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FF450R12ME4BDLA1 Infineon Technologies Description: FF450R12 - IGBT Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товару немає в наявності
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FF300R17KE3HDLA1 Infineon Technologies Description: MEDIUM POWER 62MM
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 404 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
товару немає в наявності
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FT150R12KE3GB4BDLA1 Infineon Technologies Description: IGBT MOD 1200V 200A 700W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
товару немає в наявності
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BSM100GD60DLCBDLA1 Infineon Technologies Description: IGBT MOD 600V 130A 430W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
товару немає в наявності
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D841S45TS01XDLA1 D841S45TS01XDLA1 Infineon Technologies Description: DIODE GP 4.5KV 1080A D7514-1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1080A
Supplier Device Package: BG-D7514-1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 2500 A
Current - Reverse Leakage @ Vr: 140 mA @ 4500 V
товару немає в наявності
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DF450R17N2E4PB11BDLA1 Infineon Technologies Description: MODULE
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
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IPW60R045CPFKSA1 IPW60R045CPFKSA1 Infineon Technologies IPW60R045CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d8e55489b Description: MOSFET N-CH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
на замовлення 1681 шт:
термін постачання 21-31 дні (днів)
1+1057.46 грн
30+629.38 грн
120+591.18 грн
В кошику  од. на суму  грн.
IPW60R037P7XKSA1 IPW60R037P7XKSA1 Infineon Technologies Infineon-IPW60R037P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bb7bab83ca7 Description: MOSFET N-CH 650V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)
1+680.37 грн
30+333.42 грн
120+332.69 грн
510+303.55 грн
В кошику  од. на суму  грн.
IPW60R125C6FKSA1 IPW60R125C6FKSA1 Infineon Technologies Infineon-IPx60R125C6-DS-v02_03-EN.pdf?fileId=db3a30432313ff5e01235b1ae8fc4910 Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
1+401.71 грн
30+234.77 грн
120+206.20 грн
В кошику  од. на суму  грн.
IPW60R031CFD7XKSA1 IPW60R031CFD7XKSA1 Infineon Technologies Infineon-IPW60R031CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea44f315531e2 Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
на замовлення 202 шт:
термін постачання 21-31 дні (днів)
1+823.27 грн
30+473.45 грн
120+403.41 грн
В кошику  од. на суму  грн.
IPW60R017C7XKSA1 IPW60R017C7XKSA1 Infineon Technologies Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8 Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
1+1440.12 грн
30+958.85 грн
В кошику  од. на суму  грн.
IPW60R070P6XKSA1 IPW60R070P6XKSA1 Infineon Technologies Infineon-IPW60R070P6-DS-v02_00-en.pdf?fileId=5546d461464245d3014694ab3f43692e Description: MOSFET N-CH 600V 53.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
на замовлення 1859 шт:
термін постачання 21-31 дні (днів)
1+508.88 грн
30+239.87 грн
120+238.87 грн
510+211.23 грн
В кошику  од. на суму  грн.
IPW60R170CFD7XKSA1 IPW60R170CFD7XKSA1 Infineon Technologies Infineon-IPW60R170CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea46190b731e6 Description: MOSFET N-CH 650V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
1+321.53 грн
10+205.11 грн
100+145.42 грн
В кошику  од. на суму  грн.
IPW60R055CFD7XKSA1 IPW60R055CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: MOSFET N-CH 600V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
на замовлення 73 шт:
термін постачання 21-31 дні (днів)
1+593.04 грн
30+332.55 грн
В кошику  од. на суму  грн.
IPW60R090CFD7XKSA1 IPW60R090CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
на замовлення 201 шт:
термін постачання 21-31 дні (днів)
1+418.38 грн
30+226.21 грн
120+197.30 грн
В кошику  од. на суму  грн.
IPW60R045CPAFKSA1 IPW60R045CPAFKSA1 Infineon Technologies Infineon-IPW60R045CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee38caa259f4 Description: MOSFET N-CH 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1088 шт:
термін постачання 21-31 дні (днів)
1+1139.24 грн
30+678.71 грн
120+608.23 грн
В кошику  од. на суму  грн.
IPW60R125CFD7XKSA1 IPW60R125CFD7XKSA1 Infineon Technologies Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2 Description: MOSFET N-CH 600V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
1+389.01 грн
30+210.95 грн
В кошику  од. на суму  грн.
IPW60R037CSFDXKSA1 IPW60R037CSFDXKSA1 Infineon Technologies Infineon-IPW60R037CSFD-DS-v02_00-EN.pdf?fileId=5546d46268554f4a016894b0464868d4 Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
1+770.87 грн
30+440.68 грн
В кошику  од. на суму  грн.
IPW60R040CFD7XKSA1 IPW60R040CFD7XKSA1 Infineon Technologies Infineon-IPW60R040CFD7-DS-v02_01-EN.pdf?fileId=5546d46261ff5777016200300a8a2c0e Description: MOSFET N-CH 600V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+696.24 грн
В кошику  од. на суму  грн.
IPW60R080P7XKSA1 IPW60R080P7XKSA1 Infineon Technologies Infineon-IPW60R080P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accfab2a0026a Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
1+429.50 грн
50+217.88 грн
100+198.97 грн
500+155.67 грн
В кошику  од. на суму  грн.
IPW60R105CFD7XKSA1 IPW60R105CFD7XKSA1 Infineon Technologies Infineon-IPW60R105CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633f162a544e05 Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+419.18 грн
В кошику  од. на суму  грн.
IPW60R099P7XKSA1 IPW60R099P7XKSA1 Infineon Technologies Infineon-IPW60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1f57c16d03d0 Description: MOSFET N-CH 600V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 436 шт:
термін постачання 21-31 дні (днів)
1+337.40 грн
30+183.25 грн
120+170.25 грн
В кошику  од. на суму  грн.
IPW60R145CFD7XKSA1 IPW60R145CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: MOSFET HIGH POWER
Packaging: Tube
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+346.14 грн
В кошику  од. на суму  грн.
IPW60R070C6FKSA1 IPW60R070C6FKSA1 Infineon Technologies IPW60R070C6_V2_1.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432313ff5e01232862aa644ac5 Description: MOSFET N-CH 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
1+632.73 грн
30+370.96 грн
120+333.18 грн
В кошику  од. на суму  грн.
IPW60R099CPFKSA1 IPW60R099CPFKSA1 Infineon Technologies IPW60R099CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca4c24745 Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+544.61 грн
30+324.14 грн
120+296.46 грн
В кошику  од. на суму  грн.
IPW60R099C7XKSA1 IPW60R099C7XKSA1 Infineon Technologies Infineon-IPW60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c8a42de3ffe Description: MOSFET N-CH 600V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
товару немає в наявності
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IPW60R070CFD7XKSA1 IPW60R070CFD7XKSA1 Infineon Technologies Infineon-IPW60R070CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea4617c8c31e4 Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
на замовлення 1410 шт:
термін постачання 21-31 дні (днів)
1+508.88 грн
30+280.97 грн
120+235.04 грн
510+193.39 грн
В кошику  од. на суму  грн.
S6BP203A8FST2B000 S6BP203A8FST2B000 Infineon Technologies Description: IC REG BCK-BST 3.3V 2.4A 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S6BP203A8FST2B000 S6BP203A8FST2B000 Infineon Technologies Description: IC REG BCK-BST 3.3V 2.4A 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
на замовлення 3964 шт:
термін постачання 21-31 дні (днів)
1+630.35 грн
10+548.29 грн
25+522.79 грн
100+426.00 грн
250+406.86 грн
500+370.96 грн
1000+317.79 грн
В кошику  од. на суму  грн.
MB39C006APN-G-AMEFE1 MB39C006APN-G-AMEFE1 Infineon Technologies Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MB39C006APN-G-AMEFE1 MB39C006APN-G-AMEFE1 Infineon Technologies Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
3+149.25 грн
10+102.21 грн
25+91.89 грн
100+75.55 грн
250+70.45 грн
500+67.38 грн
1000+63.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MB39C014PN-G-K1EFE1 MB39C014PN-G-K1EFE1 Infineon Technologies Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
MB39C014PN-G-K1EFE1 MB39C014PN-G-K1EFE1 Infineon Technologies Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
DDB6U85N16LHOSA1 DDB6U85N16LHOSA1 Infineon Technologies Infineon-DDB6U85N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43147c453fb Description: DIODE MODULE GP 1600V AGISOPACK1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: AG-ISOPACK-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+12133.85 грн
В кошику  од. на суму  грн.
DDB6U215N16LHOSA1 DDB6U215N16LHOSA1 Infineon Technologies Infineon-DDB6U215N16L-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b431505f5407 Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+12849.94 грн
В кошику  од. на суму  грн.
DDB6U104N18RRBOSA1 Infineon Technologies Infineon+-+Brochure+-+Solutions+for+Wind+Energy+Systems.pdf?fileId=db3a30433f9a93b7013f9f2973c01ed6 Description: LOW POWER ECONO
Packaging: Bulk
Part Status: Active
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
5+5036.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DDB6U134N16RRB80BPSA1 DDB6U134N16RRB80BPSA1 Infineon Technologies Infineon-DDB6U134N16RR-DS-v01_01-de.pdf?fileId=db3a304412b407950112b433eac35e2a Description: LOW POWER ECONO AG-ECONO2B-8231
Packaging: Tray
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+7145.03 грн
В кошику  од. на суму  грн.
DDB6U50N22W1RPB11BPSA1 DDB6U50N22W1RPB11BPSA1 Infineon Technologies Infineon-DDB6U50N22W1RP_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c850f4bee018582bb8f2e1958 Description: EASY BRIDGE MODULE
Packaging: Tray
Part Status: Active
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+3347.05 грн
10+2872.03 грн
30+2700.94 грн
В кошику  од. на суму  грн.
DDB6U75N16W1RBOMA1 DDB6U75N16W1RBOMA1 Infineon Technologies Infineon-DDB6U75N16W1R-DS-v02_00-en_de.pdf?fileId=db3a30432239cccd0122f436495e5657 Description: IGBT MOD 1200V 69A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+5003.11 грн
В кошику  од. на суму  грн.
DDB6U180N16RRPB11BPSA1 DDB6U180N16RRPB11BPSA1 Infineon Technologies Infineon-DDB6U180N16RR_B11-DS-v03_00-EN.pdf?fileId=5546d462518ffd8501524095699c70bc Description: LOW POWER ECONO AG-ECONO2B-8111
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+8887.62 грн
В кошику  од. на суму  грн.
DDB6U25N16VRBOMA1 Infineon Technologies EUPCS02448-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 86 W
Current - Collector Cutoff (Max): 1 mA
товару немає в наявності
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DDB6U180N16RRPB37BPSA1 DDB6U180N16RRPB37BPSA1 Infineon Technologies Infineon-DDB6U180N16RRP_B37-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d7f3f7bd50895 Description: BRIDGE RECT 3P 1.6KV 50A ECONO2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2-7
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+12116.38 грн
В кошику  од. на суму  грн.
DDB6U180N16RRBPSA1 Infineon Technologies Description: IGBT MODULE
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
DDB6U134N16RRB38BPSA1 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 70A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
товару немає в наявності
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DDB6U75N16W1RB11BOMA1 DDB6U75N16W1RB11BOMA1 Infineon Technologies Infineon-DDB6U75N16W1R_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af124a1255e01 Description: IGBT MOD 1200V 69A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
товару немає в наявності
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DDB6U104N16RRPB37BPSA1 DDB6U104N16RRPB37BPSA1 Infineon Technologies Infineon-DDB6U104N16RRP_B37-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5745f6760280 Description: BRIDGE RECT 3P 1.6KV 35A ECONO2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2-7
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF518TPMC-GK7E1 CY9BF518TPMC-GK7E1 Infineon Technologies Infineon-CY9B510T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edeaf65639f Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
1+907.42 грн
10+803.10 грн
40+769.82 грн
80+636.53 грн
240+605.29 грн
440+566.24 грн
В кошику  од. на суму  грн.
CY9BF518TBGL-GK7E1 CY9BF518TBGL-GK7E1 Infineon Technologies Infineon-CY9B510T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edeaf65639f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
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CY9BF517TBGL-GK7E1 CY9BF517TBGL-GK7E1 Infineon Technologies Infineon-CY9B510T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edeaf65639f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
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CY9BF515RPMC-G-JNE2 CY9BF515RPMC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 416KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
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CY9BF516NPQC-G-JNE2 CY9BF516NPQC-G-JNE2 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 512KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
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BC856SH6327XTSA1 BC856SH6327XTSA1 Infineon Technologies bc856s_bc856u_bc857s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a3156401d8 Description: TRANS 2PNP 65V 0.1A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
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IRLU3110ZPBF IRLU3110ZPBF Infineon Technologies irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a description Description: MOSFET N-CH 100V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
2+183.39 грн
75+81.29 грн
150+73.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCV47E6433HTMA1 BCV47E6433HTMA1 Infineon Technologies bcv27_bcv47.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445cf7c3b0188 Description: TRANS NPN DARL 60V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
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T2080NXN8MQB Infineon Technologies Description: T2080 - QorIQ, 64b Power Arch, 8
Packaging: Bulk
Part Status: Active
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IPTG063N15NM5ATMA1 IPTG063N15NM5ATMA1 Infineon Technologies Infineon-IPTG063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d89143913ebf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 163µA
Supplier Device Package: PG-HSOG-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V
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IPTG063N15NM5ATMA1 IPTG063N15NM5ATMA1 Infineon Technologies Infineon-IPTG063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d89143913ebf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 163µA
Supplier Device Package: PG-HSOG-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
1+385.83 грн
10+276.44 грн
В кошику  од. на суму  грн.
IPP60R190E6XKSA1 IPP60R190E6XKSA1 Infineon Technologies IPP60R190E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801286cb864242943 Description: MOSFET N-CH 600V 20.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
на замовлення 1870 шт:
термін постачання 21-31 дні (днів)
2+253.25 грн
50+122.87 грн
100+111.16 грн
500+85.05 грн
1000+78.86 грн
Мінімальне замовлення: 2
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IRF3710ZSPBF IRF3710ZSPBF Infineon Technologies IRF3710Z%28S%2CL%29PbF.pdf description Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRGP4069DPBF IRGP4069DPBF Infineon Technologies irgp4069dpbf.pdf?fileId=5546d462533600a4015356561816245a Description: IGBT TRENCH 600V 76A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 35A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 46ns/105ns
Switching Energy: 390µJ (on), 632µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 268 W
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FF450R12ME4BDLA1
Виробник: Infineon Technologies
Description: FF450R12 - IGBT Module
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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FF300R17KE3HDLA1
Виробник: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 404 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
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FT150R12KE3GB4BDLA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 700W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
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BSM100GD60DLCBDLA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 130A 430W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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D841S45TS01XDLA1
D841S45TS01XDLA1
Виробник: Infineon Technologies
Description: DIODE GP 4.5KV 1080A D7514-1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1080A
Supplier Device Package: BG-D7514-1
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 2500 A
Current - Reverse Leakage @ Vr: 140 mA @ 4500 V
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DF450R17N2E4PB11BDLA1
Виробник: Infineon Technologies
Description: MODULE
Packaging: Bulk
Part Status: Last Time Buy
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IPW60R045CPFKSA1 IPW60R045CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d8e55489b
IPW60R045CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
на замовлення 1681 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1057.46 грн
30+629.38 грн
120+591.18 грн
В кошику  од. на суму  грн.
IPW60R037P7XKSA1 Infineon-IPW60R037P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bb7bab83ca7
IPW60R037P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+680.37 грн
30+333.42 грн
120+332.69 грн
510+303.55 грн
В кошику  од. на суму  грн.
IPW60R125C6FKSA1 Infineon-IPx60R125C6-DS-v02_03-EN.pdf?fileId=db3a30432313ff5e01235b1ae8fc4910
IPW60R125C6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+401.71 грн
30+234.77 грн
120+206.20 грн
В кошику  од. на суму  грн.
IPW60R031CFD7XKSA1 Infineon-IPW60R031CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea44f315531e2
IPW60R031CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 32.6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
на замовлення 202 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+823.27 грн
30+473.45 грн
120+403.41 грн
В кошику  од. на суму  грн.
IPW60R017C7XKSA1 Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8
IPW60R017C7XKSA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1440.12 грн
30+958.85 грн
В кошику  од. на суму  грн.
IPW60R070P6XKSA1 Infineon-IPW60R070P6-DS-v02_00-en.pdf?fileId=5546d461464245d3014694ab3f43692e
IPW60R070P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 53.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20.6A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 100 V
на замовлення 1859 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+508.88 грн
30+239.87 грн
120+238.87 грн
510+211.23 грн
В кошику  од. на суму  грн.
IPW60R170CFD7XKSA1 Infineon-IPW60R170CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea46190b731e6
IPW60R170CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+321.53 грн
10+205.11 грн
100+145.42 грн
В кошику  од. на суму  грн.
IPW60R055CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPW60R055CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
на замовлення 73 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+593.04 грн
30+332.55 грн
В кошику  од. на суму  грн.
IPW60R090CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPW60R090CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
на замовлення 201 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+418.38 грн
30+226.21 грн
120+197.30 грн
В кошику  од. на суму  грн.
IPW60R045CPAFKSA1 Infineon-IPW60R045CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee38caa259f4
IPW60R045CPAFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1088 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1139.24 грн
30+678.71 грн
120+608.23 грн
В кошику  од. на суму  грн.
IPW60R125CFD7XKSA1 Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2
IPW60R125CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+389.01 грн
30+210.95 грн
В кошику  од. на суму  грн.
IPW60R037CSFDXKSA1 Infineon-IPW60R037CSFD-DS-v02_00-EN.pdf?fileId=5546d46268554f4a016894b0464868d4
IPW60R037CSFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+770.87 грн
30+440.68 грн
В кошику  од. на суму  грн.
IPW60R040CFD7XKSA1 Infineon-IPW60R040CFD7-DS-v02_01-EN.pdf?fileId=5546d46261ff5777016200300a8a2c0e
IPW60R040CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+696.24 грн
В кошику  од. на суму  грн.
IPW60R080P7XKSA1 Infineon-IPW60R080P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accfab2a0026a
IPW60R080P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+429.50 грн
50+217.88 грн
100+198.97 грн
500+155.67 грн
В кошику  од. на суму  грн.
IPW60R105CFD7XKSA1 Infineon-IPW60R105CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633f162a544e05
IPW60R105CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+419.18 грн
В кошику  од. на суму  грн.
IPW60R099P7XKSA1 Infineon-IPW60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1f57c16d03d0
IPW60R099P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 436 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+337.40 грн
30+183.25 грн
120+170.25 грн
В кошику  од. на суму  грн.
IPW60R145CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPW60R145CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET HIGH POWER
Packaging: Tube
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+346.14 грн
В кошику  од. на суму  грн.
IPW60R070C6FKSA1 IPW60R070C6_V2_1.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432313ff5e01232862aa644ac5
IPW60R070C6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Power Dissipation (Max): 391W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+632.73 грн
30+370.96 грн
120+333.18 грн
В кошику  од. на суму  грн.
IPW60R099CPFKSA1 IPW60R099CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca4c24745
IPW60R099CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+544.61 грн
30+324.14 грн
120+296.46 грн
В кошику  од. на суму  грн.
IPW60R099C7XKSA1 Infineon-IPW60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c8a42de3ffe
IPW60R099C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R070CFD7XKSA1 Infineon-IPW60R070CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea4617c8c31e4
IPW60R070CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
на замовлення 1410 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+508.88 грн
30+280.97 грн
120+235.04 грн
510+193.39 грн
В кошику  од. на суму  грн.
S6BP203A8FST2B000
S6BP203A8FST2B000
Виробник: Infineon Technologies
Description: IC REG BCK-BST 3.3V 2.4A 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
S6BP203A8FST2B000
S6BP203A8FST2B000
Виробник: Infineon Technologies
Description: IC REG BCK-BST 3.3V 2.4A 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up/Step-Down
Current - Output: 2.4A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.1MHz
Voltage - Input (Max): 42V
Topology: Buck-Boost
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
на замовлення 3964 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+630.35 грн
10+548.29 грн
25+522.79 грн
100+426.00 грн
250+406.86 грн
500+370.96 грн
1000+317.79 грн
В кошику  од. на суму  грн.
MB39C006APN-G-AMEFE1
MB39C006APN-G-AMEFE1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
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MB39C006APN-G-AMEFE1
MB39C006APN-G-AMEFE1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.25 грн
10+102.21 грн
25+91.89 грн
100+75.55 грн
250+70.45 грн
500+67.38 грн
1000+63.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MB39C014PN-G-K1EFE1
MB39C014PN-G-K1EFE1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
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MB39C014PN-G-K1EFE1
MB39C014PN-G-K1EFE1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 800MA 10SON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz, 3.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 10-SON (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.564V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
товару немає в наявності
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DDB6U85N16LHOSA1 Infineon-DDB6U85N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b43147c453fb
DDB6U85N16LHOSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V AGISOPACK1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: AG-ISOPACK-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12133.85 грн
В кошику  од. на суму  грн.
DDB6U215N16LHOSA1 Infineon-DDB6U215N16L-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b431505f5407
DDB6U215N16LHOSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12849.94 грн
В кошику  од. на суму  грн.
DDB6U104N18RRBOSA1 Infineon+-+Brochure+-+Solutions+for+Wind+Energy+Systems.pdf?fileId=db3a30433f9a93b7013f9f2973c01ed6
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Bulk
Part Status: Active
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+5036.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DDB6U134N16RRB80BPSA1 Infineon-DDB6U134N16RR-DS-v01_01-de.pdf?fileId=db3a304412b407950112b433eac35e2a
DDB6U134N16RRB80BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-8231
Packaging: Tray
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7145.03 грн
В кошику  од. на суму  грн.
DDB6U50N22W1RPB11BPSA1 Infineon-DDB6U50N22W1RP_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c850f4bee018582bb8f2e1958
DDB6U50N22W1RPB11BPSA1
Виробник: Infineon Technologies
Description: EASY BRIDGE MODULE
Packaging: Tray
Part Status: Active
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3347.05 грн
10+2872.03 грн
30+2700.94 грн
В кошику  од. на суму  грн.
DDB6U75N16W1RBOMA1 Infineon-DDB6U75N16W1R-DS-v02_00-en_de.pdf?fileId=db3a30432239cccd0122f436495e5657
DDB6U75N16W1RBOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 69A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5003.11 грн
В кошику  од. на суму  грн.
DDB6U180N16RRPB11BPSA1 Infineon-DDB6U180N16RR_B11-DS-v03_00-EN.pdf?fileId=5546d462518ffd8501524095699c70bc
DDB6U180N16RRPB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-8111
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8887.62 грн
В кошику  од. на суму  грн.
DDB6U25N16VRBOMA1 EUPCS02448-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 86 W
Current - Collector Cutoff (Max): 1 mA
товару немає в наявності
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DDB6U180N16RRPB37BPSA1 Infineon-DDB6U180N16RRP_B37-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d7f3f7bd50895
DDB6U180N16RRPB37BPSA1
Виробник: Infineon Technologies
Description: BRIDGE RECT 3P 1.6KV 50A ECONO2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2-7
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12116.38 грн
В кошику  од. на суму  грн.
DDB6U180N16RRBPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Part Status: Active
товару немає в наявності
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DDB6U134N16RRB38BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 70A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
товару немає в наявності
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DDB6U75N16W1RB11BOMA1 Infineon-DDB6U75N16W1R_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af124a1255e01
DDB6U75N16W1RB11BOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 69A 335W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
товару немає в наявності
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DDB6U104N16RRPB37BPSA1 Infineon-DDB6U104N16RRP_B37-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5745f6760280
DDB6U104N16RRPB37BPSA1
Виробник: Infineon Technologies
Description: BRIDGE RECT 3P 1.6KV 35A ECONO2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-ECONO2-7
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
товару немає в наявності
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CY9BF518TPMC-GK7E1 Infineon-CY9B510T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edeaf65639f
CY9BF518TPMC-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+907.42 грн
10+803.10 грн
40+769.82 грн
80+636.53 грн
240+605.29 грн
440+566.24 грн
В кошику  од. на суму  грн.
CY9BF518TBGL-GK7E1 Infineon-CY9B510T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edeaf65639f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF518TBGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
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CY9BF517TBGL-GK7E1 Infineon-CY9B510T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edeaf65639f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF517TBGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
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CY9BF515RPMC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF515RPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
товару немає в наявності
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CY9BF516NPQC-G-JNE2 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF516NPQC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
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BC856SH6327XTSA1 bc856s_bc856u_bc857s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a3156401d8
BC856SH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS 2PNP 65V 0.1A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
товару немає в наявності
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IRLU3110ZPBF description irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
IRLU3110ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+183.39 грн
75+81.29 грн
150+73.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCV47E6433HTMA1 bcv27_bcv47.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445cf7c3b0188
BCV47E6433HTMA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 60V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
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T2080NXN8MQB
Виробник: Infineon Technologies
Description: T2080 - QorIQ, 64b Power Arch, 8
Packaging: Bulk
Part Status: Active
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IPTG063N15NM5ATMA1 Infineon-IPTG063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d89143913ebf
IPTG063N15NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 163µA
Supplier Device Package: PG-HSOG-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V
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IPTG063N15NM5ATMA1 Infineon-IPTG063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c81ae03fc0181d89143913ebf
IPTG063N15NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 163µA
Supplier Device Package: PG-HSOG-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+385.83 грн
10+276.44 грн
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IPP60R190E6XKSA1 IPP60R190E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801286cb864242943
IPP60R190E6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
на замовлення 1870 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+253.25 грн
50+122.87 грн
100+111.16 грн
500+85.05 грн
1000+78.86 грн
Мінімальне замовлення: 2
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IRF3710ZSPBF description IRF3710Z%28S%2CL%29PbF.pdf
IRF3710ZSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRGP4069DPBF irgp4069dpbf.pdf?fileId=5546d462533600a4015356561816245a
IRGP4069DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 76A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 35A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 46ns/105ns
Switching Energy: 390µJ (on), 632µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 268 W
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