| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS61QDB21M18A-250B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61QDB24M18A-250B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS62C1024AL-35TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel Mounting: SMD Operating voltage: 5V Operating temperature: -40...85°C Kind of interface: parallel Case: TSOP32 Kind of memory: SRAM Type of integrated circuit: SRAM memory Access time: 35ns Memory: 1Mb SRAM Memory organisation: 128kx8bit |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IS61C1024AL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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| IS61C1024AL-12HLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS66WVE4M16EALL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS66WVE4M16EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS66WVE4M16ECLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS66WVE4M16TBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS66WVE4M16EALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS66WVE4M16EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS66WVE4M16ECLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS66WVE4M16TBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS61C25616AL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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IS61C25616AL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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IS61WV5128BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 122 шт: термін постачання 21-30 дні (днів) |
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IS61WV5128BLL-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.4...3.6V Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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IS61WV6416DBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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IS61WV12816DBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| IS62C25616EL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS62C25616EL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS25WX128-JHLA3 | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial Kind of memory: NOR Kind of interface: serial Mounting: SMD Case: TFBGA24 Interface: xSPI Operating temperature: -40...125°C Operating voltage: 1.7...2V Memory: 128Mb FLASH Operating frequency: 200MHz Type of integrated circuit: FLASH memory Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS62C256AL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 45ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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| IS62C25616BL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS62C25616BL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS62C256AL-25ULI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 25ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS62C256AL-25ULI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 25ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS62C256AL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 45ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS62C256AL-45ULI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32x8bit Operating voltage: 5V Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS25LP128F-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8 Mounting: SMD Operating temperature: -40...105°C Case: SO8 Kind of package: in-tray; tube Kind of memory: NOR Kind of interface: serial Operating voltage: 2.3...3.6V Operating frequency: 166MHz Memory: 128Mb FLASH Interface: DTR; QPI; SPI Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS25LP128F-JBLA3 | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8 Mounting: SMD Operating temperature: -40...125°C Case: SO8 Kind of package: in-tray; tube Kind of memory: NOR Kind of interface: serial Operating voltage: 2.3...3.6V Operating frequency: 166MHz Memory: 128Mb FLASH Interface: DTR; QPI; SPI Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS25LP128-JBLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Mounting: SMD Operating temperature: -40...105°C Case: SO8 Kind of package: reel; tape Kind of memory: NOR Kind of interface: serial Operating voltage: 2.3...3.6V Operating frequency: 133MHz Memory: 128Mb FLASH Interface: DTR; QPI; SPI Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS25LP128-JKLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 133MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS25LP128-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 133MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IS25LP128-JMLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16 Mounting: SMD Operating temperature: -40...105°C Case: SO16 Kind of package: reel; tape Kind of memory: NOR Kind of interface: serial Operating voltage: 2.3...3.6V Operating frequency: 133MHz Memory: 128Mb FLASH Interface: DTR; QPI; SPI Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS25LP128F-JBLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8 Mounting: SMD Operating temperature: -40...125°C Case: SO8 Kind of package: reel; tape Kind of memory: NOR Kind of interface: serial Operating voltage: 2.3...3.6V Operating frequency: 166MHz Memory: 128Mb FLASH Interface: DTR; QPI; SPI Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IS62C5128BL-45TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel Memory: 4Mb SRAM Kind of memory: SRAM Operating temperature: -40...85°C Access time: 45ns Operating voltage: 5V Memory organisation: 512kx8bit Kind of interface: parallel Mounting: SMD Case: TSOP32 II Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS62C51216AL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II Memory: 8Mb SRAM Kind of memory: SRAM Operating temperature: -40...85°C Access time: 55ns Operating voltage: 4.5...5.5V Memory organisation: 512kx16bit Kind of interface: parallel Mounting: SMD Case: TSOP44 II Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS62C5128BL-45TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel Memory: 4Mb SRAM Kind of memory: SRAM Operating temperature: -40...85°C Access time: 45ns Operating voltage: 5V Memory organisation: 512kx8bit Kind of interface: parallel Mounting: SMD Case: TSOP32 II Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS62C51216AL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II Memory: 8Mb SRAM Kind of memory: SRAM Operating temperature: -40...85°C Access time: 55ns Operating voltage: 4.5...5.5V Memory organisation: 512kx16bit Kind of interface: parallel Mounting: SMD Case: TSOP44 II Type of integrated circuit: SRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS46TR16128CL-125KBLA1-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS46TR16128CL-125KBLA2 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...105°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS43TR16128CL-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS43TR16128CL-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS43TR16128CL-125KBL-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS43TR16640CL-125JBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 12.5ns Clock frequency: 1.066GHz Memory: 1Gb DRAM Memory organisation: 64Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS46TR16128CL-125KBLA1 | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS43TR16256B-107MBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96 Memory: 4Gb DRAM Supply voltage: 1.5V DC Operating temperature: -40...95°C Kind of memory: DDR3; SDRAM Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Access time: 13.91ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS43TR16256B-125KBL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Memory: 4Gb DRAM Supply voltage: 1.5V DC Operating temperature: 0...95°C Kind of memory: DDR3; SDRAM Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Access time: 13.75ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS43TR16256B-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96 Memory: 4Gb DRAM Supply voltage: 1.5V DC Operating temperature: -40...95°C Kind of memory: DDR3; SDRAM Clock frequency: 1.066GHz Memory organisation: 256Mx16bit Type of integrated circuit: DRAM memory Case: TWBGA96 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Access time: 13.75ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
IS61WV25616EDBLL-8TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TSOP44 II Type of integrated circuit: SRAM memory Case: TSOP44 II Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating voltage: 3.3V Operating temperature: -40...85°C Access time: 8ns Memory: 4Mb SRAM Memory organisation: 256kx16bit |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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IS61LV25616AL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IS25LP128F-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IS25LP128F-JKLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IS25LP128F-JLLA3 | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating frequency: 166MHz Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS25LP128F-JLLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating frequency: 166MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS25LP128F-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS25LP128F-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IS25WP128-JKLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 133MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS25WP128F-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: DTR; QPI; SPI Operating voltage: 1.65...1.95V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IS61QDB21M18A-250B4LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS61QDB24M18A-250B4LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS62C1024AL-35TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Mounting: SMD
Operating voltage: 5V
Operating temperature: -40...85°C
Kind of interface: parallel
Case: TSOP32
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 35ns
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Mounting: SMD
Operating voltage: 5V
Operating temperature: -40...85°C
Kind of interface: parallel
Case: TSOP32
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 35ns
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 168.31 грн |
| IS61C1024AL-12TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 153 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 163.16 грн |
| IS61C1024AL-12HLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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В кошику
од. на суму грн.
| IS66WVE4M16EALL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS66WVE4M16EBLL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS66WVE4M16ECLL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
| IS66WVE4M16TBLL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику
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| IS66WVE4M16EALL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
| IS66WVE4M16EBLL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS66WVE4M16ECLL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
| IS66WVE4M16TBLL-70BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику
од. на суму грн.
| IS61C25616AL-10KLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 680.11 грн |
| 5+ | 574.12 грн |
| IS61C25616AL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 536.70 грн |
| 5+ | 448.13 грн |
| 25+ | 398.69 грн |
| IS61WV5128BLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 358.95 грн |
| 3+ | 316.56 грн |
| 10+ | 299.02 грн |
| 20+ | 288.65 грн |
| 50+ | 284.67 грн |
| IS61WV5128BLL-10KLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 368.39 грн |
| 5+ | 323.74 грн |
| 19+ | 313.37 грн |
| IS61WV6416DBLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.12 грн |
| IS61WV12816DBLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 429.36 грн |
| IS62C25616EL-45TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS62C25616EL-45TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| IS25WX128-JHLA3 |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Kind of memory: NOR
Kind of interface: serial
Mounting: SMD
Case: TFBGA24
Interface: xSPI
Operating temperature: -40...125°C
Operating voltage: 1.7...2V
Memory: 128Mb FLASH
Operating frequency: 200MHz
Type of integrated circuit: FLASH memory
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; xSPI; 200MHz; 1.7÷2V; TFBGA24; serial
Kind of memory: NOR
Kind of interface: serial
Mounting: SMD
Case: TFBGA24
Interface: xSPI
Operating temperature: -40...125°C
Operating voltage: 1.7...2V
Memory: 128Mb FLASH
Operating frequency: 200MHz
Type of integrated circuit: FLASH memory
Kind of package: in-tray; tube
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| IS62C256AL-45TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 102.19 грн |
| IS62C25616BL-45TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS62C25616BL-45TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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В кошику
од. на суму грн.
| IS62C256AL-25ULI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS62C256AL-25ULI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS62C256AL-45TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS62C256AL-45ULI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32x8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32x8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS25LP128F-JBLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Mounting: SMD
Operating temperature: -40...105°C
Case: SO8
Kind of package: in-tray; tube
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.3...3.6V
Operating frequency: 166MHz
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Mounting: SMD
Operating temperature: -40...105°C
Case: SO8
Kind of package: in-tray; tube
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.3...3.6V
Operating frequency: 166MHz
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
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| IS25LP128F-JBLA3 |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Kind of package: in-tray; tube
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.3...3.6V
Operating frequency: 166MHz
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Kind of package: in-tray; tube
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.3...3.6V
Operating frequency: 166MHz
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
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| IS25LP128-JBLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Mounting: SMD
Operating temperature: -40...105°C
Case: SO8
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Mounting: SMD
Operating temperature: -40...105°C
Case: SO8
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
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| IS25LP128-JKLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
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| IS25LP128-JLLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
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| IS25LP128-JMLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Mounting: SMD
Operating temperature: -40...105°C
Case: SO16
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO16
Mounting: SMD
Operating temperature: -40...105°C
Case: SO16
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
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| IS25LP128F-JBLA3-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.3...3.6V
Operating frequency: 166MHz
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO8
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: serial
Operating voltage: 2.3...3.6V
Operating frequency: 166MHz
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Type of integrated circuit: FLASH memory
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| IS62C5128BL-45TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 5V
Memory organisation: 512kx8bit
Kind of interface: parallel
Mounting: SMD
Case: TSOP32 II
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 5V
Memory organisation: 512kx8bit
Kind of interface: parallel
Mounting: SMD
Case: TSOP32 II
Type of integrated circuit: SRAM memory
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| IS62C51216AL-55TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II
Memory: 8Mb SRAM
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 4.5...5.5V
Memory organisation: 512kx16bit
Kind of interface: parallel
Mounting: SMD
Case: TSOP44 II
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II
Memory: 8Mb SRAM
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 4.5...5.5V
Memory organisation: 512kx16bit
Kind of interface: parallel
Mounting: SMD
Case: TSOP44 II
Type of integrated circuit: SRAM memory
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| IS62C5128BL-45TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 5V
Memory organisation: 512kx8bit
Kind of interface: parallel
Mounting: SMD
Case: TSOP32 II
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 45ns; TSOP32 II; parallel
Memory: 4Mb SRAM
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 5V
Memory organisation: 512kx8bit
Kind of interface: parallel
Mounting: SMD
Case: TSOP32 II
Type of integrated circuit: SRAM memory
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| IS62C51216AL-55TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II
Memory: 8Mb SRAM
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 4.5...5.5V
Memory organisation: 512kx16bit
Kind of interface: parallel
Mounting: SMD
Case: TSOP44 II
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 4.5÷5.5V; 55ns; TSOP44 II
Memory: 8Mb SRAM
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 4.5...5.5V
Memory organisation: 512kx16bit
Kind of interface: parallel
Mounting: SMD
Case: TSOP44 II
Type of integrated circuit: SRAM memory
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| IS46TR16128CL-125KBLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
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| IS46TR16128CL-125KBLA2 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
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| IS43TR16128CL-125KBLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
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| IS43TR16128CL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
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| IS43TR16128CL-125KBL-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
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| IS43TR16640CL-125JBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 12.5ns
Clock frequency: 1.066GHz
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1066MHz; 12.5ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 12.5ns
Clock frequency: 1.066GHz
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
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| IS46TR16128CL-125KBLA1 |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
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| IS43TR16256B-107MBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.91ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.91ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.91ns
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| IS43TR16256B-125KBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: 0...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: 0...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
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| IS43TR16256B-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1066MHz; 13.75ns; TWBGA96
Memory: 4Gb DRAM
Supply voltage: 1.5V DC
Operating temperature: -40...95°C
Kind of memory: DDR3; SDRAM
Clock frequency: 1.066GHz
Memory organisation: 256Mx16bit
Type of integrated circuit: DRAM memory
Case: TWBGA96
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Access time: 13.75ns
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| IS61WV25616EDBLL-8TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating voltage: 3.3V
Operating temperature: -40...85°C
Access time: 8ns
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TSOP44 II
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating voltage: 3.3V
Operating temperature: -40...85°C
Access time: 8ns
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
на замовлення 135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 417.34 грн |
| 5+ | 358.82 грн |
| 25+ | 318.95 грн |
| 100+ | 279.08 грн |
| IS61LV25616AL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 427.64 грн |
| 5+ | 374.77 грн |
| IS25LP128F-JKLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of package: in-tray; tube
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| IS25LP128F-JKLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of package: reel; tape
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| IS25LP128F-JLLA3 |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Kind of package: in-tray; tube
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| IS25LP128F-JLLA3-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Kind of package: reel; tape
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| IS25LP128F-JLLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of package: in-tray; tube
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| IS25LP128F-JLLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of package: reel; tape
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| IS25WP128-JKLE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
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| IS25WP128F-JKLE |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: DTR; QPI; SPI
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of package: in-tray; tube
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