Продукція > NAVITAS SEMICONDUCTOR, INC. > Всі товари виробника NAVITAS SEMICONDUCTOR, INC. (645) > Сторінка 7 з 11
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRF600200R | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTTKY 200V TO-244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: TO-244AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
MBRF60020R | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 20V 300A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: TO-244AB Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 300 A Current - Reverse Leakage @ Vr: 10 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
MBRH12040R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 40V 120A D-67Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
на замовлення 44 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MBRT40045 | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 45V 200A 3TOWER |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSRTA20060AD | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 600V 200A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | ||||||||||||
| MSRTA20060D | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GEN PURP 600V 200APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200A Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | |||||||||||||
| MUR2505 | Navitas Semiconductor, Inc. |
Description: DIODE STANDARD 50V 25A DO4 |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
| MUR2505R | Navitas Semiconductor, Inc. |
Description: DIODE STANDARD REV 50V 25A DO4 |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
|
MUR2510 | Navitas Semiconductor, Inc. |
Description: DIODE STANDARD 100V 25A DO4 |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||
|
MUR2X030A10 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 1000V 30A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 78 шт В кошику од. на суму грн. | ||||||||||||
|
MUR2X060A02 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 200V 60A SOT-227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MUR2X060A06 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 600V 60A SOT-227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
MUR2X100A02 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 200V 100A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
MUR2X100A04 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 400V 100A SOT227 |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MUR2X120A10 | Navitas Semiconductor, Inc. |
Description: DIODE MOD GP 1000V 120A SOT-227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
MURTA20060 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | ||||||||||||
|
MURTA20060R | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | ||||||||||||
|
NV6025C | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 170MOHM PQF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6025C | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 170MOHM PQF |
на замовлення 2824 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6026C | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 150MOHM PQF |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6026C | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 150MOHM PQF |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6027 | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 120MOHM PQF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6027 | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 120MOHM PQF |
на замовлення 2910 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6028 | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 70MOHM PQFN |
на замовлення 2930 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6028 | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 70MOHM PQFN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6029 | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 50MOHM PQFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 24mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6029 | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 50MOHM PQFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 24mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V |
на замовлення 2738 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6048C | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 120MOHM DPA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
NV6048C | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 120MOHM DPA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
NV6048C-RA | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 120MOHM DPA |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
|
NV6048C-RA | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 120MOHM DPA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
NV6113 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 8-PWRVDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 5 A Voltage: 650 V |
на замовлення 979 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6113 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 8-PWRVDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 5 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6113-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 8-PWRVDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Current: 5 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6113-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 8-PWRVDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Current: 5 A Voltage: 650 V |
на замовлення 1013 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6115 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 8-PWRVDFNPart Status: Active Supplier Device Package: 8-QFN (5x6) Ratio - Input:Output: 1:1 Current - Output (Max): 8A Voltage: 650 V Current: 8 A Configuration: Half Bridge Type: MOSFET Voltage - Load: 650V Input Type: Non-Inverting Rds On (Typ): 170mOhm Output Configuration: High Side or Low Side Operating Temperature: -40°C ~ 125°C (TC) Switch Type: General Purpose Interface: PWM Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Voltage - Supply (Vcc/Vdd): 10V ~ 24V |
на замовлення 871 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6115 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 8-PWRVDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 170mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 8 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6115-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 8-PWRVDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 170mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 8 A Voltage: 650 V |
на замовлення 1274 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6115-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 8-PWRVDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 170mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 8 A Voltage: 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6117 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 12A 8-PWRVDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 120mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 12 A Voltage: 650 V |
на замовлення 783 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NV6117 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 12A 8-PWRVDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 120mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 12 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6117-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 12A 8-PWRVDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 120mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 12 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6117-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 12A 8-PWRVDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 120mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 12 A Voltage: 650 V |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NV6123 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 30-PWRVQFNPackaging: Tape & Reel (TR) Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
|
NV6123 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 30-PWRVQFNPackaging: Cut Tape (CT) Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Part Status: Active |
на замовлення 1060 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NV6123-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 30-PWRVQFNPackaging: Tape & Reel (TR) Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Current: 5 A Voltage: 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NV6123-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 30-PWRVQFNPackaging: Cut Tape (CT) Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Current: 5 A Voltage: 650 V |
на замовлення 1635 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NV6125 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 30-PWRVQFNVoltage: 650 V Current: 8 A Configuration: Half Bridge Type: MOSFET Supplier Device Package: 30-QFN (6x8) Ratio - Input:Output: 1:1 Current - Output (Max): 8A Voltage - Supply (Vcc/Vdd): 10V ~ 24V Voltage - Load: 650V Input Type: Non-Inverting Rds On (Typ): 175mOhm Output Configuration: High Side or Low Side Operating Temperature: -40°C ~ 125°C (TC) Switch Type: General Purpose Interface: PWM Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Packaging: Cut Tape (CT) Package / Case: 30-PowerVQFN |
на замовлення 4716 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NV6125 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 30-PWRVQFNVoltage: 650 V Current: 8 A Configuration: Half Bridge Type: MOSFET Supplier Device Package: 30-QFN (6x8) Ratio - Input:Output: 1:1 Current - Output (Max): 8A Voltage - Supply (Vcc/Vdd): 10V ~ 24V Voltage - Load: 650V Input Type: Non-Inverting Rds On (Typ): 175mOhm Output Configuration: High Side or Low Side Operating Temperature: -40°C ~ 125°C (TC) Switch Type: General Purpose Interface: PWM Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 30-PowerVQFN Packaging: Tape & Reel (TR) Number of Outputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
|
NV6125-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 30-PWRVQFNPackaging: Tape & Reel (TR) Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 175mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Part Status: Active |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NV6125-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 30-PWRVQFNPackaging: Cut Tape (CT) Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 175mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Part Status: Active |
на замовлення 1701 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NV6127 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 12A 30-PWRVQFNSupplier Device Package: 30-QFN (6x8) Ratio - Input:Output: 1:1 Current - Output (Max): 12A Voltage - Supply (Vcc/Vdd): 10V ~ 30V Voltage - Load: 650V Input Type: Non-Inverting Rds On (Typ): 125mOhm Output Configuration: High Side or Low Side Operating Temperature: -40°C ~ 125°C (TC) Switch Type: General Purpose Interface: PWM Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 30-PowerVQFN Voltage: 650 V Current: 12 A Configuration: Half Bridge Type: MOSFET Packaging: Cut Tape (CT) |
на замовлення 3635 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NV6127 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 12A 30-PWRVQFNVoltage: 650 V Current: 12 A Configuration: Half Bridge Type: MOSFET Supplier Device Package: 30-QFN (6x8) Ratio - Input:Output: 1:1 Current - Output (Max): 12A Voltage - Supply (Vcc/Vdd): 10V ~ 30V Voltage - Load: 650V Input Type: Non-Inverting Rds On (Typ): 125mOhm Output Configuration: High Side or Low Side Operating Temperature: -40°C ~ 125°C (TC) Switch Type: General Purpose Interface: PWM Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 30-PowerVQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6127C | Navitas Semiconductor, Inc. |
Description: GANFAST SINGLE 650V 125MOHM PQFN |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
NV6127C-RA | Navitas Semiconductor, Inc. |
Description: GANFAST SINGLE 650V 125MOHM PQFN |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
NV6127-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 12A 30-PWRVQFNPackaging: Tape & Reel (TR) Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 125mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 30V Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Current: 12 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
NV6127-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 12A 30-PWRVQFNPackaging: Cut Tape (CT) Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 125mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 30V Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Current: 12 A Voltage: 650 V |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NV6128 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 20A 30-PWRVQFNPackaging: Tape & Reel (TR) Features: PWM Input, Slew Rate Controlled Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C Output Configuration: High/Low Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Fault Protection: Over Temperature, Short Circuit Part Status: Active Type: MOSFET Configuration: Half Bridge Current: 20 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
|
NV6128 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 20A 30-PWRVQFNPackaging: Cut Tape (CT) Features: PWM Input, Slew Rate Controlled Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C Output Configuration: High/Low Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Fault Protection: Over Temperature, Short Circuit Part Status: Active Type: MOSFET Configuration: Half Bridge Current: 20 A Voltage: 650 V |
на замовлення 2850 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NV6128-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 20A 30-PWRVQFNPackaging: Tape & Reel (TR) Package / Case: 30-PowerVQFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 20A Ratio - Input:Output: 1:1 Supplier Device Package: 30-QFN (6x8) Current: 20 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| MBRF600200R |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRF60020R |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 20V 300A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Description: DIODE MOD SCHOT 20V 300A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRH12040R |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 40V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE SCHOTTKY REV 40V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4849.04 грн |
| 36+ | 3280.32 грн |
| MBRT40045 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 200A 3TOWER
Description: DIODE MOD SCHOTT 45V 200A 3TOWER
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8688.55 грн |
| 40+ | 6589.56 грн |
| MSRTA20060AD |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 24 шт
В кошику
од. на суму грн.
| MSRTA20060D |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GEN PURP 600V 200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE MODULE GEN PURP 600V 200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 24 шт
В кошику
од. на суму грн.
| MUR2505 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 50V 25A DO4
Description: DIODE STANDARD 50V 25A DO4
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| MUR2505R |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE STANDARD REV 50V 25A DO4
Description: DIODE STANDARD REV 50V 25A DO4
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| MUR2510 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 100V 25A DO4
Description: DIODE STANDARD 100V 25A DO4
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| MUR2X030A10 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 78 шт
В кошику
од. на суму грн.
| MUR2X060A02 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3686.03 грн |
| MUR2X060A06 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 60A SOT-227
Description: DIODE MODULE GP 600V 60A SOT-227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A02 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 200V 100A SOT227
Description: DIODE MODULE GP 200V 100A SOT227
товару немає в наявності
В кошику
од. на суму грн.
| MUR2X100A04 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 400V 100A SOT227
Description: DIODE MODULE GP 400V 100A SOT227
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4040.47 грн |
| MUR2X120A10 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD GP 1000V 120A SOT-227
Description: DIODE MOD GP 1000V 120A SOT-227
товару немає в наявності
В кошику
од. на суму грн.
| MURTA20060 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 24 шт
В кошику
од. на суму грн.
| MURTA20060R |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 24 шт
В кошику
од. на суму грн.
| NV6025C |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 170MOHM PQF
Description: GANFET DISCRETE 650V 170MOHM PQF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NV6025C |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 170MOHM PQF
Description: GANFET DISCRETE 650V 170MOHM PQF
на замовлення 2824 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 443.84 грн |
| 10+ | 286.46 грн |
| 50+ | 225.89 грн |
| 100+ | 193.70 грн |
| 500+ | 178.87 грн |
| NV6026C |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 150MOHM PQF
Description: GANFET DISCRETE 650V 150MOHM PQF
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 172.95 грн |
| NV6026C |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 150MOHM PQF
Description: GANFET DISCRETE 650V 150MOHM PQF
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 466.79 грн |
| 10+ | 302.00 грн |
| 50+ | 238.66 грн |
| 100+ | 204.86 грн |
| 500+ | 191.30 грн |
| NV6027 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 120MOHM PQF
Description: GANFET DISCRETE 650V 120MOHM PQF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NV6027 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 120MOHM PQF
Description: GANFET DISCRETE 650V 120MOHM PQF
на замовлення 2910 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 564.89 грн |
| 10+ | 368.66 грн |
| 50+ | 293.76 грн |
| 100+ | 253.07 грн |
| 500+ | 246.21 грн |
| NV6028 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 70MOHM PQFN
Description: GANFET DISCRETE 650V 70MOHM PQFN
на замовлення 2930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 832.30 грн |
| 10+ | 555.02 грн |
| 50+ | 449.74 грн |
| 100+ | 410.35 грн |
| NV6028 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 70MOHM PQFN
Description: GANFET DISCRETE 650V 70MOHM PQFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NV6029 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NV6029 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
на замовлення 2738 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1064.11 грн |
| 10+ | 719.88 грн |
| 50+ | 602.37 грн |
| NV6048C |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 120MOHM DPA
Description: GANFET DISCRETE 650V 120MOHM DPA
товару немає в наявності
В кошику
од. на суму грн.
| NV6048C |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 120MOHM DPA
Description: GANFET DISCRETE 650V 120MOHM DPA
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NV6048C-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 120MOHM DPA
Description: GANFET DISCRETE 650V 120MOHM DPA
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| NV6048C-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 120MOHM DPA
Description: GANFET DISCRETE 650V 120MOHM DPA
товару немає в наявності
В кошику
од. на суму грн.
| NV6113 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.94 грн |
| 10+ | 158.39 грн |
| 25+ | 145.09 грн |
| 100+ | 122.47 грн |
| 250+ | 115.94 грн |
| 500+ | 114.10 грн |
| NV6113 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NV6113-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NV6113-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
на замовлення 1013 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.94 грн |
| 10+ | 158.39 грн |
| 25+ | 145.09 грн |
| 100+ | 122.47 грн |
| 250+ | 115.94 грн |
| 500+ | 112.01 грн |
| NV6115 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Part Status: Active
Supplier Device Package: 8-QFN (5x6)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 170mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Part Status: Active
Supplier Device Package: 8-QFN (5x6)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 170mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
на замовлення 871 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.40 грн |
| 10+ | 208.37 грн |
| 25+ | 191.53 грн |
| 100+ | 162.42 грн |
| 250+ | 154.15 грн |
| 500+ | 153.43 грн |
| NV6115 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NV6115-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
на замовлення 1274 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.40 грн |
| 10+ | 208.37 грн |
| 25+ | 191.56 грн |
| 100+ | 162.42 грн |
| 250+ | 154.15 грн |
| NV6115-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 170.87 грн |
| NV6117 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
на замовлення 783 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 421.69 грн |
| 10+ | 310.92 грн |
| 25+ | 287.19 грн |
| 100+ | 245.07 грн |
| 250+ | 235.87 грн |
| NV6117 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NV6117-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NV6117-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
на замовлення 955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 421.69 грн |
| 10+ | 310.92 грн |
| 25+ | 287.19 грн |
| 100+ | 245.07 грн |
| 250+ | 233.41 грн |
| 500+ | 226.38 грн |
| NV6123 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NV6123 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
на замовлення 1060 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.94 грн |
| 10+ | 158.39 грн |
| 25+ | 145.09 грн |
| 100+ | 122.47 грн |
| 250+ | 115.94 грн |
| 500+ | 114.10 грн |
| NV6123-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 5 A
Voltage: 650 V
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 5 A
Voltage: 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 127.08 грн |
| NV6123-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 5 A
Voltage: 650 V
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 5 A
Voltage: 650 V
на замовлення 1635 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.94 грн |
| 10+ | 158.39 грн |
| 25+ | 145.09 грн |
| 100+ | 122.47 грн |
| 250+ | 115.94 грн |
| 500+ | 112.01 грн |
| NV6125 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 30-PWRVQFN
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Supplier Device Package: 30-QFN (6x8)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 175mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Description: MOSFET IPM 650V 8A 30-PWRVQFN
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Supplier Device Package: 30-QFN (6x8)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 175mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
на замовлення 4716 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.40 грн |
| 10+ | 208.37 грн |
| 25+ | 191.56 грн |
| 100+ | 162.42 грн |
| 250+ | 154.15 грн |
| 500+ | 153.41 грн |
| NV6125 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 30-PWRVQFN
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Supplier Device Package: 30-QFN (6x8)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 175mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 30-PowerVQFN
Packaging: Tape & Reel (TR)
Number of Outputs: 1
Description: MOSFET IPM 650V 8A 30-PWRVQFN
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Supplier Device Package: 30-QFN (6x8)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 175mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 30-PowerVQFN
Packaging: Tape & Reel (TR)
Number of Outputs: 1
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NV6125-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
Description: MOSFET IPM 650V 8A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 170.87 грн |
| NV6125-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
Description: MOSFET IPM 650V 8A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
на замовлення 1701 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.40 грн |
| 10+ | 208.37 грн |
| 25+ | 191.56 грн |
| 100+ | 162.42 грн |
| 250+ | 154.15 грн |
| 500+ | 149.17 грн |
| NV6127 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Supplier Device Package: 30-QFN (6x8)
Ratio - Input:Output: 1:1
Current - Output (Max): 12A
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 125mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 30-PowerVQFN
Voltage: 650 V
Current: 12 A
Configuration: Half Bridge
Type: MOSFET
Packaging: Cut Tape (CT)
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Supplier Device Package: 30-QFN (6x8)
Ratio - Input:Output: 1:1
Current - Output (Max): 12A
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 125mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 30-PowerVQFN
Voltage: 650 V
Current: 12 A
Configuration: Half Bridge
Type: MOSFET
Packaging: Cut Tape (CT)
на замовлення 3635 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 421.69 грн |
| 10+ | 310.92 грн |
| 25+ | 287.19 грн |
| 100+ | 245.07 грн |
| 250+ | 235.87 грн |
| NV6127 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Voltage: 650 V
Current: 12 A
Configuration: Half Bridge
Type: MOSFET
Supplier Device Package: 30-QFN (6x8)
Ratio - Input:Output: 1:1
Current - Output (Max): 12A
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 125mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 30-PowerVQFN
Packaging: Tape & Reel (TR)
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Voltage: 650 V
Current: 12 A
Configuration: Half Bridge
Type: MOSFET
Supplier Device Package: 30-QFN (6x8)
Ratio - Input:Output: 1:1
Current - Output (Max): 12A
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 125mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 30-PowerVQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NV6127C |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFAST SINGLE 650V 125MOHM PQFN
Description: GANFAST SINGLE 650V 125MOHM PQFN
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NV6127C-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: GANFAST SINGLE 650V 125MOHM PQFN
Description: GANFAST SINGLE 650V 125MOHM PQFN
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NV6127-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 12 A
Voltage: 650 V
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 12 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NV6127-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 12 A
Voltage: 650 V
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 12 A
Voltage: 650 V
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 421.69 грн |
| 10+ | 310.92 грн |
| 25+ | 287.19 грн |
| 100+ | 245.07 грн |
| 250+ | 233.41 грн |
| NV6128 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 20A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Features: PWM Input, Slew Rate Controlled
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High/Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 20 A
Voltage: 650 V
Description: MOSFET IPM 650V 20A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Features: PWM Input, Slew Rate Controlled
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High/Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 20 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NV6128 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 20A 30-PWRVQFN
Packaging: Cut Tape (CT)
Features: PWM Input, Slew Rate Controlled
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High/Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 20 A
Voltage: 650 V
Description: MOSFET IPM 650V 20A 30-PWRVQFN
Packaging: Cut Tape (CT)
Features: PWM Input, Slew Rate Controlled
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High/Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 20 A
Voltage: 650 V
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 617.11 грн |
| 10+ | 461.46 грн |
| 25+ | 428.17 грн |
| 100+ | 367.56 грн |
| 250+ | 359.92 грн |
| NV6128-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 20A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 20 A
Voltage: 650 V
Description: MOSFET IPM 650V 20A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 20 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.









