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IS66WVE2M16EBLL-70BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BBFA3B040D5&compId=IS66WVE2M16EALL-70BLI.pdf?ci_sign=00c6fbdf599e0c032479ee7dcd6ff52df3cd8f31 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE2M16ECLL-70BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BF29B1280D5&compId=IS66WVE2M16EALL-70BLI.pdf?ci_sign=5bf2142be6150e41ca01db94859077b9fd7f4ad0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE4M16EALL-70BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59CAD307D20D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=ab4ad1cb52b12fce06aa7d6f792c4e7259326151 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS66WVE4M16EBLL-70BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59CAD307F20D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=0fbc44402d8fd30a22a048ee209747ec72e2bf3f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS66WVE4M16ECLL-70BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59C76EFF120D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=1805662ff9c9e47689b69d464f5dd747c9751bdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS66WVE4M16TBLL-70BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59C840D1BA0D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=4509e40f21a264529dfaf6c178febca8158a47b0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS66WVH8M8ALL-166B1LI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59CB71E35A0D5&compId=IS66WVH8M8ALL-166B1LI.pdf?ci_sign=a8c9f8c4cb6a81d07c1940b13d5ca770fed5be7e Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 36ns
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IS66WV1M16EBLL-55BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A5962D7E3940D5&compId=IS66WV1M16EBLL-55BLI.pdf?ci_sign=1b66468dc04fe92bbefd894510d8b2d972672ea4 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
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IS66WV1M16EBLL-70BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A596E2557DA0D5&compId=IS66WV1M16EBLL-55BLI.pdf?ci_sign=ee8d2ca104adef57a00ee965b55cbe2356352521 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVO32M8DALL-200BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59E4F0F3EE0D5&compId=IS66WVO32M8DALL-200BLI.pdf?ci_sign=2b9475cf36d6a43a5ff1bbf6cc32ac7a22c8f61e Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
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IS66WVC2M16EALL-7010BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59B9BE086E0D5&compId=IS66WVC2M16EALL-7010BLI.pdf?ci_sign=77b1051f46a60f58dfc4eedee1606d6b240a2873 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVC2M16ECLL-7010BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BE1519A60D5&compId=IS66WVC2M16EALL-7010BLI.pdf?ci_sign=2e6cb173199e0ce72e3b5d97f9efc16c14afd9a4 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVC4M16EALL-7010BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59B685240E0D5&compId=IS66WVC4M16ECLL-7010BLI.pdf?ci_sign=81f143601451d76e1eb94bf4a572bd22c296fc26 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVC4M16EALL-7010BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BE151A080D5&compId=IS66WVC4M16ECLL-7010BLI.pdf?ci_sign=9c279fd6bde16c97e00950c8267a63528576354e Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVC4M16ECLL-7010BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BBFA3A8C0D5&compId=IS66WVC4M16ECLL-7010BLI.pdf?ci_sign=085f033da9fbfa48727d7a1e204f7dd1c0dc2921 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE1M16EBLL-70BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BF5E268A0D5&compId=IS66WVE1M16EBLL-70BLI.pdf?ci_sign=112a35882ba8f9069f9a427afb84d507ff608744 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE2M16EBLL-70BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BF29B1140D5&compId=IS66WVE2M16EALL-70BLI.pdf?ci_sign=857d186be53f6a5ddcab9f5431838bf57df0ce08 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE2M16ECLL-70BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BE151AD00D5&compId=IS66WVE2M16EALL-70BLI.pdf?ci_sign=22ba2f03a376a0e8f7eb48783b71d325a884dec6 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE2M16TCLL-70BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BE151AE40D5&compId=IS66WVE2M16EALL-70BLI.pdf?ci_sign=d223659a4feaca0193c3a54ac959a6bd31c1d23c Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE4M16EALL-70BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59CAD307E60D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=fe2e06ca8fb81c31a4c1376ca2daf6c4fad0bda1 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS66WVE4M16EBLL-70BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59CB71E2E00D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=d06f91622946319beee42545a351374522b11cce Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS66WVE4M16ECLL-70BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59C840D1A60D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=dd682e8fcebb8b8de6ad1d3b8816d0e8b381132b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS66WVE4M16TBLL-70BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59C840D1CE0D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=3440aff658447e364649e6f342a2fd27fff6a5f2 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS66WVH16M8DALL-166B1LI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59C76EFFAE0D5&compId=IS66WVH16M8DALL-166B1LI.pdf?ci_sign=da6f4eefc3f5800aa4bf1bb1603fd6dc213c77d6 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 1.7...1.95V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
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IS66WVH8M8ALL-166B1LI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59D781B9160D5&compId=IS66WVH8M8ALL-166B1LI.pdf?ci_sign=162bd55c96e37bf032322a5d3d41b926739977a2 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 36ns
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IS64LF204818B-7.5TQLA3 IS64LF204818B-7.5TQLA3 ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C8CB385AE0D5&compId=IS61LF102436B-7.5TQLI.pdf?ci_sign=9fe8cb5fe773434ed83644f103363451d16398c4 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 7.5ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Case: TQFP100
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IS61LF204818B-7.5TQLI IS61LF204818B-7.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C8A0334AA0D5&compId=IS61LF102436B-7.5TQLI.pdf?ci_sign=0df48be535a41ad434ee02cd50b41e2be9d5e915 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 7.5ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Case: TQFP100
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IS45S16400J-6CTLA1-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A49FF3FB4260D5&compId=IS42S16400J-5BL.pdf?ci_sign=90fac9b567a17dae7a8f6a9804fe58580a1ec9fd Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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IS45S16400J-7CTLA2-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4A08EE146C0D5&compId=IS42S16400J-5BL.pdf?ci_sign=271b783a42c8f0a8cb20dbd81d29f8ced8019987 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Memory organisation: 1Mx16bitx4
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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IS64LF25636A-7.5B3LA3 ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C8CB386600D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=dec05ef43017bc2e77fda9b6966aa1a0014091a5 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64LF25636A-7.5TQLA3 IS64LF25636A-7.5TQLA3 ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C8CB386740D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=cf1d4d188de8afc9121018a4694ac837060d8675 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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В кошику  од. на суму  грн.
IS64LF25636A-7.5TQLA3-TR IS64LF25636A-7.5TQLA3-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C918890B20D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=9d9548592e42914a9359722a9d32e09353117265 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS61LF25636A-7.5TQLI IS61LF25636A-7.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C918890C60D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=264a0e180c3f47336bc5ec5397522c9d5d8bd273 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику  од. на суму  грн.
IS61LF25636A-7.5TQLI-TR IS61LF25636A-7.5TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C918890DC0D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=ab095c3c9b76087254c49801c7d09606b6d2b254 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS61NLF25636A-7.5TQLI IS61NLF25636A-7.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58B4A4099C0D5&compId=IS61NLF25636A-7.5TQLI.pdf?ci_sign=4017c265fc6ad63770e9218dd7e682b0de9f3e35 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61NLP25636A-200B3LI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D34F63820D5&compId=IS61NLP25636A-200B3LI.pdf?ci_sign=f15de7ea21938dcd0825a17f130bcba21d76b126 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику  од. на суму  грн.
IS61NLP25636A-200B3LI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D78659080D5&compId=IS61NLP25636A-200B3LI.pdf?ci_sign=a82f93c89c8dee6220614d4c887050b4de0217b6 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику  од. на суму  грн.
IS61NLP25636A-200TQLI IS61NLP25636A-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D786591E0D5&compId=IS61NLP25636A-200B3LI.pdf?ci_sign=6310fc3ff03ee4fb86514c05c15d43e6824a6c7d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61VPS25636A-200TQLI IS61VPS25636A-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A592009A1960D5&compId=IS61LPS25636A-200B3LI.pdf?ci_sign=431b1458272886dd3d5b9068a56f40b0c041998a Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 2.5V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 2.5V
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику  од. на суму  грн.
IS61VPS25636A-200TQLI-TR IS61VPS25636A-200TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A5924E60A320D5&compId=IS61LPS25636A-200B3LI.pdf?ci_sign=3c5bc06fbccc1cb0bef9fad6fe71e0792c5d6577 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 2.5V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 2.5V
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS62WV5128BLL-55TLI IS62WV5128BLL-55TLI ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B092A3FD708F2143&compId=62WV5128ALL.pdf?ci_sign=261d37195e33adc8ebc6b0b03402ac86eefebcf5 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
2+279.46 грн
4+248.49 грн
11+235.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IS62WV5128BLL-55TLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFFFF6F246424143&compId=62WV5128ALL.pdf?ci_sign=30f7d73214994948bbc1907e4138f1ff6bdac904 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS64WV25616BLL-10BLA3 ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A596DB94C800D5&compId=IS61WV25616BLL-10BLI.pdf?ci_sign=d7dd52aa477650c4f996d5a9c785c069528e9a7f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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В кошику  од. на суму  грн.
IS64WV25616BLL-10BLA3-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A596DB94C940D5&compId=IS61WV25616BLL-10BLI.pdf?ci_sign=55689be0dbcca0616d7143ec77d6eaff3e19ef3a Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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В кошику  од. на суму  грн.
IS61WV25616BLL-10BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A596DB94CA80D5&compId=IS61WV25616BLL-10BLI.pdf?ci_sign=5e1e078fcd0dc977ee73eafd5c6622dcefd61c44 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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В кошику  од. на суму  грн.
IS61WV25616BLL-10BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A596D9E22C00D5&compId=IS61WV25616BLL-10BLI.pdf?ci_sign=c5bad4edd9061c8aa97998d2ca25d35b2fde0e3a Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS62WV25616BLL-55BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59707C7DA60D5&compId=IS62WV25616BLL-55BLI.pdf?ci_sign=e1e6f9bb5a24357909fe1aaf06d7b3fa3a42d241 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS62WV25616BLL-55BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59707C7DBA0D5&compId=IS62WV25616BLL-55BLI.pdf?ci_sign=50a1a73736b7bb1de3d71e6f32dad9af16213b8f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS64WV25616EDBLL-10BLA3 ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A597CC5D6340D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=900c8356add3efc00960bc819b6e935ede24fdb1 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64WV25616EDBLL-10BLA3-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A597CC5D6480D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=ca5ecb8a7056d01efd92ab6abc2c25b8df885e7f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS61WV25616EDBLL-10BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59741E2F800D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=43f0fa3bf2779da5f45542ae7bc7ffc01596d26b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61WV25616EDBLL-10BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59741E2F940D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=68563f1245ff28dd313c56c4b2aaab34d1e65d2b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS61WV25616EDBLL-8BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A598115D0A60D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=59c848c79857a92af38a7af36dda40a059f33d13 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61WV25616EDBLL-8BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A598115D0BA0D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=e9b0551f51d17314ef8b007e3108bf05f022386f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS43TR16512B-125KBL ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4986BAF0F60D5&compId=IS43TR16512B-125KBL.pdf?ci_sign=0c4a5713fd94cdf090f05820e1d87eaa7c2d649d Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Kind of interface: parallel
Access time: 13.75ns
Supply voltage: 1.5V DC
Clock frequency: 933MHz
Case: TWBGA96
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
Kind of memory: DDR3; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
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IS43TR16512B-125KBLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A498EC54E2A0D5&compId=IS43TR16512B-125KBL.pdf?ci_sign=d9cdd2ff840c741bbbd8d71107e15b8344cd6cde Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Kind of interface: parallel
Access time: 13.75ns
Supply voltage: 1.5V DC
Clock frequency: 933MHz
Case: TWBGA96
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
Kind of memory: DDR3; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
товару немає в наявності
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IS61C25616AL-10KLI IS61C25616AL-10KLI ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B09474FA5D6C0143&compId=61-64C25616AL-AS.pdf?ci_sign=f897f4a9caf97270b5e4f7364531ecb24871d6fc Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+670.70 грн
5+566.17 грн
В кошику  од. на суму  грн.
IS61C25616AL-10TLI IS61C25616AL-10TLI ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B093FB7E49842143&compId=61-64C25616AL-AS.pdf?ci_sign=d6a489abc5e3a6941c7e25952f69782c26d7ac29 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
1+527.58 грн
5+441.14 грн
25+391.60 грн
В кошику  од. на суму  грн.
IS61WV5128BLL-10TLI IS61WV5128BLL-10TLI ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AAEBFFFB25046143&compId=61-64WV5128Axx-Bxx.pdf?ci_sign=92cccbe1cba01d1f8d783e0d6d79f728aaceebed Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
2+366.68 грн
3+323.19 грн
4+305.89 грн
9+288.59 грн
50+283.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IS62WV5128BLL-55T2LI IS62WV5128BLL-55T2LI ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AAECA5C67E0E8143&compId=62WV5128ALL.pdf?ci_sign=64af47de0539c534d2ee54fc746e950c6357970b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Operating voltage: 2.5...3.6V
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Memory organisation: 512kx8bit
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
2+407.33 грн
3+363.29 грн
7+343.64 грн
25+330.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IS66WVE2M16EBLL-70BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BBFA3B040D5&compId=IS66WVE2M16EALL-70BLI.pdf?ci_sign=00c6fbdf599e0c032479ee7dcd6ff52df3cd8f31
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE2M16ECLL-70BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BF29B1280D5&compId=IS66WVE2M16EALL-70BLI.pdf?ci_sign=5bf2142be6150e41ca01db94859077b9fd7f4ad0
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE4M16EALL-70BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59CAD307D20D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=ab4ad1cb52b12fce06aa7d6f792c4e7259326151
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE4M16EBLL-70BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59CAD307F20D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=0fbc44402d8fd30a22a048ee209747ec72e2bf3f
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE4M16ECLL-70BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59C76EFF120D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=1805662ff9c9e47689b69d464f5dd747c9751bdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE4M16TBLL-70BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59C840D1BA0D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=4509e40f21a264529dfaf6c178febca8158a47b0
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVH8M8ALL-166B1LI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59CB71E35A0D5&compId=IS66WVH8M8ALL-166B1LI.pdf?ci_sign=a8c9f8c4cb6a81d07c1940b13d5ca770fed5be7e
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 36ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WV1M16EBLL-55BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A5962D7E3940D5&compId=IS66WV1M16EBLL-55BLI.pdf?ci_sign=1b66468dc04fe92bbefd894510d8b2d972672ea4
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WV1M16EBLL-70BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A596E2557DA0D5&compId=IS66WV1M16EBLL-55BLI.pdf?ci_sign=ee8d2ca104adef57a00ee965b55cbe2356352521
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVO32M8DALL-200BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59E4F0F3EE0D5&compId=IS66WVO32M8DALL-200BLI.pdf?ci_sign=2b9475cf36d6a43a5ff1bbf6cc32ac7a22c8f61e
Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVC2M16EALL-7010BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59B9BE086E0D5&compId=IS66WVC2M16EALL-7010BLI.pdf?ci_sign=77b1051f46a60f58dfc4eedee1606d6b240a2873
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVC2M16ECLL-7010BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BE1519A60D5&compId=IS66WVC2M16EALL-7010BLI.pdf?ci_sign=2e6cb173199e0ce72e3b5d97f9efc16c14afd9a4
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVC4M16EALL-7010BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59B685240E0D5&compId=IS66WVC4M16ECLL-7010BLI.pdf?ci_sign=81f143601451d76e1eb94bf4a572bd22c296fc26
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVC4M16EALL-7010BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BE151A080D5&compId=IS66WVC4M16ECLL-7010BLI.pdf?ci_sign=9c279fd6bde16c97e00950c8267a63528576354e
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVC4M16ECLL-7010BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BBFA3A8C0D5&compId=IS66WVC4M16ECLL-7010BLI.pdf?ci_sign=085f033da9fbfa48727d7a1e204f7dd1c0dc2921
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE1M16EBLL-70BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BF5E268A0D5&compId=IS66WVE1M16EBLL-70BLI.pdf?ci_sign=112a35882ba8f9069f9a427afb84d507ff608744
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE2M16EBLL-70BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BF29B1140D5&compId=IS66WVE2M16EALL-70BLI.pdf?ci_sign=857d186be53f6a5ddcab9f5431838bf57df0ce08
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE2M16ECLL-70BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BE151AD00D5&compId=IS66WVE2M16EALL-70BLI.pdf?ci_sign=22ba2f03a376a0e8f7eb48783b71d325a884dec6
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE2M16TCLL-70BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59BE151AE40D5&compId=IS66WVE2M16EALL-70BLI.pdf?ci_sign=d223659a4feaca0193c3a54ac959a6bd31c1d23c
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE4M16EALL-70BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59CAD307E60D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=fe2e06ca8fb81c31a4c1376ca2daf6c4fad0bda1
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE4M16EBLL-70BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59CB71E2E00D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=d06f91622946319beee42545a351374522b11cce
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVE4M16ECLL-70BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59C840D1A60D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=dd682e8fcebb8b8de6ad1d3b8816d0e8b381132b
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику  од. на суму  грн.
IS66WVE4M16TBLL-70BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59C840D1CE0D5&compId=IS66WVE4M16EALL-70BLI.pdf?ci_sign=3440aff658447e364649e6f342a2fd27fff6a5f2
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVH16M8DALL-166B1LI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59C76EFFAE0D5&compId=IS66WVH16M8DALL-166B1LI.pdf?ci_sign=da6f4eefc3f5800aa4bf1bb1603fd6dc213c77d6
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 1.7...1.95V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS66WVH8M8ALL-166B1LI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59D781B9160D5&compId=IS66WVH8M8ALL-166B1LI.pdf?ci_sign=162bd55c96e37bf032322a5d3d41b926739977a2
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 36ns
товару немає в наявності
В кошику  од. на суму  грн.
IS64LF204818B-7.5TQLA3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C8CB385AE0D5&compId=IS61LF102436B-7.5TQLI.pdf?ci_sign=9fe8cb5fe773434ed83644f103363451d16398c4
IS64LF204818B-7.5TQLA3
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 7.5ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Case: TQFP100
товару немає в наявності
В кошику  од. на суму  грн.
IS61LF204818B-7.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C8A0334AA0D5&compId=IS61LF102436B-7.5TQLI.pdf?ci_sign=0df48be535a41ad434ee02cd50b41e2be9d5e915
IS61LF204818B-7.5TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 7.5ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Case: TQFP100
товару немає в наявності
В кошику  од. на суму  грн.
IS45S16400J-6CTLA1-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A49FF3FB4260D5&compId=IS42S16400J-5BL.pdf?ci_sign=90fac9b567a17dae7a8f6a9804fe58580a1ec9fd
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS45S16400J-7CTLA2-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4A08EE146C0D5&compId=IS42S16400J-5BL.pdf?ci_sign=271b783a42c8f0a8cb20dbd81d29f8ced8019987
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Memory organisation: 1Mx16bitx4
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS64LF25636A-7.5B3LA3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C8CB386600D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=dec05ef43017bc2e77fda9b6966aa1a0014091a5
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS64LF25636A-7.5TQLA3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C8CB386740D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=cf1d4d188de8afc9121018a4694ac837060d8675
IS64LF25636A-7.5TQLA3
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS64LF25636A-7.5TQLA3-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C918890B20D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=9d9548592e42914a9359722a9d32e09353117265
IS64LF25636A-7.5TQLA3-TR
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS61LF25636A-7.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C918890C60D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=264a0e180c3f47336bc5ec5397522c9d5d8bd273
IS61LF25636A-7.5TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61LF25636A-7.5TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C918890DC0D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=ab095c3c9b76087254c49801c7d09606b6d2b254
IS61LF25636A-7.5TQLI-TR
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLF25636A-7.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58B4A4099C0D5&compId=IS61NLF25636A-7.5TQLI.pdf?ci_sign=4017c265fc6ad63770e9218dd7e682b0de9f3e35
IS61NLF25636A-7.5TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP25636A-200B3LI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D34F63820D5&compId=IS61NLP25636A-200B3LI.pdf?ci_sign=f15de7ea21938dcd0825a17f130bcba21d76b126
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP25636A-200B3LI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D78659080D5&compId=IS61NLP25636A-200B3LI.pdf?ci_sign=a82f93c89c8dee6220614d4c887050b4de0217b6
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP25636A-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D786591E0D5&compId=IS61NLP25636A-200B3LI.pdf?ci_sign=6310fc3ff03ee4fb86514c05c15d43e6824a6c7d
IS61NLP25636A-200TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61VPS25636A-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A592009A1960D5&compId=IS61LPS25636A-200B3LI.pdf?ci_sign=431b1458272886dd3d5b9068a56f40b0c041998a
IS61VPS25636A-200TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 2.5V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 2.5V
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61VPS25636A-200TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A5924E60A320D5&compId=IS61LPS25636A-200B3LI.pdf?ci_sign=3c5bc06fbccc1cb0bef9fad6fe71e0792c5d6577
IS61VPS25636A-200TQLI-TR
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 2.5V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 2.5V
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS62WV5128BLL-55TLI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B092A3FD708F2143&compId=62WV5128ALL.pdf?ci_sign=261d37195e33adc8ebc6b0b03402ac86eefebcf5
IS62WV5128BLL-55TLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+279.46 грн
4+248.49 грн
11+235.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IS62WV5128BLL-55TLI-TR pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFFFF6F246424143&compId=62WV5128ALL.pdf?ci_sign=30f7d73214994948bbc1907e4138f1ff6bdac904
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS64WV25616BLL-10BLA3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A596DB94C800D5&compId=IS61WV25616BLL-10BLI.pdf?ci_sign=d7dd52aa477650c4f996d5a9c785c069528e9a7f
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS64WV25616BLL-10BLA3-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A596DB94C940D5&compId=IS61WV25616BLL-10BLI.pdf?ci_sign=55689be0dbcca0616d7143ec77d6eaff3e19ef3a
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS61WV25616BLL-10BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A596DB94CA80D5&compId=IS61WV25616BLL-10BLI.pdf?ci_sign=5e1e078fcd0dc977ee73eafd5c6622dcefd61c44
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61WV25616BLL-10BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A596D9E22C00D5&compId=IS61WV25616BLL-10BLI.pdf?ci_sign=c5bad4edd9061c8aa97998d2ca25d35b2fde0e3a
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS62WV25616BLL-55BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59707C7DA60D5&compId=IS62WV25616BLL-55BLI.pdf?ci_sign=e1e6f9bb5a24357909fe1aaf06d7b3fa3a42d241
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS62WV25616BLL-55BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59707C7DBA0D5&compId=IS62WV25616BLL-55BLI.pdf?ci_sign=50a1a73736b7bb1de3d71e6f32dad9af16213b8f
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS64WV25616EDBLL-10BLA3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A597CC5D6340D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=900c8356add3efc00960bc819b6e935ede24fdb1
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS64WV25616EDBLL-10BLA3-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A597CC5D6480D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=ca5ecb8a7056d01efd92ab6abc2c25b8df885e7f
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS61WV25616EDBLL-10BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59741E2F800D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=43f0fa3bf2779da5f45542ae7bc7ffc01596d26b
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61WV25616EDBLL-10BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59741E2F940D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=68563f1245ff28dd313c56c4b2aaab34d1e65d2b
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS61WV25616EDBLL-8BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A598115D0A60D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=59c848c79857a92af38a7af36dda40a059f33d13
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61WV25616EDBLL-8BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A598115D0BA0D5&compId=IS61WV25616EDBLL-10BLI.pdf?ci_sign=e9b0551f51d17314ef8b007e3108bf05f022386f
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 8ns; TFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 8ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IS43TR16512B-125KBL pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4986BAF0F60D5&compId=IS43TR16512B-125KBL.pdf?ci_sign=0c4a5713fd94cdf090f05820e1d87eaa7c2d649d
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: 0...95°C
Kind of interface: parallel
Access time: 13.75ns
Supply voltage: 1.5V DC
Clock frequency: 933MHz
Case: TWBGA96
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
Kind of memory: DDR3; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
IS43TR16512B-125KBLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A498EC54E2A0D5&compId=IS43TR16512B-125KBL.pdf?ci_sign=d9cdd2ff840c741bbbd8d71107e15b8344cd6cde
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 933MHz; 13.75ns; TWBGA96
Operating temperature: -40...95°C
Kind of interface: parallel
Access time: 13.75ns
Supply voltage: 1.5V DC
Clock frequency: 933MHz
Case: TWBGA96
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
Kind of memory: DDR3; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
IS61C25616AL-10KLI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B09474FA5D6C0143&compId=61-64C25616AL-AS.pdf?ci_sign=f897f4a9caf97270b5e4f7364531ecb24871d6fc
IS61C25616AL-10KLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+670.70 грн
5+566.17 грн
В кошику  од. на суму  грн.
IS61C25616AL-10TLI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B093FB7E49842143&compId=61-64C25616AL-AS.pdf?ci_sign=d6a489abc5e3a6941c7e25952f69782c26d7ac29
IS61C25616AL-10TLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+527.58 грн
5+441.14 грн
25+391.60 грн
В кошику  од. на суму  грн.
IS61WV5128BLL-10TLI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AAEBFFFB25046143&compId=61-64WV5128Axx-Bxx.pdf?ci_sign=92cccbe1cba01d1f8d783e0d6d79f728aaceebed
IS61WV5128BLL-10TLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+366.68 грн
3+323.19 грн
4+305.89 грн
9+288.59 грн
50+283.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IS62WV5128BLL-55T2LI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AAECA5C67E0E8143&compId=62WV5128ALL.pdf?ci_sign=64af47de0539c534d2ee54fc746e950c6357970b
IS62WV5128BLL-55T2LI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Operating voltage: 2.5...3.6V
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Memory organisation: 512kx8bit
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+407.33 грн
3+363.29 грн
7+343.64 грн
25+330.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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