Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IS62C1024AL-35TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel Operating temperature: -40...85°C Mounting: SMD Kind of interface: parallel Case: TSOP32 Kind of memory: SRAM Type of integrated circuit: SRAM memory Access time: 35ns Operating voltage: 5V Memory: 1Mb SRAM Memory organisation: 128kx8bit |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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IS66WVH8M8BLL-100B1LI | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 3V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 40ns |
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IS66WVH8M8BLL-100B1LI-TR | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 3V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 40ns |
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IS66WVH16M8DBLL-100B1LI | ISSI |
![]() Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Operating voltage: 2.7...3.6V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube |
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IS61LPS51218A-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx18bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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IS61LPS51236B-200B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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IS61LPS51236B-200B3LI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: reel; tape Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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IS61LPS51236B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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IS61LPS51236B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: reel; tape Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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IS61VPS51236B-200B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 2.5V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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IS61VPS51236B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 2.5V Memory: 18Mb SRAM Kind of package: reel; tape Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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IS61VPS51236B-250B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 2.6ns Operating voltage: 2.5V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
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IS61C1024AL-12TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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IS61C1024AL-12HLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
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IS61C1024AL-12JLI-TR | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
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IS61C1024AL-12TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
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IS66WV1M16EBLL-55BLI | ISSI |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
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IS66WV1M16EBLL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVE1M16EBLL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVE2M16EALL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVE2M16EBLL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVE2M16ECLL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVE4M16EALL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVE4M16EBLL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVE4M16ECLL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVE4M16TBLL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVH8M8ALL-166B1LI | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 1.8V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 36ns |
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IS66WV1M16EBLL-55BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 55ns |
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IS66WV1M16EBLL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.5...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 70ns |
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IS66WVO32M8DALL-200BLI | ISSI |
![]() Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 256Mb SRAM Memory organisation: 32Mx8bit Operating voltage: 1.8V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: in-tray; tube |
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IS66WVC2M16EALL-7010BLI | ISSI |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95V Case: VFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVC2M16ECLL-7010BLI | ISSI |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Case: VFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVC4M16EALL-7010BLI | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Case: VFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVC4M16EALL-7010BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Case: VFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 70ns |
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IS66WVC4M16ECLL-7010BLI | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Case: VFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 70ns |
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IS66WVE1M16EBLL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 70ns |
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IS66WVE2M16EBLL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 70ns |
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IS66WVE2M16ECLL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 70ns |
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IS66WVE2M16TCLL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 32Mb SRAM Memory organisation: 2Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 70ns |
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IS66WVE4M16EALL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 70ns |
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IS66WVE4M16EBLL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 70ns |
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IS66WVE4M16ECLL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 1.7...1.95/2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 70ns |
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IS66WVE4M16TBLL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 64Mb SRAM Memory organisation: 4Mx16bit Operating voltage: 2.7...3.6V Case: TFBGA48 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 70ns |
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IS66WVH16M8DALL-166B1LI | ISSI |
![]() Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Operating voltage: 1.7...1.95V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube |
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IS66WVH8M8ALL-166B1LI-TR | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 1.8V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 36ns |
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IS64LF204818B-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel Operating temperature: -40...125°C Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Access time: 7.5ns Operating voltage: 3.3V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Case: TQFP100 |
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IS61LF204818B-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel Operating temperature: -40...85°C Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Access time: 7.5ns Operating voltage: 3.3V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Case: TQFP100 |
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IS45S16400J-6CTLA1-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Kind of interface: parallel Mounting: SMD Case: TSOP54 II Memory organisation: 1Mx16bitx4 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 64Mb DRAM Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
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В кошику од. на суму грн. | |||||
IS45S16400J-7CTLA2-TR | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Kind of interface: parallel Mounting: SMD Case: TSOP54 II Memory organisation: 1Mx16bitx4 Operating temperature: -40...105°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 64Mb DRAM Clock frequency: 143MHz Type of integrated circuit: DRAM memory |
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В кошику од. на суму грн. | |||||
IS64LF25636A-7.5B3LA3 | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 7.5ns Case: PBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
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В кошику од. на суму грн. | |||||
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IS64LF25636A-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
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В кошику од. на суму грн. | ||||
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IS64LF25636A-7.5TQLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||
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IS61LF25636A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
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В кошику од. на суму грн. | ||||
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IS61LF25636A-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||
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IS61NLF25636A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
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В кошику од. на суму грн. | ||||
IS61NLP25636A-200B3LI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 200ns Case: PBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
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В кошику од. на суму грн. | |||||
IS61NLP25636A-200B3LI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 200ns Case: PBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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IS61NLP25636A-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 200ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IS61VPS25636A-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 2.5V; 3.1ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 2.5V Access time: 3.1ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IS61VPS25636A-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 2.5V; 3.1ns; TQFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 2.5V Access time: 3.1ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
IS62C1024AL-35TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: parallel
Case: TSOP32
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 35ns
Operating voltage: 5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: parallel
Case: TSOP32
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 35ns
Operating voltage: 5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
на замовлення 19 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 179.83 грн |
15+ | 160.68 грн |
IS66WVH8M8BLL-100B1LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 40ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 40ns
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В кошику
од. на суму грн.
IS66WVH8M8BLL-100B1LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 40ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 40ns
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В кошику
од. на суму грн.
IS66WVH16M8DBLL-100B1LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 2.7...3.6V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 2.7...3.6V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
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В кошику
од. на суму грн.
IS61LPS51218A-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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В кошику
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IS61LPS51236B-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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В кошику
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IS61LPS51236B-200B3LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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В кошику
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IS61LPS51236B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61LPS51236B-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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В кошику
од. на суму грн.
IS61VPS51236B-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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В кошику
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IS61VPS51236B-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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В кошику
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IS61VPS51236B-250B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 2.6ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 2.6ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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В кошику
од. на суму грн.
IS61C1024AL-12TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 153 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 166.25 грн |
25+ | 149.65 грн |
IS61C1024AL-12HLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS61C1024AL-12JLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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В кошику
од. на суму грн.
IS61C1024AL-12TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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од. на суму грн.
IS66WV1M16EBLL-55BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
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IS66WV1M16EBLL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE1M16EBLL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE2M16EALL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE2M16EBLL-70BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE2M16ECLL-70BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE4M16EALL-70BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE4M16EBLL-70BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE4M16ECLL-70BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE4M16TBLL-70BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVH8M8ALL-166B1LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 36ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 36ns
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IS66WV1M16EBLL-55BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 55ns
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IS66WV1M16EBLL-70BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.5...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVO32M8DALL-200BLI |
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Виробник: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256MbSRAM; 32Mx8bit; 1.8V; TFBGA24; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 256Mb SRAM
Memory organisation: 32Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
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IS66WVC2M16EALL-7010BLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVC2M16ECLL-7010BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVC4M16EALL-7010BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVC4M16EALL-7010BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVC4M16ECLL-7010BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: VFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 70ns
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IS66WVE1M16EBLL-70BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE2M16EBLL-70BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE2M16ECLL-70BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE2M16TCLL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE4M16EALL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE4M16EBLL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE4M16ECLL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95/2.7÷3.6V; 70ns
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 1.7...1.95/2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVE4M16TBLL-70BLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Operating voltage: 2.7...3.6V
Case: TFBGA48
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 70ns
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IS66WVH16M8DALL-166B1LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 1.7...1.95V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 1.7÷1.95V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 1.7...1.95V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
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IS66WVH8M8ALL-166B1LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 36ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 1.8V; 36ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 1.8V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 36ns
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IS64LF204818B-7.5TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 7.5ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Case: TQFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 7.5ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Case: TQFP100
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IS61LF204818B-7.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 7.5ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Case: TQFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 7.5ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Case: TQFP100
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IS45S16400J-6CTLA1-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
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IS45S16400J-7CTLA2-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Memory organisation: 1Mx16bitx4
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Memory organisation: 1Mx16bitx4
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Type of integrated circuit: DRAM memory
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IS64LF25636A-7.5B3LA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64LF25636A-7.5TQLA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64LF25636A-7.5TQLA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS61LF25636A-7.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61LF25636A-7.5TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS61NLF25636A-7.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61NLP25636A-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61NLP25636A-200B3LI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: PBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS61NLP25636A-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 200ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61VPS25636A-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 2.5V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 2.5V
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 2.5V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 2.5V
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61VPS25636A-200TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 2.5V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 2.5V
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 2.5V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 2.5V
Access time: 3.1ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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