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TT120N16SOFB01HPSA1 TT120N16SOFB01HPSA1 Infineon Technologies Infineon-TT120N-DS-v03_05-EN.pdf?fileId=5546d46148a8bbb90148d04e762d2e47 Description: SCR MODULE SB20-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+2478.16 грн
12+1725.02 грн
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2144425 Infineon Technologies Description: IC FLASH MEMORY
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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BSP50H6327XTSA1 BSP50H6327XTSA1 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189 Description: TRANS NPN DARL 45V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
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AUIRGP4062D-E AUIRGP4062D-E Infineon Technologies auirgp4062d.pdf?fileId=5546d462533600a4015355ba52cd1521 Description: IGBT 600V 48A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO247AD
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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CY3207-032 CY3207-032 Infineon Technologies Description: PSOC EMU POD FEET FOR 28-DIP
Packaging: Bulk
For Use With/Related Products: CY8C27443-24PI
Accessory Type: Emulator Foot Kit
Part Status: Discontinued at Digi-Key
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FSDC-FM3-A30-1-0024-01 Infineon Technologies Description: DEV KIT TOOL KIT PWR MGMT
Packaging: Box
Supplied Contents: Board(s)
Part Status: Obsolete
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BF2030-E6327 BF2030-E6327 Infineon Technologies INFNS10728-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Frequency: 1GHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.5dB
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
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TC222S16F133FACKXUMA1 TC222S16F133FACKXUMA1 Infineon Technologies Infineon-TC22xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed760156979fcbe72048 Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
1800+498.09 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
TC222S16F133FACKXUMA1 TC222S16F133FACKXUMA1 Infineon Technologies Infineon-TC22xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed760156979fcbe72048 Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
1+881.52 грн
10+667.61 грн
25+622.35 грн
100+537.35 грн
250+515.09 грн
500+501.67 грн
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FF1500R17IP5PBPSA1 FF1500R17IP5PBPSA1 Infineon Technologies Infineon-FF1500R17IP5P-DS-v03_00-EN.pdf?fileId=5546d46264a8de7e0164f4b761db4512 Description: IGBT MOD 1700V 1500A AGPRIME3+-5
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 5 mA
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+137300.22 грн
В кошику  од. на суму  грн.
IRAM136-0461G Infineon Technologies iram136-0461g.pdf?fileId=5546d462533600a4015355d680561846 Description: IC MOD PWR HYBRID 600V 4A MOTOR
Packaging: Tube
Package / Case: 23-PowerSSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 9.4 A
Voltage: 600 V
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AUIRFR4292TRL AUIRFR4292TRL Infineon Technologies auirfr4292.pdf?fileId=5546d462533600a4015355b59f38148b Description: MOSFET N-CH 250V 9.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 5.6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BF 770A E6327 BF 770A E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 12V 6GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 14.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
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TLE75620ESTXUMA1 TLE75620ESTXUMA1 Infineon Technologies Infineon-TLE75620-EST-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099f8f997933 Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+92.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLE75620ESTXUMA1 TLE75620ESTXUMA1 Infineon Technologies Infineon-TLE75620-EST-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099f8f997933 Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3724 шт:
термін постачання 21-31 дні (днів)
2+178.97 грн
10+128.35 грн
25+117.29 грн
100+98.71 грн
250+93.29 грн
500+90.03 грн
1000+85.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29JL032J60TFI320 S29JL032J60TFI320 Infineon Technologies Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
1+385.42 грн
10+329.72 грн
25+314.45 грн
40+287.99 грн
96+275.19 грн
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S29GL512T13TFNV10 S29GL512T13TFNV10 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 130 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S29GL512T13TFNV20 S29GL512T13TFNV20 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 130 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IRF630NSPBF IRF630NSPBF Infineon Technologies irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6 description Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
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CY9BF116NPMC-G-JNE2 CY9BF116NPMC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
1+766.13 грн
10+580.91 грн
25+541.80 грн
90+490.75 грн
В кошику  од. на суму  грн.
CY9BF116NPMC-GE1 CY9BF116NPMC-GE1 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421 Description: IC MCU 32BIT 512KB 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
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CY9BF115RPMC-G-JNE2 CY9BF115RPMC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 416KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
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CY9BF116NBGL-GK9E1 CY9BF116NBGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 544KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AF114LAPMC1-G-MNE2 CY9AF114LAPMC1-G-MNE2 Infineon Technologies Infineon-CY9AF111L_M_N_CY9AF112L_M_N_CY9AF114L_M_N_CY9AF115M_N_CY9AF116M_N_32-bit_Arm_Cortex_-M3_FM3_Microcontroller_Datasheet-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+540.85 грн
10+402.21 грн
25+372.45 грн
160+310.84 грн
320+300.84 грн
480+295.83 грн
960+283.75 грн
В кошику  од. на суму  грн.
CY9BF466RPMC-G-MNK1E2 CY9BF466RPMC-G-MNK1E2 Infineon Technologies Infineon-CY9B460R_Series_32-bit_Arm_Cortex_-MF4_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c81fb7ad201821501ca6c7d04 Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 100
DigiKey Programmable: Not Verified
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S25FL512SAGMFVG13 S25FL512SAGMFVG13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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KITDRIVER2EDS8265HTOBO1 KITDRIVER2EDS8265HTOBO1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: EVAL BOARD FOR 2EDS8265H
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDS8265H
Supplied Contents: Board(s)
Part Status: Active
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+3866.77 грн
В кошику  од. на суму  грн.
2EDS7165HXUMA1 2EDS7165HXUMA1 Infineon Technologies Infineon-2EDS7165H-DataSheet-v02_07-EN.pdf?fileId=8ac78c8c7c72fb9a017c73b1defd07a6 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 534 шт:
термін постачання 21-31 дні (днів)
2+175.83 грн
10+125.55 грн
25+114.62 грн
100+96.30 грн
250+90.92 грн
500+87.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
2EDL8024G3CXTMA1 2EDL8024G3CXTMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8024G3CXTMA1 2EDL8024G3CXTMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2875 шт:
термін постачання 21-31 дні (днів)
3+107.54 грн
10+75.59 грн
25+68.54 грн
100+57.08 грн
250+53.62 грн
500+51.54 грн
1000+49.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDL8023G3CXTMA1 2EDL8023G3CXTMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+52.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2EDL8023G3CXTMA1 2EDL8023G3CXTMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+107.54 грн
10+75.59 грн
25+68.54 грн
100+57.08 грн
250+53.62 грн
500+51.54 грн
1000+49.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDL8124G3CXTMA1 2EDL8124G3CXTMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8124G3CXTMA1 2EDL8124G3CXTMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 756 шт:
термін постачання 21-31 дні (днів)
4+88.70 грн
10+61.91 грн
25+56.03 грн
100+46.49 грн
250+43.57 грн
500+41.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2EDL8114GXUMA1 2EDL8114GXUMA1 Infineon Technologies Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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2EDL8114GXUMA1 2EDL8114GXUMA1 Infineon Technologies Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
247+91.19 грн
Мінімальне замовлення: 247
В кошику  од. на суму  грн.
2EDL8013GXUMA1 2EDL8013GXUMA1 Infineon Technologies Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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2EDL8012GXUMA1 2EDL8012GXUMA1 Infineon Technologies Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8112GXUMA1 2EDL8112GXUMA1 Infineon Technologies Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8113GXUMA1 2EDL8113GXUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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2EDL8014GXUMA1 2EDL8014GXUMA1 Infineon Technologies Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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2EDL8034G4BXTMA1 2EDL8034G4BXTMA1 Infineon Technologies Infineon-2EDL8034G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888fc1df217ecc Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 Infineon Technologies Infineon-2EDL8034G4C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888fc1e5cd7ecf Description: IC GATE DRVR HALF-BRIDGE 10VDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-10-2
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8033G3CXTMA1 2EDL8033G3CXTMA1 Infineon Technologies Infineon-2EDL8033G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf5fc37e81 Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8034G3CXTMA1 2EDL8034G3CXTMA1 Infineon Technologies Infineon-2EDL8034G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888fc1cfcf7ec5 Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
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2EDL7125GXUMA1 Infineon Technologies Description: INT. POWERSTAGE/DRIVER PG-WSON-1
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
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AUIRFS4010TRL AUIRFS4010TRL Infineon Technologies auirfs4010.pdf?fileId=5546d462533600a4015355b6a9e114c3 Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
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FZ1600R17KE3NOSA1 FZ1600R17KE3NOSA1 Infineon Technologies Infineon-FZ1600R17KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430462f4fe2 Description: IGBT MOD 1700V 2300A 8950W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 8950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+60591.20 грн
В кошику  од. на суму  грн.
CY3203-095 Infineon Technologies PSoC%20Dev.%20Tools%20Selector%20Guide.pdf Description: PSOC EMU POD FT 48-SSOP 1=5PCS
For Use With/Related Products: CY8C26643
Accessory Type: Emulator Foot Kit
Part Status: Obsolete
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S25FL512SAGBAEC13 S25FL512SAGBAEC13 Infineon Technologies Infineon-S25FL512S_Military_512_Mbit_64_Mbyte_3_0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7c4a3709f Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CYPM1311-48LDXI CYPM1311-48LDXI Infineon Technologies Infineon-EZ-PD_TM_PMG1-S3_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3 Description: IC MCU 32BIT 256KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (6x6)
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
1+409.76 грн
10+301.53 грн
25+278.32 грн
80+240.46 грн
230+226.69 грн
490+219.06 грн
980+209.86 грн
В кошику  од. на суму  грн.
S79FL01GSDSBHBC10 S79FL01GSDSBHBC10 Infineon Technologies Infineon-1_Gbit_(128_Mbyte)_S79FL01GS_Dual-Quad_SPI_NOR_Flash_Memory-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed144dd4d6d Description: IC FLASH 1GBIT SPI 80MHZ 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 676 шт:
термін постачання 21-31 дні (днів)
1+1059.71 грн
10+945.40 грн
25+915.64 грн
40+845.07 грн
80+830.19 грн
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S26HL512TFPBHV000 S26HL512TFPBHV000 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IPP60R190P6XKSA1 IPP60R190P6XKSA1 Infineon Technologies DS_IPP60R190P6_2_0_Approved.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f2e70c5013f37a818ba23e7 Description: MOSFET N-CH 600V 20.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 6661 шт:
термін постачання 21-31 дні (днів)
2+190.75 грн
50+102.76 грн
100+98.47 грн
500+75.14 грн
1000+69.41 грн
2000+67.87 грн
Мінімальне замовлення: 2
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IGLD60R190D1AUMA3 IGLD60R190D1AUMA3 Infineon Technologies Infineon-IGLD60R190D1-DataSheet-v02_11-EN.pdf?fileId=5546d46269e1c019016a6d78ff5e2aba Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
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IGLD60R190D1AUMA3 IGLD60R190D1AUMA3 Infineon Technologies Infineon-IGLD60R190D1-DataSheet-v02_11-EN.pdf?fileId=5546d46269e1c019016a6d78ff5e2aba Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
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S25HL01GTDPBHB030 S25HL01GTDPBHB030 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: Nor
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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CYALKIT-L02 Infineon Technologies Description: KIT EVALUATION
Packaging: Box
Utilized IC / Part: S6BL111A
Supplied Contents: Board(s)
Part Status: Obsolete
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CYALKIT-L01 Infineon Technologies Description: KIT EVALUATION
Packaging: Box
Utilized IC / Part: S6BL111A
Supplied Contents: Board(s)
Part Status: Obsolete
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TZ240N36KOFHPSA1 TZ240N36KOFHPSA1 Infineon Technologies Infineon-TZ240N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fd8bf4e00 Description: SCR MODULE 3.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 240 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 3.6 kV
товару немає в наявності
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TT120N16SOFB01HPSA1 Infineon-TT120N-DS-v03_05-EN.pdf?fileId=5546d46148a8bbb90148d04e762d2e47
TT120N16SOFB01HPSA1
Виробник: Infineon Technologies
Description: SCR MODULE SB20-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2478.16 грн
12+1725.02 грн
В кошику  од. на суму  грн.
2144425
Виробник: Infineon Technologies
Description: IC FLASH MEMORY
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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BSP50H6327XTSA1 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189
BSP50H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 45V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
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AUIRGP4062D-E auirgp4062d.pdf?fileId=5546d462533600a4015355ba52cd1521
AUIRGP4062D-E
Виробник: Infineon Technologies
Description: IGBT 600V 48A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO247AD
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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CY3207-032
CY3207-032
Виробник: Infineon Technologies
Description: PSOC EMU POD FEET FOR 28-DIP
Packaging: Bulk
For Use With/Related Products: CY8C27443-24PI
Accessory Type: Emulator Foot Kit
Part Status: Discontinued at Digi-Key
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FSDC-FM3-A30-1-0024-01
Виробник: Infineon Technologies
Description: DEV KIT TOOL KIT PWR MGMT
Packaging: Box
Supplied Contents: Board(s)
Part Status: Obsolete
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BF2030-E6327 INFNS10728-1.pdf?t.download=true&u=5oefqw
BF2030-E6327
Виробник: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Frequency: 1GHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.5dB
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
товару немає в наявності
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TC222S16F133FACKXUMA1 Infineon-TC22xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed760156979fcbe72048
TC222S16F133FACKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+498.09 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
TC222S16F133FACKXUMA1 Infineon-TC22xL-S-AURIX_Family-PB-v01_00-EN.pdf?fileId=5546d4625696ed760156979fcbe72048
TC222S16F133FACKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+881.52 грн
10+667.61 грн
25+622.35 грн
100+537.35 грн
250+515.09 грн
500+501.67 грн
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FF1500R17IP5PBPSA1 Infineon-FF1500R17IP5P-DS-v03_00-EN.pdf?fileId=5546d46264a8de7e0164f4b761db4512
FF1500R17IP5PBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1500A AGPRIME3+-5
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3+-5
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 5 mA
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+137300.22 грн
В кошику  од. на суму  грн.
IRAM136-0461G iram136-0461g.pdf?fileId=5546d462533600a4015355d680561846
Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 4A MOTOR
Packaging: Tube
Package / Case: 23-PowerSSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 9.4 A
Voltage: 600 V
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AUIRFR4292TRL auirfr4292.pdf?fileId=5546d462533600a4015355b59f38148b
AUIRFR4292TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 9.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 5.6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BF 770A E6327 fundamentals-of-power-semiconductors
BF 770A E6327
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 6GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 14.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
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TLE75620ESTXUMA1 Infineon-TLE75620-EST-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099f8f997933
TLE75620ESTXUMA1
Виробник: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+92.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLE75620ESTXUMA1 Infineon-TLE75620-EST-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099f8f997933
TLE75620ESTXUMA1
Виробник: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3724 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+178.97 грн
10+128.35 грн
25+117.29 грн
100+98.71 грн
250+93.29 грн
500+90.03 грн
1000+85.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29JL032J60TFI320 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J60TFI320
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+385.42 грн
10+329.72 грн
25+314.45 грн
40+287.99 грн
96+275.19 грн
В кошику  од. на суму  грн.
S29GL512T13TFNV10 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T13TFNV10
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 130 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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S29GL512T13TFNV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T13TFNV20
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 130 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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IRF630NSPBF description irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6
IRF630NSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
товару немає в наявності
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CY9BF116NPMC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF116NPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+766.13 грн
10+580.91 грн
25+541.80 грн
90+490.75 грн
В кошику  од. на суму  грн.
CY9BF116NPMC-GE1 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421
CY9BF116NPMC-GE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 83
товару немає в наявності
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CY9BF115RPMC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF115RPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF116NBGL-GK9E1
CY9BF116NBGL-GK9E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Active
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9AF114LAPMC1-G-MNE2 Infineon-CY9AF111L_M_N_CY9AF112L_M_N_CY9AF114L_M_N_CY9AF115M_N_CY9AF116M_N_32-bit_Arm_Cortex_-M3_FM3_Microcontroller_Datasheet-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb
CY9AF114LAPMC1-G-MNE2
Виробник: Infineon Technologies
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+540.85 грн
10+402.21 грн
25+372.45 грн
160+310.84 грн
320+300.84 грн
480+295.83 грн
960+283.75 грн
В кошику  од. на суму  грн.
CY9BF466RPMC-G-MNK1E2 Infineon-CY9B460R_Series_32-bit_Arm_Cortex_-MF4_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c81fb7ad201821501ca6c7d04
CY9BF466RPMC-G-MNK1E2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 100
DigiKey Programmable: Not Verified
товару немає в наявності
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S25FL512SAGMFVG13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGMFVG13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
KITDRIVER2EDS8265HTOBO1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
KITDRIVER2EDS8265HTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EDS8265H
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDS8265H
Supplied Contents: Board(s)
Part Status: Active
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3866.77 грн
В кошику  од. на суму  грн.
2EDS7165HXUMA1 Infineon-2EDS7165H-DataSheet-v02_07-EN.pdf?fileId=8ac78c8c7c72fb9a017c73b1defd07a6
2EDS7165HXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 534 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.83 грн
10+125.55 грн
25+114.62 грн
100+96.30 грн
250+90.92 грн
500+87.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
2EDL8024G3CXTMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8024G3CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
2EDL8024G3CXTMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8024G3CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2875 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+107.54 грн
10+75.59 грн
25+68.54 грн
100+57.08 грн
250+53.62 грн
500+51.54 грн
1000+49.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDL8023G3CXTMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8023G3CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+52.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2EDL8023G3CXTMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8023G3CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+107.54 грн
10+75.59 грн
25+68.54 грн
100+57.08 грн
250+53.62 грн
500+51.54 грн
1000+49.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDL8124G3CXTMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8124G3CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
2EDL8124G3CXTMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8124G3CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 756 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+88.70 грн
10+61.91 грн
25+56.03 грн
100+46.49 грн
250+43.57 грн
500+41.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2EDL8114GXUMA1
2EDL8114GXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
2EDL8114GXUMA1
2EDL8114GXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
247+91.19 грн
Мінімальне замовлення: 247
В кошику  од. на суму  грн.
2EDL8013GXUMA1
2EDL8013GXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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2EDL8012GXUMA1
2EDL8012GXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8112GXUMA1
2EDL8112GXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8113GXUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
2EDL8113GXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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2EDL8014GXUMA1
2EDL8014GXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-4
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 6A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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2EDL8034G4BXTMA1 Infineon-2EDL8034G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888fc1df217ecc
2EDL8034G4BXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8034G4CXTMA1 Infineon-2EDL8034G4C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888fc1e5cd7ecf
2EDL8034G4CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10VDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-10-2
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8033G3CXTMA1 Infineon-2EDL8033G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf5fc37e81
2EDL8033G3CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8034G3CXTMA1 Infineon-2EDL8034G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888fc1cfcf7ec5
2EDL8034G3CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 6A
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2EDL7125GXUMA1
Виробник: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER PG-WSON-1
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
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AUIRFS4010TRL auirfs4010.pdf?fileId=5546d462533600a4015355b6a9e114c3
AUIRFS4010TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
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FZ1600R17KE3NOSA1 Infineon-FZ1600R17KE3-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430462f4fe2
FZ1600R17KE3NOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 2300A 8950W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 8950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+60591.20 грн
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CY3203-095 PSoC%20Dev.%20Tools%20Selector%20Guide.pdf
Виробник: Infineon Technologies
Description: PSOC EMU POD FT 48-SSOP 1=5PCS
For Use With/Related Products: CY8C26643
Accessory Type: Emulator Foot Kit
Part Status: Obsolete
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S25FL512SAGBAEC13 Infineon-S25FL512S_Military_512_Mbit_64_Mbyte_3_0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7c4a3709f
S25FL512SAGBAEC13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CYPM1311-48LDXI Infineon-EZ-PD_TM_PMG1-S3_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3
CYPM1311-48LDXI
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (6x6)
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+409.76 грн
10+301.53 грн
25+278.32 грн
80+240.46 грн
230+226.69 грн
490+219.06 грн
980+209.86 грн
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S79FL01GSDSBHBC10 Infineon-1_Gbit_(128_Mbyte)_S79FL01GS_Dual-Quad_SPI_NOR_Flash_Memory-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed144dd4d6d
S79FL01GSDSBHBC10
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI 80MHZ 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 676 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1059.71 грн
10+945.40 грн
25+915.64 грн
40+845.07 грн
80+830.19 грн
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S26HL512TFPBHV000 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHV000
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IPP60R190P6XKSA1 DS_IPP60R190P6_2_0_Approved.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f2e70c5013f37a818ba23e7
IPP60R190P6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 6661 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.75 грн
50+102.76 грн
100+98.47 грн
500+75.14 грн
1000+69.41 грн
2000+67.87 грн
Мінімальне замовлення: 2
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IGLD60R190D1AUMA3 Infineon-IGLD60R190D1-DataSheet-v02_11-EN.pdf?fileId=5546d46269e1c019016a6d78ff5e2aba
IGLD60R190D1AUMA3
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
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IGLD60R190D1AUMA3 Infineon-IGLD60R190D1-DataSheet-v02_11-EN.pdf?fileId=5546d46269e1c019016a6d78ff5e2aba
IGLD60R190D1AUMA3
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
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S25HL01GTDPBHB030 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HL01GTDPBHB030
Виробник: Infineon Technologies
Description: Nor
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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CYALKIT-L02
Виробник: Infineon Technologies
Description: KIT EVALUATION
Packaging: Box
Utilized IC / Part: S6BL111A
Supplied Contents: Board(s)
Part Status: Obsolete
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CYALKIT-L01
Виробник: Infineon Technologies
Description: KIT EVALUATION
Packaging: Box
Utilized IC / Part: S6BL111A
Supplied Contents: Board(s)
Part Status: Obsolete
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TZ240N36KOFHPSA1 Infineon-TZ240N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fd8bf4e00
TZ240N36KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 3.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 240 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 3.6 kV
товару немає в наявності
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