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JANTXV1N3600 JANTXV1N3600 Microchip Technology 5796-1n3600-datasheet Description: DIODE 50V 200MA DO7
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/231
товар відсутній
JANTXV1N5712UBCC JANTXV1N5712UBCC Microchip Technology 131889-lds-0040-2-datasheet Description: DIODE ARRAY SCHOTTKY 16V 75MA UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 16 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
Qualification: MIL-PRF-19500/444
товар відсутній
JANTXV1N6330 Microchip Technology 10924-lds-0193-datasheet Description: DIODE ZENER
товар відсутній
JANTXV1N6639US Microchip Technology 5897-1n6639-40-41us-datasheet Description: SWITCHING DIODE
товар відсутній
Jantxv2N5416 Jantxv2N5416 Microchip Technology 132282-lds-0305-datasheet Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
товар відсутній
Jantxv2N6284 Microchip Technology 132512-lds-0308-datasheet Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Qualification: MIL-PRF-19500/504
товар відсутній
JANTXV2N6676 Microchip Technology 6134-2n6676-datasheet Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/538
товар відсутній
1N1183 Microchip Technology 8540-coe-18-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
1N1183R Microchip Technology 8540-coe-18-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
1N1189 Microchip Technology 8540-coe-18-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товар відсутній
1N1190 Microchip Technology 8540-coe-18-datasheet Description: STANDARD RECTIFIER
товар відсутній
1N1190R Microchip Technology 8540-coe-18-datasheet Description: STANDARD RECTIFIER
товар відсутній
1N3891R 1N3891R Microchip Technology 8956-lds-0143-datasheet Description: FAST RECOVERY RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 38 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
1N5261B 1N5261B Microchip Technology 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
товар відсутній
2N3724 2N3724 Microchip Technology 2N3,2N4,FTSO%20Type.pdf Description: NPN POWER SILICON TRANSISTOR
товар відсутній
2N4237 2N4237 Microchip Technology 6074-2n4237-datasheet Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товар відсутній
2N697 Microchip Technology 6136-2n696-datasheet Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товар відсутній
2N6987U Microchip Technology 6137-2n6987-datasheet Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C
Power - Max: 1W
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC (8.89x8.89)
товар відсутній
1N5913B Microchip Technology 10922-sa5-57-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товар відсутній
1N5924B 1N5924B Microchip Technology 10922-sa5-57-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 7 V
товар відсутній
1N5953B Microchip Technology 10922-sa5-57-datasheet Description: DIODE ZENER
товар відсутній
2N5302 2N5302 Microchip Technology 6088-2n5302-datasheet Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
товар відсутній
2N5885 2N5885 Microchip Technology Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
товар відсутній
2N5886 2N5886 Microchip Technology Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
товар відсутній
2N6286 2N6286 Microchip Technology 6116-2n6286-87-datasheet Description: TRANS PNP DARL 80V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
товар відсутній
2N5416 2N5416 Microchip Technology 132282-lds-0305-datasheet Description: PNP TRANSISTORS
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
1+1091.95 грн
1N4462US 1N4462US Microchip Technology 124793-lds-0183-1-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
товар відсутній
1N4467US 1N4467US Microchip Technology 124793-lds-0183-1-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
товар відсутній
1N4475US 1N4475US Microchip Technology 124793-lds-0183-1-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 21.6 V
товар відсутній
1N4487US 1N4487US Microchip Technology 124793-lds-0183-1-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: D-5A
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 65.6 V
товар відсутній
1N4488US 1N4488US Microchip Technology 124793-lds-0183-1-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V
товар відсутній
1N4494US 1N4494US Microchip Technology 124793-lds-0183-1-datasheet Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
товар відсутній
1N6123 Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE
товар відсутній
1N6638US 1N6638US Microchip Technology 5895-1n6638-42-43us-datasheet Description: DIODE GEN PURP 125V 300MA D-5D
Packaging: Bulk
Package / Case: SQ-MELF, D
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 125 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
1+474.17 грн
100+ 424.41 грн
1N1199B 1N1199B Microchip Technology 8545-coe-3-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
1N1200B 1N1200B Microchip Technology 8545-coe-3-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
1N1204B 1N1204B Microchip Technology 8545-coe-3-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
1N1183AR Microchip Technology 8540-coe-18-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
1N1184AR Microchip Technology 8540-coe-18-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
1N5833 Microchip Technology 5868-1n5832-34-datasheet Description: DIODE SCHOTTKY 30V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 30 V
товар відсутній
1N5834 Microchip Technology 5868-1n5832-34-datasheet Description: 5A SCHOTTKY RECTIFIER
товар відсутній
2N2218A 2N2218A Microchip Technology 8917-lds-0091-datasheet Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
товар відсутній
2N5878 2N5878 Microchip Technology Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
товар відсутній
2N918 Microchip Technology 8811-lds-0010-datasheet Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
Supplier Device Package: TO-72
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
товар відсутній
APTGLQ200H65G Microchip Technology 136242-aptglq200h65g-datasheet Description: IGBT MODULE 650V 270A 680W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V
товар відсутній
APTGLQ300SK120G Microchip Technology 136244-aptglq300sk120g-datasheet Description: IGBT MODULE 1200V 500A 1500W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 17.6 nF @ 25 V
товар відсутній
APTGLQ50DDA65T3G Microchip Technology 136230-aptglq50dda65t3g-datasheet Description: IGBT MODULE 650V 70A 175W
товар відсутній
APTGLQ50TL65T3G Microchip Technology 136233-aptglq50tl65t3g-datasheet Description: IGBT MODULE 650V 70A 175W SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3F
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
товар відсутній
APTGLQ50VDA65T3G Microchip Technology 136234-aptglq50vda65t3g-datasheet Description: IGBT MODULE 650V 70A 175W SP3F
товар відсутній
APTGTQ200A65T3G Microchip Technology 135989-aptgtq200a65t3g-datasheet Description: IGBT MODULE 650V 200A 483W SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3F
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 483 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
товар відсутній
APTGTQ200DA65T3G Microchip Technology 135990-aptgtq200da65t3g-datasheet Description: IGBT MODULE 650V 200A 483W SP3F
товар відсутній
APTGTQ200SK65T3G Microchip Technology 135991-aptgtq200sk65t3g-datasheet Description: IGBT MODULE 650V 200A 483W SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3F
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 483 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
товар відсутній
PD69204T4ILQ-TR PD69204T4ILQ-TR Microchip Technology 136500-pd69204t4-datasheet Description: IC POE CNTRL 4 CHANNEL 56QFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
PD69208MILQ-TR PD69208MILQ-TR Microchip Technology 136498-pd69208m-and-pd69200-datasheet Description: IC POE CNTRL 8 CHANNEL 56QFN
товар відсутній
PD69208T4ILQ-TR PD69208T4ILQ-TR Microchip Technology Description: IC POE CNTRL 8 CHANNEL 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PSE)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 32V ~ 57V
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE)
Supplier Device Package: 56-QFN (8x8)
Auxiliary Sense: Yes
Part Status: Obsolete
Number of Channels: 8
Power - Max: 95 W
товар відсутній
VSC7223XJV Microchip Technology download.php?fid=5010&number=vsc7223 Description: MULTIRATE 16 GBPS QUAD RETIMER/R
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
VSC7438YIH-02 Microchip Technology VMDS-10497_VSC7438-02_VSC7464-02_VSC7468-02.pdf Description: IC TELECOM INTERFACE
Packaging: Tray
Package / Case: 672-BGA, FCBGA
Mounting Type: Surface Mount
Function: Ethernet Switch
Interface: Ethernet
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 672-FCBGA (27x27)
Number of Circuits: 1
товар відсутній
VSC7464YIH-02 VSC7464YIH-02 Microchip Technology filehandler.aspx?ddocname=en609809 Description: IC TELECOM INTERFACE
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
VSC8522XJQ-04 VSC8522XJQ-04 Microchip Technology filehandler.aspx?ddocname=en950033 Description: IC TELECOM INTERFACE 302TQFP
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
ZL79124GDG2 Microchip Technology Description: IC AUDIO PROCESSOR 144BGA
Packaging: Bulk
Package / Case: 144-BGA
Mounting Type: Surface Mount
Function: Audio Processor
Supplier Device Package: 144-BGA
Part Status: Active
товар відсутній
JANTXV1N3600 5796-1n3600-datasheet
JANTXV1N3600
Виробник: Microchip Technology
Description: DIODE 50V 200MA DO7
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/231
товар відсутній
JANTXV1N5712UBCC 131889-lds-0040-2-datasheet
JANTXV1N5712UBCC
Виробник: Microchip Technology
Description: DIODE ARRAY SCHOTTKY 16V 75MA UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 16 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
Qualification: MIL-PRF-19500/444
товар відсутній
JANTXV1N6330 10924-lds-0193-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
товар відсутній
JANTXV1N6639US 5897-1n6639-40-41us-datasheet
Виробник: Microchip Technology
Description: SWITCHING DIODE
товар відсутній
Jantxv2N5416 132282-lds-0305-datasheet
Jantxv2N5416
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
товар відсутній
Jantxv2N6284 132512-lds-0308-datasheet
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Qualification: MIL-PRF-19500/504
товар відсутній
JANTXV2N6676 6134-2n6676-datasheet
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Supplier Device Package: TO-204AD (TO-3)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/538
товар відсутній
1N1183 8540-coe-18-datasheet
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
1N1183R 8540-coe-18-datasheet
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
1N1189 8540-coe-18-datasheet
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товар відсутній
1N1190 8540-coe-18-datasheet
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
товар відсутній
1N1190R 8540-coe-18-datasheet
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
товар відсутній
1N3891R 8956-lds-0143-datasheet
1N3891R
Виробник: Microchip Technology
Description: FAST RECOVERY RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 38 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
1N5261B 1N5221 - 1N5281B, e3 DO-35.pdf
1N5261B
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
товар відсутній
2N3724 2N3,2N4,FTSO%20Type.pdf
2N3724
Виробник: Microchip Technology
Description: NPN POWER SILICON TRANSISTOR
товар відсутній
2N4237 6074-2n4237-datasheet
2N4237
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товар відсутній
2N697 6136-2n696-datasheet
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
товар відсутній
2N6987U 6137-2n6987-datasheet
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C
Power - Max: 1W
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC (8.89x8.89)
товар відсутній
1N5913B 10922-sa5-57-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товар відсутній
1N5924B 10922-sa5-57-datasheet
1N5924B
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 7 V
товар відсутній
1N5953B 10922-sa5-57-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER
товар відсутній
2N5302 6088-2n5302-datasheet
2N5302
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
товар відсутній
2N5885
2N5885
Виробник: Microchip Technology
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
товар відсутній
2N5886
2N5886
Виробник: Microchip Technology
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
товар відсутній
2N6286 6116-2n6286-87-datasheet
2N6286
Виробник: Microchip Technology
Description: TRANS PNP DARL 80V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
товар відсутній
2N5416 132282-lds-0305-datasheet
2N5416
Виробник: Microchip Technology
Description: PNP TRANSISTORS
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1091.95 грн
1N4462US 124793-lds-0183-1-datasheet
1N4462US
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
товар відсутній
1N4467US 124793-lds-0183-1-datasheet
1N4467US
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
товар відсутній
1N4475US 124793-lds-0183-1-datasheet
1N4475US
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 21.6 V
товар відсутній
1N4487US 124793-lds-0183-1-datasheet
1N4487US
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: D-5A
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 65.6 V
товар відсутній
1N4488US 124793-lds-0183-1-datasheet
1N4488US
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V
товар відсутній
1N4494US 124793-lds-0183-1-datasheet
1N4494US
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: A, SQ-MELF
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
товар відсутній
1N6123 127891-lds-0277-datasheet
Виробник: Microchip Technology
Description: TVS DIODE
товар відсутній
1N6638US 5895-1n6638-42-43us-datasheet
1N6638US
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 300MA D-5D
Packaging: Bulk
Package / Case: SQ-MELF, D
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 125 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+474.17 грн
100+ 424.41 грн
1N1199B 8545-coe-3-datasheet
1N1199B
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
1N1200B 8545-coe-3-datasheet
1N1200B
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
1N1204B 8545-coe-3-datasheet
1N1204B
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
1N1183AR 8540-coe-18-datasheet
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
1N1184AR 8540-coe-18-datasheet
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
1N5833 5868-1n5832-34-datasheet
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 30V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 30 V
товар відсутній
1N5834 5868-1n5832-34-datasheet
Виробник: Microchip Technology
Description: 5A SCHOTTKY RECTIFIER
товар відсутній
2N2218A 8917-lds-0091-datasheet
2N2218A
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
товар відсутній
2N5878
2N5878
Виробник: Microchip Technology
Description: PNP POWER TRANSISTOR SILICON AMP
Packaging: Bulk
товар відсутній
2N918 8811-lds-0010-datasheet
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
Supplier Device Package: TO-72
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
товар відсутній
APTGLQ200H65G 136242-aptglq200h65g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 650V 270A 680W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V
товар відсутній
APTGLQ300SK120G 136244-aptglq300sk120g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 500A 1500W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 17.6 nF @ 25 V
товар відсутній
APTGLQ50DDA65T3G 136230-aptglq50dda65t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 650V 70A 175W
товар відсутній
APTGLQ50TL65T3G 136233-aptglq50tl65t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 650V 70A 175W SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3F
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
товар відсутній
APTGLQ50VDA65T3G 136234-aptglq50vda65t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 650V 70A 175W SP3F
товар відсутній
APTGTQ200A65T3G 135989-aptgtq200a65t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 650V 200A 483W SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3F
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 483 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
товар відсутній
APTGTQ200DA65T3G 135990-aptgtq200da65t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 650V 200A 483W SP3F
товар відсутній
APTGTQ200SK65T3G 135991-aptgtq200sk65t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 650V 200A 483W SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3F
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 483 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
товар відсутній
PD69204T4ILQ-TR 136500-pd69204t4-datasheet
PD69204T4ILQ-TR
Виробник: Microchip Technology
Description: IC POE CNTRL 4 CHANNEL 56QFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
PD69208MILQ-TR 136498-pd69208m-and-pd69200-datasheet
PD69208MILQ-TR
Виробник: Microchip Technology
Description: IC POE CNTRL 8 CHANNEL 56QFN
товар відсутній
PD69208T4ILQ-TR
PD69208T4ILQ-TR
Виробник: Microchip Technology
Description: IC POE CNTRL 8 CHANNEL 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PSE)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 32V ~ 57V
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE)
Supplier Device Package: 56-QFN (8x8)
Auxiliary Sense: Yes
Part Status: Obsolete
Number of Channels: 8
Power - Max: 95 W
товар відсутній
VSC7223XJV download.php?fid=5010&number=vsc7223
Виробник: Microchip Technology
Description: MULTIRATE 16 GBPS QUAD RETIMER/R
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
VSC7438YIH-02 VMDS-10497_VSC7438-02_VSC7464-02_VSC7468-02.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE
Packaging: Tray
Package / Case: 672-BGA, FCBGA
Mounting Type: Surface Mount
Function: Ethernet Switch
Interface: Ethernet
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 672-FCBGA (27x27)
Number of Circuits: 1
товар відсутній
VSC7464YIH-02 filehandler.aspx?ddocname=en609809
VSC7464YIH-02
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
VSC8522XJQ-04 filehandler.aspx?ddocname=en950033
VSC8522XJQ-04
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 302TQFP
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
ZL79124GDG2
Виробник: Microchip Technology
Description: IC AUDIO PROCESSOR 144BGA
Packaging: Bulk
Package / Case: 144-BGA
Mounting Type: Surface Mount
Function: Audio Processor
Supplier Device Package: 144-BGA
Part Status: Active
товар відсутній
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