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1N3883 1N3883 Navitas Semiconductor, Inc. 1n3879.pdf Description: DIODE STANDARD 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1+673.55 грн
10+444.16 грн
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2W10M Navitas Semiconductor, Inc. 2W005M-2W10M.pdf Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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BR1010 Navitas Semiconductor, Inc. br1010.pdf Description: BRIDGE RECT 1PHASE 1KV 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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BR610 Navitas Semiconductor, Inc. br66.pdf Description: BRIDGE RECT 1PHASE 1KV 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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BR810 BR810 Navitas Semiconductor, Inc. br86.pdf Description: BRIDGE RECT 1PHASE 1KV 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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DB105G Navitas Semiconductor, Inc. db105g.pdf Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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DB106G Navitas Semiconductor, Inc. db105g.pdf Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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DB107G Navitas Semiconductor, Inc. db105g.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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DB157G Navitas Semiconductor, Inc. db155g.pdf description Description: BRIDGE RECT 1PHASE 1KV 1.5A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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G2R1000MT33J-TR G2R1000MT33J-TR Navitas Semiconductor, Inc. G2R1000MT33J.pdf Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+1017.86 грн
Мінімальне замовлення: 800
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G2R1000MT33J-TR G2R1000MT33J-TR Navitas Semiconductor, Inc. G2R1000MT33J.pdf Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
на замовлення 1086 шт:
термін постачання 21-31 дні (днів)
1+1718.45 грн
10+1199.71 грн
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G3R12MT12K G3R12MT12K Navitas Semiconductor, Inc. G3R12MT12K.pdf Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
на замовлення 1607 шт:
термін постачання 21-31 дні (днів)
1+4849.74 грн
30+3555.05 грн
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G3R20MT12K G3R20MT12K Navitas Semiconductor, Inc. G3R20MT12K.pdf Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
на замовлення 555 шт:
термін постачання 21-31 дні (днів)
1+3026.28 грн
30+1992.81 грн
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G3R20MT12N G3R20MT12N Navitas Semiconductor, Inc. G3R20MT12N.pdf Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
на замовлення 213 шт:
термін постачання 21-31 дні (днів)
1+4449.36 грн
10+3278.86 грн
100+3200.88 грн
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G3R20MT17K G3R20MT17K Navitas Semiconductor, Inc. G3R20MT17K.pdf Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
на замовлення 368 шт:
термін постачання 21-31 дні (днів)
1+8004.92 грн
30+6474.78 грн
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G3R20MT17N G3R20MT17N Navitas Semiconductor, Inc. G3R20MT17N.pdf Description: SIC MOSFET N-CH 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 523W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+9859.11 грн
10+8291.61 грн
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G3R30MT12K G3R30MT12K Navitas Semiconductor, Inc. G3R30MT12K.pdf Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
1+2017.24 грн
30+1256.71 грн
120+1199.86 грн
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G3R40MT12K G3R40MT12K Navitas Semiconductor, Inc. G3R40MT12K.pdf Description: SIC MOSFET N-CH 71A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
на замовлення 1389 шт:
термін постачання 21-31 дні (днів)
1+1638.21 грн
30+1002.39 грн
120+922.29 грн
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G3R75MT12K G3R75MT12K Navitas Semiconductor, Inc. G3R75MT12K.pdf Description: SIC MOSFET N-CH 41A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
на замовлення 920 шт:
термін постачання 21-31 дні (днів)
1+1074.78 грн
30+633.86 грн
120+545.89 грн
510+504.21 грн
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GAP3SLT33-214 GAP3SLT33-214 Navitas Semiconductor, Inc. GAP3SLT33-214.pdf Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+672.32 грн
Мінімальне замовлення: 3000
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GAP3SLT33-214 GAP3SLT33-214 Navitas Semiconductor, Inc. GAP3SLT33-214.pdf Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
на замовлення 5217 шт:
термін постачання 21-31 дні (днів)
1+942.46 грн
10+818.52 грн
100+788.07 грн
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GB01SLT06-214 GB01SLT06-214 Navitas Semiconductor, Inc. GB01SLT06-214.pdf Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
3000+71.68 грн
Мінімальне замовлення: 3000
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GB01SLT06-214 GB01SLT06-214 Navitas Semiconductor, Inc. GB01SLT06-214.pdf Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
на замовлення 34810 шт:
термін постачання 21-31 дні (днів)
3+119.51 грн
10+98.32 грн
100+91.45 грн
500+73.48 грн
Мінімальне замовлення: 3
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GB05MPS33-263 GB05MPS33-263 Navitas Semiconductor, Inc. GB05MPS33-263.pdf Description: DIODE SIL CARB 3300V 14A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 288pF @ 1V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 3000 V
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
1+2602.86 грн
50+1651.73 грн
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GBJ10M Navitas Semiconductor, Inc. gbj10j.pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBPC2510T GBPC2510T Navitas Semiconductor, Inc. gbpc2506t.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBPC2510W GBPC2510W Navitas Semiconductor, Inc. gbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+402.94 грн
50+203.33 грн
100+185.51 грн
В кошику  од. на суму  грн.
GBPC3510T GBPC3510T Navitas Semiconductor, Inc. gbpc3510t.pdf Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GBPC3510W GBPC3510W Navitas Semiconductor, Inc. gbpc3506t.pdf Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 858 шт:
термін постачання 21-31 дні (днів)
1+441.35 грн
50+224.80 грн
100+205.47 грн
500+161.07 грн
В кошику  од. на суму  грн.
GBPC5010T Navitas Semiconductor, Inc. gbpc5006t.pdf Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GBPC5010W GBPC5010W Navitas Semiconductor, Inc. gbpc5006t.pdf Description: BRIDGE RECT 1P 1KV 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GBU4A GBU4A Navitas Semiconductor, Inc. gbu4a.pdf Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
3+119.51 грн
10+73.08 грн
100+48.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU4G GBU4G Navitas Semiconductor, Inc. gbu4a.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1710 шт:
термін постачання 21-31 дні (днів)
3+119.51 грн
10+73.08 грн
100+48.79 грн
500+36.03 грн
1000+32.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU4M Navitas Semiconductor, Inc. gbu4j.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU6M Navitas Semiconductor, Inc. gbu6j.pdf Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU8B GBU8B Navitas Semiconductor, Inc. gbu8a.pdf Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 3066 шт:
термін постачання 21-31 дні (днів)
3+134.88 грн
10+82.37 грн
100+55.41 грн
500+41.16 грн
1000+37.67 грн
2000+34.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU8D GBU8D Navitas Semiconductor, Inc. gbu8a.pdf Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4838 шт:
термін постачання 21-31 дні (днів)
3+134.88 грн
10+82.37 грн
100+55.41 грн
500+41.16 грн
1000+37.67 грн
2000+34.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU8G GBU8G Navitas Semiconductor, Inc. gbu8a.pdf Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 947 шт:
термін постачання 21-31 дні (днів)
3+134.88 грн
10+82.37 грн
100+55.41 грн
500+41.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU8J GBU8J Navitas Semiconductor, Inc. gbu8j.pdf Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 6480 шт:
термін постачання 21-31 дні (днів)
3+134.88 грн
10+82.37 грн
100+55.41 грн
500+41.16 грн
1000+37.67 грн
2000+34.74 грн
5000+31.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU8M Navitas Semiconductor, Inc. gbu8j.pdf Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GD02MPS12E GD02MPS12E Navitas Semiconductor, Inc. GD02MPS12E.pdf Description: DIODE SIL CARB 1200V 8A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+64.68 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
GD02MPS12E GD02MPS12E Navitas Semiconductor, Inc. GD02MPS12E.pdf Description: DIODE SIL CARB 1200V 8A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 3417 шт:
термін постачання 21-31 дні (днів)
3+128.05 грн
10+90.84 грн
25+82.63 грн
100+69.06 грн
250+65.02 грн
500+62.58 грн
1000+59.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KBJ2510G Navitas Semiconductor, Inc. kbj2506g.pdf Description: BRIDGE RECT 1PHASE 1KV 25A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
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KBL406G Navitas Semiconductor, Inc. kbl406g.pdf Description: BRIDGE RECT 1PHASE 600V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
KBL602G Navitas Semiconductor, Inc. kbl601g.pdf Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
KBL610G Navitas Semiconductor, Inc. kbl606g.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
3+136.45 грн
10+83.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KBP201G KBP201G Navitas Semiconductor, Inc. kbp201g.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP202G KBP202G Navitas Semiconductor, Inc. kbp201g.pdf Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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KBP203G KBP203G Navitas Semiconductor, Inc. Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP204G KBP204G Navitas Semiconductor, Inc. kbp201g.pdf Description: BRIDGE RECT 1PHASE 400V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP206G KBP206G Navitas Semiconductor, Inc. kbp206g.pdf description Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP208G KBP208G Navitas Semiconductor, Inc. kbp206g.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 441 шт:
термін постачання 21-31 дні (днів)
5+70.86 грн
10+42.58 грн
100+27.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
KBP210G KBP210G Navitas Semiconductor, Inc. kbp206g.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
KBPC15010T KBPC15010T Navitas Semiconductor, Inc. kbpc1506t.pdf Description: BRIDGE RECT 1P 1KV 15A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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KBPC1510T KBPC1510T Navitas Semiconductor, Inc. kbpc1506t.pdf Description: BRIDGE RECT 1P 1KV 15A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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KBPC1510W KBPC1510W Navitas Semiconductor, Inc. kbpc1506t.pdf Description: BRIDGE RECT 1P 1KV 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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KBPC25010T KBPC25010T Navitas Semiconductor, Inc. kbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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KBPC2510T KBPC2510T Navitas Semiconductor, Inc. kbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
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KBPC2510W KBPC2510W Navitas Semiconductor, Inc. kbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1994 шт:
термін постачання 21-31 дні (днів)
1+373.91 грн
50+187.91 грн
100+171.21 грн
500+133.23 грн
1000+125.38 грн
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KBPC35010T KBPC35010T Navitas Semiconductor, Inc. kbpc3506t.pdf Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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1N3883 1n3879.pdf
1N3883
Виробник: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+673.55 грн
10+444.16 грн
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2W10M 2W005M-2W10M.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
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BR1010 br1010.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
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BR610 br66.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 6A BR-6
Packaging: Bulk
Package / Case: 4-Square, BR-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-6
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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BR810 br86.pdf
BR810
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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DB105G db105g.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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DB106G db105g.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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DB107G db105g.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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DB157G description db155g.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 1.5A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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G2R1000MT33J-TR G2R1000MT33J.pdf
G2R1000MT33J-TR
Виробник: Navitas Semiconductor, Inc.
Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+1017.86 грн
Мінімальне замовлення: 800
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G2R1000MT33J-TR G2R1000MT33J.pdf
G2R1000MT33J-TR
Виробник: Navitas Semiconductor, Inc.
Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
на замовлення 1086 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1718.45 грн
10+1199.71 грн
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G3R12MT12K G3R12MT12K.pdf
G3R12MT12K
Виробник: Navitas Semiconductor, Inc.
Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
на замовлення 1607 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4849.74 грн
30+3555.05 грн
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G3R20MT12K G3R20MT12K.pdf
G3R20MT12K
Виробник: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
на замовлення 555 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3026.28 грн
30+1992.81 грн
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G3R20MT12N G3R20MT12N.pdf
G3R20MT12N
Виробник: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
на замовлення 213 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4449.36 грн
10+3278.86 грн
100+3200.88 грн
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G3R20MT17K G3R20MT17K.pdf
G3R20MT17K
Виробник: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
на замовлення 368 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8004.92 грн
30+6474.78 грн
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G3R20MT17N G3R20MT17N.pdf
G3R20MT17N
Виробник: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 523W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9859.11 грн
10+8291.61 грн
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G3R30MT12K G3R30MT12K.pdf
G3R30MT12K
Виробник: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2017.24 грн
30+1256.71 грн
120+1199.86 грн
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G3R40MT12K G3R40MT12K.pdf
G3R40MT12K
Виробник: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 71A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
на замовлення 1389 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1638.21 грн
30+1002.39 грн
120+922.29 грн
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G3R75MT12K G3R75MT12K.pdf
G3R75MT12K
Виробник: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 41A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
на замовлення 920 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1074.78 грн
30+633.86 грн
120+545.89 грн
510+504.21 грн
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GAP3SLT33-214 GAP3SLT33-214.pdf
GAP3SLT33-214
Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+672.32 грн
Мінімальне замовлення: 3000
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GAP3SLT33-214 GAP3SLT33-214.pdf
GAP3SLT33-214
Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIC 3.3KV 300MA DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 300 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3300 V
на замовлення 5217 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+942.46 грн
10+818.52 грн
100+788.07 грн
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GB01SLT06-214 GB01SLT06-214.pdf
GB01SLT06-214
Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+71.68 грн
Мінімальне замовлення: 3000
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GB01SLT06-214 GB01SLT06-214.pdf
GB01SLT06-214
Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 650V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 6.5 V
на замовлення 34810 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.51 грн
10+98.32 грн
100+91.45 грн
500+73.48 грн
Мінімальне замовлення: 3
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GB05MPS33-263 GB05MPS33-263.pdf
GB05MPS33-263
Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 3300V 14A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 288pF @ 1V, 1MHz
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 3000 V
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2602.86 грн
50+1651.73 грн
В кошику  од. на суму  грн.
GBJ10M gbj10j.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 10A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GBPC2510T gbpc2506t.pdf
GBPC2510T
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GBPC2510W gbpc2506t.pdf
GBPC2510W
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+402.94 грн
50+203.33 грн
100+185.51 грн
В кошику  од. на суму  грн.
GBPC3510T gbpc3510t.pdf
GBPC3510T
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GBPC3510W gbpc3506t.pdf
GBPC3510W
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 858 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+441.35 грн
50+224.80 грн
100+205.47 грн
500+161.07 грн
В кошику  од. на суму  грн.
GBPC5010T gbpc5006t.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBPC5010W gbpc5006t.pdf
GBPC5010W
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GBU4A gbu4a.pdf
GBU4A
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.51 грн
10+73.08 грн
100+48.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU4G gbu4a.pdf
GBU4G
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1710 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.51 грн
10+73.08 грн
100+48.79 грн
500+36.03 грн
1000+32.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU4M gbu4j.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GBU6M gbu6j.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GBU8B gbu8a.pdf
GBU8B
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 3066 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.88 грн
10+82.37 грн
100+55.41 грн
500+41.16 грн
1000+37.67 грн
2000+34.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU8D gbu8a.pdf
GBU8D
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4838 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.88 грн
10+82.37 грн
100+55.41 грн
500+41.16 грн
1000+37.67 грн
2000+34.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU8G gbu8a.pdf
GBU8G
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 947 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.88 грн
10+82.37 грн
100+55.41 грн
500+41.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU8J gbu8j.pdf
GBU8J
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 6480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.88 грн
10+82.37 грн
100+55.41 грн
500+41.16 грн
1000+37.67 грн
2000+34.74 грн
5000+31.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU8M gbu8j.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GD02MPS12E GD02MPS12E.pdf
GD02MPS12E
Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 1200V 8A TO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+64.68 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
GD02MPS12E GD02MPS12E.pdf
GD02MPS12E
Виробник: Navitas Semiconductor, Inc.
Description: DIODE SIL CARB 1200V 8A TO2522
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 3417 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+128.05 грн
10+90.84 грн
25+82.63 грн
100+69.06 грн
250+65.02 грн
500+62.58 грн
1000+59.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KBJ2510G kbj2506g.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 25A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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KBL406G kbl406g.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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KBL602G kbl601g.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 100V 6A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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KBL610G kbl606g.pdf
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.45 грн
10+83.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KBP201G kbp201g.pdf
KBP201G
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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KBP202G kbp201g.pdf
KBP202G
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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KBP203G
KBP203G
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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KBP204G kbp201g.pdf
KBP204G
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
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KBP206G description kbp206g.pdf
KBP206G
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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KBP208G kbp206g.pdf
KBP208G
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 441 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.86 грн
10+42.58 грн
100+27.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
KBP210G kbp206g.pdf
KBP210G
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
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KBPC15010T kbpc1506t.pdf
KBPC15010T
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 15A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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KBPC1510T kbpc1506t.pdf
KBPC1510T
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 15A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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KBPC1510W kbpc1506t.pdf
KBPC1510W
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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KBPC25010T kbpc2506t.pdf
KBPC25010T
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
KBPC2510T kbpc2506t.pdf
KBPC2510T
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
KBPC2510W kbpc2506t.pdf
KBPC2510W
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+373.91 грн
50+187.91 грн
100+171.21 грн
500+133.23 грн
1000+125.38 грн
В кошику  од. на суму  грн.
KBPC35010T kbpc3506t.pdf
KBPC35010T
Виробник: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
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