| Фото | Назва | Виробник | Інформація |
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IS25WP016D-JBLE | ISSI |
 Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Mounting: SMD Operating temperature: -40...105°C Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 16Mb FLASH Case: SO8 |
на замовлення 467 шт: термін постачання 21-30 дні (днів) |
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IS25WP016D-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Mounting: SMD Operating temperature: -40...105°C Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 16Mb FLASH Case: SO8 |
на замовлення 335 шт: термін постачання 21-30 дні (днів) |
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| IS64C6416AL-15TLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 15ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 1Mb SRAM Operating voltage: 5V Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 15ns |
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| IS64C6416AL-15TLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 15ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Case: TSOP44 II Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of interface: parallel Memory: 1Mb SRAM Operating voltage: 5V Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 15ns |
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| IS61NLP102418B-250B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Access time: 2.6ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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| IS61VPS102418B-250TQL | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; in-tray,tube Type of integrated circuit: SRAM memory Kind of package: in-tray; tube |
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IS25LP512M-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: in-tray; tube Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
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IS25LP512M-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: reel; tape Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
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| IS25LP512M-RHLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: TFBGA24 Mounting: SMD Operating temperature: -40...125°C Kind of interface: serial Kind of package: in-tray; tube Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
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| IS25LP512M-RHLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: TFBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: in-tray; tube Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
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| IS25LP512M-RHLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: TFBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: reel; tape Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
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| IS25LP512M-RMLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: SO16 Mounting: SMD Operating temperature: -40...125°C Kind of interface: serial Kind of package: in-tray; tube Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
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| IS25LP512M-RMLA3-TY | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: SO16 Mounting: SMD Operating temperature: -40...125°C Kind of interface: serial Kind of package: in-tray; tube Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
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| IS61LF12836A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Access time: 7.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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| IS61LF12836EC-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Access time: 6.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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IS25WP040E-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 4MbFLASH; QPI,SPI; 104MHz; 1.65÷1.95V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 4Mb FLASH Interface: QPI; SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 1.65...1.95V |
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| IS66WVH8M8BLL-100B1LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3V Kind of package: in-tray; tube Access time: 40ns |
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| IS66WVH8M8BLL-100B1LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3V Kind of package: reel; tape Access time: 40ns |
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| IS61WV10248BLL-10MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV10248BLL-10MLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS63WV1288DBLL-10JLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.4÷3.6V; 10ns; SOJ32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Case: SOJ32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.4...3.6V Kind of package: in-tray; tube Access time: 10ns |
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| IS25WE01G-RILE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.7÷1.95V; serial Mounting: SMD Case: LFBGA24 Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 1.7...1.95V Kind of memory: NOR Flash Interface: DTR; QPI; SPI Operating frequency: 104MHz Type of integrated circuit: FLASH memory Kind of interface: serial Memory: 1Gb FLASH |
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| IS61LPS12836EC-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165 Mounting: SMD Operating temperature: -40...85°C Case: TFBGA165 Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns |
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| IS61LPS12836EC-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Operating temperature: -40...85°C Case: QFP100 Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns |
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| IS25LX064-JHLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24 Type of integrated circuit: FLASH memory Kind of memory: Flash Memory: 64Mb FLASH Interface: xSPI Operating frequency: 133MHz Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.7...3.6V |
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| IS25LX064-JHLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24 Type of integrated circuit: FLASH memory Kind of memory: Flash Memory: 64Mb FLASH Interface: xSPI Operating frequency: 133MHz Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating voltage: 2.7...3.6V |
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| IS25LX256-JHLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24 Type of integrated circuit: FLASH memory Kind of memory: Flash Memory: 256Mb FLASH Interface: xSPI Operating frequency: 133MHz Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.7...3.6V |
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| IS25LX512M-JHLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24 Type of integrated circuit: FLASH memory Kind of memory: Flash Memory: 512Mb FLASH Interface: xSPI Operating frequency: 133MHz Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 2.7...3.6V |
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| IS25LX512M-JHLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24 Type of integrated circuit: FLASH memory Kind of memory: Flash Memory: 512Mb FLASH Interface: xSPI Operating frequency: 133MHz Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 2.7...3.6V |
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| IS61QDB22M36A-333B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.8V |
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IS61WV5128BLL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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| IS61WV5128EDBLL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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| IS61WV5128EDBLL-10KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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| IS61LPD51236A-250B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165 Operating temperature: -40...85°C Access time: 2.6ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Mounting: SMD Case: PBGA165 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx36bit |
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| IS61LPS12836A-250TQL | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C Mounting: SMD Operating temperature: 0...70°C Case: QFP100 Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 2.6ns |
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IS61WV6416BLL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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| IS61WV6416BLL-12TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
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| IS61WV6416BLL-12BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 12ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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| IS61WV6416DBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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| IS61WV6416DBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV6416DBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS61WV6416EEBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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| IS61WV6416EEBLL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
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| IS61WV6416EEBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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| IS61WV6416EEBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS64WV6416EEBLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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IS61LV12824-10TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 10ns; TQFP100; parallel Case: TQFP100 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Kind of interface: parallel Memory: 3Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx24bit Access time: 10ns |
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| IS61LV6416-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V Kind of interface: parallel Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 64kx16bit Access time: 10ns |
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| IS64LF12836EC-7.5B3LA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Access time: 7.5ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 3.3V |
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| IS61LPS12836A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Operating temperature: -40...85°C Case: QFP100 Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 3.1ns |
товар відсутній |
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| IS61WV25632BLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 256kx32bit Access time: 10ns Case: TFBGA90 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
товар відсутній |
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| IS61WV25632BLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 256kx32bit Access time: 10ns Case: TFBGA90 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
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| IS25WX064-JHLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial Type of integrated circuit: FLASH memory Kind of memory: Flash Memory: 64Mb FLASH Interface: xSPI Operating frequency: 200MHz Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 1.7...2V |
товар відсутній |
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| IS25WX064-JHLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial Type of integrated circuit: FLASH memory Kind of memory: Flash Memory: 64Mb FLASH Interface: xSPI Operating frequency: 200MHz Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating voltage: 1.7...2V |
товар відсутній |
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| IS25WX256-JHLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial Type of integrated circuit: FLASH memory Kind of memory: Flash Memory: 256Mb FLASH Interface: xSPI Operating frequency: 200MHz Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating voltage: 1.7...2V |
товар відсутній |
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IS25LQ512B-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512kb FLASH Interface: SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.3...3.6V |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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IS25LQ512B-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512kb FLASH Interface: SPI Operating frequency: 104MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 2.3...3.6V |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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IS25LQ512B-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512kb FLASH Interface: SPI Operating frequency: 104MHz Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.3...3.6V |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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| IS25LP512M-RMLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: SO16 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: reel; tape Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
товар відсутній |
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| IS25LP512M-RMLE-TY | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Case: SO16 Mounting: SMD Operating temperature: -40...105°C Kind of interface: serial Kind of package: in-tray; tube Operating frequency: 133MHz Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V |
товар відсутній |
| IS25WP016D-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Mounting: SMD
Operating temperature: -40...105°C
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Case: SO8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Mounting: SMD
Operating temperature: -40...105°C
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Case: SO8
на замовлення 467 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.36 грн |
| 10+ | 84.15 грн |
| 13+ | 66.76 грн |
| 34+ | 63.28 грн |
| IS25WP016D-JNLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Mounting: SMD
Operating temperature: -40...105°C
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Case: SO8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Mounting: SMD
Operating temperature: -40...105°C
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Case: SO8
на замовлення 335 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.36 грн |
| 10+ | 83.45 грн |
| 13+ | 66.76 грн |
| 34+ | 63.28 грн |
| IS64C6416AL-15TLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 15ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 15ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 15ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 1Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 15ns
товар відсутній
| IS64C6416AL-15TLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 15ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 1Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 15ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 15ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: parallel
Memory: 1Mb SRAM
Operating voltage: 5V
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 15ns
товар відсутній
| IS61NLP102418B-250B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61VPS102418B-250TQL |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; in-tray,tube
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; in-tray,tube
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
товар відсутній
| IS25LP512M-JLLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP512M-JLLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP512M-RHLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP512M-RHLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP512M-RHLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP512M-RMLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP512M-RMLA3-TY |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній
| IS61LF12836A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61LF12836EC-6.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 6.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 6.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS25WP040E-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 4MbFLASH; QPI,SPI; 104MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 4Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 4MbFLASH; QPI,SPI; 104MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 4Mb FLASH
Interface: QPI; SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 1.65...1.95V
товар відсутній
| IS66WVH8M8BLL-100B1LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3V
Kind of package: in-tray; tube
Access time: 40ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3V
Kind of package: in-tray; tube
Access time: 40ns
товар відсутній
| IS66WVH8M8BLL-100B1LI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3V
Kind of package: reel; tape
Access time: 40ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3V
Kind of package: reel; tape
Access time: 40ns
товар відсутній
| IS61WV10248BLL-10MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV10248BLL-10MLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS63WV1288DBLL-10JLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.4÷3.6V; 10ns; SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: SOJ32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: in-tray; tube
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.4÷3.6V; 10ns; SOJ32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Case: SOJ32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.4...3.6V
Kind of package: in-tray; tube
Access time: 10ns
товар відсутній
| IS25WE01G-RILE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.7÷1.95V; serial
Mounting: SMD
Case: LFBGA24
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 1.7...1.95V
Kind of memory: NOR Flash
Interface: DTR; QPI; SPI
Operating frequency: 104MHz
Type of integrated circuit: FLASH memory
Kind of interface: serial
Memory: 1Gb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.7÷1.95V; serial
Mounting: SMD
Case: LFBGA24
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 1.7...1.95V
Kind of memory: NOR Flash
Interface: DTR; QPI; SPI
Operating frequency: 104MHz
Type of integrated circuit: FLASH memory
Kind of interface: serial
Memory: 1Gb FLASH
товар відсутній
| IS61LPS12836EC-200B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA165
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA165
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
товар відсутній
| IS61LPS12836EC-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
товар відсутній
| IS25LX064-JHLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 64Mb FLASH
Interface: xSPI
Operating frequency: 133MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 64Mb FLASH
Interface: xSPI
Operating frequency: 133MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
| IS25LX064-JHLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 64Mb FLASH
Interface: xSPI
Operating frequency: 133MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 64Mb FLASH
Interface: xSPI
Operating frequency: 133MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
| IS25LX256-JHLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 256Mb FLASH
Interface: xSPI
Operating frequency: 133MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 256Mb FLASH
Interface: xSPI
Operating frequency: 133MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
| IS25LX512M-JHLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 512Mb FLASH
Interface: xSPI
Operating frequency: 133MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 512Mb FLASH
Interface: xSPI
Operating frequency: 133MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 2.7...3.6V
товар відсутній
| IS25LX512M-JHLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 512Mb FLASH
Interface: xSPI
Operating frequency: 133MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; xSPI; 133MHz; 2.7÷3.6V; TFBGA24
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 512Mb FLASH
Interface: xSPI
Operating frequency: 133MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 2.7...3.6V
товар відсутній
| IS61QDB22M36A-333B4LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 1.8V
товар відсутній
| IS61WV5128BLL-10KLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 378.21 грн |
| 3+ | 305.99 грн |
| 8+ | 289.3 грн |
| 25+ | 276.78 грн |
| IS61WV5128EDBLL-10KLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV5128EDBLL-10KLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61LPD51236A-250B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165
Operating temperature: -40...85°C
Access time: 2.6ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Case: PBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165
Operating temperature: -40...85°C
Access time: 2.6ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Case: PBGA165
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx36bit
товар відсутній
| IS61LPS12836A-250TQL |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Case: QFP100
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 2.6ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Case: QFP100
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 2.6ns
товар відсутній
| IS61WV6416BLL-12TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.28 грн |
| 5+ | 134.91 грн |
| 7+ | 127.53 грн |
| 18+ | 120.58 грн |
| IS61WV6416BLL-12TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
товар відсутній
| IS61WV6416BLL-12BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 12ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61WV6416DBLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV6416DBLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV6416DBLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV6416EEBLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV6416EEBLL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV6416EEBLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV6416EEBLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS64WV6416EEBLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61LV12824-10TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 10ns; TQFP100; parallel
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 3Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx24bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 3MbSRAM; 128kx24bit; 3.3V; 10ns; TQFP100; parallel
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 3Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx24bit
Access time: 10ns
товар відсутній
| IS61LV6416-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Kind of interface: parallel
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 64kx16bit
Access time: 10ns
товар відсутній
| IS64LF12836EC-7.5B3LA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating voltage: 3.3V
товар відсутній
| IS61LPS12836A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Case: QFP100
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
товар відсутній
| IS61WV25632BLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 256kx32bit
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 256kx32bit
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Operating voltage: 2.4...3.6V
товар відсутній
| IS61WV25632BLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 256kx32bit
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 256kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 256kx32bit
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 2.4...3.6V
товар відсутній
| IS25WX064-JHLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 64Mb FLASH
Interface: xSPI
Operating frequency: 200MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 64Mb FLASH
Interface: xSPI
Operating frequency: 200MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 1.7...2V
товар відсутній
| IS25WX064-JHLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 64Mb FLASH
Interface: xSPI
Operating frequency: 200MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 64Mb FLASH
Interface: xSPI
Operating frequency: 200MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating voltage: 1.7...2V
товар відсутній
| IS25WX256-JHLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 256Mb FLASH
Interface: xSPI
Operating frequency: 200MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 1.7...2V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: Flash
Memory: 256Mb FLASH
Interface: xSPI
Operating frequency: 200MHz
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating voltage: 1.7...2V
товар відсутній
| IS25LQ512B-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 47.93 грн |
| 9+ | 43.12 грн |
| IS25LQ512B-JKLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 54.24 грн |
| IS25LQ512B-JNLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.54 грн |
| IS25LP512M-RMLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: reel; tape
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній
| IS25LP512M-RMLE-TY |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Kind of interface: serial
Kind of package: in-tray; tube
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
товар відсутній