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IS61LPS12836A-200TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A5200EB66740D5&compId=IS61LPS12836A-200TQLI.pdf?ci_sign=ea66e268d82020ff29bf6469fc0c585dfc1d5103 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61LPS25618A-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A520DD976D20D5&compId=IS61LPS12836A-200TQLI.pdf?ci_sign=efd765363f182c058644aefc4014754783019840 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61LPS25636A-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A5211045E740D5&compId=IS61LPS25636A-200B3LI.pdf?ci_sign=39e6fe3951ea6a73e638d68dd28d969b17f59c87 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61LPS25636A-200TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A52135BA3240D5&compId=IS61LPS25636A-200B3LI.pdf?ci_sign=6957ccb8243633b58c9abbb0d8fd7f392f0b12de Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61LPS25636B-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A52135BA3400D5&compId=IS61LPS25636B-200TQLI.pdf?ci_sign=b59eb222ed925c6d5eb2e964337450a655aab4c1 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61LPS25636B-200TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A52166E2AEC0D5&compId=IS61LPS25636B-200TQLI.pdf?ci_sign=08e24bb3ea17f165fc3388c6a79b7d32d67c8734 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61LPS51218A-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A521EE96EB80D5&compId=IS61LPS25636A-200B3LI.pdf?ci_sign=84ceb25a4ec4baaedf0b8f5e95622d08702b7b27 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
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IS61LPS51236B-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A5223658EEE0D5&compId=IS61LPS51236B-200B3LI.pdf?ci_sign=4559715efa50dc0e24fd91e9234260f5b3f51734 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61LPS51236B-200TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A52243762C80D5&compId=IS61LPS51236B-200B3LI.pdf?ci_sign=46097395ba440fabf0f571f5058e8c180448396c Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61NLP12836B-200TQLI IS61NLP12836B-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58CB847DDE0D5&compId=IS61NLP12836B-200TQLI.pdf?ci_sign=857a2243a65f642ef28b639d409139cbc4c53da3 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61NLP12836B-200TQLI-TR IS61NLP12836B-200TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58CB847DF20D5&compId=IS61NLP12836B-200TQLI.pdf?ci_sign=c68b49db270dafdcd8d89c8829c40f86b7e33eed Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61NLP25618A-200TQLI IS61NLP25618A-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D505016E0D5&compId=IS61NLP12836B-200TQLI.pdf?ci_sign=45210fc592563c8d52b0935f046bb3b22901c436 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61NLP25618A-200TQLI-TR IS61NLP25618A-200TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D34F636E0D5&compId=IS61NLP12836B-200TQLI.pdf?ci_sign=3862b19af49e0b996aa0b87786e5c5f0815ca7c4 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61NLP25636A-200TQLI IS61NLP25636A-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D786591E0D5&compId=IS61NLP25636A-200B3LI.pdf?ci_sign=6310fc3ff03ee4fb86514c05c15d43e6824a6c7d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61NLP25636B-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58DA807D000D5&compId=IS61NLP25636B-200B3LI.pdf?ci_sign=8247b7266a1c7fc255840dc38dbf310431075c72 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
IS61NLP25636B-200TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58DA807D140D5&compId=IS61NLP25636B-200B3LI.pdf?ci_sign=fbbbf2942293b8732c0e164326b4746788c1ac86 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS62WV51216BLL-55TLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B0E0A1CA30074143&compId=62WV51216ALL.pdf?ci_sign=2be4805c644ada4f9318e6866bb103881c0e53eb Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS61QDB42M36A-300M3L ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58EAEA512C0D5&compId=IS61QDB42M36A-300M3L.pdf?ci_sign=712e3b8333a92a158011cae1f07a9704a3a5905f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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IS42S86400F-6TL ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4841AB1FD40D5&compId=IS42S16320F-6BL.pdf?ci_sign=e3c6238fe6329fb392da88514677c30ac4a97a8c Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: 0...70°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
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IS42S86400F-6TLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4842A9ACAE0D5&compId=IS42S16320F-6BL.pdf?ci_sign=5beefd0c02451c76ddfa76cfaad8f0474f7dae92 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
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IS42S86400F-6TLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A48444877BA0D5&compId=IS42S16320F-6BL.pdf?ci_sign=064e2c41361c2869338f52897196db3859fa02af Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
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IS42S86400F-7TL ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A484B9E79820D5&compId=IS42S16320F-6BL.pdf?ci_sign=db914045e807208daea2efdea4d50776eca02812 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: 0...70°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
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В кошику  од. на суму  грн.
IS42S86400F-7TLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4847B647BE0D5&compId=IS42S16320F-6BL.pdf?ci_sign=e23f6866ceab2a06a937ecce9a232caec9b72eb4 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
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В кошику  од. на суму  грн.
IS42S86400F-7TLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A485165DE480D5&compId=IS42S16320F-6BL.pdf?ci_sign=cfc9e4da71df49fc3ed63d4bd27ed96908a7062c Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
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IS43R86400F-5BLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A492CC693240D5&compId=IS43R16320F-5BL.pdf?ci_sign=3f154616c1201c39d4d1c5feb346c6b9cf81bb37 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
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IS43DR86400E-25DBL ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A48A0D043580D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=a4c4b4bf984e9f255ac9b2dfd8d213996a13d525 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: 0...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
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IS43DR86400E-25DBLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A489D3971060D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=ea712c3dfe2e6e31f84d54659acbf41fce4669f6 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
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IS43DR86400E-3DBL ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A489F5915F20D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=2f29bedf754ea05515a8536393d7149ff2b3858a Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: 0...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
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IS43DR86400E-3DBLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A489F5916060D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=e8dfeabcb197c2fe2ee84d437978a0a055b093f9 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
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IS43DR86400E-3DBLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A48ABB40A3E0D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=c1ea8095a7989d351e553ccb60e5d69bf0ccb66b Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
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IS43DR86400E-25DBLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A48A8C497B40D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=e4fe13a8c9a47405cfda874c57c316ebf4601b1c Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
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IS61LF204836B-7.5TQLI IS61LF204836B-7.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C8A675C140D5&compId=IS61LF102436B-7.5TQLI.pdf?ci_sign=75567523521371cc56914e87c421e28f2efab222 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61VF204836B-7.5TQLI IS61VF204836B-7.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59180E80300D5&compId=IS61VF204836B-7.5TQLI.pdf?ci_sign=5c53476b31f896cc2597586a1b46fdef5d474423 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61NLP204836B-166TQLI IS61NLP204836B-166TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58CF9144760D5&compId=IS61NLP204836B-166TQLI.pdf?ci_sign=fa873069ca687062ba83afad426cda21b8a2fe2b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 3.8ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 72Mb SRAM
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IS61LF51218A-7.5TQLI IS61LF51218A-7.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C90047B800D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=89f5583ae0aa5dd4d86a21163f6d256e83b53d8e Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
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IS61LF51218A-7.5TQLI-TR IS61LF51218A-7.5TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C939E649A0D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=3ed667a7b6cf2c6d1037f904a08c2663202a818d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
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IS61LF51218B-7.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C939E64AE0D5&compId=IS61LF25636B-7.5TQLI.pdf?ci_sign=582f5ccef7f460c474b985bb9de2fee5f2bacf52 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
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IS61LF51218B-7.5TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C939E64C20D5&compId=IS61LF25636B-7.5TQLI.pdf?ci_sign=71e2ccf01472a7d04bf4a2a7dd0fcf172c12e48e Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
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IS61NLF51218A-7.5TQLI IS61NLF51218A-7.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58BF65B2E20D5&compId=IS61NLF25636A-7.5TQLI.pdf?ci_sign=8b73ba360cfac005a48e2ec853dbe6d8de6107fa Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
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IS61NLF51218B-7.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58BF65B2F60D5&compId=IS61NLF25636B-7.5TQLI.pdf?ci_sign=da76d4b6cea6164a21ddea2bd1942b3fef099040 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
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IS61NLF51218B-7.5TQLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58B7B1F0B60D5&compId=IS61NLF25636B-7.5TQLI.pdf?ci_sign=0e21089edaac57096e1387fadc5bb0ff8e64e39e Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
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IS61NLP51218A-200TQLI IS61NLP51218A-200TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58DB80E2800D5&compId=IS61NLP25636A-200B3LI.pdf?ci_sign=e6c8a6b5f14baeac515b16bb9f2c712507a49e0b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 200ns
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IS62C10248AL-55TLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B0E0B1D724F4E143&compId=62-65C10248AL.pdf?ci_sign=4c3f67be5a2725f3844f569cae1d5a892bf92ee1 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Operating voltage: 4.5...5.5V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62C1024AL-35QLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AABFF6C0FEF4C143&compId=62-65C1024AL.pdf?ci_sign=0edb0e77221b1f51b6e6629b68d72ca94a1b28b3 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 35ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62C10248AL-55TLI ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B0E1FA4B8E776143&compId=62-65C10248AL.pdf?ci_sign=0b424d101a3eefe92aafd7943e9b108b8ad0e0cc Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Operating voltage: 4.5...5.5V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62C1024AL-35TLI-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8ACA1EC5470C72143&compId=62-65C1024AL.pdf?ci_sign=b63edc5d1ebffc7a2da066ad3efebf74ec5a0938 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 35ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS43TR16K01S2AL-125KBLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A49BAFA23E40D5&compId=IS43TR16K01S2AL-125KBL.pdf?ci_sign=7766dee7c8d30a94597711b762dd242d904da6ed Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
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IS43TR16K01S2AL-125KBL ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A49C22B59860D5&compId=IS43TR16K01S2AL-125KBL.pdf?ci_sign=6d5dcecaf9925e973c35eb805f3362329da71254 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
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IS25WP016D-JBLE IS25WP016D-JBLE ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C3FF90E5A0D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=83e6a454a482834de97683805cd2a8d41a8f21c6 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
на замовлення 465 шт:
термін постачання 21-30 дні (днів)
5+87.48 грн
10+72.80 грн
14+68.97 грн
25+65.14 грн
90+62.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IS25WP016D-JBLA3 IS25WP016D-JBLA3 ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A470E9C23BE0D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=f8bf7b393744ac7ace6fa0eed4a0c12becf51d88 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: in-tray; tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
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IS25WP016D-JBLA3-TR IS25WP016D-JBLA3-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4712EC6BF80D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=ebf334d30ccc83b4f6177b44207f6e8f57972890 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
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IS25WP016D-JBLE-TR IS25WP016D-JBLE-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4712EC6C0C0D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=92a8b232071c4dbbc1e82930a3bbe0c77a0933c3 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
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IS25WP016D-JKLE-TR IS25WP016D-JKLE-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A47187369740D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=1a66670811bc20d524d689adee2c224f5cbcaa23 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
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IS25WP016D-JNLE-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4713796ED00D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=8266dfebf7436a2fe3d4a9ac0c727676398d057e Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
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IS64WV51216EDBLL-10CTLA3-TR ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A599495AA660D5&compId=IS61WV51216EDBLL-10BLI.pdf?ci_sign=9c4327fd309bb9ba546b3622e692ea15069a900d Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS61LPS12836A-200TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A5200EB66740D5&compId=IS61LPS12836A-200TQLI.pdf?ci_sign=ea66e268d82020ff29bf6469fc0c585dfc1d5103
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
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IS61LPS25618A-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A520DD976D20D5&compId=IS61LPS12836A-200TQLI.pdf?ci_sign=efd765363f182c058644aefc4014754783019840
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61LPS25636A-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A5211045E740D5&compId=IS61LPS25636A-200B3LI.pdf?ci_sign=39e6fe3951ea6a73e638d68dd28d969b17f59c87
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61LPS25636A-200TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A52135BA3240D5&compId=IS61LPS25636A-200B3LI.pdf?ci_sign=6957ccb8243633b58c9abbb0d8fd7f392f0b12de
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61LPS25636B-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A52135BA3400D5&compId=IS61LPS25636B-200TQLI.pdf?ci_sign=b59eb222ed925c6d5eb2e964337450a655aab4c1
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61LPS25636B-200TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A52166E2AEC0D5&compId=IS61LPS25636B-200TQLI.pdf?ci_sign=08e24bb3ea17f165fc3388c6a79b7d32d67c8734
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61LPS51218A-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A521EE96EB80D5&compId=IS61LPS25636A-200B3LI.pdf?ci_sign=84ceb25a4ec4baaedf0b8f5e95622d08702b7b27
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 3.1ns
товару немає в наявності
В кошику  од. на суму  грн.
IS61LPS51236B-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A5223658EEE0D5&compId=IS61LPS51236B-200B3LI.pdf?ci_sign=4559715efa50dc0e24fd91e9234260f5b3f51734
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61LPS51236B-200TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A52243762C80D5&compId=IS61LPS51236B-200B3LI.pdf?ci_sign=46097395ba440fabf0f571f5058e8c180448396c
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx36bit
Access time: 3ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 18Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP12836B-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58CB847DDE0D5&compId=IS61NLP12836B-200TQLI.pdf?ci_sign=857a2243a65f642ef28b639d409139cbc4c53da3
IS61NLP12836B-200TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP12836B-200TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58CB847DF20D5&compId=IS61NLP12836B-200TQLI.pdf?ci_sign=c68b49db270dafdcd8d89c8829c40f86b7e33eed
IS61NLP12836B-200TQLI-TR
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP25618A-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D505016E0D5&compId=IS61NLP12836B-200TQLI.pdf?ci_sign=45210fc592563c8d52b0935f046bb3b22901c436
IS61NLP25618A-200TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP25618A-200TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D34F636E0D5&compId=IS61NLP12836B-200TQLI.pdf?ci_sign=3862b19af49e0b996aa0b87786e5c5f0815ca7c4
IS61NLP25618A-200TQLI-TR
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; TQFP100
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP25636A-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58D786591E0D5&compId=IS61NLP25636A-200B3LI.pdf?ci_sign=6310fc3ff03ee4fb86514c05c15d43e6824a6c7d
IS61NLP25636A-200TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; TQFP100
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 200ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP25636B-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58DA807D000D5&compId=IS61NLP25636B-200B3LI.pdf?ci_sign=8247b7266a1c7fc255840dc38dbf310431075c72
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP25636B-200TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58DA807D140D5&compId=IS61NLP25636B-200B3LI.pdf?ci_sign=fbbbf2942293b8732c0e164326b4746788c1ac86
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS62WV51216BLL-55TLI-TR pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B0E0A1CA30074143&compId=62WV51216ALL.pdf?ci_sign=2be4805c644ada4f9318e6866bb103881c0e53eb
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS61QDB42M36A-300M3L pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58EAEA512C0D5&compId=IS61QDB42M36A-300M3L.pdf?ci_sign=712e3b8333a92a158011cae1f07a9704a3a5905f
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS42S86400F-6TL pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4841AB1FD40D5&compId=IS42S16320F-6BL.pdf?ci_sign=e3c6238fe6329fb392da88514677c30ac4a97a8c
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: 0...70°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS42S86400F-6TLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4842A9ACAE0D5&compId=IS42S16320F-6BL.pdf?ci_sign=5beefd0c02451c76ddfa76cfaad8f0474f7dae92
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS42S86400F-6TLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A48444877BA0D5&compId=IS42S16320F-6BL.pdf?ci_sign=064e2c41361c2869338f52897196db3859fa02af
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 6ns
Clock frequency: 167MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS42S86400F-7TL pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A484B9E79820D5&compId=IS42S16320F-6BL.pdf?ci_sign=db914045e807208daea2efdea4d50776eca02812
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: 0...70°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS42S86400F-7TLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4847B647BE0D5&compId=IS42S16320F-6BL.pdf?ci_sign=e23f6866ceab2a06a937ecce9a232caec9b72eb4
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS42S86400F-7TLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A485165DE480D5&compId=IS42S16320F-6BL.pdf?ci_sign=cfc9e4da71df49fc3ed63d4bd27ed96908a7062c
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of memory: SDRAM
Memory organisation: 16Mx8bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS43R86400F-5BLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A492CC693240D5&compId=IS43R16320F-5BL.pdf?ci_sign=3f154616c1201c39d4d1c5feb346c6b9cf81bb37
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS43DR86400E-25DBL pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A48A0D043580D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=a4c4b4bf984e9f255ac9b2dfd8d213996a13d525
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: 0...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS43DR86400E-25DBLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A489D3971060D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=ea712c3dfe2e6e31f84d54659acbf41fce4669f6
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS43DR86400E-3DBL pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A489F5915F20D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=2f29bedf754ea05515a8536393d7149ff2b3858a
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: 0...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS43DR86400E-3DBLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A489F5916060D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=e8dfeabcb197c2fe2ee84d437978a0a055b093f9
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS43DR86400E-3DBLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A48ABB40A3E0D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=c1ea8095a7989d351e553ccb60e5d69bf0ccb66b
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 15ns
Clock frequency: 333MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS43DR86400E-25DBLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A48A8C497B40D5&compId=IS43DR16320E-25DBL.pdf?ci_sign=e4fe13a8c9a47405cfda874c57c316ebf4601b1c
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 1.7...1.9V DC
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику  од. на суму  грн.
IS61LF204836B-7.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C8A675C140D5&compId=IS61LF102436B-7.5TQLI.pdf?ci_sign=75567523521371cc56914e87c421e28f2efab222
IS61LF204836B-7.5TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61VF204836B-7.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A59180E80300D5&compId=IS61VF204836B-7.5TQLI.pdf?ci_sign=5c53476b31f896cc2597586a1b46fdef5d474423
IS61VF204836B-7.5TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP204836B-166TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58CF9144760D5&compId=IS61NLP204836B-166TQLI.pdf?ci_sign=fa873069ca687062ba83afad426cda21b8a2fe2b
IS61NLP204836B-166TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx36bit
Access time: 3.8ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 72Mb SRAM
товару немає в наявності
В кошику  од. на суму  грн.
IS61LF51218A-7.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C90047B800D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=89f5583ae0aa5dd4d86a21163f6d256e83b53d8e
IS61LF51218A-7.5TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
товару немає в наявності
В кошику  од. на суму  грн.
IS61LF51218A-7.5TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C939E649A0D5&compId=IS61LF25636A-7.5TQLI.pdf?ci_sign=3ed667a7b6cf2c6d1037f904a08c2663202a818d
IS61LF51218A-7.5TQLI-TR
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
товару немає в наявності
В кошику  од. на суму  грн.
IS61LF51218B-7.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C939E64AE0D5&compId=IS61LF25636B-7.5TQLI.pdf?ci_sign=582f5ccef7f460c474b985bb9de2fee5f2bacf52
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
товару немає в наявності
В кошику  од. на суму  грн.
IS61LF51218B-7.5TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C939E64C20D5&compId=IS61LF25636B-7.5TQLI.pdf?ci_sign=71e2ccf01472a7d04bf4a2a7dd0fcf172c12e48e
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLF51218A-7.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58BF65B2E20D5&compId=IS61NLF25636A-7.5TQLI.pdf?ci_sign=8b73ba360cfac005a48e2ec853dbe6d8de6107fa
IS61NLF51218A-7.5TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLF51218B-7.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58BF65B2F60D5&compId=IS61NLF25636B-7.5TQLI.pdf?ci_sign=da76d4b6cea6164a21ddea2bd1942b3fef099040
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLF51218B-7.5TQLI-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58B7B1F0B60D5&compId=IS61NLF25636B-7.5TQLI.pdf?ci_sign=0e21089edaac57096e1387fadc5bb0ff8e64e39e
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
товару немає в наявності
В кошику  од. на суму  грн.
IS61NLP51218A-200TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58DB80E2800D5&compId=IS61NLP25636A-200B3LI.pdf?ci_sign=e6c8a6b5f14baeac515b16bb9f2c712507a49e0b
IS61NLP51218A-200TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel
Kind of package: in-tray; tube
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 200ns
товару немає в наявності
В кошику  од. на суму  грн.
IS62C10248AL-55TLI-TR pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B0E0B1D724F4E143&compId=62-65C10248AL.pdf?ci_sign=4c3f67be5a2725f3844f569cae1d5a892bf92ee1
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Operating voltage: 4.5...5.5V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS62C1024AL-35QLI-TR pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AABFF6C0FEF4C143&compId=62-65C1024AL.pdf?ci_sign=0edb0e77221b1f51b6e6629b68d72ca94a1b28b3
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; SO32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 35ns
Case: SO32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS62C10248AL-55TLI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B0E1FA4B8E776143&compId=62-65C10248AL.pdf?ci_sign=0b424d101a3eefe92aafd7943e9b108b8ad0e0cc
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 4.5÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Operating voltage: 4.5...5.5V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS62C1024AL-35TLI-TR pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8ACA1EC5470C72143&compId=62-65C1024AL.pdf?ci_sign=b63edc5d1ebffc7a2da066ad3efebf74ec5a0938
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 35ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IS43TR16K01S2AL-125KBLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A49BAFA23E40D5&compId=IS43TR16K01S2AL-125KBL.pdf?ci_sign=7766dee7c8d30a94597711b762dd242d904da6ed
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
товару немає в наявності
В кошику  од. на суму  грн.
IS43TR16K01S2AL-125KBL pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A49C22B59860D5&compId=IS43TR16K01S2AL-125KBL.pdf?ci_sign=6d5dcecaf9925e973c35eb805f3362329da71254
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
товару немає в наявності
В кошику  од. на суму  грн.
IS25WP016D-JBLE pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C3FF90E5A0D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=83e6a454a482834de97683805cd2a8d41a8f21c6
IS25WP016D-JBLE
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
на замовлення 465 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+87.48 грн
10+72.80 грн
14+68.97 грн
25+65.14 грн
90+62.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IS25WP016D-JBLA3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A470E9C23BE0D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=f8bf7b393744ac7ace6fa0eed4a0c12becf51d88
IS25WP016D-JBLA3
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: in-tray; tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
товару немає в наявності
В кошику  од. на суму  грн.
IS25WP016D-JBLA3-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4712EC6BF80D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=ebf334d30ccc83b4f6177b44207f6e8f57972890
IS25WP016D-JBLA3-TR
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
товару немає в наявності
В кошику  од. на суму  грн.
IS25WP016D-JBLE-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4712EC6C0C0D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=92a8b232071c4dbbc1e82930a3bbe0c77a0933c3
IS25WP016D-JBLE-TR
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
товару немає в наявності
В кошику  од. на суму  грн.
IS25WP016D-JKLE-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A47187369740D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=1a66670811bc20d524d689adee2c224f5cbcaa23
IS25WP016D-JKLE-TR
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
товару немає в наявності
В кошику  од. на суму  грн.
IS25WP016D-JNLE-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4713796ED00D5&compId=IS25LP016D-JBLA3.pdf?ci_sign=8266dfebf7436a2fe3d4a9ac0c727676398d057e
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
товару немає в наявності
В кошику  од. на суму  грн.
IS64WV51216EDBLL-10CTLA3-TR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A599495AA660D5&compId=IS61WV51216EDBLL-10BLI.pdf?ci_sign=9c4327fd309bb9ba546b3622e692ea15069a900d
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
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