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IPB023N04NF2SATMA1 IPB023N04NF2SATMA1 Infineon Technologies Infineon-IPB023N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12c45d6afa Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
товару немає в наявності
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IRFI4410ZPBF IRFI4410ZPBF Infineon Technologies infineon-irfi4410z-ds-en.pdf Description: MOSFET N-CH 100V 43A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 26A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
товару немає в наявності
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S29GL128S10FHI010 S29GL128S10FHI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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CYBT-483056-02 CYBT-483056-02 Infineon Technologies Infineon-CYBT-483056-02_CYBT-483062-02_EZ-BT_XR_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c8b972a8 Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 687 шт:
термін постачання 21-31 дні (днів)
1+1076.60 грн
10+901.51 грн
25+854.77 грн
100+742.00 грн
250+705.99 грн
В кошику  од. на суму  грн.
CYBT-423054-02 CYBT-423054-02 Infineon Technologies Infineon-CYBT-423054-02_CYBT-423060-02_EZ-BT_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9d97472bd Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
1+919.56 грн
10+770.02 грн
25+729.85 грн
100+633.17 грн
В кошику  од. на суму  грн.
CYBT-423054-EVAL CYBT-423054-EVAL Infineon Technologies Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-423054-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0322651a5b Description: CYBT-423054-EVAL
Packaging: Tray
Part Status: Active
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
For Use With/Related Products: CYBT-423054-02
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+3932.69 грн
В кошику  од. на суму  грн.
CYBT-483056-EVAL CYBT-483056-EVAL Infineon Technologies Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-483056-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f032d171a6f Description: CYBT-483056-EVAL
Packaging: Tray
Part Status: Active
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
For Use With/Related Products: CYBT-483056-02
Contents: Board(s)
Utilized IC / Part: CYBT-483056-02
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3735.34 грн
В кошику  од. на суму  грн.
CY9BF429SPMC-GK7E1 CY9BF429SPMC-GK7E1 Infineon Technologies Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32B 1.5625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 122
DigiKey Programmable: Not Verified
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CY9BF429TABGL-GK7E1 CY9BF429TABGL-GK7E1 Infineon Technologies Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32B 1.5625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
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CY9BF418TBGL-GK7E1 CY9BF418TBGL-GK7E1 Infineon Technologies Infineon-CY9B410T_Series_32_bit_ARM_Cortex_-M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0cae76684&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
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CY9BF428TABGL-GK7E1 CY9BF428TABGL-GK7E1 Infineon Technologies Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32B 1.0625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
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S29GL128S10FHB010 S29GL128S10FHB010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FAIV23 S29GL128S10FAIV23 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10GHIV20 S29GL128S10GHIV20 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 56FBGA
Packaging: Tray
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)
1+435.01 грн
10+381.94 грн
25+374.64 грн
40+349.06 грн
80+313.22 грн
260+312.04 грн
520+287.66 грн
1040+275.52 грн
В кошику  од. на суму  грн.
S29GL128S10FHB013 S29GL128S10FHB013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FAIV13 S29GL128S10FAIV13 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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S29GL128S10FHSS10 S29GL128S10FHSS10 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FHIV13 S29GL128S10FHIV13 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S10FHIV23 S29GL128S10FHIV23 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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XMC4100F64K128BAXQMA1 XMC4100F64K128BAXQMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
1+508.91 грн
10+380.24 грн
25+352.68 грн
160+295.16 грн
320+292.73 грн
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IRFB3306PBF IRFB3306PBF Infineon Technologies irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165 Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
на замовлення 3012 шт:
термін постачання 21-31 дні (днів)
2+179.71 грн
50+84.88 грн
100+76.31 грн
500+57.51 грн
1000+52.97 грн
2000+49.16 грн
Мінімальне замовлення: 2
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CY62146ELL-45ZSXIT CY62146ELL-45ZSXIT Infineon Technologies Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270 Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY62146ELL-45ZSXIT CY62146ELL-45ZSXIT Infineon Technologies Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270 Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
1+891.85 грн
10+761.77 грн
25+726.42 грн
50+657.60 грн
100+634.32 грн
250+604.78 грн
500+573.76 грн
В кошику  од. на суму  грн.
IPAW60R280P7SE8228XKSA1 IPAW60R280P7SE8228XKSA1 Infineon Technologies Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R600P7SE8228XKSA1 IPAW60R600P7SE8228XKSA1 Infineon Technologies infineon-ipaw60r600p7s-ds-en.pdf Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R360P7SE8228XKSA1 IPAW60R360P7SE8228XKSA1 Infineon Technologies infineon-ipaw60r360p7s-datasheet-en.pdf Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
KP226N3622XTMA1 KP226N3622XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+257.62 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
KP226N3622XTMA1 KP226N3622XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+533.26 грн
10+384.93 грн
25+342.17 грн
50+305.07 грн
100+297.04 грн
500+248.87 грн
В кошику  од. на суму  грн.
IRFP4332PBF IRFP4332PBF Infineon Technologies irfp4332pbf.pdf?fileId=5546d462533600a40153562c58682013 description Description: MOSFET N-CH 250V 57A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA65R400CEXKSA1 IPA65R400CEXKSA1 Infineon Technologies Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493 Description: MOSFET N-CH 650V TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
3+136.88 грн
50+57.08 грн
100+52.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA50R280CEXKSA2 IPA50R280CEXKSA2 Infineon Technologies DS_IPA50R280CE_2_2.pdf?fileId=5546d4614815da880148594e0dbc1751 Description: MOSFET N-CH 500V 18.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 30.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
3+119.25 грн
50+54.55 грн
100+48.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ACCESSORY34362NOSA1 Infineon Technologies Description: ACCESSORY 34362NOSA1
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IDW40E65D2FKSA1 IDW40E65D2FKSA1 Infineon Technologies DS_IDW40E65D2_1_2.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433d68e984013d8226e10d7547 Description: DIODE STD 650V 80A PGTO24731
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 1657 шт:
термін постачання 21-31 дні (днів)
2+209.11 грн
30+108.20 грн
120+87.57 грн
510+67.96 грн
1020+62.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDP12E120XKSA1 IDP12E120XKSA1 Infineon Technologies IDP12E120_v2_3G[1].pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e012374c3dade485b Description: DIODE STD 1200V 28A PGTO22022
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 28A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
2+184.75 грн
50+96.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDP30E65D2XKSA1 IDP30E65D2XKSA1 Infineon Technologies Infineon-IDP30E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef86e3ec2 Description: DIODE GP 650V 60A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
2+189.79 грн
50+89.13 грн
100+80.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFBL3703 IRFBL3703 Infineon Technologies irfbl3703.pdf Description: MOSFET N-CH 30V 260A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 76A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Super D2-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FF400R07KE4HOSA1 FF400R07KE4HOSA1 Infineon Technologies Infineon-FF400R07KE4-DS-v03_00-en_de.pdf?fileId=db3a30432d081e66012d097a5c6d001d Description: IGBT MODULE 650V 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+8329.77 грн
10+6725.36 грн
В кошику  од. на суму  грн.
FF200R17KE3HOSA1 FF200R17KE3HOSA1 Infineon Technologies Infineon-FF200R17KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fcc6c4d9c Description: IGBT MOD 1700V 310A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+10355.32 грн
10+8812.71 грн
В кошику  од. на суму  грн.
BFP420H6801XTSA1 BFP420H6801XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+14.35 грн
6000+13.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BFP420H6801XTSA1 BFP420H6801XTSA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 8825 шт:
термін постачання 21-31 дні (днів)
10+33.59 грн
15+22.32 грн
25+19.86 грн
100+16.16 грн
250+14.99 грн
500+14.27 грн
1000+13.46 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
D711N65TXPSA1 D711N65TXPSA1 Infineon Technologies Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f Description: DIODE STANDARD 6500V 1070A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS11TFV023 S29GL01GS11TFV023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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TLE4997A8DE0300XUMA1 TLE4997A8DE0300XUMA1 Infineon Technologies Infineon-TLE4997A8D_DS-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015bc87f823f319f Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Features: Programmable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 1.32kHz
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT ~ ±200mT
Current - Output (Max): 1mA
Current - Supply (Max): 10mA
Supplier Device Package: PG-TDSO-8-1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+209.17 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IKP39N65ES5XKSA1 IKP39N65ES5XKSA1 Infineon Technologies Infineon-IKP39N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b7740f4442c Description: IGBT TRENCH FS 650V 62A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 39A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/120ns
Switching Energy: 800µJ (on), 500µJ (off)
Test Condition: 400V, 39A, 12.8Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 481 шт:
термін постачання 21-31 дні (днів)
2+263.69 грн
50+128.01 грн
100+115.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 Infineon Technologies Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914 Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
2+210.78 грн
10+131.41 грн
100+90.67 грн
500+70.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R060P7XKSA1 IPA60R060P7XKSA1 Infineon Technologies infineon-ipa60r060p7-datasheet-en.pdf Description: MOSFET N-CHANNEL 600V 48A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 284 шт:
термін постачання 21-31 дні (днів)
1+409.81 грн
50+207.75 грн
100+189.72 грн
В кошику  од. на суму  грн.
IPP60R070CFD7XKSA1 IPP60R070CFD7XKSA1 Infineon Technologies Infineon-IPP60R070CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3e1505931e0 Description: MOSFET N-CH 650V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
на замовлення 696 шт:
термін постачання 21-31 дні (днів)
1+423.25 грн
50+210.39 грн
100+201.11 грн
500+153.59 грн
В кошику  од. на суму  грн.
IPP60R125P6XKSA1 IPP60R125P6XKSA1 Infineon Technologies Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f Description: MOSFET N-CH 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
товару немає в наявності
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IPP60R160C6XKSA1 IPP60R160C6XKSA1 Infineon Technologies IPP60R160C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123f06a60d340d2 Description: MOSFET N-CH 600V 23.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
товару немає в наявності
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S29AL016J55TFIR10 S29AL016J55TFIR10 Infineon Technologies Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 453 шт:
термін постачання 21-31 дні (днів)
2+234.30 грн
10+211.06 грн
25+204.95 грн
50+187.94 грн
100+183.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29GL128P90FFIR10 S29GL128P90FFIR10 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
на замовлення 515 шт:
термін постачання 21-31 дні (днів)
1+496.31 грн
10+444.77 грн
25+431.28 грн
50+395.21 грн
180+377.65 грн
360+368.27 грн
В кошику  од. на суму  грн.
S29AL008J55BFIR10 S29AL008J55BFIR10 Infineon Technologies Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 8MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
на замовлення 313 шт:
термін постачання 21-31 дні (днів)
2+201.55 грн
10+181.31 грн
25+176.07 грн
50+161.47 грн
100+157.70 грн
250+152.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29GL128P90FAIR10 S29GL128P90FAIR10 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
1+536.62 грн
10+471.62 грн
25+462.63 грн
40+431.02 грн
180+386.75 грн
В кошику  од. на суму  грн.
S29GL256N90TFIR10 S29GL256N90TFIR10 Infineon Technologies download Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
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CY8C5888FNI-LP210T CY8C5888FNI-LP210T Infineon Technologies Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9 Description: IC MCU 32BIT 256KB FLASH 99WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 99-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 99-WLCSP (5.19x5.94)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
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S29GL512T12TFVV23 S29GL512T12TFVV23 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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BCX5316H6433XTMA1 BCX5316H6433XTMA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5316H6327XTSA1 BCX5316H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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CY9BF322LPMC1-G-MNE2 CY9BF322LPMC1-G-MNE2 Infineon Technologies Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+568.53 грн
10+494.75 грн
25+471.72 грн
160+384.37 грн
320+367.09 грн
480+334.70 грн
960+286.73 грн
В кошику  од. на суму  грн.
S29GL064S70TFI010 S29GL064S70TFI010 Infineon Technologies Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
на замовлення 1235 шт:
термін постачання 21-31 дні (днів)
2+322.48 грн
10+289.43 грн
25+280.87 грн
91+252.18 грн
182+246.08 грн
273+242.54 грн
546+232.65 грн
1001+227.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB023N04NF2SATMA1 Infineon-IPB023N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12c45d6afa
IPB023N04NF2SATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
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IRFI4410ZPBF infineon-irfi4410z-ds-en.pdf
IRFI4410ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 43A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 26A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
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S29GL128S10FHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHI010
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CYBT-483056-02 Infineon-CYBT-483056-02_CYBT-483062-02_EZ-BT_XR_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c8b972a8
CYBT-483056-02
Виробник: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 687 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1076.60 грн
10+901.51 грн
25+854.77 грн
100+742.00 грн
250+705.99 грн
В кошику  од. на суму  грн.
CYBT-423054-02 Infineon-CYBT-423054-02_CYBT-423060-02_EZ-BT_WICED_Module-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9d97472bd
CYBT-423054-02
Виробник: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+919.56 грн
10+770.02 грн
25+729.85 грн
100+633.17 грн
В кошику  од. на суму  грн.
CYBT-423054-EVAL Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-423054-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0322651a5b
CYBT-423054-EVAL
Виробник: Infineon Technologies
Description: CYBT-423054-EVAL
Packaging: Tray
Part Status: Active
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
For Use With/Related Products: CYBT-423054-02
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3932.69 грн
В кошику  од. на суму  грн.
CYBT-483056-EVAL Infineon-EZ-BT_Module_Arduino_Evaluation_Board_CYBT-483056-EVAL-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f032d171a6f
CYBT-483056-EVAL
Виробник: Infineon Technologies
Description: CYBT-483056-EVAL
Packaging: Tray
Part Status: Active
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5.x (BLE)
Supplied Contents: Board(s)
For Use With/Related Products: CYBT-483056-02
Contents: Board(s)
Utilized IC / Part: CYBT-483056-02
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3735.34 грн
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CY9BF429SPMC-GK7E1 Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF429SPMC-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 122
DigiKey Programmable: Not Verified
товару немає в наявності
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CY9BF429TABGL-GK7E1 Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF429TABGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF418TBGL-GK7E1 Infineon-CY9B410T_Series_32_bit_ARM_Cortex_-M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0cae76684&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF418TBGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF428TABGL-GK7E1 Infineon-CY9B420TA_Series_32_bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede4a1e6331&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF428TABGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Part Status: Active
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
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S29GL128S10FHB010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHB010
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL128S10FAIV23 S29GL-S_PbPkg.pdf
S29GL128S10FAIV23
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL128S10GHIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10GHIV20
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56FBGA
Packaging: Tray
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
на замовлення 2635 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+435.01 грн
10+381.94 грн
25+374.64 грн
40+349.06 грн
80+313.22 грн
260+312.04 грн
520+287.66 грн
1040+275.52 грн
В кошику  од. на суму  грн.
S29GL128S10FHB013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHB013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL128S10FAIV13 S29GL-S_PbPkg.pdf
S29GL128S10FAIV13
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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S29GL128S10FHSS10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL128S10FHSS10
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL128S10FHIV13 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHIV13
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL128S10FHIV23 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10FHIV23
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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XMC4100F64K128BAXQMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4100F64K128BAXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+508.91 грн
10+380.24 грн
25+352.68 грн
160+295.16 грн
320+292.73 грн
В кошику  од. на суму  грн.
IRFB3306PBF irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165
IRFB3306PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
на замовлення 3012 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+179.71 грн
50+84.88 грн
100+76.31 грн
500+57.51 грн
1000+52.97 грн
2000+49.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62146ELL-45ZSXIT Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270
CY62146ELL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY62146ELL-45ZSXIT Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270
CY62146ELL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+891.85 грн
10+761.77 грн
25+726.42 грн
50+657.60 грн
100+634.32 грн
250+604.78 грн
500+573.76 грн
В кошику  од. на суму  грн.
IPAW60R280P7SE8228XKSA1
IPAW60R280P7SE8228XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
товару немає в наявності
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IPAW60R600P7SE8228XKSA1 infineon-ipaw60r600p7s-ds-en.pdf
IPAW60R600P7SE8228XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IPAW60R360P7SE8228XKSA1 infineon-ipaw60r360p7s-datasheet-en.pdf
IPAW60R360P7SE8228XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
KP226N3622XTMA1 fundamentals-of-power-semiconductors
KP226N3622XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+257.62 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
KP226N3622XTMA1 fundamentals-of-power-semiconductors
KP226N3622XTMA1
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+533.26 грн
10+384.93 грн
25+342.17 грн
50+305.07 грн
100+297.04 грн
500+248.87 грн
В кошику  од. на суму  грн.
IRFP4332PBF description irfp4332pbf.pdf?fileId=5546d462533600a40153562c58682013
IRFP4332PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 57A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
товару немає в наявності
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IPA65R400CEXKSA1 Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493
IPA65R400CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.88 грн
50+57.08 грн
100+52.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA50R280CEXKSA2 DS_IPA50R280CE_2_2.pdf?fileId=5546d4614815da880148594e0dbc1751
IPA50R280CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 18.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 30.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.25 грн
50+54.55 грн
100+48.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ACCESSORY34362NOSA1
Виробник: Infineon Technologies
Description: ACCESSORY 34362NOSA1
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IDW40E65D2FKSA1 DS_IDW40E65D2_1_2.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433d68e984013d8226e10d7547
IDW40E65D2FKSA1
Виробник: Infineon Technologies
Description: DIODE STD 650V 80A PGTO24731
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 1657 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+209.11 грн
30+108.20 грн
120+87.57 грн
510+67.96 грн
1020+62.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDP12E120XKSA1 IDP12E120_v2_3G[1].pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e012374c3dade485b
IDP12E120XKSA1
Виробник: Infineon Technologies
Description: DIODE STD 1200V 28A PGTO22022
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 28A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+184.75 грн
50+96.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDP30E65D2XKSA1 Infineon-IDP30E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4ef86e3ec2
IDP30E65D2XKSA1
Виробник: Infineon Technologies
Description: DIODE GP 650V 60A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+189.79 грн
50+89.13 грн
100+80.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFBL3703 irfbl3703.pdf
IRFBL3703
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 260A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 76A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Super D2-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FF400R07KE4HOSA1 Infineon-FF400R07KE4-DS-v03_00-en_de.pdf?fileId=db3a30432d081e66012d097a5c6d001d
FF400R07KE4HOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 650V 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8329.77 грн
10+6725.36 грн
В кошику  од. на суму  грн.
FF200R17KE3HOSA1 Infineon-FF200R17KE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fcc6c4d9c
FF200R17KE3HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 310A 1250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10355.32 грн
10+8812.71 грн
В кошику  од. на суму  грн.
BFP420H6801XTSA1 BFP420_Rev2013.pdf
BFP420H6801XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.35 грн
6000+13.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BFP420H6801XTSA1 BFP420_Rev2013.pdf
BFP420H6801XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 8825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.59 грн
15+22.32 грн
25+19.86 грн
100+16.16 грн
250+14.99 грн
500+14.27 грн
1000+13.46 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
D711N65TXPSA1 Infineon-D711N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b42f99154c5f
D711N65TXPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 6500V 1070A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1070A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
товару немає в наявності
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S29GL01GS11TFV023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11TFV023
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
TLE4997A8DE0300XUMA1 Infineon-TLE4997A8D_DS-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015bc87f823f319f
TLE4997A8DE0300XUMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Features: Programmable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 1.32kHz
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT ~ ±200mT
Current - Output (Max): 1mA
Current - Supply (Max): 10mA
Supplier Device Package: PG-TDSO-8-1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+209.17 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IKP39N65ES5XKSA1 Infineon-IKP39N65ES5-DS-v02_01-EN.pdf?fileId=5546d462696dbf1201697b7740f4442c
IKP39N65ES5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 39A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/120ns
Switching Energy: 800µJ (on), 500µJ (off)
Test Condition: 400V, 39A, 12.8Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 481 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+263.69 грн
50+128.01 грн
100+115.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKB15N65EH5ATMA1 Infineon-IKB15N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd1328dc4914
IKB15N65EH5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/145ns
Switching Energy: 400µJ (on), 80µJ (off)
Test Condition: 400V, 15A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+210.78 грн
10+131.41 грн
100+90.67 грн
500+70.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R060P7XKSA1 infineon-ipa60r060p7-datasheet-en.pdf
IPA60R060P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 48A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 284 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+409.81 грн
50+207.75 грн
100+189.72 грн
В кошику  од. на суму  грн.
IPP60R070CFD7XKSA1 Infineon-IPP60R070CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea3e1505931e0
IPP60R070CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
на замовлення 696 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+423.25 грн
50+210.39 грн
100+201.11 грн
500+153.59 грн
В кошику  од. на суму  грн.
IPP60R125P6XKSA1 Infineon-IPX60R125P6-DS-v02_00-en%5B1%5D.pdf?fileId=5546d461464245d301468af2915b667f
IPP60R125P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R160C6XKSA1 IPP60R160C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123f06a60d340d2
IPP60R160C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J55TFIR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
S29AL016J55TFIR10
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 453 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.30 грн
10+211.06 грн
25+204.95 грн
50+187.94 грн
100+183.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29GL128P90FFIR10 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FFIR10
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
на замовлення 515 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+496.31 грн
10+444.77 грн
25+431.28 грн
50+395.21 грн
180+377.65 грн
360+368.27 грн
В кошику  од. на суму  грн.
S29AL008J55BFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J55BFIR10
Виробник: Infineon Technologies
Description: IC FLASH 8MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
на замовлення 313 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+201.55 грн
10+181.31 грн
25+176.07 грн
50+161.47 грн
100+157.70 грн
250+152.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29GL128P90FAIR10 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FAIR10
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+536.62 грн
10+471.62 грн
25+462.63 грн
40+431.02 грн
180+386.75 грн
В кошику  од. на суму  грн.
S29GL256N90TFIR10 download
S29GL256N90TFIR10
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8, 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY8C5888FNI-LP210T Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9
CY8C5888FNI-LP210T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 99WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 99-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 99-WLCSP (5.19x5.94)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
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S29GL512T12TFVV23 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12TFVV23
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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BCX5316H6433XTMA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX5316H6433XTMA1
Виробник: Infineon Technologies
Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX5316H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX5316H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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CY9BF322LPMC1-G-MNE2 Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c
CY9BF322LPMC1-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+568.53 грн
10+494.75 грн
25+471.72 грн
160+384.37 грн
320+367.09 грн
480+334.70 грн
960+286.73 грн
В кошику  од. на суму  грн.
S29GL064S70TFI010 Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S29GL064S70TFI010
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
на замовлення 1235 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+322.48 грн
10+289.43 грн
25+280.87 грн
91+252.18 грн
182+246.08 грн
273+242.54 грн
546+232.65 грн
1001+227.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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