Продукція > NAVITAS SEMICONDUCTOR, INC. > Всі товари виробника NAVITAS SEMICONDUCTOR, INC. (597) > Сторінка 6 з 10
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR20080CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 80V 200A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | |||||||||||||
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MBR2X030A100 | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 100V 60A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MBR30060CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 60V 150A 2TOWER |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | |||||||||||||
| MBR30060CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 60V 150A 2TOWER |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | |||||||||||||
| MBR35100 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 100V 35A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
| MBR35100R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 100V 35A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
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MBR3545 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 45V 35A DO4Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-4 Current - Average Rectified (Io): 35A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||
| MBR3545R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 45V 35A DO4Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-4 Current - Average Rectified (Io): 35A Technology: Schottky, Reverse Polarity Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
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MBR400100CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 100V 200A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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MBR50040CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 40V 250A 2TOWER |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||
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MBR50040CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 40V 250A 2TOWER |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||
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MBR50045CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 45V 250A 2TOWER |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||
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MBR50045CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 45V 250A 2TOWER |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||
| MBR6045R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 45V 60A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |||||||||||||
| MBR6060 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 60V 60A DO5 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |||||||||||||
| MBR6060R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 60V 60A DO5 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |||||||||||||
| MBR80100 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 100V 80A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |||||||||||||
| MBR80100R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 100V 80A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |||||||||||||
| MBRF200150 | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOTTKY 150V TO-244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF200150R | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOTTKY 150V TO-244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF500100 | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOTTKY 100V TO-244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF500100R | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOTTKY 100V TO-244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF50020 | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOT 20V 250A TO244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF50030 | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOT 30V 250A TO244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF50030R | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOT 30V 250A TO244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF50035 | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOT 35V 250A TO244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF50035R | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOT 35V 250A TO244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF50045 | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOT 45V 250A TO244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF50045R | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOT 45V 250A TO244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF50060 | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOT 60V 250A TO244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF50060R | Navitas Semiconductor, Inc. | Description: DIODE MOD SCHOT 60V 250A TO244AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MBRF600200 | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTTKY 200V TO-244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: TO-244AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF600200R | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTTKY 200V TO-244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: TO-244AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRF60020R | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 20V 300A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: TO-244AB Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 300 A Current - Reverse Leakage @ Vr: 10 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBRH12040R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 40V 120A D-67Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 120A Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
на замовлення 44 шт: термін постачання 21-31 дні (днів) |
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MBRT40045 | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 45V 200A 3TOWER |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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MSRTA20060AD | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 600V 200A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | ||||||||||||
| MSRTA20060D | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GEN PURP 600V 200APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200A Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | |||||||||||||
| MUR2505 | Navitas Semiconductor, Inc. |
Description: DIODE STANDARD 50V 25A DO4 |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
| MUR2505R | Navitas Semiconductor, Inc. |
Description: DIODE STANDARD REV 50V 25A DO4 |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
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MUR2510 | Navitas Semiconductor, Inc. |
Description: DIODE STANDARD 100V 25A DO4 |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||
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MUR2X030A10 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 1000V 30A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 78 шт В кошику од. на суму грн. | ||||||||||||
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MUR2X060A02 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 200V 60A SOT-227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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MUR2X060A06 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 600V 60A SOT-227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MUR2X100A02 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 200V 100A SOT227 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MUR2X100A04 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 400V 100A SOT227 |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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MURTA20060 | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | ||||||||||||
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MURTA20060R | Navitas Semiconductor, Inc. |
Description: DIODE MODULE GP 600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | ||||||||||||
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NV6027 | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 120MOHM PQF |
на замовлення 2920 шт: термін постачання 21-31 дні (днів) |
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NV6027 | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 120MOHM PQF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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NV6029 | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 50MOHM PQFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 24mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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NV6029 | Navitas Semiconductor, Inc. |
Description: GANFET DISCRETE 650V 50MOHM PQFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 24mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V |
на замовлення 2749 шт: термін постачання 21-31 дні (днів) |
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NV6113 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 8-PWRVDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 5 A Voltage: 650 V |
на замовлення 979 шт: термін постачання 21-31 дні (днів) |
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NV6113 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 8-PWRVDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 5 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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NV6113-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 8-PWRVDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Current: 5 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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NV6113-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 5A 8-PWRVDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Current: 5 A Voltage: 650 V |
на замовлення 1013 шт: термін постачання 21-31 дні (днів) |
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NV6115 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 8-PWRVDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 170mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 8 A Voltage: 650 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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NV6115 | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 8-PWRVDFNPart Status: Active Supplier Device Package: 8-QFN (5x6) Ratio - Input:Output: 1:1 Current - Output (Max): 8A Voltage: 650 V Current: 8 A Configuration: Half Bridge Type: MOSFET Voltage - Load: 650V Input Type: Non-Inverting Rds On (Typ): 170mOhm Output Configuration: High Side or Low Side Operating Temperature: -40°C ~ 125°C (TC) Switch Type: General Purpose Interface: PWM Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Voltage - Supply (Vcc/Vdd): 10V ~ 24V |
на замовлення 874 шт: термін постачання 21-31 дні (днів) |
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NV6115-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 8-PWRVDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 170mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 8 A Voltage: 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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NV6115-RA | Navitas Semiconductor, Inc. |
Description: MOSFET IPM 650V 8A 8-PWRVDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TC) Output Configuration: High Side or Low Side Rds On (Typ): 170mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 10V ~ 24V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 8-QFN (5x6) Part Status: Active Current: 8 A Voltage: 650 V |
на замовлення 1274 шт: термін постачання 21-31 дні (днів) |
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| MBR20080CTR |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
Мінімальне замовлення: 40 шт
В кошику
од. на суму грн.
| MBR2X030A100 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR30060CT |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
товару немає в наявності
Мінімальне замовлення: 40 шт
В кошику
од. на суму грн.
| MBR30060CTR |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
товару немає в наявності
Мінімальне замовлення: 40 шт
В кошику
од. на суму грн.
| MBR35100 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| MBR35100R |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY REV 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| MBR3545 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Description: DIODE SCHOTTKY 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| MBR3545R |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Description: DIODE SCHOTTKY REV 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| MBR400100CT |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6661.96 грн |
| MBR50040CT |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MBR50040CTR |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MBR50045CT |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MBR50045CTR |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MBR6045R |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MBR6060 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 60V 60A DO5
Description: DIODE SCHOTTKY 60V 60A DO5
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MBR6060R |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 60V 60A DO5
Description: DIODE SCHOTTKY REV 60V 60A DO5
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MBR80100 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MBR80100R |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| MBRF200150 |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 150V TO-244AB
Description: DIODE MOD SCHOTTKY 150V TO-244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF200150R |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 150V TO-244AB
Description: DIODE MOD SCHOTTKY 150V TO-244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF500100 |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 100V TO-244AB
Description: DIODE MOD SCHOTTKY 100V TO-244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF500100R |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 100V TO-244AB
Description: DIODE MOD SCHOTTKY 100V TO-244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF50020 |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 20V 250A TO244AB
Description: DIODE MOD SCHOT 20V 250A TO244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF50030 |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 30V 250A TO244AB
Description: DIODE MOD SCHOT 30V 250A TO244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF50030R |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 30V 250A TO244AB
Description: DIODE MOD SCHOT 30V 250A TO244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF50035 |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 35V 250A TO244AB
Description: DIODE MOD SCHOT 35V 250A TO244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF50035R |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 35V 250A TO244AB
Description: DIODE MOD SCHOT 35V 250A TO244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF50045 |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 45V 250A TO244AB
Description: DIODE MOD SCHOT 45V 250A TO244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF50045R |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 45V 250A TO244AB
Description: DIODE MOD SCHOT 45V 250A TO244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF50060 |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 60V 250A TO244AB
Description: DIODE MOD SCHOT 60V 250A TO244AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRF50060R |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 60V 250A TO244AB
Description: DIODE MOD SCHOT 60V 250A TO244AB
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| MBRF600200 |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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| MBRF600200R |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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| MBRF60020R |
Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 20V 300A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Description: DIODE MOD SCHOT 20V 300A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
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| MBRH12040R |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 40V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE SCHOTTKY REV 40V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4759.99 грн |
| 36+ | 3220.08 грн |
| MBRT40045 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 200A 3TOWER
Description: DIODE MOD SCHOTT 45V 200A 3TOWER
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8528.99 грн |
| 40+ | 6468.55 грн |
| MSRTA20060AD |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 24 шт
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| MSRTA20060D |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GEN PURP 600V 200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE MODULE GEN PURP 600V 200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 24 шт
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| MUR2505 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 50V 25A DO4
Description: DIODE STANDARD 50V 25A DO4
товару немає в наявності
Мінімальне замовлення: 250 шт
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| MUR2505R |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE STANDARD REV 50V 25A DO4
Description: DIODE STANDARD REV 50V 25A DO4
товару немає в наявності
Мінімальне замовлення: 250 шт
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| MUR2510 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 100V 25A DO4
Description: DIODE STANDARD 100V 25A DO4
товару немає в наявності
Мінімальне замовлення: 250 шт
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| MUR2X030A10 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 78 шт
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| MUR2X060A02 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3618.34 грн |
| MUR2X060A06 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 60A SOT-227
Description: DIODE MODULE GP 600V 60A SOT-227
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| MUR2X100A02 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 200V 100A SOT227
Description: DIODE MODULE GP 200V 100A SOT227
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| MUR2X100A04 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 400V 100A SOT227
Description: DIODE MODULE GP 400V 100A SOT227
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3966.27 грн |
| MURTA20060 |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 24 шт
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| MURTA20060R |
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Виробник: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 24 шт
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од. на суму грн.
| NV6027 |
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Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 120MOHM PQF
Description: GANFET DISCRETE 650V 120MOHM PQF
на замовлення 2920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 420.94 грн |
| 10+ | 311.19 грн |
| 25+ | 287.60 грн |
| 100+ | 245.56 грн |
| 250+ | 236.79 грн |
| NV6027 |
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Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 120MOHM PQF
Description: GANFET DISCRETE 650V 120MOHM PQF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| NV6029 |
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Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| NV6029 |
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Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
на замовлення 2749 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 914.87 грн |
| 10+ | 693.35 грн |
| 25+ | 646.43 грн |
| 100+ | 558.32 грн |
| 250+ | 556.26 грн |
| NV6113 |
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Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.90 грн |
| 10+ | 155.48 грн |
| 25+ | 142.42 грн |
| 100+ | 120.22 грн |
| 250+ | 113.81 грн |
| 500+ | 112.00 грн |
| NV6113 |
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Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| NV6113-RA |
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Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NV6113-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
на замовлення 1013 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.90 грн |
| 10+ | 155.48 грн |
| 25+ | 142.42 грн |
| 100+ | 120.22 грн |
| 250+ | 113.81 грн |
| 500+ | 109.95 грн |
| NV6115 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NV6115 |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Part Status: Active
Supplier Device Package: 8-QFN (5x6)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 170mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Part Status: Active
Supplier Device Package: 8-QFN (5x6)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 170mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
на замовлення 874 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.92 грн |
| 10+ | 205.07 грн |
| 25+ | 188.46 грн |
| 100+ | 159.82 грн |
| 250+ | 151.69 грн |
| 500+ | 150.97 грн |
| NV6115-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 167.73 грн |
| NV6115-RA |
![]() |
Виробник: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
на замовлення 1274 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.14 грн |
| 10+ | 204.54 грн |
| 25+ | 188.04 грн |
| 100+ | 159.44 грн |
| 250+ | 151.32 грн |













