Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123000) > Сторінка 561 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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IDV08E65D2XKSA1 | Infineon Technologies |
Description: DIODE STANDARD 650V 8A PGTO2202Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO220-2 Full Pack Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 40 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICE3AR10080CJZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIPPackaging: Tube Power (Watts): 22 W Part Status: Active Voltage - Start Up: 17 V Fault Protection: Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DIP-7-1 Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 800V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 75% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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ICE3AR1580VJZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIPVoltage - Start Up: 17 V Fault Protection: Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DIP-7-1 Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 800V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 75% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Packaging: Tube Power (Watts): 57 W Part Status: Active |
на замовлення 1903 шт: термін постачання 21-31 дні (днів) |
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ICE3AR4780VJZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIPPower (Watts): 31 W Part Status: Active Voltage - Start Up: 17 V Fault Protection: Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DIP-7-1 Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 800V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 75% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Packaging: Tube |
на замовлення 734 шт: термін постачання 21-31 дні (днів) |
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ICE3AR1080VJZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Over Load, Over Temperature, Over Voltage Voltage - Start Up: 17 V Part Status: Active Power (Watts): 71 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1345S-100AXCT | Infineon Technologies |
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP Memory Organization: 128K x 36 Access Time: 8 ns Memory Interface: Parallel Part Status: Active Supplier Device Package: 100-TQFP (14x14) Memory Format: SRAM Clock Frequency: 100 MHz Technology: SRAM - Synchronous, SDR Voltage - Supply: 3.15V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 4.5Mbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||||
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CY7C1325S-100AXCT | Infineon Technologies |
Description: IC SRAM 4.5MBIT PAR 100TQFP Clock Frequency: 100 MHz Technology: SRAM - Synchronous, SDR Voltage - Supply: 3.15V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 4.5Mbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tape & Reel (TR) Memory Organization: 256K x 18 Access Time: 8 ns Memory Interface: Parallel Part Status: Active Supplier Device Package: 100-TQFP (14x20) Memory Format: SRAM DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||||
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IM111X3Q1BAUMA1 | Infineon Technologies |
Description: CIPOS NANO PG-IQFN-37Voltage: 250 V Current: 12 A Part Status: Active Voltage - Isolation: 1500Vrms Configuration: H-Bridge Type: MOSFET Mounting Type: Surface Mount Package / Case: 39-PowerVQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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IM111X3Q1BAUMA1 | Infineon Technologies |
Description: CIPOS NANO PG-IQFN-37Voltage: 250 V Current: 12 A Part Status: Active Voltage - Isolation: 1500Vrms Configuration: H-Bridge Type: MOSFET Mounting Type: Surface Mount Package / Case: 39-PowerVQFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IM111X3Q1BAUMA1 | Infineon Technologies |
Description: CIPOS NANO PG-IQFN-37Configuration: H-Bridge Type: MOSFET Mounting Type: Surface Mount Package / Case: 39-PowerVQFN Packaging: Bulk Voltage: 250 V Current: 12 A Part Status: Active Voltage - Isolation: 1500Vrms |
на замовлення 2117 шт: термін постачання 21-31 дні (днів) |
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| PEF 20256 E V3.2-G | Infineon Technologies |
Description: IC TELECOM INTERFACE 323FCLBGAPower (Watts): 3 W Part Status: Obsolete Supplier Device Package: 323-FCLBGA Current - Supply: 200mA Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C Interface: HDLC, PPP, SS7, TMA Function: Multichannel Network Interface Controller (MUNICH) Mounting Type: Surface Mount Package / Case: 323-BBGA, FCBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. | |||||||||||||||||
| BSM75GD120DLCBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 125A 500W Operating Temperature: -40°C ~ 125°C Configuration: Full Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V Current - Collector Cutoff (Max): 92 µA Power - Max: 500 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 125 A Part Status: Not For New Designs Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||||
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XMC4200F64F256BAXQMA1 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 256KB (256K x 8) RAM Size: 40K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 16x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-19 Part Status: Active Number of I/O: 35 DigiKey Programmable: Not Verified |
на замовлення 523 шт: термін постачання 21-31 дні (днів) |
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XMC1401F064F0128AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1900 шт В кошику од. на суму грн. | ||||||||||||||||
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XMC1401F064F0128AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Cut Tape (CT) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
на замовлення 657 шт: термін постачання 21-31 дні (днів) |
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| SIGC100T60R3EX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V 200A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A Supplier Device Package: Die IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSZ0994NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 13A 8TSDSON-25Part Status: Active Supplier Device Package: PG-TSDSON-8-25 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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BSZ0994NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 13A 8TSDSON-25Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TSDSON-8-25 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V |
на замовлення 4962 шт: термін постачання 21-31 дні (днів) |
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CY7C63823-SXCT | Infineon Technologies |
Description: IC USB PERIPHERAL CTRLR 24-SOICPart Status: Last Time Buy Supplier Device Package: 24-SOIC Standards: USB 2.0 Protocol: USB Current - Supply: 40mA Voltage - Supply: 4V ~ 5.5V Operating Temperature: 0°C ~ 70°C Interface: GPIO, SPI Function: Controller Package / Case: 24-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IFX91041EJV33XUMA1 | Infineon Technologies |
Description: IC REG BUCK 3.3V 1.8A DSO-8-27Frequency - Switching: 370kHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 1.8A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Fixed Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Output (Min/Fixed): 3.3V Voltage - Input (Min): 4.75V Synchronous Rectifier: No Supplier Device Package: PG-DSO-8-27 Topology: Buck Voltage - Input (Max): 45V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE4997A8DE0300XUMA1 | Infineon Technologies |
Description: MAG SWITCH SPEED SENSOR 8TDSOQualification: AEC-Q100 Grade: Automotive Supplier Device Package: PG-TDSO-8-1 Current - Supply (Max): 10mA Current - Output (Max): 1mA Sensing Range: ±50mT ~ ±200mT Resolution: 12 b Technology: Hall Effect Bandwidth: 1.32kHz Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C Axis: Single Mounting Type: Surface Mount Output Type: Analog Voltage Package / Case: 8-SOIC (0.154", 3.90mm Width) Features: Programmable Part Status: Active Packaging: Cut Tape (CT) |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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62-0170PBF | Infineon Technologies |
Description: MOSFET N-CH 50V 3A 8-SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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ICE2A280ZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 72% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V Supplier Device Package: PG-DIP-7-1 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 13.5 V Control Features: Soft Start Part Status: Not For New Designs Power (Watts): 50 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DD710N16KHPSA2 | Infineon Technologies |
Description: DIODE MOD GP 1600V 710A MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 710A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 2500 A Current - Reverse Leakage @ Vr: 40 mA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C5248LTI-030 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 1x12b; D/A 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I²C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Obsolete Number of I/O: 36 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTF3050EJXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8Qualification: AEC-Q100 Grade: Automotive Rds On (Typ): 45mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: PWM Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Fault Protection: Over Current, Over Voltage, Short Circuit Supplier Device Package: PG-TDSO-8-31 Ratio - Input:Output: 1:1 Current - Output (Max): 4A Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Voltage - Load: 3V ~ 28V Input Type: Non-Inverting |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BTF3050EJXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8Qualification: AEC-Q100 Grade: Automotive Input Type: Non-Inverting Rds On (Typ): 45mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: PWM Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Fault Protection: Over Current, Over Voltage, Short Circuit Supplier Device Package: PG-TDSO-8-31 Ratio - Input:Output: 1:1 Current - Output (Max): 4A Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Voltage - Load: 3V ~ 28V |
на замовлення 919 шт: термін постачання 21-31 дні (днів) |
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| IDC50S120C5X7SA1 | Infineon Technologies |
Description: SIC CHIP Packaging: Bulk Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 6966 шт В кошику од. на суму грн. | |||||||||||||||||
| BSM300GA120DLCSHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 570A 2250W Input Capacitance (Cies) @ Vce: 22 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 2250 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 570 A Part Status: Last Time Buy Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A Operating Temperature: -40°C ~ 125°C Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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| BSM300GA120DLCSHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 570A 2250W Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A Operating Temperature: -40°C ~ 125°C Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 22 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 2250 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 570 A Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BSM300GA120DN2HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 430A 2500W MOD Input Capacitance (Cies) @ Vce: 22 nF @ 25 V Current - Collector Cutoff (Max): 5.6 mA Power - Max: 2500 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 430 A Part Status: Last Time Buy Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 300A Operating Temperature: 150°C (TJ) Configuration: Single Switch Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLE9262QXXUMA2 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 48VQFNPackage / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Last Time Buy Supplier Device Package: PG-VQFN-48-31 Applications: Automotive Voltage - Supply: 28V Interface: SPI Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| AIHD15N60RFATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 30A TO252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: PG-TO252-3-313 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/160ns Switching Energy: 270µJ (on), 250µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 240 W |
на замовлення 8515 шт: термін постачання 21-31 дні (днів) |
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CY25560SXCT | Infineon Technologies |
Description: IC CLK/FREQ SYNTH 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 100MHz Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator Input: Clock, Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.97V ~ 3.63V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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CY8C4025LQS-S411T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 24UFQFNPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b; D/A 1x7/1x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Part Status: Active Number of I/O: 19 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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CY8C4024LQS-S411T | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b; D/A 1x7/1x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Part Status: Active Number of I/O: 19 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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CY8C4024LQS-S411 | Infineon Technologies |
Description: PSOC4 - GENERALPackage / Case: 24-UFQFN Exposed Pad Packaging: Tray Number of I/O: 19 Part Status: Active Supplier Device Package: 24-QFN (4x4) Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x10b; D/A 1x7/1x8b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 2K x 8 Program Memory Size: 16KB (16K x 8) Speed: 24MHz Mounting Type: Surface Mount, Wettable Flank |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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CY8C4045LQS-S411T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 24UFQFNNumber of I/O: 19 Part Status: Active Supplier Device Package: 24-QFN (4x4) Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x10b; D/A 1x7/1x8b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 4K x 8 Program Memory Size: 32KB (32K x 8) Speed: 48MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 24-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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CY8C4025LQS-S411 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 24UFQFNPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b; D/A 1x7/1x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Part Status: Active Number of I/O: 19 |
на замовлення 4894 шт: термін постачання 21-31 дні (днів) |
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FF900R12IP4DBOSA2 | Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100WPackaging: Tray Input Capacitance (Cies) @ Vce: 54 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 5100 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 900 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A Operating Temperature: -40°C ~ 150°C Configuration: 2 Independent Input: Standard Mounting Type: Chassis Mount Package / Case: Module |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
| 370015736 | Infineon Technologies |
Description: IC MCU 16BIT 64KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 15x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART Peripherals: DMA, LVD, POR, WDT Supplier Device Package: 64-LQFP (12x12) Part Status: Obsolete Number of I/O: 51 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 370014321 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 128KB (128K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 15x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART Peripherals: DMA, LVD, POR, WDT Supplier Device Package: 64-LQFP (12x12) Part Status: Obsolete Number of I/O: 51 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 370011602 | Infineon Technologies |
Description: IC MCU 16BIT 64KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 15x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART Peripherals: DMA, LVD, POR, WDT Supplier Device Package: 64-LQFP (12x12) Part Status: Obsolete Number of I/O: 51 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IKP04N60TXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 8A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Supplier Device Package: PG-TO220-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/164ns Switching Energy: 143µJ Test Condition: 400V, 4A, 47Ohm, 15V Gate Charge: 27 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 42 W |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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IPW65R095C7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 24A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: PG-TO247-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V |
на замовлення 473 шт: термін постачання 21-31 дні (днів) |
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IPP029N06NAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 24A/100A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 75µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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IDW15G120C5BFKSA1 | Infineon Technologies |
Description: DIODE ARR SIC 1200V 24A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 24A (DC) Supplier Device Package: PG-TO247-3-41 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A Current - Reverse Leakage @ Vr: 62 µA @ 1200 V |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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ISC026N03L5SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 24A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
на замовлення 21409 шт: термін постачання 21-31 дні (днів) |
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IQE022N06LM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER-TRANSISTOR 60VPackaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 48µA Supplier Device Package: PG-WHTFN-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
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IQE022N06LM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER-TRANSISTOR 60VPackaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 48µA Supplier Device Package: PG-WHTFN-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V |
на замовлення 3304 шт: термін постачання 21-31 дні (днів) |
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IQE022N06LM5SCATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER-TRANSISTOR 60VPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 48µA Supplier Device Package: PG-WHSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
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IQE022N06LM5SCATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER-TRANSISTOR 60VPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 48µA Supplier Device Package: PG-WHSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V |
на замовлення 5006 шт: термін постачання 21-31 дні (днів) |
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IRFB7534PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V |
на замовлення 7894 шт: термін постачання 21-31 дні (днів) |
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IRFB7734PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 183A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 183A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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IRFB7545PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 95A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 57A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 25 V |
на замовлення 10322 шт: термін постачання 21-31 дні (днів) |
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FM25L04B-DGTR | Infineon Technologies |
Description: IC FRAM 4KBIT SPI 20MHZ 8DFNDigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 8-DFN (4x4.5) Memory Format: FRAM Clock Frequency: 20 MHz Technology: FRAM (Ferroelectric RAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Packaging: Tape & Reel (TR) Memory Organization: 512 x 8 Memory Interface: SPI |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FM25L04B-DGTR | Infineon Technologies |
Description: IC FRAM 4KBIT SPI 20MHZ 8DFNDigiKey Programmable: Not Verified Memory Organization: 512 x 8 Memory Interface: SPI Part Status: Active Supplier Device Package: 8-DFN (4x4.5) Memory Format: FRAM Clock Frequency: 20 MHz Technology: FRAM (Ferroelectric RAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2048 шт: термін постачання 21-31 дні (днів) |
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TD60N16SOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 90A MODULEVoltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 90 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 55 A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A @ 50Hz Current - Gate Trigger (Igt) (Max): 100 mA Current - Hold (Ih) (Max): 250 mA Structure: Series Connection - SCR/Diode Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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DD260N16KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1.6KV 260ACurrent - Reverse Leakage @ Vr: 30 mA @ 1600 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A Voltage - DC Reverse (Vr) (Max): 1600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Module Current - Average Rectified (Io) (per Diode): 260A Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BTS462TAKSA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5Qualification: AEC-Q100 Grade: Automotive Output Type: N-Channel Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Features: Auto Restart Packaging: Tube Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: PG-TO252-5-11 Ratio - Input:Output: 1:1 Current - Output (Max): 3.5A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 5V ~ 34V Input Type: Non-Inverting Part Status: Active Rds On (Typ): 70mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. |
| IDV08E65D2XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 650V 8A PGTO2202
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO220-2 Full Pack
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE STANDARD 650V 8A PGTO2202
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO220-2 Full Pack
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| ICE3AR10080CJZXKLA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Power (Watts): 22 W
Part Status: Active
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Power (Watts): 22 W
Part Status: Active
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| ICE3AR1580VJZXKLA1 |
![]() |
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 57 W
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 57 W
Part Status: Active
на замовлення 1903 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.80 грн |
| 10+ | 123.65 грн |
| 50+ | 106.56 грн |
| 100+ | 95.02 грн |
| 250+ | 89.77 грн |
| 500+ | 86.59 грн |
| 1000+ | 82.61 грн |
| ICE3AR4780VJZXKLA1 |
![]() |
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 31 W
Part Status: Active
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Power (Watts): 31 W
Part Status: Active
Voltage - Start Up: 17 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.41 грн |
| 10+ | 91.34 грн |
| 50+ | 78.11 грн |
| 100+ | 69.49 грн |
| 250+ | 65.44 грн |
| 500+ | 63.01 грн |
| ICE3AR1080VJZXKLA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 71 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Active
Power (Watts): 71 W
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| CY7C1345S-100AXCT |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Memory Organization: 128K x 36
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Memory Organization: 128K x 36
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
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| CY7C1325S-100AXCT |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Memory Organization: 256K x 18
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PAR 100TQFP
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Memory Organization: 256K x 18
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
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| IM111X3Q1BAUMA1 |
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Виробник: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Tape & Reel (TR)
Description: CIPOS NANO PG-IQFN-37
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IM111X3Q1BAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Cut Tape (CT)
Description: CIPOS NANO PG-IQFN-37
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Cut Tape (CT)
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В кошику
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| IM111X3Q1BAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Bulk
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Description: CIPOS NANO PG-IQFN-37
Configuration: H-Bridge
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 39-PowerVQFN
Packaging: Bulk
Voltage: 250 V
Current: 12 A
Part Status: Active
Voltage - Isolation: 1500Vrms
на замовлення 2117 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 52+ | 412.79 грн |
| PEF 20256 E V3.2-G |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 323FCLBGA
Power (Watts): 3 W
Part Status: Obsolete
Supplier Device Package: 323-FCLBGA
Current - Supply: 200mA
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Interface: HDLC, PPP, SS7, TMA
Function: Multichannel Network Interface Controller (MUNICH)
Mounting Type: Surface Mount
Package / Case: 323-BBGA, FCBGA
Packaging: Tray
Description: IC TELECOM INTERFACE 323FCLBGA
Power (Watts): 3 W
Part Status: Obsolete
Supplier Device Package: 323-FCLBGA
Current - Supply: 200mA
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Interface: HDLC, PPP, SS7, TMA
Function: Multichannel Network Interface Controller (MUNICH)
Mounting Type: Surface Mount
Package / Case: 323-BBGA, FCBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику
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| BSM75GD120DLCBOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 125A 500W
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 92 µA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Part Status: Not For New Designs
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Description: IGBT MOD 1200V 125A 500W
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 92 µA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Part Status: Not For New Designs
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
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| XMC4200F64F256BAXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Part Status: Active
Number of I/O: 35
DigiKey Programmable: Not Verified
на замовлення 523 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 533.91 грн |
| 10+ | 398.10 грн |
| 25+ | 368.95 грн |
| 160+ | 308.43 грн |
| 320+ | 298.64 грн |
| XMC1401F064F0128AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1900 шт
В кошику
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| XMC1401F064F0128AAXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 657 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.85 грн |
| 10+ | 136.26 грн |
| 25+ | 124.65 грн |
| 100+ | 105.01 грн |
| 250+ | 99.30 грн |
| 500+ | 96.34 грн |
| SIGC100T60R3EX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Description: IGBT 3 CHIP 600V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
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| BSZ0994NSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8TSDSON-25
Part Status: Active
Supplier Device Package: PG-TSDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 30V 13A 8TSDSON-25
Part Status: Active
Supplier Device Package: PG-TSDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| BSZ0994NSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8TSDSON-25
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 13A 8TSDSON-25
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8-25
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
на замовлення 4962 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.56 грн |
| 10+ | 52.98 грн |
| 100+ | 34.89 грн |
| 500+ | 25.44 грн |
| 1000+ | 23.09 грн |
| 2000+ | 21.11 грн |
| CY7C63823-SXCT |
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Виробник: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 24-SOIC
Part Status: Last Time Buy
Supplier Device Package: 24-SOIC
Standards: USB 2.0
Protocol: USB
Current - Supply: 40mA
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Interface: GPIO, SPI
Function: Controller
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC USB PERIPHERAL CTRLR 24-SOIC
Part Status: Last Time Buy
Supplier Device Package: 24-SOIC
Standards: USB 2.0
Protocol: USB
Current - Supply: 40mA
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Interface: GPIO, SPI
Function: Controller
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| IFX91041EJV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK 3.3V 1.8A DSO-8-27
Frequency - Switching: 370kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: PG-DSO-8-27
Topology: Buck
Voltage - Input (Max): 45V
Description: IC REG BUCK 3.3V 1.8A DSO-8-27
Frequency - Switching: 370kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: PG-DSO-8-27
Topology: Buck
Voltage - Input (Max): 45V
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| TLE4997A8DE0300XUMA1 |
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Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-TDSO-8-1
Current - Supply (Max): 10mA
Current - Output (Max): 1mA
Sensing Range: ±50mT ~ ±200mT
Resolution: 12 b
Technology: Hall Effect
Bandwidth: 1.32kHz
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Axis: Single
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Programmable
Part Status: Active
Packaging: Cut Tape (CT)
Description: MAG SWITCH SPEED SENSOR 8TDSO
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: PG-TDSO-8-1
Current - Supply (Max): 10mA
Current - Output (Max): 1mA
Sensing Range: ±50mT ~ ±200mT
Resolution: 12 b
Technology: Hall Effect
Bandwidth: 1.32kHz
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Axis: Single
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Programmable
Part Status: Active
Packaging: Cut Tape (CT)
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 336.31 грн |
| 5+ | 290.27 грн |
| 10+ | 277.96 грн |
| 25+ | 247.09 грн |
| 50+ | 237.69 грн |
| 100+ | 229.08 грн |
| 500+ | 210.00 грн |
| 62-0170PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 50V 3A 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET N-CH 50V 3A 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| ICE2A280ZXKLA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 50 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 50 W
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| DD710N16KHPSA2 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 1600V 710A MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 710A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 2500 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Description: DIODE MOD GP 1600V 710A MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 710A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 2500 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
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| CY8C5248LTI-030 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 36
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 36
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| BTF3050EJXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Qualification: AEC-Q100
Grade: Automotive
Rds On (Typ): 45mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
Input Type: Non-Inverting
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Qualification: AEC-Q100
Grade: Automotive
Rds On (Typ): 45mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
Input Type: Non-Inverting
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Мінімальне замовлення: 3000 шт
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| BTF3050EJXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Qualification: AEC-Q100
Grade: Automotive
Input Type: Non-Inverting
Rds On (Typ): 45mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Qualification: AEC-Q100
Grade: Automotive
Input Type: Non-Inverting
Rds On (Typ): 45mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Current - Output (Max): 4A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
на замовлення 919 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.54 грн |
| 10+ | 66.56 грн |
| 25+ | 60.29 грн |
| 100+ | 50.19 грн |
| 250+ | 47.13 грн |
| 500+ | 45.28 грн |
| BSM300GA120DLCSHOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 570A 2250W
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 570 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MOD 1200V 570A 2250W
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 570 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 18401.73 грн |
| BSM300GA120DLCSHOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 570A 2250W
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 570 A
Part Status: Last Time Buy
Description: IGBT MOD 1200V 570A 2250W
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 570 A
Part Status: Last Time Buy
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| BSM300GA120DN2HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 430A 2500W MOD
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 mA
Power - Max: 2500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 430 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 300A
Operating Temperature: 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 1200V 430A 2500W MOD
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Current - Collector Cutoff (Max): 5.6 mA
Power - Max: 2500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 430 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 300A
Operating Temperature: 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| TLE9262QXXUMA2 |
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Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Supplier Device Package: PG-VQFN-48-31
Applications: Automotive
Voltage - Supply: 28V
Interface: SPI
Mounting Type: Surface Mount
Description: IC INTERFACE SPECIALIZED 48VQFN
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Supplier Device Package: PG-VQFN-48-31
Applications: Automotive
Voltage - Supply: 28V
Interface: SPI
Mounting Type: Surface Mount
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Мінімальне замовлення: 2500 шт
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| AIHD15N60RFATMA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
на замовлення 8515 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 166+ | 119.20 грн |
| CY25560SXCT |
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Виробник: Infineon Technologies
Description: IC CLK/FREQ SYNTH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK/FREQ SYNTH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 2500 шт
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| CY8C4025LQS-S411T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
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Мінімальне замовлення: 2500 шт
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| CY8C4024LQS-S411T |
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Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
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Мінімальне замовлення: 2500 шт
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| CY8C4024LQS-S411 |
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Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 19
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount, Wettable Flank
Description: PSOC4 - GENERAL
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 19
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount, Wettable Flank
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 290.59 грн |
| 10+ | 214.09 грн |
| 25+ | 197.54 грн |
| 100+ | 169.56 грн |
| CY8C4045LQS-S411T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Number of I/O: 19
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Number of I/O: 19
Part Status: Active
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY8C4025LQS-S411 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
Description: IC MCU 32BIT 32KB FLASH 24UFQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 1x7/1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 19
на замовлення 4894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 341.73 грн |
| 10+ | 250.20 грн |
| 25+ | 230.61 грн |
| 100+ | 196.14 грн |
| 490+ | 180.81 грн |
| 980+ | 175.99 грн |
| 1470+ | 170.73 грн |
| 2940+ | 167.24 грн |
| FF900R12IP4DBOSA2 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5100 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| 370015736 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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| 370014321 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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| 370011602 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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| IKP04N60TXKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 143µJ
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
Description: IGBT TRENCH FS 600V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 143µJ
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.21 грн |
| 50+ | 56.28 грн |
| 100+ | 50.23 грн |
| IPW65R095C7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 473 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 391.33 грн |
| 30+ | 214.01 грн |
| 120+ | 178.10 грн |
| IPP029N06NAKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 24A/100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
Description: MOSFET N-CH 60V 24A/100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
на замовлення 68 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 211.55 грн |
| 50+ | 102.42 грн |
| IDW15G120C5BFKSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SIC 1200V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24A (DC)
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Current - Reverse Leakage @ Vr: 62 µA @ 1200 V
Description: DIODE ARR SIC 1200V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24A (DC)
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Current - Reverse Leakage @ Vr: 62 µA @ 1200 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 805.13 грн |
| 30+ | 618.83 грн |
| 120+ | 553.70 грн |
| ISC026N03L5SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Description: MOSFET N-CH 30V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 21409 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.56 грн |
| 10+ | 55.44 грн |
| 100+ | 37.18 грн |
| 500+ | 26.25 грн |
| 1000+ | 23.01 грн |
| 2000+ | 22.33 грн |
| IQE022N06LM5CGSCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHTFN-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHTFN-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| IQE022N06LM5CGSCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHTFN-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHTFN-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
на замовлення 3304 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.54 грн |
| 10+ | 192.75 грн |
| 100+ | 135.85 грн |
| 500+ | 108.18 грн |
| IQE022N06LM5SCATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| IQE022N06LM5SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Description: OPTIMOS 5 POWER-TRANSISTOR 60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-WHSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
на замовлення 5006 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 249.52 грн |
| 10+ | 157.00 грн |
| 100+ | 109.55 грн |
| 500+ | 83.80 грн |
| 1000+ | 83.67 грн |
| IRFB7534PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
на замовлення 7894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.42 грн |
| 50+ | 119.06 грн |
| 100+ | 107.60 грн |
| 500+ | 82.14 грн |
| 1000+ | 76.08 грн |
| 2000+ | 71.00 грн |
| 5000+ | 65.29 грн |
| IRFB7734PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 183A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
Description: MOSFET N-CH 75V 183A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 182.10 грн |
| IRFB7545PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 95A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 57A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 25 V
Description: MOSFET N-CH 60V 95A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 57A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 25 V
на замовлення 10322 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.71 грн |
| 50+ | 48.70 грн |
| 100+ | 43.37 грн |
| 500+ | 31.92 грн |
| 1000+ | 29.09 грн |
| 2000+ | 26.71 грн |
| 5000+ | 23.74 грн |
| 10000+ | 22.18 грн |
| FM25L04B-DGTR |
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Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 20MHZ 8DFN
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Memory Organization: 512 x 8
Memory Interface: SPI
Description: IC FRAM 4KBIT SPI 20MHZ 8DFN
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Memory Organization: 512 x 8
Memory Interface: SPI
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FM25L04B-DGTR |
![]() |
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 20MHZ 8DFN
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC FRAM 4KBIT SPI 20MHZ 8DFN
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2048 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.11 грн |
| 10+ | 107.83 грн |
| 25+ | 104.71 грн |
| 50+ | 96.07 грн |
| 100+ | 93.86 грн |
| 250+ | 90.94 грн |
| 500+ | 87.29 грн |
| 1000+ | 85.14 грн |
| TD60N16SOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 90A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 90 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 55 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 250 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 1.6KV 90A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 90 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 55 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 250 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2007.01 грн |
| DD260N16KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.6KV 260A
Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 260A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: DIODE MODULE GP 1.6KV 260A
Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 260A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 12100.18 грн |
| BTS462TAKSA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Qualification: AEC-Q100
Grade: Automotive
Output Type: N-Channel
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Features: Auto Restart
Packaging: Tube
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-5-11
Ratio - Input:Output: 1:1
Current - Output (Max): 3.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Part Status: Active
Rds On (Typ): 70mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Qualification: AEC-Q100
Grade: Automotive
Output Type: N-Channel
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Features: Auto Restart
Packaging: Tube
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-5-11
Ratio - Input:Output: 1:1
Current - Output (Max): 3.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Part Status: Active
Rds On (Typ): 70mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.





























