pdf?t.download=true&u=5oefqw Description: PHASE CONTROL THYRISTOR MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
3+8161.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
T930S16TFBVT Infineon Technologies INFNS14669-1.pdf?t.download=true&u=5oefqw Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
2+17864.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
T930S16TFB Infineon Technologies INFNS14669-1.pdf?t.download=true&u=5oefqw Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TT251N16KOFHPSA1 Infineon Technologies INFNS30422-1.pdf?t.download=true&u=ovmfp3 Description: TT251PhaContrThyristModule
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
2+13647.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PVG612APBF PVG612APBF Infineon Technologies pvg612a.pdf?fileId=5546d462533600a401535683ca14293a Description: SSR RELAY SPST-NO 2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
на замовлення 2937 шт:
термін постачання 21-31 дні (днів)
1+891.31 грн
10+764.34 грн
25+729.95 грн
50+661.51 грн
100+638.79 грн
250+609.94 грн
500+579.32 грн
1000+559.39 грн
В кошику  од. на суму  грн.
IDH20G65C5XKSA2 IDH20G65C5XKSA2 Infineon Technologies IDH20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06d5f79701c6 Description: DIODE SIL CARB 650V 20A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
на замовлення 599 шт:
термін постачання 21-31 дні (днів)
1+540.35 грн
50+329.91 грн
100+302.23 грн
500+254.05 грн
В кошику  од. на суму  грн.
IRF40B207 IRF40B207 Infineon Technologies irf40b207.pdf?fileId=5546d462533600a4015355e2f8fd1971 Description: MOSFET N-CH 40V 95A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 57A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
на замовлення 1630 шт:
термін постачання 21-31 дні (днів)
4+82.76 грн
50+40.97 грн
100+38.42 грн
500+29.82 грн
1000+27.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFB4610PBF IRFB4610PBF Infineon Technologies irfs4610pbf.pdf?fileId=5546d462533600a40153563a3c4921b7 description Description: MOSFET N-CH 100V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO200P03SHXUMA1 BSO200P03SHXUMA1 Infineon Technologies BSO200P03S_Rev1.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b42b596d0a5a Description: MOSFET P-CH 30V 7.4A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO207PHXUMA1 BSO207PHXUMA1 Infineon Technologies BSO207PH.pdf Description: MOSFET 2P-CH 20V 5A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 44µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
CYUSB2014-BZXCT CYUSB2014-BZXCT Infineon Technologies download Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYUSB2014-BZXIT CYUSB2014-BZXIT Infineon Technologies download Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYW20704UA2KFFB1G CYW20704UA2KFFB1G Infineon Technologies Infineon-CYW20704_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e9f96802&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.1 +EDR
Current - Receiving: 38mA
Data Rate (Max): 3Mbps
Current - Transmitting: 38mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4586 шт:
термін постачання 21-31 дні (днів)
1+365.28 грн
10+304.69 грн
25+288.33 грн
100+249.40 грн
490+228.02 грн
980+219.57 грн
1470+211.34 грн
В кошику  од. на суму  грн.
IDWD20G120C5XKSA1 IDWD20G120C5XKSA1 Infineon Technologies Infineon-IDWD20G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d55c04548c Description: DIODE SIC 1.2KV 62A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1368pF @ 1V, 1MHz
Current - Average Rectified (Io): 62A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 166 µA @ 1200 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+581.74 грн
30+374.71 грн
120+371.26 грн
В кошику  од. на суму  грн.
IPP020N06NAKSA1 IPP020N06NAKSA1 Infineon Technologies IPP020N06N_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465ce627962f5 Description: MOSFET N-CH 60V 29A/120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
на замовлення 487 шт:
термін постачання 21-31 дні (днів)
2+261.03 грн
50+151.06 грн
100+143.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TD162N16KOFHPSA2 TD162N16KOFHPSA2 Infineon Technologies Infineon-TT162N-DataSheet-v03_04-EN.pdf?fileId=db3a304412b407950112b42f789a4bb5 Description: SCR MODULE 1.6KV 260A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.6 kV
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+10599.39 грн
В кошику  од. на суму  грн.
IRLR7833PBF irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3
IRLR7833PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IKW40N65F5FKSA1 DS_IKP_IKW40N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa60c5395f31
IKW40N65F5FKSA1
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
на замовлення 1506 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+361.30 грн
30+194.21 грн
120+160.37 грн
510+127.21 грн
1020+118.83 грн
В кошику  од. на суму  грн.
AIGW40N65H5XKSA1 Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c
AIGW40N65H5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IKW40N65ES5XKSA1 Infineon-IKW40N65ES5-DS-v02_02-EN.pdf?fileId=5546d4624fb7fef20150144a968a5823
IKW40N65ES5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 79A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 79 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 230 W
на замовлення 93 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+386.76 грн
30+209.26 грн
В кошику  од. на суму  грн.
IKP40N65H5XKSA1 DS_IKP_IKW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa8ba6fb6078
IKP40N65H5XKSA1
Виробник: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
товару немає в наявності
В кошику  од. на суму  грн.
AIKW40N65DF5XKSA1 Infineon-AIKW40N65DF5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d081302ca7f30
AIKW40N65DF5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AIKW40N65DH5XKSA1 Infineon-AIKW40N65DH5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d08130bbf7f32
AIKW40N65DH5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IRFU4615PBF description irfr4615pbf.pdf?fileId=5546d462533600a40153563231ce20f4
IRFU4615PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 33A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
на замовлення 6390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.38 грн
75+85.82 грн
150+77.52 грн
525+61.65 грн
1050+56.85 грн
2025+53.01 грн
5025+51.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SBCSHIELDTLE9471TOBO1 Infineon-Lite_SBC_Shield-PB-v01_00-EN.pdf?fileId=5546d46269e1c019016a2f7ee8aa76de
SBCSHIELDTLE9471TOBO1
Виробник: Infineon Technologies
Description: EVAL DCDC SBC SHIELD TLE9471-3ES
Packaging: Bulk
Function: CANbus
Type: Interface
Contents: Board(s)
Utilized IC / Part: MCP2515, TLE9471-3ES
Platform: Arduino
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2974.74 грн
В кошику  од. на суму  грн.
FS100R17N3E4BOSA1 Infineon-FS100R17N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043397219b60139768e85c55284
FS100R17N3E4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 100A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8748.34 грн
В кошику  од. на суму  грн.
F475R06W1E3BOMA1 Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8
F475R06W1E3BOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 100A 275W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2962.80 грн
В кошику  од. на суму  грн.
IKW25T120FKSA1 IKW25T120_Rev2G_2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42899373e31
IKW25T120FKSA1
Виробник: Infineon Technologies
Description: IGBT NPT FS 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/560ns
Switching Energy: 4.2mJ
Test Condition: 600V, 25A, 22Ohm, 15V
Gate Charge: 155 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 190 W
товару немає в наявності
В кошику  од. на суму  грн.
BC850CWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC850CWH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
IRS21844MTRPBF irs21844mpbf.pdf?fileId=5546d462533600a401535676dfb027de
IRS21844MTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+88.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRS21814MTRPBF irs21814mpbf.pdf?fileId=5546d462533600a401535676c8a827d6
IRS21814MTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+88.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AUIRS21814STR IRSDS19254-1.pdf?t.download=true&u=5oefqw
AUIRS21814STR
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRS21851SPBF fundamentals-of-power-semiconductors
IRS21851SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SPP24N60C3XKSA1 SPP24N60C3_Rev.2.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e323b4975
SPP24N60C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+334.24 грн
50+187.09 грн
В кошику  од. на суму  грн.
CYBT-353027-EVAL download
CYBT-353027-EVAL
Виробник: Infineon Technologies
Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: CYBT-353027-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3725.98 грн
В кошику  од. на суму  грн.
CYBT-213043-EVAL download
CYBT-213043-EVAL
Виробник: Infineon Technologies
Description: EVAL BLE BR/EDR CYBT-213043-02
Packaging: Bulk
For Use With/Related Products: CYBT-213043-02, CYW20819
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x
Supplied Contents: Board(s), Cable(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3644.01 грн
В кошику  од. на суму  грн.
CY9BF314RPMC-G-JNE2 Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF314RPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+723.39 грн
10+546.93 грн
25+509.40 грн
84+458.69 грн
В кошику  од. на суму  грн.
CY9BF464KQN-G-AVE2 download
CY9BF464KQN-G-AVE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 33
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF514NPQC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF514NPQC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF512NPMC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF512NPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF514NPMC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF514NPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF512RPMC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF512RPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRFB4410ZPBF description irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a
IRFB4410ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 97A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
на замовлення 3572 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.82 грн
50+66.52 грн
100+64.53 грн
500+54.14 грн
1000+50.57 грн
2000+46.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S29GL01GS11DHV023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHV023
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL512S10TFI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S10TFI020
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
на замовлення 1074 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+532.40 грн
10+476.74 грн
25+462.13 грн
91+414.42 грн
182+407.11 грн
В кошику  од. на суму  грн.
IPB240N03S4LR8ATMA1 Infineon-IPB240N03S4L-R8-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3697fda0476
IPB240N03S4LR8ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IKB15N65EH5ATMA1 Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914
IKB15N65EH5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
товару немає в наявності
В кошику  од. на суму  грн.
IKP20N65H5XKSA1 Infineon-IKP20N65H5-DS-v02_01-en.pdf?fileId=5546d461464245d30146a500cc446cf4
IKP20N65H5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/156ns
Switching Energy: 170µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
на замовлення 453 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+246.70 грн
50+119.29 грн
100+107.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKB20N65EH5ATMA1 Infineon-IKB20N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1338f54917
IKB20N65EH5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 38A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 560µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 32Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
товару немає в наявності
В кошику  од. на суму  грн.
IRF1324PBF irf1324pbf.pdf?fileId=5546d462533600a4015355dac93318a7
IRF1324PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 24V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
на замовлення 918 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+233.17 грн
50+114.64 грн
100+107.67 грн
500+82.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS247ZE3062AATMA2 Infineon-BTS247Z+E3062A-DS-v01_04-EN.pdf?fileId=5546d46249cd10140149f61898a21f1e&ack=t
BTS247ZE3062AATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 33A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
KITA2GTC3775VTFTTOBO1 Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d
KITA2GTC3775VTFTTOBO1
Виробник: Infineon Technologies
Description: AURIX TC377 5V TFT EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Board Type: Evaluation Platform
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TFT
Part Status: Active
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20413.31 грн
10+19612.36 грн
В кошику  од. на суму  грн.
TC377TP96F300SAALXUMA1 4_cip10525.pdf
TC377TP96F300SAALXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 876 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3107.64 грн
10+2444.46 грн
25+2307.62 грн
100+2024.46 грн
250+1957.18 грн
В кошику  од. на суму  грн.
CYBLE-222005-00 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-222005-00
Виробник: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYBLE-222005-00 ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-222005-00
Виробник: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Cut Tape (CT)
Package / Case: Module
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Current - Transmitting: 15.6mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
EVAL-S25HL512T Infineon-SEMPER-S25HL512T-memory-module-Quick-start-guide-GettingStarted-v03_00-EN.pdf?fileId=8ac78c8c7e7124d1017e71d9d5630088
EVAL-S25HL512T
Виробник: Infineon Technologies
Description: SEMPER S25HL512T MEMORY MODULE E
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S25HL512T
Platform: Pmod™
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2050.80 грн
10+1857.60 грн
В кошику  од. на суму  грн.
IGU04N60TAKMA1 Infineon-IGU04N60T-DS-v02_00-en.pdf?fileId=db3a304341e0aed00141e47349ff51f4
IGU04N60TAKMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 61µJ (on), 84µJ (off)
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
на замовлення 1472 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.86 грн
75+43.40 грн
150+38.77 грн
525+30.21 грн
1050+27.53 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
S70GL02GP11FFIR22 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FFIR22
Виробник: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GP11FAIR12 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FAIR12
Виробник: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GP11FAIR13 S70GL02GP_Mar_16_2016.pdf
S70GL02GP11FAIR13
Виробник: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
товару немає в наявності
В кошику  од. на суму  грн.
TD104N14K0FHPSA1 INFN-S-A0004146847-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: PHASE CONTROL THYRISTOR MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 102 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+8161.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
T930S16TFBVT INFNS14669-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+17864.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
T930S16TFB INFNS14669-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: PHASE CONTROL THYRISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TT251N16KOFHPSA1 INFNS30422-1.pdf?t.download=true&u=ovmfp3
Виробник: Infineon Technologies
Description: TT251PhaContrThyristModule
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+13647.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PVG612APBF pvg612a.pdf?fileId=5546d462533600a401535683ca14293a
PVG612APBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
на замовлення 2937 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+891.31 грн
10+764.34 грн
25+729.95 грн
50+661.51 грн
100+638.79 грн
250+609.94 грн
500+579.32 грн
1000+559.39 грн
В кошику  од. на суму  грн.
IDH20G65C5XKSA2 IDH20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06d5f79701c6
IDH20G65C5XKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 20A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
на замовлення 599 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+540.35 грн
50+329.91 грн
100+302.23 грн
500+254.05 грн
В кошику  од. на суму  грн.
IRF40B207 irf40b207.pdf?fileId=5546d462533600a4015355e2f8fd1971
IRF40B207
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 95A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 57A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
на замовлення 1630 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.76 грн
50+40.97 грн
100+38.42 грн
500+29.82 грн
1000+27.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFB4610PBF description irfs4610pbf.pdf?fileId=5546d462533600a40153563a3c4921b7
IRFB4610PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO200P03SHXUMA1 BSO200P03S_Rev1.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b42b596d0a5a
BSO200P03SHXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 7.4A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO207PHXUMA1 BSO207PH.pdf
BSO207PHXUMA1
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 5A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 44µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
CYUSB2014-BZXCT download
CYUSB2014-BZXCT
Виробник: Infineon Technologies
Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYUSB2014-BZXIT download
CYUSB2014-BZXIT
Виробник: Infineon Technologies
Description: IC EZ-USB BRIDGE FX3 3.0 121BGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYW20704UA2KFFB1G Infineon-CYW20704_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e9f96802&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20704UA2KFFB1G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.1 +EDR
Current - Receiving: 38mA
Data Rate (Max): 3Mbps
Current - Transmitting: 38mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4586 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+365.28 грн
10+304.69 грн
25+288.33 грн
100+249.40 грн
490+228.02 грн
980+219.57 грн
1470+211.34 грн
В кошику  од. на суму  грн.
IDWD20G120C5XKSA1 Infineon-IDWD20G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d55c04548c
IDWD20G120C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 62A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1368pF @ 1V, 1MHz
Current - Average Rectified (Io): 62A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 166 µA @ 1200 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+581.74 грн
30+374.71 грн
120+371.26 грн
В кошику  од. на суму  грн.
IPP020N06NAKSA1 IPP020N06N_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465ce627962f5
IPP020N06NAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 29A/120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
на замовлення 487 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+261.03 грн
50+151.06 грн
100+143.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TD162N16KOFHPSA2 Infineon-TT162N-DataSheet-v03_04-EN.pdf?fileId=db3a304412b407950112b42f789a4bb5
TD162N16KOFHPSA2
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 260A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.6 kV
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10599.39 грн
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 247 494 553 554 555 556 557 558 559 560 561 562 563 741 988 1235 1482 1729 1976 2223 2470 2477  [ Наступна Сторінка >> ]