Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PBHV8540T-QR | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 400V; 0.5A; 300mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23; TO236AB Current gain: 100...200 Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 30MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PBHV8540T,215 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 400V; 0.5A; 300mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23; TO236AB Current gain: 100...200 Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BZA856A,115 | NEXPERIA |
![]() Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 5.6V Semiconductor structure: common anode; quadruple Case: SC88A; SOT353 Max. forward impulse current: 3.75A Kind of package: reel; tape Version: ESD Peak pulse power dissipation: 24W Leakage current: 2µA |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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1N4731A,113 | NEXPERIA |
![]() Description: Diode: Zener; 1W; 4.3V; 217mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 4.3V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Max. forward voltage: 1.2V Zener current: 217mA Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
1N4731A,133 | NEXPERIA |
![]() ![]() Description: Diode: Zener; 1W; 4.3V; 217mA; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 4.3V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Max. forward voltage: 1.2V Zener current: 217mA Kind of package: Ammo Pack Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BAS70H-QX | NEXPERIA |
![]() Description: Diode: Schottky switching; SOD123F; SMD; 70V; 0.1A; reel,tape Type of diode: Schottky switching Case: SOD123F Mounting: SMD Max. off-state voltage: 70V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BCM62B,215 | NEXPERIA |
![]() Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 390mW; SOT143B; common base Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.39W Case: SOT143B Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 175MHz Semiconductor structure: common base |
на замовлення 1613 шт: термін постачання 21-30 дні (днів) |
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PMEG4002EJ,115 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 40V; 0.2A Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 2.6A Kind of package: reel; tape |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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PMEG4002EL-QYL | NEXPERIA |
![]() Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 40V; 0.2A Type of diode: Schottky rectifying Case: DFN1006-2; SOD882 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 3A Kind of package: reel; tape Leakage current: 10µA Application: automotive industry Capacitance: 20pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMEG4002EL,315 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 40V; 0.2A Type of diode: Schottky rectifying Case: DFN1006-2; SOD882 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 3A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PMEG4002ELD,315 | NEXPERIA |
![]() Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 40V; 0.2A Type of diode: Schottky rectifying Case: DFN1006D-2; SOD882D Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Capacitance: 20pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TDZ5V6J,115 | NEXPERIA |
![]() Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD323F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Max. load current: 0.25A Max. forward voltage: 1.1V Leakage current: 10µA |
на замовлення 2069 шт: термін постачання 21-30 дні (днів) |
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NZX5V6D,133 | NEXPERIA |
![]() Description: Diode: Zener; 500mW; 5.6V; Ammo Pack; SOD27; single diode; 250mA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: Ammo Pack Case: SOD27 Mounting: THT Semiconductor structure: single diode Max. load current: 0.25A Max. forward voltage: 1.5V |
на замовлення 8034 шт: термін постачання 21-30 дні (днів) |
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NZH5V6B,115 | NEXPERIA |
![]() Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2.5% Semiconductor structure: single diode Max. load current: 0.25A Max. forward voltage: 0.9V Leakage current: 5µA |
на замовлення 1264 шт: термін постачання 21-30 дні (днів) |
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74AHC244PW-Q100,11 | NEXPERIA |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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74HC40103PW,118 | NEXPERIA |
![]() Description: IC: digital; 8bit,binary counter,synchronous; CMOS; SMD; TTSOP16 Type of integrated circuit: digital Kind of integrated circuit: 8bit; binary counter; synchronous Mounting: SMD Case: TTSOP16 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -40...125°C Technology: CMOS |
на замовлення 2045 шт: термін постачання 21-30 дні (днів) |
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74HC4002D,653 | NEXPERIA |
![]() Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA Type of integrated circuit: digital Operating temperature: -40...125°C Case: SO14 Number of inputs: 2 Supply voltage: 2...6V DC Number of channels: dual; 2 Quiescent current: 40µA Delay time: 150ns Kind of package: reel; tape Kind of gate: NOR Technology: CMOS Family: HC Mounting: SMD |
на замовлення 1930 шт: термін постачання 21-30 дні (днів) |
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74HC4002DB,112 | NEXPERIA |
![]() Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SSOP14; 2÷6VDC; tube; HC Type of integrated circuit: digital Case: SSOP14 Number of inputs: 2 Supply voltage: 2...6V DC Number of channels: dual; 2 Kind of package: tube Kind of gate: NOR Technology: CMOS Family: HC Mounting: SMD |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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74HC4002PW,112 | NEXPERIA |
![]() Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; tube; HC Type of integrated circuit: digital Case: TSSOP14 Number of inputs: 2 Supply voltage: 2...6V DC Number of channels: dual; 2 Kind of package: tube Kind of gate: NOR Technology: CMOS Family: HC Mounting: SMD |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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74HC4002PW,118 | NEXPERIA |
![]() Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C Type of integrated circuit: digital Operating temperature: -40...125°C Case: TSSOP14 Number of inputs: 2 Supply voltage: 2...6V DC Number of channels: dual; 2 Quiescent current: 40µA Delay time: 150ns Kind of package: reel; tape Kind of gate: NOR Technology: CMOS Family: HC Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSR43,115 | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89 Frequency: 100MHz Mounting: SMD Collector-emitter voltage: 80V Current gain: 30...300 Collector current: 1A Type of transistor: NPN Power dissipation: 1.35W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 |
на замовлення 786 шт: термін постачання 21-30 дні (днів) |
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BSR43-QX | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89 Mounting: SMD Collector-emitter voltage: 80V Current gain: 30...300 Collector current: 1A Type of transistor: NPN Application: automotive industry Power dissipation: 1.35W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PTVS20VS1UR,115 | NEXPERIA |
![]() Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 23.35V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
на замовлення 2505 шт: термін постачання 21-30 дні (днів) |
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74AUP1G74GS,115 | NEXPERIA |
![]() Description: IC: digital; D flip-flop; CMOS; Mini Logic; SMD; XSON8; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Technology: CMOS Mounting: SMD Case: XSON8 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AUP Manufacturer series: Mini Logic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74AUP1G74GXX | NEXPERIA |
![]() Description: IC: digital; D flip-flop; Ch: 1; X2SON8; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Case: X2SON8 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BZX84-C39-QR | NEXPERIA |
![]() Description: Diode: Zener; 0.25W; 39V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PTVS24VS1UR,115 | NEXPERIA |
![]() Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 1nA Operating temperature: max. 150°C |
на замовлення 586 шт: термін постачання 21-30 дні (днів) |
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BUK7M12-40EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 192A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 34A Pulsed drain current: 192A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 23.6mΩ Mounting: SMD Gate charge: 15.8nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M15-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27.4A Pulsed drain current: 155A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 29.1mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M20-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 125A Power dissipation: 38W Case: LFPAK33; SOT1210 On-state resistance: 38.8mΩ Mounting: SMD Gate charge: 10.2nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M21-40EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10.7nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M27-80EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 21.3A Pulsed drain current: 121A Power dissipation: 62W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 19.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M3R3-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 475A Power dissipation: 101W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M45-40EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 13A; Idm: 77A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 13A Pulsed drain current: 77A Power dissipation: 31W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 89mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M4R3-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 69A Pulsed drain current: 392A Power dissipation: 90W Case: LFPAK33; SOT1210 On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M6R0-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 311A Power dissipation: 70W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M6R7-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 282A Power dissipation: 65W Case: LFPAK33; SOT1210 On-state resistance: 13mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M8R5-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M9R5-40HX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 38.5A Pulsed drain current: 218A Power dissipation: 55W Case: LFPAK33; SOT1210 On-state resistance: 18.4mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M9R9-60EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 240A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 30.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BUK7M15-60EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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BUK7M17-80EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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BUK7M67-60EX | NEXPERIA |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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BC847B | NEXPERIA |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: 11 inch reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BAS16VV,115 | NEXPERIA |
![]() Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT666; Ufmax: 1.25V; 0.18W Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Features of semiconductor devices: fast switching Case: SOT666 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Power dissipation: 0.18W Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BZX384-B7V5-QX | NEXPERIA |
![]() Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.25A Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BAS516-QF | NEXPERIA |
![]() Description: Diode: switching Type of diode: switching |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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BAT54GWJ | NEXPERIA |
![]() Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
PBHV8540T-QR |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 300mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 100...200
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 30MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 300mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 100...200
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 30MHz
Application: automotive industry
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PBHV8540T,215 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 300mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 100...200
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 30MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 300mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 100...200
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 30MHz
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BZA856A,115 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Case: SC88A; SOT353
Max. forward impulse current: 3.75A
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 24W
Leakage current: 2µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Case: SC88A; SOT353
Max. forward impulse current: 3.75A
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 24W
Leakage current: 2µA
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.48 грн |
27+ | 14.61 грн |
35+ | 11.29 грн |
100+ | 8.27 грн |
131+ | 6.96 грн |
359+ | 6.57 грн |
500+ | 6.26 грн |
1N4731A,113 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 4.3V; 217mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.3V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.2V
Zener current: 217mA
Kind of package: reel; tape
Max. load current: 0.5A
Category: THT Zener diodes
Description: Diode: Zener; 1W; 4.3V; 217mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.3V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.2V
Zener current: 217mA
Kind of package: reel; tape
Max. load current: 0.5A
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1N4731A,133 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 4.3V; 217mA; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.3V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.2V
Zener current: 217mA
Kind of package: Ammo Pack
Max. load current: 0.5A
Category: THT Zener diodes
Description: Diode: Zener; 1W; 4.3V; 217mA; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.3V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.2V
Zener current: 217mA
Kind of package: Ammo Pack
Max. load current: 0.5A
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BAS70H-QX |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123F; SMD; 70V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123F; SMD; 70V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
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BCM62B,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 390mW; SOT143B; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.39W
Case: SOT143B
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175MHz
Semiconductor structure: common base
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 390mW; SOT143B; common base
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.39W
Case: SOT143B
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 175MHz
Semiconductor structure: common base
на замовлення 1613 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.82 грн |
19+ | 21.03 грн |
25+ | 17.55 грн |
50+ | 14.38 грн |
93+ | 9.82 грн |
253+ | 9.28 грн |
PMEG4002EJ,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 40V; 0.2A
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 40V; 0.2A
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2.6A
Kind of package: reel; tape
на замовлення 330 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.99 грн |
32+ | 12.45 грн |
100+ | 8.10 грн |
204+ | 4.42 грн |
PMEG4002EL-QYL |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 40V; 0.2A
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 3A
Kind of package: reel; tape
Leakage current: 10µA
Application: automotive industry
Capacitance: 20pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 40V; 0.2A
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 3A
Kind of package: reel; tape
Leakage current: 10µA
Application: automotive industry
Capacitance: 20pF
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PMEG4002EL,315 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 40V; 0.2A
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 3A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006-2,SOD882; SMD; 40V; 0.2A
Type of diode: Schottky rectifying
Case: DFN1006-2; SOD882
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 3A
Kind of package: reel; tape
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PMEG4002ELD,315 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 40V; 0.2A
Type of diode: Schottky rectifying
Case: DFN1006D-2; SOD882D
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 20pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 40V; 0.2A
Type of diode: Schottky rectifying
Case: DFN1006D-2; SOD882D
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 20pF
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TDZ5V6J,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 1.1V
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 1.1V
Leakage current: 10µA
на замовлення 2069 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.66 грн |
58+ | 6.73 грн |
66+ | 5.88 грн |
100+ | 4.24 грн |
369+ | 2.45 грн |
1015+ | 2.32 грн |
NZX5V6D,133 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 5.6V; Ammo Pack; SOD27; single diode; 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: Ammo Pack
Case: SOD27
Mounting: THT
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 1.5V
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 5.6V; Ammo Pack; SOD27; single diode; 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: Ammo Pack
Case: SOD27
Mounting: THT
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 1.5V
на замовлення 8034 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.33 грн |
59+ | 6.56 грн |
100+ | 5.68 грн |
200+ | 4.73 грн |
500+ | 3.56 грн |
730+ | 1.24 грн |
2010+ | 1.17 грн |
NZH5V6B,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2.5%
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
Leakage current: 5µA
на замовлення 1264 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.83 грн |
54+ | 7.19 грн |
94+ | 4.13 грн |
100+ | 4.04 грн |
310+ | 2.92 грн |
850+ | 2.77 грн |
1000+ | 2.69 грн |
74AHC244PW-Q100,11 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 14.74 грн |
74HC40103PW,118 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 8bit,binary counter,synchronous; CMOS; SMD; TTSOP16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary counter; synchronous
Mounting: SMD
Case: TTSOP16
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; 8bit,binary counter,synchronous; CMOS; SMD; TTSOP16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; binary counter; synchronous
Mounting: SMD
Case: TTSOP16
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Technology: CMOS
на замовлення 2045 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.30 грн |
12+ | 34.26 грн |
31+ | 29.69 грн |
84+ | 28.07 грн |
250+ | 26.99 грн |
74HC4002D,653 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: dual; 2
Quiescent current: 40µA
Delay time: 150ns
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS
Family: HC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: dual; 2
Quiescent current: 40µA
Delay time: 150ns
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS
Family: HC
Mounting: SMD
на замовлення 1930 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.96 грн |
9+ | 46.16 грн |
10+ | 41.60 грн |
25+ | 36.65 грн |
48+ | 18.87 грн |
132+ | 17.86 грн |
74HC4002DB,112 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Case: SSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: dual; 2
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; SSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Case: SSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: dual; 2
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HC
Mounting: SMD
на замовлення 37 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.64 грн |
14+ | 29.23 грн |
25+ | 25.21 грн |
37+ | 24.74 грн |
74HC4002PW,112 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: dual; 2
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; tube; HC
Type of integrated circuit: digital
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: dual; 2
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HC
Mounting: SMD
на замовлення 2 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
74HC4002PW,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: dual; 2
Quiescent current: 40µA
Delay time: 150ns
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS
Family: HC
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷125°C
Type of integrated circuit: digital
Operating temperature: -40...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Number of channels: dual; 2
Quiescent current: 40µA
Delay time: 150ns
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS
Family: HC
Mounting: SMD
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BSR43,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Frequency: 100MHz
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 30...300
Collector current: 1A
Type of transistor: NPN
Power dissipation: 1.35W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Frequency: 100MHz
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 30...300
Collector current: 1A
Type of transistor: NPN
Power dissipation: 1.35W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
на замовлення 786 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.64 грн |
18+ | 22.19 грн |
50+ | 16.24 грн |
98+ | 9.28 грн |
268+ | 8.82 грн |
BSR43-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 30...300
Collector current: 1A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 1.35W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC62,SOT89
Mounting: SMD
Collector-emitter voltage: 80V
Current gain: 30...300
Collector current: 1A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 1.35W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
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PTVS20VS1UR,115 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 23.35V; 12.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 23.35V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
на замовлення 2505 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.82 грн |
22+ | 18.02 грн |
40+ | 14.61 грн |
80+ | 13.15 грн |
100+ | 12.60 грн |
116+ | 7.86 грн |
317+ | 7.43 грн |
74AUP1G74GS,115 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; CMOS; Mini Logic; SMD; XSON8; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Technology: CMOS
Mounting: SMD
Case: XSON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Manufacturer series: Mini Logic
Category: Flip-Flops
Description: IC: digital; D flip-flop; CMOS; Mini Logic; SMD; XSON8; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Technology: CMOS
Mounting: SMD
Case: XSON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AUP
Manufacturer series: Mini Logic
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74AUP1G74GXX |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; X2SON8; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Case: X2SON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; X2SON8; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Case: X2SON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
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BZX84-C39-QR |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 39V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 39V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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PTVS24VS1UR,115 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 28.1V; 10.3A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 1nA
Operating temperature: max. 150°C
на замовлення 586 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.65 грн |
50+ | 16.32 грн |
100+ | 13.76 грн |
111+ | 8.20 грн |
304+ | 7.81 грн |
BUK7M12-40EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 192A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Pulsed drain current: 192A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 23.6mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 192A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Pulsed drain current: 192A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 23.6mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M15-40HX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 29.1mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 29.1mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M20-40HX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M21-40EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23.1A; Idm: 131A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 10.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M27-80EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21.3A
Pulsed drain current: 121A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 21.3A
Pulsed drain current: 121A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M3R3-40HX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M45-40EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; Idm: 77A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13A
Pulsed drain current: 77A
Power dissipation: 31W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 89mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; Idm: 77A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 13A
Pulsed drain current: 77A
Power dissipation: 31W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 89mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M4R3-40HX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M6R0-40HX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M6R7-40HX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 282A
Power dissipation: 65W
Case: LFPAK33; SOT1210
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M8R5-40HX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M9R5-40HX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 38.5A
Pulsed drain current: 218A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 18.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 38.5A
Pulsed drain current: 218A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 18.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M9R9-60EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 30.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK7M15-60EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1500+ | 25.48 грн |
BUK7M17-80EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1500+ | 32.23 грн |
BUK7M67-60EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1500+ | 15.49 грн |
BC847B |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 100MHz
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BAS16VV,115 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT666; Ufmax: 1.25V; 0.18W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: fast switching
Case: SOT666
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.18W
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOT666; Ufmax: 1.25V; 0.18W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: fast switching
Case: SOT666
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.18W
Leakage current: 50µA
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BZX384-B7V5-QX |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Application: automotive industry
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BAS516-QF |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.67 грн |
BAT54GWJ |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
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