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FF650R17IE4DB2BOSA1 FF650R17IE4DB2BOSA1 Infineon Technologies Infineon-FF650R17IE4D_B2-DS-v02_01-en_de.pdf?fileId=db3a304323b87bc20123db9e238c6fec Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+38982.74 грн
В кошику  од. на суму  грн.
IPA65R380E6XKSA1 IPA65R380E6XKSA1 Infineon Technologies IPA65R380E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304328c6bd5c012912f08f1c0a3f Description: MOSFET N-CH 650V 10.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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TT500N16KOFHPSA2 TT500N16KOFHPSA2 Infineon Technologies Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+20450.72 грн
В кошику  од. на суму  грн.
CYSHM35925I-M068LTI CYSHM35925I-M068LTI Infineon Technologies Infineon-CYSHM35925I-M068LTIT-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee28c166900&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: PSOC4
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+478.28 грн
В кошику  од. на суму  грн.
IKW25N120H3FKSA1 IKW25N120H3FKSA1 Infineon Technologies Infineon-IKW25N120H3-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304340e762c80140ed6d64cf2df4 Description: IGBT TRENCH FS 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 290 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/277ns
Switching Energy: 2.65mJ
Test Condition: 600V, 25A, 23Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
на замовлення 355 шт:
термін постачання 21-31 дні (днів)
1+450.43 грн
30+247.60 грн
120+206.59 грн
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SKW25N120FKSA1 SKW25N120FKSA1 Infineon Technologies SKW25N120_Rev2_2G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427fc7f3d32 Description: IGBT NPT 1200V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
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SGW25N120FKSA1 SGW25N120FKSA1 Infineon Technologies SGW25N120_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42837853d9e Description: IGBT NPT 1200V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
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SPP06N80C3XKSA1 SPP06N80C3XKSA1 Infineon Technologies Infineon-SPP06N80C3-DS-v02_91-en.pdf?fileId=db3a304340f610c2014101afea0d5580 Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 5562 шт:
термін постачання 21-31 дні (днів)
3+124.15 грн
50+66.07 грн
100+65.11 грн
500+58.10 грн
1000+53.52 грн
2000+50.46 грн
Мінімальне замовлення: 3
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IRF1405STRRPBF IRF1405STRRPBF Infineon Technologies IRF1405%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
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BSZ0911LSATMA1 BSZ0911LSATMA1 Infineon Technologies Infineon-BSZ0911LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720eb167a17ce3 Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
5000+14.42 грн
10000+12.89 грн
25000+12.60 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 Infineon Technologies Infineon-ISC037N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a86155389 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+125.59 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 Infineon Technologies Infineon-ISC037N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a86155389 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
на замовлення 9319 шт:
термін постачання 21-31 дні (днів)
2+277.74 грн
10+188.14 грн
100+148.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC007N04LS6SCATMA1 BSC007N04LS6SCATMA1 Infineon Technologies Infineon-BSC007N04LS6SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4af65380e88 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
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BSC007N04LS6SCATMA1 BSC007N04LS6SCATMA1 Infineon Technologies Infineon-BSC007N04LS6SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4af65380e88 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
на замовлення 3970 шт:
термін постачання 21-31 дні (днів)
2+269.78 грн
10+183.15 грн
100+139.93 грн
500+113.14 грн
1000+112.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IMT65R260M1HXUMA1 IMT65R260M1HXUMA1 Infineon Technologies Infineon-IMT65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66da5d71d6 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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CY96F615RBPMC-GS-UJF4E1 CY96F615RBPMC-GS-UJF4E1 Infineon Technologies Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 160KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Obsolete
Number of I/O: 37
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IRAM136-1061A2 IRAM136-1061A2 Infineon Technologies IRAM136-1061A.pdf Description: IC MOSFET DRIVER
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 12 A
Voltage: 600 V
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CY7C1460KV25-167AXC CY7C1460KV25-167AXC Infineon Technologies Infineon-CY7C1460KV25_CY7C1462KV25_CY7C1460KVE25_CY7C1462KVE25_36-Mbit_(1_M_36_2_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf508349c1&utm_source=cypress&utm_me Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
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IHW30N110R3XKSA1 Infineon Technologies Infineon-IHW30N110R3-DataSheet-v02_01-EN.pdf?fileId=db3a304327b897500127b963455e0089 Description: IGBT TO-247-3
Packaging: Tube
Part Status: Active
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1EDN6550BXTSA1 1EDN6550BXTSA1 Infineon Technologies Infineon-1EDN6550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1ab4a7060a Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
Part Status: Active
DigiKey Programmable: Not Verified
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CYBL10563-68FLXIT CYBL10563-68FLXIT Infineon Technologies CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-XFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYBL10563-68FNXIT CYBL10563-68FNXIT Infineon Technologies CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf Description: IC RF TXRX+MCU BLUETOOTH 68UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
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CYBL10563-68FNXIT CYBL10563-68FNXIT Infineon Technologies CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf Description: IC RF TXRX+MCU BLUETOOTH 68UFBGA
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
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CYBL10161-68FNXIT CYBL10161-68FNXIT Infineon Technologies download Description: IC TRUETOUCH CAPSENSE
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 68-WLCSP (3.52x3.91)
Part Status: Active
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IPA083N10N5XKSA1 IPA083N10N5XKSA1 Infineon Technologies Infineon-IPA083N10N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae2aab965048b Description: MOSFET N-CH 100V 44A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 44A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
2+201.34 грн
10+125.60 грн
100+86.62 грн
Мінімальне замовлення: 2
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BCX5616H6327XTSA1 BCX5616H6327XTSA1 Infineon Technologies bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368 Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: AEC-Q101
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TLS4120ADJBOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLS4120D0EP
Packaging: Bulk
Voltage - Output: 3V ~ 10V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EP
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Discontinued at Digi-Key
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XMC4300F100K256AAXQMA1 XMC4300F100K256AAXQMA1 Infineon Technologies Infineon-XMC4300-DS-v01_00-EN.pdf?fileId=5546d462525dbac40152abc34fde16d8 Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 73
DigiKey Programmable: Not Verified
на замовлення 899 шт:
термін постачання 21-31 дні (днів)
1+1433.25 грн
10+1102.22 грн
90+961.33 грн
180+874.77 грн
270+861.05 грн
540+840.92 грн
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WLC1150-68LQXQ WLC1150-68LQXQ Infineon Technologies Infineon-WLC1150_Wireless_charging_IC_WLC_Transmitter_50W_with_integrated_USB_Type-C_PD_controller-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701862db6f63d6dc6 Description: WLC IC
Packaging: Tube
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
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WLC1150-68LQXQT WLC1150-68LQXQT Infineon Technologies Infineon-WLC1150_Wireless_charging_IC_WLC_Transmitter_50W_with_integrated_USB_Type-C_PD_controller-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701862db6f63d6dc6 Description: WLC IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+256.07 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
WLC1150-68LQXQT WLC1150-68LQXQT Infineon Technologies Infineon-WLC1150_Wireless_charging_IC_WLC_Transmitter_50W_with_integrated_USB_Type-C_PD_controller-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701862db6f63d6dc6 Description: WLC IC
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+481.46 грн
10+401.71 грн
25+380.13 грн
100+328.94 грн
250+312.27 грн
500+300.51 грн
1000+284.69 грн
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BSZ22DN20NS3G BSZ22DN20NS3G Infineon Technologies INFNS16250-1.pdf?t.download=true&u=5oefqw Description: BSZ22DN20 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
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IPP70N12S311AKSA1 IPP70N12S311AKSA1 Infineon Technologies Infineon-IPP_B_I70N12S3-11-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf9c67f7fff Description: MOSFET N-CHANNEL_100+
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
на замовлення 280 шт:
термін постачання 21-31 дні (днів)
2+208.50 грн
50+112.91 грн
100+102.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP70N12S3L12AKSA1 IPP70N12S3L12AKSA1 Infineon Technologies IPx70N12S3L-12.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Qualification: AEC-Q101
на замовлення 39177 шт:
термін постачання 21-31 дні (днів)
321+71.32 грн
Мінімальне замовлення: 321
В кошику  од. на суму  грн.
IPP70N12S3L12AKSA1 IPP70N12S3L12AKSA1 Infineon Technologies IPx70N12S3L-12.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Qualification: AEC-Q101
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XE167FH200F100LABFXUMA1 XE167FH200F100LABFXUMA1 Infineon Technologies XE167XH_v1.3_2011-007.pdf Description: IC MCU 16BIT 1.56MB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.56MB (1.56M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Not For New Designs
Number of I/O: 118
DigiKey Programmable: Not Verified
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S25FL128SDSMFN003 S25FL128SDSMFN003 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
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TDA387410000AUMA1 Infineon Technologies Description: IC REG
Packaging: Tape & Reel (TR)
Part Status: Active
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PVI1050NPBF PVI1050NPBF Infineon Technologies Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca description Description: OPTOISO 2.5KV 2CH PHVOLT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Part Status: Active
Number of Channels: 2
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BTS710404ESPXUMA1 BTS710404ESPXUMA1 Infineon Technologies Infineon-BTS71040-4ESP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837a74bc4730f8 Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-42
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+112.32 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BTS710404ESPXUMA1 BTS710404ESPXUMA1 Infineon Technologies Infineon-BTS71040-4ESP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837a74bc4730f8 Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-42
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 5094 шт:
термін постачання 21-31 дні (днів)
2+213.28 грн
10+153.96 грн
25+140.91 грн
100+118.84 грн
250+112.45 грн
500+108.59 грн
1000+103.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS700121ESPEVALBRDTOBO1 BTS700121ESPEVALBRDTOBO1 Infineon Technologies Description: BTS70012-1ESP EVAL BOARD
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70012-1ESP
Supplied Contents: Board(s)
Primary Attributes: 3.1V ~ 28V Operating Voltage
Embedded: No
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+7370.79 грн
В кошику  од. на суму  грн.
IKA06N60TXKSA1 IKA06N60TXKSA1 Infineon Technologies IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
3+153.59 грн
50+71.90 грн
100+64.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPW60R040C7XKSA1 IPW60R040C7XKSA1 Infineon Technologies Infineon-IPW60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c6ece273fe9 Description: MOSFET N-CH 600V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
1+842.76 грн
30+459.80 грн
120+414.45 грн
510+377.00 грн
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CYPD3125-40LQXIT CYPD3125-40LQXIT Infineon Technologies download Description: IC USB TYPE C CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+167.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CYPD3125-40LQXIT CYPD3125-40LQXIT Infineon Technologies download Description: IC USB TYPE C CONTROL
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 4061 шт:
термін постачання 21-31 дні (днів)
2+305.59 грн
10+223.46 грн
25+205.68 грн
100+174.64 грн
250+165.89 грн
500+160.61 грн
1000+153.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DD170N16SHPSA1 DD170N16SHPSA1 Infineon Technologies Infineon-DD170N16S-DS-v03_02-EN.pdf?fileId=5546d46148a8bbb90148d04009e82de2 Description: DIODE MOD GP 1600V 165A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: 135°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 9 mA @ 1600 V
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XMC4400F64F512BAXQMA1 XMC4400F64F512BAXQMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Description: IC MCU 32BIT 512KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-19
Part Status: Active
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 2628 шт:
термін постачання 21-31 дні (днів)
1+658.13 грн
10+495.59 грн
25+461.09 грн
160+413.07 грн
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CY14ME064Q2A-SXQT CY14ME064Q2A-SXQT Infineon Technologies download Description: IC NVSRAM 64KBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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CY8C4245AZI-M443 CY8C4245AZI-M443 Infineon Technologies Infineon-PSoC_4_PSoC_4200M_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee45b436afc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4126AZI-M445 CY8C4126AZI-M445 Infineon Technologies Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
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CY8C4146LQI-S432 CY8C4146LQI-S432 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
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ICE3AR0680JZXKLA1 ICE3AR0680JZXKLA1 Infineon Technologies Infineon-ICE3AR0680JZ-DS-v02_01-en.pdf?fileId=db3a3043284aacd801288a464df32ad6 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 82 W
на замовлення 4834 шт:
термін постачання 21-31 дні (днів)
3+156.77 грн
10+112.65 грн
50+97.11 грн
100+86.61 грн
250+81.83 грн
500+79.03 грн
Мінімальне замовлення: 3
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CY91F526LKCPMC-GSE2 CY91F526LKCPMC-GSE2 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Last Time Buy
Number of I/O: 152
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CY91F526LSBPMC-GSE1 CY91F526LSBPMC-GSE1 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Last Time Buy
Number of I/O: 152
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CY91F528USDPMC-GSE2 CY91F528USDPMC-GSE2 Infineon Technologies download Description: IC MCU 32B 2.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Last Time Buy
Number of I/O: 147
DigiKey Programmable: Not Verified
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CY91F528UWCEQ-GSE2 CY91F528UWCEQ-GSE2 Infineon Technologies download Description: IC MCU 32BIT 2.0625MB 176TEQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Part Status: Last Time Buy
Number of I/O: 147
DigiKey Programmable: Not Verified
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CY91F526LWCPMC-GSE2 CY91F526LWCPMC-GSE2 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Obsolete
Number of I/O: 152
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CY91F526LSBPMC-GSE2 CY91F526LSBPMC-GSE2 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Obsolete
Number of I/O: 152
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IGP15N60TXKSA1 IGP15N60TXKSA1 Infineon Technologies IGP15N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b84fabee78ad Description: IGBT TRENCH FS 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
2+161.55 грн
50+75.44 грн
100+67.64 грн
500+50.62 грн
Мінімальне замовлення: 2
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FF650R17IE4DB2BOSA1 Infineon-FF650R17IE4D_B2-DS-v02_01-en_de.pdf?fileId=db3a304323b87bc20123db9e238c6fec
FF650R17IE4DB2BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+38982.74 грн
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IPA65R380E6XKSA1 IPA65R380E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304328c6bd5c012912f08f1c0a3f
IPA65R380E6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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TT500N16KOFHPSA2 Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
TT500N16KOFHPSA2
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20450.72 грн
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CYSHM35925I-M068LTI Infineon-CYSHM35925I-M068LTIT-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee28c166900&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYSHM35925I-M068LTI
Виробник: Infineon Technologies
Description: PSOC4
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+478.28 грн
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IKW25N120H3FKSA1 Infineon-IKW25N120H3-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304340e762c80140ed6d64cf2df4
IKW25N120H3FKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 290 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/277ns
Switching Energy: 2.65mJ
Test Condition: 600V, 25A, 23Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
на замовлення 355 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+450.43 грн
30+247.60 грн
120+206.59 грн
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SKW25N120FKSA1 SKW25N120_Rev2_2G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b427fc7f3d32
SKW25N120FKSA1
Виробник: Infineon Technologies
Description: IGBT NPT 1200V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
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SGW25N120FKSA1 SGW25N120_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42837853d9e
SGW25N120FKSA1
Виробник: Infineon Technologies
Description: IGBT NPT 1200V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/730ns
Switching Energy: 3.7mJ
Test Condition: 800V, 25A, 22Ohm, 15V
Gate Charge: 225 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 313 W
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SPP06N80C3XKSA1 Infineon-SPP06N80C3-DS-v02_91-en.pdf?fileId=db3a304340f610c2014101afea0d5580
SPP06N80C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 5562 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.15 грн
50+66.07 грн
100+65.11 грн
500+58.10 грн
1000+53.52 грн
2000+50.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF1405STRRPBF IRF1405%28S%2CL%29PbF.pdf
IRF1405STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 131A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
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BSZ0911LSATMA1 Infineon-BSZ0911LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720eb167a17ce3
BSZ0911LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+14.42 грн
10000+12.89 грн
25000+12.60 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC037N12NM6ATMA1 Infineon-ISC037N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a86155389
ISC037N12NM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+125.59 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC037N12NM6ATMA1 Infineon-ISC037N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a86155389
ISC037N12NM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 111µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 60 V
на замовлення 9319 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+277.74 грн
10+188.14 грн
100+148.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC007N04LS6SCATMA1 Infineon-BSC007N04LS6SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4af65380e88
BSC007N04LS6SCATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
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BSC007N04LS6SCATMA1 Infineon-BSC007N04LS6SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4af65380e88
BSC007N04LS6SCATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
на замовлення 3970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+269.78 грн
10+183.15 грн
100+139.93 грн
500+113.14 грн
1000+112.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IMT65R260M1HXUMA1 Infineon-IMT65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66da5d71d6
IMT65R260M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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CY96F615RBPMC-GS-UJF4E1 Infineon-CY96610_SERIES_F2MC-16FX_16_BIT_PROPRIETARY_MICROCONTROLLER-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edae3195d8d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F615RBPMC-GS-UJF4E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 160KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Obsolete
Number of I/O: 37
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IRAM136-1061A2 IRAM136-1061A.pdf
IRAM136-1061A2
Виробник: Infineon Technologies
Description: IC MOSFET DRIVER
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 12 A
Voltage: 600 V
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CY7C1460KV25-167AXC Infineon-CY7C1460KV25_CY7C1462KV25_CY7C1460KVE25_CY7C1462KVE25_36-Mbit_(1_M_36_2_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf508349c1&utm_source=cypress&utm_me
CY7C1460KV25-167AXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
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IHW30N110R3XKSA1 Infineon-IHW30N110R3-DataSheet-v02_01-EN.pdf?fileId=db3a304327b897500127b963455e0089
Виробник: Infineon Technologies
Description: IGBT TO-247-3
Packaging: Tube
Part Status: Active
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1EDN6550BXTSA1 Infineon-1EDN6550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1ab4a7060a
1EDN6550BXTSA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
Part Status: Active
DigiKey Programmable: Not Verified
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CYBL10563-68FLXIT CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf
CYBL10563-68FLXIT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-XFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYBL10563-68FNXIT CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf
CYBL10563-68FNXIT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 68UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
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CYBL10563-68FNXIT CYBL10X6X_Family_Datasheet_RevL_3-23-17.pdf
CYBL10563-68FNXIT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 68UFBGA
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -89dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
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CYBL10161-68FNXIT download
CYBL10161-68FNXIT
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 68-WLCSP (3.52x3.91)
Part Status: Active
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IPA083N10N5XKSA1 Infineon-IPA083N10N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae2aab965048b
IPA083N10N5XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 44A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 44A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+201.34 грн
10+125.60 грн
100+86.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCX5616H6327XTSA1 bcx54_bcx55_bcx56.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589d20fda0368
BCX5616H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: AEC-Q101
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TLS4120ADJBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS4120D0EP
Packaging: Bulk
Voltage - Output: 3V ~ 10V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EP
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Discontinued at Digi-Key
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XMC4300F100K256AAXQMA1 Infineon-XMC4300-DS-v01_00-EN.pdf?fileId=5546d462525dbac40152abc34fde16d8
XMC4300F100K256AAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 73
DigiKey Programmable: Not Verified
на замовлення 899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1433.25 грн
10+1102.22 грн
90+961.33 грн
180+874.77 грн
270+861.05 грн
540+840.92 грн
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WLC1150-68LQXQ Infineon-WLC1150_Wireless_charging_IC_WLC_Transmitter_50W_with_integrated_USB_Type-C_PD_controller-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701862db6f63d6dc6
WLC1150-68LQXQ
Виробник: Infineon Technologies
Description: WLC IC
Packaging: Tube
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
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WLC1150-68LQXQT Infineon-WLC1150_Wireless_charging_IC_WLC_Transmitter_50W_with_integrated_USB_Type-C_PD_controller-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701862db6f63d6dc6
WLC1150-68LQXQT
Виробник: Infineon Technologies
Description: WLC IC
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+256.07 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
WLC1150-68LQXQT Infineon-WLC1150_Wireless_charging_IC_WLC_Transmitter_50W_with_integrated_USB_Type-C_PD_controller-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701862db6f63d6dc6
WLC1150-68LQXQT
Виробник: Infineon Technologies
Description: WLC IC
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 87mA
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+481.46 грн
10+401.71 грн
25+380.13 грн
100+328.94 грн
250+312.27 грн
500+300.51 грн
1000+284.69 грн
В кошику  од. на суму  грн.
BSZ22DN20NS3G INFNS16250-1.pdf?t.download=true&u=5oefqw
BSZ22DN20NS3G
Виробник: Infineon Technologies
Description: BSZ22DN20 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
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IPP70N12S311AKSA1 Infineon-IPP_B_I70N12S3-11-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf9c67f7fff
IPP70N12S311AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
на замовлення 280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+208.50 грн
50+112.91 грн
100+102.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP70N12S3L12AKSA1 IPx70N12S3L-12.pdf
IPP70N12S3L12AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Qualification: AEC-Q101
на замовлення 39177 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
321+71.32 грн
Мінімальне замовлення: 321
В кошику  од. на суму  грн.
IPP70N12S3L12AKSA1 IPx70N12S3L-12.pdf
IPP70N12S3L12AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Qualification: AEC-Q101
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XE167FH200F100LABFXUMA1 XE167XH_v1.3_2011-007.pdf
XE167FH200F100LABFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 1.56MB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.56MB (1.56M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Not For New Designs
Number of I/O: 118
DigiKey Programmable: Not Verified
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S25FL128SDSMFN003 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDSMFN003
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
товару немає в наявності
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TDA387410000AUMA1
Виробник: Infineon Technologies
Description: IC REG
Packaging: Tape & Reel (TR)
Part Status: Active
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PVI1050NPBF description Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NPBF
Виробник: Infineon Technologies
Description: OPTOISO 2.5KV 2CH PHVOLT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Part Status: Active
Number of Channels: 2
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BTS710404ESPXUMA1 Infineon-BTS71040-4ESP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837a74bc4730f8
BTS710404ESPXUMA1
Виробник: Infineon Technologies
Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-42
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+112.32 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BTS710404ESPXUMA1 Infineon-BTS71040-4ESP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837a74bc4730f8
BTS710404ESPXUMA1
Виробник: Infineon Technologies
Description: SPOC PG-TSDSO-24
Features: Load Discharge, PWM Input, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: PWM, SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 3A
Ratio - Input:Output: 1:4
Supplier Device Package: PG-TSDSO-24-42
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 5094 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+213.28 грн
10+153.96 грн
25+140.91 грн
100+118.84 грн
250+112.45 грн
500+108.59 грн
1000+103.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS700121ESPEVALBRDTOBO1
BTS700121ESPEVALBRDTOBO1
Виробник: Infineon Technologies
Description: BTS70012-1ESP EVAL BOARD
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70012-1ESP
Supplied Contents: Board(s)
Primary Attributes: 3.1V ~ 28V Operating Voltage
Embedded: No
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7370.79 грн
В кошику  од. на суму  грн.
IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
IKA06N60TXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.59 грн
50+71.90 грн
100+64.46 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPW60R040C7XKSA1 Infineon-IPW60R040C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c6ece273fe9
IPW60R040C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+842.76 грн
30+459.80 грн
120+414.45 грн
510+377.00 грн
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CYPD3125-40LQXIT download
CYPD3125-40LQXIT
Виробник: Infineon Technologies
Description: IC USB TYPE C CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+167.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CYPD3125-40LQXIT download
CYPD3125-40LQXIT
Виробник: Infineon Technologies
Description: IC USB TYPE C CONTROL
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 4061 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+305.59 грн
10+223.46 грн
25+205.68 грн
100+174.64 грн
250+165.89 грн
500+160.61 грн
1000+153.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DD170N16SHPSA1 Infineon-DD170N16S-DS-v03_02-EN.pdf?fileId=5546d46148a8bbb90148d04009e82de2
DD170N16SHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 1600V 165A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: 135°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 9 mA @ 1600 V
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XMC4400F64F512BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
XMC4400F64F512BAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-19
Part Status: Active
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 2628 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+658.13 грн
10+495.59 грн
25+461.09 грн
160+413.07 грн
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CY14ME064Q2A-SXQT download
CY14ME064Q2A-SXQT
Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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CY8C4245AZI-M443 Infineon-PSoC_4_PSoC_4200M_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee45b436afc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
CY8C4245AZI-M443
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4126AZI-M445 Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4126AZI-M445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
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CY8C4146LQI-S432 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4146LQI-S432
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
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ICE3AR0680JZXKLA1 Infineon-ICE3AR0680JZ-DS-v02_01-en.pdf?fileId=db3a3043284aacd801288a464df32ad6
ICE3AR0680JZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 82 W
на замовлення 4834 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+156.77 грн
10+112.65 грн
50+97.11 грн
100+86.61 грн
250+81.83 грн
500+79.03 грн
Мінімальне замовлення: 3
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CY91F526LKCPMC-GSE2 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526LKCPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Last Time Buy
Number of I/O: 152
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CY91F526LSBPMC-GSE1 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526LSBPMC-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Last Time Buy
Number of I/O: 152
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CY91F528USDPMC-GSE2 download
CY91F528USDPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Last Time Buy
Number of I/O: 147
DigiKey Programmable: Not Verified
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CY91F528UWCEQ-GSE2 download
CY91F528UWCEQ-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.0625MB 176TEQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Part Status: Last Time Buy
Number of I/O: 147
DigiKey Programmable: Not Verified
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CY91F526LWCPMC-GSE2 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526LWCPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Obsolete
Number of I/O: 152
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CY91F526LSBPMC-GSE2 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526LSBPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Obsolete
Number of I/O: 152
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IGP15N60TXKSA1 IGP15N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b84fabee78ad
IGP15N60TXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+161.55 грн
50+75.44 грн
100+67.64 грн
500+50.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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