Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123023) > Сторінка 582 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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S25FL512SAGBHBA10 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGAPackaging: Tray Memory Organization: 64M x 8 Memory Interface: SPI - Quad I/O Part Status: Active Supplier Device Package: 24-BGA (8x6) Memory Format: FLASH Clock Frequency: 133 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified |
на замовлення 162 шт: термін постачання 21-31 дні (днів) |
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CY95F636KNPMC-G-UNE2 | Infineon Technologies |
Description: IC MCU 8BIT 36KB 32LQFPNumber of I/O: 29 Part Status: Active Supplier Device Package: 32-LQFP (7x7) Peripherals: LVD, LVR, POR, PWM, WDT Connectivity: I2C, LINbus, SIO, UART/USART Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x8/10b Core Processor: F²MC-8FX Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1K x 8 Program Memory Size: 36KB (36K x 8) Speed: 16.25MHz Mounting Type: Surface Mount Package / Case: 32-LQFP Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY95F698KNPMC-G-UNE2 | Infineon Technologies |
Description: IC MCU 8BIT 60KB FLASH 48LQFPRAM Size: 2K x 8 Program Memory Size: 60KB (60K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 45 Part Status: Active Supplier Device Package: 48-LQFP (7x7) Peripherals: LVD, POR, PWM, WDT Connectivity: I2C, LINbus, SIO, UART/USART Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 12x8/10b Core Processor: F²MC-8FX Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY95F636HNPMC-G-UNERE2 | Infineon Technologies |
Description: IC MM MCU 32LQFPDigiKey Programmable: Not Verified Number of I/O: 28 Part Status: Active Supplier Device Package: 32-LQFP (7x7) Peripherals: POR, PWM, WDT Connectivity: I2C, LINbus, SIO, UART/USART Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x8/10b Core Processor: F²MC-8FX Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1K x 8 Program Memory Size: 36KB (36K x 8) Speed: 16.25MHz Mounting Type: Surface Mount Package / Case: 32-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY95F636HNPMC-G-UNERE2 | Infineon Technologies |
Description: IC MM MCU 32LQFPNumber of I/O: 28 Part Status: Active Supplier Device Package: 32-LQFP (7x7) Peripherals: POR, PWM, WDT Connectivity: I2C, LINbus, SIO, UART/USART Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x8/10b Core Processor: F²MC-8FX Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1K x 8 Program Memory Size: 36KB (36K x 8) Speed: 16.25MHz Mounting Type: Surface Mount DigiKey Programmable: Not Verified Package / Case: 32-LQFP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FL512SAGBAEA10 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGAPackaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
на замовлення 225 шт: термін постачання 21-31 дні (днів) |
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S25FL512SAGBHBA13 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGAPackaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Grade: Automotive Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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S25FL512SAGBHBA13 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGAPackaging: Cut Tape (CT) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Grade: Automotive Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2152 шт: термін постачання 21-31 дні (днів) |
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CY9AF112KPMC-G-101-JNE1 | Infineon Technologies |
Description: IC MCU 32BIT 160KB 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 8x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Part Status: Active Number of I/O: 36 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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CY9AF112KPMC-G-105-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 160KB 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 8x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Part Status: Active Number of I/O: 36 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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CY23S05SXC-1H | Infineon Technologies |
Description: IC FANOUT BUFFER 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 1939 шт: термін постачання 21-31 дні (днів) |
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CY23S05SXC-1HT | Infineon Technologies |
Description: IC FANOUT BUFFER 8SOICDigiKey Programmable: Not Verified Number of Circuits: 1 Part Status: Active Divider/Multiplier: No/No PLL: Yes Supplier Device Package: 8-SOIC Differential - Input:Output: No/No Ratio - Input:Output: 1:5 Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C Input: LVCMOS, LVTTL Type: Fanout Buffer (Distribution), Zero Delay Buffer Frequency - Max: 133.33MHz Output: LVCMOS Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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CY23S05SXI-1T | Infineon Technologies |
Description: IC FANOUT BUFFER 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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CY23S09ZXC-1HT | Infineon Technologies |
Description: IC FANOUT BUFFER 16TSSOPDigiKey Programmable: Not Verified Number of Circuits: 1 Part Status: Active Divider/Multiplier: No/No PLL: Yes with Bypass Supplier Device Package: 16-TSSOP Differential - Input:Output: No/No Ratio - Input:Output: 1:9 Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C Input: LVCMOS, LVTTL Type: Fanout Buffer (Distribution), Zero Delay Buffer Frequency - Max: 133.33MHz Output: LVCMOS Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TT570N16KOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 1.6KV 900A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 600 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Active Current - On State (It (RMS)) (Max): 900 A Voltage - Off State: 1.6 kV |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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S29GL256S90DHSS30 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4127AXI-S445 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64TQFPDigiKey Programmable: Not Verified Number of I/O: 54 Part Status: Active Supplier Device Package: 64-TQFP (14x14) Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 180 шт В кошику од. на суму грн. | ||||||||||||||
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FS200R07N3E4RBOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 200A 600W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 600 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
на замовлення 260 шт: термін постачання 21-31 дні (днів) |
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TLE72702DATMA1 | Infineon Technologies |
Description: IC REG LIN 5V 300MA PG-TO252-5Current - Quiescent (Iq): 30 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Tape & Reel (TR) Current - Supply (Max): 40 µA Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 0.5V @ 200mA PSRR: 60dB (100Hz) Part Status: Active Control Features: Delay, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-TO252-5 Number of Regulators: 1 Voltage - Input (Max): 42V Qualification: AEC-Q100 Grade: Automotive |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE72702DATMA1 | Infineon Technologies |
Description: IC REG LIN 5V 300MA PG-TO252-5Current - Supply (Max): 40 µA Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 0.5V @ 200mA PSRR: 60dB (100Hz) Part Status: Active Control Features: Delay, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-TO252-5 Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 30 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 4300 шт: термін постачання 21-31 дні (днів) |
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CY7C1545KV18-400BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAPackaging: Bulk Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
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IRFR1018EPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 56A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BF888H6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 4V 47GHZ PG SOT-343Part Status: Active Supplier Device Package: PG-SOT343-4-2 Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Frequency - Transition: 47GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V Voltage - Collector Emitter Breakdown (Max): 4V Current - Collector (Ic) (Max): 30mA Power - Max: 160mW Gain: 27dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BF888H6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 4V 47GHZ PG SOT-343Current - Collector (Ic) (Max): 30mA Power - Max: 160mW Gain: 27dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Packaging: Bulk Part Status: Active Supplier Device Package: PG-SOT343-4-2 Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Frequency - Transition: 47GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V Voltage - Collector Emitter Breakdown (Max): 4V |
на замовлення 375000 шт: термін постачання 21-31 дні (днів) |
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CY62147GE30-45ZSXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 249 шт: термін постачання 21-31 дні (днів) |
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CY62147GE30-45ZSXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1350 шт В кошику од. на суму грн. | ||||||||||||||
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TLE9854QXXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 150°C (TJ) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: ARM® Cortex®-M0 Data Converters: A/D 9x8b, 12x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V Connectivity: LINbus, SSC, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9854QXXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 150°C (TJ) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: ARM® Cortex®-M0 Data Converters: A/D 9x8b, 12x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V Connectivity: LINbus, SSC, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4570 шт: термін постачання 21-31 дні (днів) |
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IDH05SG60CXKSA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 5A TO220-2-1Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Last Time Buy Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-1 Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 110pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
| BSM150GB120DLCHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 300A 1250W Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 11 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 1250 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 300 A Part Status: Last Time Buy Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A Operating Temperature: -40°C ~ 125°C |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||
| BSM150GB120DN2HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 210A 1250W Input Capacitance (Cies) @ Vce: 11 nF @ 25 V Current - Collector Cutoff (Max): 2.8 mA Power - Max: 1250 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 210 A Part Status: Last Time Buy Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A Operating Temperature: 150°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BSM150GB120DN2FE325HOSA1 | Infineon Technologies |
Description: IGBT MOD Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CY9BF516RPMC-GE1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB 120LQFPPackaging: Tray Package / Case: 120-LQFP Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 512KB (512K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 120-LQFP (16x16) Part Status: Active Number of I/O: 103 |
товару немає в наявності |
Мінімальне замовлення: 840 шт В кошику од. на суму грн. | ||||||||||||||
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IRFZ34NSTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 29A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KIT6W12VP7950VTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICE5QSAGPart Status: Active Packaging: Bulk Accessory Type: Interface Board |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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TZ425N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 800A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 510 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 1.6 kV |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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IPD60R2K0C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 2.4A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Power Dissipation (Max): 22.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IPD60R2K0C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 2.4A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Power Dissipation (Max): 22.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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| MB90561APF-G-434E1 | Infineon Technologies |
Description: IC MICROCONTROLLER 64QFPNumber of I/O: 51 Part Status: Obsolete Supplier Device Package: 64-QFP (12x12) Peripherals: POR, WDT Connectivity: UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 8x8/10b Core Processor: F²MC-16LX Program Memory Type: Mask ROM Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1K x 8 Program Memory Size: 32KB (32K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MB89191APF-G-347-ER-RE1 | Infineon Technologies |
Description: IC MCU 8BIT 4KB MROM 28SOPNumber of I/O: 16 Part Status: Obsolete Supplier Device Package: 28-SOP Peripherals: POR, WDT Connectivity: Serial I/O Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Core Size: 8-Bit Data Converters: A/D 8x8b Core Processor: F²MC-8L Program Memory Type: Mask ROM Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 128 x 8 Program Memory Size: 4KB (4K x 8) Speed: 4.2MHz Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MB90467PFM-G-347-JNE1 | Infineon Technologies |
Description: IC MICROCONTROLLER 64LQFPPackage / Case: 64-LQFP Packaging: Tray Number of I/O: 51 Part Status: Obsolete Supplier Device Package: 64-QFP (12x12) Peripherals: POR, PWM, WDT Connectivity: UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 8x8/10b Core Processor: F²MC-16LX Program Memory Type: Mask ROM Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 64KB (64K x 8) Speed: 16MHz Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MB90673PF-G-347-BND-B | Infineon Technologies |
Description: IC MCU 16BIT 48KB MROM 80PQFP Number of I/O: 65 Part Status: Obsolete Supplier Device Package: 80-QFP (14x20) Peripherals: POR, WDT Connectivity: EBI/EMI, SCI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 8x8/10b Core Processor: F²MC-16L Program Memory Type: Mask ROM Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 48KB (48K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MB90673PF-G-347-BND-BE1 | Infineon Technologies |
Description: IC MICROCONTROLLER 80QFP Number of I/O: 65 Part Status: Obsolete Supplier Device Package: 80-QFP (14x20) Peripherals: POR, WDT Connectivity: EBI/EMI, SCI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 8x8/10b Core Processor: F²MC-16L Program Memory Type: Mask ROM Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 48KB (48K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MB89657ARPF-G-347-BNDE1 | Infineon Technologies |
Description: IC MCU 8BIT 32KB MROM 80PQFP Number of I/O: 48 Part Status: Obsolete Supplier Device Package: 80-QFP (14x20) Peripherals: LCD, POR, PWM, WDT Connectivity: Serial I/O Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Core Size: 8-Bit Data Converters: A/D 8x8b Core Processor: F²MC-8L Program Memory Type: Mask ROM Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1K x 8 Program Memory Size: 32KB (32K x 8) Speed: 10MHz Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SP36203431DQAC | Infineon Technologies |
Description: ENGINEER CHARGE NON-RECURRING Packaging: Electronic Delivery Type: License Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SP36203431DQBC | Infineon Technologies |
Description: ENGINEER CHARGE NON-RECURRING Packaging: Electronic Delivery Type: License Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SP36203431DQCC | Infineon Technologies |
Description: ENGINEER CHARGE NON-RECURRING Packaging: Electronic Delivery Type: License Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FF650R17IE4DPB2BOSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 650AInput Capacitance (Cies) @ Vce: 54 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 650 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A Operating Temperature: -40°C ~ 150°C Configuration: 2 Independent Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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S26HS01GTGABHB030 | Infineon Technologies |
Description: IC FLASH 1GBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (8x8) Part Status: Active Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 5.45 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
на замовлення 78 шт: термін постачання 21-31 дні (днів) |
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IPD90N06S4L05ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-31Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IPD90N06S4L05ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-31Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2231 шт: термін постачання 21-31 дні (днів) |
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IPD90N06S4L06ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-31Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 90A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 40µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IPD90N06S4L06ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-31Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 90A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 40µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3221 шт: термін постачання 21-31 дні (днів) |
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IPB90N06S404ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 90µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1272 шт: термін постачання 21-31 дні (днів) |
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AUIRLS3036TRL | Infineon Technologies |
Description: MOSFET N-CH 60V 195A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRLS3036-7P | Infineon Technologies |
Description: MOSFET N-CH 60V 240A D2PAKPackaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRLS4030TRL | Infineon Technologies |
Description: MOSFET N-CH 100V 180A D2PAKQualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 370W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| AUIRLS4030-7P | Infineon Technologies |
Description: MOSFET N-CH 100V 190A D2PAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK (7-Lead) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IRLS4030PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 180A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRLS4030-7TRL | Infineon Technologies |
Description: MOSFET N-CH 100V 190A D2PAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK (7-Lead) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| S25FL512SAGBHBA10 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O
Part Status: Active
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O
Part Status: Active
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
на замовлення 162 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 546.31 грн |
| 10+ | 489.14 грн |
| 25+ | 474.23 грн |
| 50+ | 434.47 грн |
| 100+ | 423.93 грн |
| CY95F636KNPMC-G-UNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 36KB 32LQFP
Number of I/O: 29
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Peripherals: LVD, LVR, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16.25MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Tray
Description: IC MCU 8BIT 36KB 32LQFP
Number of I/O: 29
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Peripherals: LVD, LVR, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16.25MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Tray
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| CY95F698KNPMC-G-UNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 48LQFP
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 45
Part Status: Active
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC MCU 8BIT 60KB FLASH 48LQFP
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 45
Part Status: Active
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
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| CY95F636HNPMC-G-UNERE2 |
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Виробник: Infineon Technologies
Description: IC MM MCU 32LQFP
DigiKey Programmable: Not Verified
Number of I/O: 28
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Peripherals: POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16.25MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Tape & Reel (TR)
Description: IC MM MCU 32LQFP
DigiKey Programmable: Not Verified
Number of I/O: 28
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Peripherals: POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16.25MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Tape & Reel (TR)
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| CY95F636HNPMC-G-UNERE2 |
![]() |
Виробник: Infineon Technologies
Description: IC MM MCU 32LQFP
Number of I/O: 28
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Peripherals: POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16.25MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 32-LQFP
Packaging: Cut Tape (CT)
Description: IC MM MCU 32LQFP
Number of I/O: 28
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Peripherals: POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16.25MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 32-LQFP
Packaging: Cut Tape (CT)
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| S25FL512SAGBAEA10 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5029.93 грн |
| 10+ | 4469.56 грн |
| 25+ | 4323.20 грн |
| 50+ | 3954.95 грн |
| 100+ | 3854.54 грн |
| S25FL512SAGBHBA13 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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Мінімальне замовлення: 2500 шт
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| S25FL512SAGBHBA13 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2152 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 509.89 грн |
| 10+ | 456.31 грн |
| 25+ | 442.38 грн |
| 50+ | 405.28 грн |
| 100+ | 395.47 грн |
| 250+ | 382.61 грн |
| 500+ | 373.20 грн |
| CY9AF112KPMC-G-101-JNE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 36
Description: IC MCU 32BIT 160KB 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 36
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Мінімальне замовлення: 2500 шт
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| CY9AF112KPMC-G-105-JNE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 36
Description: IC MCU 32BIT 160KB 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 36
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| CY23S05SXC-1H |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 958.56 грн |
| 10+ | 727.78 грн |
| 97+ | 626.41 грн |
| 194+ | 569.02 грн |
| 291+ | 559.58 грн |
| 582+ | 545.74 грн |
| 1067+ | 526.87 грн |
| CY23S05SXC-1HT |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: No/No
PLL: Yes
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Frequency - Max: 133.33MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC FANOUT BUFFER 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: No/No
PLL: Yes
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Frequency - Max: 133.33MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| CY23S05SXI-1T |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| CY23S09ZXC-1HT |
![]() |
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 16-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Frequency - Max: 133.33MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC FANOUT BUFFER 16TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
Part Status: Active
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 16-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Frequency - Max: 133.33MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| TT570N16KOFHPSA2 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 18605.53 грн |
| S29GL256S90DHSS30 |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2600 шт
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| CY8C4127AXI-S445 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 54
Part Status: Active
Supplier Device Package: 64-TQFP (14x14)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Description: IC MCU 32BIT 128KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 54
Part Status: Active
Supplier Device Package: 64-TQFP (14x14)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 180 шт
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| FS200R07N3E4RBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 200A 600W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 650V 200A 600W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8675.87 грн |
| 10+ | 6599.98 грн |
| 100+ | 5690.22 грн |
| TLE72702DATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Delay, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Delay, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Qualification: AEC-Q100
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 90.47 грн |
| TLE72702DATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Delay, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Delay, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 4300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.58 грн |
| 10+ | 124.09 грн |
| 25+ | 113.51 грн |
| 100+ | 95.52 грн |
| 250+ | 90.27 грн |
| 500+ | 87.11 грн |
| 1000+ | 83.12 грн |
| CY7C1545KV18-400BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 14479.92 грн |
| IRFR1018EPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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| BF888H6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 4V 47GHZ PG SOT-343
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 47GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V
Voltage - Collector Emitter Breakdown (Max): 4V
Current - Collector (Ic) (Max): 30mA
Power - Max: 160mW
Gain: 27dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 4V 47GHZ PG SOT-343
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 47GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V
Voltage - Collector Emitter Breakdown (Max): 4V
Current - Collector (Ic) (Max): 30mA
Power - Max: 160mW
Gain: 27dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
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| BF888H6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 4V 47GHZ PG SOT-343
Current - Collector (Ic) (Max): 30mA
Power - Max: 160mW
Gain: 27dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 47GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V
Voltage - Collector Emitter Breakdown (Max): 4V
Description: RF TRANS NPN 4V 47GHZ PG SOT-343
Current - Collector (Ic) (Max): 30mA
Power - Max: 160mW
Gain: 27dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 47GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V
Voltage - Collector Emitter Breakdown (Max): 4V
на замовлення 375000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1059+ | 18.74 грн |
| CY62147GE30-45ZSXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.66 грн |
| 10+ | 125.44 грн |
| 25+ | 117.75 грн |
| 40+ | 106.99 грн |
| 135+ | 98.57 грн |
| CY62147GE30-45ZSXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1350 шт
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| TLE9854QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 187.74 грн |
| TLE9854QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 9x8b, 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 5.5V ~ 28V
Connectivity: LINbus, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 363.43 грн |
| 10+ | 267.37 грн |
| 25+ | 246.79 грн |
| 100+ | 210.30 грн |
| 250+ | 200.14 грн |
| 500+ | 194.03 грн |
| 1000+ | 185.89 грн |
| IDH05SG60CXKSA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO220-2-1
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Description: DIODE SIL CARB 600V 5A TO220-2-1
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
товару немає в наявності
Мінімальне замовлення: 500 шт
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| BSM150GB120DLCHOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A 1250W
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 300 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Description: IGBT MOD 1200V 300A 1250W
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 300 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
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Мінімальне замовлення: 10 шт
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| BSM150GB120DN2HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 210A 1250W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 2.8 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 210 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 1200V 210A 1250W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 2.8 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 210 A
Part Status: Last Time Buy
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| CY9BF516RPMC-GE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
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Мінімальне замовлення: 840 шт
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| IRFZ34NSTRRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET N-CH 55V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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| KIT6W12VP7950VTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5QSAG
Part Status: Active
Packaging: Bulk
Accessory Type: Interface Board
Description: EVAL BOARD FOR ICE5QSAG
Part Status: Active
Packaging: Bulk
Accessory Type: Interface Board
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2778.82 грн |
| TZ425N16KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 14648.08 грн |
| IPD60R2K0C6ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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Мінімальне замовлення: 2500 шт
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| IPD60R2K0C6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Description: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.82 грн |
| 10+ | 48.13 грн |
| 100+ | 31.60 грн |
| 500+ | 22.98 грн |
| 1000+ | 20.82 грн |
| MB90561APF-G-434E1 |
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Виробник: Infineon Technologies
Description: IC MICROCONTROLLER 64QFP
Number of I/O: 51
Part Status: Obsolete
Supplier Device Package: 64-QFP (12x12)
Peripherals: POR, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16LX
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Description: IC MICROCONTROLLER 64QFP
Number of I/O: 51
Part Status: Obsolete
Supplier Device Package: 64-QFP (12x12)
Peripherals: POR, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16LX
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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| MB89191APF-G-347-ER-RE1 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB MROM 28SOP
Number of I/O: 16
Part Status: Obsolete
Supplier Device Package: 28-SOP
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128 x 8
Program Memory Size: 4KB (4K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tray
Description: IC MCU 8BIT 4KB MROM 28SOP
Number of I/O: 16
Part Status: Obsolete
Supplier Device Package: 28-SOP
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128 x 8
Program Memory Size: 4KB (4K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tray
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| MB90467PFM-G-347-JNE1 |
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Виробник: Infineon Technologies
Description: IC MICROCONTROLLER 64LQFP
Package / Case: 64-LQFP
Packaging: Tray
Number of I/O: 51
Part Status: Obsolete
Supplier Device Package: 64-QFP (12x12)
Peripherals: POR, PWM, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16LX
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Description: IC MICROCONTROLLER 64LQFP
Package / Case: 64-LQFP
Packaging: Tray
Number of I/O: 51
Part Status: Obsolete
Supplier Device Package: 64-QFP (12x12)
Peripherals: POR, PWM, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16LX
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
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| MB90673PF-G-347-BND-B |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 48KB MROM 80PQFP
Number of I/O: 65
Part Status: Obsolete
Supplier Device Package: 80-QFP (14x20)
Peripherals: POR, WDT
Connectivity: EBI/EMI, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
Description: IC MCU 16BIT 48KB MROM 80PQFP
Number of I/O: 65
Part Status: Obsolete
Supplier Device Package: 80-QFP (14x20)
Peripherals: POR, WDT
Connectivity: EBI/EMI, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
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| MB90673PF-G-347-BND-BE1 |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER 80QFP
Number of I/O: 65
Part Status: Obsolete
Supplier Device Package: 80-QFP (14x20)
Peripherals: POR, WDT
Connectivity: EBI/EMI, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
Description: IC MICROCONTROLLER 80QFP
Number of I/O: 65
Part Status: Obsolete
Supplier Device Package: 80-QFP (14x20)
Peripherals: POR, WDT
Connectivity: EBI/EMI, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 8x8/10b
Core Processor: F²MC-16L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
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| MB89657ARPF-G-347-BNDE1 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB MROM 80PQFP
Number of I/O: 48
Part Status: Obsolete
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 10MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Bulk
Description: IC MCU 8BIT 32KB MROM 80PQFP
Number of I/O: 48
Part Status: Obsolete
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 10MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Bulk
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| SP36203431DQAC |
Виробник: Infineon Technologies
Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
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| SP36203431DQBC |
Виробник: Infineon Technologies
Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
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| SP36203431DQCC |
Виробник: Infineon Technologies
Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
Description: ENGINEER CHARGE NON-RECURRING
Packaging: Electronic Delivery
Type: License
Part Status: Obsolete
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| FF650R17IE4DPB2BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 650A
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MODULE 1700V 650A
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 34865.42 грн |
| S26HS01GTGABHB030 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Part Status: Active
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Part Status: Active
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2099.22 грн |
| 10+ | 1872.31 грн |
| 25+ | 1812.90 грн |
| 50+ | 1659.54 грн |
| IPD90N06S4L05ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 2500 шт
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| IPD90N06S4L05ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.13 грн |
| 10+ | 88.50 грн |
| 100+ | 60.11 грн |
| 500+ | 44.98 грн |
| 1000+ | 43.14 грн |
| IPD90N06S4L06ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 33.26 грн |
| IPD90N06S4L06ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3221 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.21 грн |
| 10+ | 75.22 грн |
| 100+ | 50.62 грн |
| 500+ | 37.61 грн |
| 1000+ | 34.72 грн |
| IPB90N06S404ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 90A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 228+ | 89.93 грн |
| AUIRLS3036TRL |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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| AUIRLS3036-7P |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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| AUIRLS4030TRL |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Description: MOSFET N-CH 100V 180A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
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| AUIRLS4030-7P |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
Description: MOSFET N-CH 100V 190A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
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| IRLS4030PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 100V 180A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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| AUIRLS4030-7TRL |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 190A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
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