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CY3696 Infineon Technologies download Description: SOCKET ADAPTER FOR CY2077FS
Packaging: Bulk
For Use With/Related Products: CY2077FS
Accessory Type: Socket Adapter
Part Status: Obsolete
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D2200N20TVFXPSA1 D2200N20TVFXPSA1 Infineon Technologies D2200N.pdf Description: DIODE STANDARD 2200A BGD7526K01
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Supplier Device Package: BG-D7526K0-1
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Last Time Buy
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
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CY25560SXC CY25560SXC Infineon Technologies Infineon-CY25560_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5cf783bf3 Description: IC CLK/FREQ SYNTH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 386 шт:
термін постачання 21-31 дні (днів)
1+809.87 грн
10+607.91 грн
97+518.84 грн
194+470.34 грн
291+462.04 грн
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FF1200R17KP4B2NOSA2 FF1200R17KP4B2NOSA2 Infineon Technologies Infineon-FF1200R17KP4_B2-DS-v03_01-EN.pdf?fileId=db3a304320d39d590122175b5e4b07f5 Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-PRIME2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1700 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+87743.63 грн
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S25HL512TDPNHV010 S25HL512TDPNHV010 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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FF200R12KE3B2HOSA1 FF200R12KE3B2HOSA1 Infineon Technologies Infineon-FF200R12KE3-DS-v03_01-en_cn.pdf?fileId=db3a30433dcf2fc4013dd01c80660219 Description: IGBT MOD 1200V 295A 1050W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 295 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8554.31 грн
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CY7112 CY7112 Infineon Technologies Infineon-CY7112_EZ-PD_PMG1-S2_Prototyping_Kit_Release_Notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f039dbb1b30&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EVAL BOARD FOR EZ-PD PMG1-S2
Packaging: Box
Function: USB Type-C® Power Delivery (PD)
Type: Power Management
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: EZ-PD PMG1-S2
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: USB PD 3.0
Secondary Attributes: I2C/SPI/UART Interface(s)
Embedded: Yes, MCU
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+1440.91 грн
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CY9BF416RPMC-G-JNE2 CY9BF416RPMC-G-JNE2 Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
на замовлення 383 шт:
термін постачання 21-31 дні (днів)
1+623.37 грн
10+465.55 грн
84+398.94 грн
168+360.87 грн
252+354.09 грн
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BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 Infineon Technologies Infineon-BSF450NE7NH3-DS-v02_02-EN.pdf?fileId=db3a30433a047ba0013a687e2ae403da Description: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
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BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 Infineon Technologies Infineon-BSF450NE7NH3-DS-v02_02-EN.pdf?fileId=db3a30433a047ba0013a687e2ae403da Description: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
на замовлення 4300 шт:
термін постачання 21-31 дні (днів)
3+126.04 грн
10+100.62 грн
100+80.05 грн
500+63.56 грн
1000+53.93 грн
2000+51.23 грн
Мінімальне замовлення: 3
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IRS2001SPBF IRS2001SPBF Infineon Technologies irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IAUT300N10S5N014ATMA1 IAUT300N10S5N014ATMA1 Infineon Technologies Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680 Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Qualification: AEC-Q101
на замовлення 11001 шт:
термін постачання 21-31 дні (днів)
1+461.57 грн
10+298.34 грн
100+215.57 грн
500+201.89 грн
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IAUT300N08S5N011ATMA1 IAUT300N08S5N011ATMA1 Infineon Technologies infineon-iaut300n08s5n011-datasheet-en.pdf Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5175 шт:
термін постачання 21-31 дні (днів)
1+441.98 грн
10+285.38 грн
100+205.65 грн
500+190.80 грн
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IAUS300N10S5N014ATMA1 IAUS300N10S5N014ATMA1 Infineon Technologies Infineon-IAUS300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c159b7467d Description: MOSFET_(75V 120V( PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Qualification: AEC-Q101
на замовлення 959 шт:
термін постачання 21-31 дні (днів)
1+502.44 грн
10+326.22 грн
100+240.96 грн
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IAUTN12S5N018GATMA1 IAUTN12S5N018GATMA1 Infineon Technologies Infineon-IAUTN12S5N018G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c86919021018712f65ab14212 Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
Qualification: AEC-Q101
на замовлення 1276 шт:
термін постачання 21-31 дні (днів)
1+602.08 грн
10+394.69 грн
100+306.37 грн
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IAUTN12S5N017ATMA1 IAUTN12S5N017ATMA1 Infineon Technologies Infineon-IAUTN12S5N017-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c86919021018712f66aa24215 Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+243.03 грн
Мінімальне замовлення: 2000
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IAUTN12S5N017ATMA1 IAUTN12S5N017ATMA1 Infineon Technologies Infineon-IAUTN12S5N017-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c86919021018712f66aa24215 Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
Qualification: AEC-Q101
на замовлення 3739 шт:
термін постачання 21-31 дні (днів)
1+539.91 грн
10+361.15 грн
100+286.45 грн
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2SP0430T2A0CFF18R17NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
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CY9AF141MAPMC1-G-JNE2 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Active
Number of I/O: 66
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CYBT-343026-PROG CYBT-343026-PROG Infineon Technologies Infineon-CYBT-343026-PROG_EZ-BT(TM)_WICED_MODULE_PROGRAMMING_KIT-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01497918a0 Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: EZ-BT WICED Modules
Type: Programmer (Universal Out-of-Circuit)
Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+24956.10 грн
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CY8C4244PVQ-442 CY8C4244PVQ-442 Infineon Technologies Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY14MB064Q1A-SXI CY14MB064Q1A-SXI Infineon Technologies download Description: IC NVSRAM 64KBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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XC2289H200F100LABKXUMA1 XC2289H200F100LABKXUMA1 Infineon Technologies XC228xH.pdf Description: IC MCU 16/32B 1.6MB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Not For New Designs
Number of I/O: 118
DigiKey Programmable: Not Verified
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XE167FH200F100LABKXUMA1 XE167FH200F100LABKXUMA1 Infineon Technologies Infineon-XE167XH-DS-v01_03-en.pdf?fileId=db3a304328c6bd5c0129121370f609a2 Description: IC MCU 16BIT 1.56MB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.56MB (1.56M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Not For New Designs
Number of I/O: 118
DigiKey Programmable: Not Verified
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XE169FH200F100LABKXQSA1 XE169FH200F100LABKXQSA1 Infineon Technologies Infineon-XE169XH-DS-v01_03-en.pdf?fileId=db3a304328c6bd5c01291216ba3909a8 Description: IC MCU 16BIT 1.6MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 30x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Not For New Designs
Number of I/O: 118
DigiKey Programmable: Not Verified
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IPI076N15N5AKSA1 IPI076N15N5AKSA1 Infineon Technologies Infineon-IPI076N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a04379f754c9 Description: MV POWER MOS
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
1+395.14 грн
50+199.49 грн
100+182.00 грн
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IRFC3710D Infineon Technologies Description: MOSFET 100V 57A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 57A
Rds On (Max) @ Id, Vgs: 23mOhm @ 57A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
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IRFC230NB Infineon Technologies Description: MOSFET 200V 9.3A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 9.3A
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.3A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
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IRFC4568EB Infineon Technologies Description: MOSFET N-CH 150V 171A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Ta)
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
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IRFC9130NB Infineon Technologies Description: MOSFET 100V 14A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
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IRFC7416B Infineon Technologies Description: MOSFET 30V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 30 V
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IRFC9140NB Infineon Technologies Description: MOSFET 100V 23A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 117mOhm @ 23A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
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IRFC3315B Infineon Technologies Description: MOSFET 150V 23A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 70mOhm @ 23A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
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IRFC240NB Infineon Technologies Description: MOSFET 200V DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
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IRFC250NB Infineon Technologies Description: MOSFET 200V DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
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IRFC4127EB Infineon Technologies Description: MOSFET N-CH 200V 76A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 76A (Ta)
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
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IRFC4229EB Infineon Technologies Description: MOSFET N-CH 250V 46A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 250 V
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IRFC9120NB Infineon Technologies Description: MOSFET 100V 6.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.6A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
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IRFC024NB Infineon Technologies Description: MOSFET 55V 17A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 55 V
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IRFC3810B Infineon Technologies Description: MOSFET 100V 170A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 170A
Rds On (Max) @ Id, Vgs: 9mOhm @ 170A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
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KITA2GTC3995VTRBSTOBO1 KITA2GTC3995VTRBSTOBO1 Infineon Technologies Infineon-TC3x9-UserManual-v01_00-EN.pdf?fileId=5546d46270c4f93e0170e4008f46127a Description: AURIX TC399 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC399
Platform: AURIX TC399 5V TRB Socket
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+148248.02 грн
В кошику  од. на суму  грн.
IPI60R165CPXKSA1 IPI60R165CPXKSA1 Infineon Technologies Infineon-IPI60R165CP-DS-v02_00-en.pdf?fileId=db3a304314dca38901152841362412b2 Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+403.66 грн
10+258.73 грн
100+184.64 грн
500+143.64 грн
В кошику  од. на суму  грн.
KITLGMBBOM003TOBO1 KITLGMBBOM003TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL MASTER MOTHER BOARD
Packaging: Box
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+7098.08 грн
В кошику  од. на суму  грн.
SIGC178T65DCEAX7SA2 Infineon Technologies Description: DIODE GENERAL PURPOSE 650V
Packaging: Bulk
Part Status: Obsolete
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2LS20017E42W36702NOSA1 2LS20017E42W36702NOSA1 Infineon Technologies Infineon-2LS20017E42W36702-DS-v02_02-en.pdf?fileId=db3a30433df41259013df8f0c7cf0a3c Description: IGBT MODULE 1700V 20A
Packaging: Bulk
Package / Case: Module
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
NTC Thermistor: Yes
Part Status: Obsolete
Current - Collector (Ic) (Max): 2500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
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BCR169SH6327XTSA1 BCR169SH6327XTSA1 Infineon Technologies bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1 Description: TRANS PREBIAS 2PNP 50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Discontinued at Digi-Key
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FF75R12YT3BOMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IGBT MOD 1200V 100A 345W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 345 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5 nF @ 25 V
товару немає в наявності
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SAK-TC1764-128F80HLAA SAK-TC1764-128F80HLAA Infineon Technologies Description: RISC FLASH MICROCONTROLLER, 32 B
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
15+1613.21 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
IRG8P60N120KDPBF IRG8P60N120KDPBF Infineon Technologies IRG8P60N120KD%28-E%29PbF.pdf Description: IGBT 1200V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
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IRLB4132PBF IRLB4132PBF Infineon Technologies IRLB4132PbF.pdf Description: MOSFET N-CH 30V 78A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 15 V
на замовлення 5873 шт:
термін постачання 21-31 дні (днів)
4+111.56 грн
10+67.98 грн
100+45.26 грн
500+33.34 грн
1000+30.41 грн
2000+27.94 грн
5000+24.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SAK-XE164HM-72F80L AA SAK-XE164HM-72F80L AA Infineon Technologies XE164xM.pdf Description: IC MCU 16BIT 576KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Obsolete
Number of I/O: 76
DigiKey Programmable: Not Verified
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CY8C4147LQS-S273 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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BSM50GP120OTISBOSA1 Infineon Technologies BSM50GP120_6-17-2003.pdf Description: BSM50GP120 - IGBT MODULE
Packaging: Bulk
Part Status: Active
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SP3603Z008-P03-3015 Infineon Technologies Description: F2MC-8L/8FX SOFTUNE PRO PACK
Packaging: Tray
Type: License
Part Status: Obsolete
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IPI60R165CP Infineon Technologies INFNS16995-1.pdf?t.download=true&u=5oefqw Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
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CY9AF112LPMC-GE1 CY9AF112LPMC-GE1 Infineon Technologies Infineon-CY9AF111L_M_N_CY9AF112L_M_N_CY9AF114L_M_N_CY9AF115M_N_CY9AF116M_N_32-bit_Arm_Cortex_-M3_FM3_Microcontroller_Datasheet-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)
2+304.87 грн
10+221.25 грн
25+203.21 грн
119+170.23 грн
238+163.65 грн
476+158.22 грн
952+151.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY9AF114LPMC-GE1 CY9AF114LPMC-GE1 Infineon Technologies Infineon-CY9AF111L_M_N_CY9AF112L_M_N_CY9AF114L_M_N_CY9AF115M_N_CY9AF116M_N_32-bit_Arm_Cortex_-M3_FM3_Microcontroller_Datasheet-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1192 шт:
термін постачання 21-31 дні (днів)
2+231.63 грн
10+168.11 грн
25+154.30 грн
119+129.14 грн
238+128.93 грн
Мінімальне замовлення: 2
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IRGP20B60PDPBF IRGP20B60PDPBF Infineon Technologies irgp20b60pdpbf.pdf?fileId=5546d462533600a401535655a487243e Description: IGBT NPT 600V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/115ns
Switching Energy: 95µJ (on), 100µJ (off)
Test Condition: 390V, 13A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 220 W
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FF900R12IE4PBOSA1 FF900R12IE4PBOSA1 Infineon Technologies Infineon-FF900R12IE4P-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153f07db7274207 Description: IGBT MOD 1200V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+34080.13 грн
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CY8C28645-24LTXIT CY8C28645-24LTXIT Infineon Technologies Infineon-CY8C28xxx_PSoC_Programmable_System-on-Chip-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6d6853d5a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_3_79 Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
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CY3696 download
Виробник: Infineon Technologies
Description: SOCKET ADAPTER FOR CY2077FS
Packaging: Bulk
For Use With/Related Products: CY2077FS
Accessory Type: Socket Adapter
Part Status: Obsolete
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D2200N20TVFXPSA1 D2200N.pdf
D2200N20TVFXPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 2200A BGD7526K01
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Supplier Device Package: BG-D7526K0-1
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Last Time Buy
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
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CY25560SXC Infineon-CY25560_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5cf783bf3
CY25560SXC
Виробник: Infineon Technologies
Description: IC CLK/FREQ SYNTH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 386 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+809.87 грн
10+607.91 грн
97+518.84 грн
194+470.34 грн
291+462.04 грн
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FF1200R17KP4B2NOSA2 Infineon-FF1200R17KP4_B2-DS-v03_01-EN.pdf?fileId=db3a304320d39d590122175b5e4b07f5
FF1200R17KP4B2NOSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-PRIME2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1700 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+87743.63 грн
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S25HL512TDPNHV010 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HL512TDPNHV010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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FF200R12KE3B2HOSA1 Infineon-FF200R12KE3-DS-v03_01-en_cn.pdf?fileId=db3a30433dcf2fc4013dd01c80660219
FF200R12KE3B2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 295A 1050W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 295 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8554.31 грн
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CY7112 Infineon-CY7112_EZ-PD_PMG1-S2_Prototyping_Kit_Release_Notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f039dbb1b30&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7112
Виробник: Infineon Technologies
Description: EVAL BOARD FOR EZ-PD PMG1-S2
Packaging: Box
Function: USB Type-C® Power Delivery (PD)
Type: Power Management
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: EZ-PD PMG1-S2
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: USB PD 3.0
Secondary Attributes: I2C/SPI/UART Interface(s)
Embedded: Yes, MCU
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1440.91 грн
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CY9BF416RPMC-G-JNE2 download
CY9BF416RPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
на замовлення 383 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+623.37 грн
10+465.55 грн
84+398.94 грн
168+360.87 грн
252+354.09 грн
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BSF450NE7NH3XUMA1 Infineon-BSF450NE7NH3-DS-v02_02-EN.pdf?fileId=db3a30433a047ba0013a687e2ae403da
BSF450NE7NH3XUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
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BSF450NE7NH3XUMA1 Infineon-BSF450NE7NH3-DS-v02_02-EN.pdf?fileId=db3a30433a047ba0013a687e2ae403da
BSF450NE7NH3XUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
на замовлення 4300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.04 грн
10+100.62 грн
100+80.05 грн
500+63.56 грн
1000+53.93 грн
2000+51.23 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRS2001SPBF irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e
IRS2001SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IAUT300N10S5N014ATMA1 Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680
IAUT300N10S5N014ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Qualification: AEC-Q101
на замовлення 11001 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+461.57 грн
10+298.34 грн
100+215.57 грн
500+201.89 грн
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IAUT300N08S5N011ATMA1 infineon-iaut300n08s5n011-datasheet-en.pdf
IAUT300N08S5N011ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5175 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+441.98 грн
10+285.38 грн
100+205.65 грн
500+190.80 грн
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IAUS300N10S5N014ATMA1 Infineon-IAUS300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c159b7467d
IAUS300N10S5N014ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Qualification: AEC-Q101
на замовлення 959 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+502.44 грн
10+326.22 грн
100+240.96 грн
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IAUTN12S5N018GATMA1 Infineon-IAUTN12S5N018G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c86919021018712f65ab14212
IAUTN12S5N018GATMA1
Виробник: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
Qualification: AEC-Q101
на замовлення 1276 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+602.08 грн
10+394.69 грн
100+306.37 грн
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IAUTN12S5N017ATMA1 Infineon-IAUTN12S5N017-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c86919021018712f66aa24215
IAUTN12S5N017ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+243.03 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUTN12S5N017ATMA1 Infineon-IAUTN12S5N017-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c86919021018712f66aa24215
IAUTN12S5N017ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
Qualification: AEC-Q101
на замовлення 3739 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+539.91 грн
10+361.15 грн
100+286.45 грн
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2SP0430T2A0CFF18R17NPSA1
Виробник: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
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CY9AF141MAPMC1-G-JNE2
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Active
Number of I/O: 66
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CYBT-343026-PROG Infineon-CYBT-343026-PROG_EZ-BT(TM)_WICED_MODULE_PROGRAMMING_KIT-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01497918a0
CYBT-343026-PROG
Виробник: Infineon Technologies
Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: EZ-BT WICED Modules
Type: Programmer (Universal Out-of-Circuit)
Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+24956.10 грн
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CY8C4244PVQ-442 Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e
CY8C4244PVQ-442
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY14MB064Q1A-SXI download
CY14MB064Q1A-SXI
Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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XC2289H200F100LABKXUMA1 XC228xH.pdf
XC2289H200F100LABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 1.6MB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Not For New Designs
Number of I/O: 118
DigiKey Programmable: Not Verified
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XE167FH200F100LABKXUMA1 Infineon-XE167XH-DS-v01_03-en.pdf?fileId=db3a304328c6bd5c0129121370f609a2
XE167FH200F100LABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 1.56MB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.56MB (1.56M x 8)
RAM Size: 138K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-13
Part Status: Not For New Designs
Number of I/O: 118
DigiKey Programmable: Not Verified
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XE169FH200F100LABKXQSA1 Infineon-XE169XH-DS-v01_03-en.pdf?fileId=db3a304328c6bd5c01291216ba3909a8
XE169FH200F100LABKXQSA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 1.6MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 1.6MB (1.6M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 30x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Not For New Designs
Number of I/O: 118
DigiKey Programmable: Not Verified
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IPI076N15N5AKSA1 Infineon-IPI076N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a04379f754c9
IPI076N15N5AKSA1
Виробник: Infineon Technologies
Description: MV POWER MOS
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+395.14 грн
50+199.49 грн
100+182.00 грн
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IRFC3710D
Виробник: Infineon Technologies
Description: MOSFET 100V 57A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 57A
Rds On (Max) @ Id, Vgs: 23mOhm @ 57A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
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IRFC230NB
Виробник: Infineon Technologies
Description: MOSFET 200V 9.3A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 9.3A
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.3A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
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IRFC4568EB
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 171A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Ta)
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
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IRFC9130NB
Виробник: Infineon Technologies
Description: MOSFET 100V 14A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
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IRFC7416B
Виробник: Infineon Technologies
Description: MOSFET 30V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 30 V
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IRFC9140NB
Виробник: Infineon Technologies
Description: MOSFET 100V 23A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 117mOhm @ 23A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
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IRFC3315B
Виробник: Infineon Technologies
Description: MOSFET 150V 23A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 70mOhm @ 23A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
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IRFC240NB
Виробник: Infineon Technologies
Description: MOSFET 200V DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
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IRFC250NB
Виробник: Infineon Technologies
Description: MOSFET 200V DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
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IRFC4127EB
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 76A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 76A (Ta)
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
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IRFC4229EB
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 46A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 250 V
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IRFC9120NB
Виробник: Infineon Technologies
Description: MOSFET 100V 6.6A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.6A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
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IRFC024NB
Виробник: Infineon Technologies
Description: MOSFET 55V 17A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 55 V
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IRFC3810B
Виробник: Infineon Technologies
Description: MOSFET 100V 170A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 170A
Rds On (Max) @ Id, Vgs: 9mOhm @ 170A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
товару немає в наявності
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KITA2GTC3995VTRBSTOBO1 Infineon-TC3x9-UserManual-v01_00-EN.pdf?fileId=5546d46270c4f93e0170e4008f46127a
KITA2GTC3995VTRBSTOBO1
Виробник: Infineon Technologies
Description: AURIX TC399 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC399
Platform: AURIX TC399 5V TRB Socket
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+148248.02 грн
В кошику  од. на суму  грн.
IPI60R165CPXKSA1 Infineon-IPI60R165CP-DS-v02_00-en.pdf?fileId=db3a304314dca38901152841362412b2
IPI60R165CPXKSA1
Виробник: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+403.66 грн
10+258.73 грн
100+184.64 грн
500+143.64 грн
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KITLGMBBOM003TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGMBBOM003TOBO1
Виробник: Infineon Technologies
Description: EVAL MASTER MOTHER BOARD
Packaging: Box
Function: Gate Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7098.08 грн
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SIGC178T65DCEAX7SA2
Виробник: Infineon Technologies
Description: DIODE GENERAL PURPOSE 650V
Packaging: Bulk
Part Status: Obsolete
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2LS20017E42W36702NOSA1 Infineon-2LS20017E42W36702-DS-v02_02-en.pdf?fileId=db3a30433df41259013df8f0c7cf0a3c
2LS20017E42W36702NOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 20A
Packaging: Bulk
Package / Case: Module
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
NTC Thermistor: Yes
Part Status: Obsolete
Current - Collector (Ic) (Max): 2500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
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BCR169SH6327XTSA1 bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1
BCR169SH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS 2PNP 50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Discontinued at Digi-Key
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FF75R12YT3BOMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 345W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 345 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5 nF @ 25 V
товару немає в наявності
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SAK-TC1764-128F80HLAA
SAK-TC1764-128F80HLAA
Виробник: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32 B
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+1613.21 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
IRG8P60N120KDPBF IRG8P60N120KD%28-E%29PbF.pdf
IRG8P60N120KDPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
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IRLB4132PBF IRLB4132PbF.pdf
IRLB4132PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 78A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 15 V
на замовлення 5873 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+111.56 грн
10+67.98 грн
100+45.26 грн
500+33.34 грн
1000+30.41 грн
2000+27.94 грн
5000+24.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SAK-XE164HM-72F80L AA XE164xM.pdf
SAK-XE164HM-72F80L AA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Obsolete
Number of I/O: 76
DigiKey Programmable: Not Verified
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CY8C4147LQS-S273 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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BSM50GP120OTISBOSA1 BSM50GP120_6-17-2003.pdf
Виробник: Infineon Technologies
Description: BSM50GP120 - IGBT MODULE
Packaging: Bulk
Part Status: Active
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SP3603Z008-P03-3015
Виробник: Infineon Technologies
Description: F2MC-8L/8FX SOFTUNE PRO PACK
Packaging: Tray
Type: License
Part Status: Obsolete
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IPI60R165CP INFNS16995-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
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CY9AF112LPMC-GE1 Infineon-CY9AF111L_M_N_CY9AF112L_M_N_CY9AF114L_M_N_CY9AF115M_N_CY9AF116M_N_32-bit_Arm_Cortex_-M3_FM3_Microcontroller_Datasheet-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb
CY9AF112LPMC-GE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.87 грн
10+221.25 грн
25+203.21 грн
119+170.23 грн
238+163.65 грн
476+158.22 грн
952+151.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY9AF114LPMC-GE1 Infineon-CY9AF111L_M_N_CY9AF112L_M_N_CY9AF114L_M_N_CY9AF115M_N_CY9AF116M_N_32-bit_Arm_Cortex_-M3_FM3_Microcontroller_Datasheet-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb
CY9AF114LPMC-GE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1192 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+231.63 грн
10+168.11 грн
25+154.30 грн
119+129.14 грн
238+128.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRGP20B60PDPBF irgp20b60pdpbf.pdf?fileId=5546d462533600a401535655a487243e
IRGP20B60PDPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/115ns
Switching Energy: 95µJ (on), 100µJ (off)
Test Condition: 390V, 13A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 220 W
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FF900R12IE4PBOSA1 Infineon-FF900R12IE4P-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153f07db7274207
FF900R12IE4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+34080.13 грн
В кошику  од. на суму  грн.
CY8C28645-24LTXIT Infineon-CY8C28xxx_PSoC_Programmable_System-on-Chip-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6d6853d5a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_3_79
CY8C28645-24LTXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
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