| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IS61WV51216BLL-10TLI | ISSI |
SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 10ns 44-Pin TSOP-II |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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IS61WV5128BLL-10TLI | ISSI |
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 44-Pin TSOP-II |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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IS61WV5128BLL-10TLI | ISSI |
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 44-Pin TSOP-II |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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IS61NLP51218A-200TQLI | ISSI |
SRAM Chip Sync Dual 3.3V 9M-bit 512K x 18 3.1ns 100-Pin TQFP |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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IS61NLP51218A-200TQLI | ISSI |
SRAM Chip Sync Dual 3.3V 9M-bit 512K x 18 3.1ns 100-Pin TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS61LF25636A-7.5TQLI | ISSI |
SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns 100-Pin TQFP |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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IS61LF25636A-7.5TQLI | ISSI |
SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns 100-Pin TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS61LF25636A-7.5TQLI | ISSI |
SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns 100-Pin TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS61WV6416BLL-12TLI | ISSI |
SRAM Chip Async Single 3.3V 1M-bit 64K x 16 12ns 44-Pin TSOP-II |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
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IS61WV6416DBLL-10TLI-TR | ISSI |
SRAM Chip Async Single 2.5V/3.3V 1M-bit 64K x 16 10ns 44-Pin TSOP-II T/R |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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IS61WV6416DBLL-10TLI-TR | ISSI |
SRAM Chip Async Single 2.5V/3.3V 1M-bit 64K x 16 10ns 44-Pin TSOP-II T/R |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS61WV20488FBLL-10TLI | ISSI |
SRAM Chip Async Single 2.5V/3.3V 16M-bit 2M x 8 10ns 44-Pin TSOP-II |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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IS61WV5128FBLL-10TLI | ISSI |
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 44-Pin TSOP-II |
на замовлення 270 шт: термін постачання 21-31 дні (днів) |
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IS61C25616AL-10KLI-TR | ISSI |
SRAM Chip Async Single 5V 4M-bit 256K x 16 10ns 44-Pin SOJ T/R |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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IS61C6416AL-12KLI | ISSI |
SRAM Chip Async Single 5V 1M-bit 64K x 16 12ns 44-Pin SOJ |
на замовлення 1546 шт: термін постачання 21-31 дні (днів) |
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IS61LV5128AL-10KLI | ISSI |
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ |
на замовлення 3002 шт: термін постачання 21-31 дні (днів) |
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IS61LV25616AL-10TLI | ISSI |
SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II |
на замовлення 810 шт: термін постачання 21-31 дні (днів) |
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IS61C5128AL-10KLI-TR | ISSI |
SRAM Chip Async Single 5V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R |
на замовлення 6250 шт: термін постачання 21-31 дні (днів) |
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IS61C6416AL-12KLI-TR | ISSI |
SRAM Chip Async Single 5V 1M-bit 64K x 16 12ns 44-Pin SOJ T/R |
на замовлення 2242 шт: термін постачання 21-31 дні (днів) |
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IS61LV5128AL-10KLI-TR | ISSI |
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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IS61WV5128BLL-10KLI-TR | ISSI |
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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IS61C25616AL-10KLI | ISSI |
SRAM Chip Async Single 5V 4M-bit 256K x 16 10ns 44-Pin SOJ |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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IS61C256AL-12JLI | ISSI |
SRAM Chip Async Single 5V 256K-bit 32K x 8 12ns 28-Pin SOJ |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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IS61WV25616BLL-10TLI | ISSI |
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II |
на замовлення 992 шт: термін постачання 21-31 дні (днів) |
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IS25LP032D-JBLA3 | ISSI |
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 32M-bit 4M x 8 8ns 8-Pin SOIC Automotive AEC-Q100 |
на замовлення 741 шт: термін постачання 21-31 дні (днів) |
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| IS66WVR8M8FBLL-104NLI-TR | ISSI |
IS66WVR8M8FBLL-104NLI-TR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61LPS51218B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61LPS51218B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61NLP51218B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61NLP51218B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61NLP102418B-200B3L | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: 0...70°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61NLP102418B-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61NLP102418B-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61NLP102418B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61NLP102418B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS61NLP204818B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel Kind of interface: parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IS61NVP204818B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel Kind of interface: parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 2.5V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IS61WV25616BLS-25TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Mounting: SMD Case: TSOP44 II Kind of interface: parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 25ns Operating voltage: 2.4...3.6V Memory: 4Mb SRAM Memory organisation: 256kx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS61WV25616BLS-25TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Mounting: SMD Case: TSOP44 II Kind of interface: parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 25ns Operating voltage: 2.4...3.6V Memory: 4Mb SRAM Memory organisation: 256kx16bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS42S16400J-5TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube Clock frequency: 200MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 1Mx16bitx4 Kind of interface: parallel Mounting: SMD Access time: 5ns |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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IS42S16400J-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C Clock frequency: 166MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 4Mx16bit Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
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IS42S16400J-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube Clock frequency: 166MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: -40...85°C Part status: Not recommended for new designs Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 4Mx16bit Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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IS42S16400J-7TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C Clock frequency: 143MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: tube Memory organisation: 4Mx16bit Kind of interface: parallel Mounting: SMD Access time: 7ns |
на замовлення 253 шт: термін постачання 14-30 дні (днів) |
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IS25LP128-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 248 шт: термін постачання 14-30 дні (днів) |
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IS25LP016D-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 174 шт: термін постачання 14-30 дні (днів) |
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IS25LQ512B-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512kb FLASH Interface: SPI Operating frequency: 104MHz Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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IS25WP080D-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm |
на замовлення 51 шт: термін постачання 14-30 дні (днів) |
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IS42S16100H-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Case: TSOP50 II Mounting: SMD Kind of package: tube Type of integrated circuit: DRAM memory Kind of interface: parallel Kind of memory: SDRAM Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 16Mb DRAM Clock frequency: 143MHz Memory organisation: 512kx16bitx2 |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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IS42S32200L-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Clock frequency: 166MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 171 шт: термін постачання 14-30 дні (днів) |
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IS42S32400F-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube Clock frequency: 166MHz Memory: 128Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 4Mx32bit Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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IS42S32200L-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Clock frequency: 143MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: -40...85°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 7ns |
на замовлення 51 шт: термін постачання 14-30 дні (днів) |
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IS42S16800F-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Clock frequency: 166MHz Memory: 128Mb DRAM Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II Kind of package: in-tray; tube Memory organisation: 2Mx16bitx4 Kind of interface: parallel Mounting: SMD Access time: 6ns |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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| IS43TR82560D-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 2Gb DRAM Memory organisation: 256Mx8bit Clock frequency: 1.066GHz Access time: 13.75ns Case: TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS43TR82560D-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 2Gb DRAM Memory organisation: 256Mx8bit Clock frequency: 1.066GHz Access time: 13.75ns Case: TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS43TR82560DL-125KBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 2Gb DRAM Memory organisation: 256Mx8bit Clock frequency: 1.066GHz Access time: 13.75ns Case: TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IS43TR82560DL-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 2Gb DRAM Memory organisation: 256Mx8bit Clock frequency: 1.066GHz Access time: 13.75ns Case: TWBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.35V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IS25LP064A-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 220 шт: термін постачання 14-30 дні (днів) |
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IS25LP080D-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 1245 шт: термін постачання 14-30 дні (днів) |
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IS25LP080D-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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IS25WP080D-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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| IS61WV51216BLL-10TLI |
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Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 10ns 44-Pin TSOP-II
SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 10ns 44-Pin TSOP-II
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 1337.84 грн |
| 11+ | 1242.98 грн |
| IS61WV5128BLL-10TLI |
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Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 44-Pin TSOP-II
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 44-Pin TSOP-II
на замовлення 125 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 572.35 грн |
| IS61WV5128BLL-10TLI |
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Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 44-Pin TSOP-II
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 44-Pin TSOP-II
на замовлення 235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 289.16 грн |
| IS61NLP51218A-200TQLI |
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Виробник: ISSI
SRAM Chip Sync Dual 3.3V 9M-bit 512K x 18 3.1ns 100-Pin TQFP
SRAM Chip Sync Dual 3.3V 9M-bit 512K x 18 3.1ns 100-Pin TQFP
на замовлення 72 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 213.79 грн |
| IS61NLP51218A-200TQLI |
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Виробник: ISSI
SRAM Chip Sync Dual 3.3V 9M-bit 512K x 18 3.1ns 100-Pin TQFP
SRAM Chip Sync Dual 3.3V 9M-bit 512K x 18 3.1ns 100-Pin TQFP
товару немає в наявності
В кошику
од. на суму грн.
| IS61LF25636A-7.5TQLI |
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Виробник: ISSI
SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns 100-Pin TQFP
SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns 100-Pin TQFP
на замовлення 72 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 213.79 грн |
| IS61LF25636A-7.5TQLI |
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Виробник: ISSI
SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns 100-Pin TQFP
SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns 100-Pin TQFP
товару немає в наявності
В кошику
од. на суму грн.
| IS61LF25636A-7.5TQLI |
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Виробник: ISSI
SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns 100-Pin TQFP
SRAM Chip Sync Quad 3.3V 9M-bit 256K x 36 7.5ns 100-Pin TQFP
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV6416BLL-12TLI |
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Виробник: ISSI
SRAM Chip Async Single 3.3V 1M-bit 64K x 16 12ns 44-Pin TSOP-II
SRAM Chip Async Single 3.3V 1M-bit 64K x 16 12ns 44-Pin TSOP-II
на замовлення 135 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 135+ | 131.43 грн |
| IS61WV6416DBLL-10TLI-TR |
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Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 1M-bit 64K x 16 10ns 44-Pin TSOP-II T/R
SRAM Chip Async Single 2.5V/3.3V 1M-bit 64K x 16 10ns 44-Pin TSOP-II T/R
на замовлення 995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 995+ | 293.16 грн |
| IS61WV6416DBLL-10TLI-TR |
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Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 1M-bit 64K x 16 10ns 44-Pin TSOP-II T/R
SRAM Chip Async Single 2.5V/3.3V 1M-bit 64K x 16 10ns 44-Pin TSOP-II T/R
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV20488FBLL-10TLI |
![]() |
Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 16M-bit 2M x 8 10ns 44-Pin TSOP-II
SRAM Chip Async Single 2.5V/3.3V 16M-bit 2M x 8 10ns 44-Pin TSOP-II
на замовлення 8 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IS61WV5128FBLL-10TLI |
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Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 44-Pin TSOP-II
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 44-Pin TSOP-II
на замовлення 270 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 135+ | 224.05 грн |
| IS61C25616AL-10KLI-TR |
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Виробник: ISSI
SRAM Chip Async Single 5V 4M-bit 256K x 16 10ns 44-Pin SOJ T/R
SRAM Chip Async Single 5V 4M-bit 256K x 16 10ns 44-Pin SOJ T/R
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 556.25 грн |
| 100+ | 528.22 грн |
| 500+ | 500.19 грн |
| IS61C6416AL-12KLI |
![]() |
Виробник: ISSI
SRAM Chip Async Single 5V 1M-bit 64K x 16 12ns 44-Pin SOJ
SRAM Chip Async Single 5V 1M-bit 64K x 16 12ns 44-Pin SOJ
на замовлення 1546 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 250.10 грн |
| 500+ | 237.16 грн |
| 1000+ | 223.15 грн |
| IS61LV5128AL-10KLI | ![]() |
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Виробник: ISSI
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ
на замовлення 3002 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 544.39 грн |
| 100+ | 517.44 грн |
| 500+ | 490.49 грн |
| 1000+ | 445.95 грн |
| IS61LV25616AL-10TLI |
![]() |
Виробник: ISSI
SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II
SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II
на замовлення 810 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 135+ | 670.07 грн |
| IS61C5128AL-10KLI-TR |
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Виробник: ISSI
SRAM Chip Async Single 5V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R
SRAM Chip Async Single 5V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R
на замовлення 6250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 515.28 грн |
| 100+ | 489.41 грн |
| 500+ | 463.54 грн |
| 1000+ | 422.04 грн |
| IS61C6416AL-12KLI-TR |
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Виробник: ISSI
SRAM Chip Async Single 5V 1M-bit 64K x 16 12ns 44-Pin SOJ T/R
SRAM Chip Async Single 5V 1M-bit 64K x 16 12ns 44-Pin SOJ T/R
на замовлення 2242 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 250.10 грн |
| 500+ | 237.16 грн |
| 1000+ | 223.15 грн |
| IS61LV5128AL-10KLI-TR |
![]() |
Виробник: ISSI
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 551.94 грн |
| 100+ | 523.91 грн |
| 500+ | 496.96 грн |
| 1000+ | 452.18 грн |
| IS61WV5128BLL-10KLI-TR |
![]() |
Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R
SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ T/R
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 67+ | 485.10 грн |
| 100+ | 461.38 грн |
| 500+ | 436.59 грн |
| 1000+ | 398.13 грн |
| IS61C25616AL-10KLI |
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Виробник: ISSI
SRAM Chip Async Single 5V 4M-bit 256K x 16 10ns 44-Pin SOJ
SRAM Chip Async Single 5V 4M-bit 256K x 16 10ns 44-Pin SOJ
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 546.55 грн |
| 100+ | 519.60 грн |
| 500+ | 491.57 грн |
| 1000+ | 448.02 грн |
| IS61C256AL-12JLI |
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Виробник: ISSI
SRAM Chip Async Single 5V 256K-bit 32K x 8 12ns 28-Pin SOJ
SRAM Chip Async Single 5V 256K-bit 32K x 8 12ns 28-Pin SOJ
на замовлення 750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 187+ | 173.56 грн |
| 500+ | 156.31 грн |
| IS61WV25616BLL-10TLI |
![]() |
Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II
на замовлення 992 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 572.35 грн |
| IS25LP032D-JBLA3 |
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Виробник: ISSI
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 32M-bit 4M x 8 8ns 8-Pin SOIC Automotive AEC-Q100
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 32M-bit 4M x 8 8ns 8-Pin SOIC Automotive AEC-Q100
на замовлення 741 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 97+ | 133.76 грн |
| 114+ | 114.26 грн |
| 124+ | 104.38 грн |
| 133+ | 93.89 грн |
| 500+ | 82.99 грн |
| IS66WVR8M8FBLL-104NLI-TR |
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Виробник: ISSI
IS66WVR8M8FBLL-104NLI-TR
IS66WVR8M8FBLL-104NLI-TR
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPS51218B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPS51218B-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP51218B-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP51218B-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200B3L |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200B3LI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200B3LI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200TQLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP102418B-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61NLP204818B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
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| IS61NVP204818B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 2.5V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 2.5V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
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| IS61WV25616BLS-25TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Case: TSOP44 II
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Case: TSOP44 II
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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| IS61WV25616BLS-25TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Case: TSOP44 II
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Mounting: SMD
Case: TSOP44 II
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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| IS42S16400J-5TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Clock frequency: 200MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 1Mx16bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Clock frequency: 200MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 1Mx16bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 5ns
на замовлення 38 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 314.34 грн |
| 5+ | 262.45 грн |
| 25+ | 218.71 грн |
| IS42S16400J-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 55 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 248.21 грн |
| 5+ | 202.72 грн |
| 25+ | 180.01 грн |
| IS42S16400J-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Part status: Not recommended for new designs
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Part status: Not recommended for new designs
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 2 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.47 грн |
| IS42S16400J-7TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: tube
Memory organisation: 4Mx16bit
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
на замовлення 253 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 192.95 грн |
| 5+ | 172.44 грн |
| 25+ | 165.71 грн |
| 108+ | 158.14 грн |
| IS25LP128-JBLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 248 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 209.26 грн |
| IS25LP016D-JNLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 174 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.60 грн |
| 10+ | 50.81 грн |
| 25+ | 46.60 грн |
| 50+ | 43.66 грн |
| 100+ | 41.22 грн |
| IS25LQ512B-JKLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512kb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
на замовлення 6 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.19 грн |
| IS25WP080D-JKLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
на замовлення 51 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 85.15 грн |
| IS42S16100H-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Case: TSOP50 II
Mounting: SMD
Kind of package: tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 16Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Case: TSOP50 II
Mounting: SMD
Kind of package: tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 16Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx16bitx2
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 163.06 грн |
| IS42S32200L-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 171 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 358.73 грн |
| 3+ | 312.92 грн |
| 10+ | 277.59 грн |
| 25+ | 252.35 грн |
| IS42S32400F-6TL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 4Mx32bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 4Mx32bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 16 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 433.92 грн |
| 5+ | 363.39 грн |
| IS42S32200L-7TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
на замовлення 51 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 344.24 грн |
| IS42S16800F-6TLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: in-tray; tube
Memory organisation: 2Mx16bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Kind of package: in-tray; tube
Memory organisation: 2Mx16bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 354.20 грн |
| 5+ | 288.52 грн |
| IS43TR82560D-125KBLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 2Gb DRAM
Memory organisation: 256Mx8bit
Clock frequency: 1.066GHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 2Gb DRAM
Memory organisation: 256Mx8bit
Clock frequency: 1.066GHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.5V DC
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| IS43TR82560D-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 2Gb DRAM
Memory organisation: 256Mx8bit
Clock frequency: 1.066GHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 2Gb DRAM
Memory organisation: 256Mx8bit
Clock frequency: 1.066GHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.5V DC
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| IS43TR82560DL-125KBLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 256Mx8bit
Clock frequency: 1.066GHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 256Mx8bit
Clock frequency: 1.066GHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
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од. на суму грн.
| IS43TR82560DL-125KBLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 256Mx8bit
Clock frequency: 1.066GHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 256Mx8bit; 1066MHz; 13.75ns; TWBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 256Mx8bit
Clock frequency: 1.066GHz
Access time: 13.75ns
Case: TWBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.35V DC
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од. на суму грн.
| IS25LP064A-JBLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QPI,SPI; 133MHz; 2.3÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 220 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.29 грн |
| IS25LP080D-JNLE |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 1245 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 70.66 грн |
| 25+ | 63.09 грн |
| 100+ | 55.52 грн |
| IS25LP080D-JBLE |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 67 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.07 грн |
| IS25WP080D-JNLE |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 150 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.26 грн |

























