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BZX384-B7V5,115 BZX384-B7V5,115 NEXPERIA BZX384_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
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BZX384-B7V5-QX NEXPERIA BZX384-Q_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
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74HCT4017BQ,115 NEXPERIA 74HCT4017BQ,115.pdf Category: Counters/dividers
Description: IC: digital; 5-stage,decade counter; CMOS,TTL; SMD; DHVQFN16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 5-stage; decade counter
Mounting: SMD
Case: DHVQFN16
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Kind of package: reel; tape
Operating temperature: -40...125°C
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PMEG150G20ELRX PMEG150G20ELRX NEXPERIA PMEG150G20ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 14ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.78V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
7+64.32 грн
Мінімальне замовлення: 7
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PMEG200G10ELRX PMEG200G10ELRX NEXPERIA PMEG200G10ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 34ns; SOD123W; Ufmax: 0.805V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 34ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.805V
Max. forward impulse current: 40A
Leakage current: 30nA
Kind of package: reel; tape
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
4+113.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PMEG150G10ELRX PMEG150G10ELRX NEXPERIA PMEG150G10ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.78V
Max. forward impulse current: 50A
Leakage current: 30nA
Kind of package: reel; tape
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PMEG120G20ELRX PMEG120G20ELRX NEXPERIA PMEG120G20ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 2A; 11ns; SOD123W; Ufmax: 0.77V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.77V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
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PMEG200G20ELRX PMEG200G20ELRX NEXPERIA PMEG200G20ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 32ns; SOD123W; Ufmax: 0.805V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.805V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
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PMEG120G10ELRX PMEG120G10ELRX NEXPERIA PMEG120G10ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 1A
Reverse recovery time: 12ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.77V
Max. forward impulse current: 50A
Leakage current: 30nA
Kind of package: reel; tape
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PMEG200G30ELPX PMEG200G30ELPX NEXPERIA PMEG200G30ELP.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 31ns; SOD128; Ufmax: 0.81V; Ir: 30nA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD128
Max. forward voltage: 0.81V
Max. forward impulse current: 85A
Leakage current: 30nA
Kind of package: reel; tape
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NXS0108BQX NEXPERIA NXS0108.pdf Category: Level translators
Description: IC: digital; 8bit,bidirectional,transceiver,translator; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 1.65...3.6V DC; 2.3...5.5V DC
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
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PMEG3020EH,115 PMEG3020EH,115 NEXPERIA PMEG3020EH.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 72pF
Max. forward voltage: 0.62V
Max. load current: 4.5A
Max. forward impulse current: 9A
Kind of package: reel; tape
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BAS416Z BAS416Z NEXPERIA BAS416.115.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 3us; SOD323; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Reverse recovery time: 3µs
Load current: 0.2A
Max. load current: 0.5A
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Max. off-state voltage: 85V
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BAS416F BAS416F NEXPERIA BAS416.115.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 3us; SOD323; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Reverse recovery time: 3µs
Load current: 0.2A
Max. load current: 0.5A
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Max. off-state voltage: 85V
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1N4730A,113 1N4730A,113 NEXPERIA 1N4728A_SER.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1.2V
Kind of package: reel; tape
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1N4730A,133 NEXPERIA 1N4728A_SER.pdf PHGLS20363-1.pdf?t.download=true&u=5oefqw Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; Ammo Pack; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1.2V
Kind of package: Ammo Pack
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BZV90-C27,115 BZV90-C27,115 NEXPERIA BZV90-DTE.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 27V; SMD; reel,tape; SOT223; Ifmax: 400mA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOT223
Max. load current: 0.4A
Semiconductor structure: single diode
на замовлення 374 шт:
термін постачання 14-30 дні (днів)
6+82.44 грн
13+34.99 грн
100+31.46 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BZV55-B5V1,135 NEXPERIA BZV55_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 5.1V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
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74HC30PW,118 74HC30PW,118 NEXPERIA 74HC30PW,118.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Delay time: 195ns
Quiescent current: 40µA
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
13+36.24 грн
19+23.05 грн
25+20.36 грн
100+17.58 грн
250+16.15 грн
500+15.23 грн
1000+14.47 грн
2500+14.05 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
74HC30D,653 74HC30D,653 NEXPERIA 74HC30D,653.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Quiescent current: 40µA
на замовлення 1626 шт:
термін постачання 14-30 дні (днів)
21+21.74 грн
29+14.89 грн
33+12.95 грн
50+11.69 грн
100+10.85 грн
250+9.93 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
74HC174PW,118 NEXPERIA 74HC174PW,118.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; SMD; TSSOP16; HC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
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BCV27,215 BCV27,215 NEXPERIA BCV27.215.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 220MHz
на замовлення 2338 шт:
термін постачання 14-30 дні (днів)
32+14.49 грн
43+10.01 грн
60+7.10 грн
100+5.63 грн
250+5.18 грн
500+4.96 грн
1000+4.44 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
BCV27-QR NEXPERIA BCV27-Q.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 220MHz
Application: automotive industry
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BAT754A,215 BAT754A,215 NEXPERIA BAT754_SER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
25+18.12 грн
34+12.45 грн
39+11.02 грн
50+9.84 грн
100+8.83 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BZX84-C9V1.215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 9.1V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.2A
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BC857AMB,315 NEXPERIA BC857XMB_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; DFN1006B-3,SOT883B
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: DFN1006B-3; SOT883B
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
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BC857AW,115 BC857AW,115 NEXPERIA BC856W_BC857W_BC858W.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
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PMD3001D,115 PMD3001D,115 NEXPERIA PMD3001D.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Mounting: SMD
Case: SC74; SOT457; TSOP6
Type of transistor: NPN / PNP
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Polarisation: bipolar
Semiconductor structure: common base; common emitter
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74HCT32DB,112 74HCT32DB,112 NEXPERIA 74HC_HCT32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP14
Operating temperature: -40...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
на замовлення 387 шт:
термін постачання 14-30 дні (днів)
28+16.31 грн
30+14.13 грн
33+13.12 грн
78+12.53 грн
156+11.27 грн
Мінімальне замовлення: 28
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74AHCT32PW,118 74AHCT32PW,118 NEXPERIA 74AHCT32PW,118.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 10ns
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
на замовлення 2808 шт:
термін постачання 14-30 дні (днів)
20+23.55 грн
23+18.51 грн
29+14.97 грн
34+12.70 грн
100+11.69 грн
Мінімальне замовлення: 20
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74AHCT32D,118 74AHCT32D,118 NEXPERIA 74AHCT32D,118.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 10ns
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
на замовлення 1446 шт:
термін постачання 14-30 дні (днів)
30+15.40 грн
36+11.78 грн
41+10.26 грн
47+9.08 грн
Мінімальне замовлення: 30
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74HCT32BQ,115 NEXPERIA 74HCT32BQ,115.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 36ns
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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74HCT32PW,118 74HCT32PW,118 NEXPERIA 74HCT32PW,118.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 36ns
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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74AHCT32BQ,115 NEXPERIA 74AHCT32BQ,115.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 10ns
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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74VHCT32D,118 NEXPERIA 74VHC_VHCT32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; TTL; SMD; SO14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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74VHCT32PW-Q100J NEXPERIA 74VHC_VHCT32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; TTL; SMD; TSSOP14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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1PS79SB30,115 1PS79SB30,115 NEXPERIA 1PS79SB30-DTE.pdf 1PS79SB30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Kind of package: reel; tape
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1PS79SB30,135 1PS79SB30,135 NEXPERIA 1PS79SB30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Kind of package: reel; tape
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PMZB600UNELYL NEXPERIA PMZB600UNEL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMBZ6V8AL,215 MMBZ6V8AL,215 NEXPERIA MMBZxAL_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Peak pulse power dissipation: 40W
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double; unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 10nA
Number of channels: 2
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
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74HCT390DB,112 74HCT390DB,112 NEXPERIA 74HC_HCT390.pdf Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 2; CMOS,TTL; SMD; SSOP16; HCT; tube
Type of integrated circuit: digital
Case: SSOP16
Kind of package: tube
Mounting: SMD
Number of channels: 2
Kind of integrated circuit: decade counter
Family: HCT
Technology: CMOS; TTL
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
20+23.55 грн
22+19.35 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
74HCT390D,653 74HCT390D,653 NEXPERIA 74HCT390D,653.pdf Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 2; CMOS,TTL; SMD; SO16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decade counter
Mounting: SMD
Case: SO16
Family: HCT
Technology: CMOS; TTL
Kind of package: reel; tape
Number of channels: 2
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PMZ350UPEYL PMZ350UPEYL NEXPERIA PMZ350UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -700mA
Pulsed drain current: -2.8A
Case: DFN1006-3; SOT883
On-state resistance: 645mΩ
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
на замовлення 1150 шт:
термін постачання 14-30 дні (днів)
23+19.93 грн
32+13.29 грн
40+10.68 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
PMZ130UNEYL NEXPERIA PMZ130UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 8A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ200UNEYL NEXPERIA PMZ200UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ290UNE2YL NEXPERIA PMZ290UNE2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 475mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ320UPEYL NEXPERIA PMZ320UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -600mA
Pulsed drain current: -4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 810mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ390UN,315 NEXPERIA PMZ390UN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ950UPELYL NEXPERIA PMZ950UPEL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.3A
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ950UPEYL NEXPERIA PMZ950UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.3A
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ1200UPEYL NEXPERIA PMZ1200UPE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.26A
Pulsed drain current: -1.7A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ370UNEYL NEXPERIA PMZ370UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 560mA; Idm: 3.6A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Pulsed drain current: 3.6A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 860mΩ
Mounting: SMD
Gate charge: 1.16nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ550UNEYL NEXPERIA PMZ550UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 370mA; Idm: 2.3A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ600UNELYL NEXPERIA PMZ600UNEL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ600UNEYL NEXPERIA PMZ600UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ600UNEZ NEXPERIA PMZ600UNE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PTVS48VS1UR,115 PTVS48VS1UR,115 NEXPERIA PTVSXS1UR_SER.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 5.2A; unidirectional; SOD123W; max.150°C
Operating temperature: max. 150°C
Type of diode: TVS
Leakage current: 1nA
Max. forward impulse current: 5.2A
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
на замовлення 883 шт:
термін постачання 14-30 дні (днів)
20+23.55 грн
23+18.76 грн
26+16.49 грн
100+14.64 грн
250+12.28 грн
500+11.10 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
PESD3V3L1BA,115 PESD3V3L1BA,115 NEXPERIA PESD3V3L1BA.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Peak pulse power dissipation: 0.5kW
Capacitance: 101pF
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PESD3V3U1UL,315 PESD3V3U1UL,315 NEXPERIA PESD3V3U1UA_UB_UL.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4.5÷6.8V; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5...6.8V
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
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PESD3V3U1UT,215 PESD3V3U1UT,215 NEXPERIA PESDXU1UT_SER.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 80W; 6.4V; bidirectional; SOT23
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Peak pulse power dissipation: 80W
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BZX384-B7V5,115 BZX384_SER.pdf
BZX384-B7V5,115
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
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BZX384-B7V5-QX BZX384-Q_SER.pdf
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
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74HCT4017BQ,115 74HCT4017BQ,115.pdf
Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 5-stage,decade counter; CMOS,TTL; SMD; DHVQFN16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 5-stage; decade counter
Mounting: SMD
Case: DHVQFN16
Family: HCT
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Kind of package: reel; tape
Operating temperature: -40...125°C
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PMEG150G20ELRX PMEG150G20ELR.pdf
PMEG150G20ELRX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 14ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.78V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+64.32 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PMEG200G10ELRX PMEG200G10ELR.pdf
PMEG200G10ELRX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 34ns; SOD123W; Ufmax: 0.805V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 34ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.805V
Max. forward impulse current: 40A
Leakage current: 30nA
Kind of package: reel; tape
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+113.24 грн
Мінімальне замовлення: 4
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PMEG150G10ELRX PMEG150G10ELR.pdf
PMEG150G10ELRX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.78V
Max. forward impulse current: 50A
Leakage current: 30nA
Kind of package: reel; tape
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PMEG120G20ELRX PMEG120G20ELR.pdf
PMEG120G20ELRX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 2A; 11ns; SOD123W; Ufmax: 0.77V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 2A
Reverse recovery time: 11ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.77V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
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PMEG200G20ELRX PMEG200G20ELR.pdf
PMEG200G20ELRX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 32ns; SOD123W; Ufmax: 0.805V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.805V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
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PMEG120G10ELRX PMEG120G10ELR.pdf
PMEG120G10ELRX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 1A
Reverse recovery time: 12ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.77V
Max. forward impulse current: 50A
Leakage current: 30nA
Kind of package: reel; tape
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PMEG200G30ELPX PMEG200G30ELP.pdf
PMEG200G30ELPX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 31ns; SOD128; Ufmax: 0.81V; Ir: 30nA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD128
Max. forward voltage: 0.81V
Max. forward impulse current: 85A
Leakage current: 30nA
Kind of package: reel; tape
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NXS0108BQX NXS0108.pdf
Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 8bit,bidirectional,transceiver,translator; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 1.65...3.6V DC; 2.3...5.5V DC
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: open drain
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PMEG3020EH,115 PMEG3020EH.pdf
PMEG3020EH,115
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 72pF
Max. forward voltage: 0.62V
Max. load current: 4.5A
Max. forward impulse current: 9A
Kind of package: reel; tape
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BAS416Z BAS416.115.pdf
BAS416Z
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 3us; SOD323; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Reverse recovery time: 3µs
Load current: 0.2A
Max. load current: 0.5A
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Max. off-state voltage: 85V
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BAS416F BAS416.115.pdf
BAS416F
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 3us; SOD323; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Type of diode: switching
Reverse recovery time: 3µs
Load current: 0.2A
Max. load current: 0.5A
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Max. off-state voltage: 85V
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1N4730A,113 1N4728A_SER.pdf
1N4730A,113
Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; reel,tape; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1.2V
Kind of package: reel; tape
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1N4730A,133 1N4728A_SER.pdf PHGLS20363-1.pdf?t.download=true&u=5oefqw
Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 3.9V; Ammo Pack; DO41; single diode; 500mA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.9V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1.2V
Kind of package: Ammo Pack
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BZV90-C27,115 BZV90-DTE.pdf
BZV90-C27,115
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 27V; SMD; reel,tape; SOT223; Ifmax: 400mA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOT223
Max. load current: 0.4A
Semiconductor structure: single diode
на замовлення 374 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+82.44 грн
13+34.99 грн
100+31.46 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BZV55-B5V1,135 BZV55_SER.pdf
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 5.1V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
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74HC30PW,118 74HC30PW,118.pdf
74HC30PW,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Delay time: 195ns
Quiescent current: 40µA
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+36.24 грн
19+23.05 грн
25+20.36 грн
100+17.58 грн
250+16.15 грн
500+15.23 грн
1000+14.47 грн
2500+14.05 грн
Мінімальне замовлення: 13
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74HC30D,653 74HC30D,653.pdf
74HC30D,653
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HC
Quiescent current: 40µA
на замовлення 1626 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.74 грн
29+14.89 грн
33+12.95 грн
50+11.69 грн
100+10.85 грн
250+9.93 грн
Мінімальне замовлення: 21
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74HC174PW,118 74HC174PW,118.pdf
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; CMOS; SMD; TSSOP16; HC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
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BCV27,215 BCV27.215.pdf
BCV27,215
Виробник: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 220MHz
на замовлення 2338 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.49 грн
43+10.01 грн
60+7.10 грн
100+5.63 грн
250+5.18 грн
500+4.96 грн
1000+4.44 грн
Мінімальне замовлення: 32
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BCV27-QR BCV27-Q.pdf
Виробник: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 220MHz
Application: automotive industry
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BAT754A,215 BAT754_SER.pdf
BAT754A,215
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+18.12 грн
34+12.45 грн
39+11.02 грн
50+9.84 грн
100+8.83 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BZX84-C9V1.215 BZX84_SER.pdf
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 9.1V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.2A
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BC857AMB,315 BC857XMB_SER.pdf
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; DFN1006B-3,SOT883B
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: DFN1006B-3; SOT883B
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
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BC857AW,115 BC856W_BC857W_BC858W.pdf
BC857AW,115
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
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PMD3001D,115 PMD3001D.pdf
PMD3001D,115
Виробник: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 40V; 1A; SC74,SOT457,TSOP6
Mounting: SMD
Case: SC74; SOT457; TSOP6
Type of transistor: NPN / PNP
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 40V
Polarisation: bipolar
Semiconductor structure: common base; common emitter
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74HCT32DB,112 74HC_HCT32.pdf
74HCT32DB,112
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP14
Operating temperature: -40...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
на замовлення 387 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.31 грн
30+14.13 грн
33+13.12 грн
78+12.53 грн
156+11.27 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
74AHCT32PW,118 74AHCT32PW,118.pdf
74AHCT32PW,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 10ns
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
на замовлення 2808 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.55 грн
23+18.51 грн
29+14.97 грн
34+12.70 грн
100+11.69 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
74AHCT32D,118 74AHCT32D,118.pdf
74AHCT32D,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 10ns
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
на замовлення 1446 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30+15.40 грн
36+11.78 грн
41+10.26 грн
47+9.08 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
74HCT32BQ,115 74HCT32BQ,115.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 36ns
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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74HCT32PW,118 74HCT32PW,118.pdf
74HCT32PW,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 36ns
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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74AHCT32BQ,115 74AHCT32BQ,115.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 10ns
Family: AHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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74VHCT32D,118 74VHC_VHCT32.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; TTL; SMD; SO14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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74VHCT32PW-Q100J 74VHC_VHCT32.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; TTL; SMD; TSSOP14; 4.5÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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1PS79SB30,115 1PS79SB30-DTE.pdf 1PS79SB30.pdf
1PS79SB30,115
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Kind of package: reel; tape
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1PS79SB30,135 1PS79SB30.pdf
1PS79SB30,135
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 1A
Kind of package: reel; tape
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PMZB600UNELYL PMZB600UNEL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMBZ6V8AL,215 MMBZxAL_SER.pdf
MMBZ6V8AL,215
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Peak pulse power dissipation: 40W
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double; unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 10nA
Number of channels: 2
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
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74HCT390DB,112 74HC_HCT390.pdf
74HCT390DB,112
Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 2; CMOS,TTL; SMD; SSOP16; HCT; tube
Type of integrated circuit: digital
Case: SSOP16
Kind of package: tube
Mounting: SMD
Number of channels: 2
Kind of integrated circuit: decade counter
Family: HCT
Technology: CMOS; TTL
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.55 грн
22+19.35 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
74HCT390D,653 74HCT390D,653.pdf
74HCT390D,653
Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 2; CMOS,TTL; SMD; SO16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decade counter
Mounting: SMD
Case: SO16
Family: HCT
Technology: CMOS; TTL
Kind of package: reel; tape
Number of channels: 2
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PMZ350UPEYL PMZ350UPE.pdf
PMZ350UPEYL
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -700mA
Pulsed drain current: -2.8A
Case: DFN1006-3; SOT883
On-state resistance: 645mΩ
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
на замовлення 1150 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+19.93 грн
32+13.29 грн
40+10.68 грн
Мінімальне замовлення: 23
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PMZ130UNEYL PMZ130UNE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 8A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ200UNEYL PMZ200UNE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ290UNE2YL PMZ290UNE2.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 475mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ320UPEYL PMZ320UPE.pdf
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -600mA
Pulsed drain current: -4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 810mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ390UN,315 PMZ390UN.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ950UPELYL PMZ950UPEL.pdf
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.3A
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ950UPEYL PMZ950UPE.pdf
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.3A
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ1200UPEYL PMZ1200UPE.pdf
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.26A
Pulsed drain current: -1.7A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ370UNEYL PMZ370UNE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 560mA; Idm: 3.6A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Pulsed drain current: 3.6A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 860mΩ
Mounting: SMD
Gate charge: 1.16nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ550UNEYL PMZ550UNE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 370mA; Idm: 2.3A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ600UNELYL PMZ600UNEL.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ600UNEYL PMZ600UNE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PMZ600UNEZ PMZ600UNE.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: Trench
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PTVS48VS1UR,115 PTVSXS1UR_SER.pdf
PTVS48VS1UR,115
Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 5.2A; unidirectional; SOD123W; max.150°C
Operating temperature: max. 150°C
Type of diode: TVS
Leakage current: 1nA
Max. forward impulse current: 5.2A
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
на замовлення 883 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.55 грн
23+18.76 грн
26+16.49 грн
100+14.64 грн
250+12.28 грн
500+11.10 грн
Мінімальне замовлення: 20
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PESD3V3L1BA,115 PESD3V3L1BA.pdf
PESD3V3L1BA,115
Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Peak pulse power dissipation: 0.5kW
Capacitance: 101pF
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PESD3V3U1UL,315 PESD3V3U1UA_UB_UL.pdf
PESD3V3U1UL,315
Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 4.5÷6.8V; unidirectional; DFN1006-2,SOD882
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 4.5...6.8V
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
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PESD3V3U1UT,215 PESDXU1UT_SER.pdf
PESD3V3U1UT,215
Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 80W; 6.4V; bidirectional; SOT23
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 6.4V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 2µA
Peak pulse power dissipation: 80W
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