Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149894) > Сторінка 695 з 2499
Фото | Назва | Виробник | Інформація |
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BCX5116H6433XTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT89 Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 2 W Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BCX51H6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT89 Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 2 W Qualification: AEC-Q101 |
на замовлення 63190 шт: термін постачання 21-31 дні (днів) |
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BCX5116H6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT89 Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 2 W Qualification: AEC-Q101 |
на замовлення 126285 шт: термін постачання 21-31 дні (днів) |
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IRF2204SPBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
на замовлення 903 шт: термін постачання 21-31 дні (днів) |
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TDA48632XKLA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C Voltage - Supply: 12.5V ~ 20V Mode: Discontinuous Conduction (DCM) Supplier Device Package: PG-DIP-8 Current - Startup: 20 µA |
на замовлення 12393 шт: термін постачання 21-31 дні (днів) |
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BSC152N15LS5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 60µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSC105N15LS5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 91µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CY62128ELL-45SXI | Infineon Technologies |
![]() Packaging: Tube Package / Case: 32-SOIC (0.445", 11.30mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOIC Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 7056 шт: термін постачання 21-31 дні (днів) |
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IRS2011PBF | Infineon Technologies |
![]() ![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 25ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 1A, 1A DigiKey Programmable: Not Verified |
на замовлення 8900 шт: термін постачання 21-31 дні (днів) |
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IGC18T120T8LX1SA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A Supplier Device Package: Die IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SKB15N60ATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 279 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 32ns/234ns Switching Energy: 570µJ Test Condition: 400V, 15A, 21Ohm, 15V Gate Charge: 76 nC Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 62 A Power - Max: 139 W |
на замовлення 6373 шт: термін постачання 21-31 дні (днів) |
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CY91F587LBPMC-GTE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 1.0625MB (1.0625M x 8) RAM Size: 104K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 111 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SPS04N60C3BKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 200µA Supplier Device Package: PG-TO251-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SPP04N60C3XKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 200µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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BC860CE6359HTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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BC860BWH6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
на замовлення 68537 шт: термін постачання 21-31 дні (днів) |
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BC860CWH6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
на замовлення 610000 шт: термін постачання 21-31 дні (днів) |
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BC860BE6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 380088 шт: термін постачання 21-31 дні (днів) |
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CY7C1019CV33-12VC | Infineon Technologies |
![]() Packaging: Tube Package / Case: 32-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY62167G18-55ZXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTG70902EPLDAUGHBRDTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTG7090-2EPL |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BTG70901EPLDAUGHBRDTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTG7090-1EPL |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BTG70502EPLDAUGHBRDTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTG7050-2EPL |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BTG70501EPLDAUGHBRDTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTG7050-1EPL |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FF450R17ME3BOSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 605 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 2250 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
FZ1500R33HE3S6BOSA1 | Infineon Technologies |
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA NTC Thermistor: No Supplier Device Package: AG-IHVB190 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1500 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 2400000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 280 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ISP25DP06NMXTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ISP25DP06NMXTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V |
на замовлення 3703 шт: термін постачання 21-31 дні (днів) |
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BAT6307WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-82A, SOT-343 Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz Voltage - Peak Reverse (Max): 3V Supplier Device Package: PG-SOT343-3D Current - Max: 100 mA Power Dissipation (Max): 100 mW |
на замовлення 88581 шт: термін постачання 21-31 дні (днів) |
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IPA60R145CFD7XKSA1 | Infineon Technologies |
![]() Packaging: Bulk Current - Continuous Drain (Id) @ 25°C: 9A (Tc) |
на замовлення 928 шт: термін постачання 21-31 дні (днів) |
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AUIRL3705ZS | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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AUIRL3705ZS | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFP4310ZPBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.037mA Supplier Device Package: PG-TO247-3-901 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2EDL8033G4BXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 3A, 6A Technology: Magnetic Coupling Current - Output High, Low: 3A, 6A Supplier Device Package: PG-VDSON-8-5 Rise / Fall Time (Typ): 195ns, 106ns Propagation Delay tpLH / tpHL (Max): 35ns, 35ns Number of Channels: 2 Voltage - Output Supply: 8V ~ 17V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2EDL8033G4BXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 3A, 6A Technology: Magnetic Coupling Current - Output High, Low: 3A, 6A Supplier Device Package: PG-VDSON-8-5 Rise / Fall Time (Typ): 195ns, 106ns Propagation Delay tpLH / tpHL (Max): 35ns, 35ns Number of Channels: 2 Voltage - Output Supply: 8V ~ 17V |
на замовлення 4917 шт: термін постачання 21-31 дні (днів) |
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CG10218AA | Infineon Technologies |
Description: IC FRAM Packaging: Tube Memory Format: FRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
CG10218AAT | Infineon Technologies |
Description: IC FRAM Packaging: Tape & Reel (TR) Memory Format: FRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCP5116H6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT223-4-24 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 2 W |
на замовлення 23000 шт: термін постачання 21-31 дні (днів) |
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BC848CE6433HTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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AUIRF3805 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3585 шт: термін постачання 21-31 дні (днів) |
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AUIRF3805L | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17404 шт: термін постачання 21-31 дні (днів) |
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SPA21N50C3XKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Power Dissipation (Max): 34.5W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO220-3-31 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
на замовлення 1520 шт: термін постачання 21-31 дні (днів) |
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SP4001101XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Applications: Board Mount |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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SP4001101XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Applications: Board Mount |
на замовлення 2441 шт: термін постачання 21-31 дні (днів) |
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MB9BFD18TPMC-GK7E1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 32x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 154 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE9180D32QKXUMA1 | Infineon Technologies |
Description: DRIVER_IC Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 6V ~ 60V Supplier Device Package: PG-LQFP-64-27 Rise / Fall Time (Typ): 35ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 2A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE9180D32QKXUMA1 | Infineon Technologies |
Description: DRIVER_IC Packaging: Cut Tape (CT) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Voltage - Supply: 6V ~ 60V Supplier Device Package: PG-LQFP-64-27 Rise / Fall Time (Typ): 35ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 2A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY9AFB44NBBGL-GK9E1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 112-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 112-PFBGA (10x10) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S29GL01GS10FHSS23 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGA Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S29GL01GS10FHSS33 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGA Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S29GL01GS10FHSS30 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CYAT81688-100AS61T | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 100-TQFP (14x14) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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CYAT81688-100AS61T | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 100-TQFP (14x14) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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CYAT81688-100AS61ZT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 100-TQFP (14x14) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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CYAT81688-100AS61ZT | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 100-TQFP (14x14) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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CYAT81688-100AA71 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 100-TQFP (14x14) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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CYAT81688-100AS61 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 100-TQFP (14x14) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
на замовлення 897 шт: термін постачання 21-31 дні (днів) |
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CYAT81688-100AS61KH | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 100-TQFP (14x14) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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CY8C4127AXI-S453 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 44-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Number of I/O: 37 DigiKey Programmable: Not Verified |
на замовлення 1180 шт: термін постачання 21-31 дні (днів) |
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CY8C4148AZI-S453 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 38 DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BCX5116H6433XTMA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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2233+ | 9.07 грн |
BCX51H6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 63190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1893+ | 12.11 грн |
BCX5116H6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 126285 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1553+ | 13.26 грн |
IRF2204SPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 170A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Description: MOSFET N-CH 40V 170A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
на замовлення 903 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
171+ | 122.84 грн |
TDA48632XKLA1 |
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Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 20 µA
Description: IC PFC CTRLR DCM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 20 µA
на замовлення 12393 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
517+ | 40.33 грн |
BSC152N15LS5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 60µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 60µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V
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BSC105N15LS5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 91µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 91µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 68.20 грн |
CY62128ELL-45SXI |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 7056 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 181.80 грн |
10+ | 163.45 грн |
25+ | 158.68 грн |
50+ | 145.48 грн |
100+ | 142.07 грн |
250+ | 137.57 грн |
500+ | 131.99 грн |
1000+ | 128.70 грн |
5000+ | 124.09 грн |
IRS2011PBF | ![]() |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
на замовлення 8900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
169+ | 130.35 грн |
IGC18T120T8LX1SA2 |
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Виробник: Infineon Technologies
Description: IGBT 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Description: IGBT 1200V 15A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
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од. на суму грн.
SKB15N60ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 600V 31A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
Description: IGBT NPT 600V 31A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
на замовлення 6373 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
213+ | 103.25 грн |
CY91F587LBPMC-GTE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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В кошику
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SPS04N60C3BKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
379+ | 55.14 грн |
SPP04N60C3XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
247+ | 85.16 грн |
BC860CE6359HTMA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10764+ | 2.20 грн |
BC860BWH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 68537 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7493+ | 2.93 грн |
BC860CWH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 610000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7493+ | 2.93 грн |
BC860BE6327HTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 380088 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7860+ | 2.93 грн |
CY7C1019CV33-12VC |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
CY62167G18-55ZXIT |
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Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BTG70902EPLDAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: BTG7090-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-2EPL
Description: BTG7090-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-2EPL
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3491.54 грн |
BTG70901EPLDAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: BTG7090-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-1EPL
Description: BTG7090-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-1EPL
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3491.54 грн |
BTG70502EPLDAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: BTG7050-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-2EPL
Description: BTG7050-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-2EPL
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3526.47 грн |
BTG70501EPLDAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: BTG7050-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-1EPL
Description: BTG7050-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-1EPL
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3491.54 грн |
FF450R17ME3BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 605A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 605 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
Description: IGBT MOD 1700V 605A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 605 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
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FZ1500R33HE3S6BOSA1 |
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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ISP25DP06NMXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 22.98 грн |
2000+ | 20.18 грн |
3000+ | 19.19 грн |
ISP25DP06NMXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
на замовлення 3703 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 80.18 грн |
10+ | 48.32 грн |
100+ | 31.64 грн |
500+ | 22.95 грн |
BAT6307WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 3V 100MW SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-3D
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
Description: DIODE SCHOTTKY 3V 100MW SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-3D
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
на замовлення 88581 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2840+ | 7.68 грн |
IPA60R145CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Description: HIGH POWER_NEW
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
на замовлення 928 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
190+ | 115.70 грн |
AUIRL3705ZS |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
216+ | 96.65 грн |
AUIRL3705ZS |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRFP4310ZPBFXKMA1 |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
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2EDL8033G4BXTMA1 |
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Виробник: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
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2EDL8033G4BXTMA1 |
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Виробник: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
на замовлення 4917 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 108.76 грн |
10+ | 76.45 грн |
25+ | 69.32 грн |
100+ | 57.73 грн |
250+ | 54.23 грн |
500+ | 52.12 грн |
1000+ | 49.56 грн |
2500+ | 47.76 грн |
BCP5116H6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT223-4-24
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Description: TRANS PNP 45V 1A PG-SOT223-4-24
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
на замовлення 23000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1947+ | 10.98 грн |
BC848CE6433HTMA1 |
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Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9306+ | 2.09 грн |
AUIRF3805 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 160A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 160A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3585 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
168+ | 124.46 грн |
AUIRF3805L |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 160A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 160A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17404 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
149+ | 140.45 грн |
SPA21N50C3XKSA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1520 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
124+ | 168.96 грн |
SP4001101XTMA1 |
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Виробник: Infineon Technologies
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Tape & Reel (TR)
Applications: Board Mount
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Tape & Reel (TR)
Applications: Board Mount
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 346.39 грн |
SP4001101XTMA1 |
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Виробник: Infineon Technologies
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Cut Tape (CT)
Applications: Board Mount
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Cut Tape (CT)
Applications: Board Mount
на замовлення 2441 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 593.04 грн |
10+ | 442.41 грн |
25+ | 410.19 грн |
100+ | 351.79 грн |
250+ | 335.97 грн |
500+ | 326.44 грн |
MB9BFD18TPMC-GK7E1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 154
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 154
DigiKey Programmable: Not Verified
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TLE9180D32QKXUMA1 |
Виробник: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
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TLE9180D32QKXUMA1 |
Виробник: Infineon Technologies
Description: DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
Description: DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
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CY9AFB44NBBGL-GK9E1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
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S29GL01GS10FHSS23 |
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS10FHSS33 |
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS10FHSS30 |
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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CYAT81688-100AS61T |
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Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 898.15 грн |
CYAT81688-100AS61T |
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Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1664.00 грн |
10+ | 1241.84 грн |
25+ | 1151.63 грн |
100+ | 987.74 грн |
250+ | 943.37 грн |
500+ | 916.64 грн |
CYAT81688-100AS61ZT |
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Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 977.75 грн |
CYAT81688-100AS61ZT |
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Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1664.00 грн |
10+ | 1241.84 грн |
25+ | 1151.63 грн |
100+ | 987.74 грн |
250+ | 943.37 грн |
500+ | 916.64 грн |
CYAT81688-100AA71 |
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Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1485.37 грн |
10+ | 1319.05 грн |
25+ | 1259.72 грн |
90+ | 1057.02 грн |
270+ | 1008.35 грн |
450+ | 959.67 грн |
CYAT81688-100AS61 |
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Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 897 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1331.36 грн |
10+ | 993.38 грн |
25+ | 921.30 грн |
90+ | 811.66 грн |
CYAT81688-100AS61KH |
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Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1331.36 грн |
10+ | 993.38 грн |
25+ | 921.30 грн |
90+ | 811.66 грн |
CY8C4127AXI-S453 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
на замовлення 1180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 405.68 грн |
10+ | 351.05 грн |
25+ | 331.88 грн |
160+ | 269.92 грн |
320+ | 256.08 грн |
480+ | 229.78 грн |
960+ | 190.61 грн |
CY8C4148AZI-S453 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 457.28 грн |
10+ | 397.53 грн |
25+ | 379.06 грн |
80+ | 308.87 грн |
250+ | 294.99 грн |
500+ | 268.96 грн |
1000+ | 230.42 грн |
2500+ | 221.88 грн |