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F4250R17MP4B11BPSA2 F4250R17MP4B11BPSA2 Infineon Technologies Infineon-F4-250R17MP4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae38a1647df7 Description: MEDIUM POWER ECONO AG-ECONOD-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+18227.22 грн
В кошику  од. на суму  грн.
ESD311U102NE6327XTSA1 ESD311U102NE6327XTSA1 Infineon Technologies Infineon-ESD311_U1_02N-DS-v01_00-en.pdf?fileId=5546d461464245d30146955421396a1d Description: TVS DIODE 15VWM 35VC PGTSNP22
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSNP-2-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 800W
Power Line Protection: No
товару немає в наявності
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ESD311U102NE6327XTSA1 ESD311U102NE6327XTSA1 Infineon Technologies Infineon-ESD311_U1_02N-DS-v01_00-en.pdf?fileId=5546d461464245d30146955421396a1d Description: TVS DIODE 15VWM 35VC PGTSNP22
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSNP-2-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 800W
Power Line Protection: No
на замовлення 7485 шт:
термін постачання 21-31 дні (днів)
15+21.49 грн
19+16.32 грн
100+13.50 грн
500+11.61 грн
1000+10.08 грн
Мінімальне замовлення: 15
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CY8C3244LTI-123T CY8C3244LTI-123T Infineon Technologies Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960 Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
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CY8C3244LTI-123T CY8C3244LTI-123T Infineon Technologies Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960 Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 1984 шт:
термін постачання 21-31 дні (днів)
1+646.20 грн
10+562.03 грн
25+535.88 грн
100+436.65 грн
250+417.03 грн
500+380.23 грн
1000+325.74 грн
В кошику  од. на суму  грн.
CY8C3244LTI-123 CY8C3244LTI-123 Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
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FD250R65KE3KNOSA1 FD250R65KE3KNOSA1 Infineon Technologies Infineon-FD250R65KE3_K-DS-v03_00-en_de.pdf?fileId=db3a3043382e8373013895afab4b16b1 Description: IGBT MOD 6500V 250A 4800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 69 nF @ 25 V
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S6BT112A02SSBB002 S6BT112A02SSBB002 Infineon Technologies Infineon-S6BT112A01_S6BT112A02_ASSP_CXPI_Transceiver_IC_for_Automotive_Network_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1112c66d5&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC TRANSCEIVER 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5.3V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 500 mV
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S6BT112A02SSBB002 S6BT112A02SSBB002 Infineon Technologies Infineon-S6BT112A01_S6BT112A02_ASSP_CXPI_Transceiver_IC_for_Automotive_Network_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1112c66d5&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC TRANSCEIVER 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5.3V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 500 mV
на замовлення 1244 шт:
термін постачання 21-31 дні (днів)
1+518.07 грн
10+384.55 грн
25+355.98 грн
100+304.63 грн
250+290.58 грн
500+282.12 грн
В кошику  од. на суму  грн.
S6BT112A01SSBB002 S6BT112A01SSBB002 Infineon Technologies Infineon-S6BT112A01_S6BT112A02_ASSP_CXPI_Transceiver_IC_for_Automotive_Network_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1112c66d5&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC TRANSCEIVER 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5.3V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 500 mV
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ISC035N10NM5LF2ATMA1 ISC035N10NM5LF2ATMA1 Infineon Technologies Infineon-ISC035N10NM5LF2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018be59ac2cd3bef Description: ISC035N10NM5LF2ATMA1 MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
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ISC035N10NM5LF2ATMA1 ISC035N10NM5LF2ATMA1 Infineon Technologies Infineon-ISC035N10NM5LF2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018be59ac2cd3bef Description: ISC035N10NM5LF2ATMA1 MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
на замовлення 4471 шт:
термін постачання 21-31 дні (днів)
1+356.52 грн
10+227.68 грн
100+161.90 грн
500+125.61 грн
1000+120.37 грн
В кошику  од. на суму  грн.
IPP030N10N5XKSA1 IPP030N10N5XKSA1 Infineon Technologies Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+329.47 грн
50+165.85 грн
100+151.24 грн
500+139.84 грн
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EVAL2ED2742S01GM1TOBO1 EVAL2ED2742S01GM1TOBO1 Infineon Technologies Infineon-UG-2023-08-EVAL-2ED2742S01GM1-UserManual-v01_00-EN.pdf Description: EVAL BOARD FOR 2ED2742S01
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2ED2742S01
Supplied Contents: Board(s)
Primary Attributes: 24V ~ 72V Supply
Embedded: Yes, MCU
Contents: Board(s)
Secondary Attributes: On-Board LEDs, Test Points
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8108.50 грн
В кошику  од. на суму  грн.
MB90F342CASPFR-GS-N2E1 MB90F342CASPFR-GS-N2E1 Infineon Technologies Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 82
DigiKey Programmable: Not Verified
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MB90F342CASPFR-GSE1 MB90F342CASPFR-GSE1 Infineon Technologies Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 82
DigiKey Programmable: Not Verified
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XMC1301T038X0064ABXUMA2 XMC1301T038X0064ABXUMA2 Infineon Technologies Infineon-XMC1000_Datasheet_Addendum-DS-v01_00-EN.pdf?fileId=5546d46253a864fe0153cce7c2ee0312 Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
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PVU414SPBF PVU414SPBF Infineon Technologies pvu414.pdf?fileId=5546d462533600a4015356844deb2976 Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 140 mA
Supplier Device Package: 6-SMT
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 1836 шт:
термін постачання 21-31 дні (днів)
1+456.79 грн
10+391.52 грн
25+373.91 грн
50+338.86 грн
100+327.24 грн
250+312.46 грн
500+296.78 грн
1000+286.58 грн
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PVU414PBF PVU414PBF Infineon Technologies pvu414.pdf?fileId=5546d462533600a4015356844deb2976 description Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 140 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
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CY9AF131KAPMC-G-UNE2 CY9AF131KAPMC-G-UNE2 Infineon Technologies download Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1+633.46 грн
10+551.15 грн
25+525.49 грн
80+428.22 грн
250+408.98 грн
500+372.89 грн
1000+319.45 грн
В кошику  од. на суму  грн.
EVALM7HVIGBTPFCINV4TOBO1 Infineon Technologies Infineon-IKB06N60T-DataSheet-v02_05-EN.pdf?fileId=db3a304412b407950112b4286b603df2 Description: EVAL KIT
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Motors (PMSM)
Embedded: No
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+5122.63 грн
В кошику  од. на суму  грн.
IGQ100N120S7XKSA1 IGQ100N120S7XKSA1 Infineon Technologies Infineon-IGQ100N120S7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a2439786d Description: IGBT TRENCH 1200V 188A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-55
IGBT Type: Trench
Td (on/off) @ 25°C: 38ns/200ns
Switching Energy: 6.87mJ (on), 4.71mJ (off)
Test Condition: 600V, 100A, 1.6Ohm, 15V
Gate Charge: 610 nC
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 824 W
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
1+1054.45 грн
30+617.67 грн
120+530.51 грн
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SIGC109T120R3 Infineon Technologies INFNS12632-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
28+792.80 грн
Мінімальне замовлення: 28
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A2C04189600 Infineon Technologies Description: IC MCU 32BIT 176LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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IRMCF312TY IRMCF312TY Infineon Technologies IRMCF312.pdf Description: IC MOTOR DRIVER 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (6)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-QFP (14x14)
Motor Type - AC, DC: AC, Synchronous
на замовлення 814 шт:
термін постачання 21-31 дні (днів)
1+625.51 грн
10+467.23 грн
25+433.50 грн
100+372.05 грн
250+355.47 грн
500+345.47 грн
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IRLB3036PBFXKMA1 IRLB3036PBFXKMA1 Infineon Technologies Infineon-IRLB3036-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153566033ea2589 Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
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IRLB4030PBFXKMA1 IRLB4030PBFXKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
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BSB104N08NP3GXUSA1 BSB104N08NP3GXUSA1 Infineon Technologies Infineon-BSB104N08NP3_G-DS-v02_01-en.pdf?fileId=db3a304341e0aed00141efc548ca1b2b Description: MOSFET N-CH 80V 13A/50A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
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CY8C4147LQE-S443T CY8C4147LQE-S443T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CY8C4147LQE-S443T CY8C4147LQE-S443T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)
1+713.84 грн
10+621.34 грн
25+592.38 грн
100+482.70 грн
250+461.01 грн
500+420.33 грн
1000+360.10 грн
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CY8C4147LCE-HV423T Infineon Technologies Description: PSoC4
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 2x16/20b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 32-QFN (6x6)
Number of I/O: 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+393.09 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CY8C4147LCE-HV423T Infineon Technologies Description: PSoC4
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 2x16/20b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 32-QFN (6x6)
Number of I/O: 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2797 шт:
термін постачання 21-31 дні (днів)
1+719.41 грн
10+626.02 грн
25+596.91 грн
100+486.40 грн
250+464.54 грн
500+423.56 грн
1000+362.86 грн
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CYBLE-224110-EVAL CYBLE-224110-EVAL Infineon Technologies download Description: RF TXRX MOD BLUETOOTH 4.1
Packaging: Bulk
For Use With/Related Products: CYBLE-224110-00
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+1496.12 грн
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CY3250-24X33 CY3250-24X33 Infineon Technologies Description: KIT EMULATION ICE POD PSOC DEBUG
Packaging: Box
For Use With/Related Products: CY3215-DK, CY8C24x33
Accessory Type: Emulator Flex Pod Kit
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+7163.08 грн
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CY2DL1510AZI CY2DL1510AZI Infineon Technologies download Description: IC CLK BUFFER 1:10 1.5GHZ 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVDS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:10
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 1.5 GHz
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CY62256VLL-70ZXC CY62256VLL-70ZXC Infineon Technologies CY62256V_RevF.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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SK-FM4-176L-S6E2CC SK-FM4-176L-S6E2CC Infineon Technologies download Description: S6E2CCA EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: S6E2CCA
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SK-FM4-176L-S6E2CC-ETH SK-FM4-176L-S6E2CC-ETH Infineon Technologies download Description: S6E2CCA EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: S6E2CCA
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SK-FM4-176L-S6E2CC-VOI SK-FM4-176L-S6E2CC-VOI Infineon Technologies FM4_SKG_Rev1.1_3-26-15.pdf Description: S6E2CCA EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: S6E2CCA
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CYRF6936-40LTXC CYRF6936-40LTXC Infineon Technologies CYRF6936.pdf Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 18.4mA ~ 21.2mA
Data Rate (Max): 1Mbps
Current - Transmitting: 20.8mA ~ 34.1mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 4
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
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CYRF69103-40LTXC CYRF69103-40LTXC Infineon Technologies download Description: IC RF TXRX+MCU ISM>1GHZ 40VFQFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 18.9mA ~ 21.9mA
Data Rate (Max): 1Mbps
Current - Transmitting: 21.2mA ~ 39.9mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 15
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
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S29GL256P90FFCR13 S29GL256P90FFCR13 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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IAUZ40N06S5N105ATMA1 IAUZ40N06S5N105ATMA1 Infineon Technologies Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4 Description: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4998 шт:
термін постачання 21-31 дні (днів)
4+89.93 грн
10+54.56 грн
100+36.01 грн
500+26.30 грн
1000+23.89 грн
2000+21.86 грн
Мінімальне замовлення: 4
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S29WS064RABBHW010 S29WS064RABBHW010 Infineon Technologies Infineon-S29WS064R_64_Mbit_(4M_x_16-bit)_MirrorBit_Flash_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed54aaf5472&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_i Description: IC FLASH 64MBIT PARALLEL 84FBGA
Packaging: Tray
Package / Case: 84-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 84-FBGA (11.6x8)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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IRFB260NPBFAKMA1 IRFB260NPBFAKMA1 Infineon Technologies Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 25 V
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FZ3600R17HP4HOSA2 FZ3600R17HP4HOSA2 Infineon Technologies Infineon-FZ3600R17HP4-DS-v02_02-en_de.pdf?fileId=db3a30432313ff5e01235601c5db1610 Description: IGBT MODULE 1700V 3600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 3600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 21000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+96491.12 грн
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IRAM136-3023B IRAM136-3023B Infineon Technologies IRAM136-3023B.pdf Description: IC INTEGRATD PWR HYBRID 30A 150V
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 150 V
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BSB165N15NZ3GXUMA3 Infineon Technologies Infineon-BSB165N15NZ3-DS-v02_02-en.pdf?fileId=db3a30432e779412012e7b04a1353843 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
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BSB165N15NZ3GXUMA2 Infineon Technologies Infineon-BSB165N15NZ3-DS-v02_02-en.pdf?fileId=db3a30432e779412012e7b04a1353843 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
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CY7C1413KV18-250BZCT CY7C1413KV18-250BZCT Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1413KV18-333BZI CY7C1413KV18-333BZI Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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IMDQ75R140M1HXUMA1 IMDQ75R140M1HXUMA1 Infineon Technologies Infineon-IMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae203c577e8b Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
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IMDQ75R140M1HXUMA1 IMDQ75R140M1HXUMA1 Infineon Technologies Infineon-IMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae203c577e8b Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)
1+424.96 грн
10+269.14 грн
100+196.82 грн
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IMDQ75R040M1HXUMA1 IMDQ75R040M1HXUMA1 Infineon Technologies Infineon-IMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae16d7a37e64 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
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IMDQ75R040M1HXUMA1 IMDQ75R040M1HXUMA1 Infineon Technologies Infineon-IMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae16d7a37e64 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
на замовлення 659 шт:
термін постачання 21-31 дні (днів)
1+676.44 грн
10+505.93 грн
25+469.64 грн
100+403.31 грн
250+385.47 грн
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IMDQ75R016M1HXUMA1 IMDQ75R016M1HXUMA1 Infineon Technologies Infineon-IMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b61330f5e21f8 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
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IMDQ75R016M1HXUMA1 IMDQ75R016M1HXUMA1 Infineon Technologies Infineon-IMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b61330f5e21f8 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
на замовлення 538 шт:
термін постачання 21-31 дні (днів)
1+1445.19 грн
10+1021.37 грн
100+906.82 грн
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BSB104N08NP3GXUMA3 Infineon Technologies Infineon-BSB104N08NP3%20G-DataSheet-v02_02-EN.pdf?fileId=db3a304341e0aed00141efc548ca1b2b Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
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IRFB4228PBFXKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
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ESD120B1W0201E6327XTSA1 ESD120B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD120-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172cccee8570172 Description: TVS DIODE 2.1VWM 5.7V PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.24pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.1V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 9W
Power Line Protection: No
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F4250R17MP4B11BPSA2 Infineon-F4-250R17MP4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae38a1647df7
F4250R17MP4B11BPSA2
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18227.22 грн
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ESD311U102NE6327XTSA1 Infineon-ESD311_U1_02N-DS-v01_00-en.pdf?fileId=5546d461464245d30146955421396a1d
ESD311U102NE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 15VWM 35VC PGTSNP22
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSNP-2-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 800W
Power Line Protection: No
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ESD311U102NE6327XTSA1 Infineon-ESD311_U1_02N-DS-v01_00-en.pdf?fileId=5546d461464245d30146955421396a1d
ESD311U102NE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 15VWM 35VC PGTSNP22
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 210pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSNP-2-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 800W
Power Line Protection: No
на замовлення 7485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.49 грн
19+16.32 грн
100+13.50 грн
500+11.61 грн
1000+10.08 грн
Мінімальне замовлення: 15
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CY8C3244LTI-123T Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960
CY8C3244LTI-123T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
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CY8C3244LTI-123T Infineon-PSoC_3_CY8C32_Programmable_System-on-Chip-DataSheet-v28_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7aa5b3f68&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_1_2_960
CY8C3244LTI-123T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 1984 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+646.20 грн
10+562.03 грн
25+535.88 грн
100+436.65 грн
250+417.03 грн
500+380.23 грн
1000+325.74 грн
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CY8C3244LTI-123 download
CY8C3244LTI-123
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
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FD250R65KE3KNOSA1 Infineon-FD250R65KE3_K-DS-v03_00-en_de.pdf?fileId=db3a3043382e8373013895afab4b16b1
FD250R65KE3KNOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 6500V 250A 4800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 69 nF @ 25 V
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S6BT112A02SSBB002 Infineon-S6BT112A01_S6BT112A02_ASSP_CXPI_Transceiver_IC_for_Automotive_Network_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1112c66d5&utm_source=cypress&utm_medium=referral&utm_campaign
S6BT112A02SSBB002
Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5.3V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 500 mV
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S6BT112A02SSBB002 Infineon-S6BT112A01_S6BT112A02_ASSP_CXPI_Transceiver_IC_for_Automotive_Network_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1112c66d5&utm_source=cypress&utm_medium=referral&utm_campaign
S6BT112A02SSBB002
Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5.3V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 500 mV
на замовлення 1244 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+518.07 грн
10+384.55 грн
25+355.98 грн
100+304.63 грн
250+290.58 грн
500+282.12 грн
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S6BT112A01SSBB002 Infineon-S6BT112A01_S6BT112A02_ASSP_CXPI_Transceiver_IC_for_Automotive_Network_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1112c66d5&utm_source=cypress&utm_medium=referral&utm_campaign
S6BT112A01SSBB002
Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5.3V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: CXPI
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 500 mV
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ISC035N10NM5LF2ATMA1 Infineon-ISC035N10NM5LF2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018be59ac2cd3bef
ISC035N10NM5LF2ATMA1
Виробник: Infineon Technologies
Description: ISC035N10NM5LF2ATMA1 MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
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ISC035N10NM5LF2ATMA1 Infineon-ISC035N10NM5LF2-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018be59ac2cd3bef
ISC035N10NM5LF2ATMA1
Виробник: Infineon Technologies
Description: ISC035N10NM5LF2ATMA1 MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
на замовлення 4471 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+356.52 грн
10+227.68 грн
100+161.90 грн
500+125.61 грн
1000+120.37 грн
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IPP030N10N5XKSA1 Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49
IPP030N10N5XKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+329.47 грн
50+165.85 грн
100+151.24 грн
500+139.84 грн
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EVAL2ED2742S01GM1TOBO1 Infineon-UG-2023-08-EVAL-2ED2742S01GM1-UserManual-v01_00-EN.pdf
EVAL2ED2742S01GM1TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2ED2742S01
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2ED2742S01
Supplied Contents: Board(s)
Primary Attributes: 24V ~ 72V Supply
Embedded: Yes, MCU
Contents: Board(s)
Secondary Attributes: On-Board LEDs, Test Points
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8108.50 грн
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MB90F342CASPFR-GS-N2E1
MB90F342CASPFR-GS-N2E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 82
DigiKey Programmable: Not Verified
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MB90F342CASPFR-GSE1
MB90F342CASPFR-GSE1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 82
DigiKey Programmable: Not Verified
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XMC1301T038X0064ABXUMA2 Infineon-XMC1000_Datasheet_Addendum-DS-v01_00-EN.pdf?fileId=5546d46253a864fe0153cce7c2ee0312
XMC1301T038X0064ABXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
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PVU414SPBF pvu414.pdf?fileId=5546d462533600a4015356844deb2976
PVU414SPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 140 mA
Supplier Device Package: 6-SMT
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 1836 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+456.79 грн
10+391.52 грн
25+373.91 грн
50+338.86 грн
100+327.24 грн
250+312.46 грн
500+296.78 грн
1000+286.58 грн
В кошику  од. на суму  грн.
PVU414PBF description pvu414.pdf?fileId=5546d462533600a4015356844deb2976
PVU414PBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 140 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
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CY9AF131KAPMC-G-UNE2 download
CY9AF131KAPMC-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+633.46 грн
10+551.15 грн
25+525.49 грн
80+428.22 грн
250+408.98 грн
500+372.89 грн
1000+319.45 грн
В кошику  од. на суму  грн.
EVALM7HVIGBTPFCINV4TOBO1 Infineon-IKB06N60T-DataSheet-v02_05-EN.pdf?fileId=db3a304412b407950112b4286b603df2
Виробник: Infineon Technologies
Description: EVAL KIT
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Primary Attributes: Motors (PMSM)
Embedded: No
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5122.63 грн
В кошику  од. на суму  грн.
IGQ100N120S7XKSA1 Infineon-IGQ100N120S7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c850f4bee0185a59a2439786d
IGQ100N120S7XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 188A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-55
IGBT Type: Trench
Td (on/off) @ 25°C: 38ns/200ns
Switching Energy: 6.87mJ (on), 4.71mJ (off)
Test Condition: 600V, 100A, 1.6Ohm, 15V
Gate Charge: 610 nC
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 824 W
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1054.45 грн
30+617.67 грн
120+530.51 грн
В кошику  од. на суму  грн.
SIGC109T120R3 INFNS12632-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
28+792.80 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
A2C04189600
Виробник: Infineon Technologies
Description: IC MCU 32BIT 176LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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IRMCF312TY IRMCF312.pdf
IRMCF312TY
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (6)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-QFP (14x14)
Motor Type - AC, DC: AC, Synchronous
на замовлення 814 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+625.51 грн
10+467.23 грн
25+433.50 грн
100+372.05 грн
250+355.47 грн
500+345.47 грн
В кошику  од. на суму  грн.
IRLB3036PBFXKMA1 Infineon-IRLB3036-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153566033ea2589
IRLB3036PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
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IRLB4030PBFXKMA1
IRLB4030PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
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BSB104N08NP3GXUSA1 Infineon-BSB104N08NP3_G-DS-v02_01-en.pdf?fileId=db3a304341e0aed00141efc548ca1b2b
BSB104N08NP3GXUSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 13A/50A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
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CY8C4147LQE-S443T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQE-S443T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CY8C4147LQE-S443T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQE-S443T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+713.84 грн
10+621.34 грн
25+592.38 грн
100+482.70 грн
250+461.01 грн
500+420.33 грн
1000+360.10 грн
В кошику  од. на суму  грн.
CY8C4147LCE-HV423T
Виробник: Infineon Technologies
Description: PSoC4
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 2x16/20b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 32-QFN (6x6)
Number of I/O: 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+393.09 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CY8C4147LCE-HV423T
Виробник: Infineon Technologies
Description: PSoC4
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 2x16/20b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SmartCard, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 32-QFN (6x6)
Number of I/O: 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2797 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+719.41 грн
10+626.02 грн
25+596.91 грн
100+486.40 грн
250+464.54 грн
500+423.56 грн
1000+362.86 грн
В кошику  од. на суму  грн.
CYBLE-224110-EVAL download
CYBLE-224110-EVAL
Виробник: Infineon Technologies
Description: RF TXRX MOD BLUETOOTH 4.1
Packaging: Bulk
For Use With/Related Products: CYBLE-224110-00
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1496.12 грн
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CY3250-24X33
CY3250-24X33
Виробник: Infineon Technologies
Description: KIT EMULATION ICE POD PSOC DEBUG
Packaging: Box
For Use With/Related Products: CY3215-DK, CY8C24x33
Accessory Type: Emulator Flex Pod Kit
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7163.08 грн
В кошику  од. на суму  грн.
CY2DL1510AZI download
CY2DL1510AZI
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:10 1.5GHZ 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVDS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:10
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 1.5 GHz
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CY62256VLL-70ZXC CY62256V_RevF.pdf
CY62256VLL-70ZXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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SK-FM4-176L-S6E2CC download
SK-FM4-176L-S6E2CC
Виробник: Infineon Technologies
Description: S6E2CCA EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: S6E2CCA
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SK-FM4-176L-S6E2CC-ETH download
SK-FM4-176L-S6E2CC-ETH
Виробник: Infineon Technologies
Description: S6E2CCA EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: S6E2CCA
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SK-FM4-176L-S6E2CC-VOI FM4_SKG_Rev1.1_3-26-15.pdf
SK-FM4-176L-S6E2CC-VOI
Виробник: Infineon Technologies
Description: S6E2CCA EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: S6E2CCA
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CYRF6936-40LTXC CYRF6936.pdf
CYRF6936-40LTXC
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 18.4mA ~ 21.2mA
Data Rate (Max): 1Mbps
Current - Transmitting: 20.8mA ~ 34.1mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 4
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
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CYRF69103-40LTXC download
CYRF69103-40LTXC
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 40VFQFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 18.9mA ~ 21.9mA
Data Rate (Max): 1Mbps
Current - Transmitting: 21.2mA ~ 39.9mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 15
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
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S29GL256P90FFCR13 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL256P90FFCR13
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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IAUZ40N06S5N105ATMA1 Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4
IAUZ40N06S5N105ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.93 грн
10+54.56 грн
100+36.01 грн
500+26.30 грн
1000+23.89 грн
2000+21.86 грн
Мінімальне замовлення: 4
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S29WS064RABBHW010 Infineon-S29WS064R_64_Mbit_(4M_x_16-bit)_MirrorBit_Flash_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed54aaf5472&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_i
S29WS064RABBHW010
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 84FBGA
Packaging: Tray
Package / Case: 84-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 84-FBGA (11.6x8)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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IRFB260NPBFAKMA1
IRFB260NPBFAKMA1
Виробник: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 25 V
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FZ3600R17HP4HOSA2 Infineon-FZ3600R17HP4-DS-v02_02-en_de.pdf?fileId=db3a30432313ff5e01235601c5db1610
FZ3600R17HP4HOSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 3600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 3600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 21000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+96491.12 грн
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IRAM136-3023B IRAM136-3023B.pdf
IRAM136-3023B
Виробник: Infineon Technologies
Description: IC INTEGRATD PWR HYBRID 30A 150V
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 150 V
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BSB165N15NZ3GXUMA3 Infineon-BSB165N15NZ3-DS-v02_02-en.pdf?fileId=db3a30432e779412012e7b04a1353843
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
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BSB165N15NZ3GXUMA2 Infineon-BSB165N15NZ3-DS-v02_02-en.pdf?fileId=db3a30432e779412012e7b04a1353843
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
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CY7C1413KV18-250BZCT Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1413KV18-250BZCT
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1413KV18-333BZI Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1413KV18-333BZI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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IMDQ75R140M1HXUMA1 Infineon-IMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae203c577e8b
IMDQ75R140M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
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IMDQ75R140M1HXUMA1 Infineon-IMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae203c577e8b
IMDQ75R140M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+424.96 грн
10+269.14 грн
100+196.82 грн
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IMDQ75R040M1HXUMA1 Infineon-IMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae16d7a37e64
IMDQ75R040M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
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IMDQ75R040M1HXUMA1 Infineon-IMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae16d7a37e64
IMDQ75R040M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
на замовлення 659 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+676.44 грн
10+505.93 грн
25+469.64 грн
100+403.31 грн
250+385.47 грн
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IMDQ75R016M1HXUMA1 Infineon-IMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b61330f5e21f8
IMDQ75R016M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
товару немає в наявності
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IMDQ75R016M1HXUMA1 Infineon-IMDQ75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b61330f5e21f8
IMDQ75R016M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A
Power Dissipation (Max): 384W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
на замовлення 538 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1445.19 грн
10+1021.37 грн
100+906.82 грн
В кошику  од. на суму  грн.
BSB104N08NP3GXUMA3 Infineon-BSB104N08NP3%20G-DataSheet-v02_02-EN.pdf?fileId=db3a304341e0aed00141efc548ca1b2b
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: MG-WDSON-2-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
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IRFB4228PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
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ESD120B1W0201E6327XTSA1 Infineon-ESD120-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172cccee8570172
ESD120B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 2.1VWM 5.7V PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.24pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.1V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 9W
Power Line Protection: No
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