Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11521) > Сторінка 170 з 193
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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|---|---|---|---|---|---|---|---|
| APTGF50A120TG | Microsemi Corporation |
 Description: IGBT MODULE 1200V 75A 312W SP4 |
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| APTGF50TDU120PG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
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APTGF50DDA120T3G | Microsemi Corporation |
Description: IGBT MODULE 1200V 70A 312W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Boost Chopper Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
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| APTGF50TA120PG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: NPT Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
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| APTGF50SK120T1G | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP1 |
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| APTGF50DA120CT1G | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP1 |
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MXLPLAD6.5KP54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MAPLAD6.5KP54Ae3 | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD |
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MXPLAD6.5KP54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXPLAD6.5KP54Ae3 | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MAPLAD6.5KP54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD |
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MPLAD6.5KP54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD |
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| MPLAD7.5KP54AE3 | Microsemi Corporation |
Description: TVS DIODE |
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| MXLPLAD7.5KP54A | Microsemi Corporation |
Description: TVS DIODE |
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| MAPLAD7.5KP54AE3 | Microsemi Corporation |
Description: TVS DIODE |
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| MPLAD7.5KP54A | Microsemi Corporation |
Description: TVS DIODE |
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| MAPLAD7.5KP54A | Microsemi Corporation |
Description: TVS DIODE |
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MXLPLAD6.5KP54Ae3 | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MXLPLAD7.5KP54AE3 | Microsemi Corporation |
Description: TVS DIODE |
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| BR246D-320G3-28V-027L | Microsemi Corporation |
Description: RELAY GEN PURPOSE DPDT 10A 28V |
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| BR246D-320G3-28V-027M | Microsemi Corporation |
Description: RELAY GEN PURPOSE DPDT 10A 28V |
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| BR246-320G3-28V-027 | Microsemi Corporation |
Description: RELAY GEN PURPOSE DPDT 10A 28V |
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| BR230-890A1-48V-027L | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 48V |
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| BR246-320G3-26V-027M | Microsemi Corporation |
Description: RELAY GEN PURPOSE DPDT 10A 26V |
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| BR246-320G3-28V-027L | Microsemi Corporation |
Description: RELAY GEN PURPOSE DPDT 10A 28V |
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| BR246-320G3-28V-027M | Microsemi Corporation |
Description: RELAY GEN PURPOSE DPDT 10A 28V |
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MXP5KE5.0CAe3 | Microsemi Corporation |
Description: TVS DIODE 5VWM 9.2VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 54.3A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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MP5KE9.0Ae3 | Microsemi Corporation |
Description: TVS DIODE 9VWM 15.4VC DO204AL |
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MAP5KE130A | Microsemi Corporation |
Description: TVS DIODE 130VWM 209VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.4A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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MP5KE7.0Ae3 | Microsemi Corporation |
Description: TVS DIODE 7VWM 12VC DO204AL |
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MP5KE8.5CA | Microsemi Corporation |
Description: TVS DIODE 8.5VWM 14.4VC DO204AL |
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MXLP5KE70CA | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC DO204AL |
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MXLP5KE8.5A | Microsemi Corporation |
Description: TVS DIODE 8.5VWM 14.4VC DO204AL |
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MXP5KE6.0CA | Microsemi Corporation |
Description: TVS DIODE 6VWM 10.3VC DO204AL |
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MXLP5KE20CAe3 | Microsemi Corporation |
Description: TVS DIODE 20VWM 32.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.4A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLP5KE40CA | Microsemi Corporation |
Description: TVS DIODE 40VWM 64.5VC DO204AL |
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MXP5KE17CA | Microsemi Corporation |
Description: TVS DIODE 17VWM 27.6VC DO204AL |
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MXLP5KE48Ae3 | Microsemi Corporation |
Description: TVS DIODE 48VWM 77.4VC DO204AL |
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MXP5KE58CAe3 | Microsemi Corporation |
Description: TVS DIODE 58VWM 93.6VC DO204AL |
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MXP5KE6.0A | Microsemi Corporation |
Description: TVS DIODE 6VWM 10.3VC DO204AL |
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MXP5KE8.5CAe3 | Microsemi Corporation |
Description: TVS DIODE 8.5VWM 14.4VC DO204AL |
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MSCD36-08 | Microsemi Corporation |
Description: DIODE MODULE GP 800V 36A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 36A Supplier Device Package: D1 Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 800 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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CPT30145 | Microsemi Corporation |
Description: DIODE MODULE 45V 150A 2TOWER |
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| CPT30145A | Microsemi Corporation |
Description: DIODE MODULE 45V TO244AB |
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| CPT30145D | Microsemi Corporation |
Description: DIODE MODULE 45V TO244AB |
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SMAJ5926B | Microsemi Corporation | Description: DIODE ZENER 11V 1.5W DO214AC |
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| SMBG5926BE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 11V 2W SMBG |
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| 090-44530-01 | Microsemi Corporation |
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS |
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| APTGT400SK120D3G | Microsemi Corporation |
Description: IGBT MODULE 1200V 580A 2100W D3 |
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AFS600-1PQ208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-1PQ208 | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-PQ208 | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-2PQ208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-2PQ208 | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-PQ208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-1PQG208 | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-1PQG208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-2PQG208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-PQG208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-2PQG208 | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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| APTGF50A120TG |
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Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Description: IGBT MODULE 1200V 75A 312W SP4
товар відсутній
| APTGF50TDU120PG |
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Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
товар відсутній
| APTGF50DDA120T3G |
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Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
товар відсутній
| APTGF50TA120PG |
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Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
товар відсутній
| APTGF50SK120T1G |
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Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP1
Description: IGBT MODULE 1200V 75A 312W SP1
товар відсутній
| APTGF50DA120CT1G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP1
Description: IGBT MODULE 1200V 75A 312W SP1
товар відсутній
| MXLPLAD6.5KP54A |
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Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MAPLAD6.5KP54Ae3 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
товар відсутній
| MXPLAD6.5KP54A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MXPLAD6.5KP54Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MAPLAD6.5KP54A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
товар відсутній
| MPLAD6.5KP54A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Description: TVS DIODE 54VWM 87.1VC PLAD
товар відсутній
| MXLPLAD6.5KP54Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| BR246D-320G3-28V-027L |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
товар відсутній
| BR246D-320G3-28V-027M |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
товар відсутній
| BR246-320G3-28V-027 |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
товар відсутній
| BR230-890A1-48V-027L |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 48V
Description: RELAY GEN PURPOSE 4PDT 10A 48V
товар відсутній
| BR246-320G3-26V-027M |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 26V
Description: RELAY GEN PURPOSE DPDT 10A 26V
товар відсутній
| BR246-320G3-28V-027L |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
товар відсутній
| BR246-320G3-28V-027M |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
товар відсутній
| MXP5KE5.0CAe3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 5VWM 9.2VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54.3A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5VWM 9.2VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54.3A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
| MP5KE9.0Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 9VWM 15.4VC DO204AL
Description: TVS DIODE 9VWM 15.4VC DO204AL
товар відсутній
| MAP5KE130A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 130VWM 209VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 130VWM 209VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
| MP5KE8.5CA |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
товар відсутній
| MXLP5KE70CA |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC DO204AL
Description: TVS DIODE 70VWM 113VC DO204AL
товар відсутній
| MXLP5KE8.5A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
товар відсутній
| MXP5KE6.0CA |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 6VWM 10.3VC DO204AL
Description: TVS DIODE 6VWM 10.3VC DO204AL
товар відсутній
| MXLP5KE20CAe3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 20VWM 32.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 20VWM 32.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MXLP5KE40CA |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 40VWM 64.5VC DO204AL
Description: TVS DIODE 40VWM 64.5VC DO204AL
товар відсутній
| MXP5KE17CA |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 17VWM 27.6VC DO204AL
Description: TVS DIODE 17VWM 27.6VC DO204AL
товар відсутній
| MXLP5KE48Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
Description: TVS DIODE 48VWM 77.4VC DO204AL
товар відсутній
| MXP5KE58CAe3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 58VWM 93.6VC DO204AL
Description: TVS DIODE 58VWM 93.6VC DO204AL
товар відсутній
| MXP5KE6.0A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 6VWM 10.3VC DO204AL
Description: TVS DIODE 6VWM 10.3VC DO204AL
товар відсутній
| MXP5KE8.5CAe3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
товар відсутній
| MSCD36-08 |
|
Виробник: Microsemi Corporation
Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1477.34 грн |
| SMBG5926BE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 11V 2W SMBG
Description: DIODE ZENER 11V 2W SMBG
товар відсутній
| 090-44530-01 |
|
Виробник: Microsemi Corporation
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
товар відсутній
| APTGT400SK120D3G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 580A 2100W D3
Description: IGBT MODULE 1200V 580A 2100W D3
товар відсутній