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CY8C20336H-24LQXI CY8C20336H-24LQXI Infineon Technologies CY8C20336H%2C446H.pdf Description: IC PSOC CAPSENSE 24MHZ 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
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CY8C20336H-24LQXIT CY8C20336H-24LQXIT Infineon Technologies CY8C20336H%2C446H.pdf Description: MCU PSOC 8K FLASH 24MHZ 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
113+209.96 грн
Мінімальне замовлення: 113
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CY7C1441KV33-133AXM CY7C1441KV33-133AXM Infineon Technologies Infineon-CY7C1441KV33_Military_Temperature_36-Mbit_(1M_X_36)_Flow-Through_SRAM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee24a8f68c1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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AUIRF3305 AUIRF3305 Infineon Technologies IRSDS11391-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 140A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12137 шт:
термін постачання 21-31 дні (днів)
89+248.61 грн
Мінімальне замовлення: 89
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CY2308SXC-1H CY2308SXC-1H Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 714 шт:
термін постачання 21-31 дні (днів)
1+1054.28 грн
10+804.97 грн
48+734.29 грн
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CY2308SXC-4 CY2308SXC-4 Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2308SXC-2T CY2308SXC-2T Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2308SXC-3 CY2308SXC-3 Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2308SXC-1T CY2308SXC-1T Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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FF1500R17IP5BPSA1 FF1500R17IP5BPSA1 Infineon Technologies Infineon-FF1500R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f2e7f2c2c0002 Description: IGBT MODULE 1700V 1500A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 88 nF @ 25 V
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
1+72812.55 грн
В кошику  од. на суму  грн.
FD16001200R17HP4KB2BOSA1 FD16001200R17HP4KB2BOSA1 Infineon Technologies Infineon-FD1600_1200R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df348ad6a9e Description: IGBT MOD 1700V 1600A 1050W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
1+122226.58 грн
В кошику  од. на суму  грн.
FD800R17HP4KB2BOSA2 FD800R17HP4KB2BOSA2 Infineon Technologies Infineon-FD800R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e21232c6b16 Description: IGBT MOD 1700V 800A 5200W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 5200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
на замовлення 421 шт:
термін постачання 21-31 дні (днів)
1+82035.37 грн
В кошику  од. на суму  грн.
FZ1800R17HP4B29BOSA2 FZ1800R17HP4B29BOSA2 Infineon Technologies Infineon-FZ1800R17HP4_B29-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e7ca7f76d09 Description: IGBT MOD 1700V 1800A AG-IHMB190
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
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FF600R12KT4HOSA1 FF600R12KT4HOSA1 Infineon Technologies Infineon-FF600R12KT4-DataSheet-v00_20-EN.pdf?fileId=5546d46277fc743901781bd467bb0693 Description: 62MM POWER MODULE 1200 V WITH IG
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+14033.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Infineon Technologies IPP024N06N3_Rev2.2.pdf?fileId=db3a30432313ff5e01239f1f52a67151&folderId=db3a304313b8b5a60113cee8763b02d7 Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
90+246.41 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
CY8C20666AS-24LQXI CY8C20666AS-24LQXI Infineon Technologies Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CAPSENSE 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+497.33 грн
В кошику  од. на суму  грн.
IRAM256-1067A2 Infineon Technologies IRAM256-1067A.pdf Description: IC MOD PWR HYBRID 600V 8A
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
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S25FL512SDPMFI010 S25FL512SDPMFI010 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IPB60R170CFD7ATMA1 IPB60R170CFD7ATMA1 Infineon Technologies Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca Description: MOSFET N-CH 600V 14A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+231.63 грн
10+185.50 грн
100+147.63 грн
500+117.23 грн
Мінімальне замовлення: 2
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BTS700121ESPXUMA2 BTS700121ESPXUMA2 Infineon Technologies Infineon-BTS70012-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd1017598473e2a39a7 Description: PROFET PG-TSDSO-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
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ITS6035SEPKXUMA1 ITS6035SEPKXUMA1 Infineon Technologies Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599 Description: INDUSTRY PROFETS
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
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ITS6035SEPKXUMA1 ITS6035SEPKXUMA1 Infineon Technologies Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599 Description: INDUSTRY PROFETS
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
на замовлення 2748 шт:
термін постачання 21-31 дні (днів)
2+275.92 грн
10+200.59 грн
25+184.28 грн
100+156.08 грн
250+148.04 грн
500+143.20 грн
1000+136.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
2EDL8033G3CXTMA1 2EDL8033G3CXTMA1 Infineon Technologies Infineon-2EDL8033G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf5fc37e81 Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 3A, 6A
DigiKey Programmable: Not Verified
на замовлення 3900 шт:
термін постачання 21-31 дні (днів)
4+92.82 грн
10+64.87 грн
25+58.75 грн
100+48.78 грн
250+45.75 грн
500+43.92 грн
1000+41.72 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2EDL8034G3CXTMA1 2EDL8034G3CXTMA1 Infineon Technologies Infineon-2EDL8034G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888fc1cfcf7ec5 Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 6A
DigiKey Programmable: Not Verified
на замовлення 1881 шт:
термін постачання 21-31 дні (днів)
4+91.97 грн
10+64.54 грн
25+58.42 грн
100+48.49 грн
250+45.48 грн
500+43.66 грн
1000+41.47 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2ED2772S01GXTMA1 2ED2772S01GXTMA1 Infineon Technologies Infineon-2ED2772S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d86610ba456b9 Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
товару немає в наявності
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2ED2772S01GXTMA1 2ED2772S01GXTMA1 Infineon Technologies Infineon-2ED2772S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d86610ba456b9 Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
на замовлення 2397 шт:
термін постачання 21-31 дні (днів)
3+119.22 грн
10+83.89 грн
25+76.20 грн
100+63.55 грн
250+59.76 грн
500+57.47 грн
1000+54.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2ED2778S01GXTMA1 2ED2778S01GXTMA1 Infineon Technologies Infineon-2ED2778S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d866103c956b6 Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Box
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4A, 8A
на замовлення 197 шт:
термін постачання 21-31 дні (днів)
2+178.84 грн
10+128.01 грн
25+116.94 грн
100+98.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF7732S2TR AUIRF7732S2TR Infineon Technologies auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6 Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товару немає в наявності
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AUIRF7732S2TR AUIRF7732S2TR Infineon Technologies auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6 Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 4270 шт:
термін постачання 21-31 дні (днів)
2+218.01 грн
10+136.05 грн
100+93.91 грн
500+71.18 грн
1000+65.72 грн
2000+61.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FL128SDPBHID10 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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IMBG120R017M2HXTMA1 IMBG120R017M2HXTMA1 Infineon Technologies infineon-imbg120r017m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 107A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+724.08 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IMBG120R017M2HXTMA1 IMBG120R017M2HXTMA1 Infineon Technologies infineon-imbg120r017m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 107A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
на замовлення 1369 шт:
термін постачання 21-31 дні (днів)
1+1320.83 грн
10+905.26 грн
100+853.45 грн
В кошику  од. на суму  грн.
CYT2B98CACQ0AZEGS CYT2B98CACQ0AZEGS Infineon Technologies download Description: TVII-B-E-2M-176 REV A2 CFLASH 2M
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
на замовлення 381 шт:
термін постачання 21-31 дні (днів)
1+1371.07 грн
10+1048.94 грн
25+981.22 грн
100+850.96 грн
В кошику  од. на суму  грн.
IPP60R060C7XKSA1 IPP60R060C7XKSA1 Infineon Technologies Infineon-IPP60R060C7-DS-v02_00-EN.pdf?fileId=5546d4625185e0e201518c9680dd3fd1 Description: MOSFET N-CH 600V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
на замовлення 496 шт:
термін постачання 21-31 дні (днів)
1+503.29 грн
50+259.24 грн
100+238.38 грн
В кошику  од. на суму  грн.
FS3L25R12W2H3PB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+6852.82 грн
18+6023.60 грн
В кошику  од. на суму  грн.
CY8C20247S-24LKXI CY8C20247S-24LKXI Infineon Technologies Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
на замовлення 978 шт:
термін постачання 21-31 дні (днів)
4+87.71 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY8C20247S-24LKXI CY8C20247S-24LKXI Infineon Technologies Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
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CY26114ZC CY26114ZC Infineon Technologies CY26114.pdf Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock Generator, Fanout Distribution, Multiplexer
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
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IDK16G120C5XTMA1 IDK16G120C5XTMA1 Infineon Technologies Infineon-IDK16G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0f4bf0f44 Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
товару немає в наявності
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FF900R17ME7WB11BPSA1 FF900R17ME7WB11BPSA1 Infineon Technologies FF900R17ME7W_B11_Rev1.00_11-21-23.pdf Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93800 pF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+35275.78 грн
12+32947.41 грн
В кошику  од. на суму  грн.
IRG4IBC20FDPBF IRG4IBC20FDPBF Infineon Technologies irg4ibc20fdpbf.pdf?fileId=5546d462533600a4015356436f4722ab Description: IGBT 600V 14.3A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 250µJ (on), 640µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 14.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 64 A
Power - Max: 34 W
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
162+135.14 грн
Мінімальне замовлення: 162
В кошику  од. на суму  грн.
FF1800R12IE5BPSA1 FF1800R12IE5BPSA1 Infineon Technologies Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18 Description: IGBT MOD 1200V 1800A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
1+64607.39 грн
В кошику  од. на суму  грн.
F3L15MR12W2M1B69BOMA1 F3L15MR12W2M1B69BOMA1 Infineon Technologies Infineon-F3L15MR12W2M1_B69-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977a9d0495942 Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
3+11549.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
F3L15MR12W2M1B69BOMA1 F3L15MR12W2M1B69BOMA1 Infineon Technologies Infineon-F3L15MR12W2M1_B69-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977a9d0495942 Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
товару немає в наявності
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FD300R12KS4HOSA1 FD300R12KS4HOSA1 Infineon Technologies Infineon-FD300R12KS4-DS-v02_02-en_de.pdf?fileId=db3a30431b3e89eb011bda539bde7d32 Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
на замовлення 556 шт:
термін постачання 21-31 дні (днів)
3+10082.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FF300R12ME3BOSA1 FF300R12ME3BOSA1 Infineon Technologies Infineon-FF300R12ME3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b43468ee6029 Description: IGBT MOD 1200V 500A 1450W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)
2+13977.29 грн
Мінімальне замовлення: 2
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FF300R12ME3BOSA1 FF300R12ME3BOSA1 Infineon Technologies Infineon-FF300R12ME3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b43468ee6029 Description: IGBT MOD 1200V 500A 1450W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
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TDA16847 TDA16847 Infineon Technologies TDA16846%2C47%28-2%29.pdf Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
на замовлення 775 шт:
термін постачання 21-31 дні (днів)
289+76.49 грн
Мінімальне замовлення: 289
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IDW32G65C5BXKSA2 IDW32G65C5BXKSA2 Infineon Technologies Infineon-IDW32G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e43e016e41272 Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+1060.24 грн
10+899.52 грн
240+753.63 грн
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1EDI05I12AHXUMA1 1EDI05I12AHXUMA1 Infineon Technologies Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
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1EDI05I12AHXUMA1 1EDI05I12AHXUMA1 Infineon Technologies Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
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1EDI30J12CPXUMA1 1EDI30J12CPXUMA1 Infineon Technologies Infineon-1EDI30J12CP-DS-v01_03-EN.pdf?fileId=db3a30433e0d3017013e117ce6090950 Description: DIGITAL ISO 1CH GATE DVR DSO19-4
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Supplier Device Package: PG-DSO-19-4
Rise / Fall Time (Typ): 23ns, 22ns
Number of Channels: 1
Voltage - Output Supply: 4.75V ~ 17.5V
на замовлення 46670 шт:
термін постачання 21-31 дні (днів)
120+200.13 грн
Мінімальне замовлення: 120
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1EDI3051EVALBOARDTOBO2 1EDI3051EVALBOARDTOBO2 Infineon Technologies Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+10836.60 грн
В кошику  од. на суму  грн.
1EDI303XASEVALBOARDTOBO1 1EDI303XASEVALBOARDTOBO1 Infineon Technologies Infineon-Z8F80037256-1EDI302xAS_1EDI303xAS-evaluation-board-UserManual-v01_00-EN.pdf?fileId=5546d462773f932401774914b0c60e9e Description: 1EDI303XAS EVALBOARD
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI303xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+11353.52 грн
В кошику  од. на суму  грн.
1EDI3050EVALBOARDTOBO1 1EDI3050EVALBOARDTOBO1 Infineon Technologies Infineon-1EDI3050-AS-1EDI3051-AS-UG-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bf26e98685bf2 Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Secondary Attributes: On-Board LEDs, Test Points
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+11392.69 грн
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1EDI3050ASXUMA1 1EDI3050ASXUMA1 Infineon Technologies 1EDI3020ASXUMA1.pdf Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+245.32 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
1EDI3050ASXUMA1 1EDI3050ASXUMA1 Infineon Technologies 1EDI3020ASXUMA1.pdf Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
на замовлення 1055 шт:
термін постачання 21-31 дні (днів)
1+424.10 грн
10+312.52 грн
25+288.69 грн
100+246.32 грн
250+234.58 грн
500+227.51 грн
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1EDI3051ASXUMA1 1EDI3051ASXUMA1 Infineon Technologies Infineon-1EDI3051AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae3b79517edf Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
товару немає в наявності
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1EDI3051ASXUMA1 1EDI3051ASXUMA1 Infineon Technologies Infineon-1EDI3051AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae3b79517edf Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
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ITD50N04S4L07ATMA1 ITD50N04S4L07ATMA1 Infineon Technologies Infineon-ITD50N04S4L-07-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01612276ce972aeb Description: MOSFET 2N-CH 40V 50A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Supplier Device Package: PG-TO252-5-311
Grade: Automotive
Qualification: AEC-Q100
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CY8C20336H-24LQXI CY8C20336H%2C446H.pdf
CY8C20336H-24LQXI
Виробник: Infineon Technologies
Description: IC PSOC CAPSENSE 24MHZ 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
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CY8C20336H-24LQXIT CY8C20336H%2C446H.pdf
CY8C20336H-24LQXIT
Виробник: Infineon Technologies
Description: MCU PSOC 8K FLASH 24MHZ 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
113+209.96 грн
Мінімальне замовлення: 113
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CY7C1441KV33-133AXM Infineon-CY7C1441KV33_Military_Temperature_36-Mbit_(1M_X_36)_Flow-Through_SRAM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee24a8f68c1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio
CY7C1441KV33-133AXM
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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AUIRF3305 IRSDS11391-1.pdf?t.download=true&u=5oefqw
AUIRF3305
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 140A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12137 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
89+248.61 грн
Мінімальне замовлення: 89
В кошику  од. на суму  грн.
CY2308SXC-1H Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXC-1H
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 714 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1054.28 грн
10+804.97 грн
48+734.29 грн
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CY2308SXC-4 Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXC-4
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2308SXC-2T Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXC-2T
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2308SXC-3 Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXC-3
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2308SXC-1T Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXC-1T
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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FF1500R17IP5BPSA1 Infineon-FF1500R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f2e7f2c2c0002
FF1500R17IP5BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1500A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 88 nF @ 25 V
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+72812.55 грн
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FD16001200R17HP4KB2BOSA1 Infineon-FD1600_1200R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df348ad6a9e
FD16001200R17HP4KB2BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1600A 1050W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+122226.58 грн
В кошику  од. на суму  грн.
FD800R17HP4KB2BOSA2 Infineon-FD800R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e21232c6b16
FD800R17HP4KB2BOSA2
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 800A 5200W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 5200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
на замовлення 421 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+82035.37 грн
В кошику  од. на суму  грн.
FZ1800R17HP4B29BOSA2 Infineon-FZ1800R17HP4_B29-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e7ca7f76d09
FZ1800R17HP4B29BOSA2
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1800A AG-IHMB190
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
товару немає в наявності
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FF600R12KT4HOSA1 Infineon-FF600R12KT4-DataSheet-v00_20-EN.pdf?fileId=5546d46277fc743901781bd467bb0693
FF600R12KT4HOSA1
Виробник: Infineon Technologies
Description: 62MM POWER MODULE 1200 V WITH IG
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+14033.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP024N06N3GXKSA1 IPP024N06N3_Rev2.2.pdf?fileId=db3a30432313ff5e01239f1f52a67151&folderId=db3a304313b8b5a60113cee8763b02d7
IPP024N06N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
90+246.41 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
CY8C20666AS-24LQXI Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C20666AS-24LQXI
Виробник: Infineon Technologies
Description: IC CAPSENSE 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+497.33 грн
В кошику  од. на суму  грн.
IRAM256-1067A2 IRAM256-1067A.pdf
Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 8A
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
товару немає в наявності
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S25FL512SDPMFI010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SDPMFI010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IPB60R170CFD7ATMA1 Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca
IPB60R170CFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 14A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+231.63 грн
10+185.50 грн
100+147.63 грн
500+117.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS700121ESPXUMA2 Infineon-BTS70012-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd1017598473e2a39a7
BTS700121ESPXUMA2
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-24
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
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ITS6035SEPKXUMA1 Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599
ITS6035SEPKXUMA1
Виробник: Infineon Technologies
Description: INDUSTRY PROFETS
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
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ITS6035SEPKXUMA1 Infineon-ITS6035S-EP-K-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21c51e3b2599
ITS6035SEPKXUMA1
Виробник: Infineon Technologies
Description: INDUSTRY PROFETS
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Serial
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm (Max)
Voltage - Supply (Vcc/Vdd): 5V ~ 36V
Current - Output (Max): 13A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Ground, Overload, Overvoltage, Reverse Polarity, Thermal, Undervoltage
на замовлення 2748 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+275.92 грн
10+200.59 грн
25+184.28 грн
100+156.08 грн
250+148.04 грн
500+143.20 грн
1000+136.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
2EDL8033G3CXTMA1 Infineon-2EDL8033G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf5fc37e81
2EDL8033G3CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 3A, 6A
DigiKey Programmable: Not Verified
на замовлення 3900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.82 грн
10+64.87 грн
25+58.75 грн
100+48.78 грн
250+45.75 грн
500+43.92 грн
1000+41.72 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2EDL8034G3CXTMA1 Infineon-2EDL8034G3C-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888fc1cfcf7ec5
2EDL8034G3CXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10VFDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VSON-10-4
Rise / Fall Time (Typ): 4.6ns, 4.4ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 6A
DigiKey Programmable: Not Verified
на замовлення 1881 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.97 грн
10+64.54 грн
25+58.42 грн
100+48.49 грн
250+45.48 грн
500+43.66 грн
1000+41.47 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
2ED2772S01GXTMA1 Infineon-2ED2772S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d86610ba456b9
2ED2772S01GXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
товару немає в наявності
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2ED2772S01GXTMA1 Infineon-2ED2772S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d86610ba456b9
2ED2772S01GXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
на замовлення 2397 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.22 грн
10+83.89 грн
25+76.20 грн
100+63.55 грн
250+59.76 грн
500+57.47 грн
1000+54.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2ED2778S01GXTMA1 Infineon-2ED2778S01G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d866103c956b6
2ED2778S01GXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE VSON-10
Packaging: Box
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 7V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 140 V
Supplier Device Package: PG-VSON-10-5
Rise / Fall Time (Typ): 24ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4A, 8A
на замовлення 197 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+178.84 грн
10+128.01 грн
25+116.94 грн
100+98.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF7732S2TR auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6
AUIRF7732S2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товару немає в наявності
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AUIRF7732S2TR auirf7732s2.pdf?fileId=5546d462533600a4015355ad9c1b13f6
AUIRF7732S2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 4270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+218.01 грн
10+136.05 грн
100+93.91 грн
500+71.18 грн
1000+65.72 грн
2000+61.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FL128SDPBHID10 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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IMBG120R017M2HXTMA1 infineon-imbg120r017m2h-datasheet-en.pdf
IMBG120R017M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 107A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+724.08 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IMBG120R017M2HXTMA1 infineon-imbg120r017m2h-datasheet-en.pdf
IMBG120R017M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 107A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
на замовлення 1369 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1320.83 грн
10+905.26 грн
100+853.45 грн
В кошику  од. на суму  грн.
CYT2B98CACQ0AZEGS download
CYT2B98CACQ0AZEGS
Виробник: Infineon Technologies
Description: TVII-B-E-2M-176 REV A2 CFLASH 2M
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
на замовлення 381 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1371.07 грн
10+1048.94 грн
25+981.22 грн
100+850.96 грн
В кошику  од. на суму  грн.
IPP60R060C7XKSA1 Infineon-IPP60R060C7-DS-v02_00-EN.pdf?fileId=5546d4625185e0e201518c9680dd3fd1
IPP60R060C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
на замовлення 496 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+503.29 грн
50+259.24 грн
100+238.38 грн
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FS3L25R12W2H3PB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6852.82 грн
18+6023.60 грн
В кошику  од. на суму  грн.
CY8C20247S-24LKXI Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20247S-24LKXI
Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
на замовлення 978 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.71 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY8C20247S-24LKXI Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20247S-24LKXI
Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
товару немає в наявності
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CY26114ZC CY26114.pdf
CY26114ZC
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock Generator, Fanout Distribution, Multiplexer
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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IDK16G120C5XTMA1 Infineon-IDK16G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0f4bf0f44
IDK16G120C5XTMA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
товару немає в наявності
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FF900R17ME7WB11BPSA1 FF900R17ME7W_B11_Rev1.00_11-21-23.pdf
FF900R17ME7WB11BPSA1
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93800 pF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+35275.78 грн
12+32947.41 грн
В кошику  од. на суму  грн.
IRG4IBC20FDPBF irg4ibc20fdpbf.pdf?fileId=5546d462533600a4015356436f4722ab
IRG4IBC20FDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 14.3A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 250µJ (on), 640µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 14.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 64 A
Power - Max: 34 W
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
162+135.14 грн
Мінімальне замовлення: 162
В кошику  од. на суму  грн.
FF1800R12IE5BPSA1 Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18
FF1800R12IE5BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1800A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+64607.39 грн
В кошику  од. на суму  грн.
F3L15MR12W2M1B69BOMA1 Infineon-F3L15MR12W2M1_B69-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977a9d0495942
F3L15MR12W2M1B69BOMA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+11549.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
F3L15MR12W2M1B69BOMA1 Infineon-F3L15MR12W2M1_B69-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977a9d0495942
F3L15MR12W2M1B69BOMA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
товару немає в наявності
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FD300R12KS4HOSA1 Infineon-FD300R12KS4-DS-v02_02-en_de.pdf?fileId=db3a30431b3e89eb011bda539bde7d32
FD300R12KS4HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
на замовлення 556 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+10082.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FF300R12ME3BOSA1 Infineon-FF300R12ME3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b43468ee6029
FF300R12ME3BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 500A 1450W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+13977.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FF300R12ME3BOSA1 Infineon-FF300R12ME3-DS-v02_03-en_de.pdf?fileId=db3a304412b407950112b43468ee6029
FF300R12ME3BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 500A 1450W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
товару немає в наявності
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TDA16847 TDA16846%2C47%28-2%29.pdf
TDA16847
Виробник: Infineon Technologies
Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
на замовлення 775 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
289+76.49 грн
Мінімальне замовлення: 289
В кошику  од. на суму  грн.
IDW32G65C5BXKSA2 Infineon-IDW32G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e43e016e41272
IDW32G65C5BXKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1060.24 грн
10+899.52 грн
240+753.63 грн
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1EDI05I12AHXUMA1 Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b
1EDI05I12AHXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
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1EDI05I12AHXUMA1 Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b
1EDI05I12AHXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
товару немає в наявності
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1EDI30J12CPXUMA1 Infineon-1EDI30J12CP-DS-v01_03-EN.pdf?fileId=db3a30433e0d3017013e117ce6090950
1EDI30J12CPXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO19-4
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Supplier Device Package: PG-DSO-19-4
Rise / Fall Time (Typ): 23ns, 22ns
Number of Channels: 1
Voltage - Output Supply: 4.75V ~ 17.5V
на замовлення 46670 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
120+200.13 грн
Мінімальне замовлення: 120
В кошику  од. на суму  грн.
1EDI3051EVALBOARDTOBO2
1EDI3051EVALBOARDTOBO2
Виробник: Infineon Technologies
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10836.60 грн
В кошику  од. на суму  грн.
1EDI303XASEVALBOARDTOBO1 Infineon-Z8F80037256-1EDI302xAS_1EDI303xAS-evaluation-board-UserManual-v01_00-EN.pdf?fileId=5546d462773f932401774914b0c60e9e
1EDI303XASEVALBOARDTOBO1
Виробник: Infineon Technologies
Description: 1EDI303XAS EVALBOARD
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI303xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11353.52 грн
В кошику  од. на суму  грн.
1EDI3050EVALBOARDTOBO1 Infineon-1EDI3050-AS-1EDI3051-AS-UG-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bf26e98685bf2
1EDI3050EVALBOARDTOBO1
Виробник: Infineon Technologies
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Secondary Attributes: On-Board LEDs, Test Points
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11392.69 грн
В кошику  од. на суму  грн.
1EDI3050ASXUMA1 1EDI3020ASXUMA1.pdf
1EDI3050ASXUMA1
Виробник: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+245.32 грн
Мінімальне замовлення: 1000
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1EDI3050ASXUMA1 1EDI3020ASXUMA1.pdf
1EDI3050ASXUMA1
Виробник: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
на замовлення 1055 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+424.10 грн
10+312.52 грн
25+288.69 грн
100+246.32 грн
250+234.58 грн
500+227.51 грн
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1EDI3051ASXUMA1 Infineon-1EDI3051AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae3b79517edf
1EDI3051ASXUMA1
Виробник: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
1EDI3051ASXUMA1 Infineon-1EDI3051AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae3b79517edf
1EDI3051ASXUMA1
Виробник: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
ITD50N04S4L07ATMA1 Infineon-ITD50N04S4L-07-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01612276ce972aeb
ITD50N04S4L07ATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 50A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Supplier Device Package: PG-TO252-5-311
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
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