Виробник: Spectrum Control
18N-20

Виробник: Goford Semiconductor
Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V

Виробник: GOFORD Semiconductor
N-CH 200V 18A 0.136OhmMAX at 10V TO-252

Виробник: GOFORD Semiconductor
N-CH,200V,18A,RD(max) Less Than 0.19Ohm at 10V,VTH 1.0V to 3.0V, TO-220F

Виробник: Goford Semiconductor
Description: MOSFET N-CH 200V 18A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V

Виробник: Goford Semiconductor
Description: MOSFET N-CH 200V 18A TO-251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V

Виробник: Goford Semiconductor
Description: N200V, 18A,RD<0.16@10V,VTH1V~3V,
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V

Виробник: Visual Communications Company - VCC
Description: LED PNL IND RED FRESNEL 18.50MM
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2800mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Red
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia

Виробник: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 5V TAB

Виробник: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 5V WIRE

Виробник: Visual Communications Company - VCC
Description: LED PNL IND RED FRESNEL 18.50MM
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2800mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Red
Panel Cutout Shape: Round
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia

Виробник: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 120V TAB

Виробник: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 120V WIRE

Виробник: Visual Communications Company - VCC
Description: LED PNL IND RED FRESNEL 18.50MM
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2800mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Red
Panel Cutout Shape: Round
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia

Виробник: Visual Communications Company - VCC
Description: LED PNL IND RED FRESNEL 18.50MM
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2800mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Red
Panel Cutout Shape: Round
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia

Виробник: Visual Communications Company - VCC
Description: LED PNL IND RED FRESNEL 18.50MM
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2800mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Red
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia

Виробник: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM RED 28V TAB

Виробник: Visual Communications Company - VCC
Description: LED PNL IND RED FRESNEL 18.50MM
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2800mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Red
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia

Виробник: onsemi
Description: MOSFET N-CH 200V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V

Виробник: onsemi
MOSFETs 200V NChannel UniFET

Виробник: onsemi
Description: MOSFET N-CH 200V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V

Виробник: onsemi
Description: MOSFET N-CH 200V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 200V 18A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V

Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement

Виробник: onsemi
MOSFETs 200V N-Ch adv QFET V2 Series

Виробник: onsemi
Description: MOSFET N-CH 200V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V

Виробник: onsemi
Description: MOSFET N-CH 200V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 200V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V

Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 200V 18A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V

Виробник: Goford Semiconductor
Description: MOSFET,N-CH,200V,18A,110W,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 100 V

Виробник: Goford Semiconductor
Description: MOSFET N-CH 200V 18A 110W 190m(m
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 100 V

Виробник: Panjit International Inc.
Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V

Виробник: Panjit
MOSFETs 200V N-Channel Enhancement Mode MOSFET

Виробник: Panjit International Inc.
Description: 200V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V

Виробник: Nisshinbo Micro Devices Inc.
Description: IC SUPERVISOR 1 CHANNEL SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 70ms Minimum
Voltage - Threshold: 2V
Supplier Device Package: SOT-23-5
Part Status: Active
DigiKey Programmable: Not Verified

Виробник: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 20pF, +-5%, 50V

Виробник: Nexperia USA Inc.
Description: RP118N - 100mA Low Supply Curren
Packaging: Bulk
Part Status: Active

Виробник: Nexperia USA Inc.
Description: RP118N - 100mA Low Supply Curren
Packaging: Bulk
Part Status: Active

Виробник: SiTime
Description: MEMS OSC XO 20.0000MHZ LVCMOS
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Size / Dimension: 0.114" L x 0.063" W (2.90mm x 1.60mm)
Mounting Type: Surface Mount
Output: LVCMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 4mA
Height - Seated (Max): 0.057" (1.45mm)
Part Status: Active
Frequency: 20 MHz
Base Resonator: MEMS
Supplier Device Package: SOT-23-5

Виробник: SiTime
Description: MEMS OSC XO 20.0000MHZ LVCMOS LV
Packaging: Strip
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±30ppm
Voltage - Supply: 1.8V
Ratings: AEC-Q100
Current - Supply (Max): 4.5mA
Supplier Device Package: 4-PQFN (2.5x2)
Height - Seated (Max): 0.031" (0.80mm)
Part Status: Active
Frequency: 20 MHz
Base Resonator: MEMS

Виробник: Torex Semiconductor Ltd
Description: IC SUPERVISOR 1 CHANNEL 4USP
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-USP (1.2x1.6)
DigiKey Programmable: Not Verified

Виробник: Torex Semiconductor Ltd
Description: IC SUPERVISOR 1 CHANNEL 4USP
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-USP (1.2x1.6)
DigiKey Programmable: Not Verified

Виробник: Torex Semiconductor
Supervisory Circuits Voltage Detector with Separated Sense Pin and Delay Cap. Pin

Виробник: Torex Semiconductor Ltd
Description: IC SUPERVISOR 1 CHANNEL SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: SOT-25-5
DigiKey Programmable: Not Verified

Виробник: Torex Semiconductor
Supervisory Circuits Voltage Detector with Separated Sense Pin and Delay Cap. Pin

Виробник: Torex Semiconductor Ltd
Description: IC SUPERVISOR 1 CHANNEL 4USP
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-USP (1.2x1.6)
DigiKey Programmable: Not Verified

Виробник: Torex Semiconductor
Supervisory Circuits Voltage Detector with Separated Sense Pin and Delay Cap. Pin

Виробник: YFW
200V 18A 100W 140mOhm@10V 4V TO-220C Single FETs, MOSFETs YFW18N20AC TO-220C YFW TYFW18N20AC YFW
кількість в упаковці: 50 шт

Виробник: FAIRCHILD
07+ SOT-252

Виробник: Fairchild

Виробник: fairchild
07+ to-252/d-pak

Виробник: ST
07+ TO-263/D2-PAK

Виробник: Molex
Description: TYPE N M-F 18 GHZ 20DB ATTENUATO
Power (Watts): 2W
Packaging: Box
Package / Case: N-Type In-Line Module
Attenuation Value: 20dB
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 18 GHz

Виробник: Molex
Attenuators - Interconnects SMA

Транзистори > Польові N-канальні