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IRG4BC30F-SPBF IRG4BC30F-SPBF Infineon Technologies IRG4BC30F.pdf Description: IGBT 600V 31A 100W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
154+141.44 грн
Мінімальне замовлення: 154
В кошику  од. на суму  грн.
IRL3803SPBF IRL3803SPBF Infineon Technologies irl3803spbf.pdf?fileId=5546d462533600a40153565f89502556 description Description: MOSFET N-CH 30V 140A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
товару немає в наявності
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BA592E6433HTMA1 BA592E6433HTMA1 Infineon Technologies ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed Description: RF DIODE STANDARD 35V SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOD323-3D
Current - Max: 100 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2658+7.98 грн
Мінімальне замовлення: 2658
В кошику  од. на суму  грн.
CYPD727268LQXQXQSA1 CYPD727268LQXQXQSA1 Infineon Technologies Infineon-CYPD7271_EZ-PD_TM_CCG7DC_dual-port_USB-C_power_delivery_and_DC-DC_controller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c83cd3081018410c446fe37e2 Description: CHARGER_ADAPTER
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 19
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
1+383.78 грн
10+282.23 грн
25+260.43 грн
100+221.88 грн
260+210.74 грн
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BC848BL3E6327XTMA1 BC848BL3E6327XTMA1 Infineon Technologies INFNS16507-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
2186+10.15 грн
Мінімальне замовлення: 2186
В кошику  од. на суму  грн.
CY7C1021D-10VXIT CY7C1021D-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+221.35 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
CY7C1021D-10VXIT CY7C1021D-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 44SOJ
Packaging: Cut Tape (CT)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 947 шт:
термін постачання 21-31 дні (днів)
2+305.68 грн
10+261.12 грн
25+249.04 грн
50+225.46 грн
100+217.49 грн
250+207.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRGS15B60KPBF Infineon Technologies IRSDS10534-1.pdf?t.download=true&u=5oefqw Description: IGBT
Packaging: Bulk
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
150+145.06 грн
Мінімальне замовлення: 150
В кошику  од. на суму  грн.
IRF8304MTRPBF IRF8304MTRPBF Infineon Technologies IRSDS19129-1.pdf?t.download=true&u=5oefqw Description: IRF8304 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 2561 шт:
термін постачання 21-31 дні (днів)
242+89.94 грн
Мінімальне замовлення: 242
В кошику  од. на суму  грн.
FF55MR12W1M1HB70BPSA1 FF55MR12W1M1HB70BPSA1 Infineon Technologies Infineon-FF55MR12W1M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018ba8c2f673718b Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 6mA
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+4502.06 грн
24+3261.09 грн
В кошику  од. на суму  грн.
FF11MR12W2M1HB70BPSA1 FF11MR12W2M1HB70BPSA1 Infineon Technologies Infineon-FF11MR12W2M1H_B70-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8c3de074018c4ce71c44528a Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg + Boost Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 223nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 30mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+8317.18 грн
15+6807.98 грн
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F411MR12W2M1HB70BPSA1 F411MR12W2M1HB70BPSA1 Infineon Technologies Infineon-F4-11MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8c3de074018c57f67e9e04d3 Description: LOW POWER EASY
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+15771.06 грн
В кошику  од. на суму  грн.
FF6MR12W2M1HB70BPSA1 FF6MR12W2M1HB70BPSA1 Infineon Technologies Infineon-FF6MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018bed1c23c84ee0 Description: LOW POWER EASY
Packaging: Tray
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+16014.59 грн
В кошику  од. на суму  грн.
FF4MR12W2M1HB70BPSA1 FF4MR12W2M1HB70BPSA1 Infineon Technologies Infineon-FF4MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018b728b82ad7c86 Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
на замовлення 74 шт:
термін постачання 21-31 дні (днів)
1+14300.60 грн
15+12863.72 грн
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F48MR12W2M1HB70BPSA1 F48MR12W2M1HB70BPSA1 Infineon Technologies Infineon-F4-8MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8c3de074018c57db7ce3042b Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 40mA
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+12891.45 грн
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FS33MR12W1M1HB70BPSA1 FS33MR12W1M1HB70BPSA1 Infineon Technologies FS33MR12W1M1H_B70_Rev0.20_8-16-23.pdf Description: EASY STANDARD
Packaging: Tray
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+11389.93 грн
В кошику  од. на суму  грн.
BCP5416H6327XTSA1 BCP5416H6327XTSA1 Infineon Technologies bcp54_bcp55_bcp56.pdf?fileId=db3a304314dca3890115475f01a81a0d Description: TRANS NPN 45V 1A PG-SOT223-4-10
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
на замовлення 55280 шт:
термін постачання 21-31 дні (днів)
1598+13.97 грн
Мінімальне замовлення: 1598
В кошику  од. на суму  грн.
BCP5416H6433XTMA1 BCP5416H6433XTMA1 Infineon Technologies bcp54_bcp55_bcp56.pdf?fileId=db3a304314dca3890115475f01a81a0d Description: TRANS NPN 45V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)
1598+13.97 грн
Мінімальне замовлення: 1598
В кошику  од. на суму  грн.
BCP5416E6433HTMA1 BCP5416E6433HTMA1 Infineon Technologies BCP54-56.pdf Description: TRANS NPN 45V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
947+23.53 грн
Мінімальне замовлення: 947
В кошику  од. на суму  грн.
CY14V101PS-SF108XIT CY14V101PS-SF108XIT Infineon Technologies Infineon-CY14V101PS-SF108XI-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed171d64da5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14V101QS-SF108XIT CY14V101QS-SF108XIT Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14V101PS-SF108XI CY14V101PS-SF108XI Infineon Technologies Infineon-CY14V101PS-SF108XI-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed171d64da5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14V101QS-SF108XQT CY14V101QS-SF108XQT Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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cy8c24894-24lfxi cy8c24894-24lfxi Infineon Technologies CY8C24xxx.pdf Description: IC MCU 8BIT 16KB FLASH 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 49
DigiKey Programmable: Not Verified
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CY3250-24X94QFN CY3250-24X94QFN Infineon Technologies Infineon-QFN_POD_Kits_Release_Notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef26011042d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: KIT ICE POD FOR CY8C24X94
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C24794-24LFXI, CY8C24894-24LFXI
Accessory Type: QFN Emulation Kit
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CY3240-I2USB CY3240-I2USB Infineon Technologies CY3240-USB-12C.pdf Description: KIT EVAL PSOC I2C TO USB
Packaging: Bulk
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: CY8C24894
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, MCU, 8-Bit
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CY3242-IOXLITE CY3242-IOXLITE Infineon Technologies CY3242-IOXlite_Demo_Kit_Gde.pdf Description: KIT EVAL PSOC I2C PORT EXP
Packaging: Box
Function: GPIO Expander
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: CY8C24894, CY8C9520
Supplied Contents: Board(s), Cable(s)
Primary Attributes: 8-Bit 20-Port GPIO Expander
Embedded: Yes, MCU, 8-Bit
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CY3270 CY3270 Infineon Technologies CY3270%20Introduction.pdf description Description: CY8C24894 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: M8C
Utilized IC / Part: CY8C24894
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CY8C4146FNI-S423T CY8C4146FNI-S423T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.11x2.6)
Number of I/O: 31
DigiKey Programmable: Not Verified
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CY8C4146FNI-S423T CY8C4146FNI-S423T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 35WLCSP
Packaging: Cut Tape (CT)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.11x2.6)
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
2+283.01 грн
10+204.92 грн
25+188.20 грн
100+159.30 грн
250+151.05 грн
500+146.08 грн
1000+139.66 грн
Мінімальне замовлення: 2
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CY8C4024FNI-S412T CY8C4024FNI-S412T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 16KB FLASH 25WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 25-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 25-WLCSP (2.02x1.93)
Number of I/O: 21
DigiKey Programmable: Not Verified
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CY8C4124FNI-S403T CY8C4124FNI-S403T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.58x2.1)
Number of I/O: 31
DigiKey Programmable: Not Verified
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CY8C4124FNI-S413T CY8C4124FNI-S413T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.58x2.1)
Number of I/O: 31
DigiKey Programmable: Not Verified
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CY8C6145FNI-S3F41T CY8C6145FNI-S3F41T Infineon Technologies Infineon-PSOC_6_MCU_CY8C61X5-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9cb1172ac Description: IC MCU 32BIT 512KB FLASH 49WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 49-XBGA, WLCSP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 49-WLCSP (2.88x3.1)
Number of I/O: 37
DigiKey Programmable: Not Verified
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PEB 4266 V V1.2 PEB 4266 V V1.2 Infineon Technologies PEBx264, PEBx265, PEB436x, PEB4266.pdf Description: IC TELECOM INTERFACE VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V
Current - Supply: 60mA, 90mA
Supplier Device Package: PG-VQFN-48-4
Number of Circuits: 2
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CY90F543GSPFR-GE1 CY90F543GSPFR-GE1 Infineon Technologies Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
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TDA4862 TDA4862 Infineon Technologies Infineon-TDA4862G-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b427d8ba3cf5 Description: IC PFC CTRLR DCM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 19V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DIP-8
на замовлення 4204 шт:
термін постачання 21-31 дні (днів)
567+38.44 грн
Мінімальне замовлення: 567
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BTS71202EPGXUMA1 BTS71202EPGXUMA1 Infineon Technologies Infineon-BTS7120-2EPG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185cf68774462a8 Description: PROFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 61mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 18V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 936 шт:
термін постачання 21-31 дні (днів)
4+88.18 грн
10+61.78 грн
25+55.93 грн
100+46.42 грн
250+43.53 грн
500+41.78 грн
Мінімальне замовлення: 4
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BC857CWH6433XTMA1 BC857CWH6433XTMA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
8955+2.18 грн
Мінімальне замовлення: 8955
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BSP179H6327XTSA1 BSP179H6327XTSA1 Infineon Technologies BSP179.pdf Description: MOSFET N-CH 400V 210MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 210mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Qualification: AEC-Q101
на замовлення 40640 шт:
термін постачання 21-31 дні (днів)
466+46.42 грн
Мінімальне замовлення: 466
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CY8C5688FNI-LP211T CY8C5688FNI-LP211T Infineon Technologies download Description: IC MCU 32BIT 256KB FLASH 99WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 99-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 99-WLCSP (5.19x5.94)
Number of I/O: 62
DigiKey Programmable: Not Verified
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AUIRF1010ZL AUIRF1010ZL Infineon Technologies INFN-S-A0002296928-1.pdf?t.download=true&u=5oefqw Description: AUIRF1010 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
153+142.16 грн
Мінімальне замовлення: 153
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IPC300N15N3RX1SA2 Infineon Technologies Infineon-IPC300N15N3R-DS-v02_06-EN.pdf?fileId=5546d4624ad04ef9014af2e748c21234 Description: MOSFET N-CH 150V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
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FF4MR12W2M1HPB11BPSA1 FF4MR12W2M1HPB11BPSA1 Infineon Technologies FF4MR12W2M1HP_B11_Rev0.10_8-11-23.pdf Description: MOSFET 2N-CH 1200V AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: AG-EASY2B
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+18014.11 грн
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FF4MR20KM1HHPSA1 FF4MR20KM1HHPSA1 Infineon Technologies Infineon-FF4MR20KM1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a9e2cd3834 Description: MOSFET 2N-CH 2000V AG-62MMHB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Supplier Device Package: AG-62MMHB
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+43928.86 грн
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F411MR12W2M1B76BOMA1 F411MR12W2M1B76BOMA1 Infineon Technologies Description: MOSFET 4N-CH 1200V AG-EASY1B
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+24582.86 грн
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TD180N16KOFHPSA2 TD180N16KOFHPSA2 Infineon Technologies Infineon-TT180N-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7ea04bea Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 285 A
Voltage - Off State: 1.6 kV
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+11837.53 грн
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IPLU250N04S41R7XTMA1 IPLU250N04S41R7XTMA1 Infineon Technologies Infineon-IPLU250N04S4-1R7-DS-v01_00-EN.pdf?fileId=5546d4624a0bf290014a4df712153452 Description: MOSFET N-CH 40V 250A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Qualification: AEC-Q101
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IPLU250N04S41R7XTMA1 IPLU250N04S41R7XTMA1 Infineon Technologies Infineon-IPLU250N04S4-1R7-DS-v01_00-EN.pdf?fileId=5546d4624a0bf290014a4df712153452 Description: MOSFET N-CH 40V 250A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Qualification: AEC-Q101
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CY15B004J-SXAT CY15B004J-SXAT Infineon Technologies Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.65V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: I2C
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY15B004J-SXET CY15B004J-SXET Infineon Technologies Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 4KBIT I2C 3.4MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: I2C
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY15B004Q-SXA CY15B004Q-SXA Infineon Technologies download Description: IC FRAM 4KBIT SPI 16MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 16 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY15B004Q-SXAT CY15B004Q-SXAT Infineon Technologies download Description: IC FRAM 4KBIT SPI 16MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 16 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BAV199E6359HTMA1 BAV199E6359HTMA1 Infineon Technologies bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5 Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
на замовлення 800000 шт:
термін постачання 21-31 дні (днів)
150+145.06 грн
Мінімальне замовлення: 150
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AUIRLL024NTR AUIRLL024NTR Infineon Technologies AUIRLL024N.pdf Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6003 шт:
термін постачання 21-31 дні (днів)
330+66.00 грн
Мінімальне замовлення: 330
В кошику  од. на суму  грн.
BCX5310E6327HTSA1 BCX5310E6327HTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
2358+9.43 грн
Мінімальне замовлення: 2358
В кошику  од. на суму  грн.
CY14V101LA-BA45XIT CY14V101LA-BA45XIT Infineon Technologies download Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14V101LA-BA45XIT CY14V101LA-BA45XIT Infineon Technologies download Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
1+1713.99 грн
10+1464.67 грн
25+1396.58 грн
50+1264.26 грн
100+1219.46 грн
250+1162.57 грн
500+1102.87 грн
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CY9AFA44LBPMC1-G-JNE2 CY9AFA44LBPMC1-G-JNE2 Infineon Technologies Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
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IFF750B12ME7B11BPSA1 IFF750B12ME7B11BPSA1 Infineon Technologies Infineon-IFF750B12ME7_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d018a21fb484d2603 Description: IGBT MODULE 1200V 750A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 51 µA
Input Capacitance (Cies) @ Vce: 115000 pF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+13583.43 грн
В кошику  од. на суму  грн.
IRG4BC30F-SPBF IRG4BC30F.pdf
IRG4BC30F-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 31A 100W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
154+141.44 грн
Мінімальне замовлення: 154
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IRL3803SPBF description irl3803spbf.pdf?fileId=5546d462533600a40153565f89502556
IRL3803SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
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BA592E6433HTMA1 ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed
BA592E6433HTMA1
Виробник: Infineon Technologies
Description: RF DIODE STANDARD 35V SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOD323-3D
Current - Max: 100 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2658+7.98 грн
Мінімальне замовлення: 2658
В кошику  од. на суму  грн.
CYPD727268LQXQXQSA1 Infineon-CYPD7271_EZ-PD_TM_CCG7DC_dual-port_USB-C_power_delivery_and_DC-DC_controller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c83cd3081018410c446fe37e2
CYPD727268LQXQXQSA1
Виробник: Infineon Technologies
Description: CHARGER_ADAPTER
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 19
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+383.78 грн
10+282.23 грн
25+260.43 грн
100+221.88 грн
260+210.74 грн
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BC848BL3E6327XTMA1 INFNS16507-1.pdf?t.download=true&u=5oefqw
BC848BL3E6327XTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2186+10.15 грн
Мінімальне замовлення: 2186
В кошику  од. на суму  грн.
CY7C1021D-10VXIT download
CY7C1021D-10VXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+221.35 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
CY7C1021D-10VXIT download
CY7C1021D-10VXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44SOJ
Packaging: Cut Tape (CT)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 947 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+305.68 грн
10+261.12 грн
25+249.04 грн
50+225.46 грн
100+217.49 грн
250+207.38 грн
Мінімальне замовлення: 2
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IRGS15B60KPBF IRSDS10534-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT
Packaging: Bulk
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
150+145.06 грн
Мінімальне замовлення: 150
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IRF8304MTRPBF IRSDS19129-1.pdf?t.download=true&u=5oefqw
IRF8304MTRPBF
Виробник: Infineon Technologies
Description: IRF8304 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 2561 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
242+89.94 грн
Мінімальне замовлення: 242
В кошику  од. на суму  грн.
FF55MR12W1M1HB70BPSA1 Infineon-FF55MR12W1M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018ba8c2f673718b
FF55MR12W1M1HB70BPSA1
Виробник: Infineon Technologies
Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 6mA
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4502.06 грн
24+3261.09 грн
В кошику  од. на суму  грн.
FF11MR12W2M1HB70BPSA1 Infineon-FF11MR12W2M1H_B70-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8c3de074018c4ce71c44528a
FF11MR12W2M1HB70BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg + Boost Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 223nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 30mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8317.18 грн
15+6807.98 грн
В кошику  од. на суму  грн.
F411MR12W2M1HB70BPSA1 Infineon-F4-11MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8c3de074018c57f67e9e04d3
F411MR12W2M1HB70BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15771.06 грн
В кошику  од. на суму  грн.
FF6MR12W2M1HB70BPSA1 Infineon-FF6MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018bed1c23c84ee0
FF6MR12W2M1HB70BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+16014.59 грн
В кошику  од. на суму  грн.
FF4MR12W2M1HB70BPSA1 Infineon-FF4MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018b728b82ad7c86
FF4MR12W2M1HB70BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
на замовлення 74 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14300.60 грн
15+12863.72 грн
В кошику  од. на суму  грн.
F48MR12W2M1HB70BPSA1 Infineon-F4-8MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8c3de074018c57db7ce3042b
F48MR12W2M1HB70BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 40mA
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12891.45 грн
В кошику  од. на суму  грн.
FS33MR12W1M1HB70BPSA1 FS33MR12W1M1H_B70_Rev0.20_8-16-23.pdf
FS33MR12W1M1HB70BPSA1
Виробник: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11389.93 грн
В кошику  од. на суму  грн.
BCP5416H6327XTSA1 bcp54_bcp55_bcp56.pdf?fileId=db3a304314dca3890115475f01a81a0d
BCP5416H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 1A PG-SOT223-4-10
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
на замовлення 55280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1598+13.97 грн
Мінімальне замовлення: 1598
В кошику  од. на суму  грн.
BCP5416H6433XTMA1 bcp54_bcp55_bcp56.pdf?fileId=db3a304314dca3890115475f01a81a0d
BCP5416H6433XTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1598+13.97 грн
Мінімальне замовлення: 1598
В кошику  од. на суму  грн.
BCP5416E6433HTMA1 BCP54-56.pdf
BCP5416E6433HTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
947+23.53 грн
Мінімальне замовлення: 947
В кошику  од. на суму  грн.
CY14V101PS-SF108XIT Infineon-CY14V101PS-SF108XI-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed171d64da5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101PS-SF108XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14V101QS-SF108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-SF108XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14V101PS-SF108XI Infineon-CY14V101PS-SF108XI-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed171d64da5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101PS-SF108XI
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14V101QS-SF108XQT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-SF108XQT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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cy8c24894-24lfxi CY8C24xxx.pdf
cy8c24894-24lfxi
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 49
DigiKey Programmable: Not Verified
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CY3250-24X94QFN Infineon-QFN_POD_Kits_Release_Notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef26011042d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY3250-24X94QFN
Виробник: Infineon Technologies
Description: KIT ICE POD FOR CY8C24X94
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C24794-24LFXI, CY8C24894-24LFXI
Accessory Type: QFN Emulation Kit
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CY3240-I2USB CY3240-USB-12C.pdf
CY3240-I2USB
Виробник: Infineon Technologies
Description: KIT EVAL PSOC I2C TO USB
Packaging: Bulk
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: CY8C24894
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, MCU, 8-Bit
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CY3242-IOXLITE CY3242-IOXlite_Demo_Kit_Gde.pdf
CY3242-IOXLITE
Виробник: Infineon Technologies
Description: KIT EVAL PSOC I2C PORT EXP
Packaging: Box
Function: GPIO Expander
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: CY8C24894, CY8C9520
Supplied Contents: Board(s), Cable(s)
Primary Attributes: 8-Bit 20-Port GPIO Expander
Embedded: Yes, MCU, 8-Bit
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CY3270 description CY3270%20Introduction.pdf
CY3270
Виробник: Infineon Technologies
Description: CY8C24894 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: M8C
Utilized IC / Part: CY8C24894
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CY8C4146FNI-S423T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4146FNI-S423T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.11x2.6)
Number of I/O: 31
DigiKey Programmable: Not Verified
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CY8C4146FNI-S423T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4146FNI-S423T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 35WLCSP
Packaging: Cut Tape (CT)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.11x2.6)
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+283.01 грн
10+204.92 грн
25+188.20 грн
100+159.30 грн
250+151.05 грн
500+146.08 грн
1000+139.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4024FNI-S412T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4024FNI-S412T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 25WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 25-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 25-WLCSP (2.02x1.93)
Number of I/O: 21
DigiKey Programmable: Not Verified
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CY8C4124FNI-S403T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4124FNI-S403T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.58x2.1)
Number of I/O: 31
DigiKey Programmable: Not Verified
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CY8C4124FNI-S413T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4124FNI-S413T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.58x2.1)
Number of I/O: 31
DigiKey Programmable: Not Verified
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CY8C6145FNI-S3F41T Infineon-PSOC_6_MCU_CY8C61X5-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9cb1172ac
CY8C6145FNI-S3F41T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 49WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 49-XBGA, WLCSP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 49-WLCSP (2.88x3.1)
Number of I/O: 37
DigiKey Programmable: Not Verified
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PEB 4266 V V1.2 PEBx264, PEBx265, PEB436x, PEB4266.pdf
PEB 4266 V V1.2
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V
Current - Supply: 60mA, 90mA
Supplier Device Package: PG-VQFN-48-4
Number of Circuits: 2
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CY90F543GSPFR-GE1 Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY90F543GSPFR-GE1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
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TDA4862 Infineon-TDA4862G-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b427d8ba3cf5
TDA4862
Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 19V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DIP-8
на замовлення 4204 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
567+38.44 грн
Мінімальне замовлення: 567
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BTS71202EPGXUMA1 Infineon-BTS7120-2EPG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185cf68774462a8
BTS71202EPGXUMA1
Виробник: Infineon Technologies
Description: PROFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 61mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 18V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 936 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+88.18 грн
10+61.78 грн
25+55.93 грн
100+46.42 грн
250+43.53 грн
500+41.78 грн
Мінімальне замовлення: 4
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BC857CWH6433XTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC857CWH6433XTMA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8955+2.18 грн
Мінімальне замовлення: 8955
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BSP179H6327XTSA1 BSP179.pdf
BSP179H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 400V 210MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 210mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Qualification: AEC-Q101
на замовлення 40640 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
466+46.42 грн
Мінімальне замовлення: 466
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CY8C5688FNI-LP211T download
CY8C5688FNI-LP211T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 99WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 99-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 99-WLCSP (5.19x5.94)
Number of I/O: 62
DigiKey Programmable: Not Verified
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AUIRF1010ZL INFN-S-A0002296928-1.pdf?t.download=true&u=5oefqw
AUIRF1010ZL
Виробник: Infineon Technologies
Description: AUIRF1010 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
153+142.16 грн
Мінімальне замовлення: 153
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IPC300N15N3RX1SA2 Infineon-IPC300N15N3R-DS-v02_06-EN.pdf?fileId=5546d4624ad04ef9014af2e748c21234
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
товару немає в наявності
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FF4MR12W2M1HPB11BPSA1 FF4MR12W2M1HP_B11_Rev0.10_8-11-23.pdf
FF4MR12W2M1HPB11BPSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: AG-EASY2B
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18014.11 грн
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FF4MR20KM1HHPSA1 Infineon-FF4MR20KM1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a9e2cd3834
FF4MR20KM1HHPSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 2000V AG-62MMHB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Supplier Device Package: AG-62MMHB
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+43928.86 грн
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F411MR12W2M1B76BOMA1
F411MR12W2M1B76BOMA1
Виробник: Infineon Technologies
Description: MOSFET 4N-CH 1200V AG-EASY1B
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+24582.86 грн
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TD180N16KOFHPSA2 Infineon-TT180N-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7ea04bea
TD180N16KOFHPSA2
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 285 A
Voltage - Off State: 1.6 kV
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11837.53 грн
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IPLU250N04S41R7XTMA1 Infineon-IPLU250N04S4-1R7-DS-v01_00-EN.pdf?fileId=5546d4624a0bf290014a4df712153452
IPLU250N04S41R7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 250A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Qualification: AEC-Q101
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IPLU250N04S41R7XTMA1 Infineon-IPLU250N04S4-1R7-DS-v01_00-EN.pdf?fileId=5546d4624a0bf290014a4df712153452
IPLU250N04S41R7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 250A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Qualification: AEC-Q101
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CY15B004J-SXAT Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B004J-SXAT
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.65V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: I2C
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY15B004J-SXET Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B004J-SXET
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT I2C 3.4MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: I2C
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY15B004Q-SXA download
CY15B004Q-SXA
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 16MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 16 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY15B004Q-SXAT download
CY15B004Q-SXAT
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 16MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 16 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BAV199E6359HTMA1 bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5
BAV199E6359HTMA1
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
на замовлення 800000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
150+145.06 грн
Мінімальне замовлення: 150
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AUIRLL024NTR AUIRLL024N.pdf
AUIRLL024NTR
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6003 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
330+66.00 грн
Мінімальне замовлення: 330
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BCX5310E6327HTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX5310E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 80V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2358+9.43 грн
Мінімальне замовлення: 2358
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CY14V101LA-BA45XIT download
CY14V101LA-BA45XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14V101LA-BA45XIT download
CY14V101LA-BA45XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1713.99 грн
10+1464.67 грн
25+1396.58 грн
50+1264.26 грн
100+1219.46 грн
250+1162.57 грн
500+1102.87 грн
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CY9AFA44LBPMC1-G-JNE2 Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AFA44LBPMC1-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IFF750B12ME7B11BPSA1 Infineon-IFF750B12ME7_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d018a21fb484d2603
IFF750B12ME7B11BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 750A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 750A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 51 µA
Input Capacitance (Cies) @ Vce: 115000 pF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13583.43 грн
В кошику  од. на суму  грн.
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