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TC399XP256F300SBDKXUMA1 TC399XP256F300SBDKXUMA1 Infineon Technologies 4_cip10520.pdf Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
TC397XA256F300SBDKXUMA1 TC397XA256F300SBDKXUMA1 Infineon Technologies Infineon-AURIX_TC3xx_Part2-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701717d35f8541d94 Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
TC399XX256F300SBDKXUMA1 TC399XX256F300SBDKXUMA1 Infineon Technologies 4_cip10520.pdf Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
TC367DP64F300SAALXUMA1 TC367DP64F300SAALXUMA1 Infineon Technologies 4_cip10527.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TC367DP64F300SAALXUMA1 TC367DP64F300SAALXUMA1 Infineon Technologies 4_cip10527.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
на замовлення 608 шт:
термін постачання 21-31 дні (днів)
1+2157.84 грн
10+1683.40 грн
25+1584.84 грн
100+1385.63 грн
250+1337.17 грн
В кошику  од. на суму  грн.
S29GL256S10TFIV20 S29GL256S10TFIV20 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 1106 шт:
термін постачання 21-31 дні (днів)
1+759.52 грн
10+679.76 грн
25+658.93 грн
91+590.88 грн
182+576.30 грн
273+567.85 грн
546+544.49 грн
1001+532.39 грн
В кошику  од. на суму  грн.
TC277T64F200NDCKXUMA2 TC277T64F200NDCKXUMA2 Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
1+2468.23 грн
10+1926.74 грн
25+1814.35 грн
100+1586.76 грн
250+1531.50 грн
В кошику  од. на суму  грн.
TC277T64F200SDCKXUMA2 TC277T64F200SDCKXUMA2 Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+2295.01 грн
10+1788.01 грн
25+1682.47 грн
100+1470.07 грн
250+1418.18 грн
В кошику  од. на суму  грн.
CY91F522FSCPMC-GSE1 CY91F522FSCPMC-GSE1 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32BIT 320KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CY91F522FSEPMC-GSE1 CY91F522FSEPMC-GSE1 Infineon Technologies Description: IC MCU 32BIT 320KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b SAR; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
ISZ75DP15LMATMA1 ISZ75DP15LMATMA1 Infineon Technologies Infineon-ISZ75DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa002bcd3702 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 543µA
Supplier Device Package: PG-TSDSON-8-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+23.14 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
ISZ75DP15LMATMA1 ISZ75DP15LMATMA1 Infineon Technologies Infineon-ISZ75DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa002bcd3702 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 543µA
Supplier Device Package: PG-TSDSON-8-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
на замовлення 5079 шт:
термін постачання 21-31 дні (днів)
4+95.63 грн
10+57.82 грн
50+42.96 грн
100+35.83 грн
500+27.92 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
ISC16DP15LMATMA1 ISC16DP15LMATMA1 Infineon Technologies Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2.304mA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 75 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
ISC16DP15LMATMA1 ISC16DP15LMATMA1 Infineon Technologies Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2.304mA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 75 V
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
2+259.44 грн
10+162.96 грн
50+125.69 грн
100+106.69 грн
500+86.95 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SPA11N80C3 E8209 SPA11N80C3 E8209 Infineon Technologies Infineon-SPA11N80C3-DS-v02_93-EN.pdf?fileId=db3a3043163797a60116385b2fcc00ec Description: 800V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
D2450N02TXPSA1 D2450N02TXPSA1 Infineon Technologies Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d Description: DIODE GEN PURP 200V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
CY7C1320CV18-250BZXC CY7C1320CV18-250BZXC Infineon Technologies CY7C1318CV18%2C%20CY7C1320CV18.pdf Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 326 шт:
термін постачання 21-31 дні (днів)
9+2521.01 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
CY14B101Q2A-SXIT CY14B101Q2A-SXIT Infineon Technologies Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Description: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CY7C1512V18-250BZXC CY7C1512V18-250BZXC Infineon Technologies CY7C1510%2C12%2C14%2C25V18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 105 шт
В кошику  од. на суму  грн.
CY8C29466-24SXIT CY8C29466-24SXIT Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: IC MCU 8BIT 32KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+711.95 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CY3230-28PDIP-AK Infineon Technologies Description: KIT FOOT FOR 28-DIP
Packaging: Bulk
For Use With/Related Products: CY8C29466
Accessory Type: Emulator Foot Kit
товару немає в наявності
В кошику  од. на суму  грн.
NAC1081XTMA1 NAC1081XTMA1 Infineon Technologies Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11 Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI, UART
Type: RFID Reader/Transponder
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 3.3V
Standards: ISO 14443, NFC
Supplier Device Package: PG-VQFN-32-20
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IRL530NSPBF IRL530NSPBF Infineon Technologies irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562 description Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товару немає в наявності
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IHW30N110R5XKSA1 IHW30N110R5XKSA1 Infineon Technologies Infineon-IHW30N110R5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018129177f1b20ad Description: IGBT TRENCH 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/350ns
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Power - Max: 330 W
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
1+355.85 грн
30+189.30 грн
В кошику  од. на суму  грн.
T2180N18TOFVTXPSA1 T2180N18TOFVTXPSA1 Infineon Technologies Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+38058.90 грн
В кошику  од. на суму  грн.
CY8C4147AZS-S445T CY8C4147AZS-S445T Infineon Technologies Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33 Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
TLE7184F3VXUMA2 TLE7184F3VXUMA2 Infineon Technologies Infineon-TLE7184F3V-DS-v01_02-EN.pdf?fileId=db3a3043353cc43601353d3eb3c0006f Description: IC MOTOR DRIVER 6V-45V 48VQFN
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Technology: Power MOSFET
Voltage - Supply: 6V ~ 45V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Packaging: Tape & Reel (TR)
Grade: Automotive
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPF009N04NF2SATMA1 IPF009N04NF2SATMA1 Infineon Technologies Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd Description: TRENCH <= 40V
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IPF009N04NF2SATMA1 IPF009N04NF2SATMA1 Infineon Technologies Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
2+271.98 грн
10+184.62 грн
100+132.68 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
AUIRF7736M2TR AUIRF7736M2TR Infineon Technologies auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb Description: MOSFET N-CH 40V 22A DIRECTFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
4800+138.63 грн
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
AUIRF7736M2TR AUIRF7736M2TR Infineon Technologies auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb Description: MOSFET N-CH 40V 22A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
на замовлення 4993 шт:
термін постачання 21-31 дні (днів)
1+315.88 грн
10+201.38 грн
100+142.74 грн
500+125.28 грн
В кошику  од. на суму  грн.
AUIRF7739L2TR AUIRF7739L2TR Infineon Technologies auirf7739l2.pdf?fileId=5546d462533600a4015355b0a6551407 Description: MOSFET N-CH 40V 46A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
TT215N22KOFHPSA1 TT215N22KOFHPSA1 Infineon Technologies Infineon-TT215N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42fe0c84e1c Description: SCR MODULE 2.2KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 2.2 kV
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+13181.41 грн
12+11150.75 грн
В кошику  од. на суму  грн.
TDA16810GXUMA2 TDA16810GXUMA2 Infineon Technologies Description: IC POWERSTAGE
DigiKey Programmable: Not Verified
Supplier Device Package: PG-DSO-14
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TLS850B0TE50BOARDTOBO1 TLS850B0TE50BOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLS850B0TEV50
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850B0TEV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 5V
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+1968.16 грн
В кошику  од. на суму  грн.
TLS850B0TB33BOARDTOBO1 TLS850B0TB33BOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLS850B0TBV33
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850B0TBV33
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 3.3V
Packaging: Box
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+1968.16 грн
В кошику  од. на суму  грн.
TLS850B0TE33BOARDTOBO1 TLS850B0TE33BOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLS850B0TEV33
Contents: Board(s)
Utilized IC / Part: TLS850B0TEV33
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 3.3V
Packaging: Box
Channels per IC: 1 - Single
Supplied Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+1968.16 грн
В кошику  од. на суму  грн.
TLS4125ADJBOARDTOBO1 TLS4125ADJBOARDTOBO1 Infineon Technologies Description: TLS4125 ADJ BOARD
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: TLS4125
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 2.5A
Voltage - Input: 4V ~ 35V
Voltage - Output: 3V ~ 10V
Packaging: Bulk
товару немає в наявності
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CYW89373CUBGT CYW89373CUBGT Infineon Technologies Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
CY8C4145AZI-S423T CY8C4145AZI-S423T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 48TQFP
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IRG7PH50UPBF IRG7PH50UPBF Infineon Technologies irg7ph50upbf.pdf?fileId=5546d462533600a40153564db8e123c3 Description: IGBT 1200V 140A 556W TO247AC
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 140 A
Gate Charge: 290 nC
Test Condition: 600V, 50A, 5Ohm, 15V
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C: 35ns/430ns
IGBT Type: Trench
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Power - Max: 556 W
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
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IMZ120R030M1HXKSA1 IMZ120R030M1HXKSA1 Infineon Technologies infineon-imz120r030m1h-datasheet-en.pdf Description: SICFET N-CH 1.2KV 56A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
на замовлення 385 шт:
термін постачання 21-31 дні (днів)
1+1163.18 грн
30+689.52 грн
120+595.22 грн
В кошику  од. на суму  грн.
IMBG65R022M1HXTMA1 IMBG65R022M1HXTMA1 Infineon Technologies Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74 Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+631.44 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IMBG65R022M1HXTMA1 IMBG65R022M1HXTMA1 Infineon Technologies Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74 Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
1+1251.75 грн
10+855.02 грн
100+744.26 грн
В кошику  од. на суму  грн.
IMBG65R039M1HXTMA1 Infineon Technologies Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IMBG65R039M1HXTMA1 Infineon Technologies Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
товару немає в наявності
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AIMBG120R080M1XTMA1 AIMBG120R080M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 30.6A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AIMBG120R080M1XTMA1 AIMBG120R080M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 30.6A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
1+639.59 грн
10+420.64 грн
100+310.08 грн
В кошику  од. на суму  грн.
AIMBG120R040M1XTMA1 AIMBG120R040M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 54A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+426.88 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AIMBG120R040M1XTMA1 AIMBG120R040M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 54A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+924.90 грн
10+620.66 грн
50+505.51 грн
100+472.19 грн
В кошику  од. на суму  грн.
AIMBG120R010M1XTMA1 AIMBG120R010M1XTMA1 Infineon Technologies Infineon-AIMBG120R010M1-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe1a7ea4a5b12 Description: SICFET N-CH 1200V 205A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Power Dissipation (Max): 882W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+1276.33 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AIMBG120R010M1XTMA1 AIMBG120R010M1XTMA1 Infineon Technologies Infineon-AIMBG120R010M1-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe1a7ea4a5b12 Description: SICFET N-CH 1200V 205A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Power Dissipation (Max): 882W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1105 шт:
термін постачання 21-31 дні (днів)
1+2195.46 грн
10+1549.80 грн
100+1504.36 грн
В кошику  од. на суму  грн.
CYBT-483039-02 CYBT-483039-02 Infineon Technologies Infineon-CYBT-483039-EVAL-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee63d196e53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0_1187 Description: RF TXRX MODULE BT CHIP SMD
DigiKey Programmable: Not Verified
Serial Interfaces: ADC, I²C, I²S, PCM, PWM, SPI, UART
RF Family/Standard: Bluetooth
Modulation: 8DPSK, DQPSK, GFSK
Utilized IC / Part: CYW20719
Antenna Type: Integrated, Chip
Current - Transmitting: 5.6mA
Current - Receiving: 5.9mA
Protocol: Bluetooth v5.0 +EDR
Data Rate: 3Mbps
Power - Output: 20dBm
Voltage - Supply: 1.76V ~ 3.63V
Operating Temperature: -30°C ~ 85°C
Memory Size: 1MB Flash, 512kB SRAM
Frequency: 2.402GHz ~ 2.48GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 34-SMD Module
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
CYBT-483039-02 CYBT-483039-02 Infineon Technologies Infineon-CYBT-483039-EVAL-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee63d196e53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0_1187 Description: RF TXRX MODULE BT CHIP SMD
DigiKey Programmable: Not Verified
Serial Interfaces: ADC, I²C, I²S, PCM, PWM, SPI, UART
RF Family/Standard: Bluetooth
Modulation: 8DPSK, DQPSK, GFSK
Utilized IC / Part: CYW20719
Antenna Type: Integrated, Chip
Current - Transmitting: 5.6mA
Current - Receiving: 5.9mA
Protocol: Bluetooth v5.0 +EDR
Data Rate: 3Mbps
Power - Output: 20dBm
Voltage - Supply: 1.76V ~ 3.63V
Operating Temperature: -30°C ~ 85°C
Memory Size: 1MB Flash, 512kB SRAM
Frequency: 2.402GHz ~ 2.48GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 34-SMD Module
Packaging: Cut Tape (CT)
на замовлення 457 шт:
термін постачання 21-31 дні (днів)
1+1448.49 грн
10+1262.00 грн
25+1162.37 грн
100+997.34 грн
250+935.00 грн
В кошику  од. на суму  грн.
CYBT-483039-EVAL CYBT-483039-EVAL Infineon Technologies Infineon-CYBT-483039-EVAL_EZ-BT_Module_Arduino_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f00c4c317ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: MODULE KIT
Utilized IC / Part: CYBT-483039-02
Contents: Board(s)
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® 5.x (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBT-483039-02
Packaging: Bulk
товару немає в наявності
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IRL8113PBF IRL8113PBF Infineon Technologies IRL8113%28S%2CL%29PbF.pdf Description: MOSFET N-CH 30V 105A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
товару немає в наявності
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IRL3803VPBF IRL3803VPBF Infineon Technologies infineon-irl3803v-datasheet-en.pdf?fileId=5546d462533600a40153565f92692559 Description: MOSFET N-CH 30V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 71A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
товару немає в наявності
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V722680MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V72-26..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d836b900b0a Description: CLAMP DISK DEVICES 58MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 2.677" (68.00mm)
Shape: Square
Type: Mount
Width: 2.677" (68.00mm)
Height: 3.150" (80.00mm)
товару немає в наявності
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CY62157ELL-45ZSXIT CY62157ELL-45ZSXIT Infineon Technologies Infineon-CY62157E_MoBL(R)_8-Mbit_(512_K_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebec06a329a Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SAF-XC878M-16FFI 3V3 AA SAF-XC878M-16FFI 3V3 AA Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
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TC399XP256F300SBDKXUMA1 4_cip10520.pdf
TC399XP256F300SBDKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
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TC397XA256F300SBDKXUMA1 Infineon-AURIX_TC3xx_Part2-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701717d35f8541d94
TC397XA256F300SBDKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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TC399XX256F300SBDKXUMA1 4_cip10520.pdf
TC399XX256F300SBDKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
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TC367DP64F300SAALXUMA1 4_cip10527.pdf
TC367DP64F300SAALXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TC367DP64F300SAALXUMA1 4_cip10527.pdf
TC367DP64F300SAALXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
на замовлення 608 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2157.84 грн
10+1683.40 грн
25+1584.84 грн
100+1385.63 грн
250+1337.17 грн
В кошику  од. на суму  грн.
S29GL256S10TFIV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S10TFIV20
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 1106 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+759.52 грн
10+679.76 грн
25+658.93 грн
91+590.88 грн
182+576.30 грн
273+567.85 грн
546+544.49 грн
1001+532.39 грн
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TC277T64F200NDCKXUMA2 Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
TC277T64F200NDCKXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2468.23 грн
10+1926.74 грн
25+1814.35 грн
100+1586.76 грн
250+1531.50 грн
В кошику  од. на суму  грн.
TC277T64F200SDCKXUMA2 Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
TC277T64F200SDCKXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2295.01 грн
10+1788.01 грн
25+1682.47 грн
100+1470.07 грн
250+1418.18 грн
В кошику  од. на суму  грн.
CY91F522FSCPMC-GSE1 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F522FSCPMC-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CY91F522FSEPMC-GSE1
CY91F522FSEPMC-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b SAR; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
ISZ75DP15LMATMA1 Infineon-ISZ75DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa002bcd3702
ISZ75DP15LMATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 543µA
Supplier Device Package: PG-TSDSON-8-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+23.14 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
ISZ75DP15LMATMA1 Infineon-ISZ75DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa002bcd3702
ISZ75DP15LMATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 543µA
Supplier Device Package: PG-TSDSON-8-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
на замовлення 5079 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+95.63 грн
10+57.82 грн
50+42.96 грн
100+35.83 грн
500+27.92 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
ISC16DP15LMATMA1 Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5
ISC16DP15LMATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2.304mA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 75 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
ISC16DP15LMATMA1 Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5
ISC16DP15LMATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2.304mA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 75 V
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+259.44 грн
10+162.96 грн
50+125.69 грн
100+106.69 грн
500+86.95 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
SPA11N80C3 E8209 Infineon-SPA11N80C3-DS-v02_93-EN.pdf?fileId=db3a3043163797a60116385b2fcc00ec
SPA11N80C3 E8209
Виробник: Infineon Technologies
Description: 800V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
D2450N02TXPSA1 Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d
D2450N02TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 200 V
товару немає в наявності
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
CY7C1320CV18-250BZXC CY7C1318CV18%2C%20CY7C1320CV18.pdf
CY7C1320CV18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 326 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+2521.01 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
CY14B101Q2A-SXIT Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
CY14B101Q2A-SXIT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CY7C1512V18-250BZXC CY7C1510%2C12%2C14%2C25V18.pdf
CY7C1512V18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 105 шт
В кошику  од. на суму  грн.
CY8C29466-24SXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CY8C29466-24SXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+711.95 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CY3230-28PDIP-AK
Виробник: Infineon Technologies
Description: KIT FOOT FOR 28-DIP
Packaging: Bulk
For Use With/Related Products: CY8C29466
Accessory Type: Emulator Foot Kit
товару немає в наявності
В кошику  од. на суму  грн.
NAC1081XTMA1 Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11
NAC1081XTMA1
Виробник: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI, UART
Type: RFID Reader/Transponder
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 3.3V
Standards: ISO 14443, NFC
Supplier Device Package: PG-VQFN-32-20
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IRL530NSPBF description irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562
IRL530NSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IHW30N110R5XKSA1 Infineon-IHW30N110R5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018129177f1b20ad
IHW30N110R5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/350ns
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Power - Max: 330 W
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+355.85 грн
30+189.30 грн
В кошику  од. на суму  грн.
T2180N18TOFVTXPSA1 Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca
T2180N18TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+38058.90 грн
В кошику  од. на суму  грн.
CY8C4147AZS-S445T Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33
CY8C4147AZS-S445T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
TLE7184F3VXUMA2 Infineon-TLE7184F3V-DS-v01_02-EN.pdf?fileId=db3a3043353cc43601353d3eb3c0006f
TLE7184F3VXUMA2
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 6V-45V 48VQFN
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Technology: Power MOSFET
Voltage - Supply: 6V ~ 45V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Packaging: Tape & Reel (TR)
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPF009N04NF2SATMA1 Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd
IPF009N04NF2SATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IPF009N04NF2SATMA1 Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd
IPF009N04NF2SATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+271.98 грн
10+184.62 грн
100+132.68 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
AUIRF7736M2TR auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb
AUIRF7736M2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4800+138.63 грн
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
AUIRF7736M2TR auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb
AUIRF7736M2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
на замовлення 4993 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+315.88 грн
10+201.38 грн
100+142.74 грн
500+125.28 грн
В кошику  од. на суму  грн.
AUIRF7739L2TR auirf7739l2.pdf?fileId=5546d462533600a4015355b0a6551407
AUIRF7739L2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
TT215N22KOFHPSA1 Infineon-TT215N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42fe0c84e1c
TT215N22KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 2.2 kV
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+13181.41 грн
12+11150.75 грн
В кошику  од. на суму  грн.
TDA16810GXUMA2
TDA16810GXUMA2
Виробник: Infineon Technologies
Description: IC POWERSTAGE
DigiKey Programmable: Not Verified
Supplier Device Package: PG-DSO-14
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TLS850B0TE50BOARDTOBO1
TLS850B0TE50BOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS850B0TEV50
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850B0TEV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 5V
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1968.16 грн
В кошику  од. на суму  грн.
TLS850B0TB33BOARDTOBO1
TLS850B0TB33BOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS850B0TBV33
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850B0TBV33
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 3.3V
Packaging: Box
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1968.16 грн
В кошику  од. на суму  грн.
TLS850B0TE33BOARDTOBO1
TLS850B0TE33BOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS850B0TEV33
Contents: Board(s)
Utilized IC / Part: TLS850B0TEV33
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 3.3V
Packaging: Box
Channels per IC: 1 - Single
Supplied Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1968.16 грн
В кошику  од. на суму  грн.
TLS4125ADJBOARDTOBO1
TLS4125ADJBOARDTOBO1
Виробник: Infineon Technologies
Description: TLS4125 ADJ BOARD
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: TLS4125
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 2.5A
Voltage - Input: 4V ~ 35V
Voltage - Output: 3V ~ 10V
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
CYW89373CUBGT
CYW89373CUBGT
Виробник: Infineon Technologies
Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
CY8C4145AZI-S423T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4145AZI-S423T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IRG7PH50UPBF irg7ph50upbf.pdf?fileId=5546d462533600a40153564db8e123c3
IRG7PH50UPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 140A 556W TO247AC
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 140 A
Gate Charge: 290 nC
Test Condition: 600V, 50A, 5Ohm, 15V
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C: 35ns/430ns
IGBT Type: Trench
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Power - Max: 556 W
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IMZ120R030M1HXKSA1 infineon-imz120r030m1h-datasheet-en.pdf
IMZ120R030M1HXKSA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 56A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
на замовлення 385 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1163.18 грн
30+689.52 грн
120+595.22 грн
В кошику  од. на суму  грн.
IMBG65R022M1HXTMA1 Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74
IMBG65R022M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+631.44 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IMBG65R022M1HXTMA1 Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74
IMBG65R022M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1251.75 грн
10+855.02 грн
100+744.26 грн
В кошику  од. на суму  грн.
IMBG65R039M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IMBG65R039M1HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
AIMBG120R080M1XTMA1 448_AIMBG120R.pdf
AIMBG120R080M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 30.6A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AIMBG120R080M1XTMA1 448_AIMBG120R.pdf
AIMBG120R080M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 30.6A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+639.59 грн
10+420.64 грн
100+310.08 грн
В кошику  од. на суму  грн.
AIMBG120R040M1XTMA1 448_AIMBG120R.pdf
AIMBG120R040M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 54A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+426.88 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AIMBG120R040M1XTMA1 448_AIMBG120R.pdf
AIMBG120R040M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 54A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+924.90 грн
10+620.66 грн
50+505.51 грн
100+472.19 грн
В кошику  од. на суму  грн.
AIMBG120R010M1XTMA1 Infineon-AIMBG120R010M1-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe1a7ea4a5b12
AIMBG120R010M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 205A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Power Dissipation (Max): 882W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+1276.33 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AIMBG120R010M1XTMA1 Infineon-AIMBG120R010M1-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe1a7ea4a5b12
AIMBG120R010M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 205A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Power Dissipation (Max): 882W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1105 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2195.46 грн
10+1549.80 грн
100+1504.36 грн
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CYBT-483039-02 Infineon-CYBT-483039-EVAL-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee63d196e53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0_1187
CYBT-483039-02
Виробник: Infineon Technologies
Description: RF TXRX MODULE BT CHIP SMD
DigiKey Programmable: Not Verified
Serial Interfaces: ADC, I²C, I²S, PCM, PWM, SPI, UART
RF Family/Standard: Bluetooth
Modulation: 8DPSK, DQPSK, GFSK
Utilized IC / Part: CYW20719
Antenna Type: Integrated, Chip
Current - Transmitting: 5.6mA
Current - Receiving: 5.9mA
Protocol: Bluetooth v5.0 +EDR
Data Rate: 3Mbps
Power - Output: 20dBm
Voltage - Supply: 1.76V ~ 3.63V
Operating Temperature: -30°C ~ 85°C
Memory Size: 1MB Flash, 512kB SRAM
Frequency: 2.402GHz ~ 2.48GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 34-SMD Module
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
CYBT-483039-02 Infineon-CYBT-483039-EVAL-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee63d196e53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0_1187
CYBT-483039-02
Виробник: Infineon Technologies
Description: RF TXRX MODULE BT CHIP SMD
DigiKey Programmable: Not Verified
Serial Interfaces: ADC, I²C, I²S, PCM, PWM, SPI, UART
RF Family/Standard: Bluetooth
Modulation: 8DPSK, DQPSK, GFSK
Utilized IC / Part: CYW20719
Antenna Type: Integrated, Chip
Current - Transmitting: 5.6mA
Current - Receiving: 5.9mA
Protocol: Bluetooth v5.0 +EDR
Data Rate: 3Mbps
Power - Output: 20dBm
Voltage - Supply: 1.76V ~ 3.63V
Operating Temperature: -30°C ~ 85°C
Memory Size: 1MB Flash, 512kB SRAM
Frequency: 2.402GHz ~ 2.48GHz
Mounting Type: Surface Mount
Sensitivity: -95dBm
Package / Case: 34-SMD Module
Packaging: Cut Tape (CT)
на замовлення 457 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1448.49 грн
10+1262.00 грн
25+1162.37 грн
100+997.34 грн
250+935.00 грн
В кошику  од. на суму  грн.
CYBT-483039-EVAL Infineon-CYBT-483039-EVAL_EZ-BT_Module_Arduino_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f00c4c317ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBT-483039-EVAL
Виробник: Infineon Technologies
Description: MODULE KIT
Utilized IC / Part: CYBT-483039-02
Contents: Board(s)
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® 5.x (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBT-483039-02
Packaging: Bulk
товару немає в наявності
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IRL8113PBF IRL8113%28S%2CL%29PbF.pdf
IRL8113PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 105A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
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IRL3803VPBF infineon-irl3803v-datasheet-en.pdf?fileId=5546d462533600a40153565f92692559
IRL3803VPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 71A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
товару немає в наявності
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V722680MHPSA1 Infineon-Clamp_for_disc_devices_V72-26..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d836b900b0a
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 2.677" (68.00mm)
Shape: Square
Type: Mount
Width: 2.677" (68.00mm)
Height: 3.150" (80.00mm)
товару немає в наявності
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CY62157ELL-45ZSXIT Infineon-CY62157E_MoBL(R)_8-Mbit_(512_K_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebec06a329a
CY62157ELL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
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SAF-XC878M-16FFI 3V3 AA Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t
SAF-XC878M-16FFI 3V3 AA
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
товару немає в наявності
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