Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149501) > Сторінка 622 з 2492
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XMC1302Q040X0064ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 40VQFNPackaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-40-13 Part Status: Active Number of I/O: 27 DigiKey Programmable: Not Verified |
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XMC1302Q040X0064ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 40VQFNPackaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-40-13 Part Status: Active Number of I/O: 27 DigiKey Programmable: Not Verified |
на замовлення 3485 шт: термін постачання 21-31 дні (днів) |
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IRF7341TRPBFXTMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 55V 4.7A 8DSO-902Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PG-DSO-8-902 |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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IRF7341TRPBFXTMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 55V 4.7A 8DSO-902Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PG-DSO-8-902 |
на замовлення 34663 шт: термін постачання 21-31 дні (днів) |
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TC389QP160F300SAELXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 10MB FLASH 516FBGAPackaging: Tape & Reel (TR) Part Status: Active Package / Case: 516-FBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 10MB (10M x 8) RAM Size: 1.34M x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Core Size: 32-Bit 6-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, LVDS, PWM, WDT Supplier Device Package: PG-FBGA-516-1 |
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TC387QP160F300SAEKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 10MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Part Status: Active Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 10MB (10M x 8) RAM Size: 1.34M x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512K x 8 Core Processor: TriCore™ Core Size: 32-Bit 6-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, LVDS, PWM, WDT Supplier Device Package: PG-LFBGA-292-11 |
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| TC397QA160F300SBDKXUMA2 | Infineon Technologies |
Description: IC MCU Packaging: Tape & Reel (TR) Part Status: Active |
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TC389QP160F300SAEKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 10MB FLASH 516FBGAPackaging: Tape & Reel (TR) Part Status: Active Package / Case: 516-FBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 10MB (10M x 8) RAM Size: 1.34M x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Core Size: 32-Bit 6-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, LVDS, PWM, WDT Supplier Device Package: PG-FBGA-516-1 |
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TC387QP160F300SAELXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 10MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Part Status: Active Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 10MB (10M x 8) RAM Size: 1.34M x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512K x 8 Core Processor: TriCore™ Core Size: 32-Bit 6-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, LVDS, PWM, WDT Supplier Device Package: PG-LFBGA-292-11 |
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AUIRF3710ZS | Infineon Technologies |
Description: MOSFET N-CH 100V 59A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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CY2305SXC-1T | Infineon Technologies |
Description: IC FANOUT BUFFER 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
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CY2305SXC-1T | Infineon Technologies |
Description: IC FANOUT BUFFER 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 761 шт: термін постачання 21-31 дні (днів) |
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D2450N06TXPSA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 2450APackaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2450A Operating Temperature - Junction: -40°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A Current - Reverse Leakage @ Vr: 50 mA @ 600 V |
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BCM846SH6327XTSA1 | Infineon Technologies |
Description: TRANS 2NPN 65V 0.1A PG-SOT363-POPackaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT363-PO |
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CY8C4124PVQ-442 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 28SSOPPackaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Not Verified |
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| XDPE10280BG002XUMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLER PG-VQFN-5 Packaging: Tape & Reel (TR) |
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| XDPE10280BG002XUMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLER PG-VQFN-5 Packaging: Cut Tape (CT) |
на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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IR3588MTRPBF | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 28QFNPackaging: Bulk Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: -40°C ~ 85°C Applications: Controller, Intel VR12.5, VR12.6 Supplier Device Package: 28-QFN (4x4) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IR3581MTRPBF | Infineon Technologies |
Description: IC REG CTRLR INTEL 2OUT 48QFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: -40°C ~ 85°C Applications: Controller, Intel VR12, VR12.5 Supplier Device Package: 48-QFN (6x6) |
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| IR3588MLN01TRP | Infineon Technologies |
Description: IC REG BUCK 28VQFNPackaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Frequency - Switching: 200kHz ~ 2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: 28-QFN (4x4) Synchronous Rectifier: No Serial Interfaces: I²C Output Phases: 4 Clock Sync: No Number of Outputs: 2 |
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| IR3583MTRPBF | Infineon Technologies |
Description: IC CONTROLLER Packaging: Bulk |
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IPD50N03S207ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 85µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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| FF600R12IS4FBOSA1 | Infineon Technologies |
Description: PP, IHM I, XHP 1,7KVPackaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IPG16N10S461ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 100V 16A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 9µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
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IPG16N10S461ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 100V 16A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 9µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3669 шт: термін постачання 21-31 дні (днів) |
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CY7C1441KV33-133AXC | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 6.5 ns Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
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CYSHM35925I-M068LTIT | Infineon Technologies |
Description: PSOC4Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 55 DigiKey Programmable: Not Verified |
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IPD80P03P4L07ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 30V 80A TO252-31Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO252-3-11 Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IPD80P03P4L07ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 30V 80A TO252-31Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO252-3-11 Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16152 шт: термін постачання 21-31 дні (днів) |
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CY8C4145PVI-PS421 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 28SSOPPackaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 1095 шт: термін постачання 21-31 дні (днів) |
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IPSA70R950CEAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 8.7A TO251-3Packaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO251-3-347 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V |
на замовлення 34000 шт: термін постачання 21-31 дні (днів) |
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CY9AF112NPMC-G-104MJE1 | Infineon Technologies |
Description: IC MCU 32BIT FLASH LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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CY4500 | Infineon Technologies |
Description: PROTOCOL ANALYZER COMP SYSTPackaging: Bulk For Use With/Related Products: Computer Systems Tool Type: Protocol Analyzer |
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CYPD4125-40LQXI | Infineon Technologies |
Description: IC MCD CCG4 WIRED 40-QFNPackaging: Tray DigiKey Programmable: Not Verified |
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CYPD4126-24LQXI | Infineon Technologies |
Description: TYPE-C - OTHERS Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: GPIO, I2C, SPI, UART/USART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Program Memory Type: FLASH (128kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 11 |
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CYPD4126-24LQXIT | Infineon Technologies |
Description: TYPE-C - OTHERS Packaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: GPIO, I2C, SPI, UART/USART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Program Memory Type: FLASH (128kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 11 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYPD5126-40LQXI | Infineon Technologies |
Description: IC MCD CCG5C WIRED 40-QFN Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYPD4236-40LQXI | Infineon Technologies |
Description: TYPE-C - OTHERS Packaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: GPIO, I2C, SPI, UART/USART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Program Memory Type: FLASH (128kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 40-QFN (6x6) Number of I/O: 25 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYPD4225-40LQXIT | Infineon Technologies |
Description: TYPE-C - OTHERS Packaging: Tape & Reel (TR) Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Program Memory Type: FLASH (128kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 40-QFN (6x6) Number of I/O: 25 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYPD4236-40LQXIT | Infineon Technologies |
Description: TYPE-C - OTHERS Packaging: Tape & Reel (TR) Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: GPIO, I2C, SPI, UART/USART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Program Memory Type: FLASH (128kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 40-QFN (6x6) Number of I/O: 25 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CYPD4236-40LQXQ | Infineon Technologies |
Description: CCG4Packaging: Tray DigiKey Programmable: Not Verified Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: GPIO, I2C, SPI, UART/USART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 5.5V Program Memory Type: FLASH (128kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 40-QFN (6x6) Number of I/O: 25 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S25FL128SDSBHA210 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 24BGAPackaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FS512SDSBHA210 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGAPackaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FS512SFABHA210 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 102 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Write Cycle Time - Word, Page: 2ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FL512SAGBHA210 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGAPackaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IQE022N06LM5CGATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 48µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IQE022N06LM5CGATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 48µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V |
на замовлення 3365 шт: термін постачання 21-31 дні (днів) |
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| BSM200GA120DN2HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 300A 1550W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 4 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BSM200GB120DN2HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 290A 1400W MOD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1400 W Current - Collector Cutoff (Max): 4 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BSM200GA120DN2SE325HOSA1 | Infineon Technologies |
Description: IGBT MOD Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BSM200GA120DN2FSE32HOSA1 | Infineon Technologies |
Description: IGBT MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 4 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BSM200GA120DN2S7HOSA1 | Infineon Technologies |
Description: IGBT MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1.55 W Current - Collector Cutoff (Max): 4 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPT65R099CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-HSOF-8-2 Drain to Source Voltage (Vdss): 650 V |
на замовлення 1988 шт: термін постачання 21-31 дні (днів) |
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IPDQ65R099CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V |
на замовлення 739 шт: термін постачання 21-31 дні (днів) |
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S29GL064S80FHIV10 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 80 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL064S80DHV010 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 80 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL064S80DHV030 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 80 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL064S80DHV040 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 80 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL064S80FHV010 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 80 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL064S80FHV040 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 80 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| XMC1302Q040X0064ABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| XMC1302Q040X0064ABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.15 грн |
| 10+ | 207.72 грн |
| 25+ | 196.39 грн |
| 100+ | 159.71 грн |
| 250+ | 151.52 грн |
| 500+ | 135.96 грн |
| 1000+ | 112.79 грн |
| 2500+ | 107.15 грн |
| IRF7341TRPBFXTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 4.7A 8DSO-902
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
Description: MOSFET 2N-CH 55V 4.7A 8DSO-902
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 22.62 грн |
| 8000+ | 20.23 грн |
| 12000+ | 20.03 грн |
| IRF7341TRPBFXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 4.7A 8DSO-902
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
Description: MOSFET 2N-CH 55V 4.7A 8DSO-902
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
на замовлення 34663 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.53 грн |
| 10+ | 56.91 грн |
| 100+ | 37.60 грн |
| 500+ | 27.48 грн |
| 1000+ | 24.97 грн |
| 2000+ | 23.01 грн |
| TC389QP160F300SAELXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 10MB FLASH 516FBGA
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 516-FBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-FBGA-516-1
Description: IC MCU 32BIT 10MB FLASH 516FBGA
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 516-FBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-FBGA-516-1
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| TC387QP160F300SAEKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 10MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Description: IC MCU 32BIT 10MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
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| TC389QP160F300SAEKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 10MB FLASH 516FBGA
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 516-FBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-FBGA-516-1
Description: IC MCU 32BIT 10MB FLASH 516FBGA
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 516-FBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-FBGA-516-1
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| TC387QP160F300SAELXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 10MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Description: IC MCU 32BIT 10MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
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| AUIRF3710ZS |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| CY2305SXC-1T |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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| CY2305SXC-1T |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 761 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 364.48 грн |
| 10+ | 267.83 грн |
| 25+ | 246.87 грн |
| 100+ | 210.07 грн |
| 250+ | 199.76 грн |
| 500+ | 193.55 грн |
| D2450N06TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Description: DIODE STANDARD 600V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
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| BCM846SH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS 2NPN 65V 0.1A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Description: TRANS 2NPN 65V 0.1A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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| CY8C4124PVQ-442 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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| XDPE10280BG002XUMA1 |
Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-5
Packaging: Tape & Reel (TR)
Description: IFX PRIMARION CNTRLLER PG-VQFN-5
Packaging: Tape & Reel (TR)
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| XDPE10280BG002XUMA1 |
Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-5
Packaging: Cut Tape (CT)
Description: IFX PRIMARION CNTRLLER PG-VQFN-5
Packaging: Cut Tape (CT)
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 351.71 грн |
| 10+ | 304.49 грн |
| 25+ | 287.84 грн |
| 100+ | 234.11 грн |
| 250+ | 222.10 грн |
| 500+ | 199.29 грн |
| 1000+ | 165.32 грн |
| IR3588MTRPBF |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 28QFN
Packaging: Bulk
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12.5, VR12.6
Supplier Device Package: 28-QFN (4x4)
Description: IC REG CTRLR INTEL 2OUT 28QFN
Packaging: Bulk
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12.5, VR12.6
Supplier Device Package: 28-QFN (4x4)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 147+ | 167.12 грн |
| IR3581MTRPBF |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5
Supplier Device Package: 48-QFN (6x6)
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5
Supplier Device Package: 48-QFN (6x6)
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| IR3588MLN01TRP |
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Виробник: Infineon Technologies
Description: IC REG BUCK 28VQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: 28-QFN (4x4)
Synchronous Rectifier: No
Serial Interfaces: I²C
Output Phases: 4
Clock Sync: No
Number of Outputs: 2
Description: IC REG BUCK 28VQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: 28-QFN (4x4)
Synchronous Rectifier: No
Serial Interfaces: I²C
Output Phases: 4
Clock Sync: No
Number of Outputs: 2
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| IPD50N03S207ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| FF600R12IS4FBOSA1 |
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на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 35349.02 грн |
| IPG16N10S461ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 9µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 9µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
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| IPG16N10S461ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 9µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 16A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 9µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3669 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.26 грн |
| 10+ | 83.40 грн |
| 100+ | 56.12 грн |
| 500+ | 41.68 грн |
| 1000+ | 38.15 грн |
| 2000+ | 35.18 грн |
| CY7C1441KV33-133AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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| CYSHM35925I-M068LTIT |
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Виробник: Infineon Technologies
Description: PSOC4
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: PSOC4
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
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| IPD80P03P4L07ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 80A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 39.62 грн |
| 5000+ | 35.56 грн |
| 7500+ | 35.16 грн |
| IPD80P03P4L07ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 80A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16152 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.19 грн |
| 10+ | 78.23 грн |
| 100+ | 58.10 грн |
| 500+ | 43.39 грн |
| 1000+ | 40.39 грн |
| CY8C4145PVI-PS421 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 1095 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 361.93 грн |
| 10+ | 264.88 грн |
| 47+ | 232.34 грн |
| 141+ | 203.15 грн |
| 282+ | 195.85 грн |
| 517+ | 190.54 грн |
| 1034+ | 182.44 грн |
| IPSA70R950CEAKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 8.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3-347
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Description: MOSFET N-CH 700V 8.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3-347
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
на замовлення 34000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 654+ | 33.83 грн |
| CY9AF112NPMC-G-104MJE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT FLASH LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT FLASH LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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| CY4500 |
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Виробник: Infineon Technologies
Description: PROTOCOL ANALYZER COMP SYST
Packaging: Bulk
For Use With/Related Products: Computer Systems
Tool Type: Protocol Analyzer
Description: PROTOCOL ANALYZER COMP SYST
Packaging: Bulk
For Use With/Related Products: Computer Systems
Tool Type: Protocol Analyzer
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| CYPD4125-40LQXI |
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Виробник: Infineon Technologies
Description: IC MCD CCG4 WIRED 40-QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCD CCG4 WIRED 40-QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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| CYPD4126-24LQXI |
Виробник: Infineon Technologies
Description: TYPE-C - OTHERS
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 11
Description: TYPE-C - OTHERS
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 11
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| CYPD4126-24LQXIT |
Виробник: Infineon Technologies
Description: TYPE-C - OTHERS
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 11
Description: TYPE-C - OTHERS
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 11
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| CYPD5126-40LQXI |
Виробник: Infineon Technologies
Description: IC MCD CCG5C WIRED 40-QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCD CCG5C WIRED 40-QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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| CYPD4236-40LQXI |
Виробник: Infineon Technologies
Description: TYPE-C - OTHERS
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 25
Description: TYPE-C - OTHERS
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 25
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| CYPD4225-40LQXIT |
Виробник: Infineon Technologies
Description: TYPE-C - OTHERS
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 25
Description: TYPE-C - OTHERS
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 25
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| CYPD4236-40LQXIT |
Виробник: Infineon Technologies
Description: TYPE-C - OTHERS
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 25
Description: TYPE-C - OTHERS
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 25
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| CYPD4236-40LQXQ |
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Виробник: Infineon Technologies
Description: CCG4
Packaging: Tray
DigiKey Programmable: Not Verified
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 25
Description: CCG4
Packaging: Tray
DigiKey Programmable: Not Verified
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 25
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| S25FL128SDSBHA210 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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| S25FS512SDSBHA210 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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| S25FS512SFABHA210 |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 102 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 102 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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| S25FL512SAGBHA210 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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| IQE022N06LM5CGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
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| IQE022N06LM5CGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
на замовлення 3365 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 252.92 грн |
| 10+ | 160.90 грн |
| 100+ | 113.71 грн |
| 500+ | 86.74 грн |
| 1000+ | 80.31 грн |
| 2000+ | 76.91 грн |
| BSM200GA120DN2HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 1200V 300A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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| BSM200GB120DN2HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 290A 1400W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 1200V 290A 1400W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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| BSM200GA120DN2FSE32HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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| BSM200GA120DN2S7HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.55 W
Current - Collector Cutoff (Max): 4 mA
Description: IGBT MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.55 W
Current - Collector Cutoff (Max): 4 mA
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| IPT65R099CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-2
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 650V 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-2
Drain to Source Voltage (Vdss): 650 V
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 364.48 грн |
| 10+ | 233.14 грн |
| 100+ | 166.07 грн |
| 500+ | 147.41 грн |
| IPDQ65R099CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
на замовлення 739 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.91 грн |
| 10+ | 217.73 грн |
| 25+ | 200.23 грн |
| 100+ | 169.82 грн |
| 250+ | 161.19 грн |
| S29GL064S80FHIV10 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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| S29GL064S80DHV010 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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| S29GL064S80DHV030 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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| S29GL064S80DHV040 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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| S29GL064S80FHV010 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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| S29GL064S80FHV040 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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